Inventor
Abhishek Dube
Inventor
Fishkill, NY, US
Overview
Patents· 41 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices37%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
H01LSemiconductor devices16%
C23CCoating metallic material5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
C30BSingle-crystal growth2%
H01JElectric discharge tubes or discharge lamps2%
G06NComputing arrangements based on specific computational models1%
G10LSpeech analysis techniques or speech synthesis1%
H05KPrinted circuits1%
PatentTitleYear
10,789,956Text-to-speech modeling202010,504,723Method and apparatus for selective epitaxy201910,276,688Selective process for source and drain formation201910,199,215Apparatus and method for selective deposition201910,128,110Method to enhance growth rate for selective epitaxial growth20189,929,055'Method to grow thin epitaxial films at low temperature'20189,923,081'Selective process for source and drain formation'20189,881,790'Method to enhance growth rate for selective epitaxial growth'20189,805,942'Method of modifying epitaxial growth shape on source drain area of transistor'20179,768,013'Apparatus and method for selective deposition'20179,704,708'Halogenated dopant precursors for epitaxy'20179,530,661'Method of modifying epitaxial growth shape on source drain area of transistor'20169,530,638'Method to grow thin epitaxial films at low temperature'20169,059,285'Structure and method for increasing strain in a device'20159,041,119'Forming CMOS with close proximity stressors'20158,927,375'Forming silicon-carbon embedded source/drain junctions with high substitutional carbon level'20158,889,566'Low cost flowable dielectric films'20148,779,525'Method for growing strain-inducing materials in CMOS circuits in a gate first flow'20148,685,845'Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas'20148,648,394'Method for growing conformal EPI layers and structure thereof'20148,637,958'Structure and method for forming isolation and buried plate for trench capacitor'20148,618,617'Field effect transistor device'20138,551,845'Structure and method for increasing strain in a device'20138,546,204'Method for growing conformal epi layers and structure thereof'20138,492,234'Field effect transistor device'20138,426,265'Method for growing strain-inducing materials in CMOS circuits in a gate first flow'20138,421,191'Monolayer dopant embedded stressor for advanced CMOS'20138,415,252'Selective copper encapsulation layer deposition'20138,394,712'Cavity-free interface between extension regions and embedded silicon-carbon alloy source/drain regions'20138,389,352'Silicon germanium film formation method and structure'20138,378,424'Semiconductor structure having test and transistor structures'20138,361,859'Stressed transistor with improved metastability'20138,354,314'Silicon germanium film formation method and structure'20138,338,279'Reduced pattern loading for doped epitaxial process and semiconductor structure'20128,299,535'Delta monolayer dopants epitaxy for embedded source/drain silicide'20128,298,908'Structure and method for forming isolation and buried plate for trench capacitor'20128,236,660'Monolayer dopant embedded stressor for advanced CMOS'20128,173,524'Process for epitaxially growing epitaxial material regions'20128,084,788'Method of forming source and drain of a field-effect-transistor and structure thereof'20118,035,141'Bi-layer nFET embedded stressor element and integration to enhance drive current'20117,759,213'Pattern independent Si:C selective epitaxy'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2015Patents assigned to IBM (26)· patent assignee history
2010–2014Based in Fishkill, NY, US· patent location history
2011–2015Patents assigned to DUBE ABHISHEK (19)· patent assignee history
2011–2014Based in Hopewell Junction, NY, US· patent location history
2012–2013Patents assigned to HOLT JUDSON R (6)· patent assignee history
2012–2015Patents assigned to ONTALUS VIOREL (6)· patent assignee history
2014–2019Patents assigned to APPLIED MATERIALS INC (13)· patent assignee history
2014–2017Based in Belmont, CA, US· patent location history
2017–2019Based in Fremont, CA, US· patent location history
2020Based in Henrico, VA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 26 | 2010–2015 |
| DUBE ABHISHEKself | 19 | 2011–2015 |
| APPLIED MATERIALS INC | 13 | 2014–2019 |
| HOLT JUDSON R | 6 | 2012–2013 |
| ONTALUS VIOREL | 6 | 2012–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Fishkill, New York, US | 19 | 2010–2014 |
| Fremont, California, US | 9 | 2017–2019 |
| Belmont, California, US | 7 | 2014–2017 |
| Hopewell Junction, New York, US | 5 | 2011–2014 |
| Henrico, Virginia, US | 1 | 2020 |