LexDanaLexDanabeta
Inventor

James Ibbetson

Inventor
Santa Barbara, CA, US

Overview

114→
Patents
2003–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 114 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers30%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1019%
H01LSemiconductor devices12%
F21KNon-electric light sources using luminescence6%
F21YIndexing scheme associated with subclasses f21k, f21l, f21s and f21v, relating to the form or the kind of the light sources or of the colour of the light emitted5%
H05BElectric heating5%
G02BOptical elements, systems or apparatus4%
F21VFunctional features or details of lighting devices or systems thereof3%
LOC133%
F21SNon-portable lighting devices2%
PatentTitleYear
10,900,621Circadian light fixtures, and other devices202110,781,984Skylight Fixture202010,546,978Molded chip fabrication method and apparatus202010,529,900Solid state lighting device providing spectral power distribution with enhanced perceived brightness202010,505,083Coating method utilizing phosphor containment structure and devices fabricated using same201910,502,374Light fixtures and methods201910,465,869Skylight fixture201910,451,229Skylight fixture201910,436,969Optical waveguide and luminaire incorporating same201910,439,107Chip with integrated phosphor201910,416,377Luminaire with controllable light emission201910,408,986Optical waveguide and lamp including same201910,288,261Low profile lighting module201910,199,360Wire bond free wafer level LED201910,164,158Molded chip fabrication method and apparatus20189,823,408'Optical waveguide and luminaire incorporating same'20179,793,247'Solid state lighting component'20179,780,266'Stabilized quantum dot structure and method of making a stabilized quantum dot structure'20179,685,585'Quantum dot narrow-band downconverters for high efficiency LEDs'20179,666,772'High powered light emitter packages with compact optics'20179,640,737'Horizontal light emitting diodes including phosphor particles'20179,634,191'Wire bond free wafer level LED'20179,581,751'Optical waveguide and lamp including same'20179,461,201'Light emitting diode dielectric mirror'20169,412,926'High power solid-state lamp'20169,397,266'Lateral semiconductor light emitting diodes having large area contacts'20169,389,367'Optical waveguide and luminaire incorporating same'20169,368,428'Dielectric wafer level bonding with conductive feed-throughs for electrical connection and thermal management'20169,362,459'High reflectivity mirrors and method for making same'20169,328,876'High efficiency LED lamp'20169,275,979'Enhanced color rendering index emitter through phosphor separation'20169,240,528'Solid state lighting apparatus with high scotopic/photopic (S/P) ratio'20169,159,888'Wafer level phosphor coating method and devices fabricated utilizing method'20159,142,734'Composite white light source and method for fabricating'20159,112,083'Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures'20159,105,824'High reflective board or substrate for LEDs'20159,105,817'Molded chip fabrication method and apparatus'20159,093,293'High voltage low current surface emitting light emitting diode'20159,093,616'Molded chip fabrication method and apparatus'20159,076,940'Solid state lighting component'20159,054,019'Low profile lighting module with side emitting LEDs'20159,054,282'Semiconductor light emitting devices with applied wavelength conversion materials and methods for forming the same'20159,024,349'Wafer level phosphor coating method and devices fabricated utilizing method'20159,012,937'Multiple conversion material light emitting diode package and method of fabricating same'20158,957,440'Light emitting devices with low packaging factor'20158,884,510'Semiconductor light emitting devices with densely packed phosphor layer at light emitting surface'20148,878,219'Flip-chip phosphor coating method and devices fabricated utilizing method'20148,847,257'Semiconductor light emitting devices and submounts'20148,759,868'Ultra-thin ohmic contacts for p-type nitride light emitting devices'20148,735,920'Light emitting diode package with optical element'20148,710,536'Composite high reflectivity layer'20148,698,171'Solid state lighting component'20148,692,277'Light emitting diodes including optically matched substrates'20148,686,460'Ultra-thin ohmic contacts for p-type nitride light emitting devices'20148,684,781'Semiconductor light emitting devices with densely packed phosphor layer at light emitting surface'20148,680,556'Composite high reflectivity layer'20148,674,375'Roughened high refractive index layer/LED for high light