LexDanaLexDanabeta
Inventor

Masaki Ueno

Inventor
Itami, JP

Overview

195→
Patents
2000–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 195 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

B82Yprimary
B82YSpecific uses or applications of nanostructures12%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light11%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
F02DControlling combustion engines9%
H10HInorganic light-emitting semiconductor devices having potential barriers9%
Y02TClimate change mitigation technologies related to transportation9%
C30BSingle-crystal growth5%
H10DInorganic electric semiconductor devices5%
F01NGas-flow silencers or exhaust apparatus for machines or engines in general4%
H01LSemiconductor devices4%
PatentTitleYear
10,690,065Control device of vehicle202010,619,581Control device of internal-combustion engine202010,580,869Stacked body including graphene film and electronic device including graphene film202010,550,778Control device for internal combustion engine202010,539,607Evaluation apparatus including a plurality of insulating portions surrounding a probe and semiconductor device evaluation method based thereon202010,529,807Stacked body and electronic device202010,436,154Control device of internal-combustion engine201910,436,833Evaluation apparatus and evaluation method201910,364,786Controller and internal combustion engine system201910,302,009Control device, internal combustion engine system, and method201910,283,594SiC structure, semiconductor device having SiC structure, and process of forming the same201910,233,848Control apparatus for internal combustion engine201910,217,823Semiconductor device201910,174,671Control device, method, and internal combusion engine201910,145,329Control system for internal combustion engine201810,113,490Control apparatus for internal combustion engine201810,083,831Substrate and electronic device201810,001,071Control system and control method for internal combustion engine20189,846,447Hollow operating lever and method for manufacturing same20179,825,134'Layered semiconductor having base layer including GaN substrate'20179,806,156'Laminated body and electronic device'20179,611,812'Valve reference position-learning device for internal combustion engine'20179,599,536'Pumping loss calculation device for internal combustion engine'20179,472,629'Gallium nitride semiconductor substrate with semiconductor film formed therein'20169,421,594'Method for manufacturing curved hollow pipe'20169,379,523'Group III nitride semiconductor device, p-type contact structure, and method for fabricating group III nitride semiconductor device'20169,305,776'Oxygen-doped gallium nitride crystal substrate'20169,284,897'Intake control system for internal combustion engine'20169,273,616'Intake control system for internal combustion engine'20169,231,370'Group III nitride semiconductor light emitting device'20169,231,058'Gallium nitride semiconductor substrate with semiconductor film formed therein'20169,127,614'Torque-calculating control system for an internal combustion engine'20158,981,428'Semiconductor device including GaN-based compound semiconductor stacked layer and method for producing the same'20158,969,920'Vertical GaN-based semiconductor device'20158,953,656'III-nitride semiconductor laser device and method for fabricating III-nitride semiconductor laser device'20158,946,774'Gallium nitride semiconductor substrate'20158,933,538'Oxygen-doped gallium nitride single crystal substrate'20158,927,962'Group III nitride semiconductor optical device'20158,929,416'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20158,920,565'Metalorganic chemical vapor deposition reactor'20148,923,354'Nitride semiconductor laser, epitaxial substrate'20148,917,750'III-nitride semiconductor laser diode'20148,908,732'Group-III nitride semiconductor laser device'20148,906,162'Metal organic chemical vapor deposition equipment'20148,884,306'Semiconductor device and method for manufacturing the same'20148,829,545'Group III nitride semiconductor light-emitting device'20148,815,621'Method of forming p-type gallium nitride based semiconductor, method of forming nitride semiconductor device, and method of forming epitaxial wafer'20148,803,274'Nitride-based semiconductor light-emitting element'20148,772,064'Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device'20148,752,850'Arm component for vehicles and its manufacturing method'20148,748,868'Nitride semiconductor light emitting device and epitaxial substrate'20148,741,674'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20148,731,016'Nitride semiconductor light emitting device'20148,718,110'Nitride semiconductor laser and epitaxial substrate'20148,693,515'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20148,653,621'Nitride-based semiconductor light-emitting element'20148,633,093'Oxygen doping method to gallium nitride single crystal substrate'20148,628,616'Vapor-phase process apparatus, vapor-phase process method, and substrate'20148,619,828'Group III nitride semiconductor laser diode'20138,594,145'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20138,548,021'III-nitride semiconductor laser, and method for fabricating III-nitride semiconductor laser'20138,546,163'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20138,548,020'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20138,541,253'III-nitride semiconductor laser device, and method of fabricating the III-nitride semiconductor laser device'20138,513,645'Gallium nitride-based epitaxial wafer and method of producing gallium nitride-based semiconductor light-emitting device'20138,513,684'Nitride semiconductor light emitting device'20138,507,305'Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and epitaxial