USPatentGranted
B2

Ultra-thin ohmic contacts for p-type nitride light emitting devices

Granted 25 Oct 2011 · 10 office actions

Current assignee: Cree LED, Inc. · originally Wolfspeed, Inc.

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Inventors: Kevin Haberern, Michael Bergmann, Ting Li, James Ibbetson +3 · Examiner: Matthew E Warren · AU 2815 · TC 2800

Life of the patent

4 dated events
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Abstract

A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 Å and a specific contact resistivity less than about 10 −3 ohm-cm 2 .

Claims

20 · 1 independent · depth 4
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20 granted claims

Classifications

4 codes
IPC · International Patent Classification
Section H — Electricity
  • H01L29/22
USPC · US Patent Classification
257/99257/744257/745

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File wrapper

Pendency
6.2 y
2,281 days filing → grant
Office actions
5
after a restriction
Responses
4
2 RCE
Appeals
1
notices of appeal
Examiner
Matthew E Warren
art unit 2815 · TC 2800
Citations: 44 back · 0 forward

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Priority chain

2 priority documents
Priority
27 Jul 2004
earliest claimed
›Priority documents — 2
TypeDocumentDate
provisionalUS 6059135327 Jul 2004
related publicationUS 20060046328 A12 Mar 2006

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