Rlink—die to die channel interconnect configurations to improve signaling

This patent application is a U.S. National Phase Application under 35 U.S.C. § 371 of International Application No. PCT/US2016/040912, filed Jul. 2, 2016, entitled “RLINK—DIE TO DIE CHANNEL INTERCONNECT CONFIGURATIONS TO IMPROVE SIGNALING,” which designates the United States of America, the entire disclosure of which is hereby incorporated by reference in its entirety and for all purposes.

Embodiments of the invention are related in general, to die to die channel interconnect configurations to improve signaling (e.g., for improved signal connections and transmission) to and through a single ended bus data signal communication channel from one chip; through one or more semiconductor device packages; and to another electronic device or chip.

Integrated circuit (IC) chips (e.g., “chips”, “dies”, “ICs” or “IC chips”), such as microprocessors, coprocessors, graphics processors and other microelectronic devices often use package devices (“packages”) to physically and/or electronically attach the IC chip to a circuit board, such as a motherboard (or motherboard interface). The IC chip (e.g., “die”) is typically mounted within a microelectronic substrate package or package device that, among other functions, enables electrical connections such as to form a data signal communication channel between the chip and a socket, a motherboard, another chip, or another next-level component (e.g., microelectronic device). Some examples of such package devices are substrate packages, interposers, and printed circuit board (PCB) substrates upon which integrated circuit (IC) chips, next-level components or other package devices may be attached, such as by solder bumps.

There is a need in the field for an inexpensive and high throughput process for manufacturing such chips and packages. In addition, the process could result in a high chip yield, a high package device yield, and an improved data signal communication channel between the chip and one or more package device(s); or between the chip and a next-level component or chip attached to one or more package device(s). In some cases, there is a needed in the field for a chip and one or more package device(s) having better components for providing stable and clean high frequency transmit and receive data signals through a data signal communication channel between its signal transmit or receive circuits, through one or more packages, and to signal receive or transmit circuits of another next-level component or chip attached to the package(s).

The embodiments of the invention are illustrated by way of example and not by way of limitation in the figures of the accompanying drawings in which like references indicate similar elements. It should be noted that references to “an” or “one” embodiment of the invention in this disclosure are not necessarily to the same embodiment, and they mean at least one.

FIG. 1 is a schematic top perspective view of a conductive material ground isolation webbing structure semiconductor device package upon which at least one integrated circuit (IC) chip or “die” may be attached.

FIG. 2A is a schematic cross-sectional side view of FIG. 1 showing ground webbing structures as dashed “ - - - ” lines and showing data signal receive and transmit interconnect stacks.

FIG. 2B is a schematic cross-sectional side view of FIG. 1 showing ground webbing structures as solid lines and not showing data signal receive and transmit interconnect stacks.

FIG. 3A is a schematic cross-sectional top view of the package of FIG. 1 showing top or upper layer contacts of a top interconnect level; and shading representing one or more layers of ground webbing structure of the package.

FIG. 3B is a schematic cross-sectional top view of a ground webbing structure package showing top or upper layer ground webbing structure portion 260 of a top interconnect level of the package.

FIG. 3C is a schematic cross-sectional top view of a ground webbing structure package showing top layer or upper layer ground webbing structure portion 262 of a second interconnect level of the package.

FIG. 3E is a schematic cross-sectional top view of a ground webbing structure package showing top layer or upper layer ground webbing structure portion 266 of a fourth interconnect level of the package.

FIG. 3F is a schematic cross-sectional top view of a ground webbing structure package showing top layer or upper layer ground plane portion 368 of a fifth interconnect level of the package.

FIG. 3G is a schematic cross-sectional top view of a ground webbing structure package showing top layer or upper layer power traces (or plane) layer of a sixth interconnect level of the package.

FIG. 4 is a flow chart illustrating a process for forming a ground webbing structure package, according to embodiments described herein.

FIG. 5 is a schematic top perspective view of a conductive material ground isolation webbing structure semiconductor device package upon which two integrated circuit (IC) chip or “die” are attached.

FIG. 6 illustrates a computing device in accordance with one implementation.

FIG. 7 is schematic cross-sectional side and length views of a computing system, including ground isolated horizontal data signal transmission line package devices.

FIG. 8A is an exploded schematic cross-sectional length view of a ground isolated horizontal data signal transmission line package device of FIG. 7 showing ground isolation planes separating horizontal data signal receive and transmit layers or levels.

FIG. 8B is an exploded schematic cross-sectional side view of a ground isolated horizontal data signal transmission line package device of FIGS. 7 and 8A showing ground isolation planes separating horizontal data signal receive and transmit layers or levels.

FIG. 9A shows a plot of eye height (EH) curves and eye width (EW) curves of an eye diagram produced by testing one of horizontal data signal transmission signal lines for a range of horizontal data signal transmission line width and spacing between horizontally adjacent signal lines.

FIG. 9B shows an example of an eye-diagram for providing eye-height curves and eye-width curves of FIG. 9A .

FIG. 10 is a flow chart illustrating a process for forming a ground isolated horizontal data signal transmission line package device, according to embodiments described herein.

FIG. 11 is schematic cross-sectional side and length views of a computing system, including ground isolated horizontal data signal transmission line package devices.

FIG. 12A is an exploded schematic cross-sectional length view of a ground isolated horizontal data signal transmission line package device of FIG. 11 showing ground isolation “coaxial” lines separating horizontal data signal receive and transmit lines.

FIG. 12B is an exploded schematic cross-sectional side view of a ground isolated horizontal data signal transmission line package device of FIGS. 11 and 12A showing ground isolation “coaxial” lines separating horizontal data signal receive and transmit lines.

FIG. 13 shows a plot of eye height (EH) curves and eye width (EW) curves of an eye diagram produced by testing one of horizontal data signal transmission signal lines for a range of horizontal data signal transmission line width and ground line width, such as where spacing is constant between horizontally adjacent signal lines and ground lines.

