Methods for fabricating sublithographic, nanoscale microstructures in line arrays utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. Semiconductor structures may include self-assembled block copolymer materials in the form of lines of half-cylinders of a minority block matrix of a majority block of the block copolymer. The lines of half-cylinders may be within trenches in the semiconductor structures.

Claims

17 · 2 independent · depth 3

17 granted claims

›1.independentA polymeric material, comprising:na self-assembled block copolymer material within a trench overlying a substrate, the trench having sidewalls, ends, …+3

›5.independentA semiconductor structure, comprising:na material over a substrate defining at least one trench in the material, the at least one trench having a tren…+12

›6.↳ 5The semiconductor structure of claim 5, wherein the trench floor comprises a neutral wetting material over the substrate, and the sidewalls and ends c…d2+2

›9.↳ 5The semiconductor structure of claim 5, wherein the material over the substrate defining at least one trench comprises a material preferentially wetti…d2

›10.↳ 5The semiconductor structure of claim 5, further comprising a material preferentially wetting to the minority block overlying the polymeric material.d2

›11.↳ 5The semiconductor structure of claim 5, wherein the minority block further comprises a metal.d2

›12.↳ 5The semiconductor structure of claim 5, wherein the at least one trench has a width of about 1.5-2 times an L value of the block copolymer material, a…d2

›13.↳ 5The semiconductor structure of claim 5, wherein the at least one trench has a width greater than about two times an L value of the block copolymer mat…d2

›14.↳ 5The semiconductor structure of claim 5, wherein the block copolymer material has an L value from about 10 nm to about 100 nm.d2

›15.↳ 5The semiconductor structure of claim 5, wherein the block copolymer material comprises a ternary blend comprising a first homopolymer, a second homopo…d2

›16.↳ 5The semiconductor of claim 5, wherein the block copolymer material comprises a material selected from the group consisting of poly(styrene)-b-poly(vin…d2

›17.↳ 5The semiconductor structure of claim 5, wherein the block copolymer material comprises an ABA copolymer or an ABC copolymer.d2

Classifications

12 codes

IPC · International Patent Classification

Section B — Performing operations; transporting

B82Y30/00
B81C1/00

Section H — Electricity

H01L29/06
H01L29/02

USPC · US Patent Classification

428/120257/59977/900977/895257/62438/947428/161977/888

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Pendency

1.6 y

586 days filing → grant

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after a restriction

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no RCE

Examiner

Michael Lebentritt

art unit 2829 · TC 2800

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1 priority documents

›Priority documents — 1

Type	Document	Date
related publication	US 20130285214 A1	31 Oct 2013

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