Non-volatile semiconductor memory device capable of high-speed data reading

1. Field of the Invention

The present invention relates to a non-volatile semiconductor memory device, and more specifically, to a non-volatile semiconductor memory device having a transistor passing current bidirectionally as a memory cell.

2. Description of the Background Art

Among non-volatile semiconductor memory devices, one type of flash EEPROM, namely an NROM (Nitride Read Only Memory) type flash EEPROM (hereinafter referred to as NROM) has been attracting attention. An NROM has an ONO (Oxide Nitride Oxide) film as a gate insulating film, and is capable of storing two bits of information per one memory cell. By employing the NROM, chip area per one bit may be reduced compared to other non-volatile semiconductor memory device having a floating gate. The NROM is disclosed in U.S. Pat. No. 6,081,456.

FIG. 10 is a circuit diagram related to an operation of applying potential to bit lines of a memory cell array of a conventional NROM.

Referring to FIG. 10, memory cell array 2 includes bit lines BL 1 to BL 5 , word lines WL 1 to WLn, memory cells 111 to 114 having their gates connected to the word line WL 1 , and memory cells 121 to 124 having their gates connected to the word line WLn.

In the memory cell array 2 , among a row of memory cells sharing the same word line, adjacent memory cells share one bit line. Specifically, memory cells 111 and 112 are connected to a bit line BL 2 at a node NB and thus share the bit line BL 2 . Memory cells 112 and 113 are connected to a bit line BL 3 at a node NA and thus share the bit line BL 3 .

When using a current sensing type sense amplifier circuit 12 (hereinafter referred to as “current sense amplifier circuit”), such as the one mounted on a conventional flash memory, with the memory cell array 2 thus structured, a switch circuit 504 switching potential applied to bit lines is structured as shown in FIG. 10 .

The switch circuit 504 includes switch units 531 to 535 provided corresponding to bit lines BL 1 to BL 5 , respectively.

The switch unit 531 includes an N-channel MOS transistor 542 connected between the read power source line 524 , which is supplied with read power source potential VddR via the sense amplifier circuit 12 , and the bit line BL 1 for receiving a control signal VG 1 at its gate. The switch unit 531 further includes an N-channel MOS transistor 544 connected between the ground power source line 522 , which is supplied with ground potential GND, and the bit line BL 1 for receiving a control signal GG 1 at its gate.

The switch unit 532 includes an N-channel MOS transistor 552 connected between the read power source line 524 and the bit line BL 2 for receiving a control signal VG 2 at its gate, and an N-channel MOS transistor 554 connected between the ground power source line 522 and the bit line BL 2 for receiving a control signal GG 2 at its gate.

The switch unit 533 includes an N-channel MOS transistor 562 connected between the read power source line 524 and the bit line BL 3 for receiving a control signal VG 3 at its gate, and an N-channel MOS transistor 564 connected between the ground power source line 522 and the bit line BL 3 for receiving a control signal GG 3 at its gate.

The switch unit 534 includes an N-channel MOS transistor 572 connected between the read power source line 524 and the bit line BL 4 for receiving a control signal VG 4 at its gate, and an N-channel MOS transistor 574 connected between the ground power source line 522 and the bit line BL 4 for receiving a control signal GG 4 at its gate.

The switch unit 535 includes an N-channel MOS transistor 582 connected between the read power source line 524 and the bit line BL 5 for receiving a control signal VG 5 at its gate, and an N-channel MOS transistor 584 connected between the ground power source line 522 and the bit line BL 5 for receiving a control signal GG 5 at its gate.

Next, data writing/reading to/from the memory cell will be described. In the memory cell array shown in FIG. 10, each of two bit lines opposite to each other with a memory cell therebetween can be connected to either one of the ground power source line 522 or the read power source line 524 . Such a structure allows to change the direction of voltage applied to the memory cell as desired. Each memory cell has two memory areas for enabling data writing/reading to/from different memory areas by changing the direction of the current. In the following, a description will be given focused on the memory cell 112 as a representative.

FIG. 11 is a diagram related to a data writing operation to a memory area L 1 of the memory cell 112 .