FIG. 14 is a flow chart illustrating a process for forming a ground isolated “coaxial” line separated data signal package, according to embodiments described herein.

FIG. 15 is schematic cross-sectional side and length views of a computing system, including combined horizontal ground isolation planes and ground isolation coaxial lines separated data signal line package devices.

FIG. 16A is an exploded schematic cross-sectional length view of a ground isolated horizontal data signal transmission line package device of FIG. 15 showing combined horizontal ground isolation planes and ground isolation coaxial lines separating horizontal data signal receive and transmit lines.

FIG. 16B is an exploded schematic cross-sectional side view of a ground isolated horizontal data signal transmission line package device of FIGS. 15 and 16A showing ground isolation planes separating vertically adjacent levels of horizontal data signal receive and transmit lines; and ground isolation “coaxial” lines separating vertically adjacent and horizontally adjacent ones of horizontal data signal receive and transmit lines.

FIG. 17 shows a plot of eye height (EH) curves; and eye width (EW) curves of an eye diagram produced by testing one of horizontal data signal transmission signal lines for a range of horizontal data signal transmission line width and ground line width, such as where spacing is constant between horizontally adjacent signal lines and ground lines.

FIG. 18 is a flow chart illustrating a process for forming a combined horizontal ground isolation planes and ground isolation coaxial lines separated data signal line package, according to embodiments described herein.

FIG. 19 illustrates a computing device in accordance with one implementation.

FIG. 20A is a schematic top perspective view of a semiconductor package device upon which at least one integrated circuit (IC) chip (e.g., “die”) or other package device may be attached.

FIG. 20B is a schematic top perspective view of a semiconductor package device upon which at least one integrated circuit (IC) chip (e.g., “die”) or other package device may be attached.

FIG. 21A is a schematic cross-sectional side view of the package of FIG. 20A showing solder bumps formed on zones of upper layer ground isolation contacts and data signal contacts.

FIG. 21B is a schematic cross-sectional side view of the package of FIG. 20B showing solder bumps formed on zones of upper layer ground isolation contacts and data signal contacts.

FIG. 22A is a schematic top perspective view of a semiconductor package device upon which at least one integrated circuit (IC) chip (e.g., “die”) or other package device may be attached.

FIG. 22B is a schematic top perspective view of a semiconductor package device upon which at least one integrated circuit (IC) chip (e.g., “die”) or other package device may be attached.

FIG. 23 is a schematic cross-sectional top view of the package device of FIGS. 20A and 21A showing top or upper layer contacts of a top or typical interconnect level; and shading representing one typical layer of ground isolation plane structure of the package below level L 1 .

FIG. 24A is a schematic cross-sectional top view of the semiconductor package device of FIG. 22A showing interconnect levels below level L 1 with isolation interconnects and adjacent isolation plated through holes (PTH) forming shielding patterns in different zones.

FIG. 24B is a schematic cross-sectional top view of the semiconductor package device of FIG. 22B showing interconnect levels below level L 1 with isolation interconnects and adjacent isolation plated through holes (PTH) forming shielding patterns in different zones.

FIG. 25A is a schematic cross-sectional side view of the package of FIG. 24A showing vertically extending ground isolation signal interconnects, vertically extending adjacent plated through holes (PTHs), vertically extending separate PTHs, vertically extending separate micro-vias (uVias), and vertically extending data signal interconnects forming different shielding patterns in different zones.

FIG. 25B is a schematic cross-sectional side view of the package of FIG. 24B showing vertically extending ground isolation signal interconnects, vertically extending adjacent PTHs, and vertically extending data signal interconnects forming different shielding patterns in different zones.

FIG. 26A is a schematic top perspective view of a semiconductor package device upon which at least one integrated circuit (IC) chip (e.g., “die”) or other package device may be attached.

FIG. 26B is a schematic three dimensional cross-sectional perspective view of an electro-optical (EO) connector upon which at least one package device may be mounted.

FIG. 26C is a schematic three dimensional cross-sectional perspective view of a housing or cell of the electro-optical (EO) connector of FIG. 26B .

FIG. 27 is schematic cross-sectional side and length views of a computing system, including vertically ground isolated package devices.

FIG. 28 is schematic cross-sectional side and length views of a computing system, including vertically ground isolated package devices.

FIG. 29 illustrates a computing device in accordance with one implementation.

FIG. 30A is schematic top view of a computing system, including integrated circuit (IC) chip “on-die” interconnection features for improved signal connections and transmission through semiconductor device packages.

FIG. 30B is schematic cross-sectional side view of the computing system of FIG. 30A .

FIG. 31A is an expanded schematic cross-sectional side view of chip “on-die” interconnection feature zone of a first chip showing a chip transmit data signal “leadway” (LDW) routing trace of the computing system of FIG. 30A-B .

FIG. 31B is an expanded schematic cross-sectional side view of the chip “on-die” interconnection feature zone of FIG. 31A showing a chip isolation “leadway” (LDW) routing trace.

FIG. 32A is an expanded schematic cross-sectional side view of chip “on-die” interconnection feature zone of a first chip showing a chip receive data signal “leadway” (LDW) routing trace of the computing system of FIG. 30A-B .

FIG. 32B is an expanded schematic cross-sectional side view of the chip “on-die” interconnection feature zone of FIG. 32A showing a chip isolation “leadway” (LDW) routing trace.

FIGS. 33A and B show embodiments of data signal transmission channels having data signal LDW traces (e.g., chip “on-die” interconnection features).

FIGS. 34A and 34B show embodiments of data signal LDW routing features on an LSML layer of transmit and/or receive data chips (e.g., chip “on-die” interconnection features).

FIG. 35A shows an example of an a bar chart eye height minimum performance comparison of a data signal channel having various package channel/routing lengths between a transmit chip and a receive chip that have data signal LDW traces isolated by isolation LDW traces, as compared to such a channel excluding LDW traces.

FIG. 35B shows an example of a bar chart eye width minimum performance comparison of a data signal channels of FIG. 35A .

