Inventor

Jun Ohtani

Inventor
Hyogo, JP

Overview

24→
Patents
1996–2007
Patent span
Physics
Primary field (CPC G)

Patents· 24 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores92%
G06FElectric digital data processing4%
H10DInorganic electric semiconductor devices4%
PatentTitleYear
7,173,857'Nonvolatile semiconductor memory device capable of uniformly inputting/outputting data'20076,895,537'Semiconductor integrated circuit device including semiconductor memory with tester circuit capable of analyzing redundancy repair'20056,891,760'Method of erasing information in non-volatile semiconductor memory device'20056,888,775'Semiconductor memory device for improvement of defective data line relief rate'20056,856,550'Nonvolatile semiconductor memory device capable of uniformly inputting/outputting data'20056,813,188'Non-volatile semiconductor memory device having a memory cell which stably retains information'20046,809,969'Non-volatile semiconductor memory device capable of rapid operation'20046,807,101'Semiconductor memory device'20046,778,432'Thin film magnetic memory device capable of stably writing/reading data and method of fabricating the same'20046,765,832'Semiconductor memory device with word line shift configuration'20046,744,672'Non-volatile semiconductor memory device capable of high-speed data reading'20046,717,844'Semiconductor memory device with latch circuit and two magneto-resistance elements'20046,671,213'Thin film magnetic memory device having redundancy repair function'20036,625,072'Semiconductor integrated circuit device provided with a self-testing circuit for carrying out an analysis for repair by using a redundant memory cell'20036,584,005'Semiconductor memory device preventing erroneous writing in write operation and delay in read operation'20036,545,921'Semiconductor memory device allowing spare memory cell to be tested efficiently'20036,535,993'Testing apparatus for semiconductor memory device'20036,421,286'Semiconductor integrated circuit device capable of self-analyzing redundancy replacement adapting to capacities of plural memory circuits integrated therein'20026,297,997'Semiconductor device capable of reducing cost of analysis for finding replacement address in memory array'20016,157,973'Microcomputer having memory and processor formed on the same chip to increase the rate of information transfer'20006,130,852'Memory integrated circuit device including a memory having a configuration suitable for mixture with logic'20005,835,448'Clock synchronous semiconductor memory device for determining an operation mode'19985,708,622'Clock synchronous semiconductor memory device'19985,521,878'Clock synchronous semiconductor memory device'1996

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1996–2003Patents assigned to MITSUBISHI ELECTRIC CORP (11)· patent assignee history
1996–2007Based in Hyogo, JP· patent location history
2003–2007Patents assigned to RENESAS TECH CORP (13)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
RENESAS TECH CORP132003–2007
MITSUBISHI ELECTRIC CORP111996–2003
Locations
LocationPatentsSpan
Hyogo, JP241996–2007