LexDanaLexDanabeta
Inventor

Dan B. Millward

Inventor
Boise, ID, US

Overview

103→
Patents
2002–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 103 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G03Fprimary
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices13%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
B82YSpecific uses or applications of nanostructures10%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems9%
Y10TTechnical subjects covered by former us classification8%
H01LSemiconductor devices5%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
H10DInorganic electric semiconductor devices4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
B05DProcesses for applying fluent materials to surfaces, in general3%
PatentTitleYear
10,828,924Methods of forming a self-assembled block copolymer material202010,629,671Methods of forming semiconductor device structures, and methods of forming capacitor structures202010,153,200Methods of forming a nanostructured polymer material including block copolymer materials201810,137,481Methods of removing particles from over semiconductor substrates201810,090,376Methods of forming semiconductor device structures, and methods of forming capacitor structures201810,005,308Stamps and methods of forming a pattern on a substrate20189,768,021'Methods of forming semiconductor device structures including metal oxide structures'20179,431,605'Methods of forming semiconductor device structures'20169,418,848'Methods of forming patterns with a mask formed utilizing a brush layer'20169,315,609'Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference'20169,293,328'Semiconductor device structures comprising a polymer bonded to a base material and methods of fabrication'20169,276,059'Semiconductor device structures including metal oxide structures'20169,257,256'Templates including self-assembled block copolymer films'20169,235,134'Lens heating compensation in photolithography'20169,234,273'Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same'20169,229,328'Methods of forming semiconductor device structures, and related semiconductor device structures'20169,184,058'Methods of forming patterns by using a brush layer and masks'20159,177,794'Methods of patterning substrates'20159,140,977'Imaging devices, methods of forming same, and methods of forming semiconductor device structures'20159,142,420'Extensions of self-assembled structures to increased dimensions via a “bootstrap” self-templating method'20159,096,730'Methods of utilizing block copolymer to form patterns'20159,087,699'Methods of forming an array of openings in a substrate, and related methods of forming a semiconductor device structure'20158,999,492'Method to produce nanometer-sized features with directed assembly of block copolymers'20158,993,088'Polymeric materials in self-assembled arrays and semiconductor structures comprising polymeric materials'20158,974,678'Methods using block co-polymer self-assembly for sub-lithographic patterning'20158,956,713'Methods of forming a stamp and a stamp'20158,945,700'Polymeric materials in self-assembled arrays and semiconductor structures comprising polymeric materials'20158,940,102'Methods of removing particles from over semiconductor substrates'20158,900,963'Methods of forming semiconductor device structures, and related structures'20148,883,372'Reticle with composite polarizer and method of simultaneous optimization of imaging of a set of different patterns'20148,853,311'Block copolymer-comprising compositions and methods of purifying PS-b-PXVP'20148,845,908'Reticles, and methods of mitigating asymmetric lens heating in photolithography'20148,834,956'Methods of utilizing block copolymer to form patterns'20148,815,497'Semiconductor constructions and methods of forming patterns'20148,801,894'Sub-10 NM line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers'20148,785,559'Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide'20148,784,974'Sub-10 NM line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers'20148,753,738'Registered structure formation via the application of directed thermal energy to diblock copolymer films'20148,736,814'Lithography wave-front control system and method'20148,728,721'Methods of processing substrates'20148,728,714'Methods for adhering materials, for enhancing adhesion between materials, and for patterning materials, and related semiconductor device structures'20148,696,918'Methods of utilizing block copolymer to form patterns'20148,669,645'Semiconductor structures including polymer material permeated with metal oxide'20148,642,157'One-dimensional arrays of block copolymer cylinders and applications thereof'20148,633,112'Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference'20148,625,078'Illumination design for lens heating mitigation'20148,609,221'Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces'20138,562,844'Methods using block co-polymer self-assembly for sub-lithographic patterning'20138,557,128'Sub-10 nm line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers'20138,551,808'Methods of patterning a substrate including multilayer antireflection coatings'20138,518,275'Graphoepitaxial self-assembly of arrays of downward facing half-cylinders'20138,513,359'Crosslinkable