Inventor
Shinya Nunoue
Inventor
Chiba, JP
Overview
Patents· 257 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers32%
H01LSemiconductor devices18%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
H10DInorganic electric semiconductor devices7%
B82YSpecific uses or applications of nanostructures6%
C09KMaterials for miscellaneous applications, not provided for elsewhere2%
F21KNon-electric light sources using luminescence1%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation1%
PatentTitleYear
11,024,717Semiconductor device and method of manufacturing semiconductor device202110,923,349Semiconductor element and method for manufacturing the same202110,651,307Semiconductor device and method for manufacturing the same202010,573,735Semiconductor device202010,505,030Semiconductor device and method for manufacturing the same201910,475,915Semiconductor device and method for manufacturing the same201910,395,932Semiconductor device and method for manufacturing the same201910,355,119Method for manufacturing semiconductor device201910,283,633Semiconductor device and method for manufacturing the same201910,186,588Semiconductor substrate and semiconductor device201910,103,231Semiconductor device201810,008,571Semiconductor wafer, semiconductor device, and method for manufacturing nitride semiconductor layer20189,972,657Semiconductor light emitting element20189,865,770'Semiconductor light emitting element and method for manufacturing the same'20189,679,974'Nitride semiconductor element, nitride semiconductor wafer, and method for forming nitride semiconductor layer'20179,673,284'Nitride semiconductor device, nitride semiconductor wafer, and method for forming nitride semiconductor layer'20179,601,662'Semiconductor light emitting device, nitride semiconductor layer, and method for forming nitride semiconductor layer'20179,590,141'Semiconductor light emitting device having a p-type semiconductor layer with a p-type impurity'20179,590,009'Semiconductor light emitting element'20179,530,767'Semiconductor light emitting element'20169,515,146'Nitride semiconductor layer, nitride semiconductor device, and method for manufacturing nitride semiconductor layer'20169,508,804'Nitride semiconductor element and nitride semiconductor wafer'20169,478,706'Semiconductor light emitting device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer'20169,419,175'Semiconductor light emitting device'20169,412,910'Semiconductor light emitting device and method for manufacturing same'20169,397,167'Nitride semiconductor wafer, nitride semiconductor device, and method for manufacturing nitride semiconductor wafer'20169,391,145'Nitride semiconductor element and nitride semiconductor wafer'20169,368,682'Semiconductor light emitting device'20169,349,590'Method for manufacturing nitride semiconductor layer'20169,349,925'Light emitting device with oxynitride phosphors'20169,337,385'Semiconductor light emitting element and method for manufacturing the same'20169,337,396'Semiconductor light emitting device'20169,337,400'Semiconductor light emitting element and method for manufacturing the same'20169,331,235'Semiconductor device and method for manufacturing the same'20169,331,237'Semiconductor light emitting device, including a plurality of barrier layers and a plurality of well layers, and method for manufacturing the same'20169,331,234'Semiconductor light emitting device and method for manufacturing semiconductor light emitting device'20169,324,916'Semiconductor light emitting device'20169,324,917'Semiconductor light emitting device'20169,312,429'Semiconductor light emitting device, semiconductor wafer with first and second portions with different lattice polarities'20169,312,436'Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer'20169,305,773'Semiconductor device, nitride semiconductor wafer, and method for forming nitride semiconductor layer'20169,299,901'Semiconductor light emitting device'20169,299,889'Semiconductor light emitting device'20169,293,657'Semiconductor light emitting device'20169,287,441'Method for manufacturing semiconductor device'20169,287,369'Nitride semiconductor element and nitride semiconductor wafer'20169,263,631'Semiconductor light emitting device and method for manufacturing same'20169,263,632'Semiconductor light emitting device'20169,246,055'Crystal growth method and semiconductor light emitting device'20169,231,160'Semiconductor light emitting element'20169,214,595'Semiconductor light emitting device'20159,209,362'Semiconductor light emitting device and method of fabricating semiconductor light emitting device'20159,202,986'Semiconductor light emitting device and method for manufacturing the same'20159,202,873'Semiconductor wafer for semiconductor device having a multilayer'20159,202,994'Semiconductor light emitting element and method for manufacturing the same'20159,196,784'Semiconductor device and method for manufacturing semiconductor device'20159,196,786'Semiconductor light emitting element and method for manufacturing the same'20159,190,559'Semiconductor light emitting device, nitride semiconductor layer, and method for forming nitride