Semiconductor light emitting device and method for manufacturing the same

A semiconductor light emitting device comprising:na first semiconductor layer including an n-type semiconductor layer;a second semiconductor layer including a p-type semiconductor layer; anda light emitting part provided between the first semiconductor layer and the second semiconductor layer, and including a plurality of barrier layers and a well layer provided between the barrier layers,the first semiconductor layer having:na first major surface on an opposite side to the light emitting part,a first irregularity provided on the first major surface and having a bottom face and a top face, anda second irregularity provided on the bottom face and the top face and having a bottom portion and a top portion,the first irregularity having a first level difference between the bottom face and the top face along a first direction from the first semiconductor layer toward the second semiconductor layer; andthe second irregularity having a second level difference between the bottom portion and the top portion along the first direction, the second level difference being smaller than the first level difference.

A semiconductor light emitting device comprising:na first semiconductor layer including an n-type semiconductor layer;a second semiconductor layer including a p-type semiconductor layer; anda light emitting part provided between the first semiconductor layer and the second semiconductor layer, and including a plurality of barrier layers and a well layer provided between the barrier layers,the first semiconductor layer having a first major surface on an opposite side to the light emitting part, and an irregularity provided on the first major surface,the irregularity having a step-like side face including a plurality of terrace faces perpendicular to a first direction from the first semiconductor layer toward the second semiconductor layer, andthe irregularity having a plurality of top portions and a bottom portion provided between the top portions when the first major surface is cut in a plane parallel to the first direction,widths of the top portions along a second direction connecting the two top portions nearest to each other of the top portions and a width of the bottom portion along the second direction being four times or less widths of the terrace faces along the second direction.

A semiconductor light emitting device comprising:na first semiconductor layer including an n-type semiconductor layer;a second semiconductor layer including a p-type semiconductor layer; anda light emitting part provided between the first semiconductor layer and the second semiconductor layer, and including a plurality of barrier layers and a well layer provided between the barrier layers,the first semiconductor layer having a first major surface on an opposite side to the light emitting part, and an irregularity provided on the first major surface,the irregularity having a step-like side face including a plurality of terrace faces perpendicular to a first direction from the first semiconductor layer toward the second semiconductor layer, andthe irregularity having a plurality of bottom portions and a top portion provided between the bottom portions when the first major surface is cut in a plane parallel to the first direction,widths of the bottom portions along a second direction connecting the two bottom portions nearest to each other of the bottom portions and a width of the top portion along the second direction being four times or less than widths of the terrace faces along the second direction.