Ultra-thin ohmic contacts for p-type nitride light emitting devices
Granted 25 Oct 2011 · 10 office actions
Current assignee: Cree LED, Inc. · originally Wolfspeed, Inc.
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Inventors: Kevin Haberern, Michael Bergmann, Ting Li, James Ibbetson +3 · Examiner: Matthew E Warren · AU 2815 · TC 2800
Life of the patent
4 dated eventsAbstract
A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 Å and a specific contact resistivity less than about 10 −3 ohm-cm 2 .
Claims
20 · 1 independent · depth 4Classifications
4 codes- H01L29/22
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2 priority documents›Priority documents — 2
| Type | Document | Date |
|---|---|---|
| provisional | US 60591353 | 27 Jul 2004 |
| related publication | US 20060046328 A1 | 2 Mar 2006 |
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