Polishing slurry and polishing method
Granted 9 Aug 2011 · 4 office actions
Current assignee: Hitachi Chemical Co., Ltd. · originally Hitachi, Ltd.
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Inventors: Shouichi Sasaki, Sou Anzai, Jin Amanokura, Masato Fukasawa +1 · Examiner: Humera Sheikh · AU 1789 · TC 1700
Life of the patent
12 dated eventsAbstract
The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive, wherein the surface of the abrasive is modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.
Claims
5 · 1 independent · depth 2Classifications
5 codes- H01L21/302
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1 priority documents›Priority documents — 1
| Type | Document | Date |
|---|---|---|
| related publication | US 20070232197 A1 | 4 Oct 2007 |
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