semiconductor layer'20159,178,111'Semiconductor light emitting device'20159,172,017'Semiconductor device and method for manufacturing the same'20159,159,878'Semiconductor light emitting device'20159,147,801'Semiconductor light emitting device'20159,142,717'Semiconductor light emitting device and wafer'20159,136,425'Semiconductor light emitting element and light emitting device'20159,136,253'Semiconductor light emitting device'20159,130,069'Method for manufacturing nitride semiconductor layer and method for manufacturing semiconductor light emitting device'20159,130,098'Semiconductor light emitting device'20159,130,134'Semiconductor light emitting device and method for manufacturing same'20159,123,831'Semiconductor device, nitride semiconductor wafer, and method for forming nitride semiconductor layer'20159,112,111'Semiconductor light emitting device and method for manufacturing semiconductor light emitting device'20159,105,810'Semiconductor light emitting device'20159,093,588'Semiconductor light emitting device with an aluminum containing layer formed thereon'20159,093,609'Semiconductor light emitting device having a p-type semiconductor layer with a p-type impurity'20159,082,931'Semiconductor light emitting device'20159,076,929'Semiconductor light emitting element'20159,072,146'Light-emitting electric-power generation module and light-emitting electric-power generation device'20159,070,841'Semiconductor light emitting device and method for manufacturing same'20159,065,003'Semiconductor light emitting device and semiconductor wafer'20159,064,997'Semiconductor light emitting device, nitride semiconductor layer growth substrate, and nitride semiconductor wafer'20159,065,004'Semiconductor light emitting element'20159,059,375'Semiconductor light emitting device and method for manufacturing the same'20159,054,229'Semiconductor light emitting device'20159,053,931'Nitride semiconductor wafer, nitride semiconductor device, and method for manufacturing nitride semiconductor wafer'20159,054,036'Nitride semiconductor device, nitride semiconductor wafer, and method for forming nitride semiconductor layer'20159,048,362'Semiconductor light emitting device'20159,040,322'Method for manufacturing semiconductor light emitting element'20159,035,336'Semiconductor device'20159,024,293'Semiconductor light emitting device'20159,018,654'Semiconductor light emitting device and light emitting apparatus'20159,018,665'Semiconductor light emitting device and method for manufacturing the same'20159,012,886'Semiconductor light emitting device'20159,006,709'Semiconductor light emitting element and method for manufacturing the same'20159,006,706'Semiconductor light emitting device'20159,006,013'Method for manufacturing semiconductor light emitting device and semiconductor light emitting device wafer'20158,994,054'Nitride LED with a schottky electrode penetrating a transparent electrode'20158,987,026'Semiconductor light emitting device'20158,981,398'Semiconductor light emitting device and method for manufacturing the same'20158,969,891'Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layer'20158,963,176'Semiconductor light-emitting device and method for manufacturing same'20158,952,401'Semiconductor light emitting device, wafer, and method for manufacturing nitride semiconductor crystal layer'20158,952,353'Semiconductor light emitting device'20158,937,328'Light emitting device and manufacturing method thereof'20158,928,000'Nitride semiconductor wafer including different lattice constants'20158,921,870'Light emitting device'20148,921,878'Light emitting device'20148,901,595'Semiconductor light emitting device'20148,896,076'Photoelectric conversion element, photoelectric conversion system, and method for production of photoelectric conversion element'20148,895,956'Semiconductor light emitting device'20148,890,194'Semiconductor light emitting device'20148,890,195'Semiconductor light emitting device and method for manufacturing the same'20148,884,307'Nitride semiconductor wafer including different lattice constants'20148,878,213'Semiconductor light emitting device'20148,877,526'Semiconductor light emitting device and method for manufacturing the same'20148,872,158'Semiconductor light emitting device'20148,859,307'Semiconductor device and method for manufacturing same'20148,858,835'Red light-emitting flourescent substance and light-emitting device employing the same'20148,847,271'Semiconductor light emitting device'20148,835,983'Nitride semiconductor device including a doped nitride semiconductor between upper and lower nitride semiconductor layers'20148,835,904'Semiconductor light emitting device and method for manufacturing same'20148,835,950'Semiconductor device'20148,835,901'Semiconductor light emitting device'20148,829,544'Semiconductor light emitting device, nitride semiconductor layer, and method for forming nitride semiconductor layer'20148,822,250'Semiconductor light emitting device and method for manufacturing the same'20148,823,016'Semiconductor light emitting device, nitride semiconductor layer growth substrate, and nitride semiconductor wafer'20148,816,367'Semiconductor