Referring to FIG. 11, potential of the bit line BL 2 is set to the write potential VddW and potential of the bit line BL 3 is set to the ground potential GND when writing data to the memory area L 1 . When the word line WL 1 is activated to H level, which is the write state, write current Iw 1 flows from the bit line BL 2 to the bit line BL 3 through the non-volatile memory cell 112 . At this time, data is written to the memory area L 1 .

FIG. 12 is a diagram related to a data reading operation from a memory area L 1 of the memory cell 112 .

Referring to FIG. 12, the bit line BL 3 receives the read power source potential VddR via current sense amplifier circuit 12 when reading data from the memory area L 1 . The bit line BL 2 is coupled to the ground potential GND. The threshold voltage of the memory cell with the potentials of the bit lines thus set is large, when the data is written to the memory area L 1 .

Once the potentials of the bit lines are set, the word line WL 1 is activated to H level of the read state. If the threshold voltage of the memory cell is lower than the H level of the read state, then the read current Ir 1 flows from the bit line BL 3 to the bit line BL 2 . By detecting the current value of this time with the sense amplifier circuit 12 , whether the data has been written to the memory area L 1 or not can be read out as information.

As described above, with respect to the memory area L 1 , directions of current at writing operation and reading operation are opposite.

FIG. 13 is a diagram related to a data writing operation to a memory area L 2 of the memory cell 112 .

Referring to FIG. 13, the bit line BL 3 is provided with the write power source potential VddW and the bit line BL 2 is coupled to the ground potential when writing data to the memory area L 2 . When the word line WL 1 is activated to H level of the write state, write current Iw 2 flows from the bit line BL 3 to the bit line BL 2 . At this time, data is written to the memory area L 2 .

FIG. 14 is a diagram related to a data reading operation from the memory area L 2 of the memory cell 112 .

Referring to FIG. 14, the bit line BL 2 is provided with the read power source potential VddR via the sense amplifier circuit 12 when reading data from the memory area L 2 . The bit line BL 3 is coupled to the ground potential GND.

The threshold voltage of the memory cell with the potentials of the bit lines thus set is large, when the data is written to the memory are L 2 . When the threshold voltage of the memory cell is small, by activating the word line WL 1 to the H level of the write state, the read current Ir 2 flows from the bit line BL 2 to the bit line BL 3 . By detecting the current value of this time with the sense amplifier circuit 12 , whether the data has been written to the memory area L 2 or not can be sensed.

As described above, with respect to the memory area L 2 also, direction of current at writing operation and reading operation are opposite.

In the conventional NROM, when data reading is to be performed, bit lines are set to the floating state, except for the bit lines connected to the selected cell at both sides.

For example, when data are read from the memory cell 112 , all transistors included in the switch units 531 , 534 and 535 are set to be non-conductive. The bit lines Bl 1 , BL 4 and BL 5 are set at the floating state.

FIG. 15 is an operational waveform diagram related to data reading operation from the memory cell 112 shown in FIG. 10 .

Referring to FIGS. 10 and 15, in order to precharge the bit lines BL 1 to BL 5 at 0V, control signals GG 1 to GG 5 are activated from L level to H level at time point t 1 , and control signals GG 1 to GG 5 are inactivated from H level to L level at time point t 2 . As a result, the bit lines BL 1 to BL 5 are in the floating state precharged at 0V.

Subsequently, a read memory cell is selected, and in order to perform data reading, the control signal VG 3 is activated from L level to H level at time point t 3 . As a result, the N-channel MOS transistor 562 is rendered conductive to connect the bit line BL 3 and the read power source line 524 . Then, the bit line BL 3 is provided with the read power source potential VddR via sense amplifier circuit 12 .

Simultaneously, the control signal GG 2 is activated from L level to H level. Then, the N-channel MOS transistor 554 is rendered conductive to connect the bit line BL 2 to the ground power source line 522 . As a result, the bit line BL 2 is set at the ground potential GND. The potential of the node NA is set at the read power source potential VddR, and the potential of the node NB is set at 0V.

On the other hand, the word line WL 1 is set at 0V and thus bit lines are not conductive with each other irrespective of the states of the memory cells 111 and 113 . Therefore, the nodes NC and ND remain at the floating state being precharged at 0V.

