Inventor
Shigeyuki Iwasa
Inventor
Tokyo, JP
Overview
56→
Patents
1996–2019
Patent span
General tagging of new technological developments
Primary field (CPC Y)
Patents· 56 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G03Fprimary
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices23%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests14%
H01MProcesses or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy13%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution13%
C08FMacromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds9%
C07CAcyclic or carbocyclic compounds7%
C07DHeterocyclic compounds6%
Y02PClimate change mitigation technologies in the production or processing of goods3%
C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds2%
Y02TClimate change mitigation technologies related to transportation2%
PatentTitleYear
10,497,978Power storage device20199,647,269'Electrode active material and secondary battery'20179,443,661'Power storage device having a nitroxyl polymer in a cathode and a lithium or lithium alloy anode'20169,356,292'Radical composition and battery using same'20169,287,533'Non-aqueous secondary battery, mounted unit, and method for manufacturing non-aqueous secondary battery'20168,969,483'(Meth)acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it'20158,802,783'(Meth)acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it'20148,802,798'(Meth)acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it'20148,728,662'Process for producing polyradical compound and battery cell'20148,617,744'Electricity storage device'20138,475,956'Polyradical compound-conductive material composite, method for producing the same, and battery using the same'20138,242,213'Method for manufacturing polyradical compound and battery'20128,119,751'(Meth)acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it'20127,642,011'Secondary battery with a radical compound active material'20107,544,441'Secondary battery having an active material radical compound'20097,476,465'Electrode active material and electrode using the electrode active material and battery using the electrode'20097,432,035'(Meth)acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it'20087,318,981'Secondary battery with a nitroxyl polymer active material'20087,226,697'Electricity storage device'20077,186,495'(Meth) acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it'20077,122,277'Battery and battery electrode'20067,045,248'Secondary battery having radical compound electrode'20067,018,738'Electrode and battery using same'20066,924,079'Resist resin, chemical amplification type resist, and method of forming of pattern with the same'20056,893,775'Battery having active material containing neutral carbon radical compound'20056,866,964'Secondary battery'20056,849,384'Photoacid generators, photoresist compositions containing the same and pattering method with the use of the compositions'20056,773,767'Liquid crystal display unit and method for manufacturing the same'20046,638,685'Photoacid generator containing two kinds of sulfonium salt compound, chemically amplified resist containing the same and pattern transfer method'20036,602,647'Sulfonium salt compound and resist composition and pattern forming method using the same'20036,559,337'(Meth)acrylate, polymer, photoresist composition, and pattern forming process making use of the composition'20036,528,232'Sulfonium salt compound, photoresist composition and method for patterning by employing same'20036,469,197'Negative photoresist composition using polymer having 1,2-diol structure and process for forming pattern using the same'20026,437,052'Monomer having diol structure, polymer thereof, and negative photoresist composition and pattern forming method using the same'20026,391,529'(Meth)acrylate, polymer photoresist composition, and pattern forming process making use of the composition'20026,352,813'Photosensitive resin composition and patterning method using the same'20026,287,746'Chemically amplified resist large in transparency and sensitivity to exposure light less than 248 nanometer wavelength and process of forming mask'20016,248,499'(Meth)acrylate, polymer, photoresist composition, and pattern forming process making use of the composition'20016,146,806'Negative photoresist composition using polymer having 1,2-diol structure and process for forming pattern using the same'20006,140,010'Negative type photoresist composition used for light beam with short wavelength and method of forming pattern using the same'20006,106,998'Negative resist materials, pattern formation method making use thereof, and method of manufacturing semiconductor devices'20006,074,801'Negative type photoresist composition used for light beam with short wavelength and method of forming pattern using the same'20006,030,747'Chemically amplified resist large in transparency and sensitivity to exposure light less than 248 nanometer wavelength and process of forming mask'20005,994,025'Photoresist, compounds for composing the photoresist, and method of forming pattern by using the photoresist'19995,985,522'Photoresist and compounds for composing the photoresist'19995,866,304'Photosensitive resin and method for patterning by use of the same'19995,770,346'Photoresist and compounds for composing the photoresist'19985,763,142'Method for forming resist pattern'19985,756,850'Sulfonium salts having bridged cyclic alkyl group useful as resist for deep UV lithography'19985,747,622'Polymer having silicon atoms and sulfonium salt units and photoresist compositions containing the same'19985,738,975'Photosensitive resin and method for patterning by use of the same'19985,723,257'Si containing high molecular compound and photosensitive resin composition'19985,691,111'Photosensitive resin composition useful as resist for deep UV lithography containing sulfonium salts'19975,635,332'Alkylsulfonium salts and photoresist compositions containing the same'19975,621,019'Monomer having vinyl group, polymer thereof and photosensitive resin including those'19975,585,507'Alkylsulfonium salts and photoresist compositions containing the same'1996Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1996–2019Patents assigned to NEC CORP (54)· patent assignee history
1996–2019Based in Tokyo, JP· patent location history
1998Based in Toyko, JP· patent location history
2006–2013Based in Minato-ku, JP· patent location history
2012–2017Patents assigned to IWASA SHIGEYUKI (9)· patent assignee history
2012–2017Patents assigned to NAKAHARA KENTARO (7)· patent assignee history
2012–2016Patents assigned to SUGURO MASAHIRO (5)· patent assignee history
2014–2016Patents assigned to IRIYAMA JIRO (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NEC CORP | 54 | 1996–2019 |
| IWASA SHIGEYUKIself | 9 | 2012–2017 |
| NAKAHARA KENTARO | 7 | 2012–2017 |
| SUGURO MASAHIRO | 5 | 2012–2016 |
| IRIYAMA JIRO | 2 | 2014–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 52 | 1996–2019 |
| Minato-ku, JP | 3 | 2006–2013 |
| Toyko, JP | 1 | 1998 |