light emitting device and method for manufacturing same'20148,815,717'Vapor deposition method and vapor deposition apparatus'20148,809,833'Semiconductor light emitting device and method for manufacturing the same'20148,809,085'Method for manufacturing nitride semiconductor device'20148,809,101'Semiconductor light emitting device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer'20148,790,999'Method for manufacturing nitride semiconductor crystal layer'20148,785,943'Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer'20148,779,437'Wafer, crystal growth method, and semiconductor device'20148,772,800'Semiconductor light-emitting device'20148,766,305'Semiconductor light emitting device and method of fabricating semiconductor light emitting device'20148,766,297'Semiconductor light emitting device and method for manufacturing same'20148,766,311'Semiconductor light emitting device and light emitting apparatus'20148,759,851'Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layer'20148,754,528'Semiconductor device'20148,741,686'Semiconductor device'20148,735,925'Semiconductor light emitting device and method for manufacturing the same'20148,728,237'Crystal growth method for nitride semiconductor having a multiquantum well structure'20148,729,575'Semiconductor light emitting device and manufacturing method of the same'20148,729,578'Semiconductor light emitting device and method for manufacturing the same'20148,704,268'Semiconductor light emitting device'20148,698,123'Semiconductor light emitting device'20148,698,192'Semiconductor light emitting device having a p-type semiconductor layer with a p-type impurity'20148,692,287'Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer'20148,680,537'Nitride semiconductor element and nitride semiconductor wafer'20148,680,548'Semiconductor light emitting device and method of fabricating semiconductor light emitting device'20148,680,508'Semiconductor light emitting device and method for manufacturing same'20148,680,566'Semiconductor light emitting device including oxide layers with different oxygen contents'20148,674,338'Semiconductor light emitting device'20148,658,450'Crystal growth method and semiconductor light emitting device'20148,652,359'Red light-emitting fluorescent substance and light-emitting device employing the same'20148,653,498'Semiconductor light emitting device'20148,649,408'Semiconductor laser device'20148,648,377'Semiconductor light-emitting device'20148,648,381'Semiconductor light emitting device'20148,647,905'Semiconductor light emitting device and method for manufacturing same'20148,643,044'Semiconductor light emitting device'20148,637,890'Light emitting device'20148,623,676'Semiconductor light emitting device with light transmittable electrode and method for manufacturing same'20148,623,683'Method of fabricating a nitride semiconductor light emitting device'20148,610,158'Semiconductor light emitting device'20138,610,106'Semiconductor light emitting device'20138,604,496'Optical semiconductor device'20138,598,605'Semiconductor light-emitting device'20138,592,850'Light emitting device'20138,569,943'Luminescent material'20138,564,006'Nitride semiconductor device and nitride semiconductor layer growth substrate'20138,558,251'Light emitting device'20138,546,824'Light emitting device'20138,525,195'Semiconductor light emitting device'20138,526,477'Semiconductor light emitting device'20138,525,197'Semiconductor light emitting device and method for manufacturing same'20138,525,194'Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layer'20138,525,203'Semiconductor light emitting device'20138,520,167'Liquid crystal display device'20138,476,151'Method for manufacturing nitride semiconductor crystal layer'20138,470,625'Method of fabricating semiconductor light emitting device and semiconductor light emitting device'20138,471,277'Light emitting device'20138,466,477'Semiconductor device'20138,461,611'Semiconductor light emitting device and method for manufacturing the same'20138,461,606'Semiconductor light-emitting device and method for manufacturing same'20138,461,615'Semiconductor light emitting device'20138,457,167'Semiconductor laser device and method of manufacturing the same'20138,456,010'Semiconductor device'20138,455,911'Semiconductor light-emitting device'20138,455,917'Nitride semiconductor light emitting device'20138,450,918'Light-emitting apparatus, display apparatus, and light emitter'20138,452,144'Light emitter and light emitting device'20138,441,023'Semiconductor light emitting device'20138,436,395'Semiconductor light emitting device'20138,436,527'Light emitting device'20138,432,947'Semiconductor light emitting device'20138,421,108'Semiconductor light emitting device and method for manufacturing the same'20138,414,145'Light emitting device'20138,414,795'Red light-emitting fluorescent substance and light-emitting device employing the same'20138,399,896'Semiconductor light emitting device and method of manufacturing the same'20138,395,263'Semiconductor light emitting device and method for manufacturing the same'20138,395,169'Light emitting device'20138,390,007'Semiconductor