substrate'20138,487,327'Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor device'20138,488,642'Gallium nitride based semiconductor light-emitting device and method for fabricating the same, gallium nitride based light-emitting diode, epitaxial wafer, and method for fabricating gallium nitride light-emitting diode'20138,483,251'Group III nitride semiconductor laser diode, and method for producing group III nitride semiconductor laser diode'20138,476,615'GaN-based semiconductor light emitting device and the method for making the same'20138,477,818'Gallium nitride-based semiconductor laser device, and method for fabricating gallium nitride-based semiconductor laser device'20138,445,925'Semiconductor optical device'20138,441,034'Gallium nitride semiconductor substrate with semiconductor film formed therein'20138,420,419'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20138,415,707'Group III nitride semiconductor device'20138,405,066'Nitride-based semiconductor light-emitting device'20138,401,048'Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device'20138,391,327'Group III nitride semiconductor element and epitaxial wafer'20138,389,312'Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device'20138,361,885'Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and method of estimating damage from formation of scribe groove'20138,357,558'Method of making semiconductor light-emitting device'20138,357,946'Nitride semiconductor light emitting device, epitaxial substrate, and method for fabricating nitride semiconductor light emitting device'20138,349,403'Vapor-phase process apparatus, vapor-phase process method, and substrate'20138,349,083'Vapor-phase process apparatus, vapor-phase process method, and substrate'20138,304,793'III-nitride semiconductor optical device and epitaxial substrate'20128,304,269'Method of fabricating group III nitride semiconductor device'20128,306,082'Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device'20128,295,317'Method of making nitride semiconductor laser, method of making epitaxial wafer, and nitride semiconductor laser'20128,284,811'Gallium nitride-based semiconductor laser diode'20128,265,113'Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device'20128,227,277'Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device'20128,228,963'Gallium nitride-based semiconductor optical device, method of fabricating gallium nitride-based semiconductor optical device, and epitaxial wafer'20128,213,475'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20128,207,544'Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor device'20128,207,556'Group III nitride semiconductor device and epitaxial substrate'20128,183,071'Method for producing nitride semiconductor optical device and epitaxial wafer'20128,183,596'High electron mobility transistor, epitaxial wafer, and method of fabricating high electron mobility transistor'20128,175,129'Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and method of estimating damage from formation of scribe groove'20128,173,458'Method for forming quantum well structure and method for manufacturing semiconductor light emitting element'20128,174,035'Nitride-based semiconductor light emitting device'20128,168,516'Method of fabricating single crystal gallium nitride semiconductor substrate, nitride gallium semiconductor substrate and nitride semiconductor epitaxial substrate'20128,153,454'Fabrication apparatus and fabrication method of semiconductor device produced by heating substrate'20128,148,716'Group III nitride semiconductor optical device, epitaxial substrate, and method of making group III nitride semiconductor light-emitting device'20128,139,619'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20128,124,430'Method for forming quantum well structure and method for manufacturing semiconductor light emitting element'20128,105,857'Method of fabricating group-III nitride semiconductor laser device'20128,107,507'Group III nitride semiconductor element and epitaxial wafer'20128,076,167'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20118,071,405'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20118,067,257'Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device'20118,053,806'Group III nitride semiconductor device and epitaxial substrate'20118,048,702'Method of fabricating nitride-based semiconductor optical device'20118,018,029'Gallium nitride-based epitaxial wafer and method of fabricating epitaxial wafer'20118,002,892'Group III nitride crystal substrate, method of its manufacture, and group III nitride semiconductor device'20117,955,881'Method of fabricating quantum well structure'20117,933,303'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20117,919,831'Nitride semiconductor device having oxygen-doped N-type gallium nitride freestanding single crystal substrate'20117,887,123'Front body structure of automotive vehicle'20117,883,996'Method of fabricating single crystal gallium nitride semiconductor substrate, nitride gallium semiconductor substrate and nitride semiconductor epitaxial substrate'20117,883,915'Method of making nitride semiconductor laser, method of making epitaxial wafer, and nitride semiconductor laser'20117,879,636'Method of forming p-type gallium nitride based semiconductor, method of forming nitride semiconductor device, and method of forming epitaxial wafer'20117,873,088'Group III nitride semiconductor element and epitaxial wafer'20117,858,963'Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device'20107,851,243'Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device'20107,851,821'Group III nitride semiconductor device, epitaxial substrate, and method of fabricating group III nitride semiconductor device'20107,781,314'Nitride semiconductor device