Inventor
Tsukasa Ooishi
Inventor
Hyogo, JP
Overview
Patents· 294 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores69%
H03KPulse technique7%
H10BElectronic memory devices6%
H03LAutomatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses3%
G06FElectric digital data processing3%
G05FSystems for regulating electric or magnetic variables2%
B82YSpecific uses or applications of nanostructures2%
H10DInorganic electric semiconductor devices2%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h101%
H04LTransmission of digital information, e.g. telegraphic communication1%
PatentTitleYear
7,719,814'Semiconductor device with surge protection circuit'20107,672,173'Non-volatile semiconductor memory device and semiconductor memory device'20107,552,378'Semiconductor device improving error correction processing rate'20097,394,685'Nonvolatile memory device with write error suppressed in reading data'20087,336,529'Thin film magnetic memory device storing program information efficiently and stably'20087,313,017'Thin film magnetic memory device conducting read operation by a self-reference method'20077,313,014'Thin film magnetic memory device and semiconductor integrated circuit device including the same as one of circuit blocks'20077,295,465'Thin film magnetic memory device reducing a charging time of a data line in a data read operation'20077,286,394'Non-volatile semiconductor memory device allowing concurrent data writing and data reading'20077,286,416'Non-volatile semiconductor memory device and semiconductor memory device'20077,277,330'Nonvolatile semiconductor memory device having improved redundancy relieving rate'20077,272,064'Thin film magnetic memory device for writing data of a plurality of bits in parallel'20077,256,644'Semiconductor circuit device having hierarchical power supply structure'20077,233,537'Thin film magnetic memory device provided with a dummy cell for data read reference'20077,208,751'Non-volatile semiconductor memory device allowing shrinking of memory cell'20077,173,857'Nonvolatile semiconductor memory device capable of uniformly inputting/outputting data'20077,170,776'Non-volatile memory device conducting comparison operation'20077,110,290'Thin film magnetic memory device storing program information efficiently and stably'20067,099,229'Nonvolatile memory device having circuit for stably supplying desired current during data writing'20067,072,207'Thin film magnetic memory device for writing data of a plurality of bits in parallel'20067,061,800'Nonvolatile semiconductor memory device having improved redundancy relieving rate'20067,057,925'Thin film magnetic memory device conducting read operation by a self-reference method'20067,032,122'Data transfer system capable of transferring data at high transfer speed'20067,015,059'Thin film magnetic memory device and manufacturing method therefor'20066,999,342'Semiconductor device saving data in non-volatile manner during standby'20066,999,341'Thin-film magnetic memory device with memory cells having magnetic tunnel junction'20066,992,935'Nonvolatile memory device efficiently changing functions of field programmable gate array at high speed'20066,992,946'Semiconductor device with reduced current consumption in standby state'20066,958,928'Thin film magnetic memory device with memory cell having magnetic tunnel junction'20056,940,777'Semiconductor device and semiconductor memory device provided with internal current setting adjustment circuit'20056,940,767'Semiconductor memory device having a plurality of signal lines for writing and reading data'20056,928,015'Thin film magnetic memory device and semiconductor integrated circuit device including the same as one of circuit blocks'20056,928,010'Semiconductor integrated circuit device capable of tuning of internal power supply voltages generated by a plurality of internal power generating circuits'20056,922,359'Nonvolatile semiconductor memory device allowing high speed data transfer'20056,917,540'Thin film magnetic memory device storing program information efficiently and stably'20056,914,845'Semiconductor device saving data in non-volatile manner during standby'20056,901,025'Nonvolatile semiconductor memory device which can be programmed at high transfer speed'20056,885,235'Semiconductor integrated circuit device with internal power supply potential generation circuit'20056,879,513'Current drive circuit avoiding effect of voltage drop caused by load and semiconductor memory device equipped therewith'20056,873,561'Semiconductor memory device operating with low current consumption'20056,868,031'Nonvolatile memory device having circuit for stably supplying desired current during data writing'20056,868,029'Semiconductor device with reduced current consumption in standby state'20056,868,004'Thin film magnetic memory device suppressing resistance of transistors present in current path'20056,862,209'Thin film magnetic memory device with magnetic tunnel junction'20056,859,403'Semiconductor memory device capable of overcoming refresh disturb'20056,856,565'Thin film magnetic memory device conducting read operation by a self-reference method'20056,857,093'Semiconductor integrated circuit device capable of self-testing internal power supply currents provided to internal circuits integrated on chip'20056,856,537'Thin film