Inventor
Hideki Uochi
Inventor
Kanagawa, JP
Overview
Patents· 166 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices34%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein15%
H01LSemiconductor devices12%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
G09GArrangements or circuits for control of indicating devices using static means to present variable information6%
H10KOrganic electric solid-state devices4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
H10BElectronic memory devices3%
G11CStatic stores2%
PatentTitleYear
11,126,053Liquid crystal display device202111,106,099Display device and electronic device202111,094,360Storage device, electronic component, and electronic device202111,048,135Liquid crystal display device202111,024,763Semiconductor device and method for manufacturing the same202110,770,596Semiconductor device and method for manufacturing the same202010,756,080Semiconductor device including protection circuit202010,726,913Semiconductor device and method for driving the same202010,559,599Display device202010,559,598Display device202010,539,847Liquid crystal display device202010,488,887Electronic device201910,452,218Display device and electronic device201910,446,693Semiconductor device and method for manufacturing the same201910,367,006Display Device201910,324,347Liquid crystal display device201910,290,742Semiconductor device including oxide semiconductor layer201910,254,607Display device201910,236,303Semiconductor device having oxide semiconductor layer201910,236,387Semiconductor device and electronic device201910,229,904Display device including oxide semiconductor layer201910,203,571Liquid crystal display device201910,187,596Semiconductor device, method for driving semiconductor device, and method for driving electronic device201910,181,545Semiconductor device and method for manufacturing the same201910,074,646Display device201810,054,830Liquid crystal display device201810,043,915Semiconductor device and method for manufacturing the same201810,032,796Display device20189,915,843'Display device with pixel including capacitor'20189,904,127'Liquid crystal display device'20189,886,150'Display device and electronic device'20189,865,742'Semiconductor device'20189,835,912Liquid crystal display device20179,823,526'Liquid crystal display device'20179,806,138'Display device'20179,703,157'Display device'20179,674,470'Semiconductor device, method for driving semiconductor device, and method for driving electronic device'20179,647,125'Semiconductor device and method for manufacturing the same'20179,633,722'Semiconductor device and method for driving the same'20179,601,635'Semiconductor device and method for manufacturing the same'20179,583,576'Semiconductor device and method for driving the same'20179,570,470'Display device'20179,478,597'Semiconductor device'20169,417,492'Liquid crystal display device'20169,356,049'Display device with a transistor on an outer side of a bent portion'20169,343,517'Display device'20169,316,881'Liquid crystal display device'20169,257,594'Thin film transistor with an oxide semiconductor layer'20169,235,090'Liquid crystal display device'20169,196,633'Display device'20159,184,189'Semiconductor device, display device, and electronic appliance'20159,176,355'Liquid crystal display device'20159,177,855'Semiconductor device and method for manufacturing the same'20159,128,336'Liquid crystal display device'20159,130,067'Display device'20159,099,437'Semiconductor device'20159,082,688'Display device'20159,048,320'Display device including oxide semiconductor layer'20159,030,638'Liquid crystal display device'20159,024,309'Display device'2015D0724580'Portable information terminal'20158,957,468'Variable capacitor and liquid crystal display device'20158,953,125'Liquid crystal display device'20158,941,114'Display device including protective circuit'2015D0718764'Portable information terminal'20148,816,349'Semiconductor device comprising oxide semiconductor layer'20148,772,773'Display device including protective circuit'20148,759,829'Semiconductor device comprising oxide semiconductor layer as channel formation layer'20148,687,157'Liquid crystal display device'20148,674,371'Display device'20148,675,158'Liquid crystal display device'20148,643,018'Semiconductor device comprising a pixel portion and a driver circuit'20148,634,230'Semiconductor device and method for driving the same'20148,630,127'Semiconductor device and method for driving the same'20148,619,227'Liquid crystal display device'20138,514,609'Semiconductor device and method of driving semiconductor device'20138,508,700'Liquid crystal display device'20138,501,555'Semiconductor device and manufacturing method thereof'20138,432,730'Semiconductor device and method for driving the same'20138,427,595'Display device with pixel portion and common connection portion having oxide semiconductor layers'20138,390,044'Non-linear element, display device including non-linear element, and electronic device including display device'20138,389,988'Display device'20138,368,066'Display device'20138,344,374'Semiconductor device comprising oxide semiconductor layer'20138,334,540'Display device'20128,304,765'Display device'20128,293,594'Method for manufacturing a display device having oxide semiconductor layer'20128,278,660'Semiconductor device and method for manufacturing the same'20128,273,613'Semiconductor device and method of manufacture thereof'20128,253,144'Semiconductor device and method for manufacturing the same'20128,253,135'Semiconductor device, display device, and electronic appliance'20128,198,683'Semiconductor device including transistors with silicided impurity regions'20128,164,729'Liquid crystal display device'20128,062,935'Semiconductor device and method for manufacturing the same'20117,999,892'Liquid crystal display device'20117,989,815'Display device'20117,889,295'Liquid crystal display device'20117,880,836'Liquid crystal display device'20117,880,848'Liquid crystal display device'20117,847,355'Semiconductor device including transistors with silicided impurity regions'20107,773,182'Liquid