›4.↳ 2The process of claim 2 wherein said particles are selected from the group consisting of neutral molecules, charged molecules, atoms, and electrons.d3
The process of claim 2 wherein said particles are selected from the group consisting of neutral molecules, charged molecules, atoms, and electrons.
›5.↳ 2The process of claim 2 wherein said particles are energetic.d3+1
The process of claim 2 wherein said particles are energetic.
›6.↳ 5The process of claim 5 wherein said energetic particles have sufficient kinetic energy to penetrate through said surface to said selected depth undern…d4
The process of claim 5 wherein said energetic particles have sufficient kinetic energy to penetrate through said surface to said selected depth underneath said surface.
›7.↳ 2The process of claim 2 wherein said step of providing energy sustains said controlled cleaving action to remove said material from said substrate to p…d3
The process of claim 2 wherein said step of providing energy sustains said controlled cleaving action to remove said material from said substrate to provide a film of material.
›8.↳ 2The process of claim 2 wherein said step of providing energy increases a controlled stress in said material and sustains said controlled cleaving acti…d3
The process of claim 2 wherein said step of providing energy increases a controlled stress in said material and sustains said controlled cleaving action to remove said material from said substrate to provide a film of material.
›9.↳ 2The process of claim 2 further comprising a step of providing additional energy to said substrate to sustain said controlled cleaving action to remove…d3
The process of claim 2 further comprising a step of providing additional energy to said substrate to sustain said controlled cleaving action to remove said material from said substrate to provide a film of material.
›10.↳ 2The process of claim 2 further comprising a step of providing additional energy to said substrate to increase a controlled stress in said material and…d3
The process of claim 2 further comprising a step of providing additional energy to said substrate to increase a controlled stress in said material and to sustain said controlled cleaving action to remove said material from said substrate to provide a film of material.
›11.↳ 2The process of claim 2 wherein said introducing step forms damage selected from the group consisting of atomic bond damage, bond substitution, weakeni…d3+2
The process of claim 2 wherein said introducing step forms damage selected from the group consisting of atomic bond damage, bond substitution, weakening, and breaking bonds of said substrate at said selected depth.
›12.↳ 11The process of claim 11 wherein said damage causes stress to said substrate material at said selected depth.d4
The process of claim 11 wherein said damage causes stress to said substrate material at said selected depth.
›13.↳ 11The process of claim 11 wherein said damage reduces an ability of said substrate material to withstand stress without a possibility of a cleaving of s…d4
The process of claim 11 wherein said damage reduces an ability of said substrate material to withstand stress without a possibility of a cleaving of said substrate material.
›14.↳ 2The process of claim 2 wherein said propagating cleave front is selected from a single cleave front or multiple cleave fronts.d3
The process of claim 2 wherein said propagating cleave front is selected from a single cleave front or multiple cleave fronts.
›15.↳ 2The process of claim 2 wherein said introducing step causes stress of said material region at said selected depth by a presence of said particles at s…d3
The process of claim 2 wherein said introducing step causes stress of said material region at said selected depth by a presence of said particles at said selected depth.
›16.↳ 2The process of claim 2 wherein said devices comprise capacitors.d3
The process of claim 2 wherein said devices comprise capacitors.
›17.↳ 2The process of claim 2 wherein said devices comprise resistors.d3
The process of claim 2 wherein said devices comprise resistors.
›18.↳ 2The process of claim 2 wherein said devices comprise transistors.d3
The process of claim 2 wherein said devices comprise transistors.
›19.↳ 2The process of claim 2 wherein said energy is provided by a source selected from the group consisting of a thermal source, a thermal sink, a mechanica…d3
The process of claim 2 wherein said energy is provided by a source selected from the group consisting of a thermal source, a thermal sink, a mechanical source, a chemical source, and an electrical source.
›20.↳ 2The process of claim 2 wherein said step of introducing is a step(s) of beam line ion implantation.d3
The process of claim 2 wherein said step of introducing is a step(s) of beam line ion implantation.
›21.↳ 2The process of claim 2 wherein said step of introducing is a step(s) of plasma immersion ion implantation.d3
The process of claim 2 wherein said step of introducing is a step(s) of plasma immersion ion implantation.
›22.↳ 2The process of claim 2 further comprising a step of joining said surface of said substrate to a surface of a target substrate to form a stacked assemb…d3
The process of claim 2 further comprising a step of joining said surface of said substrate to a surface of a target substrate to form a stacked assembly before said providing step.
