Inventor

Toru Mitsuki

Inventor

Kanagawa, JP

Overview

1999–2013

Patent span

Electricity

Primary field (CPC H)

Patents· 50 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices47%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1031%

G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein15%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%

B23KSoldering or unsoldering1%

PatentTitleYear

8,384,084'Semiconductor thin film and semiconductor device'2013 7,928,438'Semiconductor thin film and semiconductor device'2011 7,772,592'Semiconductor thin film and semiconductor device'2010 7,618,904'Method of manufacturing a semiconductor device'2009 7,573,110'Method of fabricating semiconductor devices'2009 7,538,011'Method of manufacturing a semiconductor device'2009 7,503,975'Semiconductor device and fabrication method therefor'2009 7,485,553'Process for manufacturing a semiconductor device'2009 7,459,354'Method for manufacturing a semiconductor device including top gate thin film transistor and method for manufacturing an active matrix device including top gate thin film transistor'2008 7,368,335'Semiconductor device and method of manufacturing the same'2008 7,326,604'Semiconductor device and method of manufacturing the same'2008 7,316,947'Method of manufacturing a semiconductor device'2008 7,307,282'Thin film transistors and semiconductor device'2007 7,307,007'Semiconductor device'2007 7,306,982'Method of manufacturing a semiconductor device'2007 7,297,978'Semiconductor thin film and semiconductor device'2007 7,202,119'Method of manufacturing semiconductor device'2007 7,196,400'Semiconductor device with enhanced orientation ratio and method of manufacturing same'2007 7,169,689'Method of manufacturing a semiconductor device'2007 7,160,784'Method of manufacturing a semiconductor film with little warp'2007 7,122,450'Process for manufacturing a semiconductor device'2006 7,052,943'Method of manufacturing a semiconductor device'2006 7,034,337'Semiconductor device and method of manufacturing the same'2006 7,022,590'Method for forming a semiconductor device using crystals of crystal growth'2006 6,979,632'Fabrication method for thin-film semiconductor'2005 6,956,235'Semiconductor device'2005 6,872,638'Method of manufacturing a semiconductor device'2005 6,830,994'Method of manufacturing a semiconductor device having a crystallized semiconductor film'2004 6,828,179'Semiconductor device and method for manufacturing same'2004 6,828,587'Semiconductor device'2004 6,822,262'Semiconductor thin film and semiconductor device'2004 6,812,081'Method of manufacturing semiconductor device'2004 6,808,968'Method of manufacturing a semiconductor device'2004 6,787,807'Semiconductor device'2004 6,770,518'Method for manufacturing a semiconductor device'2004 6,720,575'Semiconductor device with a semiconductor layer over a surface having a recess pitch no smaller than 0.3 microns'2004 6,703,265'Semiconductor device and method of manufacturing the same'2004 6,693,299'Semiconductor device and method of manufacturing the same'2004 6,690,068'Thin film transistors and semiconductor device'2004 6,635,929'Uniform thin film semiconductor device'2003 6,515,299'Semiconductor device with rod like crystals and a recessed insulation layer'2003 6,506,636'Method of manufacturing a semiconductor device having a crystallized amorphous silicon film'2003 6,495,886'Semiconductor thin film and semiconductor device'2002 6,388,270'Semiconductor device and process for producing same'2002 6,337,235'Semiconductor device and manufacturing method thereof'2002 6,326,249'Semiconductor device and process for producing same'2001 6,294,815'Semiconductor device'2001 6,107,639'Semiconductor device with rod like crystals and a recessed insulation layer'2000 6,087,679'Semiconductor thin film and semiconductor device'2000 5,966,596'Method of fabricating semiconductor devices by crystallizing amorphous silicon with nickel'1999

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1999–2013Patents assigned to SEMICONDUCTOR ENERGY LAB (49)· patent assignee history

1999–2009Based in Kanagawa, JP· patent location history

2004–2013Based in Atsugi, JP· patent location history

2006–2007Based in Tochigi, JP· patent location history

2013Patents assigned to MITSUKI TORU (1)· patent assignee history

2013Patents assigned to MIYANAGA AKIHARU (1)· patent assignee history

2013Patents assigned to OGATA YASUSHI (1)· patent assignee history

2013Patents assigned to OHTANI HISASHI (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SEMICONDUCTOR ENERGY LAB	49	1999–2013
MITSUKI TORUself	1	2013
MIYANAGA AKIHARU	1	2013
OGATA YASUSHI	1	2013
OHTANI HISASHI	1	2013

Locations

Location	Patents	Span
Kanagawa, JP	33	1999–2009
Atsugi, JP	15	2004–2013
Tochigi, JP	2	2006–2007