crystal display device'20107,642,584'Semiconductor device and method for forming the same'20107,635,895'Display device'20097,622,335'Method for manufacturing a thin film transistor device'20097,569,856'Semiconductor device and method for manufacturing the same'20097,525,158'Semiconductor device having pixel electrode and peripheral circuit'20097,381,599'Semiconductor device and method for manufacturing the same'20087,183,614'Semiconductor device and method of manufacture thereof'20076,997,985'Semiconductor, semiconductor device, and method for fabricating the same'20066,979,840'Thin film transistors having anodized metal film between the gate wiring and drain wiring'20056,977,392'Semiconductor display device'20056,974,763'Method of forming semiconductor device by crystallizing amorphous silicon and forming crystallization promoting material in the same chamber'20056,906,383'Semiconductor device and method of manufacture thereof'20056,867,431'Semiconductor device and method for manufacturing the same'20056,806,125'Method of manufacturing a thin film transistor device'20046,777,711'Semiconductor display device'20046,773,971'Method of manufacturing a semiconductor device having lightly-doped drain (LDD) regions'20046,593,235'Semiconductor device with a tapered hole formed using multiple layers with different etching rates'20036,566,711'Semiconductor device having interlayer insulating film'20036,507,069'Semiconductor device and method of manufacture thereof'20036,476,447'Active matrix display device including a transistor'20026,462,403'Semiconductor device comprising thin film transistors having a passivation film formed thereon'20026,451,638'Semiconductor and process for fabricating the same'20026,396,078'Semiconductor device with a tapered hole formed using multiple layers with different etching rates'20026,346,486'Transistor device and method of forming the same'20026,338,991'Semiconductor device and method for manufacturing the same'20026,323,071'Method for forming a semiconductor device'20016,156,627'Method of promoting crystallization of an amorphous semiconductor film using organic metal CVD'20006,147,375'Active matrix display device'20006,133,620'Semiconductor device and process for fabricating the same'20006,110,770'Semiconductor and process for fabricating the same'20006,084,247'Semiconductor device having a catalyst enhanced crystallized layer'20006,049,092'Semiconductor device and method for manufacturing the same'20006,028,326'Thin film transistor including a catalytic element for promoting crystallization of a semiconductor film'20006,013,928'Semiconductor device having interlayer insulating film and method for forming the same'20006,004,831'Method for fabricating a thin film semiconductor device'19995,985,701'Process for fabricating liquid crystal electro-optical device comprising complementary thin film field effect transistors'19995,972,742'Method of making thin film transistor with anodic oxidation'19995,956,579'Semiconductor, semiconductor device, and method for fabricating the same'19995,946,560'Transistor and method of forming the same'19995,899,709'Method for forming a semiconductor device using anodic oxidation'19995,897,347'Semiconductor, semiconductor device, and method for fabricating the same'19995,897,345'Semiconductor device and process for fabricating the same'19995,888,857'Semiconductor device and method for manufacturing the same'19995,879,977'Process for fabricating a thin film transistor semiconductor device'19995,849,611'Method for forming a taper shaped contact hole by oxidizing a wiring'19985,830,786'Process for fabricating electronic circuits with anodically oxidized scandium doped aluminum wiring'19985,716,871'Semiconductor device and method of forming the same'19985,677,559'Electric circuit and method for forming the same'19975,650,338'Method for forming thin film transistor'19975,639,698'Semiconductor, semiconductor device, and method for fabricating the same'19975,608,232'Semiconductor, semiconductor device, and method for fabricating the same'19975,604,137'Method for forming a multilayer integrated circuit'19975,595,923'Method of forming a thin film transistor'19975,580,800'Method of patterning aluminum containing group IIIb Element'19965,580,792'Method of removing a catalyst substance from the channel region of a TFT after crystallization'19965,576,225'Method of forming electric circuit using anodic oxidation'19965,569,936'Semiconductor device employing crystallization catalyst'19965,563,426'Thin film transistor'19965,563,440'Semiconductor device and method for forming the same'19965,545,571'Method of making TFT with anodic oxidation process using positive and negative voltages'19965,521,107'Method for forming a field-effect transistor including anodic oxidation of the gate'19965,495,121'Semiconductor device'19965,485,019'Semiconductor device and method for forming the same'19965,426,064'Method of fabricating a semiconductor device'19955,403,772'Method for manufacturing semiconductor device'1995Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1995–2021Patents assigned to SEMICONDUCTOR ENERGY LAB (159)· patent assignee history
1995–2021Based in Kanagawa, JP· patent location history
1997–2021Based in Atsugi, JP· patent location history
2011–2016Patents assigned to UOCHI HIDEKI (34)· patent assignee history
2012–2016Patents assigned to YAMAZAKI SHUNPEI (18)· patent assignee history
2012–2016Patents assigned to AKIMOTO KENGO (12)· patent assignee history
2012–2016Patents assigned to KOMORI SHIGEKI (12)· patent assignee history
2018Based in Kangawa, JP· patent location history
2021Based in Yokohama-shi, Kanagawa, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SEMICONDUCTOR ENERGY LAB | 159 | 1995–2021 |
| UOCHI HIDEKIself | 34 | 2011–2016 |
| YAMAZAKI SHUNPEI | 18 | 2012–2016 |
| AKIMOTO KENGO | 12 | 2012–2016 |
| KOMORI SHIGEKI | 12 | 2012–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kanagawa, JP | 107 | 1995–2021 |
| Atsugi, JP | 57 | 1997–2021 |
| Yokohama-shi, Kanagawa, JP | 1 | 2021 |
| Kangawa, JP | 1 | 2018 |