Method for forming quantum well structure and method for manufacturing semiconductor light emitting element

A method for forming a quantum well structure, comprising the step of:nalternately growing barrier layers and well layers on a primary surface of a gallium nitride substrate which is inclined with respect to the (0001) plane so as to form the quantum well structure, wherein the inclined angle with respect to the (0001) plane is greater than 10°,wherein in the growing step, the well layers are each formed by growing a group III nitride semiconductor including indium and another group III element,the barrier layers are each grown at a first temperature,the well layers are each grown at a second temperature which is lower than the first temperature,when the well layers are each grown, a starting material gas for indium is supplied before a starting material gas for the another group III element is supplied, anda supplied amount of the starting material gas for the another group III element, a supplied amount of a starting material gas for a group V element, and a supply ratio of the starting material gas for the another group III element and the starting material gas for the group V element when the well layers are each grown are different from the supplied amount and the supply ratio when the barrier layers are each grown.

A method for manufacturing a semiconductor light emitting element having a light emission wavelength of 450 to 650 nm, comprising the step of:nalternately growing barrier layers and well layers on a primary surface of a gallium nitride substrate which is inclined with respect to the (0001) plane so as to form a quantum well active layer, wherein the inclined angle with respect to the (0001) plane is greater than 10°,wherein in the growing step, the well layers are each formed by growing a group III nitride semiconductor including indium and another group III element,the barrier layers are each grown at a first temperature,the well layers are each grown at a second temperature which is lower than the first temperature,when the well layers are each grown, a starting material gas for indium is supplied before a starting material gas for the another group III element is supplied, anda supplied amount of the starting material gas for the another group III element, a supplied amount of a starting material gas for a group V element, and a supply ratio of the starting material gas for the another group III element and the starting material gas for the group V element when the well layers are each grown are different from the supplied amount and the supply ratio when the barrier layers are each grown.