In this state, at time point t 4 , the word line WL 1 is activated from L level to H level. At this time, if charges are trapped in the memory area L 1 of the memory cell 112 , then the threshold voltage rises and hence no current flows from the node NA to the node NB. This state corresponds to the state storing data “0”.

If no charges are trapped in the memory area L 1 , then the threshold voltage will not rise, thus in response to the activation of the word line WL 1 , current flows from the node NA to the node NB. This state corresponds to the state storing data “1”. Accordingly, by sensing current with the current sense amplifier 12 , data stored in the memory area L 1 of the memory cell 112 can be determined.

FIG. 15 shows a state in which charges are trapped in the memory area L 1 of the selected memory cell, and hence, not passing current. Actually, however, current flows thorough the sense amplifier circuit 12 for a certain period. Specifically, current flowing from the bit line BL 3 to the bit line BL 2 and the potential of the node ND gradually increases during a time period of t 4 to t 5 . This is because the memory cells 113 and 114 are in a state not trapping charges in the memory areas, the bit lines BL 4 and BL 5 are coupled to the read power source potential VddR via these memory cells on activation of the word line WL 1 , and therefore charging is initiated.

FIG. 16 is a diagram related to charging of the node ND during the time period t 4 to t 5 .

Referring to FIGS. 15 and 16, current does not flow through memory cell during the time period t 4 to t 5 . This is because charges are trapped in the memory area L 1 and hence the threshold voltage is increased even when the word line WL 1 is activated to H level, thus the transistor is not rendered conductive.

In contrast thereto, charges are not trapped in the memory areas of the memory cells 113 and 114 , and thus at these cells transistors are rendered conductive to pass the charging current to bit lines BL 4 and BL 5 .

FIG. 17 shows time changes of current flowing through the sense amplifier circuit 12 .

Referring to FIGS. 16 and 17, current as shown in a graph G 11 flows through the sense amplifier circuit 12 when no charges are trapped in the memory area L 1 and hence when data “1” is stored in the memory area L 1 . In this case, the current value is stabilized at once and thus no troubles arise.

On the other hand, when charges are trapped in the memory area L 1 of the memory cell 112 , bit lines BL 3 to BL 5 require a certain time period to complete the charging even though no current flows through the memory cell 12 . The current sense amplifier circuit 12 cannot perform normal sensing operation until the charging current is stabilized. Depending on the sensing performance of the sense amplifier, given a reference value for determining the absence of current flow as approximately 2 μA, about 25 ns of time from the initiation of sensing is required for a read operation.

As such, for reading data of “0”, a certain time period is required until the current value is stabilized, as shown in the graph G 10 .

An object of the present invention is to provide a non-volatile semiconductor memory device in which reading speed is improved.

In summary, the present invention provides a non-volatile semiconductor memory device including a first word line, a first to nth bit lines, first to n−1th non-volatile memory cells, and a potential supply circuit.

As used herein, n is a natural number of at least 3, and m is a natural number smaller than n. The first to nth bit lines cross the first word line and are positioned successively in order. The first to n−1th non-volatile memory cells are positioned respectively in n−1 areas between the first and nth bit lines and connected to the first word line together.

Each of the first to n-−1th non-volatile memory cells is connected between a higher order bit line and a lower order bit line which are two corresponding bit lines among the first to the nth bit lines. Each of the first to n−1th non-volatile memory cells includes a memory transistor. The memory transistor has its control electrode connected to the first word line and stores one bit depending on whether a first current can flow or not from the higher order bit line to the lower order bit line on activation of the first word line. The memory transistor further stores the other bit depending on whether a second current can flow from the lower order bit line to the higher bit line on activation of the first word line.

The potential supply circuit, to check whether the first current flows through non-volatile memory cell, supplies ground potential to an mth bit line supplies a read power source potential higher than the ground potential to an m+1th bit line, and supplies a bias power source potential higher than the ground potential to an m+2th bit line independent of the read power source potential. The potential supply circuit includes a current sense circuit provided on a path through which the first current flows from the read power source potential to the ground potential for sensing the first current.