extraction'20148,669,572'Power lamp package'20148,664,846'Solid state lighting device including green shifted red component'20148,643,039'Lateral semiconductor Light Emitting Diodes having large area contacts'20148,617,909'LED with substrate modifications for enhanced light extraction and method of making same'20138,598,609'Composite high reflectivity layer'20138,558,252'White LEDs with emission wavelength correction'20138,530,921'High voltage low current surface emitting LED'2013D0689031'LED chip'20138,476,668'High voltage low current surface emitting LED'20138,436,371'Microscale optoelectronic device packages'20138,426,881'Light emitting diodes including two reflector layers'20138,410,679'Semiconductor light emitting devices with densely packed phosphor layer at light emitting surface'20138,368,100'Semiconductor light emitting diodes having reflective structures and methods of fabricating same'2013D0673126'LED chip'20128,329,482'White-emitting LED chips and method for making same'20128,324,637'High efficiency LEDs with tunnel junctions'20128,288,942'High efficacy white LED'20128,227,268'Methods of fabricating group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures'20128,217,412'Solid state lighting component'20128,154,043'Packaged light emitting devices'20128,138,000'Methods for forming semiconductor light emitting devices and submounts'20128,124,957'Low resistance tunnel junctions in wide band gap materials and method of making same'20128,089,090'Ultra-thin ohmic contacts for p-type nitride light emitting devices'20128,044,425'Ultra-thin ohmic contacts for p-type nitride light emitting devices'20118,034,647'LED with substrate modifications for enhanced light extraction and method of making same'20118,017,963'Light emitting diode with a dielectric mirror having a lateral configuration'20117,985,970'High voltage low current surface-emitting LED'20117,977,686'Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices'20117,928,456'Packaged light emitting devices'20117,915,629'Composite high reflectivity layer'20117,915,085'Molded chip fabrication method'20117,863,635'Semiconductor light emitting devices with applied wavelength conversion materials'20117,821,023'Solid state lighting component'20107,737,451'High efficiency LED with tunnel junction layer'2010D0616839'LED chip'20107,612,383'Reflector packages and semiconductor light emitting devices including the same'2009D0602450'LED chip'2009D0593968'LED chip'20097,534,633'LED with substrate modifications for enhanced light extraction and method of making same'20097,518,158'Semiconductor light emitting devices and submounts'2009D0583338'LED chip'2008D0582865'LED chip'2008D0582866'LED chip'20087,420,222'Light emitting diodes including transparent oxide layers'2008D0566057'LED chip'2008D0566056'LED chip'20087,329,905'Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices'20087,326,583'Methods for packaging of a semiconductor light emitting device'20087,312,474'Group III nitride based superlattice structures'20077,279,346'Method for packaging a light emitting device by one dispense then cure step followed by another'20077,026,659'Light emitting diodes including pedestals'20066,972,438'Light emitting diode with porous SiC substrate and method for fabricating'20056,958,497'Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures'20056,885,036'Scalable LED with improved current spreading structures'20056,791,119'Light emitting diodes including modifications for light extraction'20046,614,056'Scalable led with improved current spreading structures'20036,515,313'High efficiency light emitters with reduced polarization-induced charges'2003

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2003–2014Based in Goleta, CA, US· patent location history
2004–2020Patents assigned to CREE INC (104)· patent assignee history
2005–2021Based in Santa Barbara, CA, US· patent location history
2005Based in Golota, CA, US· patent location history
2007Based in Geleta, CA, US· patent location history
2012–2020Patents assigned to IBBETSON JAMES (49)· patent assignee history
2012–2017Patents assigned to KELLER BERND (18)· patent assignee history
2012–2017Patents assigned to TARSA ERIC (7)· patent assignee history
2019–2021Patents assigned to IDEAL IND LIGHTING LLC (8)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
CREE INC1042004–2020
IBBETSON JAMESself492012–2020
KELLER BERND182012–2017
IDEAL IND LIGHTING LLC82019–2021
TARSA ERIC72012–2017
Locations
LocationPatentsSpan
Santa Barbara, California, US962005–2021
Goleta, California, US162003–2014
Geleta, California, US12007
Golota, California, US12005