Integrated circuit package and method

This application claims the benefit of U.S. Provisional Application No 62/785,133, filed on Dec. 26, 2018, which application is hereby incorporated herein by reference.

The semiconductor industry has experienced rapid growth due to ongoing improvements in the integration density of a variety of electronic components (e.g., transistors, diodes, resistors, capacitors, etc.). For the most part, improvement in integration density has resulted from iterative reduction of minimum feature size, which allows more components to be integrated into a given area. As the demand for shrinking electronic devices has grown, a need for smaller and more creative packaging techniques of semiconductor dies has emerged. An example of such packaging systems is package-on-package (PoP) technology. In a PoP device, a top semiconductor package is stacked on top of a bottom semiconductor package to provide a high level of integration and component density. PoP technology generally enables production of semiconductor devices with enhanced functionalities and small footprints on a printed circuit board (PCB).

Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It is noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

FIGS. 1-4, 5A, 5B, 6-15, 16A-16C, 17A-17C, 18A-18E illustrate cross-sectional views of intermediate steps during a process for forming first packages, in accordance with some embodiments.

FIGS. 19-24 illustrate cross-sectional views of intermediate steps during a process for forming a system-on-wafer (SoW) package, in accordance with some embodiments.

FIGS. 25-32 illustrate cross-sectional views of intermediate steps during a process for forming a packaged device, in accordance with some embodiments.

FIGS. 33-38 illustrate top-down views of packaged devices, in accordance with some embodiments.

The following disclosure provides many different embodiments, or examples, for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.

While embodiments are described in detail below, a general description of the present disclosure is provided herein. In a general sense, the embodiments described herein provide for a package wherein integrated passive devices (IPDs) are packaged and integrated into a system-on-wafer (SoW) package (e.g., a super large fan-out wafer-scale package) by stacking IPD packages between a power module (sometimes referred to as a socket) and an integrated fan-out (InFO) structure. Embodiment SoW packages may include any combination of interconnected functional dies in a package area of 10,000 mm 2 or greater. For example, the interconnected functional dies within a SoW package may provide each component of a complete electrical system to provide high performance computing (HPC) (e.g., an accelerator of an artificial intelligence (AI) server, a cloud computing system, an edge computing system, or the like) in a data center application, a server application, or the like. The power modules may be connected to the functional dies of the SoW package through the IPD packages. Each power module may provide power management for a single functional die or a plurality of functional dies within the SoW package.

Advantageous features of some or all of the embodiments described herein may include a shorter distance between IPDs and the functional dies, which may enhance the power distribution network (PDN) performance. Some embodiments may provide integration of 3D stacked IPDs with InFO processes, thus making adoption of the embodiments practical. In some embodiments, 3D stacking of IPDs avoids the need of removing ball grid array (BGA) connectors from the socket landscape (e.g., the footprint of a package), allowing for improved current handling through increased area (e.g., more BGA connectors) for current handling.

FIGS. 1 through 16C illustrate cross-sectional views of intermediate steps during a process for forming a first package component 100 , in accordance with some embodiments. The first package component 100 is an IPD package comprising one or more IPDs, which may be implemented between a module (e.g., a module 160 illustrated in FIGS. 17A-17C ) and an SoW package (e.g., an SoW package 400 illustrated in FIG. 24 ) according to various embodiments. FIG. 1 illustrates a first package region 101 A and a second package region 101 B in which one or more IPDs, such as IPDs 50 A discussed below in reference to FIG. 4 , may be packaged.

In FIG. 1 , a carrier substrate 102 is provided, and a release layer 104 is formed on the carrier substrate 102 . The carrier substrate 102 may be a glass carrier substrate, a ceramic carrier substrate, or the like. The carrier substrate 102 may be a wafer, such that multiple packages can be formed on the carrier substrate 102 simultaneously.

The release layer 104 may be formed of a polymer-based material, which may be removed along with the carrier substrate 102 from overlying structures that will be formed in subsequent steps. In some embodiments, the release layer 104 is an epoxy-based thermal-release material, which loses its adhesive property when heated, such as a light-to-heat-conversion (LTHC) release coating. In other embodiments, the release layer 104 may be an ultra-violet (UV) glue, which loses its adhesive property when exposed to UV light. The release layer 104 may be dispensed as a liquid and cured, may be a laminate film laminated onto the carrier substrate 102 , or may be the like. A top surface of the release layer 104 may be leveled and may have a high degree of planarity.

In FIG. 2 , a back-side redistribution structure 106 may be formed on the release layer 104 . In the embodiment shown, the back-side redistribution structure 106 includes a dielectric layer 108 , a metallization pattern 110 (sometimes referred to as redistribution layers or redistribution lines), and a dielectric layer 112 . The back-side redistribution structure 106 is optional. In some embodiments, a dielectric layer without metallization patterns is formed on the release layer 104 in lieu of the back-side redistribution structure 106 .

The dielectric layer 108 may be formed on the release layer 104 . The bottom surface of the dielectric layer 108 may be in contact with the top surface of the release layer 104 . In some embodiments, the dielectric layer 108 is formed of a polymer, such as polybenzoxazole (PBO), polyimide, benzocyclobutene (BCB), or the like. In other embodiments, the dielectric layer 108 is formed of a nitride, such as silicon nitride; an oxide, such as silicon oxide, phosphosilicate glass (PSG), borosilicate glass (BSG), boron-doped phosphosilicate glass (BPSG), or the like; or the like. The dielectric layer 108 may be formed by any acceptable deposition process, such as spin coating, chemical vapor deposition (CVD), laminating, the like, or a combination thereof.

The metallization pattern 110 may be formed on the dielectric layer 108 . As an example, the metallization pattern 110 may be formed by first forming a seed layer over the dielectric layer 108 . In some embodiments, the seed layer is a metal layer, which may be a single layer or a composite layer comprising a plurality of sub-layers formed of different materials. In some embodiments, the seed layer comprises a titanium layer and a copper layer over the titanium layer. The seed layer may be formed using, for example, physical vapor deposition (PVD) or the like. A photoresist is then formed and patterned on the seed layer. The photoresist may be formed by spin coating or the like and may be exposed to light for patterning. The pattern of the photoresist corresponds to the metallization pattern 110 . The patterning forms openings through the photoresist to expose the seed layer. A conductive material is formed in the openings of the photoresist and on the exposed portions of the seed layer. The conductive material may be formed by plating, such as electroplating or electroless plating, or the like. The conductive material may comprise a metal such as copper, titanium, tungsten, aluminum, or the like. The photoresist and portions of the seed layer on which the conductive material is not formed are then removed. The photoresist may be removed by an acceptable ashing or stripping process, such as a process using an oxygen plasma or the like. Once the photoresist is removed, exposed portions of the seed layer are removed using an acceptable etching process, such as wet or dry etching. The remaining portions of the seed layer and the conductive material form the metallization pattern 110 .

The dielectric layer 112 may be formed on the metallization pattern 110 and the dielectric layer 108 . In some embodiments, the dielectric layer 112 is formed of a polymer, which may be a photo-sensitive material such as PBO, polyimide, BCB, or the like, which may be patterned using a lithography mask. In other embodiments, the dielectric layer 112 is formed of a nitride, such as silicon nitride; an oxide, such as silicon oxide, PSG, BSG, BPSG; or the like. The dielectric layer 112 may be formed by spin coating, lamination, CVD, the like, or a combination thereof. The dielectric layer 112 may be patterned to form openings 114 exposing portions of the metallization pattern 110 . The patterning may be performed by an acceptable process, such as by exposing the dielectric layer 112 to light when the dielectric layer 112 is a photo-sensitive material or by etching using, for example, an anisotropic etch. In embodiments in which the dielectric layer 112 is a photo-sensitive material, the dielectric layer 112 may be developed after the exposure to light.

It should be appreciated that the back-side redistribution structure 106 may include any number of dielectric layers and metallization patterns. If more dielectric layers and metallization patterns are to be formed, the steps and processes discussed above may be repeated. The metallization patterns may include conductive lines and conductive vias. The conductive vias may be formed during the formation of the metallization patterns by forming the seed layer and the conductive material of the metallization pattern in an opening of the underlying dielectric layer. The conductive vias may interconnect and electrically couple the various conductive lines of the metallization patterns.

In FIG. 3 , through vias 116 are formed in the openings 114 and extending above a topmost dielectric layer of the back-side redistribution structure 106 (e.g., the dielectric layer 112 in the embodiment illustrated in FIG. 3 ). As an example, the through vias 116 may be formed by first forming a seed layer over the back-side redistribution structure 106 , e.g., on the dielectric layer 112 and portions of the metallization pattern 110 exposed by the openings 114 . In some embodiments, the seed layer is a metal layer, which may be a single layer or a composite layer comprising a plurality of sub-layers formed of different materials. In a particular embodiment, the seed layer comprises a titanium layer and a copper layer over the titanium layer. The seed layer may be formed using, for example, PVD or the like. A photoresist is formed and patterned on the seed layer. The photoresist may be formed by spin coating or the like and may be exposed to light for patterning. The pattern of the photoresist corresponds to the through vias 116 . The patterning forms openings through the photoresist to expose the seed layer. A conductive material is formed in the openings of the photoresist and on the exposed portions of the seed layer. The conductive material may be formed by plating, such as electroplating or electroless plating, or the like. The conductive material may comprise a metal, such as copper, titanium, tungsten, aluminum, or the like. The photoresist and portions of the seed layer on which the conductive material is not formed are removed. The photoresist may be removed by an acceptable ashing or stripping process, such as a process using an oxygen plasma or the like. Once the photoresist is removed, exposed portions of the seed layer are removed using an acceptable etching process, such as wet or dry etching. The remaining portions of the seed layer and the conductive material form the through vias 116 .