Therefore, the main advantage of the present invention is in achieving quick sensing of current to reduce the reading time, when adjacent memory transistors are rendered conductive in response to the activation of word line and no current flows through the read memory transistor.

The foregoing and other objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description of the present invention when taken in conjunction with the accompanying drawings.

FIG. 1 is a schematic block diagram showing a structure of a non-volatile semiconductor memory device 1 of the present invention;

FIG. 2 is a circuit diagram showing a detailed structure of a memory cell array 2 and a switch circuit 4 shown in FIG. 1;

FIG. 3 is a cross sectional view related to a sectional structure of the memory cell 112 shown in FIG. 2;

FIG. 4 is an operational waveform diagram related to data reading from the memory cell array 2 ;

FIG. 5 is a diagram related to current sensing operation of a sense amplifier circuit 12 at a time point t 4 indicated in FIG. 4;

FIG. 6 is a waveform diagram showing time changes of sense current I 1 shown in FIG. 5;

FIG. 7 is a circuit diagram showing structures of memory cell array 2 A and switch circuit 4 A of a second embodiment;

FIG. 8 is an operational waveform diagram related to the operation of a non-volatile semiconductor memory device of the second embodiment;

FIG. 9 is an operational waveform diagram related to the operation of a non-volatile semiconductor memory device of a third embodiment;

FIG. 10 is a circuit diagram related to an operation of applying potential to bit lines of a memory cell array of the conventional NROM;

FIG. 11 is a diagram related to an operation of writing data to a memory area L 1 of the memory cell 112 ;

FIG. 12 is a diagram related to an operation of reading data from the memory area L 1 of the memory cell 112 ;

FIG. 13 is a diagram related to an operation of writing data to a memory area L 2 of the memory cell 112 ;

FIG. 14 is a diagram related to an operation of reading data from the memory area L 2 of the memory cell 112 ;

FIG. 15 is a operational waveform diagram related to an operation of reading data from the memory cell 112 shown in FIG. 10;

FIG. 16 is a diagram related to charging of a node ND at a time period t 4 to t 5 shown in FIG. 15; and

FIG. 17 illustrates time changes of the current flowing through the sense amplifier circuit 12 .

In the following, embodiments of the present invention will be described in detail referring to the drawings. Similar reference characters refer to the identical or corresponding elements throughout the drawings.

First Embodiment

FIG. 1 is a schematic block diagram showing a structure of a non-volatile semiconductor memory device 1 of the present invention.

Referring to FIG. 1, the non-volatile semiconductor memory device 1 includes bit lines BL 1 to BL 5 , word lines WL 1 to WLn, a memory cell array 2 connected to the bit lines BL 1 to BL 5 and the word lines WL 1 to WLn, and potential supply circuit 3 supplying potential to the bit lines BL 1 to BL 5 on writing/reading data to/from the memory cell array 2 .

The potential supply circuit 3 includes a decoder 6 for outputting a control signal for selecting a column of the memory cell in response to an address signal ADDRESS, and a switch circuit 4 for switching potentials to be supplied to the bit lines BL 1 to BL 5 in response to the control signal output from the decoder 6 .

The potential supply circuit 3 further includes a ground potential supply circuit 8 supplying ground potential GND to the switch circuit 4 , a bias potential supply circuit 16 for supplying bias potential VddS to the switch circuit 4 , and a write potential supply circuit 14 supplying write potential VddW to the switch circuit 4 on data writing. The write potential supply circuit 14 is activated only during the write cycle to output write potential VddW to the potential supply circuit 3 .

The potential supply circuit 3 further includes a read potential supply circuit 10 for supplying read potential VddR to the potential supply circuit 3 on data reading, and a sense amplifier circuit 12 connected between the read potential supply circuit 10 and the potential supply circuit 3 for sensing current. The sense amplifier circuit 12 is of a common current sensing type, and is capable of identifying whether the current is flowing or not on data reading.

