LexDanaLexDanabeta
Inventor

Yusuke Yoshizumi

Inventor
Itami, JP

Overview

84→
Patents
2009–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 84 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light25%
B82YSpecific uses or applications of nanostructures24%
H10HInorganic light-emitting semiconductor devices having potential barriers16%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
C30BSingle-crystal growth5%
H01LSemiconductor devices5%
H10DInorganic electric semiconductor devices4%
Y10TTechnical subjects covered by former us classification2%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
B32BLayered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form1%
PatentTitleYear
11,094,537Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device202110,600,676Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device202010,158,035Semiconductor stack, light-receiving device, and method for producing semiconductor stack201810,113,248Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same20189,917,004'Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device'20189,825,134'Layered semiconductor having base layer including GaN substrate'20179,708,735'Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same'20179,499,925'Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same'20169,231,370'Group III nitride semiconductor light emitting device'20169,136,337'Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same'20158,953,656'III-nitride semiconductor laser device and method for fabricating III-nitride semiconductor laser device'20158,929,416'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20158,927,962'Group III nitride semiconductor optical device'20158,923,354'Nitride semiconductor laser, epitaxial substrate'20148,917,750'III-nitride semiconductor laser diode'20148,829,545'Group III nitride semiconductor light-emitting device'20148,815,621'Method of forming p-type gallium nitride based semiconductor, method of forming nitride semiconductor device, and method of forming epitaxial wafer'20148,809,868'Group-III nitride semiconductor device, method for fabricating Group-III nitride semiconductor device, and epitaxial substrate'20148,803,274'Nitride-based semiconductor light-emitting element'20148,771,552'Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same'20148,772,064'Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device'20148,748,868'Nitride semiconductor light emitting device and epitaxial substrate'20148,741,674'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20148,718,110'Nitride semiconductor laser and epitaxial substrate'20148,693,515'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20148,653,621'Nitride-based semiconductor light-emitting element'20148,619,828'Group III nitride semiconductor laser diode'20138,594,145'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20138,546,163'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20138,548,020'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20138,548,021'III-nitride semiconductor laser, and method for fabricating III-nitride semiconductor laser'20138,541,253'III-nitride semiconductor laser device, and method of fabricating the III-nitride semiconductor laser device'20138,513,645'Gallium nitride-based epitaxial wafer and method of producing gallium nitride-based semiconductor light-emitting device'20138,513,684'Nitride semiconductor light emitting device'20138,507,305'Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and epitaxial substrate'20138,488,642'Gallium nitride based semiconductor light-emitting device and method for fabricating the same, gallium nitride based light-emitting diode, epitaxial wafer, and method for fabricating gallium nitride light-emitting diode'20138,487,327'Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor device'20138,483,251'Group III nitride semiconductor laser diode, and method for producing group III nitride semiconductor laser diode'20138,476,086'Semiconductor device and method of its manufacture'20138,471,366'Nitride semiconductor substrate'20138,420,419'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20138,405,066'Nitride-based semiconductor light-emitting device'20138,401,048'Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device'20138,391,327'Group III nitride semiconductor element and epitaxial wafer'20138,389,312'Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device'20138,361,885'Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and method of estimating damage from formation of scribe groove'20138,357,558'Method of making semiconductor light-emitting device'20138,357,946'Nitride semiconductor light emitting device, epitaxial substrate, and method for fabricating nitride semiconductor light emitting device'20138,304,269'Method of fabricating group III nitride semiconductor device'20128,306,082'Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device'20128,304,793'III-nitride semiconductor optical device and epitaxial substrate'20128,284,811'Gallium nitride-based semiconductor laser diode'20128,265,113'Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device'20128,228,963'Gallium nitride-based semiconductor optical device, method of fabricating gallium nitride-based semiconductor optical device, and epitaxial wafer'20128,227,277'Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device'20128,213,475'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20128,207,544'Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor device'20128,207,556'Group III nitride semiconductor device and epitaxial substrate'20128,183,596'High electron mobility transistor, epitaxial wafer, and method of fabricating high electron mobility transistor'20128,183,071'Method for producing nitride semiconductor optical device and epitaxial wafer'20128,175,129'Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and method of estimating damage from formation of scribe groove'20128,173,458'Method for forming quantum well structure and method for manufacturing semiconductor light emitting element'20128,174,035'Nitride-based semiconductor light emitting device'20128,148,716'Group III nitride semiconductor optical device, epitaxial substrate, and method of making group III nitride semiconductor light-emitting device'20128,139,619'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20128,124,430'Method for forming quantum well structure and method for manufacturing semiconductor light emitting element'20128,107,507'Group III nitride semiconductor element and epitaxial wafer'20128,105,857'Method of fabricating group-III nitride semiconductor laser device'20128,076,167'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20118,071,405'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20118,067,257'Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device'20118,053,806'Group III nitride semiconductor device and epitaxial substrate'20118,048,702'Method of fabricating nitride-based semiconductor optical device'20118,018,029'Gallium nitride-based epitaxial wafer and method of fabricating epitaxial wafer'20117,949,026'Group III nitride semiconductor laser'20117,939,354'Method of fabricating nitride semiconductor laser'20117,933,303'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20117,884,351'Nitride semiconductor light-emitting device'20117,879,636'Method of forming p-type gallium nitride based semiconductor, method of forming nitride semiconductor device, and method of forming epitaxial wafer'20117,873,088'Group III nitride semiconductor element and epitaxial wafer'20117,858,963'Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device'20107,851,821'Group III nitride semiconductor device, epitaxial substrate, and method of fabricating group III nitride semiconductor device'20107,851,243'Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device'20107,547,910'Semiconductor light-emitting device and method of manufacturing semiconductor light-emitting device'2009

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2009–2021Patents assigned to SUMITOMO ELECTRIC INDUSTRIES (81)· patent assignee history
2009–2021Based in Itami, JP· patent location history
2011–2017Patents assigned to YOSHIZUMI YUSUKE (58)· patent assignee history
2011–2016Patents assigned to UENO MASAKI (53)· patent assignee history
2011–2016Patents assigned to ENYA YOHEI (38)· patent assignee history
2011–2016Patents assigned to KYONO TAKASHI (35)· patent assignee history
2018Based in Hyogo, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SUMITOMO ELECTRIC INDUSTRIES812009–2021
YOSHIZUMI YUSUKEself582011–2017
UENO MASAKI532011–2016
ENYA YOHEI382011–2016
KYONO TAKASHI352011–2016
Locations
LocationPatentsSpan
Itami, JP832009–2021
Hyogo, JP12018