USPatentGranted
B2

Polishing slurry and polishing method

Granted 9 Aug 2011 · 4 office actions

Current assignee: Hitachi Chemical Co., Ltd. · originally Hitachi, Ltd.

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Inventors: Shouichi Sasaki, Sou Anzai, Jin Amanokura, Masato Fukasawa +1 · Examiner: Humera Sheikh · AU 1789 · TC 1700

Life of the patent

12 dated events
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Abstract

The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive, wherein the surface of the abrasive is modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.

Claims

5 · 1 independent · depth 2
12345
5 granted claims

Classifications

5 codes
IPC · International Patent Classification
Section H — Electricity
  • H01L21/302
USPC · US Patent Classification
438/692252/79.1216/89438/693

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File wrapper

⤢ drag to zoomJul 2007Jan 2008Jul 2008Jan 2009Jul 2009Jan 2010Jul 2010Jan 2011Jul 2011USPTOApplicantNon-final rejectionFinal rejectionNotice of appeal filedNotice of allowanceRequest for continued examination
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Pendency
4.2 y
1,537 days filing → grant
Office actions
2
non-final + final
Responses
1
1 RCE
Appeals
3
notices of appeal
Examiner
Humera Sheikh
art unit 1789 · TC 1700
Citations: 48 back · 0 forward

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Term & fees

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Priority chain

1 priority documents
›Priority documents — 1
TypeDocumentDate
related publicationUS 20070232197 A14 Oct 2007

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Citations

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