magnetic memory device having dummy cell'20056,856,550'Nonvolatile semiconductor memory device capable of uniformly inputting/outputting data'20056,849,888'Semiconductor memory device, nonvolatile memory device and magnetic memory device provided with memory elements and interconnections'20056,845,477'Semiconductor test device for conducting an operation test in parallel on many chips in a wafer test and semiconductor test method'20056,845,035'Semiconductor memory device'20056,842,366'Thin film magnetic memory device executing self-reference type data read'20056,839,272'Thin film magnetic memory device conducting read operation and write operation in parallel'20056,831,502'Internal power-source potential supply circuit, step-up potential generating system, output potential supply circuit, and semiconductor memory'20046,829,173'Semiconductor memory device capable of accurately writing data'20046,829,171'Memory device trapping charges in insulating film to store information in non-volatile manner'20046,815,785'Thin film magnetic memory device and manufacturing method therefor'20046,812,532'Semiconductor device with address programming circuit'20046,809,976'Non-volatile semiconductor memory device conducting read operation using a reference cell'20046,809,969'Non-volatile semiconductor memory device capable of rapid operation'20046,806,524'Thin film magnetic memory device'20046,807,101'Semiconductor memory device'20046,804,158'Semiconductor circuit device with improved special mode'20046,795,345'Non-volatile semiconductor memory device having an increased access speed while maintaining the production yield'20046,795,355'Semiconductor integrated circuit device with internal potential generating circuit allowing external tuning of internal power supply potential'20046,795,339'Thin film magnetic memory device having communication function, and distribution management system and manufacturing step management system each using thereof'20046,794,904'Semiconductor integrated circuit device including logic gate that attains reduction of power consumption and high-speed operation'20046,791,890'Semiconductor memory device reading data based on memory cell passing current during access'20046,791,869'Nonvolatile memory device with configuration switching the number of memory cells used for one-bit data storage'20046,788,569'Thin film magnetic memory device reducing a charging time of a data line in a data read operation'20046,788,571'Thin film magnetic memory device having an access element shared by a plurality of memory cells'20046,778,445'Pipeline nonvolatile memory device with multi-bit parallel read and write suitable for cache memory.'20046,768,696'Semiconductor memory device in which data are read and written asynchronously with application of address signal'20046,762,953'Nonvolatile memory device with sense amplifier securing reading margin'20046,757,191'Thin film magnetic memory device sharing an access element by a plurality of memory cells'20046,754,127'Semiconductor integrated circuit device having internal synchronizing circuit responsive to test mode signal'20046,744,672'Non-volatile semiconductor memory device capable of high-speed data reading'20046,738,285'Thin film magnetic memory device with high-accuracy data read structure having a reduced number of circuit elements'20046,731,535'Nonvolatile semiconductor memory device'20046,728,134'Nonvolatile semiconductor memory device having control circuit'20046,728,122'Semiconductor memory device capable of rewriting data signal'20046,724,686'Operable synchronous semiconductor memory device switching between single data rate mode and double data rate mode'20046,717,881'Semiconductor memory device having potential control circuit'20046,714,451'Semiconductor memory device including bit select circuit'20046,714,443'Thin film magnetic memory device for writing data of a plurality of bits in parallel'20046,690,241'Ring oscillator having variable capacitance circuits for frequency adjustment'20046,668,345'Synchronous semiconductor allowing replacement with redundant memory cell while maintaining access time'20036,646,907'Semiconductor memory device'20036,646,946'Fast accessible semiconductor memory device'20036,643,581'Navigation system for transmitting real-time information allowing instant judgement of next action'20036,636,110'Internal clock generating circuit for clock synchronous semiconductor memory device'20036,621,306'Random logic circuit'20036,618,317'Write system architecture of magnetic memory array divided into a plurality of memory blocks'20036,618,319'Synchronous semiconductor memory device allowing control of operation mode in accordance with operation conditions of a system'20036,618,286'Non-volatile semiconductor memory device with a memory array preventing generation of a through current path'20036,608,772'Low-power semiconductor memory device'20036,606,274'Semiconductor memory device having function of supplying stable power supply voltage'20036,603,685'Semiconductor integrated circuit device capable of ensuring reliability of transistor driving high voltage'20036,603,217'Semiconductor circuit device having hierarchical power supply structure'20036,601,141'Semiconductor memory device having cache function'20036,597,617'Semiconductor device with reduced current