A method of manufacturing a semiconductor device according to the present invention includes the steps of: (a) introducing hydrogen and oxygen on a SiC substrate; and (b) subjecting the hydrogen and the oxygen to a combustion reaction on the SiC substrate to form a gate oxide film being a silicon oxide film on a surface of the SiC substrate by the combustion reaction.

Claims

2 · 1 independent · depth 2

2 granted claims

›1.independentA method of manufacturing a semiconductor device, comprising the steps of:n(a) introducing hydrogen and oxygen on a SiC substrate;(b) subjecting said …+1

Classifications

4 codes

IPC · International Patent Classification

Section H — Electricity

H01L21/31

USPC · US Patent Classification

438/770438/771257/E21.282

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Pendency

0.8 y

287 days filing → grant

Office actions

non-final + final

Responses

1 RCE

Examiner

Julia Slutsker

art unit 2891 · TC 2800

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Citations: 26 back · 1 forward

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Priority chain

1 priority documents

›Priority documents — 1

Type	Document	Date
related publication	US 20120252223 A1	4 Oct 2012

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