FIG. 36A shows an example of a bar chart eye height minimum performance comparison of a data signal channel having various transmit chip and/or receive chip isolated data signal LDW trace lengths for a channel between a transmit chip and a receive chip that have data signal LDW traces isolated by isolation LDW traces only on the transmit chip, only on the receive chip, and on both the receive and transmit chips.

FIG. 36B shows an example of a bar chart eye width minimum performance comparison of a data signal channels of FIG. 36A .

FIG. 37 shows an example of an eye diagram performance comparison of data signal channels having a 4 mm channel routing length of the package and 400 um trace lengths of isolated data signal LDW traces on both the receive and transmit chips, as compared to not having any isolated data signal LDW traces on either chip.

FIG. 38A shows a cross-sectional bottom view of some patterns of 2 chip “on-die” interconnection feature zones, each having single surface contact pitch length switched buffer (SB) data signal LDW traces, according to embodiments.

FIG. 38B shows a cross-sectional side view of some patterns of 2 chip “on-die” interconnection feature zones, each having single surface contact pitch length switched buffer (SB) data signal LDW traces, according to embodiments.

FIG. 39A shows a cross-sectional bottom view of some patterns of 4 chip “on-die” interconnection feature zones, each zone having double surface contact pitch length switched buffer (SB) data signal LDW traces, according to embodiments.

FIG. 39B shows a cross-sectional side view of some patterns of 4 chip “on-die” interconnection feature zones, each having double surface contact pitch length switched buffer (SB) data signal LDW traces, according to embodiments.

FIG. 40A shows a cross-sectional bottom view of some patterns of 6 chip “on-die” interconnection feature zones, each zone having triple surface contact pitch length switched buffer (SB) data signal LDW traces, according to embodiments.

FIG. 40B shows a cross-sectional side view of some patterns of 6 chip “on-die” interconnection feature zones, each zone having triple surface contact pitch length switched buffer (SB) data signal LDW traces, according to embodiments.

FIG. 41 illustrates a computing device in accordance with one implementation.

FIG. 42 is schematic view of a computing system including an integrated circuit (IC) chip having “on-die” inductor structures to improve signaling between (e.g., from) a data signal output contact of a data signal circuit and (e.g., to) a data signal surface contact of a chip.

FIG. 43 shows an example of a graph of impedance measured at a data signal surface contact of an IC chip having “on-die” inductor structures to improve signaling between a data signal output contact of a data signal circuit and a data signal surface contact of a chip, and a chip without the inductor structures.

FIG. 44 shows an example of a graph of insertion loss measured at a data signal surface contact of an IC chip having “on-die” inductor structures to improve signaling between a data signal output contact of a data signal circuit and a data signal surface contact of a chip, and a chip without the inductor structures.

FIGS. 45A-D show various levels of IC chip having “on-die” inductor structures to improve signaling between a data signal output contact of a data signal circuit and a data signal surface contact of a chip.

FIG. 46 illustrates a computing device in accordance with one implementation.

FIG. 47 is schematic cross-sectional side view of a computing system (e.g., computing configuration), including die to die interconnect configurations for improved signal connections and transmission through a data signal channel extending through a semiconductor device package.

FIG. 48 is schematic cross-sectional side view of a computing system (e.g., computing configuration), including die to die interconnect configurations for improved signal connections and transmission through a data signal channel extending through multiple semiconductor device packages or package devices.

FIG. 49 is schematic cross-sectional side view of a computing system 5200 (e.g., computing configuration), including die to die interconnect configurations for improved signal connections and transmission through a data signal channel extending through various configurations of multiple semiconductor device packages or package devices that may include an electro-optical (EO) connector 5310 (e.g., see FIG. 50 ) upon which at least one package device may be mounted.

FIG. 50 is schematic cross-sectional side view of a computing system 5300 (e.g., computing configuration), including die to die interconnect configurations for improved signal connections and transmission through a data signal channel extending through multiple semiconductor device packages or package devices and through an electro-optical (EO) connector 5310 upon which at least one package device may be mounted.

FIG. 51 is schematic cross-sectional side view of a computing system 5400 (e.g., computing configuration), including die to die interconnect configurations for improved signal connections and transmission through a data signal channel extending through two semiconductor device packages in a package-on-package configuration.

FIG. 52 illustrates a computing device in accordance with one implementation.

Several embodiments of the invention with reference to the appended drawings are now explained. Whenever the shapes, relative positions and other aspects of the parts described in the embodiments are not clearly defined, the scope of embodiments of the invention is not limited only to the parts shown, which are meant merely for the purpose of illustration. Also, while numerous details are set forth, it is understood that some embodiments of the invention may be practiced without these details. In other instances, well-known circuits, structures, and techniques have not been shown in detail so as not to obscure the understanding of this description.

As integrated circuit (IC) chip or die sizes shrink (e.g., see chip 108 and/or 109 ) and interconnect densities increase, physical and electrical connections require better components for providing stable and clean high frequency transmit and receive data signals between data signal circuitry (e.g., circuit 172 ) of a chip and data signal transmission surface contacts (e.g., contact 130 ) to be attached or attached to a package device (e.g., see package device 110 ) (or two physically attached package devices) upon which the IC chip is mounted or is communicating the data signals (e.g., see systems 5100 , 5200 , 5300 , 5400 and 5500 of FIGS. 47-52 ). In some cases, there is a needed for one or two chips; and the package(s) to have better data transmission interconnect features (e.g., components) for providing stable and clean high frequency transmit and receive data signals through a data signal communication channel between data signal transmit or receive circuits of one chip mounted on a package, through one or more packages, and to data signal receive or transmit circuits of another next-level component (e.g., microelectronic device) or chip attached to the package(s). This may include for providing stable and clean data signals (and optionally power and ground signals) through surface contacts (e.g., solder bump contacts) on and electrical connections between (e.g., solder bumps or solder ball grid array (BGA)) the chips and package(s). Some examples of such package devices that may be in the data signal communication channel are one (or two physically attached) of the following: substrate packages, interposers (e.g., silicon interposers), silicon bridges, organic interposers (e.g., or technology thereof), and printed circuit board (PCB) substrates upon or onto which integrated circuit (IC) chips or other package devices may be attached. In some cases, one or more of such package devices is or includes an electro-optical (EO) connector.

