Semiconductor thin film and semiconductor device

A semiconductor device comprising:na first thin film transistor comprising a first semiconductor film over an insulating surface;an insulating film over the first thin film transistor;a second semiconductor circuit comprising a second semiconductor film over the insulating film;a wiring electrically connected to the second semiconductor circuit;a photoelectric conversion layer on the wiring; andan electrode on the photoelectric conversion layer,wherein at least one of the first and second semiconductor films is a crystalline silicon film,wherein each of diffraction spots of an electron beam diffraction pattern of the one of the first and second semiconductor films is substantially circular, andwherein a ratio of a minor-axis length to a major-axis length of each of the diffraction spots is in a range of 1/1 to 1/1.5.

A semiconductor device comprising:na first thin film transistor comprising a first semiconductor film over an insulating surface;an insulating film having a planarized surface over the first thin film transistor;a second semiconductor circuit comprising a second semiconductor film over the planarized surface;a wiring electrically connected to the second semiconductor circuit;a photoelectric conversion layer on the wiring; andan electrode on the photoelectric conversion layer,wherein at least one of the first and second semiconductor films is a crystalline silicon film,wherein each of diffraction spots of an electron beam diffraction pattern of the one of the first and second semiconductor films is substantially circular, andwherein a ratio of a minor-axis length to a major-axis length of each of the diffraction spots is in a range of 1/1 to 1/1.5.

A semiconductor device comprising:na first thin film transistor comprising a first gate electrode and a first semiconductor film over an insulating surface;an insulating film over the first thin film transistor;a second semiconductor circuit comprising a second gate electrode and a second semiconductor film over the insulating film;a wiring electrically connected to the second semiconductor circuit;a photoelectric conversion layer on the wiring; andan electrode on the photoelectric conversion layer,wherein the first gate electrode comprises a silicon and the second gate electrode comprises a silicon,wherein at least one of the first and second semiconductor films is a crystalline silicon film,wherein each of diffraction spots of an electron beam diffraction pattern of the one of the first and second semiconductor films is substantially circular, andwherein a ratio of a minor-axis length to a major-axis length of each of the diffraction spots is in a range of 1/1 to 1/1.5.

A semiconductor device comprising:na first thin film transistor comprising a first gate electrode and a first semiconductor film over an insulating surface;an insulating film over the first thin film transistor;a second semiconductor circuit comprising a second gate electrode and a second semiconductor film over the insulating film;a wiring electrically connected to the second semiconductor circuit;a photoelectric conversion layer on the wiring; andan electrode on the photoelectric conversion layer,wherein the first gate electrode comprises a silicon and the second gate electrode comprises a metal film,wherein at least one of the first and second semiconductor films is a crystalline silicon film,wherein each of diffraction spots of an electron beam diffraction pattern of the one of the first and second semiconductor films is substantially circular, andwherein a ratio of a minor-axis length to a major-axis length of each of the diffraction spots is in a range of 1/1 to 1/1.5.