In FIG. 4 , dies 50 , which include IPDs 50 A, discrete passive devices 50 B, and active device dies 50 C, are adhered to the dielectric layer 112 by an adhesive 118 . A desired type and quantity of the dies 50 are adhered in each of the first package region 101 A and the second package region 101 B. In various embodiments, passive devices, such as the IPDs 50 A and the discrete passive devices 50 B may occupy an area in each of the first package region 101 A and the second package region 101 B of greater than 50 percent. In the embodiment illustrated, multiple of the dies 50 are adhered adjacent one another. The IPDs 50 A and the active device dies 50 C are each described in greater detail below with respect to FIGS. 5A and 5B , respectively.

The discrete passive devices 50 B may include, for example, one or more discrete capacitors, inductors, combinations thereof, or the like. When multiple discrete passive devices 50 B are disposed in each of the first package region 101 A and the second package region 101 B, the discrete passive devices 50 B may bonded together in a stacked configuration (as illustrated) or disposed side by side directly on the back-side redistribution structure 106 . As illustrated in FIG. 4 , each of the discrete passive devices 50 B may include a semiconductor substrate 52 B, through vias 53 B extending through the semiconductor substrate 52 B, pads 62 B disposed over the semiconductor substrate 52 B and the through vias 53 B, passivation layers 64 B disposed on the semiconductor substrate 52 B and the pads 62 B, and die connectors 66 B extending through the passivation layers 64 B. The discrete passive devices 50 B and the active device dies 50 C are optional and, in some embodiments, the discrete passive devices 50 B and/or the active device dies 50 C may be omitted from the first package region 101 A and/or the second package region 101 B.

The IPDs 50 A, the discrete passive devices 50 B, and the active device dies 50 C may have different sizes (e.g., different heights and/or surface areas), or may have the same size (e.g., same heights and/or surface areas). The space available for the through vias 116 in the first package region 101 A and the second package region 101 B may be limited, particularly when the IPDs 50 A, the discrete passive devices 50 B, and the active device dies 50 C include devices with a large footprint, such as SoCs. Use of the back-side redistribution structure 106 allows for an improved interconnect arrangement when the first package region 101 A and the second package region 101 B have limited space available for the through vias 116 .

The adhesive 118 is on back-sides of the IPDs 50 A, the discrete passive devices 50 B, and the active device dies 50 C and adheres the IPDs 50 A, the discrete passive devices 50 B, and the active device dies 50 C to the back-side redistribution structure 106 , such as to the dielectric layer 112 . The adhesive 118 may be any suitable adhesive, epoxy, die attach film (DAF), or the like. The adhesive 118 may be applied to back-sides of the IPDs 50 A, the discrete passive devices 50 B, and the active device dies 50 C or may be applied over the surface of the dielectric layer 112 on the carrier substrate 102 . For example, the adhesive 118 may be applied to the back-sides of the IPDs 50 A, the discrete passive devices 50 B, and the active device dies 50 C before singulating to separate the IPDs 50 A, the discrete passive devices 50 B, and the active device dies 50 C.

FIG. 5A illustrates an IPD 50 A, in accordance with some embodiments. The IPD 50 A may include a wide variety of passive devices, such as baluns, couplers, splitters, filters, diplexers, inductors, capacitors, resistors, or the like. In some embodiments, the IPD 50 A may be a multi-layer ceramic capacitor (MLCC), a coil inductor, a film resistor, or the like. In accordance with some embodiments, there are no active devices such as transistors or diodes in the IPD 50 A.

The IPD 50 A may be formed in a wafer, which may include different device regions that are singulated in subsequent steps to form a plurality of the IPDs 50 A. The IPD 50 A may be processed according to applicable manufacturing processes to form integrated circuits. For example, the IPD 50 A may include a semiconductor substrate 52 A, such as silicon, doped or undoped, or an active layer of a semiconductor-on-insulator (SOI) substrate. The semiconductor substrate 52 A may include other semiconductor materials, such as germanium; a compound semiconductor including silicon carbide, gallium arsenic, gallium phosphide, indium phosphide, indium arsenide, and/or indium antimonide; an alloy semiconductor including SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, and/or GaInAsP; or combinations thereof. Other substrates, such as multi-layered or gradient substrates, may also be used. The semiconductor substrate 52 A has an active surface (e.g., the surface facing upwards in FIG. 5A ), sometimes called a front-side, and an inactive surface (e.g., the surface facing downwards in FIG. 5A ), sometimes called a back-side.

An inter-layer dielectric (ILD) 56 A is formed over the front side of the semiconductor substrate 52 A. The ILD 56 A may include one or more dielectric layers formed of materials such as phosphosilicate glass (PSG), borosilicate glass (BSG), boron-doped phosphosilicate glass (BPSG), undoped silicate glass (USG), or the like.

An interconnect structure 60 A is included over the ILD 56 A. The interconnect structure 60 A may be used to interconnect various passive devices included in the IPD 50 A. The interconnect structure 60 A may further define the various passive devices included in the IPD 50 A. For example, a region 70 A of the interconnect structure 60 A may define a resistor, a region 70 B of the interconnect structure 60 A may define a capacitor, and a region 70 C of the interconnect structure 60 A may define an inductor. However, each of the regions 70 A, 70 B, and 70 C may define any passive devices of the IPD 50 A.

The interconnect structure 60 A may be formed by, for example, metallization patterns in dielectric layers on the ILDA 56 . The metallization patterns include metal lines and vias formed in one or more low-k dielectric layers. The metallization patterns of the interconnect structure 60 A are electrically coupled to the passive devices of the IPD 50 A.

The IPD 50 A further includes pads 62 A, such as aluminum pads, to which external connections are made. The pads 62 A are on the front side of the IPD 50 A, such as in and/or on the interconnect structure 60 A. One or more passivation films 64 A are on the IPD 50 A, such as on portions of the interconnect structure 60 A and the pads 62 A. Openings extend through the passivation films 64 A to the pads 62 A. Die connectors 66 A, such as conductive pillars (formed of a metal such as copper, for example), extend through the openings in the passivation films 64 A and are physically and electrically coupled to respective ones of the pads 62 A. The die connectors 66 A may be formed by, for example, plating, or the like. The die connectors 66 A electrically couple the respective passive devices of the IPD 50 A to external devices.

Optionally, solder regions (e.g., solder balls or solder bumps) may be disposed on the pads 62 A. The solder balls may be used to perform chip probe (CP) testing on the IPD 50 A. The CP testing may be performed on the IPD 50 A to ascertain whether the IPD 50 A is a known good die (KGD). Thus, only IPDs 50 A, which are KGDs, undergo subsequent processing are packaged, and dies, which fail the CP testing, are not packaged. After testing, the solder regions may be removed in subsequent processing steps.

A dielectric layer 68 A may be included on the front side of the IPD 50 A, such as on the passivation films 64 A and the die connectors 66 A. The dielectric layer 68 A laterally encapsulates the die connectors 66 A, and the dielectric layer 68 A is laterally coterminous with the IPD 50 A. Initially, the dielectric layer 68 A may bury the die connectors 66 A, such that a topmost surface of the dielectric layer 68 A is above topmost surfaces of the die connectors 66 A. In some embodiments where solder regions are disposed on the die connectors 66 A, the dielectric layer 68 A may bury the solder regions as well. Alternatively, the solder regions may be removed prior to forming the dielectric layer 68 A.

The dielectric layer 68 A may be a polymer such as PBO, polyimide, BCB, or the like; a nitride such as silicon nitride or the like; an oxide such as silicon oxide, PSG, BSG, BPSG, or the like; the like, or a combination thereof. The dielectric layer 68 A may be formed by, for example, spin coating, lamination, chemical vapor deposition (CVD), or the like. In some embodiments, the die connectors 66 A are exposed through the dielectric layer 68 A during formation of the IPD 50 A. In some embodiments, the die connectors 66 A remain buried and are exposed during a subsequent process for packaging the IPD 50 A. Exposing the die connectors 66 A may remove any solder regions that may be present on the die connectors 66 A.

In some embodiments, the IPD 50 A may be a stacked device that includes multiple semiconductor substrates 52 A. In such embodiments, the IPD 50 A includes multiple semiconductor substrates 52 A interconnected by through-substrate vias (TSVs). Each of the semiconductor substrates 52 A may have an interconnect structure 60 A.

FIG. 5B illustrates an active device die 50 C, in accordance with some embodiments. The active device die 50 C will be packaged in subsequent processing to form an integrated circuit package. The active device die 50 C may be a logic die (e.g., central processing unit (CPU), a graphics processing unit (GPU), a system-on-a-chip (SoC), an application processor (AP), a microcontroller, or the like), a memory die (e.g., a dynamic random access memory (DRAM) die, a static random access memory (SRAM) die, a high bandwidth memory (HBM) die, or the like), an input/output (I/O) interface die, a power management die (e.g., a power management integrated circuit (PMIC) die or the like), a radio frequency (RF) die, a sensor die, a micro-electro-mechanical-system (MEMS) die, a signal processing die (e.g., a digital signal processing (DSP) die or the like), a front-end die (e.g., an analog front-end (AFE) die or the like), the like, or combinations thereof.

The active device die 50 C may be formed in a wafer, which may include different device regions that are singulated in subsequent steps to form a plurality of active device dies. The active device die 50 C may be processed according to applicable manufacturing processes to form integrated circuits. For example, the active device die 50 C includes a semiconductor substrate 52 C, such as silicon, doped or undoped, or an active layer of a semiconductor-on-insulator (SOI) substrate. The semiconductor substrate 52 C may include other semiconductor materials, such as germanium; a compound semiconductor including silicon carbide, gallium arsenic, gallium phosphide, indium phosphide, indium arsenide, and/or indium antimonide; an alloy semiconductor including SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, and/or GaInAsP; or combinations thereof. Other substrates, such as multi-layered or gradient substrates, may also be used. The semiconductor substrate 52 C has an active surface (e.g., the surface facing upwards in FIG. 5B ), sometimes called a front-side, and an inactive surface (e.g., the surface facing downwards in FIG. 5B ), sometimes called a back-side.