manufacturing method'20107,755,103'Nitride gallium semiconductor substrate and nitride semiconductor epitaxial substrate'20107,667,298'Oxygen-doped n-type gallium nitride freestanding single crystal substrate'20107,624,993'Dual-membered suctional gasket'20097,543,571'Fuel pump mounting structural body'20097,478,533'Engine system with a supercharger'20097,470,970'Oxygen-doped n-type gallium nitride freestanding single crystal substrate'20087,400,967'Control system for internal combustion engine'20087,398,149'Control system for internal combustion engine'20087,387,678'GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same'20087,363,920'Fuel supply control system for internal combustion engine'20087,329,339'Strainer device for fuel tank'20087,171,846'In-cylinder pressure detection device'20077,162,360'Combustion state detecting apparatus for an engine'20077,129,525'Semiconductor light-emitting device'20067,125,044'Method and device for folding up air bag, and air bag'20067,062,968'Temperature control apparatus for humidity sensor'20067,046,490'Spin valve magnetoresistance sensor and thin film magnetic head'20067,040,294'Fuel piping'20067,026,063'Spin-valve type magnetoresistance sensor and thin-film magnetic head'20067,012,318'Oxygen-doped n-type gallium nitride freestanding single crystal substrate'20066,998,284'Semiconductor device having quantum well structure, and method of forming the same'20066,994,664'Method for folding up an air bag'20066,945,034'Exhaust gas purifying apparatus for internal combustion engine'20056,935,099'Deteriorated state evaluation device of exhaust emission control equipment'20056,928,805'Hydrocarbon adsorbent state monitoring device'20056,923,849'Hydrocarbon adsorbent state determining apparatus'20056,860,143'State determining apparatus for humidity sensor'20056,841,274'GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same'20056,823,722'Adsorbent state determining apparatus'20046,820,416'Exhaust emission control system for an internal combustion engine'20046,820,413'State determining apparatus for exhaust gas purifier'20046,799,420'Method of evaluating deteriorated state of hydrocarbon adsorbent'20046,798,625'Spin-valve magnetoresistance sensor and thin-film magnetic head'20046,792,749'Exhaust gas purifying apparatus for internal combustion engine'20046,791,807'Spin-valve magnetic transducing element and magnetic head having free layer with negative magnetostriction'20046,773,504'Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate'20046,769,417'Apparatus for evaluating deteriorated state of hydrocarbon adsorbent'20046,763,655'Catalyst state detector for exhaust gas purifying catalyst'20046,758,033'State determining apparatus for exhaust gas purifier'20046,758,038'Temperature estimating apparatus for internal combustion engine'20046,698,186'Air-fuel ratio controller for internal combustion engines'20046,681,567'Control system for internal combustion engine'20046,647,972'State determining apparatus for exhaust gas recirculation system'20036,640,540'Adsorbent state determining apparatus'20036,641,303'Temperature control system for humidity sensor'20036,602,471'Adsorption amount sensor and coking sensor for internal combustion engine'20036,581,370'Failure determination device for humidity sensor and control system for exhaust passage changeover valve'20036,550,449'Control system for internal combustion engine'20036,550,465'Cylinder air/fuel ratio estimation system of internal combustion engine'20036,520,901'Apparatus for folding air bag body'20036,516,772'Combustion state control system of internal combustion engine'20036,505,855'Air bag and air bag apparatus'20036,481,405'Fuel supply control system for internal combustion engine'20026,477,830'Fault determining apparatus for exhaust passage switching valve'20026,449,944'Method of judging deterioration of emission gas control catalyst device'20026,449,943'Method of evaluating deteriorated state of catalytic converter for purifying exhaust gas'20026,406,061'Method of folding air bag body'20026,354,076'Exhaust gas purification system of internal combustion engine'20026,340,533'Spin-valve magnetoresistance sensor and thin film magnetic head'20026,292,739'Air-fuel ratio control system for internal combustion engine'20016,286,306'Exhaust gas purification system of internal combustion engine'20016,276,131'Apparatus for controlling internal combustion engine'20016,266,605'Plant control system'20016,230,486'Plant control system'20016,195,988'Air-fuel ratio control system for internal combustion engine'20016,189,317'Apparatus for controlling internal combustion engine'20016,192,311'Apparatus for controlling internal combustion engine'20016,116,213'Control system for controlling internal combustion engine'2000

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2000–2020Patents assigned to HONDA MOTOR CO LTD (65)· patent assignee history
2000–2019Based in Wako, JP· patent location history
2002–2020Based in Saitama, JP· patent location history
2002–2006Based in Fuji, JP· patent location history
2002–2006Based in Osaka, JP· patent location history
2004–2020Patents assigned to SUMITOMO ELECTRIC INDUSTRIES (111)· patent assignee history
2004–2020Based in Itami, JP· patent location history
2011–2016Patents assigned to UENO MASAKI (72)· patent assignee history
2011–2016Patents assigned to YOSHIZUMI YUSUKE (53)· patent assignee history
2011–2016Patents assigned to ENYA YOHEI (40)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SUMITOMO ELECTRIC INDUSTRIES1112004–2020
UENO MASAKIself722011–2016
HONDA MOTOR CO LTD652000–2020
YOSHIZUMI YUSUKE532011–2016
ENYA YOHEI402011–2016
Locations
LocationPatentsSpan
Itami, JP1122004–2020
Wako, JP392000–2019
Saitama, JP262002–2020
Fuji, JP52002–2006
Osaka, JP42002–2006