Method of manufacturing a semiconductor device
Published 4 Oct 2012 · application patented
Assignee: Mitsubishi Electric Corporation
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Inventors: Kazuo Kobayashi · Examiner: Julia Slutsker · AU 2891 · TC 2800
Life of the application
8 dated eventsAbstract
A method of manufacturing a semiconductor device according to the present invention includes the steps of: (a) introducing hydrogen and oxygen on a SiC substrate; and (b) subjecting the hydrogen and the oxygen to a combustion reaction on the SiC substrate to form a gate oxide film being a silicon oxide film on a surface of the SiC substrate by the combustion reaction.
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4 codes- H01L21/31
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