Formation of TSV backside interconnects by modifying carrier wafers

A method of forming an integrated circuit structure, the method comprising:nproviding a semiconductor wafer comprising a first notch extending from an edge of the semiconductor wafer into the semiconductor wafer, and a through-semiconductor via (TSV) extending into the semiconductor wafer;mounting a carrier wafer onto the semiconductor wafer, wherein the carrier wafer comprises a second notch in the carrier wafer, and wherein the step of mounting the carrier wafer comprises overlapping at least a portion of the first notch with at least a portion of the second notch;after the step of mounting the carrier wafer, grinding a backside of the semiconductor wafer to expose the TSV;depositing a conductive layer on the backside of the semiconductor wafer and electrically connected to the TSV; andafter the step of depositing, demounting the carrier wafer from the semiconductor wafer.

A method of forming an integrated circuit structure, the method comprising:nproviding a semiconductor wafer comprising active devices, wherein the semiconductor wafer comprises a first notch extending from an edge of the of the semiconductor wafer into the semiconductor wafer; andmounting a carrier wafer onto the semiconductor wafer, wherein the carrier wafer comprises a glass wafer, wherein the carrier wafer comprises a second notch, wherein the second notch overlaps at least a portion of the first notch, and wherein the carrier wafer is joined to the semiconductor wafer through an adhesive layer.

A method of forming an integrated circuit structure, the method comprising:nproviding a semiconductor wafer; andmounting a carrier wafer onto the semiconductor wafer, wherein substantially all corners of the carrier wafer on a side facing the semiconductor wafer have a sharp profile with a 90 degree angle, and wherein the carrier wafer has a resistivity lower than about 1×108 ohm.