The potential supply circuit 3 further includes a ground power source line 22 for receiving supply of the ground potential GND from the ground potential supply circuit 8 , a read power source line 24 for receiving the write power source potential from the write potential supply circuit 14 on writing and receiving the read power source potential VddR via the sense amplifier circuit 12 on reading, and a bias power source line 26 for receiving the bias potential VddS from the bias potential supply circuit 16 .

FIG. 2 is a circuit diagram showing a detailed structure of the memory cell array 2 and the switch circuit 4 shown in FIG. 1 .

Referring to FIG. 2, the memory cell array 2 includes bit lines BL 1 to BL 5 , word lines WL 1 to WLn, memory cells 111 to 114 having their gates connected to the word line WL 1 , and memory cells 121 to 124 having their gates connected to the word line WLn.

The memory cell 111 is connected between the bit line BL 1 and the bit line BL 2 . The memory cell 112 is connected between the bit line BL 2 and the bit line BL 3 . The memory cell 113 is connected between the bit line BL 3 and the bit line BL 4 . The memory cell 114 is connected between the bit line BL 4 and the bit line BL 5 .

The memory cell 121 is connected between the bit line BL 1 and the bit line BL 2 . The memory cell 122 is connected between the bit line BL 2 and the bit line BL 3 . The memory cell 123 is connected between the bit line BL 3 and the bit line BL 4 . The memory cell 124 is connected between the bit line BL 4 and the bit line BL 5 .

The switch circuit 4 includes switch units 31 to 35 provided corresponding to the bit lines BL 1 to BL 5 , respectively. The control signals VG 1 to VG 5 , GG 1 to GG 5 and FG 1 to FG 5 are applied to the switch circuit 4 from the decoder 6 shown in FIG. 1 .

The switch unit 31 includes an N-channel MOS transistor 42 connected between the read power source line 24 , to which the read power source potential VddR is supplied via the sense amplifier circuit 12 , and the bit line BL 1 for receiving at its gate a control signal VG 1 ; an N-channel MOS transistor 44 connected between the ground power source line 22 , to which the ground potential GND is supplied, and the bit line BL 1 for receiving at its gate a control signal GG 1 ; and an N-channel MOS transistor 46 connected between the bias power source line 26 , to which the bias potential VddS is supplied, and the bit line BL 1 for receiving at its gate a control signal FG 1 .

The switch unit 32 includes an N-channel MOS transistor 52 connected between the read power source line 24 and the bit line BL 2 for receiving at its gate a control signal VG 2 , an N-channel MOS transistor 54 connected between the ground power source line 22 and the bit line BL 2 for receiving at its gate a control signal GG 2 , and an N-channel MOS transistor 56 connected between the bias power source line 26 and the bit line BL 2 for receiving at its gate a control signal FG 2 .

The switch unit 33 includes an N-channel MOS transistor 62 connected between the read power source line 24 and the bit line BL 3 for receiving at its gate a control signal VG 3 , an N-channel MOS transistor 64 connected between the ground power source line 22 and the bit line BL 3 for receiving at its gate a control signal GG 3 , and an N-channel MOS transistor 66 connected between the bias power source line 26 and the bit line BL 3 for receiving at its gate a control signal FG 3 .

The switch unit 34 includes an N-channel MOS transistor 72 connected between the read power source line 24 and the bit line BL 4 for receiving at its gate a control signal VG 4 , an N-channel MOS transistor 74 connected between the ground power source line 22 and the bit line BL 4 for receiving at its gate a control signal GG 4 , and an N-channel MOS 76 connected between the bias power source line 26 and the bit line BL 4 for receiving at its gate a control signal FG 4 .

The switch unit 35 includes an N-channel MOS transistor 82 connected between the read power source line 24 and the bit line BL 5 for receiving at its gate a control signal VG 5 , an N-channel MOS transistor 84 connected between the ground power source line 22 and the bit line BL 5 for receiving at its gate a control signal GG 5 , and an N-channel MOS 86 connected between the bias power source line 26 and the bit line BL 5 for receiving at its gate a control signal FG 5 .

FIG. 3 is a cross sectional view related to the sectional structure of the memory cell 112 shown in FIG. 2 .

Referring to FIG. 3, n-type impurity regions 202 and 204 are formed on a P-type substrate 200 . The n-type impurity regions 202 and 204 correspond to the bit lines BL 1 and BL 2 , respectively.