In some cases, the data signal communication channel includes connections between the IC chip and a package device upon or to which the IC chip is mounted, such as between the chip bottom surface (e.g., solder bump contacts) and other components of or attached to the package device. The data signal communication channel may include signals transmitted between upper level signal transmit and receive circuitry and contacts or traces of the chip that will be electrically connected through via contacts to contacts on the bottom surface of the chip. In some cases, the data signal communication channel may extend from IC chip mounted on (e.g., having a bottom surface and/or bottom surface signal contacts of a bottom surface physically soldered and attached to a top surface and/or top surface signal contacts of) a microelectronic substrate package, which is also physically and electronically connected to another package, chip or next-level component. Such data signal communication channel may be a channel for signals transmitted from the chip to contacts on the top surfaces of a package that will be electrically connected through via contacts to lower level contacts or traces of one or more the package, and from there to another chip mounted on the package(s).

In some cases, an IC chip may be mounted within a package device, such as for “flip chip” bonding or packaging, such as to form the data signal communication channel. In some cases, the IC chip may be mounted on one package device, which is also physically and electronically connected to another package device or IC chip, so that the package device can provide data signal transfer between IC chip and other package device, or between the two IC chips, such as to form a data signal communication channel. In many cases, a data signal communication channel must route hundreds or even thousands of high frequency data signals between the IC chip(s) and/or other package devices.

According to some embodiments, it is possible for die to die channel interconnect configurations to improve signaling (e.g., improve signal connections and transmission) to and through a single ended bus data signal communication channel from one chip; through one or more semiconductor device packages; and to another electronic device or chip.

Such die to die interconnect configurations may include integrated circuit (IC) chip (1) on-die inductor structures (see FIGS. 45-49 ) and (2) on-die interconnection features (see FIGS. 30-41 ) such as (a) lengths of “last silicon metal level (LSML)” data signal “leadway (LDW) routing” traces isolated between LSLM isolation traces to: (b) increase a total length of and tune data signal communication channels extending through a package between two communicating chips and (c) create switched buffer (SB) pairs of data signal channels that use the lengths of isolated data signal LDW traces to switch the locations of the pairs data signal circuitry and surface contacts for packaging connection bumps (e.g., see “on-die interconnection features” of zone 192 (or pattern 900 , pattern 1000 or pattern 1100 ) and/or zone 194 (or pattern 905 , pattern 1005 or pattern 1105 ); as well as package device (3) package device first level die bump designs directly attached to via contacts and conductive contacts extending through lower vertical levels of the package device, and ground webbing structures (see FIGS. 1-6 ), high speed horizontal data signal transmission lines (see FIGS. 7-19 ) such as extending through the package device for transmitting data between IC chips or other devices attached to the package device, (5) package device second level vertical data signal transmission interconnects (see FIGS. 20-29 ) such as extending through vertical levels of a package device, which include conductive material ground shielding attachment structures and shadow voiding for data signal contacts of package devices; vertical ground shielding structures and shield fencing of vertical data signal interconnects of package devices; and ground shielding for electro optical module connector data signal contacts and contact pins of package devices which reduce crosstalk between the data transfer contacts and vertical “signal” lines or interconnects, and (6) package device electro-optical (EO) connectors (see FIGS. 26A-C and 28 ) for improved signaling (e.g., improved signal connections and transmission) to and through a single ended bus data signal communication channel from one chip; through one or more semiconductor device packages; and to another electronic device or chip.

Such improved signaling may include or provide higher frequency and more accurate data signal transfer through a data signal communication channel between a bottom interconnect level or surface (e.g., level LV 1 ) of an IC chip mounted on a top interconnect level (e.g., level L 1 ) of the package device and (1) lower levels (e.g., levels Lj-Ll) of the package device, (2) a next-level component of (e.g., another chip mounted on) the package device, or (3) another package device mounted to the top or bottom of the package device (or a next-level component or another chip mounted on the second package device).

According to some embodiments, it is possible for die to die channel interconnect configurations to improve signaling to and through a single ended bus data signal communication channel by including on-die induction structures (see FIGS. 26A-C and 28 ); on-die interconnect features, (see FIGS. 30-41 ); on-package first level die bump designs and ground webbing structures (see FIGS. 1-6 ); on-package high speed horizontal data signal transmission lines, (see FIGS. 7-19 ); on-package vertical data signal transmission interconnects, (see FIGS. 20-29 ) and on-package electro-optical (EO) connectors (see FIGS. 26A-C and 28 ) in various system configuration including (1) die to die interconnect configurations for improved signal connections and transmission through a data signal channel extending through a semiconductor device package (e.g., see FIG. 47 ); (2) die to die interconnect configurations for improved signal connections and transmission through a data signal channel extending through multiple semiconductor device packages or package devices (e.g., see FIG. 48 ); (3) die to die interconnect configurations for improved signal connections and transmission through a data signal channel extending through various configurations of multiple semiconductor device packages or package devices that may include an electro-optical (EO) connector 5310 (e.g., see FIG. 50 ) upon which at least one package device may be mounted (e.g., see FIG. 49 ): (3) die to die interconnect configurations for improved signal connections and transmission through a data signal channel extending through multiple semiconductor device packages or package devices and through an electro-optical (EO) connector 5310 upon which at least one package device may be mounted (e.g., see FIG. 50 ); or (4) die to die interconnect configurations for improved signal connections and transmission through a data signal channel extending through two semiconductor device packages in a package-on-package configuration (e.g., see FIG. 51 ).

In some cases, such a configuration may be described as a “die to die channel interconnect configuration to improve signaling” or a “system having die to die channel interconnect configuration to improve signal connections and transmission through a semiconductor device package channel” (e.g., devices, systems and processes for forming).