graft polymer non preferentially wetted by polystyrene and polyethylene oxide'20138,512,846'Two-dimensional arrays of holes with sub-lithographic diameters formed by block copolymer self-assembly'20138,507,191'Methods of forming a patterned, silicon-enriched developable antireflective material and semiconductor device structures including the same'20138,486,611'Semiconductor constructions and methods of forming patterns'20138,455,082'Polymer materials for formation of registered arrays of cylindrical pores'20138,450,418'Methods of forming block copolymers, and block copolymer compositions'20138,445,592'Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide'20138,440,371'Imaging devices, methods of forming same, and methods of forming semiconductor device structures'20138,426,313'Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference'20138,409,449'Registered structure formation via the application of directed thermal energy to diblock copolymer films'20138,404,124'Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces'20138,394,483'Two-dimensional arrays of holes with sub-lithographic diameters formed by block copolymer self-assembly'20138,394,579'Methods of forming patterns'20138,372,295'Extensions of self-assembled structures to increased dimensions via a “bootstrap” self-templating method'20138,357,784'Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same'20138,314,206'Block copolymer-comprising compositions and methods of purifying PS-b-PXVP'20128,304,493'Methods of forming block copolymers'20128,294,139'Multilayer antireflection coatings, structures and devices including the same and methods of making the same'20128,273,647'Methods of forming patterns, and methods of forming integrated circuits'20128,236,899'Zwitterionic block copolymers and methods'20128,226,772'Methods of removing particles from over semiconductor substrates'20128,173,034'Methods of utilizing block copolymer to form patterns'20128,123,960'Sub-10 nm line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers'20128,123,962'Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces'20128,123,961'Extensions of self-assembled structures to increased dimensions via a “bootstrap” self-templating method'20128,114,300'Multi-layer method for formation of registered arrays of cylindrical pores in polymer films'20128,114,301'Graphoepitaxial self-assembly of arrays of downward facing half-cylinders'20128,101,261'One-dimensional arrays of block copolymer cylinders and applications thereof'20128,097,175'Method for selectively permeating a self-assembled block copolymer, method for forming metal oxide structures, method for forming a metal oxide pattern, and method for patterning a semiconductor structure'20128,088,551'Methods of utilizing block copolymer to form patterns'20128,083,953'Registered structure formation via the application of directed thermal energy to diblock copolymer films'20118,084,345'Methods of forming dispersions of nanoparticles, and methods of forming flash memory cells'20118,080,615'Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide'20118,071,467'Methods of forming patterns, and methods of forming integrated circuits'20118,022,147'Zwitterionic block copolymers and methods'20118,017,184'β-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same'20117,964,107'Methods using block copolymer self-assembly for sub-lithographic patterning'20117,959,975'Methods of patterning a substrate'20117,910,660'Zwitterionic block copolymers and methods'20117,858,523'Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same'20107,785,998'Methods of forming dispersions of nanoparticles, and methods of forming flash memory cells'20107,732,533'Zwitterionic block copolymers and methods'20107,572,731'Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same'20097,462,559'Systems and methods for forming metal-containing layers using vapor deposition processes'20087,439,338'Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same'20087,427,300'Hydrophilic finish for fibrous substrates'20087,300,873'Systems and methods for forming metal-containing layers using vapor deposition processes'20076,679,924'Dye fixatives'20046,607,994'Nanoparticle-based permanent treatments for textiles'20036,516,633'Photochromic glass nanoparticles and methods of preparation'20036,517,933'Hybrid polymer materials'20036,497,733'Dye fixatives'2002

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2002–2008Based in Alameda, CA, US· patent location history
2007–2020Patents assigned to MICRON TECHNOLOGY INC (91)· patent assignee history
2007–2010Based in Kuna, ID, US· patent location history
2008–2020Based in Boise, ID, US· patent location history
2011–2015Patents assigned to MILLWARD DAN B (35)· patent assignee history
2011–2016Patents assigned to MILLWARD DAN (23)· patent assignee history
2013–2016Patents assigned to JAIN KAVERI (9)· patent assignee history
2013–2016Patents assigned to ZHANG ZISHU (9)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
MICRON TECHNOLOGY INC912007–2020
MILLWARD DAN Bself352011–2015
MILLWARD DANself232011–2016
JAIN KAVERI92013–2016
ZHANG ZISHU92013–2016
Locations
LocationPatentsSpan
Boise, ID, US942008–2020
Alameda, California, US62002–2008
Kuna, ID, US32007–2010