Silicon oxide film 206 and 208 for isolating elements are respectively formed on the n-type impurity regions 202 and 204 . A silicon oxide film 210 is formed above the region between the n-type impurity regions 202 and 204 , and a nitride film 212 for storing charges is formed further thereon, and a silicon oxide film 214 is formed further thereon. Such a three-layered gate insulating film is referred to as an ONO (Oxide Nitride Oxide) layer structure.

A conductive layer 216 formed by polysilicon or the like is formed on the silicon oxide film 206 , 214 and 208 . The conductive layer 216 corresponds to the word line WL 1 shown in FIG. 2 .

Other memory cells shown in FIG. 2 have similar structures, thus descriptions thereof are not repeated.

As shown in the sectional view of FIG. 3, the memory cell is formed with single field effect transistor, and capable of storing one bit of information in each of the left area L 1 and right area L 2 of the nitride film 212 .

FIG. 4 is an operational waveform diagram related to an operation of data reading from the memory cell array 2 .

Referring to FIGS. 2 and 4, control signals GG 1 to GG 5 are activated to H level during the time period t 1 to t 2 , and in response thereto the bit lines BL 1 to BL 5 are connected to the ground power source line 22 . At time point t 2 the control signals GG 1 toGG 5 are inactivated from H level to L level, then the bit lines BL 1 to BL 5 are brought into floating state precharged to the ground potential GND.

At time point t 3 , the control signals VG 3 , GG 2 and FG 4 are activated from L level to H level. In response to the activation of the control signal VG 3 , the bit line BL 3 is connected to the read power source line 24 to receive read power source potential VddR via the sense amplifier circuit 12 . In response to the activation of the control signal GG 2 , the bit line BL 2 is connected to the ground power source line 22 .

Further, in response to the activation of the control signal FG 4 , the bit line BL 4 adjacent to the bit line BL 3 is connected to the bias power source line 26 supplied with the bias potential VddS. Thus, the node ND is charged to the bias potential VddS. Here, the bias power source potential VddS is approximately at the same potential with the read power source potential VddR. For example, when read power source potential VddR is at 3V, then the bias power source potential VddS is also set at 3V.

Thereafter, at time point t 4 , sense operation is initiated in response to the activation of the word line WL 1 from L level to H level. At this time, current does not flow from the node NA via the memory cell 113 .

FIG. 5 is a diagram related to a current sensing operation of the sense amplifier circuit 12 at time point t 4 indicated in FIG. 4 .

Referring to FIGS. 4 and 5, at time point 4 , the N-channel MOS transistors 44 and 84 are already set in a non-conductive state, whereas the N-channel MOS transistors 54 , 62 , and 76 are set in a conductive state. Thus the bit line BL 2 is set to 0V, and the bit line BL 3 is supplied with the read power source potential VddR via the sense amplifier circuit 12 . The bit line BL 4 is supplied with the bias power source potential VddS.

Then, as the word line WL 1 is activated to H level at time point t 4 , sense current I 1 flows through the path indicated in FIG. 5 . Bit lines BL 4 and BL 5 , which are non-selected bit lines, are charged with the charge current I 2 through the path indicated in FIG. 5 . The bias potential VddS is a source of charge current I 2 . Therefore, even when no charges are stored in the memory area of the memory cell 113 , and hence the memory cell 113 is rendered conductive when the word line WL 1 is activated, current does not flow from the node NA to the node ND.

FIG. 6 is a waveform diagram showing time changes of the sense current I 1 shown in FIG. 5 .

Referring to FIGS. 5 and 6, the read current as shown in the graph G 1 flows when data “1” is stored in the area L 1 of the memory cell 112 .

When data “0” is stored in the area L 1 , the memory cell 113 does not pass the current from the node NA to the node ND, thus the read current is stabilized more quickly as indicated by the graph G 0 , than in the case shown in FIG. 17 . According to the non-volatile semiconductor memory device of the first embodiment, reading time can be reduced by the length of waiting time required for the sensing as described with reference to FIG. 17 . Specifically, identification of data stored in the memory cell of the sense amplifier circuit 12 will be possible once the word line WL 1 is activated.