In some cases, a “single ended” channel or bus includes is capable of successfully sending a high speed data signal through such a channel without using “differential” bus technology or differential bus pairs of positive and negative polarity versions of the same signals (e.g., on two wires or channels).

FIGS. 1-6 may apply to embodiments of a microprocessor package with first level die bump ground webbing structure. Such embodiments of the invention are related in general, to semiconductor device packaging and, in particular, to substrate packages and printed circuit board (PCB) substrates upon which an integrated circuit (IC) chip may be attached, and methods for their manufacture. Such a substrate package device may have a first level die bump design directly attached to via contacts and conductive contacts extending through lower vertical levels of the package device.

Integrated circuit (IC) chips (e.g., “chips”, “dies”, “ICs” or “IC chips”), such as microprocessors, coprocessors, graphics processors and other microelectronic devices often use package devices (“packages”) to physically and/or electronically attach the IC chip to a circuit board, such as a motherboard (or motherboard interface). The IC chip (e.g., “die”) is typically mounted within a microelectronic substrate package that, among other functions, enables electrical connections between the die and a socket, a motherboard, or another next-level component.

There is a need in the field for an inexpensive and high throughput process for manufacturing such packages. In addition, the process could result in a high package yield and a package of high mechanical stability. Also needed in the field, is a package having better components for providing stable and clean power, ground, and high frequency transmit and receive data signals between its top surface and other components of or attached to the package, such as from contacts on the top surfaces that will be electrically connected through via contacts to lower level contacts or traces of the package.

As integrated circuit (IC) chip or die sizes shrink and interconnect densities increase, physical and electrical connections between the IC chip and a package upon or to which the IC chip is mounted require better components for providing stable and clean power, ground, and high frequency transmit and receive data signals between the package top surface and other components of or attached to the package. Such signals may be transmitted between contacts on the top surfaces of the package that will be electrically connected through via contacts to lower level contacts or traces of the package. In some cases, the IC chip may be mounted on (e.g., physically soldered and attached to a top surface of the package) a microelectronic substrate package, which is also physically and electronically connected to the next-level component.

In some cases, the IC chip may be mounted within the package, such as for “flip chip” bonding or packaging. In some cases, the IC chip may be mounted on a microelectronic substrate package, which is also physically and electronically connected to another IC chip, so that the package can provide data signal transfer between two IC chips. Here, in many cases, the package must route hundreds or even thousands of high frequency data signals between two die. Some such packages may be or use a silicon interposer, a silicon bridge, or an organic interposer technology.

According to some embodiments, it is possible for such a package to provide higher frequency and more accurate data signal transfer between an IC chip mounted on a top interconnect level of the package and (1) lower levels of the package, (2) a next-level component mounted on the package, or (3) another IC chip mounted on the package (e.g., mounted on the top level) by including a top interconnect level (e.g., a die-bump field or a first level die bump design) with a ground webbing structure (e.g., “webbing”) of conductor material that reduces bump field crosstalk, signal type cluster-to-cluster crosstalk and in-cluster signal type crosstalk. The ground webbing structure may be spread over an area of the top interconnect level of the package and may provide ground isolation conductive material webbing that surrounds data signal contacts of the top interconnect level. The top interconnect level may have upper transmit and receive data signal contacts of the die-bump field or a first level die bump design for soldering to another device; and the ground webbing structure may be attached to (or formed as part of conductor material layer with) upper grounding contacts to reduce bump field crosstalk, signal type cluster-to-cluster crosstalk and in-cluster signal type crosstalk by surrounding each of the upper transmit and receive data signal contacts. In some cases, there may be additional lower levels of the package (below the first level) with additional ground webbing structures, such as in a second interconnect level, and a third interconnect level of the package. Such a package (e.g., with the top interconnect level having the ground webbing structure, and optionally one or more lower levels also having the ground webbing structure) may be described as a first level die bump “ground webbing structure” microprocessor package (e.g., devices, systems and processes for forming).

In some cases, each interconnect level having a ground webbing structure may have an upper (e.g., top or first) interconnect layer with upper (e.g., top or first) level ground contacts, upper level (e.g., top or first) data signal contacts, and a upper (e.g., top or first) level ground webbing structure that is directly connected (e.g., attached to, formed as part of, or electrically coupled to) to the upper level ground contacts and surrounds the upper data signal contacts. The upper contacts may be formed over and connected to via contacts or traces of a lower layer of the same interconnect level. The via contacts of the lower layer may be connected to upper contacts of a second interconnect level (which may also have webbing). In some cases, the upper data signal contacts include upper data transmit signal contacts in a data transmit signal zone (or area from above view), and upper data receive signal contacts in a data receive signal zone. In some cases, upper level power contacts are disposed adjacent to the upper level ground contacts in a power and ground zone that is between the data transmit signal zone and the data receive signal zone. In some cases, the ground webbing structure extends from the upper ground contacts (1) through a first side of the power and ground zone and into the data transmit signal zone and surrounds the upper data transmit signal contacts; and (2) through an opposite side (e.g., opposite from the first side) of the power and ground zone and into the data receive signal zone and surrounds the upper data receive signal contacts.

In some cases, the ground webbing structure package may provide a better component for the physical and electrical connections between the IC chip and a package upon or to which the IC chip is mounted. In some cases, it may increase in the stability and cleanliness of power, ground, and high frequency transmit and receive data signals transmitted between the data signal contacts on the top surfaces of the package and other components of or attached to the package that are electrically connected to the data signal contacts on the top surface through via contacts to lower level contacts or traces of the package. In some cases, it may increase the usable frequency of transmit and receive data signals transmitted between the data signal contacts on the top surfaces of the package and other components of or attached to the package, as compared to a package not having ground webbing (e.g., as compared to a package where the top interconnect layer ground webbing structure does not exist). Such an increased frequency may include data signals having a frequency of between 7 and 25 gigatransfers per second (GT/s). In some cases, GT/s may refer to a number of operations (e.g., transmission of digital data such as the data signal herein) transferring data that occur in each second in some given data transfer channel such as a channel provided by zone 102 or 104 ; or may refer to a sample rate, i.e. the number of data samples captured per second, each sample normally occurring at the clock edge. 1 GT/s is 10 9 or one billion transfers per second.