consumption in standby state'20036,597,601'Thin film magnetic memory device conducting data read operation without using a reference cell'20036,597,236'Potential detecting circuit for determining whether a detected potential has reached a prescribed level'20036,587,385'Clock synchronous semiconductor memory device having a reduced access time'20036,587,392'Fast accessible dynamic type semiconductor memory device'20036,584,005'Semiconductor memory device preventing erroneous writing in write operation and delay in read operation'20036,574,161'Semiconductor integrated circuit device having a hierarchical power source configuration'20036,567,324'Semiconductor memory device with reduced number of redundant program sets'20036,549,445'Semiconductor memory device including plurality of global data lines in parallel arrangement with low parasitic capacitance, and fabrication method thereof'20036,546,503'Synchronous semiconductor memory device capable of reducing test cost and method of testing the same'20036,545,926'Antifuse address detecting circuit programmable by applying a high voltage and semiconductor integrated circuit device provided with the same'20036,535,433'Semiconductor logic circuit device of low current consumption'20036,532,183'Semiconductor device capable of adjusting internal potential'20036,525,578'Phase-lock loop with independent phase and frequency adjustments'20036,522,599'Operable synchronous semiconductor memory device switching between single data rate mode and double data rate mode'20036,522,598'Synchronous semiconductor memory device having improved operational frequency margin at data input/output'20036,519,192'Semiconductor memory device having a large band width and allowing efficient execution of redundant repair'20036,514,834'Method of manufacturing a semiconductor device having a low leakage current'20036,502,145'Semiconductor memory with application of predetermined power line potentials'20026,483,165'Semiconductor integrated circuit device including logic gate that attains reduction of power consumption and high-speed operation'20026,480,946'Memory system for synchronized and high speed data transfer'20026,480,437'Semiconductor memory device permitting improved integration density and reduced accessing time'20026,477,075'Memory circuit/logic circuit integrated device capable of reducing term of works'20026,473,360'Synchronous semiconductor memory device capable of high speed reading and writing'20026,469,327'Semiconductor device with efficiently arranged pads'20026,470,467'Synchronous semiconductor memory device capable of performing operation test at high speed while reducing burden on tester'20026,466,509'Semiconductor memory device having a column select line transmitting a column select signal'20026,462,996'Semiconductor integrated circuit device having internal synchronizing circuit responsive to test mode signal'20026,448,826'Semiconductor device incorporating circuit for generating control clock in accordance with external clock frequency'20026,449,182'Low-power semiconductor memory device'20026,441,669'Internal power-source potential supply circuit, step-up potential generating system, output potential supply circuit, and semiconductor memory'20026,442,095'Semiconductor memory device with normal mode and power down mode'20026,438,066'Synchronous semiconductor memory device allowing control of operation mode in accordance with operation conditions of a system'20026,438,064'Semiconductor memory device capable of efficient memory cell select operation with reduced element count'20026,434,075'Semiconductor circuit device with reduced power consumption in slow operation mode'20026,433,586'Semiconductor logic circuit device of low current consumption'20026,429,495'Semiconductor device with address programming circuit'20026,424,585'Semiconductor memory device with a voltage down converter stably generating an internal down-converted voltage'20026,424,582'Semiconductor memory device having redundancy'20026,421,789'Synchronous semiconductor memory device capable of reducing test cost and method of testing the same'20026,421,286'Semiconductor integrated circuit device capable of self-analyzing redundancy replacement adapting to capacities of plural memory circuits integrated therein'20026,414,894'Semiconductor device with reduced current consumption in standby state'20026,414,535'Semiconductor device realizing internal operational factor corresponding to an external operational factor stably regardless of fluctuation of external operational factor'20026,414,883'Semiconductor memory device'20026,411,560'Semiconductor memory device capable of reducing leakage current flowing into substrate'20026,411,149'Semiconductor integrated circuit device operable with low power consumption at low power supply voltage'20026,407,956'Semiconductor memory device'20026,407,950'SEMICONDUCTOR MEMORY DEVICE CAPABLE OF IMPLEMENTING REDUNDANCY-BASED REPAIR EFFICIENTLY IN RELATION TO LAYOUT AND OPERATING SPEED AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING SUCH SEMICONDUCTOR MEMORY DEVICE'20026,407,958'Semiconductor integrated circuit device with split hierarchical power supply structure'20026,404,258'Delay circuit having low operating environment dependency'20026,400,632'Semiconductor device including a fuse