Devices 54 may be formed at the front side of the semiconductor substrate 52 . The devices 54 may be active devices (e.g., transistors, diodes, or the like), capacitors, resistors, or the like. An inter-layer dielectric (ILD) 56 C is formed over the front side of the semiconductor substrate 52 C. The ILD 56 C surrounds and may cover the devices 54 . The ILD 56 C may include one or more dielectric layers formed of materials such as phosphosilicate glass (PSG), borosilicate glass (BSG), boron-doped phosphosilicate glass (BPSG), undoped silicate glass (USG), or the like.

Conductive plugs 58 extend through the ILD 56 C to electrically and physically couple the devices 54 . For example, when the devices 54 are transistors, the conductive plugs 58 may couple the gates and source/drain regions of the transistors. The conductive plugs 58 may be formed of tungsten, cobalt, nickel, copper, silver, gold, aluminum, the like, or combinations thereof. An interconnect structure 60 C is included over the ILD 56 C and the conductive plugs 58 . The interconnect structure 60 C interconnects the devices 54 to form an integrated circuit. The interconnect structure 60 C may be formed by, for example, metallization patterns in dielectric layers on the ILD 56 C. The metallization patterns include metal lines and vias formed in one or more low-k dielectric layers. The metallization patterns of the interconnect structure 60 C are electrically coupled to the devices 54 by the conductive plugs 58 .

The active device die 50 C further includes pads 62 C, such as aluminum pads, to which external connections are made. The pads 62 C are on the active side of the active device die 50 C, such as in and/or on the interconnect structure 60 C. One or more passivation films 64 C are on the active device die 50 C, such as on portions of the interconnect structure 60 C and the pads 62 C. Openings extend through the passivation films 64 C to the pads 62 C. Die connectors 66 C, such as conductive pillars (formed of a metal such as copper, for example), extend through the openings in the passivation films 64 C and are physically and electrically coupled to respective ones of the pads 62 C. The die connectors 66 C may be formed by, for example, plating, or the like. The die connectors 66 C electrically couple the respective integrated circuits of the active device die 50 C.

Optionally, solder regions (e.g., solder balls or solder bumps) may be disposed on the pads 62 C. The solder balls may be used to perform chip probe (CP) testing on the active device die 50 C. The CP testing may be performed on the active device die 50 C to ascertain whether the active device die 50 C is a known good die (KGD). Thus, only active device dies 50 C, which are KGDs, undergo subsequent processing are packaged, and dies, which fail the CP testing, are not packaged. After testing, the solder regions may be removed in subsequent processing steps.

A dielectric layer 68 C may be on the front side of the active device die 50 C, such as on the passivation films 64 C and the die connectors 66 C. The dielectric layer 68 C laterally encapsulates the die connectors 66 C, and the dielectric layer 68 C is laterally coterminous with the active device die 50 C. Initially, the dielectric layer 68 C may bury the die connectors 66 C, such that a topmost surface of the dielectric layer 68 C is above topmost surfaces of the die connectors 66 C. In some embodiments where solder regions are disposed on the die connectors 66 C, the dielectric layer 68 C may bury the solder regions as well. Alternatively, the solder regions may be removed prior to forming the dielectric layer 68 C.

The dielectric layer 68 C may be a polymer such as PBO, polyimide, BCB, or the like; a nitride such as silicon nitride or the like; an oxide such as silicon oxide, PSG, BSG, BPSG, or the like; the like, or a combination thereof. The dielectric layer 68 C may be formed, for example, by spin coating, lamination, CVD, or the like. In some embodiments, the die connectors 66 C are exposed through the dielectric layer 68 C during formation of the active device die 50 C. In some embodiments, the die connectors 66 C remain buried and are exposed during a subsequent process for packaging the active device die 50 C. Exposing the die connectors 66 C may remove any solder regions that may be present on the die connectors 66 C.

In some embodiments, the active device die 50 C is a stacked device that includes multiple semiconductor substrates 52 C. For example, the active device die 50 C may be a memory device such as a hybrid memory cube (HMC) module, a high bandwidth memory (HBM) module, or the like that includes multiple memory dies. In such embodiments, the active device die 50 C includes multiple semiconductor substrates 52 C interconnected by through-substrate vias (TSVs). Each of the semiconductor substrates 52 C may have an interconnect structure 60 C.

In FIG. 6 , an encapsulant 120 is formed on and around the dies 50 and the through vias 116 . After formation, the encapsulant 120 encapsulates the through vias 116 , the IPDs 50 A, the discrete passive devices 50 B, and the active device dies 50 C. The encapsulant 120 may be a molding compound, epoxy, or the like. The encapsulant 120 may be applied by compression molding, transfer molding, or the like, and may be formed over the carrier substrate 102 such that the through vias 116 and/or the IPDs 50 A, the discrete passive devices 50 B, and the active device dies 50 C are buried or covered. The encapsulant 120 is further formed in gap regions between the IPDs 50 A, the discrete passive devices 50 B, and the active device dies 50 C. The encapsulant 120 may be applied in liquid or semi-liquid form and subsequently cured.

In FIG. 7 , a planarization process is performed on the encapsulant 120 to expose the through vias 116 and the die connectors 66 A, 66 B, and 66 C. The planarization process may also remove material of the through vias 116 , the dielectric layers 68 A and 68 C, and/or the die connectors 66 A, 66 B, and 66 C until the die connectors 66 A, 66 B, and 66 C and the through vias 116 are exposed. Following the planarization process, top surfaces of the through vias 116 , the die connectors 66 A, 66 B, and 66 C, the dielectric layers 68 A and 68 C, and the encapsulant 120 may be level with one another (e.g., coplanar). The planarization process may be, for example, a chemical-mechanical polish (CMP) process, a grinding process, an etch-back process, or the like. In some embodiments, the planarization process may be omitted, for example, if the through vias 116 and/or die connectors 66 A, 66 B, and 66 C are already exposed.

In FIGS. 8 through 11 , a front-side redistribution structure 122 (see FIG. 11 ) is formed over the encapsulant 120 , the through vias 116 , the IPDs 50 A, the discrete passive devices 50 B, and the active device dies 50 C. The front-side redistribution structure 122 includes dielectric layers 124 , 128 , 132 , and 136 ; and metallization patterns 126 , 130 , and 134 . The metallization patterns may also be referred to as redistribution layers or redistribution lines. The front-side redistribution structure 122 illustrated in FIG. 11 includes three layers of metallization patterns and four layers of dielectric layers; however, more or fewer metallization patterns and dielectric layers may be included in the front-side redistribution structure 122 . If fewer dielectric layers and metallization patterns are to be formed, steps and process discussed below may be omitted. If more dielectric layers and metallization patterns are to be formed, steps and processes discussed below may be repeated.

In FIG. 8 , the dielectric layer 124 is deposited on the encapsulant 120 , the through vias 116 , and the die connectors 66 A, 66 B, and 66 C. In some embodiments, the dielectric layer 124 is formed of a photo-sensitive material such as PBO, polyimide, BCB, or the like, which may be patterned using a lithography mask. The dielectric layer 124 may be formed by spin coating, lamination, CVD, the like, or a combination thereof. The dielectric layer 124 is then patterned. The patterning forms openings exposing portions of the through vias 116 and the die connectors 66 A, 66 B, and 66 C. The patterning may be by an acceptable process, such as by exposing the dielectric layer 124 to light when the dielectric layer 124 is a photo-sensitive material or by etching using, for example, an anisotropic etch. If the dielectric layer 124 is a photo-sensitive material, the dielectric layer 124 may be developed after the exposure.

The metallization pattern 126 is then formed. The metallization pattern 126 includes line portions (also referred to as conductive lines) on and extending along the major surface of the dielectric layer 124 . The metallization pattern 126 further includes via portions (also referred to as conductive vias) extending through the dielectric layer 124 to physically and electrically couple the through vias 116 and the IPDs 50 A, the discrete passive devices 50 B, and the active device dies 50 C. As an example, the metallization pattern 126 may be formed by first forming a seed layer over the dielectric layer 124 and in the openings extending through the dielectric layer 124 . In some embodiments, the seed layer is a metal layer, which may be a single layer or a composite layer comprising a plurality of sub-layers formed of different materials. In some embodiments, the seed layer comprises a titanium layer and a copper layer over the titanium layer. The seed layer may be formed using, for example, PVD or the like. A photoresist is then formed and patterned on the seed layer. The photoresist may be formed by spin coating or the like and may be exposed to light for patterning. The pattern of the photoresist corresponds to the metallization pattern 126 . The patterning forms openings through the photoresist to expose the seed layer. A conductive material is then formed in the openings of the photoresist and on the exposed portions of the seed layer. The conductive material may be formed by plating, such as electroplating or electroless plating, or the like. The conductive material may comprise a metal, like copper, titanium, tungsten, aluminum, or the like. The combination of the conductive material and underlying portions of the seed layer form the metallization pattern 126 . The photoresist and portions of the seed layer on which the conductive material is not formed are removed. The photoresist may be removed by an acceptable ashing or stripping process, such as using an oxygen plasma or the like. Once the photoresist is removed, exposed portions of the seed layer are removed using an acceptable etching process, such as wet or dry etching.

In FIG. 9 , the dielectric layer 128 is deposited on the metallization pattern 126 and dielectric layer 124 . The dielectric layer 128 may be formed in a manner similar to the dielectric layer 124 , and may be formed of a material similar to the material of the dielectric layer 124 .

The metallization pattern 130 is then formed. The metallization pattern 130 includes line portions on and extending along the major surface of the dielectric layer 128 . The metallization pattern 130 further includes via portions extending through the dielectric layer 128 to physically and electrically couple the metallization pattern 126 . The metallization pattern 130 may be formed in a manner similar to the metallization pattern 126 , and may be formed of a material similar to the material of the metallization pattern 126 . In some embodiments, the metallization pattern 130 has a different size than the metallization pattern 126 . For example, the conductive lines and/or vias of the metallization pattern 130 may be wider or thicker than the conductive lines and/or vias of the metallization pattern 126 . Further, the metallization pattern 130 may be formed to a greater pitch than the metallization pattern 126 .