In some cases, the webbing structure package improves crosstalk (e.g., as compared to the same package but without any webbing, such as without webbing on levels L 1 -L 3 ) from very low frequency transfer such as from 50 mega hertz (MHz) to a GHz transfer level, such as greater than 40 GHz (or up to between 40 and 50 GHz). In some cases, the webbing structure package improves copper density in the package device (e.g., as compared to the same package but without any webbing, such as without webbing on levels L 1 -L 3 ). In some cases, the webbing structure package enhances the power delivery network for the input/output block (e.g., IO block such as including zone 102 and 104 ) by improving (e.g., reducing resistance of) the ground impedance (e.g., as compared to the same package but without any webbing, such as without webbing on levels L 1 -L 3 ), which helps to reduce the IO power network impedance (e.g., lower the resistance of power contacts in zones 105 and 107 ), such as due to the IO power bumps (e.g., contacts 110 in zone 105 and/or 107 ) being located inside of the signal bumps (e.g., contacts 130 and 140 ).

FIG. 1 is a schematic top perspective view of a semiconductor device package upon which at least one integrated circuit (IC) chip or “die” may be attached. FIG. 1 shows package 100 (e.g., a “package device”) having a first interconnect level L 1 with upper layer 210 having upper (e.g., top or first) layer power contacts 110 , upper layer ground isolation contacts 120 , upper layer receive data signal contacts 130 and upper layer transmit data signal contacts 140 . Level L 1 (or upper layer 210 ) may be considered to “top” layer such as a top, topmost or exposed layer (e.g., a final build-up (BU) layer, BGA, LGA, or die-backend-like layer) to which an IC chip (e.g., such as microprocessor, coprocessor, graphics processor, memory chip, modem chip, or other microelectronic chip devices), a socket, an interposer, a motherboard, or another next-level component will be mounted or directly attached.

In some cases, device 100 may represent a substrate package, an interposer, a printed circuit board (PCB), a PCB an interposer, a “package”, a package device, a socket, an interposer, a motherboard, or another substrate upon which integrated circuit (IC) chips or other package devices may be attached (e.g., such as microprocessor, coprocessor, graphics processor, memory chip, modem chip, or other microelectronic chip devices).

FIG. 1 shows package 100 having top surface 106 , such as a surface of dielectric, upon or in which are formed (e.g., disposed) power contacts 110 , grounding contacts 120 , receive signal contacts 130 and transmit contacts 140 . Power contacts 110 are shown in first row 170 as well as at certain locations along length LE 1 in row 182 .

Receive signal contacts 130 are shown in zone 102 . Zone 102 has width WE 1 and length LE 1 . Ground contacts 120 are shown in second row 172 and at certain locations along length LE 1 in seventh row 182 . Receive signal contacts 130 are shown in third row 174 , fourth row 176 , fifth row 178 , and sixth row 180 in zone 102 . In some cases, zone 102 may be described as a receive or “RX” signal cluster formed in a 4-row deep die-bump pattern.

Transmit signal contacts 140 are shown in zone 104 . Zone 104 has width WE 1 and length LE 1 . Transmit signal contacts 140 are shown in sixth row 184 , seventh row 186 , eighth row 188 , and ninth row 190 in zone 104 . In some cases, zone 104 may be described as a receive or “TX” signal cluster formed in a 4-row deep die-bump pattern. Various other appropriate patterns are considered for contacts 120 , 130 and 140 . It can be appreciated that although zone 102 and 104 are shown with the same width and length, they may have different widths and/or lengths. Each of rows 170 - 190 may be horizontally (e.g., widthwise) equidistant from each other along the direction of width WE 1 , and each of the contacts in each row may be vertically (e.g., lengthwise) equidistant from each other along length LEE

The exact size of WE 1 and LE 1 may depend on number of contacts employed within each zone (e.g., number of contacts 130 in zone 102 , or the number of contact 140 in zone 104 ). In some cases, the size of WE 1 and LE 1 may also depend on the number of zones 102 and 104 on a package device. In some cases, the number of zones 102 and 104 will be where each of those zones is part of a “unicel” or “unit cell” communication area (e.g., including zones 102 , 104 , 105 and 107 ) and there are between 2-20 such unicel areas on the surface of the package (and thus between 2-20 of each of zones 102 and 104 ). In some cases, the size of WE 1 and LE 1 can be scaled with or depend on the manufacturing or processing pitch (e.g., of the contacts).

The size of WE 1 and LE 1 may also depend on the technology capability of forming the contacts and package. In some cases, in general, the size of WE 1 and LE 1 can span from around a hundred to a couple of hundred micrometers (×E-6 meter—“um” or “microns”). In some cases, LE 1 is between 80 and 250 um. In some cases it is between 50 and 300 um. In some cases, WE 1 is between 70 and 150 um. In some cases it is between 40 and 200 um.

Rows 170 and 172 may be described as a two row wide power and ground isolation zone 105 . Zone 102 may be described as a four row wide zone of receive contacts. Zone 104 a four row wide zone of transmit contacts. Row 182 may be described as a one row wide power and ground isolation zone 107 located or formed between zone 102 and zone 104 . Zone 107 has side 181 adjacent to or facing zone 102 and opposite side 183 (e.g., opposite from side 181 ) adjacent to or facing zone 104 . In some cases, the location of zone 105 and zone 107 are reversed and the two row power and isolation zone is located between zone 102 and zone 104 ; and has sides 181 and 183 .

