Liquid crystal display device

A liquid crystal display device comprising:na first wiring;a transistor comprising:na gate electrode of same structure and composition as the first wiring;a semiconductor layer comprising polycrystalline silicon overlapping the gate electrode; anda gate insulating layer interposed between the gate electrode and the semiconductor layer;a first insulating layer over the transistor and the first wiring;a second wiring on the first insulating layer, in direct contact with the semiconductor layer through a first opening in the first insulating layer;a third wiring on the first insulating layer, in direct contact with the first wiring through a second opening in the first insulating layer, the third wiring having a same composition and structure as the second wiring;a second insulating layer over the first insulating layer, the second wiring, and the third wiring;a common electrode on the second insulating layer, in electrical contact with the first wiring through the third wiring;an island-shaped conductive layer having a same composition and structure as a portion of the common electrode;a third insulating layer over the second insulating layer, the common electrode, and the island-shaped conductive layer; anda pixel electrode on the third insulating layer, overlapping the common electrode and in electrical contact with the semiconductor layer through the second wiring and the island-shaped conductive layer,wherein an area of contact between the second wiring and the island-shaped conductive layer does not overlap the first wiring, andwherein an area of contact between the pixel electrode and the island-shaped conductive layer does not overlap the first wiring.

A liquid crystal display device comprising:na first wiring;a transistor comprising:na gate electrode of same structure and composition as the first wiring;a semiconductor layer comprising polycrystalline silicon overlapping the gate electrode; anda gate insulating layer interposed between the gate electrode and the semiconductor layer;a first insulating layer over the transistor and the first wiring;a second wiring on the first insulating layer, in direct contact with the semiconductor layer through a first opening in the first insulating layer;a third wiring on the first insulating layer, in direct contact with the first wiring through a second opening in the first insulating layer, the third wiring having a same composition and structure as the second wiring;a second insulating layer over the first insulating layer, the second wiring, and the third wiring;a common electrode on the second insulating layer, in electrical contact with the first wiring through the third wiring;an island-shaped conductive layer having a same composition and structure as a portion of the common electrode;a third insulating layer over the second insulating layer, the common electrode, and the island-shaped conductive layer;a pixel electrode on the third insulating layer, overlapping the common electrode and in electrical contact with the semiconductor layer through the second wiring and the island-shaped conductive layer,wherein the common electrode is in electrical contact with the third wiring through an opening in the second insulating layer,wherein the pixel electrode overlaps a portion of the common electrode formed in the opening in the second insulating layer,wherein an area of contact between the second wiring and the island-shaped conductive layer does not overlap the first wiring, andwherein an area of contact between the pixel electrode and the island-shaped conductive layer does not overlap the first wiring.

A liquid crystal display device comprising:na first wiring;a transistor comprising:na gate electrode of same structure and composition as the first wiring;a semiconductor layer comprising polycrystalline silicon overlapping the gate electrode; anda gate insulating layer interposed between the gate electrode and the semiconductor layer;a first insulating layer over the transistor and the first wiring;a second wiring on the first insulating layer, in direct contact with the semiconductor layer through a first opening in the first insulating layer;a third wiring on the first insulating layer, in direct contact with the first wiring through a second opening in the first insulating layer, the third wiring having a same composition and structure as the second wiring;a second insulating layer over the first insulating layer, the second wiring, and the third wiring;a common electrode on the second insulating layer, in electrical contact with the first wiring through the third wiring;an island-shaped conductive layer having a same composition and structure as a portion of the common electrode;a third insulating layer over the second insulating layer, the common electrode, and the island-shaped conductive layer;a pixel electrode on the third insulating layer, overlapping the common electrode and in electrical contact with the semiconductor layer through the second wiring and the island-shaped conductive layer,wherein the pixel electrode is in direct contact with the island-shaped conductive layer through an opening in the third insulating layer,wherein the island-shaped conductive layer is in direct contact with the second wiring through an opening in the second insulating layer,wherein the island-shaped conductive layer overlaps with the pixel electrode, the opening in the third insulating layer, the opening in the second insulating layer, the second wiring, and the first opening in the first insulating layer,wherein an area of contact between the second wiring and the island-shaped conductive layer does not overlap the first wiring, andwherein an area of contact between the pixel electrode and the island-shaped conductive layer does not overlap the first wiring.