In FIG. 10 , the dielectric layer 132 is deposited on the metallization pattern 130 and dielectric layer 128 . The dielectric layer 132 may be formed in a manner similar to the dielectric layer 124 , and may be formed of a material similar to the material of the dielectric layer 124 .

The metallization pattern 134 is then formed. The metallization pattern 134 includes line portions on and extending along the major surface of the dielectric layer 132 . The metallization pattern 134 further includes via portions extending through the dielectric layer 132 to physically and electrically couple the metallization pattern 130 . The metallization pattern 134 may be formed in a manner similar to the metallization pattern 126 , and may be formed of a material similar to the material of the metallization pattern 126 . The metallization pattern 134 is the topmost metallization pattern of the front-side redistribution structure 122 . As such, all of the intermediate metallization patterns of the front-side redistribution structure 122 (e.g., the metallization patterns 126 and 130 ) are disposed between the metallization pattern 134 and the IPDs 50 A, the discrete passive devices 50 B, and the active device dies 50 C. In some embodiments, the metallization pattern 134 has a different size than the metallization patterns 126 and 130 . For example, the conductive lines and/or vias of the metallization pattern 134 may be wider or thicker than the conductive lines and/or vias of the metallization patterns 126 and 130 . Further, the metallization pattern 134 may be formed to a greater pitch than the metallization pattern 130 .

In FIG. 11 , the dielectric layer 136 is deposited on the metallization pattern 134 and dielectric layer 132 . The dielectric layer 136 may be formed in a manner similar to the dielectric layer 124 , and may be formed of a material similar to the material of the dielectric layer 124 . The dielectric layer 136 is the topmost dielectric layer of the front-side redistribution structure 122 . As such, all of the metallization patterns of the front-side redistribution structure 122 (e.g., the metallization patterns 126 , 130 , and 134 ) are disposed between the dielectric layer 136 and the IPDs 50 A, the discrete passive devices 50 B, and the active device dies 50 C. Further, all of the intermediate dielectric layers of the front-side redistribution structure 122 (e.g., the dielectric layers 124 , 128 , 132 ) are disposed between the dielectric layer 136 and the IPDs 50 A, the discrete passive devices 50 B, and the active device dies 50 C.

In FIG. 12 , UBMs 138 are formed for external connection to the front-side redistribution structure 122 . The UBMs 138 have bump portions on and extending along a major surface of the dielectric layer 136 , and have via portions extending through the dielectric layer 136 to physically and electrically couple to the metallization pattern 134 . As a result, the UBMs 138 are electrically coupled to the through vias 116 and the IPDs 50 A, the discrete passive devices 50 B, and the active device dies 50 C. The UBMs 138 may be formed of the same material as the metallization pattern 126 . In some embodiments, the UBMs 138 may have different sizes from the metallization patterns 126 , 130 , and 134 .

In FIG. 13 , conductive connectors 150 are formed on the UBMs 138 . The conductive connectors 150 may be ball grid array (BGA) connectors, solder balls, metal pillars, controlled collapse chip connection (C4) bumps, micro bumps, electroless nickel-electroless palladium-immersion gold technique (ENEPIG) formed bumps, or the like. The conductive connectors 150 may include a conductive material such as solder, copper, aluminum, gold, nickel, silver, palladium, tin, the like, or a combination thereof. In some embodiments, the conductive connectors 150 are formed by initially forming a layer of solder through evaporation, electroplating, printing, solder transfer, ball placement, or the like. Once a layer of solder has been formed on the structure, a reflow may be performed in order to shape the material into the desired bump shapes. In another embodiment, the conductive connectors 150 comprise metal pillars (such as a copper pillar) formed by a sputtering, printing, electro plating, electroless plating, CVD, or the like. The metal pillars may be solder free and have substantially vertical sidewalls. In some embodiments, a metal cap layer is formed on the top of the metal pillars. The metal cap layer may include nickel, tin, tin-lead, gold, silver, palladium, indium, nickel-palladium-gold, nickel-gold, the like, or a combination thereof and may be formed by a plating process.

In FIG. 14 , the structure of FIG. 13 is flipped, placed on tape 149 , and the carrier substrate 102 is de-bonded from the back-side redistribution structure 106 , e.g., the dielectric layer 108 . In accordance with some embodiments, the de-bonding includes projecting a light such as a laser light or a UV light on the release layer 104 so that the release layer 104 decomposes under the heat of the light and the carrier substrate 102 can be removed. The structure is then flipped over and placed on the tape 149 .

Further in FIG. 14 , the front-side redistribution structure 122 may be pre-cut. A cutting apparatus may partially cut into the front-side redistribution structure 122 in a scribe line area between the first package region 101 A and the second package region 101 B to form recesses (not separately illustrated) in the front-side redistribution structure 122 . In some embodiments, the cutting apparatus for the pre-cut process is a laser. The pre-cut process may prevent delamination of the front-side redistribution structure 122 and its layers during the subsequent singulation process (see, e.g., FIGS. 16A-16C ).

In FIG. 15 , openings 151 are formed through the dielectric layer 108 to expose portions of the metallization pattern 110 . The openings 151 may be formed, for example, using laser drilling, etching, or the like.

In FIGS. 16A-16C , various external connectors are formed in the openings 151 to form first package components 100 in the first package region 101 A and the second package region 101 B. In FIG. 16A , conductive connectors 152 are formed on the metallization pattern 110 in the openings 151 , forming first package components 100 A in the first package region 101 A and the second package region 101 B. The conductive connectors 152 may be ball grid array (BGA) connectors, solder balls, metal pillars, controlled collapse chip connection (C4) bumps, micro bumps, electroless nickel-electroless palladium-immersion gold technique (ENEPIG) formed bumps, or the like. The conductive connectors 152 may include a conductive material such as solder, copper, aluminum, gold, nickel, silver, palladium, tin, the like, or a combination thereof. In some embodiments, the conductive connectors 152 are formed by initially forming a layer of solder through such commonly used methods such as evaporation, electroplating, printing, solder transfer, ball placement, or the like. Once a layer of solder has been formed on the structure, a reflow may be performed in order to shape the material into the desired bump shapes.

In FIG. 16B , pads 154 are formed on the metallization pattern 110 in the openings 151 , forming first package components 100 B in the first package region 101 A and the second package region 101 B. The pads 154 are used to couple to conductive connectors 156 and may be referred to as under bump metallurgies (UBMs) 154 . In the illustrated embodiment, the pads 154 are formed in the openings 151 through the dielectric layer 108 through to the metallization pattern 110 .

As an example, the pads 154 may be formed by first forming a seed layer over the dielectric layer 108 and in the openings 151 extending through the dielectric layer 108 . In some embodiments, the seed layer is a metal layer, which may be a single layer or a composite layer comprising a plurality of sub-layers formed of different materials. In some embodiments, the seed layer comprises a titanium layer and a copper layer over the titanium layer. The seed layer may be formed using, for example, PVD or the like. A photoresist is then formed and patterned on the seed layer. The photoresist may be formed by spin coating or the like and may be exposed to light for patterning. The pattern of the photoresist corresponds to the pads 154 . The patterning forms openings through the photoresist to expose the seed layer. A conductive material is then formed in the openings of the photoresist and on the exposed portions of the seed layer. The conductive material may be formed by plating, such as electroplating or electroless plating, or the like. The conductive material may comprise a metal, like copper, titanium, tungsten, aluminum, or the like. In some embodiments, the pads 154 may comprise alloys such as electroless nickel, electroless palladium, immersion gold (ENEPIG), electroless nickel, immersion gold (ENIG), or the like. The combination of the conductive material and underlying portions of the seed layer form the pads 154 . The photoresist and portions of the seed layer on which the conductive material is not formed are removed. The photoresist may be removed by an acceptable ashing or stripping process, such as using an oxygen plasma or the like. Once the photoresist is removed, exposed portions of the seed layer are removed using an acceptable etching process, such as wet or dry etching.

Next, the conductive connectors 156 are formed over the pads 154 . The conductive connectors 156 may be formed in a manner similar to the conductive connectors 152 , and may be formed of a material similar to the material of the conductive connectors 152 .

FIG. 16C illustrates an embodiment in which the pads 154 are formed without conductive connectors being formed over the pads 154 , forming first package components 100 C in the first package region 101 A and the second package region 101 B. The pads 154 may be formed in of a material and in a manner similar to those discussed with reference to FIG. 16B .

In FIGS. 17A-17C , modules 160 are bonded to the back-side redistribution structure 106 . The modules 160 may be power supply modules, memory modules, voltage regulator modules, integrated passive device (IPD) modules, or the like. In some embodiments, the modules 160 may include flip chip bonding, wire bonding, or the like. The modules 160 may be chip-scale packages (CSPs), multi-chip modules (MCMs), or the like. The modules 160 may be packaged circuit board (PCB) modules including discrete integrated circuits and passive device in accordance with some embodiments.

FIG. 17A illustrates modules 160 A bonded to the first package components 100 A illustrated in FIG. 16A . As illustrated in FIG. 17A , the modules 160 A may include pads 162 on which conductive connectors 158 are formed. The pads 162 may be formed in a manner similar to the pads 154 , and may be formed of a material similar to the material of the pads 154 . The conductive connectors 158 may be formed in a manner similar to the conductive connectors 152 , and may be formed of a material similar to the material of the conductive connectors 152 . The modules 160 A may be placed in the first package region 101 A and the second package region 101 B using a pick and place machine or the like. Once the modules 160 A are placed, the conductive connectors 152 and the conductive connectors 158 may be reflowed to bond the modules 160 A to the back-side redistribution structure 106 .

An underfill 164 may be formed to fill the gaps between the modules 160 A and the back-side redistribution structure 106 . The underfill 164 may be formed by a capillary flow process after the modules 160 A are attached, or may be formed by a suitable deposition method before the modules 160 A are attached.

