Inventor

Nathan W. Cheung

Inventor
Albany, CA, US

Overview

65→
Patents
1999–2015
Patent span
Electricity
Primary field (CPC H)

Patents· 65 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1024%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1023%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems16%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests14%
Y10TTechnical subjects covered by former us classification13%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation2%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution2%
C23CCoating metallic material2%
H01JElectric discharge tubes or discharge lamps1%
H01LSemiconductor devices1%
PatentTitleYear
9,159,605'Controlled process and resulting device'20158,835,282'Controlled process and resulting device'20148,153,892'Internal light trapping method and structure using porous monocyrstalline silicon films for photovoltaic applications'20128,153,887'Method and structure for hydrogenation of silicon substrates with shaped covers'20128,148,629'Method and structure for hydrogenation of porous monocrystalline silicon substrates'20128,143,511'Texture process and structure for manufacture of composite photovoltaic device substrates'20128,143,514'Method and structure for hydrogenation of silicon substrates with shaped covers'20128,012,852'Controlled process and resulting device'20117,846,818'Controlled process and resulting device'20107,781,305'Controlled cleaving process'20107,776,717'Controlled process and resulting device'20107,759,217'Controlled process and resulting device'20107,470,600'Method and device for controlled cleaving process'20087,410,887'Controlled process and resulting device'20087,371,660'Controlled cleaving process'20087,348,258'Method and device for controlled cleaving process'20087,221,455'Integrated, fluorescence-detecting microanalytical system'20077,160,790'Controlled cleaving process'20076,890,838'Gettering technique for wafers made using a controlled cleaving process'20056,790,747'Method and device for controlled cleaving process'20046,632,724'Controlled cleaving process'20036,582,999'Controlled cleavage process using pressurized fluid'20036,558,802'Silicon-on-silicon hybrid wafer assembly'20036,548,382'Gettering technique for wafers made using a controlled cleaving process'20036,534,381'Method for fabricating multi-layered substrates'20036,528,391'Controlled cleavage process and device for patterned films'20036,511,899'Controlled cleavage process using pressurized fluid'20036,486,041'Method and device for controlled cleaving process'20026,458,672'Controlled cleavage process and resulting device using beta annealing'20026,420,242'Separation of thin films from transparent substrates by selective optical processing'20026,413,837'Controlled cleavage process and device for patterned films'20026,391,740'Generic layer transfer methodology by controlled cleavage process'20026,344,404'Method of separation films from bulk substrates by plasma immersion ion implantation'20026,335,263'Method of forming a low temperature metal bond for use in the transfer of bulk and thin film materials'20026,335,264'Controlled cleavage thin film separation process using a reusable substrate'20026,321,134'Clustertool system software using plasma immersion ion implantation'20016,294,814'Cleaved silicon thin film with rough surface'20016,291,313'Method and device for controlled cleaving process'20016,290,804'Controlled cleavage process using patterning'20016,291,314'Controlled cleavage process and device for patterned films using a release layer'20016,291,326'Pre-semiconductor process implant and post-process film separation'20016,284,631'Method and device for controlled cleaving process'20016,265,328'Wafer edge engineering method and device'20016,248,649'Controlled cleavage process and device for patterned films using patterned implants'20016,245,161'Economical silicon-on-silicon hybrid wafer assembly'20016,207,005'Cluster tool apparatus using plasma immersion ion implantation'20016,187,110'Device for patterned films'20016,184,111'Pre-semiconductor process implant and post-process film separation'20016,162,705'Controlled cleavage process and resulting device using beta annealing'20006,159,824'Silicon-on-silicon wafer bonding process using a thin film blister-separation method'20006,159,825'Controlled cleavage thin film separation process using a reusable substrate'20006,155,909'Controlled cleavage system using pressurized fluid'20006,153,524'Cluster tool method using plasma immersion ion implantation'20006,146,979'Pressurized microbubble thin film separation process using a reusable substrate'20006,103,599'Planarizing technique for multilayered substrates'20006,083,324'Gettering technique for silicon-on-insulator wafers'20006,071,795'Separation of thin films from transparent substrates by selective optical processing'20006,048,411'Silicon-on-silicon hybrid wafer assembly'20006,033,974'Method for controlled cleaving process'20006,027,988'Method of separating films from bulk substrates by plasma immersion ion implantation'20006,013,563'Controlled cleaning process'20006,013,567'Controlled cleavage process using pressurized fluid'20006,010,579'Reusable substrate for thin film separation'20005,994,207'Controlled cleavage process using pressurized fluid'19995,985,742'Controlled cleavage process and device for patterned films'1999

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1999–2015Patents assigned to SILICON GENESIS CORP (53)· patent assignee history
1999–2015Based in Albany, CA, US· patent location history
2000–2002Patents assigned to UNIV CALIFORNIA (5)· patent assignee history
2012Patents assigned to CHAN YICK CHUEN (5)· patent assignee history
2012Patents assigned to CHEUNG NATHAN W (5)· patent assignee history
2012Patents assigned to SILICON CHINA HK LTD (5)· patent assignee history
2012Based in Wanchai, HK· patent location history
2012Based in Hong Kong, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SILICON GENESIS CORP531999–2015
CHAN YICK CHUEN52012
CHEUNG NATHAN Wself52012
SILICON CHINA HK LTD52012
UNIV CALIFORNIA52000–2002
Locations
LocationPatentsSpan
Albany, California, US601999–2015
Wanchai, HK42012
Hong Kong, CN12012