In case of reading the data stored in the other memory area with respect to the same memory cell, reading time may also be reduced using the bias power source potential VddS similarly for charging bit lines. For example, reading of data stored in the memory area L 2 of the memory cell 112 can be achieved by operating the switch unit so as to connect the bit line BL 2 to the read power source potential VddR, connect the bit line BL 3 to the ground potential, and connect the bit line BL 1 to the bias power source potential, respectively.

Similar structures seem be found in a conventional mask ROM or an electrically programmable EPROM. For example, the structure disclosed in FIG. 1 of the Japanese Patent Laying-Open No. 11-306779 is representative.

However, in such prior art, sense voltage is regularly applied in a single direction to the memory cell transistor to be read. Hence, the data detecting circuit (corresponding to the sense amplifier circuit 12 of the present invention) does not have a structure enabling connection to every bit lines.

In contrast thereto, as shown in FIG. 2 of the present invention, any one of the ground power source line 22 , read power source line 24 or bias power source line 26 can be connected to each of the bit lines. As such, it is particularly effective to a memory cell such as an NROM having two memory area per one memory cell transistor. In an NROM, voltage is reversely applied on reading as compared to writing, and hence the structure as shown in FIG. 2 is required.

Additionally, since sensing of data stored in a cell can be made without any delay for every bit lines and the voltage applying circuit connected to each bit line is shared by all of the bit lines, effects on sense operation incurred by the difference in position of the selected memory cell can be reduced.

Second Embodiment

A structure will be described, in which larger number of bit lines are additionally provided, and memory cells are provided corresponding to these bit lines, to the structure as described in the first embodiment referring to FIG. 2. A non-volatile semiconductor memory device of a second embodiment includes a memory cell array 2 A and switch circuit 4 A, respectively replacing the memory cell array 2 and the switch circuit 4 of the non-volatile semiconductor memory device 1 as shown in FIG. 1 .

FIG. 7 is a circuit diagram showing the structure of the memory cell array 2 A and the switch circuit 4 A of the second embodiment.

Referring to FIG. 7, the memory cell array 2 A further includes bit lines BL 6 to BLn, memory cells 116 to 11 n−1 connected to the wordline WL 1 , and memory cells 126 to 12 n−1 connected to the word line WLn, additionally to the structure of the memory cell array 2 as described above referring to FIG. 2 . The memory cell 116 is connected between the bit line BL 6 and the bit line BL 7 . The memory cell 126 is connected between the bit line BL 6 and the bit line BL 7 .

The switch circuit 4 A further includes switch units 36 , 37 , . . . 3 n , respectively corresponding to the bit lines BL 6 , BL 7 , . . . , BLn, additionally to the structure of the switch circuit 4 shown in FIG. 2 .

The switch unit 36 includes an N-channel MOS transistor 232 connected between the bit line BL 6 and the read power source line 24 for receiving at its gate a control signal VG 6 , an N-channel MOS transistor 234 connected between the bit line BL 6 and the ground power source line 22 for receiving at its gate a control signal GG 6 , and an N-channel MOS transistor 236 connected between the bit line BL 6 and the bias power source line 26 for receiving at its gate a control signal FG 6 .

The switch unit 37 includes an N-channel MOS transistor 242 connected between the bit line BL 7 and the read power source line 24 for receiving at its gate a control signal VG 7 , an N-channel MOS transistor 244 connected between the bit line BL 7 and the ground power source line 22 for receiving at its gate a control signal GG 7 , and an N-channel MOS transistor 246 connected between the bit line BL 7 and the bias power source line 26 for receiving at its gate a control signal FG 7 .

The switch unit 3 n includes an N-channel MOS transistor 252 connected between the bit line BLn and the read power source line 24 for receiving at its gate a control signal VGn, an N-channel MOS transistor 254 connected between the bit line BLn and the ground power source line 22 for receiving at its gate a control signal GGn, and an N-channel MOS transistor 256 connected between the bit line BLn and the bias power source line 26 for receiving at its gate a control signal FGn.