Zone 105 has width WE 2 and length LE 1 . Zone 107 has width WE 3 and length LE 1 . The exact size of WE 2 and WE 3 may depend on number of contacts employed within each zone (e.g., number of contacts in zone 105 , and in zone 107 ). In some cases, the size of WE 2 and WE 3 may also depend on the number of zones 105 and 107 on a package device. In some cases, the number of zones 105 and 107 will be where each of those zones is part of a “unicel” communication area (e.g., including zones 102 , 104 , 105 and 107 ) and there are between 2-20 such unicel areas on the surface of the package (and thus between 2-20 of each of zones 105 and 107 ). In some cases, the size of WE 2 and WE 3 can be scaled with or depend on the manufacturing or processing pitch (e.g., of the contacts).

The size of WE 2 and WE 3 may also depend on the technology capability of forming the contacts and package. In some cases, in general, the size of WE 2 and WE 3 can span from around tens of microns to more than a hundred um. In some cases, WE 2 is between 35 and 75 um. In some cases it is between 20 and 100 um. In some cases, WE 3 is between 15 and 30 um. In some cases it is between 8 and 40 um. It can be appreciated that although zone 105 and 107 are shown with widths WE 2 and WE 3 ; and the same length, they may have different widths and/or lengths.

In some cases, zone 107 (or zone 105 when zone 105 is located where zone 107 is shown) may be described as one (e.g., zone 107 ) or two (e.g., zone 105 ) rows of ground bumps that isolate the TX cluster (e.g., zone 104 ) and the RX cluster (e.g., zone 102 ).

The pitch width (PW) of adjacent contacts is the width distance between the center point of two adjacent contacts. In some cases, pitch PW is approximately 153 micrometers (153×E-6 meter—“um”). In some cases, pitch PW is approximately 160 micrometers. In some cases, it is between 140 and 175 micrometers. The diagonal pitch (PD) of adjacent contacts is the diagonal distance between the center of two adjacent contacts. In some cases, pitch PD is approximately 110 micrometers (110×E-6 meter—“um”). In some cases, pitch PD is approximately 130 micrometers. In some cases, it is between 100 and 140 micrometers (um). In some cases, it is between 60 and 200 micrometers. The pitch length (PL) of two adjacent contacts is the length distance between the center point of two adjacent contacts. In some cases, pitch PL is approximately 158 micrometers. In some cases, pitch PL is approximately 206 micrometers. In some cases, it is between 130 and 240 micrometers (um). In some cases, pitch PD is approximately 110 micrometers, PL is approximately 158 micrometers and PW is approximately 153 micrometers. In some cases, pitch PD is approximately 130 micrometers, PL is approximately 206 micrometers and PW is approximately 160 micrometers. In the cases above, “approximately” may represent a difference of within plus or minus 5 percent of the number stated. In other cases, it may represent a difference of within plus or minus 10 percent of the number stated.

According to embodiments, level L 1 may include upper (e.g., top, topmost or or first) layer ground webbing structure 160 (not shown in FIG. 1 ), such as shown in FIGS. 2-3 .

FIG. 2A is a schematic cross-sectional side view of the package of FIG. 1 showing ground webbing structures 160 , 162 and 164 as dashed “ - - - ” lines and showing data signal receive and transmit interconnect stacks or rows 174 and 184 . FIG. 2B is a schematic cross-sectional side view of the package of FIG. 1 showing ground webbing structures 160 , 162 and 164 as solid lines and not showing data signal receive and transmit interconnect stacks or rows 174 and 184 . FIGS. 2A-B show package 100 top or topmost (e.g., first level) interconnect level L 1 is formed over second level interconnect level L 2 , which is formed over third interconnect level L 3 , which is formed over fourth interconnect level L 4 , which is formed over fifth interconnect level L 5 , which is formed over fifth interconnect level L 6 . In FIGS. 2A-B , data signal receive interconnect stack 274 may represent the interconnect stack (e.g., upper contacts and via contacts of multiple levels of levels L 1 -L 5 ) of each of rows 174 - 180 of FIGS. 1 and 3 . In some cases, stack 274 may represent all the interconnect stack of rows 174 - 180 of FIGS. 1 and 3 . Also, in FIGS. 2A-B , data signal transmit interconnect stack 284 may represent the interconnect stack (e.g., upper contacts and via contacts of multiple levels of levels L 1 -L 5 ) of each of rows 184 - 190 of FIGS. 1 and 3 . In some cases, stack 284 may represent all the interconnect stack of rows 184 - 190 of FIGS. 1 and 3 .

FIG. 2A shows package device 100 having level L 1 which is shown with layer 210 having dielectric 103 ; contacts 110 , 120 , 130 and 140 ; and ground webbing 160 which may be directly attached to and electrically coupled to contacts 120 of layer 210 . Level L 1 is also shown with layer 212 having dielectric 103 ; and contacts 112 , 122 , 132 and 142 . Level L 2 is shown with layer 220 having contacts 110 , 120 and 130 ; ground webbing 162 which may be directly attached to and electrically coupled to contacts 120 of layer 220 ; and signal trace 148 which may be directly attached to and electrically coupled to contacts 142 of layer 212 . Level L 2 is also shown with layer 222 having dielectric 103 ; and contacts 112 , 122 and 132 . Level L 3 is shown with layer 230 having contacts 110 , 120 and 130 ; ground webbing 164 which may be directly attached to and electrically coupled to contacts 120 of layer 230 ; and ground trace (or plane) 128 which may be directly attached to and electrically coupled to contacts 122 of layer 222 . Level L 3 is also shown with layer 232 having dielectric 103 ; and contacts 112 , 122 and 132 . Level L 4 is shown with layer 240 having contacts 110 and 120 ; and signal trace 138 which may be directly attached to and electrically coupled to contacts 132 of layer 232 . Level L 4 is also shown with layer 242 having dielectric 103 ; and contacts 112 and 122 . Level L 5 is shown with layer 250 having contacts 110 ; and ground trace (or plane) 128 which may be directly attached to and electrically coupled to contacts 122 of layer 242 . Level L 5 is also shown with layer 252 having dielectric 103 ; and contacts 112 . Level L 6 is shown with a layer having power trace (or plane) 118 which may be directly attached to and electrically coupled to contacts 112 of layer 252 . Level L 6 may include other structure or various layers not shown, such as described below.