light emitting device and method of fabricating semiconductor light emitting device'20138,390,012'Semiconductor light emitting device and method of fabricating semiconductor light emitting device'20138,384,109'Semiconductor light-emitting device'20138,368,104'Light emitting device'20138,369,375'Semiconductor light-emitting device'20138,354,681'Semiconductor light-emitting element and manufacturing method thereof'20138,348,468'Light emitting device'20138,334,153'Semiconductor light emitting device and method of fabricating semiconductor light emitting device'20128,314,437'Semiconductor light emitting device and method for manufacturing the same'20128,310,145'Light emitting device including first and second red phosphors and a green phosphor'20128,294,165'Semiconductor light-emitting device'20128,278,821'Light emitting device'20128,242,532'Semiconductor light-emitting device'20128,237,350'Light-emitting device'20128,232,118'Light emitting device and method for manufacturing the same'20128,207,659'Light emitting device and light emitting apparatus'20128,188,510'Semiconductor light-emitting device'20128,178,891'Semiconductor light emitting device and method for manufacturing the same'20128,148,890'Light-emitting device and method for manufacturing the same'20128,130,803'Light emitting device'20128,124,995'Semiconductor light-emitting device'20128,093,608'Semiconductor light-emitting device'20128,093,083'Method for manufacturing a semiconductor light emitting device'20128,071,995'Light emitting device and a method for manufacturing the same'20118,004,004'Semiconductor light emitting element, method for manufacturing the same, and light emitting device'20117,993,948'Semiconductor device, method for fabricating an electrode, and method for manufacturing a semiconductor device'20117,985,981'Semiconductor light-emitting device'20117,935,978'Light emitting device and method for manufacturing the same'20117,915,630'Semiconductor light-emitting device'20117,884,538'Light-emitting device'20117,863,637'Semiconductor light emitting element, method for manufacturing the same, and light emitting device'20117,795,059'Method of fabricating a semiconductor light-emitting device'20107,773,648'Semiconductor device and method for manufacturing the same'20107,763,907'Semiconductor light emitting element'20107,683,390'Semiconductor device'20107,592,641'Semiconductor device, method for fabricating an electrode, and method for manufacturing a semiconductor device'20097,531,397'Method for manufacturing a semiconductor device on GAN substrate having surface bidirectionally inclined toward <1-100> and <11-20> directions relative to {0001} crystal planes'20097,525,127'Semiconductor light emitting device'20097,397,069'Semiconductor device'20087,385,228'Semiconductor light-emitting element and light-emitting device'20087,339,255'Semiconductor device having bidirectionally inclined toward <1-100> and <11-20> relative to {0001} crystal planes'20086,400,742'Semiconductor laser and method of fabricating same'20026,359,919'Gallium nitride-based compound semiconductor laser and method of manufacturing the same'20026,316,785'Nitride-compound semiconductor device'20016,303,405'Semiconductor light emitting element, and its manufacturing method'20016,252,894'Semiconductor laser using gallium nitride series compound semiconductor'20016,242,761'Nitride compound semiconductor light emitting device'20016,185,238'Nitride compound semiconductor laser and its manufacturing method'20016,118,801'Gallium nitride-based compound semiconductor laser and method of manufacturing the same'20006,064,079'Gallium nitride-based compound semiconductor device'20006,031,858'Semiconductor laser and method of fabricating same'20006,015,979'Nitride-based semiconductor element and method for manufacturing the same'20005,987,048'Gallium nitride-based compound semiconductor laser and method of manufacturing the same'19995,966,396'Gallium nitride-based compound semiconductor laser and method of manufacturing the same'19995,905,275'Gallium nitride compound semiconductor light-emitting device'19995,304,514'Dry etching method'1994Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1994–2021Patents assigned to TOSHIBA KK (251)· patent assignee history
1994–2021Based in Ichikawa, JP· patent location history
2001–2018Based in Chiba, JP· patent location history
2011–2016Patents assigned to NUNOUE SHINYA (117)· patent assignee history
2012–2016Patents assigned to HIKOSAKA TOSHIKI (31)· patent assignee history
2012–2015Patents assigned to TACHIBANA KOICHI (30)· patent assignee history
2012–2016Patents assigned to OKA TOSHIYUKI (27)· patent assignee history
2013Based in Chia-ken, JP· patent location history
2013Based in Tokyo, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOSHIBA KK | 251 | 1994–2021 |
| NUNOUE SHINYAself | 117 | 2011–2016 |
| HIKOSAKA TOSHIKI | 31 | 2012–2016 |
| TACHIBANA KOICHI | 30 | 2012–2015 |
| OKA TOSHIYUKI | 27 | 2012–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Chiba, JP | 158 | 2001–2018 |
| Ichikawa, JP | 97 | 1994–2021 |
| Chia-ken, JP | 1 | 2013 |
| Tokyo, JP | 1 | 2013 |