FIG. 17B illustrates the modules 160 A bonded to the first package components 100 B illustrated in FIG. 16B . The pads 162 may be formed in a manner similar to the pads 154 , and may be formed of a material similar to the material of the pads 154 . The modules 160 A may be placed in the first package region 101 A and the second package region 101 B using a pick and place machine or the like. Once the modules 160 A are placed, the conductive connectors 152 may be reflowed to bond the modules 160 A to the back-side redistribution structure 106 .

An underfill 164 may be formed to fill the gaps between the modules 160 A and the back-side redistribution structure 106 . The underfill 164 may be formed by a capillary flow process after the modules 160 A are attached, or may be formed by a suitable deposition method before the modules 160 A are attached.

FIG. 17C illustrates modules 160 B electrically coupled to the first package components 100 C illustrated in FIG. 16C . As illustrated in FIG. 17C , the modules 160 B may include spring-type contacts 166 . The modules 160 B may be placed over the first package components 100 C using a pick and place machine or the like such that the spring-type contacts 166 are disposed on the pads 154 . The modules 160 B may then be attached to the first package components 100 B using fasteners, such as fasteners 450 discussed below with respect to FIGS. 30 and 32 . The spring-type contacts 166 may be formed of a material such as copper, a copper alloy, plated beryllium copper (e.g., beryllium copper (BeCu) plated with nickel (Ni) and then plated with gold (Au)), combinations thereof, or the like. The spring-type contacts 166 may be formed by a cold forming process or the like. Including the spring-type contacts 166 allows for the modules 160 B to be mechanically fastened to the first package components 100 C without requiring a bonding or joining process and allows for the modules 160 B to be easily replaced. As illustrated in FIG. 17C , in the embodiment in which the spring-type contacts 166 are used to attach the modules 160 B to the back-side redistribution structure 106 , an underfill material may not be included between the modules 160 B and the back-side redistribution structure 106 .

In FIGS. 18A-18E , the first package components 100 in the first package region 101 A and the second package region 101 B are singulated and each of the first package components 100 , with or without at attached module 160 , is placed in a tray 170 . The first package components 100 may be singulated using a dicing process such as sawing, laser drilling, or the like. As illustrated in FIGS. 18A-18E , the first package components 100 include the front-side redistribution structure 122 , the encapsulated dies 50 , the back-side redistribution structure 106 and any of the conductive connectors 152 , the pads 154 , and the conductive connectors 156 . First packages 200 include the modules 160 bonded to the first package components 100 . After the first package components 100 are singulated, each of the first packages 200 is removed from the tape 149 and placed into a tray 170 . The trays 170 may be used to provide protection to the first packages 200 until the first packages 200 are placed during subsequent 3D packaging processes (e.g., the process used to attach the first packages 200 to the SoW package 400 , illustrated in FIG. 25 ). Placing the first packages 200 in the trays 170 may improve the reliability and yield of packages produced by the methods of the current application.

FIG. 18A illustrates a first package 200 A including the module 160 A bonded to the first package component 100 A. The module 160 A is bonded to the first package component 100 A by solder bonds between the conductive connectors 152 and the conductive connectors 158 . The module 160 A is coupled to the dies 50 of the first package component 100 A through the pads 162 , the conductive connectors 158 , the conductive connectors 152 , and the back-side redistribution structure 106 . FIG. 18B illustrates a first package 200 B including the module 160 A bonded to the first package component 100 B. The module 160 A is bonded to the first package component 100 B by solder bonds between the conductive connectors 156 and the pads 162 . The module 160 A is coupled to the dies 50 of the first package component 100 B through the pads 162 , the conductive connectors 156 , the pads 154 , and the back-side redistribution structure 106 . FIG. 18C illustrates a first package 200 C including the module 160 B bonded to the first package component 100 C. The module 160 B is placed on the first package component 100 C with the spring-type contacts 166 disposed on the pads 154 . As will be described with respect to FIG. 30 , the module 160 B may be subsequently fixed to the first package component 100 C using a mechanical brace 450 A or the like. The module 160 B is coupled to the dies 50 of the first package component 100 C through the spring-type contacts 166 , the pads 154 , and the back-side redistribution structure 106 . FIG. 18D illustrates a singulated first package component 100 C, including the pads 154 without a conductive connector thereon, placed in the tray 170 without a module 160 being attached to the first package component 100 C.

FIG. 18E illustrates a first package 200 D including a module 160 C bonded to the first package component 100 B. The module 160 C may include conductive pads (not separately illustrated) level with a surface thereof. The conductive connectors 156 are bonded to the conductive pads of the module 160 C. The module 160 C may be bonded to the first package component 100 B using processes similar to the processes used to bond the module 160 A to the first package component 100 B, discussed above in reference to FIG. 17B . The module 160 C is coupled to the dies 50 of the first package component 100 B through the conductive connectors 156 , the pads 154 , and the back-side redistribution structure 106 .

FIGS. 19 through 24 illustrate cross-sectional views of intermediate steps during a process for forming a system-on-wafer (SoW) package 400 A, in accordance with some embodiments. In FIG. 19 , a carrier substrate 402 is provided and integrated circuit dies 405 are attached to the carrier substrate 402 . A release layer 404 may be formed on the carrier substrate 402 . The carrier substrate 402 may be a glass carrier substrate, a ceramic carrier substrate, or the like. The carrier substrate 402 may be a wafer, such that multiple packages can be formed on the carrier substrate 402 simultaneously. The release layer 404 may be removed along with the carrier substrate 402 from the overlying structures that will be formed in subsequent steps. In some embodiments, the release layer 404 is any suitable adhesive, epoxy, die attach film (DAF), or the like, and is applied over the surface of the carrier substrate 402 .

The integrated circuit dies 405 are attached to the carrier substrate 402 using the release layer 404 . A desired type and quantity of integrated circuit dies 405 may be attached to the carrier substrate 102 . The integrated circuit dies 405 may be the same as or similar to the active device dies 50 C. For example, each of the integrated circuit dies 405 may be a logic die (e.g., central processing unit (CPU), a graphics processing unit (GPU), a system-on-a-chip (SoC), an application processor (AP), a microcontroller, or the like), a memory die (e.g., a dynamic random access memory (DRAM) die, a static random access memory (SRAM) die, a high bandwidth memory (HBM) die, or the like), an input/output (I/O) interface die, a power management die (e.g., a power management integrated circuit (PMIC) die or the like), a radio frequency (RF) die, a sensor die, a micro-electro-mechanical-system (MEMS) die, a signal processing die (e.g., a digital signal processing (DSP) die or the like), a front-end die (e.g., an analog front-end (AFE) die or the like), the like, or combinations thereof.

As illustrated in FIG. 19 , the integrated circuit dies 405 may include the same components as the active device dies 50 C. For example, the integrated circuit dies may include a semiconductor substrate 52 C, a device 54 on the semiconductor substrate 52 C, an ILD 56 C surrounding the device 54 , an interconnect structure 60 C over the ILD 56 C, pads 62 C over the interconnect structure 60 C, a passivation film 64 C over the interconnect structure 60 C and the pads 62 C, die connectors 66 C coupled to the pads 62 C, and a dielectric layer 68 C surrounding the die connectors 66 C.

In FIG. 20 , an encapsulant 406 is formed over the release layer 404 , surrounding the integrated circuit dies 405 . After formation, the encapsulant 406 encapsulates the integrated circuit dies 405 . The encapsulant 406 may be a molding compound, epoxy, or the like, and may be applied by compression molding, transfer molding, or the like. The encapsulant 406 may be applied in liquid or semi-liquid form and subsequently cured. In some embodiments, the encapsulant 406 is formed over the carrier substrate 402 such that the integrated circuit dies 405 are buried or covered, and a planarization process is then performed on the encapsulant 406 . The planarization process may planarize the encapsulant 406 as well as the dielectric layers 68 C of the integrated circuit dies and may expose the die connectors 66 C of the integrated circuit dies 405 . Topmost surfaces of the encapsulant 406 , the die connectors 66 C, and the dielectric layers 68 may be level with one another after the planarization process. The planarization process may be, for example, a chemical-mechanical polish (CMP).

In FIGS. 21 through 23 , a redistribution structure 430 (see FIG. 23 ) having a fine-featured portion 414 and a coarse-featured portion 426 is formed over the encapsulant 406 and the integrated circuit dies 405 . The redistribution structure 430 includes metallization patterns, dielectric layers, and under-bump metallurgies (UBMs). The metallization patterns may also be referred to as redistribution layers or redistribution lines. The redistribution structure 430 is shown as an example having four layers of metallization patterns. More or fewer dielectric layers and metallization patterns may be formed in the redistribution structure 430 . If fewer dielectric layers and metallization patterns are to be formed, steps and process discussed below may be omitted. If more dielectric layers and metallization patterns are to be formed, steps and processes discussed below may be repeated. The fine-featured portion 414 and the coarse-featured portion 426 of the redistribution structure 430 include metallization patterns and dielectric layers of differing sizes.

In FIG. 21 , the fine-featured portion 414 of the redistribution structure 430 is formed. The fine-featured portion 414 of the redistribution structure 430 includes dielectric layers 408 and 411 ; and metallization patterns 410 and 412 . In some embodiments, the dielectric layers 408 and 411 are formed from a same dielectric material, and are formed to a same thickness. Likewise, in some embodiments, the conductive features of the metallization patterns 410 and 412 are formed from a same conductive material, and are formed to a same thickness. In particular, the dielectric layers 408 and 411 have a first thickness T 1 that is small, such as in the range of about 5 μm to about 40 μm, and the conductive features of the metallization patterns 410 and 412 have a second thickness T 2 that is small, such as in the range of about 1 μm to about 25 μm.

