Inventor
Yasunori Yokoyama
Inventor
Ichihara, JP
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers23%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%
C23CCoating metallic material12%
C30BSingle-crystal growth6%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light6%
B82YSpecific uses or applications of nanostructures3%
H01LSemiconductor devices3%
C07CAcyclic or carbocyclic compounds2%
C12CBeer2%
PatentTitleYear
9,040,319'Group-III nitride compound semiconductor light-emitting device, method of manufacturing group-III nitride compound semiconductor light-emitting device, and lamp'20158,882,971'Sputtering apparatus and manufacturing method of semiconductor light-emitting element'20148,765,507'Method for manufacturing group III nitride semiconductor, method for manufacturing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp'20148,669,129'Method for producing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp'20148,614,454'Semiconductor light-emitting device, manufacturing method thereof, and lamp'20138,569,794'Group III nitride semiconductor device and method for manufacturing the same, group III nitride semiconductor light-emitting device and method for manufacturing the same, and lamp'20138,445,302'Method for producing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp'20138,383,439'Apparatus for manufacturing group-III nitride semiconductor layer, method of manufacturing group-III nitride semiconductor layer, group-III nitride semiconductor light-emitting device, method of manufacturing group-III nitride semiconductor light-emitting device, and lamp'20138,368,103'Compound semiconductor light-emitting element and method of manufacturing the same, conductive translucent electrode for compound semiconductor light-emitting element, lamp, electronic device, and mechanical apparatus'20138,273,592'Method of manufacturing group-III nitride semiconductor light emitting device, group III nitride semiconductor light emitting device and lamp'20128,227,359'Method for manufacturing group III nitride semiconductor layer, method for manufacturing group III nitride semiconductor light-emitting device, and group III nitride semiconductor light-emitting device, and lamp'20128,148,712'Group III nitride compound semiconductor stacked structure'20128,106,419'Group-III nitride compound semiconductor light-emitting device, method of manufacturing group-III nitride compound semiconductor light-emitting device, and lamp'20128,080,484'Method for manufacturing group III nitride semiconductor layer, method for manufacturing group III nitride semiconductor light-emitting device, and group III nitride semiconductor light-emitting device, and lamp'20118,012,784'Method for producing group III nitride semiconductor light emitting device, group III nitride semiconductor light emitting device, and lamp'20117,935,980'Method of manufacturing a semiconductor light-emitting device'20117,867,801'Apparatus for producing group-III nitride semiconductor layer, method of producing group-III nitride semiconductor layer, method of producing group-III nitride semiconductor light-emitting device, group-III nitride semiconductor light-emitting device thereof, and lamp thereof'20117,692,856'Focus error detecting optical system for a microscope'20106,392,105'Process for production of fluoroalcohol'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002Based in Settsu, JP· patent location history
2010Based in Tokyo, JP· patent location history
2011–2015Patents assigned to YOKOYAMA YASUNORI (13)· patent assignee history
2011–2015Patents assigned to MIKI HISAYUKI (11)· patent assignee history
2011–2013Patents assigned to SHOWA DENKO KK (10)· patent assignee history
2011–2015Based in Ichihara, JP· patent location history
2012–2014Patents assigned to HANAWA KENZO (3)· patent assignee history
2013–2015Patents assigned to TOYODA GOSEI KK (6)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| YOKOYAMA YASUNORIself | 13 | 2011–2015 |
| MIKI HISAYUKI | 11 | 2011–2015 |
| SHOWA DENKO KK | 10 | 2011–2013 |
| TOYODA GOSEI KK | 6 | 2013–2015 |
| HANAWA KENZO | 3 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Ichihara, JP | 17 | 2011–2015 |
| Tokyo, JP | 1 | 2010 |
| Settsu, JP | 1 | 2002 |