Inventor
Ting Li
Inventor
Ventura, CA, US
Overview
Patents· 22 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers36%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1034%
G02BOptical elements, systems or apparatus9%
H01LSemiconductor devices7%
H10DInorganic electric semiconductor devices5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
G06FElectric digital data processing2%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation2%
PatentTitleYear
10,956,228Task management using a virtual node202110,043,942Vertical multi-junction light emitting diode20189,362,459'High reflectivity mirrors and method for making same'20168,759,868'Ultra-thin ohmic contacts for p-type nitride light emitting devices'20148,710,536'Composite high reflectivity layer'20148,686,460'Ultra-thin ohmic contacts for p-type nitride light emitting devices'20148,680,556'Composite high reflectivity layer'20148,617,909'LED with substrate modifications for enhanced light extraction and method of making same'20138,598,609'Composite high reflectivity layer'20138,507,924'Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming'20138,384,115'Bond pad design for enhancing light extraction from LED chips'20138,089,090'Ultra-thin ohmic contacts for p-type nitride light emitting devices'20128,044,425'Ultra-thin ohmic contacts for p-type nitride light emitting devices'20118,034,647'LED with substrate modifications for enhanced light extraction and method of making same'20118,017,963'Light emitting diode with a dielectric mirror having a lateral configuration'20117,932,106'Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming'20117,915,629'Composite high reflectivity layer'20117,893,490'HVNMOS structure for reducing on-resistance and preventing BJT triggering'20117,534,633'LED with substrate modifications for enhanced light extraction and method of making same'20097,508,032'High voltage device with low on-resistance'20096,972,438'Light emitting diode with porous SiC substrate and method for fabricating'20056,444,551'N-type buried layer drive-in recipe to reduce pits over buried antimony layer'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002–2011Patents assigned to TAIWAN SEMICONDUCTOR MFG (3)· patent assignee history
2002–2011Based in Hsinchu, TW· patent location history
2005–2014Patents assigned to CREE INC (14)· patent assignee history
2005–2016Based in Ventura, CA, US· patent location history
2012–2016Patents assigned to LI TING (8)· patent assignee history
2012–2016Patents assigned to IBBETSON JAMES (6)· patent assignee history
2012–2014Patents assigned to BERGMANN MICHAEL (2)· patent assignee history
2014Based in Pleasanton, CA, US· patent location history
2018Based in Dublin, CA, US· patent location history
2021Based in Shanghai, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CREE INC | 14 | 2005–2014 |
| LI TINGself | 8 | 2012–2016 |
| IBBETSON JAMES | 6 | 2012–2016 |
| TAIWAN SEMICONDUCTOR MFG | 3 | 2002–2011 |
| BERGMANN MICHAEL | 2 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Ventura, California, US | 16 | 2005–2016 |
| Hsinchu, TW | 3 | 2002–2011 |
| Shanghai, CN | 1 | 2021 |
| Dublin, California, US | 1 | 2018 |
| Pleasanton, California, US | 1 | 2014 |