circuit in which the electric current is cut off after blowing so as to prevent voltage fall'20026,396,768'Synchronous semiconductor memory device allowing easy and fast test'20026,385,124'Semiconductor device including a memory cell array'20026,384,674'Semiconductor device having hierarchical power supply line structure improved in operating speed'20026,385,125'Synchronous semiconductor integrated circuit device capable of test time reduction'20026,381,191'Fast accessible dynamic type semiconductor memory device'20026,381,167'Semiconductor memory device including plurality of global data lines in parallel arrangement with low parasitic capacitance, and fabrication method thereof'20026,373,315'Signal potential conversion circuit'20026,363,030'Synchronous semiconductor memory device capable for more reliable communication of control signal and data'20026,351,178'Reference potential generating circuit'20026,351,423'Semiconductor memory device including sense amplifier circuit differing in drivability between data write mode and data read mode'20026,349,065'Semiconductor memory device allowing acceleration testing, and a semi-finished product for an integrated semiconductor device that allows acceleration testing'20026,337,589'Phase-lock loop with independent phase and frequency adjustments'20026,337,828'Semiconductor memory device having function of supplying stable power supply voltage'20026,337,583'Random logic circuit'20026,337,832'Operable synchronous semiconductor memory device switching between single data rate mode and double data rate mode'20026,335,875'Memory circuit/logic circuit integrated device capable of reducing term of works'20026,333,884'Semiconductor memory device permitting improved integration density and reduced accessing time'20016,333,878'Semiconductor memory device having program circuit'20016,331,956'Synchronous semiconductor memory device having redundant circuit of high repair efficiency and allowing high speed access'20016,331,719'Semiconductor device for reducing effects of noise on an internal circuit'20016,330,202'Semiconductor memory device having write data line'20016,330,200'Synchronous semiconductor memory device having improved operational frequency margin at data input/output'20016,327,213'Semiconductor integrated circuit device having a hierarchical power source configuration'20016,327,195'Boosted-voltage drive circuit operable with high reliability and semiconductor memory device employing the same'20016,324,118'Synchronous semiconductor memory device having improved operational frequency margin at data input/output'20016,314,042'Fast accessible semiconductor memory device'20016,313,695'Semiconductor circuit device having hierarchical power supply structure'20016,310,807'Semiconductor integrated circuit device including tester circuit for defective memory cell replacement'20016,307,804'Semiconductor memory device capable of efficient memory cell select operation with reduced element count'20016,304,501'Semiconductor memory device having a large band width and allowing efficient execution of redundant repair'20016,301,187'Synchronous type semiconductor memory device permitting reduction in ratio of area occupied by control circuit in chip area'20016,301,191'Semiconductor memory device allowing reduction in power consumption during standby'20016,301,166'Parallel tester capable of high speed plural parallel test'20016,291,869'Semiconductor circuit device having hierarchical power supply structure'20016,292,413'Semiconductor device, semiconductor memory device and semiconductor integrated circuit device'20016,292,015'Semiconductor integrated circuit device including logic gate that attains reduction of power consumption and high-speed operation'20016,271,710'Temperature dependent circuit, and current generating circuit, inverter and oscillation circuit using the same'20016,272,056'Semiconductor memory device capable of implementing redundancy-based repair efficiently in relation to layout and operating speed and semiconductor integrated circuit device having such semiconductor memory device'20016,272,066'Synchronous semiconductor memory device capable of high speed reading and writing'20016,272,055'Semiconductor memory device'20016,259,647'Synchronous semiconductor memory device allowing easy and fast test'20016,256,246'Semiconductor memory device'20016,256,707'Semiconductor memory device having cache function'20016,246,614'Clock synchronous semiconductor memory device having a reduced access time'20016,236,613'Semiconductor integrated circuit device having a hierarchical power source configuration'20016,229,383'Internal power-source potential supply circuit, step-up potential generating system, output potential supply circuit, and semiconductor memory'20016,222,790'Semiconductor memory device in which data are read and written asynchronously with application of address signal'20016,208,547'Memory circuit/logic circuit integrated device capable of reducing term of works'20016,205,071'Semiconductor memory device including sense amplifier circuit differing in drivability between data write mode and data read mode'20016,205,064'Semiconductor memory device having program circuit'20016,201,754'Semiconductor memory device having function of supplying stable power supply voltage'20016,197,643'Method