LexDanaLexDanabeta
Inventor

Hisayuki Miki

Inventor
Chiba, JP

Overview

59→
Patents
2001–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 59 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers30%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
C23CCoating metallic material8%
C30BSingle-crystal growth5%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light5%
B82YSpecific uses or applications of nanostructures4%
H01LSemiconductor devices3%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution3%
C09KMaterials for miscellaneous applications, not provided for elsewhere2%
PatentTitleYear
11,121,371Cathode active material and fluoride ion battery202111,081,697Electrode active material, all solid fluoride ion battery, and method for producing electrode active material202110,128,411Light-emitting element20189,040,319'Group-III nitride compound semiconductor light-emitting device, method of manufacturing group-III nitride compound semiconductor light-emitting device, and lamp'20158,927,348'Method of manufacturing group-III nitride semiconductor light-emitting device, and group-III nitride semiconductor light-emitting device, and lamp'20158,882,971'Sputtering apparatus and manufacturing method of semiconductor light-emitting element'20148,866,186'Group III nitride semiconductor light-emitting device'20148,802,187'Solar cell and process for producing the same'20148,765,507'Method for manufacturing group III nitride semiconductor, method for manufacturing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp'20148,674,398'Group III nitride semiconductor light emitting device and production method thereof, and lamp'20148,669,129'Method for producing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp'20148,642,992'Group III nitride compound semiconductor light emitting device'20148,608,980'Phosphor, method for producing the same and light-emitting device using the same'20138,569,794'Group III nitride semiconductor device and method for manufacturing the same, group III nitride semiconductor light-emitting device and method for manufacturing the same, and lamp'20138,557,092'Sputtering deposition apparatus and backing plate for use in sputtering deposition apparatus'20138,550,645'Illumination device for display device, and display device'20138,445,302'Method for producing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp'20138,398,892'Phosphor, method for producing the same and light-emitting device using the same'20138,389,313'Deposition method of III group nitride compound semiconductor laminated structure'20138,383,439'Apparatus for manufacturing group-III nitride semiconductor layer, method of manufacturing group-III nitride semiconductor layer, group-III nitride semiconductor light-emitting device, method of manufacturing group-III nitride semiconductor light-emitting device, and lamp'20138,366,294'Light-emitting device, light-emitting module, and method for manufacturing light-emitting device'20138,273,592'Method of manufacturing group-III nitride semiconductor light emitting device, group III nitride semiconductor light emitting device and lamp'20128,236,103'Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer'20128,227,359'Method for manufacturing group III nitride semiconductor layer, method for manufacturing group III nitride semiconductor light-emitting device, and group III nitride semiconductor light-emitting device, and lamp'20128,227,284'Group-III nitride compound semiconductor light-emitting device, method of manufacturing group-III nitride compound semiconductor light-emitting device, and lamp'20128,198,179'Method for producing group III nitride semiconductor light-emitting device'20128,168,460'Method for manufacturing group III nitride compound semiconductor light-emitting device, group III nitride compound semiconductor light-emitting device, and lamp'20128,148,712'Group III nitride compound semiconductor stacked structure'20128,115,212'Positive electrode for semiconductor light-emitting device'20128,106,419'Group-III nitride compound semiconductor light-emitting device, method of manufacturing group-III nitride compound semiconductor light-emitting device, and lamp'20128,097,482'Method for manufacturing group III nitride semiconductor, method for manufacturing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp'20128,080,484'Method for manufacturing group III nitride semiconductor layer, method for manufacturing group III nitride semiconductor light-emitting device, and group III nitride semiconductor light-emitting device, and lamp'20118,049,227'Group III nitride semiconductor light emitting device, method for producing the same, and lamp thereof'20118,012,784'Method for producing group III nitride semiconductor light emitting device, group III nitride semiconductor light emitting device, and lamp'20117,888,687'Electrode for semiconductor light emitting device'20117,867,801'Apparatus for producing group-III nitride semiconductor layer, method of producing group-III nitride semiconductor layer, method of producing group-III nitride semiconductor light-emitting device, group-III nitride semiconductor light-emitting device thereof, and lamp thereof'20117,858,419'Gallium nitride-based compound semiconductor multilayer structure and production method thereof'20107,855,386'N-type group III nitride semiconductor layered structure'20107,847,314'Gallium nitride-based compound semiconductor light-emitting device'20107,759,690'Gallium nitride-based compound semiconductor light-emitting device'20107,749,785'Manufacturing method of group III nitride semiconductor light-emitting device'20107,674,644'Method for fabrication of group III nitride semiconductor'20107,655,491'P-type Group III nitride semiconductor and production method thereof'20107,612,363'N-type group III nitride semiconductor stacked layer structure'20097,601,979'Gallium nitride-based compound semiconductor multilayer structure and production method thereof'20097,585,690'Process for producing group III nitride compound semiconductor light emitting device, group III nitride compound semiconductor light emitting device and lamp'20097,521,777'Gallium nitride-based compound semiconductor multilayer structure and production method thereof'20097,498,184'Production method for semiconductor device'20097,498,611'Transparent electrode for semiconductor light-emitting device'20097,482,635'Gallium nitride-based compound semiconductor multilayer structure and production method thereof'20097,453,091'Gallium nitride-based semiconductor device'20087,436,045'Gallium nitride-based semiconductor device'20087,399,994'Transparent electrode'20087,057,210'Electrode for light-emitting semiconductor devices and method of producing the electrode'20066,852,161'METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR CRYSTAL, METHOD OF FABRICATING GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR, GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR, GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LIGHT SOURCE USING THE SEMICONDUCTOR LIGHT-EMITTING DEVICE'20056,800,501'Electrode for light-emitting semiconductor devices and method of producing the electrode'20046,403,987'Electrode for light-emitting semiconductor devices'20026,326,223'Electrode for light-emitting semiconductor devices and method of producing the electrode'20016,268,618'Electrode for light-emitting semiconductor devices and method of producing the electrode'2001

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2001–2014Patents assigned to SHOWA DENKO KK (43)· patent assignee history
2001–2006Based in Chichibu, JP· patent location history
2008–2014Based in Ichihara, JP· patent location history
2009–2018Based in Chiba, JP· patent location history
2011–2015Patents assigned to MIKI HISAYUKI (27)· patent assignee history
2011–2015Patents assigned to YOKOYAMA YASUNORI (11)· patent assignee history
2012–2014Patents assigned to HANAWA KENZO (9)· patent assignee history
2013–2018Patents assigned to TOYODA GOSEI KK (12)· patent assignee history
2021Based in Hiratsuka, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SHOWA DENKO KK432001–2014
MIKI HISAYUKIself272011–2015
TOYODA GOSEI KK122013–2018
YOKOYAMA YASUNORI112011–2015
HANAWA KENZO92012–2014
Locations
LocationPatentsSpan
Chiba, JP292009–2018
Ichihara, JP222008–2014
Chichibu, JP62001–2006
Hiratsuka, JP22021