As an example of forming the fine-featured portion 414 of the redistribution structure 430 , the dielectric layer 408 is deposited on the encapsulant 406 , the dielectric layers 68 C, and the die connectors 66 C. In some embodiments, the dielectric layer 408 is formed of a photo-sensitive material such as PBO, polyimide, BCB, or the like, which may be patterned using a lithography mask. The dielectric layer 408 may be formed by spin coating, lamination, CVD, the like, or a combination thereof. The dielectric layer 408 is then patterned. The patterning forms openings exposing portions of the die connectors 66 C. The patterning may be by an acceptable process, such as by exposing the dielectric layer 408 to light when the dielectric layer 408 is a photo-sensitive material or by etching using, for example, an anisotropic etch. If the dielectric layer 408 is a photo-sensitive material, the dielectric layer 408 can be developed after the exposure.

The metallization pattern 410 is then formed. The metallization pattern 410 has line portions (also referred to as conductive lines or traces) on and extending along the major surface of the dielectric layer 408 , and has via portions (also referred to as conductive vias) extending through the dielectric layer 408 to physically and electrically couple the die connectors 66 C of the integrated circuit dies 405 . As an example, the metallization pattern 410 may be formed by forming a seed layer over the dielectric layer 408 and in the openings extending through the dielectric layer 408 . In some embodiments, the seed layer is a metal layer, which may be a single layer or a composite layer comprising a plurality of sub-layers formed of different materials. In some embodiments, the seed layer comprises a titanium layer and a copper layer over the titanium layer. The seed layer may be formed using, for example, physical vapor deposition (PVD) or the like. A photoresist is then formed and patterned on the seed layer. The photoresist may be formed by spin coating or the like and may be exposed to light for patterning. The pattern of the photoresist corresponds to the metallization pattern 410 . The patterning forms openings through the photoresist to expose the seed layer. A conductive material is then formed in the openings of the photoresist and on the exposed portions of the seed layer. The conductive material may be formed by plating, such as electroplating or electroless plating, or the like. The conductive material may comprise a metal, such as copper, titanium, tungsten, aluminum, or the like. The combination of the conductive material and underlying portions of the seed layer form the metallization pattern 410 . The photoresist and portions of the seed layer on which the conductive material is not formed are removed. The photoresist may be removed by an acceptable ashing or stripping process, such as using an oxygen plasma or the like. Once the photoresist is removed, exposed portions of the seed layer are removed using an acceptable etching process, such as wet or dry etching.

The dielectric layer 411 is then deposited on the metallization pattern 410 and the dielectric layer 408 . The dielectric layer 411 may be formed in a manner similar to the dielectric layer 408 , and may be formed of a material similar to the material of the dielectric layer 408 . The metallization pattern 412 is then formed. The metallization pattern 412 has line portions on and extending along the major surface of the dielectric layer 411 , and has via portions extending through the dielectric layer 411 to physically and electrically couple the metallization pattern 410 . The metallization pattern 412 may be formed in a manner similar to the metallization pattern 410 , and may be formed of a material similar to the material of the metallization pattern 410 . Although the fine-featured portion 414 is illustrated as including two dielectric layers and two metallization patterns, any number of dielectric layers and metallization patterns may be formed in the fine-featured portion 414 .

In FIG. 22 , the coarse-featured portion 426 of the redistribution structure 430 is formed. The coarse-featured portion 426 of the redistribution structure 430 includes dielectric layers 416 , 420 , and 424 ; and metallization patterns 418 and 422 . In some embodiments, the dielectric layers 416 , 420 , and 424 are formed from a same dielectric material, and are formed to a same thickness. Likewise, in some embodiments, the conductive features of the metallization patterns 418 and 422 are formed from a same conductive material, and are formed to a same thickness. In particular, the dielectric layers 416 , 420 , and 424 have a third thickness T 3 that is large, such as in the range of about 5 μm to about 40 μm, and the conductive features of the metallization patterns 418 and 422 have a fourth thickness T 4 that is large, such as in the range of about 1 μm to about 25 μm. In various embodiments, the third thickness T 3 may be greater than the first thickness T 1 (see FIG. 21 ), and the fourth thickness T 4 may be greater than the second thickness T 2 (see FIG. 21 ).

To form the coarse-featured portion 426 of the redistribution structure 430 , the dielectric layer 416 may be deposited on the metallization pattern 412 and the dielectric layer 411 . The dielectric layer 416 may be formed in a manner similar to the dielectric layer 408 , and may be formed of a material similar to the material of the dielectric layer 408 . The metallization pattern 418 is then formed. The metallization pattern 418 has line portions on and extending along the major surface of the dielectric layer 416 , and has via portions extending through the dielectric layer 416 to physically and electrically couple the metallization pattern 412 . The metallization pattern 418 may be formed in a manner similar to the metallization pattern 410 , and may be formed of a material similar to the material of the metallization pattern 410 .

The dielectric layer 420 is then deposited on the metallization pattern 418 and the dielectric layer 416 . The dielectric layer 420 may be formed in a manner similar to the dielectric layer 408 , and may be formed of a material similar to the material of the dielectric layer 408 . The metallization pattern 422 is then formed. The metallization pattern 422 has line portions on and extending along the major surface of the dielectric layer 420 , and has via portions extending through the dielectric layer 420 to physically and electrically couple the metallization pattern 418 . The metallization pattern 422 may be formed in a manner similar to the metallization pattern 410 , and may be formed of a material similar to the material of the metallization pattern 410 .

The dielectric layer 424 is then deposited on the metallization pattern 422 and the dielectric layer 420 . The dielectric layer 424 may be formed in a manner similar to the dielectric layer 408 , and may be formed of a material similar to the material of the dielectric layer 408 . Although the coarse-featured portion 426 is illustrated as including three dielectric layers and two metallization patterns, any number of dielectric layers and metallization patterns may be formed in the coarse-featured portion 426 . In some embodiments, the fine-featured portion 414 and the coarse-featured portion 426 may each include 3 dielectric layers and 3 metallization patterns.

The coarse-featured portion 426 may have lower resistance compared to the fine-featured portion 414 due to the thickness of the metallization patterns included in the coarse-featured portion 426 and the fine-featured portion 414 . The coarse-featured portion 426 may be used to route power lines due to the lower resistance. The fine-featured portion 414 may be used to route signal lines, which do not require the lower resistance. Including both the coarse-featured portion 426 and the fine-featured portion 414 allows for power lines and signal lines to be routed, while minimizing the thickness of the redistribution structure 430 .

In FIG. 23 , UBMs 428 are formed for external connection to the redistribution structure 430 . The UBMs 428 have bump portions on and extending along the major surface of the dielectric layer 424 , and have via portions extending through the dielectric layer 424 to physically and electrically couple the metallization pattern 422 . As a result, the UBMs 428 are electrically coupled to the integrated circuit dies 405 . The UBMs 428 may be formed in a similar manner and of a similar material as the metallization pattern 410 . In some embodiments, the UBMs 428 have a different size than the metallization patterns 410 , 412 , 418 , and 422 .

In FIG. 24 , conductive connectors 432 are formed on the UBMs 428 , forming the SoW package 400 A. The conductive connectors 432 may be ball grid array (BGA) connectors, solder balls, metal pillars, controlled collapse chip connection (C4) bumps, micro bumps, electroless nickel-electroless palladium-immersion gold technique (ENEPIG) formed bumps, electroless nickel-immersion gold technique (ENIG) formed bumps or the like. The conductive connectors 432 may include a conductive material such as solder, copper, aluminum, gold, nickel, silver, palladium, tin, the like, or a combination thereof. In some embodiments, the conductive connectors 432 are formed by initially forming a layer of solder or solder paste through evaporation, electroplating, printing, solder transfer, ball placement, or the like. Once a layer of solder has been formed on the structure, a reflow may be performed in order to shape the material into the desired bump shapes.

In FIG. 25 , a first package 200 A, including a module 160 A bonded to a first package component 100 A, and external connectors 434 A are bonded to the SoW package 400 A. In various embodiments, the SoW package 400 A may be a super-large fan-out wafer-level package having an area of 10,000 mm 2 or greater. The first package 200 A may be placed over the SoW package 400 A using a pick and place machine or the like. Once the first package 200 A is placed, the conductive connectors 432 and the conductive connectors 150 may be reflowed to bond the first package 200 A to the SoW package 400 A. Although FIG. 25 illustrates a first package 200 A attached to the SoW package 400 A, the first package 200 B or the first package 200 C may alternatively or additionally be attached to the SoW package 400 A.

Further, external connectors 434 A are attached to the SoW package 400 A. The external connectors 434 A are electrical and physical interfaces for the SoW package 400 A to other SoW packages 400 A, other external systems, or the like. For example, when the SoW package 400 A is installed as part of a larger external system, such as a data center, the external connectors 434 A may be used to couple the SoW package 400 A to the external system. Examples of external connectors 434 A include large wire bonds, receptors for ribbon cables, flexible printed circuits, or the like. The external connectors 434 A include pads 438 , which may be similar to the UBMs 428 . The external connectors 434 A may include different components, such as a chassis, the pads 438 , and external connection pins, which may comprise different materials. The external connectors 434 A also include conductive connectors 436 on the pads 438 , which may be similar to the conductive connectors 432 . The pads 438 and the conductive connectors 432 are used for physical and electrical connection to the SoW package 400 A. Attaching the external connectors 434 A may include placing the external connectors 434 A on the SoW package 400 A using a pick and place machine or the like and then reflowing the conductive connectors 436 and the conductive connectors 432 to physically and electrically couple the pads 438 and UBMs 428 .

An underfill 440 may be formed to fill the gaps between the first package 200 A and the SoW package 400 A. The underfill 440 may be formed by a capillary flow process after the first package 200 A is attached, or may be formed by a suitable deposition method before the first package 200 A is attached.

In FIG. 26 , the carrier substrate 402 is de-bonded from the encapsulant 406 and the integrated circuit dies 405 to form a packaged device 500 A. In accordance with some embodiments, the de-bonding includes projecting a light such as a laser light or a UV light on the release layer 404 so that the release layer 404 decomposes under the heat of the light and the carrier substrate 402 can be removed.

