Silicon germanium film formation method and structure

A semiconductor device manufacturing method comprising:nproviding a substrate;defining a first region of the substrate and a second region of the substrate;doping the first region of the substrate with a P-type dopant in a first concentration;exposing a surface of the substrate of the first and second regions to a deposition stream of silicon germanium (SiGe) for at least a predetermined period determined responsive to at least the first concentration so that a layer of SiGe forms on the first region during the predetermined period with substantially no deposition of SiGe on the second region.

A method to process a substrate comprising:nproviding a substrate with an exposed surface;forming a first FET region in the exposed surface;forming a second FET region in the exposed surface;doping source and drain regions of the first FET region with a first dopant, the first dopant being one of a P-type dopant, to form a first doped area; andexposing the exposed surface to deposition of silicon germanium (SiGe) for at least a predefined period such that:responsive to the first dopant being a P-type dopant, a layer of SiGe forms on the first doped area while substantially no SiGe is deposited on the remainder of the exposed surface; andresponsive to the first dopant being an N-type dopant, substantially no SiGe is deposited on the first doped area while a layer of SiGe forms on the remainder of the exposed surface.