Inventor
Takahiro Dazai
Inventor
Kawasaki, JP
Overview
Patents· 52 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G03Fprimary
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices30%
C08FMacromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds20%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests13%
C09DCoating compositions, e.g. paints, varnishes or lacquers7%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
C07CAcyclic or carbocyclic compounds5%
C08LCompositions of macromolecular compounds3%
B82YSpecific uses or applications of nanostructures3%
B05DProcesses for applying fluent materials to surfaces, in general2%
C07DHeterocyclic compounds2%
PatentTitleYear
10,995,234Method of producing structure containing phase-separated structure20219,690,194'Method of forming resist pattern'20179,644,110'Method of producing structure containing phase-separated structure and method of forming top coat film'20179,606,433'Resist composition, method of forming resist pattern, polymeric compound and compound'20179,567,477'Undercoat agent and method of producing structure containing phase-separated structure'20179,442,371'Method of producing structure containing phase-separated structure, method of forming pattern and method of forming fine pattern'20169,383,642'Polymerization method of high-molecular weight compound, resist composition, and method for forming resist pattern'20169,206,307'Method of producing structure containing phase-separated structure, method of forming pattern and method of forming fine pattern'20159,188,869'Method of producing structure containing phase-separation structure, method of forming pattern, and method of forming fine pattern'20159,122,157'Resist composition and method for forming resist pattern'20159,097,971'Compound, radical polymerization initiator, method for producing compound, polymer, resist composition, and method for forming resist pattern'20159,051,648'Substrate provided with metal nanostructure on surface thereof and method of producing the same'20159,023,580'Method of forming polymeric compound, resist composition and method of forming resist pattern'20158,999,631'Primer and pattern forming method for layer including block copolymer'20158,987,386'Method of producing polymeric compound, resist composition, and method of forming resist pattern'20158,956,810'Primer and pattern forming method for layer including block copolymer'20158,846,838'Fluorine-containing block copolymeric compound'20148,795,948'Resist composition, method of forming resist pattern and polymeric compound'20148,742,038'Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound'20148,642,244'Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound'20148,632,960'Method of forming resist pattern and negative tone-development resist composition'20148,541,529'Positive resist composition, method of forming resist pattern, and polymeric compound'20138,501,387'Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound'20138,487,056'Positive resist composition and method of forming resist pattern'20138,475,997'Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing polymeric compound'20138,404,428'Positive resist composition, method of forming resist pattern using the same, and fluorine-containing polymeric compound'20138,404,426'Negative resist composition, method of forming resist pattern and polymeric compound'20138,394,578'Method of forming resist pattern and negative tone-development resist composition'20138,367,296'Positive resist composition, method of forming resist pattern, and polymeric compound'20138,329,378'Positive resist composition, method of forming resist pattern, and polymeric compound'20128,323,869'Positive resist composition and method of forming resist pattern'20128,298,745'Polymeric compound, positive resist composition, and method of forming resist pattern'20128,268,529'Positive resist composition, method of forming resist pattern using the same, and polymeric compound'20128,236,477'Positive resist composition and method of forming resist pattern'20128,232,041'Positive resist composition, method of forming resist pattern, and polymeric compound'20128,227,170'Resist composition, method of forming resist pattern, polymeric compound, and compound'20128,221,956'Resist composition for immersion exposure, method of forming resist pattern, and flourine-containing polymeric compound'20128,206,891'Positive resist composition and method of forming resist pattern'20128,192,915'Positive resist composition, method of forming resist pattern, and polymeric compound'20128,182,976'Positive resist composition, method of forming resist pattern, and polymeric compound'20128,105,749'Polymer compound, positive resist composition, and method of forming resist pattern'20128,088,553'Positive resist composition, method of forming resist pattern, and polymeric compound'20128,021,823'Positive resist composition, method of forming resist pattern, and polymeric compound'20117,989,138'Fluorine-containing compound, resist composition for immersion exposure, and method of forming resist pattern'20117,960,089'Compound, method for producing same, positive resist composition and method for forming resist pattern'20117,960,091'Resist composition and method of forming resist pattern'20117,919,651'Positive resist composition, method of forming resist pattern, polymeric compound, and compound'20117,914,967'Fluorine-containing compound, resist composition for immersion exposure, and method of forming resist pattern'20117,767,379'Polymer compound, positive resist composition, and method of forming resist pattern'20107,745,098'Polymer compound, positive resist composition and method of forming resist pattern'20107,741,009'Positive resist composition and method of forming resist pattern'20107,604,920'Positive resist composition, method of forming resist pattern, polymeric compound, and compound'2009Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2009–2021Patents assigned to TOKYO OHKA KOGYO CO LTD (50)· patent assignee history
2009–2021Based in Kawasaki, JP· patent location history
2012–2015Patents assigned to DAZAI TAKAHIRO (27)· patent assignee history
2012–2014Patents assigned to HIRANO TOMOYUKI (20)· patent assignee history
2012–2014Patents assigned to SHIONO DAIJU (19)· patent assignee history
2012–2013Patents assigned to MATSUMIYA TASUKU (11)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOKYO OHKA KOGYO CO LTD | 50 | 2009–2021 |
| DAZAI TAKAHIROself | 27 | 2012–2015 |
| HIRANO TOMOYUKI | 20 | 2012–2014 |
| SHIONO DAIJU | 19 | 2012–2014 |
| MATSUMIYA TASUKU | 11 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kawasaki, JP | 52 | 2009–2021 |