FIG. 27 illustrates an embodiment in which the first package component 100 C is bonded to the SoW package 400 A, rather than the first package 200 A being bonded to the SoW package, as illustrated in FIG. 25 . The first package component 100 C may be placed over the SoW package 400 A using a pick and place machine or the like. Once the first package component 100 C is placed, the conductive connectors 432 and the conductive connectors 150 may be reflowed to bond the first package component 100 C to the SoW package 400 A. The external connectors 434 A, including the pads 438 and the conductive connectors 436 are also bonded to the SoW package 400 A using the same methods as discussed above with reference to FIG. 25 .

An underfill 440 may be formed to fill the gaps between the first package component 100 C and the SoW package 400 A. The underfill 440 may be formed by a capillary flow process after the first package component 100 C is attached, or may be formed by a suitable deposition method before the first package component 100 C is attached.

In FIG. 28 , the carrier substrate 402 is de-bonded from the encapsulant 406 and the integrated circuit dies 405 and bolt holes 442 are formed through the SoW package 400 A. In accordance with some embodiments, the de-bonding includes projecting a light such as a laser light or a UV light on the release layer 404 so that the release layer 404 decomposes under the heat of the light and the carrier substrate 402 can be removed. The bolt holes 442 may be formed by a drilling process such as laser drilling, mechanical drilling, or the like. The bolt holes 442 may be formed by drilling an outline for the bolt holes 442 with the drilling process, and then removing the material separated by the outline.

In FIG. 29 , a module 160 B, including spring-type contacts 166 is placed on the first package component 100 C to form a first package 200 C. The module 160 B may be similar to or the same as the module 160 B discussed above in reference to FIG. 17C and the spring-type contacts 166 may be the same as or similar to the spring-type contacts 166 discussed above in reference to FIG. 17C . The module 160 B may be placed over the first package component 100 C using a pick and place machine or the like.

In FIG. 30 , a mechanical brace 450 A is installed to secure the module 160 B to the first package component 100 C and the SoW package 400 A, forming a packaged device 500 B. The mechanical brace 450 A is a rigid support that may be formed from a material with a high stiffness, such as a metal which may include steel, titanium, cobalt, or the like. The mechanical brace 450 A physically engages portions of the module 160 B. Using the mechanical brace 450 A to clamp the module 160 C to the first package component 100 C and the SoW package 400 A may reduce any warpage in the packaged device 500 B.

The module 160 C is fastened between the first package component 100 C and the mechanical brace 450 A with bolts 452 A. The bolts 452 A are threaded through the bolt holes 442 of the SoW package 400 and through corresponding bolt holes in the mechanical brace 450 A. Fasteners 454 A are threaded onto the bolts 452 A and tightened to clamp the module 160 C between the first package component 100 C and the mechanical brace 450 A. The fasteners 454 A may be, for example, nuts that thread to the bolts 452 A. The fasteners 454 A may be tightened on the bolts 452 A such that the spring-type contacts 166 are compressed. After being attached, portions of the mechanical brace 450 A are disposed between the module 160 C and the external connectors 434 A. The embodiment illustrated in FIG. 30 may not include an underfill disposed between the module 160 B and the first package component 100 C and portions of the module 160 B may be separated from the first package component 100 C by an opening or gap.

FIG. 31 illustrates a packaged device 500 C including a first package 200 B (which includes a module 160 A bonded to a first package component 100 B), a first package 200 D (which includes a module 160 C bonded to a first package component 100 B), and a SoW package 400 B, in accordance with an embodiment. The SoW package 400 B may be formed in a manner similar to the SoW package 400 A, and may be formed of materials similar to the materials of the SoW package 400 A, but may include two regions in which the first packages 200 B and 200 D are bonded. In various embodiments, the SoW package 400 B may be a super-large fan-out wafer-level package having an area of 10,000 mm 2 or greater. The first package 200 B may be separated from the second package 200 D by a distance from about 0.05 mm to about 10 mm, such as about 0.5 mm.

The first packages 200 B and 200 D may be placed over the SoW package 400 B using a pick and place machine or the like. Once the first packages 200 B and 200 D are placed, the conductive connectors 432 and the conductive connectors 150 may be reflowed to bond the first packages 200 B and 200 D to the SoW package 400 B. Although FIG. 31 illustrates first packages 200 B and 200 D attached to the SoW package 400 B, any combination of the first packages 200 A- 200 D may alternatively or additionally be attached to the SoW package 400 B. Underfills 440 may be formed to fill the gaps between the first packages 200 B and 200 D and the SoW package 400 B. The underfills 440 may be formed by capillary flow processes after the first packages 200 B and 200 D are attached, or may be formed by a suitable deposition method before the first packages 200 B and 200 D are attached.

Further, external connectors 434 B are attached to the SoW package 400 B. The external connectors 434 B are electrical and physical interfaces for the SoW package 400 B to other SoW packages 400 B, other external systems, or the like. For example, when the SoW package 400 B is installed as part of a larger external system, such as a data center, the external connectors 434 B may be used to couple the SoW package 400 B to the external system. Examples of external connectors 434 B include large wire bonds, receptors for ribbon cables, flexible printed circuits, or the like. The external connectors 434 B include pads 438 , which may be similar to the UBMs 428 . The external connectors 434 B may include different components, such as a chassis, the pads 438 , and external connection pins, which may comprise different materials. The external connectors 434 B also include conductive connectors 436 on the pads 438 , which may be similar to the conductive connectors 432 . The pads 438 and the conductive connectors 432 are used for physical and electrical connection to the SoW package 400 B. Attaching the external connectors 434 B may include placing the external connectors 434 B on the SoW package 400 B using a pick and place machine or the like and then reflowing the conductive connectors 436 and the conductive connectors 432 to physically and electrically couple the pads 438 and UBMs 428 .

A mechanical brace 450 B is installed to secure a thermal module 460 to a back-side of the SoW package 400 B. The thermal module 460 may be a heat sink, a heat spreader, a cold plate, or the like. The mechanical brace 450 B is a rigid support that may be formed from a material with a high stiffness, such as a metal which may include steel, titanium, cobalt, or the like. The mechanical brace 450 B physically engages portions of the SoW package 400 B. Using the mechanical brace 450 B to clamp the thermal module 460 to the SoW package 400 B may reduce any warpage in the SoW package 400 B.

The thermal module 460 is fastened to the back-side of the SoW package 400 B with bolts 452 B. The bolts 452 B are threaded through bolt holes 442 formed in the SoW 400 B and through corresponding bolt holes in the mechanical brace 450 B. Fasteners 454 B are threaded onto the bolts 452 B and tightened to clamp the thermal module 460 to the SoW package 400 B, with the SoW package 400 B being disposed between the mechanical brace 450 B and the thermal module 460 . The fasteners 454 B may be, for example, nuts that thread to the bolts 452 B. After being attached, portions of the mechanical brace 450 B are disposed between the first package 200 B and the first package 200 B, and outside of the external connectors 434 B.

Before fastening together the thermal module 460 and the SoW package 400 B, a thermal interface material (TIM) 462 may be dispensed on the back side of the SoW package 400 B, physically and thermally coupling the thermal module 460 to the SoW package 400 B. In some embodiments, the TIM 462 is formed of a film comprising indium, a thermal grease, a thermal sheet, a phase change material, combinations thereof, or the like. During fastening, the fasteners 454 B are tightened, thereby increasing the mechanical force applied to the SoW package 400 B by the thermal module 460 and the mechanical brace 450 B. The fasteners 454 B are tightened until the thermal module 460 exerts a desired amount of pressure on the TIM 462 .

FIG. 32 illustrates a packaged device 500 D including modules 160 B, first package components 100 C, a mechanical brace 450 C, a mechanical brace 450 B, a thermal module 460 , and a SoW package 400 C. The SoW package 400 C may be formed in a manner similar to the SoW package 400 A, and may be formed of materials similar to the materials of the SoW package 400 A, but may include two regions in which the first package components 100 C are bonded. In various embodiments, the SoW package 400 C may be a super-large fan-out wafer-level package having an area of 10,000 mm 2 or greater.

Each of the first package components 100 C may be placed over the SoW package 400 C using a pick and place machine or the like. Once the first package components 100 C are placed, the conductive connectors 432 and the conductive connectors 150 may be reflowed to bond the first package components 100 C to the SoW package 400 C. Although FIG. 25 illustrates first packages 200 B and 200 D attached to the SoW package 400 B, any combination of the first packages 200 A- 200 D may alternatively or additionally be attached to the SoW package 400 B. Underfills 440 may be formed to fill the gaps between the first package components 100 C and the SoW package 400 C. The underfills 440 may be formed by capillary flow processes after the first package components 100 C are attached, or may be formed by a suitable deposition method before the first package components 100 C are attached.

Further, external connectors 434 B are attached to the SoW package 400 C. The external connectors 434 B are electrical and physical interfaces for the SoW package 400 C to other SoW packages 400 C, other external systems, or the like. For example, when the SoW package 400 C is installed as part of a larger external system, such as a data center, the external connectors 434 B may be used to couple the SoW package 400 C to the external system. Examples of external connectors 434 B include large wire bonds, receptors for ribbon cables, flexible printed circuits, or the like. The external connectors 434 B include pads 438 , which may be similar to the UBMs 428 . The external connectors 434 B may include different components, such as a chassis, the pads 438 , and external connection pins, which may comprise different materials. The external connectors 434 B also include conductive connectors 436 on the pads 438 , which may be similar to the conductive connectors 432 . The pads 438 and the conductive connectors 432 are used for physical and electrical connection to the SoW package 400 C. Attaching the external connectors 434 B may include placing the external connectors 434 B on the SoW package 400 C using a pick and place machine or the like and then reflowing the conductive connectors 436 and the conductive connectors 432 to physically and electrically couple the pads 438 and UBMs 428 .