for making level converting circuit, internal potential generating circuit and internal potential generating unit'20016,198,679'Semiconductor memory device'20016,191,994'Semiconductor device'20016,188,637'Semiconductor memory device allowing reduction in power consumption during standby'20016,178,122'Boosted-voltage drive circuit operable with high reliability and semiconductor memory device employing the same'20016,178,123'Semiconductor device with circuit for phasing internal clock signal'20016,175,532'Fast accessible dynamic type semiconductor memory device'20016,172,928'Semiconductor memory device with normal mode and power down mode'20016,172,916'Semiconductor memory device having a large band width and allowing efficient execution of redundant repair'20016,166,990'Clock reproduction circuit that can reproduce internal clock signal correctly in synchronization with external clock signal'20006,157,586'Memory device having potential control for increasing the operating margin at the start of a sensing cycle'20006,147,925'Semiconductor device allowing fast sensing with a low power supply voltage'20006,147,927'Synchronous semiconductor memory device capable of more reliable communication of control signal and data'20006,134,179'Synchronous semiconductor memory device capable of high speed reading and writing'20006,134,611'System for interface circuit to control multiplexer to transfer data to one of two internal devices and transferring data between internal devices without multiplexer'20006,125,078'Synchronous semiconductor memory device allowing control of operation mode in accordance with operation conditions of a system'20006,122,190'Semiconductor memory device capable of high speed plural parallel test'20006,111,807'Synchronous semiconductor memory device allowing easy and fast text'20006,107,700'Semiconductor device of hierarchical power source structure'20006,104,648'Semiconductor memory device having a large band width and allowing efficient execution of redundant repair'20006,091,268'Potential detecting circuit and semiconductor integrated circuit'20006,091,656'Semiconductor integrated circuit device having a hierarchical power source configuration'20006,084,818'Semiconductor memory device capable of efficient memory cell select operation with reduced element count'20006,075,732'Semiconductor memory device with redundancy circuit'20006,072,345'Semiconductor device realizing internal operational factor corresponding to an external operational factor stably regardless of fluctuation of the external operational factor'20006,072,742'Semiconductor memory device with a voltage down converter stably generating an internal down-converted voltage'20006,067,260'Synchronous semiconductor memory device having redundant circuit of high repair efficiency and allowing high speed access'20006,058,061'Semiconductor circuit device with reduced power consumption in slow operation mode.'20006,058,053'Semiconductor memory device capable of high speed operation and including redundant cells'20006,055,206'Synchronous semiconductor memory device capable of reducing power dissipation by suppressing leakage current during stand-by and in active operation'20006,054,885'Semiconductor device and testing apparatus thereof'20006,031,781'Semiconductor memory device allowing high-speed activation of internal circuit'20006,028,361'Method of manufacturing of semiconductor device having low leakage current'20006,028,810'Fast accessible dynamic type semiconductor memory device'20006,014,410'Transmission-reception system which transmits and receives data via signal transmission line'20006,011,735'Synchronous semiconductor memory device with redundancy determination unit that can set replacement of redundant memory array provided in row and column directions'20006,005,434'Substrate potential generation circuit that can suppress variation of output voltage with respect to change in external power supply voltage and environment temperature'19995,995,441'Synchronous semiconductor memory device capable of rapidly, highly precisely matching internal clock phase to external clock phase'19995,982,678'Semiconductor memory device with redundancy circuit'19995,969,984'Level converting circuit for converting level of an input signal, internal potential generating circuit for generating internal potential, internal potential generating unit generating internal potential, highly reliable semiconductor device'19995,953,271'Semiconductor memory device allowing acceleration testing, and a semi-finished product for an integrated semiconductor device that allows acceleration testing'19995,953,261'Semiconductor memory device having data input/output circuit of small occupied area capable of high-speed data input/output'19995,943,681'Semiconductor memory device having cache function'19995,943,273'Semiconductor memory device'19995,936,443'Power-on reset signal generator for semiconductor device'19995,898,316'Mode setting circuit of semiconductor device'19995,894,440'Semiconductor memory device and data transferring structure and method therein'19995,886,946'Semiconductor memory device allowing reduction in power consumption during standby'19995,881,014'Semiconductor memory device with a voltage down converter stably generating an internal down-converter voltage'1999RE036089'Column