The control signals VG 6 to VGn, GG 6 to GGn and FG 6 to FGn are provided from the decoder shown in FIG. 1 .

In the first embodiment, when controlled as shown in FIG. 4, after the activation of the word line WL 1 at time point t 4 , the voltage of the node ND temporarily drops since the node NE is charged. In the structure as shown in FIG. 7, since the parasitic capacity of the nodes NE to NN to be charged is large, the voltage drop of the node ND is larger, or the voltage drop continues for longer period.

When the voltage drop is large, the current flowing from the node NA to the node ND is correspondingly large, and it may affect the sense current.

FIG. 8 is an operational waveform diagram related to the operation of the non-volatile semiconductor memory device of the second embodiment.

Referring to FIGS. 7 and 8, at time period t 1 to t 2 , the bit lines BL 1 to BLn are precharged to 0V in response to the control signal GG 1 to GGn. At time period t 2 to t 3 , the control signals GG 1 to GGn are inactivated, and bit lines BL 1 to BLn are in a floating state precharged to 0V.

At time point t 3 , the control signals FG 4 and FG 5 are activated from L level to H level. In response thereto, the node NE is charged to the bias potential VddS similarly to the node ND, before the activation of the word line WL 1 .

Thus, after time point t 4 , voltage drop of the node ND is alleviated and current is less likely to flow from the node NA to the node ND.

The node of which corresponding control signal FG is not activated at the time point t 3 , for example the node Nn, completes its charging at the time point t 5 . In order to reduce the time required for completing the charging, control signal 6 may also be activated at the time point t 3 . Additionally, further control signals FG 7 , . . . , may also be activated. Thus, as larger number of bit lines are connected to the bias power source line 26 to be charged to the bias potential, the time required for charging can be reduced. It should be noted that it does not contributes to reduction of sensing time.

Increasing the number of bit lines to be charged alleviates the voltage drop of nodes ND and NE. If the control signals FG 4 and FG 5 are activated at time point t 3 to precharge node ND and NE only, then the voltage drop of the nodes ND and NE will be larger, which may adversely affect the sense current. In such a case, increasing the number of bit lines to be charged is effective.

Third Embodiment

FIG. 9 is an operational waveform diagram related to the operation of a non-volatile semiconductor memory device of a third embodiment.

Referring to FIGS. 7 and 9, the present embodiment is different from the second embodiment in that, at time point t 3 control signals FG 4 to FGn are activated to H level and all of the nodes ND to Nn is charged to the sense power source potential. Since undesirable current does not flow after the time point t 4 at which the word line WL 1 is activated, undesirable noise for signal lines and ground lines will not be generated, and thus the stable sensing operation can advantageously be performed.

Additionally, between the non-selected memory cells, current does not pass between source and drain of the memory cell transistor. It effectively reduces possibility of weak writing operation by hot carriers, which in turn may increase the threshold value of the transistor.

In case of reading the data stored in the other memory area with respect to the same memory cell, reading time may also be reduced using the bias power source potential VddS in the similar manner as for charging bit lines. For example, reading of data stored in the memory area L 2 of the memory cell 112 can be achieved by operating the switch unit corresponding to each bit line so as to connect the bit line BL 2 to the read power source potential VddR, connect the bit line BL 3 to the ground potential, and connect the bit line BL 1 to the bias power source potential, respectively.

Additionally, the operation for reading data from a memory cell positioned nearer to the center, for example from the memory cell 114 , is performed as follows. First, when reading data stored in the memory area L 1 , the switch unit corresponding to each bit line should be operated so as to connect the bit line BL 5 to the read power source potential VddR, connect the bit line BL 4 to the ground potential, and connect bit lines BL 6 to BLn to the bias power source potential. When reading data stored in the memory area L 2 of the memory cell 114 , the switch unit corresponding to each bit line should be operated so as to connect the bit line BL 4 to the read power source potential VddR, connect the bit line BL 5 to the ground potential and connect the bit lines BL 3 to BL 1 to the bias power source potential.

Although the present invention has been described and illustrated in detail, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation, the spirit and scope of the present invention being limited only by the terms of the appended claims.