Method for producing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp

One object of the present invention is to provide a method for producing a group III nitride semiconductor light-emitting device which has excellent productivity and produce a group III nitride semiconductor light-emitting device and a lamp, a method for producing a group III nitride semiconductor light-emitting device, in which a buffer layer ( 12 ) made of a group III nitride is laminated on a substrate ( 11 ), an n-type semiconductor layer ( 14 ) comprising a base layer ( 14 a ), a light-emitting layer ( 15 ), and a p-type semiconductor layer ( 16 ) are laminated on the buffer layer ( 12 ) in this order, comprising: a pretreatment step in which the substrate ( 11 ) is treated with plasma; a buffer layer formation step in which the buffer layer ( 12 ) having a composition represented by Al x Ga 1-x N (0≦x<1) is formed on the pretreated substrate ( 11 ) by activating with plasma and reacting at least a metal gallium raw material and a gas containing a group V element; and a base layer formation step in which the base layer ( 14 a ) is formed on the buffer layer ( 12 ).