A semiconductor light emitting device has a support substrate, a light emitting element, and underfill material. The light emitting element includes a nitride-based group III-V compound semiconductor layer contacted via a bump on the support substrate. The underfill material is disposed between the support substrate and the light emitting element, the underfill material comprising a rib portion disposed outside of an end face of the light emitting element to surround the end surface of the light emitting element.

Claims

16 · 2 independent · depth 3

16 granted claims

›1.independentA semiconductor light emitting device, comprising:na support substrate;a light emitting element including a nitride-based group III-V compound semicon…+8

›2.↳ 1The device of claim 1, further comprising a first resin including a fluorescent material, the first resin being disposed on the underfill material and…d2+1

›4.↳ 1The device of claim 1, wherein the underfill material is an epoxy-based resin with a hardness of D60 to D85 and a viscosity of 0.8 to 14 Pa·s.d2

›5.↳ 1The device of claim 1, wherein the rib portion has a tapered shape in which a sectional area of the rib portion becomes smaller continuously away from…d2

›6.↳ 1The device of claim 1, wherein an inside wall of the rib portion is disposed opposite in parallel to a sidewall of the light emitting element.d2

›7.↳ 1The device of claim 1, wherein the underfill material is closely disposed to the support substrate, the bump and the light emitting element.d2

›8.↳ 1The device of claim 1, wherein the light emitting element comprises a p type electrode and an n type electrode each provided on one or another of oppo…d2

›9.↳ 1The device of claim 1, wherein a light extraction surface roughly processed is provided on a surface opposite to the support substrate in the light em…d2

›10.independentA semiconductor light emitting device, comprising:na support substrate;a light emitting element including a nitride-based group III-V compound semicon…+6

›11.↳ 10The device of claim 10, wherein the underfill material is an epoxy-based resin with a hardness of D60 to D85 and a viscosity of 0.8 to 14 Pa·s.d2

›12.↳ 10The device of claim 10, wherein the rib portion has a tapered shape in which a sectional area of the rib portion becomes smaller continuously away fro…d2

›13.↳ 10The device of claim 10, wherein an inside wall of the rib portion is disposed opposite in parallel to a sidewall of the light emitting element.d2

›14.↳ 10The device of claim 10, wherein the underfill material is closely disposed to the support substrate, the bump and the light emitting element.d2

›15.↳ 10The device of claim 10, wherein the light emitting element comprises a p type electrode and an n type electrode each provided on one or another of opp…d2

›16.↳ 10The device of claim 10, wherein a light extraction surface roughly processed is provided on a surface opposite to the support substrate in the light e…d2

Classifications

5 codes

IPC · International Patent Classification

Section H — Electricity

H01L33/00

USPC · US Patent Classification

257/98257/E33.058257/E33.023257/103

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Tan N Tran

art unit 2826 · TC 2800

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1 priority documents

›Priority documents — 1

Type	Document	Date
related publication	US 20110220934 A1	15 Sep 2011

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