Each of the modules 160 B may be placed over the respective first package components 100 C using a pick and place machine or the like. The mechanical brace 450 C is then installed to secure each of the modules 160 B to a respective first package component 100 C, forming first packages 200 C. The mechanical brace 450 C is a rigid support that may be formed from a material with a high stiffness, such as a metal which may include steel, titanium, cobalt, or the like. The mechanical brace 450 C physically engages portions of the modules 160 B. Using the mechanical brace 450 C to clamp the modules 160 B to the first package components 100 C and the SoW package 400 C may reduce any warpage in the packaged device 500 D.

The module 160 B is fastened between the first package component 100 C and the mechanical brace 450 C with bolts 452 C. The bolts 452 C are threaded through the bolt holes 442 of the SoW package 400 C and through corresponding bolt holes in the mechanical brace 450 C. Fasteners 454 C are threaded onto the bolts 452 C and tightened to clamp the module 160 B between the first package component 100 C and the mechanical brace 450 C. The fasteners 454 C may be, for example, nuts that thread to the bolts 452 C. The fasteners 454 C may be tightened on the bolts 452 C such that the spring-type contacts 166 are compressed. After being attached, portions of the mechanical brace 450 C are disposed between the first package components 100 C and between the first package components 100 C and the external connectors 434 B.

The mechanical brace 450 B is installed to secure the thermal module 460 to a back-side of the SoW package 400 C. The mechanical brace 450 C may also secure the thermal module to the back-side of the SoW package 400 C. The thermal module 460 may be a heat sink, a heat spreader, a cold plate, or the like. The mechanical brace 450 B is a rigid support that may be formed from a material with a high stiffness, such as a metal which may include steel, titanium, cobalt, or the like. The mechanical brace 450 B physically engages portions of the SoW package 400 C. Using the mechanical brace 450 B to clamp the thermal module 460 to the SoW package 400 C may reduce any warpage in the SoW package 400 C.

The thermal module 460 is fastened to the back-side of the SoW package 400 C with bolts 452 B. The bolts 452 B are threaded through bolt holes 442 formed in the SoW package 400 C and through corresponding bolt holes in the mechanical brace 450 B. Fasteners 454 B are threaded onto the bolts 452 B and tightened to clamp the thermal module 460 to the SoW package 400 C, with the SoW package 400 C being disposed between the mechanical brace 450 B and the thermal module 460 . The fasteners 454 B may be, for example, nuts that thread to the bolts 452 B. After being attached, portions of the mechanical brace 450 B are disposed outside of the external connectors 434 B.

Before fastening together the thermal module 460 and the SoW package 400 C, a thermal interface material (TIM) 462 may be dispensed on the back side of the SoW package 400 C, physically and thermally coupling the thermal module 460 to the SoW package 400 C. In some embodiments, the TIM 462 is formed of a film comprising indium, a thermal grease, a thermal sheet, a phase change material, combinations thereof, or the like. During fastening, the fasteners 454 B and 454 C are tightened, thereby increasing the mechanical force applied to the SoW package 400 C by the thermal module 460 and the mechanical braces 450 B and 450 C. The fasteners 454 B and 454 C are tightened until the thermal module 460 exerts a desired amount of pressure on the TIM 462 .

FIGS. 33-38 illustrate top-down views of SoW packages 400 , in accordance with various embodiments. In the embodiments illustrated in FIGS. 33-35 , the SoW packages 400 have circular shapes. The SoW packages 400 illustrated in FIGS. 33-35 may be intermediate structures, which may be sawed, diced, or the like to form the SoW packages 400 illustrated in FIGS. 36-38 . The SoW packages 400 include various integrated circuit dies 405 , such as computing dies 405 A, memory dies 405 B, and input/output (I/O) dies 405 C. In some embodiments, the computing dies 405 A may include central processing units (CPUs), graphics processing units (GPUs), application-specific integrated circuits (ASICs), field programmable gate arrays (FPGAs), or the like. The memory dies 405 B may include high-bandwidth memory (HBM) dies, dynamic random access memory (DRAM) dies, hybrid memory cubes (HMCs), or the like.

In the embodiment illustrated in FIG. 33 , a first package 200 is provided over each of the integrated circuit dies 405 . The first packages 200 may be any of the first packages 200 A- 200 E discussed above. In the embodiment illustrated in FIG. 34 , each pair of two memory dies 405 B share a first package 200 and each set of four computing dies 405 A share a first package 200 . In the embodiment illustrated in FIG. 35 , two of the first packages 200 may be provided for each of the I/O dies 405 C and four first packages 200 may be provided for each of the computing dies 405 A. Other configurations are possible and any number of first packages 200 may be provided for any number of integrated circuit dies 405 . The SoW packages 400 further include external connectors 434 .

In the embodiments illustrated in FIGS. 36-38 , the SoW packages 400 have octagonal shapes. This may allow for interconnected SoW packages 400 to be placed more closely to one another. The SoW packages 400 include various integrated circuit dies 405 , such as computing dies 405 A, memory dies 405 B, and input/output (I/O) dies 405 C. In the embodiment illustrated in FIG. 36 , a first package 200 is provided over each of the integrated circuit dies 405 . The first packages 200 may be any of the first packages 200 A- 200 E discussed above. In the embodiment illustrated in FIG. 37 , each pair of two memory dies 405 B share a first package 200 and each set of four computing dies 405 A share a first package 200 . In the embodiment illustrated in FIG. 38 , two of the first packages 200 may be provided for each of the I/O dies 405 C and four first packages 200 may be provided for each of the computing dies 405 A. Other configurations are possible and any number of first packages 200 may be provided for any number of integrated circuit dies 405 . The SoW packages 400 further include external connectors 434 .

Providing packaged devices 500 which include first package components 100 (including dies 50 disposed therein) disposed between modules 160 and SoW packages 400 reduces the distance between IPDs included in the first package components 100 and functional dies included in the SoW packages 400 . This enhances power distribution network (PDN) performance. Various embodiments discussed above may be applicable to high performance computing (HPC) (e.g., an accelerator of an artificial intelligence (AI) server, a cloud computing system, an edge computing system, or the like) in data center applications, server applications, or the like.

Other features and processes may also be included. For example, testing structures may be included to aid in the verification testing of the 3D packaging or 3DIC devices. The testing structures may include, for example, test pads formed in a redistribution layer or on a substrate that allows the testing of the 3D packaging or 3DIC, the use of probes and/or probe cards, and the like. The verification testing may be performed on intermediate structures as well as the final structure. Additionally, the structures and methods disclosed herein may be used in conjunction with testing methodologies that incorporate intermediate verification of known good dies to increase the yield and decrease costs.

In accordance with an embodiment, a device includes a first package component including a first integrated circuit die; a first encapsulant at least partially surrounding the first integrated circuit die; and a redistribution structure on the first encapsulant and coupled to the first integrated circuit die; a second package component bonded to the first package component, the second package component including an integrated passive device; and a second encapsulant at least partially surrounding the integrated passive device; and a power module attached to the first package component through the second package component. In an embodiment, the device further includes electrical connectors coupled to the redistribution structure, the electrical connectors encircling the second package component. In an embodiment, the second package does not include active devices disposed in the second encapsulant. In an embodiment, the power module is bonded to the second package component using solder bonds. In an embodiment, the power module is coupled to the second package using spring-type contacts. In an embodiment, the device further includes a mechanical brace extending through the first package component, the mechanical brace contacting the power module, the mechanical brace attaching the power module to the second package component. In an embodiment, the device further includes a thermal module attached to the first package component, the second package component being disposed on a first side of the first package component, and the second package component being disposed on a second side of the first package component opposite the first side. In an embodiment, the device further includes a thermal interface material disposed between the thermal module and the first package component, a mechanical brace attaching the thermal module to the first package component.

In accordance with another embodiment, a method includes forming a first package component, forming the first package component including attaching a first integrated passive device to a first redistribution structure; encapsulating the first integrated passive device with an encapsulant; and forming a second redistribution structure over the first integrated passive device and the encapsulant; attaching a power module to the second redistribution structure; and bonding the first redistribution structure to a third redistribution structure of a second package component, the second package component including a first integrated circuit die coupled to the third redistribution structure. In an embodiment, the method further includes singulating the first package component after attaching the power module to the first package component and before bonding the first package component to the second package component. In an embodiment, the power module is attached to the first package component after the first package component is bonded to the second package component. In an embodiment, attaching the power module to the first package includes placing the power module over the first package component using a pick-and-place machine and fastening the power module to the first package component using a mechanical brace, the mechanical brace including bolts extending through the second package component. In an embodiment, the power module includes spring-type contacts, and the mechanical brace applies pressure to the spring-type contacts to compress the spring-type contacts. In an embodiment, the method further includes depositing a first underfill material between the power module and the first side of the first package component and depositing a second underfill material between the second side of the first package component and the second package component.

In accordance with yet another embodiment, a device includes a first package including a plurality of integrated circuit dies; a plurality of power modules over the first package, each of the power modules being disposed directly over the integrated circuit dies in a direction perpendicular to a major surface of the first package; and a plurality of package components interposed between the integrated circuit dies and the power modules, each of the package components including an integrated passive device (IPD). In an embodiment, one of the power modules and one of the package components are disposed over each of the integrated circuit dies. In an embodiment, more than one of the power modules and more than one of the package components are disposed over each of the integrated circuit dies. In an embodiment, one of the power modules and one of the package components are disposed over more than one of the integrated circuit dies. In an embodiment, each of the package components includes a front-side redistribution structure, the IPD being disposed over the front-side redistribution structure; an encapsulant disposed over the front-side redistribution structure and surrounding the IPD; through vias extending through the encapsulant and coupled to the front-side redistribution structure; and a back-side redistribution structure over the through vias, the IPD, and the encapsulant, the back-side redistribution structure being coupled to the front-side redistribution structure through the through vias. In an embodiment, the first package has an octagonal shape in a top-down view.

The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.