Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces

A method for fabricating nanoscale microstructures, comprising:nforming a film comprising a cylindrical-phase block copolymer within a plurality of trenches to a thickness of about Lo, each trench having a width, length, sidewalls, ends and a floor, wherein the sidewalls and ends of the trenches are preferential wetting to a first block of the block copolymer, the floor of at least one trench is preferential wetting to said first block and the floor of another trench is neutral wetting to a second block of the block copolymer; andcausing the block copolymer film to self-assemble to form perpendicularly-oriented cylindrical domains of the minority block of the block copolymer in a matrix of a majority block within trenches having said neutral wetting floor, and parallel-oriented half-cylindrical domains of the minority block in a matrix of the majority block within trenches having said preferential wetting floor.

A method for fabricating nanoscale microstructures, comprising:nforming a material layer on a substrate, the material layer and the substrate being preferential wetting to a first block of a block copolymer;forming a plurality of trenches in the material layer, each trench having a width, length, sidewalls, ends and a floor, wherein the sidewalls and ends of the trenches are preferential wetting to said first block of the block copolymer;forming a neutral wetting layer on the floor of at least one trench wherein at least one other trench has a preferential wetting floor;forming a film comprising a cylindrical-phase block copolymer within the trenches to a thickness of about Lo; andannealing the block copolymer film to form perpendicularly-oriented cylindrical domains of a minority block of the block copolymer in a matrix of a majority block within trenches having the neutral wetting layer on the floor of said trench, and parallel-oriented half-cylindrical domains of the minority block in a matrix of the majority block within trenches having a preferential wetting floor.

A method for fabricating nanoscale microstructures, comprising:nforming a material layer on a substrate;forming a plurality of trenches in the material layer, each trench having a width, length, sidewalls, ends and a floor, wherein the sidewalls and ends of the trenches are preferential wetting to a first block of a block copolymer;etching the floor of a first trench to a critical roughness for neutral wetting of said firstblock of the block copolymer;forming a preferential wetting layer on the floor of a second trench;forming a film comprising a cylindrical-phase block copolymer within the trenches to a thickness of about Lo; andannealing the block copolymer film to form perpendicularly-oriented cylindrical domains of a minority block of the block copolymer in a matrix of a majority block within the first trench having a neutral wetting floor, and parallel-oriented half-cylindrical domains of the minority block in a matrix of the majority block within the second trench having said preferential wetting layer on the floor of said trench.

A method for fabricating nanoscale microstructures, comprising:nforming a neutral wetting layer on a substrate, the substrate being preferential wetting to a first block of a block copolymer and the neutral wetting layer being wetting to blocks a second block of the block copolymer;forming a material layer on the neutral wetting layer;forming a plurality of trenches in the material layer, each trench having a width, length, sidewalls, ends and a floor exposing the neutral wetting layer, wherein the sidewalls and ends of the trenches are preferential wetting to said first block of the block copolymer;removing the neutral wetting layer from the floor of at least one trench to expose the preferential wetting substrate as the floor of said trench wherein at least one trench retains the neutral wetting layer as the floor of said trench;forming a film comprising a cylindrical-phase block copolymer within the trenches to a thickness of about Lo; andannealing the block copolymer film to form perpendicularly-oriented cylindrical domains of a minority block of the block copolymer in a matrix of a majority block within said trenches having the neutral wetting layer as the floor of said trench, and parallel-oriented half-cylindrical domains of the minority block in a matrix of the majority block within trench having the preferential wetting substrate as the floor of said trench.

A method of etching a substrate, comprising:nforming an etch mask, comprising:nforming a film comprising a cylindrical-phase block copolymer within a plurality of trenches to a thickness of about Lo, each trench having a width, length, sidewalls, ends and a floor, wherein the sidewalls and ends of the trenches are preferential wetting to a first block of the block copolymer, and the floor of at least one trench is preferential wetting to said first block and the floor of another trench is neutral wetting to a second block of the block copolymer;annealing the film to cause the copolymer to self-assemble to form perpendicularly-oriented cylindrical domains of a minority block of the block copolymer in a matrix of a majority block within said trench having a neutral wetting floor, and parallel-oriented half-cylindrical domains of the minority block in a matrix of the majority block within said trench having a preferential wetting floor; andselectively removing the minority polymer block to provide an array of perpendicular-oriented cylindrical openings and parallel-oriented half-cylindrical openings within the matrix of the majority polymer block; andetching the substrate through the openings of the etch mask.