A semiconductor light emitting device comprising:na first electrode;a second electrode;a first semiconductor layer of a first conductivity type;a second semiconductor layer of a second conductivity type;a light emitting layer; anda first dielectric layer,the first semiconductor layer includingna first region,a second region arranged with the first region in a first direction,a third region provided between the first region and the second region,a fourth region provided between the first region and the third region,the second electrode includingna first electrode portion provided apart from the first region in a second direction crossing the first direction, anda second electrode portion provided apart from the second region in the second direction and apart from the first electrode portion in the first direction,the second semiconductor layer includingna first semiconductor part provided between the first region and the first electrode portion, anda second semiconductor part provided between the second region and the second electrode portion, andthe light emitting layer includingna first light emitting part provided between the first region and the first semiconductor part, anda second light emitting part provided between the second region and the second semiconductor part,a position of the first electrode in the first direction being located between a position of the first electrode portion in the first direction and a position of the second electrode portion in the first direction, the first electrode including a first portion and a second portion,nthe first portion being in contact with the third region,the second portion provided apart from the fourth region in the second direction, the second portion being connected with the first portion,the first dielectric layer including a first dielectric part provided between the second portion and the fourth region in the second direction, the first dielectric layer having a refractive index lower than a refractive index of the first semiconductor layer.
›2.↳ 1The device according to claim 1, whereinnthe first portion has a first length in a third direction perpendicular to the first direction and perpendicu…d2+1
The device according to claim 1, whereinnthe first portion has a first length in a third direction perpendicular to the first direction and perpendicular to the second direction,the first portion having a second length in the first direction,the first portion extends in the third direction, andthe first length is longer than the second length.
›3.↳ 2The device according to claim 2, whereinnthe first electrode portion includes a contact portion in contact with the first semiconductor part,the conta…d3
The device according to claim 2, whereinnthe first electrode portion includes a contact portion in contact with the first semiconductor part,the contact portion has a third length in the first direction, andthe second length is shorter than the third length.
›4.↳ 1The device according to claim 1, whereinnthe first electrode portion includes a contact portion in contact with the first semiconductor part, andan ar…d2
The device according to claim 1, whereinnthe first electrode portion includes a contact portion in contact with the first semiconductor part, andan area of the contact portion is larger than an area of the first electrode.
›5.↳ 1The device according to claim 1, further comprisingna support substrate, the first electrode portion being located between the support substrate and t…d2+1
The device according to claim 1, further comprisingna support substrate, the first electrode portion being located between the support substrate and the first semiconductor part, the support substrate being electrically connected to the first electrode portion and the second electrode portion; anda pad,the first electrode including an extension portion, a part of the extension portion not overlapping the first semiconductor layer in the second direction, andthe pad being provided on an opposite side of the extension portion from the support substrate, the pad being in contact with the extension portion.
›6.↳ 5The device according to claim 5, whereinnthe first portion extends in a third direction perpendicular to the first direction and perpendicular to the …d3
The device according to claim 5, whereinnthe first portion extends in a third direction perpendicular to the first direction and perpendicular to the second direction, the first portion is connected with the pad and has a first length in the third direction,the first portion having a second length in the first direction, anda length of the pad in the first direction is longer than a length of the first portion in the first direction.
›7.↳ 1The device according to claim 1, further comprising a second dielectric layer, the first electrode being provided between the first semiconductor laye…d2
The device according to claim 1, further comprising a second dielectric layer, the first electrode being provided between the first semiconductor layer and at least a portion of the second dielectric layer.
›8.↳ 1The device according to claim 1, wherein the first electrode includesna first conductive layer including the first portion; anda second conductive lay…d2+1
The device according to claim 1, wherein the first electrode includesna first conductive layer including the first portion; anda second conductive layer including the second portion, the second conductive layer being in contact with the first conductive layer, andthe second conductive layer containing a different material from the first conductive layer.
›9.↳ 8The device according to claim 8, wherein the first dielectric layer is in contact with a peripheral portion of the first conductive layer.d3
The device according to claim 8, wherein the first dielectric layer is in contact with a peripheral portion of the first conductive layer.
›10.↳ 1The device according to claim 1, wherein the first electrode includesna first conductive layer including the first portion and the second portion; and…d2
The device according to claim 1, wherein the first electrode includesna first conductive layer including the first portion and the second portion; anda second conductive layer in contact with the first conductive layer, the second conductive layer containing a material different from a material of the first conductive layer.
›11.↳ 1The device according to claim 1, whereinnthe first semiconductor layer has a first surface and a second surface, the second surface is opposite to the…d2
The device according to claim 1, whereinnthe first semiconductor layer has a first surface and a second surface, the second surface is opposite to the first surface and faces the first light emitting part and facing the second light emitting part,the first semiconductor layer has concavities-convexities provided at the first surface, andthe concavities-convexities is provided with a pitch not less than a peak wavelength of emitted light emitted from the light emitting layer.
›12.↳ 1The device according to claim 1, whereinnthe first conductivity type is an n type, andthe second conductivity type is a p type.d2
The device according to claim 1, whereinnthe first conductivity type is an n type, andthe second conductivity type is a p type.
›13.↳ 1The device according to claim 1, whereinnthe second electrode has a portion in contact with the second semiconductor layer, anda material of at least …d2
The device according to claim 1, whereinnthe second electrode has a portion in contact with the second semiconductor layer, anda material of at least the portion of the second electrode contains Ag.
›14.↳ 1The device according to claim 1, whereinnthe first electrode has a portion in contact with the first semiconductor layer, anda material of at least th…d2
The device according to claim 1, whereinnthe first electrode has a portion in contact with the first semiconductor layer, anda material of at least the portion of the first electrode contains one selected from a group consisting of Ti, Au, Al, and Ag, or an alloy containing at least one of Ti, Au, Al, and Ag, or ITO.
›15.↳ 1The device according to claim 1, wherein the first dielectric layer contains SiO2, SiN, or SiON.d2
The device according to claim 1, wherein the first dielectric layer contains SiO2, SiN, or SiON.
›16.↳ 1The device according to claim 1, wherein the first semiconductor layer includes GaN.d2
The device according to claim 1, wherein the first semiconductor layer includes GaN.
›17.↳ 1The device according to claim 1, whereinnthe first semiconductor layer further includes a fifth region provided between the second region and the thir…d2
The device according to claim 1, whereinnthe first semiconductor layer further includes a fifth region provided between the second region and the third region,the first electrode further includes a third portion provided apart from the fifth region in the second direction, the third portion being connected with the first portion,the first dielectric layer further includes a second dielectric part provided between the third portion and the fifth region.