selecting circuit in semiconductor memory device'19995,862,096'Semiconductor memory device having optimally arranged internal down-converting circuitry'19995,847,597'Potential detecting circuit for determining whether a detected potential has reached a prescribed level, and a semiconductor integrated circuit including the same'19985,847,595'Semiconductor device having controllable internal potential generating circuit'19985,844,767'Level converting circuit for converting level of an input signal, internal potential generating circuit for generating internal potential, internal potential generating unit generating internal potential highly reliable semiconductor device and method of'19985,844,262'Semiconductor device for reducing effects of noise on an internal circuit'19985,841,729'Semiconductor memory device in which data are read and written asynchronously with application of address signal'19985,835,436'Dynamic type semiconductor memory device capable of transferring data between array blocks at high speed'19985,835,966'Semiconductor memory device and memory access system using a four-state address signal'19985,828,258'Semiconductor device and testing apparatus thereof'19985,801,576'Semiconductor integrated circuit device having a hierarchical power source configuration'19985,793,686'Semiconductor memory device having data input/output circuit of small occupied area capable of high-speed data input/output'19985,783,956'Semiconductor device realizing internal operation factor corresponding to an external operational factor stably regardless of fluctuation of the external operational factor'19985,760,614'Potential detecting circuit and semiconductor integrated circuit'19985,757,175'Constant current generating circuit'19985,751,651'Semiconductor integrated circuit device having a hierarchical power source configuration'19985,751,627'Memory cell that can store data nonvolatily using a ferroelectric capacitor, and a semiconductor memory device including such a memory cell'19985,723,885'Semiconductor device including a ferroelectric film and control method thereof'19985,717,652'Semiconductor memory device capable of high speed plural parallel test, method of data writing therefor and parallel tester'19985,710,737'Semiconductor memory device'19985,706,233'Semiconductor memory device allowing acceleration testing, and a semi-finished product for an integrated semiconductor device that allows acceleration testing'19985,691,954'Semiconductor memory device in which data are read and written asynchronously with application of address signal'19975,689,460'Semiconductor memory device with a voltage down converter stably generating an internal down-converted voltage'19975,687,123'Semiconductor memory device'19975,656,853'Semiconductor device and manufacturing method thereof'19975,644,250'Structure for externally identifying an internal state of a semiconductor device'19975,537,361'Semiconductor memory device and memory access system using a four-state address signal'19965,517,459'Semiconductor memory device in which data are read and written asynchronously with application of address signal'19965,504,713'Semiconductor memory device with redundancy circuit'19965,477,498'Semiconductor memory device'19955,412,605'Semiconductor memory device'19955,355,348'Semiconductor memory device and memory access system using a four-state address signal'19945,315,548'Column selecting circuit in semiconductor memory device'19945,289,417'Semiconductor memory device with redundancy circuit'19945,267,214'Shared-sense amplifier control signal generating circuit in dynamic type semiconductor memory device and operating method therefor'19935,249,155'Semiconductor device incorporating internal voltage down converting circuit'19935,185,744'Semiconductor memory device with test circuit'19935,184,327'Semiconductor memory device having on-chip test circuit and method for testing the same'19935,088,063'Semiconductor memory device having on-chip test circuit'19925,060,230'On chip semiconductor memory arbitrary pattern, parallel test apparatus and method'19915,022,007'Test signal generator for semiconductor integrated circuit memory and testing method thereof'19914,977,542'Dynamic semiconductor memory device of a twisted bit line system having improved reliability of readout'1990Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1990–2004Patents assigned to MITSUBISHI ELECTRIC CORP (204)· patent assignee history
1990–2009Based in Hyogo, JP· patent location history
1998–2010Based in Tokyo, JP· patent location history
1999Based in Itami, JP· patent location history
2000–2003Patents assigned to TEXAS INSTRUMENTS INC (4)· patent assignee history
2001–2007Patents assigned to MITSUBISHI ELECTRIC ENG (18)· patent assignee history
2003–2010Patents assigned to RENESAS TECH CORP (81)· patent assignee history
2007–2010Patents assigned to HITACHI ULSI SYS CO LTD (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MITSUBISHI ELECTRIC CORP | 204 | 1990–2004 |
| RENESAS TECH CORP | 81 | 2003–2010 |
| MITSUBISHI ELECTRIC ENG | 18 | 2001–2007 |
| TEXAS INSTRUMENTS INC | 4 | 2000–2003 |
| HITACHI ULSI SYS CO LTD | 2 | 2007–2010 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hyogo, JP | 275 | 1990–2009 |
| Tokyo, JP | 18 | 1998–2010 |
| Itami, JP | 1 | 1999 |