Below level L 6 , package 100 may include various interconnect layers, packaging layers, conductive features (e.g., electronic devices, interconnects, layers having conductive traces, layers having conductive vias), layers having dielectric material and other layers as known in the industry for a semiconductor device package. In some cases, the package may be cored or coreless. In some cases, the package includes features formed according to a standard package substrate formation processes and tools such as those that include or use: lamination of dielectric layers such as ajinomoto build up films (ABF), laser or mechanical drilling to form vias in the dielectric films, lamination and photolithographic patterning of dry film resist (DFR), plating of conductive traces (CT) such as copper (Cu) traces, and other build-up layer and surface finish processes to form layers of electronic conductive traces, electronic conductive vias and dielectric material on one or both surfaces (e.g., top and bottom surfaces) of a substrate panel or peel able core panel. The substrate may be a substrate used in an electronic device package or a microprocessor package.

In some cases, any or all of levels L 1 -L 5 may also include such structures noted above for package 100 , thought not shown in FIGS. 1-3 . In some cases, the contacts and/or traces of levels L 1 -L 5 are electrically connected to (e.g., physically attached to or formed onto) the conductive structures noted above for package 100 .

Row 170 is shown having power interconnect levels L 1 -L 5 . In some embodiments, row 170 has fewer or more interconnect levels than L 1 -L 5 . Each of levels L 1 -L 5 may have at least one power interconnect stack with a power upper contact 110 (e.g., of an upper of the level such as layer 210 of level L 1 ) formed over or onto a power via contact 112 (e.g., of a lower layer of the level such as layer 212 of level L 1 ) such that the two contacts are directly attached (e.g., touching) and electrically coupled to each other. Each layers power via contact 112 (e.g., of the lower layer of the level) may be formed over or onto an power upper contact 110 of the level below (e.g., of an upper layer of the level below such as layer 220 of level L 2 ), such that the two contacts are directly attached (e.g., touching) and electrically coupled to each other. Each power upper contact 110 may have width, or diameter W 1 and height H 1 . Each power via contact 112 may have top width W 2 , bottom width W 3 , and height H 2 . These widths and height may be the same for each power upper contact and power via contact of interconnect levels L 1 -L 5 . Power via contact 112 of level L 5 (e.g., of the lowest power via level of an interconnect stack) is formed over or onto power signal trace 118 such that the via contact is directly attached (e.g., touching) and electrically coupled to power signal trace 118 . Trace 118 has height H 4 and width W 6 . It can be appreciated that power contacts 110 and 112 ; and trace 118 may have width and/or heigh less than or greater than those mentioned above.

Zones 102 , 104 , 105 and 107 (and levels L 1 -L 5 ) may have features having standard package pitch as known for a semiconductor die package, chip package; or for another device (e.g., interface, PCB, or interposer) typically connecting a die (e.g., IC, chip, processor, or central processing unit) to a socket, a motherboard, or another next-level component.

In some cases, height H 1 may be approximately 15 micrometers (15×E-6 meter—“um”) and width W 1 is between 75 and 85 um. In some cases, height H 1 is between 10 and 20 micrometers (um). In some cases, it is between 5 and 30 micrometers. In some cases, width W 1 is between 70 and 90 micrometers (um). In some cases, it is between 60 and 110 micrometers. It can be appreciated that height H 1 may be an appropriate height of a conductive material contacts formed on a top layer of or within a package device, that is less than or greater than those mentioned above.

In some cases, H 2 is approximately 25 micrometers, width W 2 is between 65 and 75 um, and width W 3 is between 30 and 50 um. In some cases, height H 2 is between 20 and 30 micrometers (um). In some cases, it is between 10 and 40 micrometers. It can be appreciated that height H 1 may be an appropriate height of a conductive material via contact within a package device, that is less than or greater than those mentioned above. In some cases, width W 2 is between 60 and 85 micrometers (um). In some cases, it is between 50 and 90 micrometers. In some cases, width W 3 is between 20 and 50 micrometers (um). In some cases, it is between 10 and 60 micrometers.

In some cases, height H 4 may be approximately 15 micrometers (15×E-6 meter—“um”) and width W 6 is between 1 millimeter (mm) and 20 mm. In some cases, height H 4 is between 10 and 20 micrometers (um). In some cases, it is between 5 and 30 micrometers. It can be appreciated that height H 4 may be an appropriate height of a conductive material grounding plane or webbing within a package device for reducing cross talk and for isoating signal contacts, that is less than or greater than those mentioned above. In some cases, width W 6 can span an entire width of a die or chip.

Row 172 is shown having ground isolation interconnect levels L 1 -L 4 . In some embodiments, row 172 has fewer or more interconnect levels than L 1 -L 4 . Each of levels L 1 -L 4 may have at least one ground isolation interconnect stack with an ground isolation upper contact 120 (e.g., of an upper of the level such as layer 210 of level L 1 ) formed over or onto a ground isolation via contact 122 (e.g., of a lower layer of the level such as layer 212 of level L 1 ) such that the two contacts are directly attached (e.g., touching) and electrically coupled to each other. Each layers ground isolation via contact 122 (e.g., of the lower layer of the level) may be formed over or onto a ground isolation upper contact 120 of the level below (e.g., of an upper layer of the level below such as layer 220 of level L 2 ), such that the two contacts are directly attached (e.g., touching) and electrically coupled to each other. Each ground isolation upper contact 120 may have width, or diameter W 1 and height H 1 . Each ground isolation via contact 122 may have top width W 2 , bottom width W 3 , and height H 2 . These widths and height may be the same for each ground isolation upper contact and ground isolation via contact of interconnect levels L 1 -L 4 . Ground isolation via contact 122 of level L 4 (e.g., of the lowest ground isolation via level of an interconnect stack) is formed over or onto ground isolation signal trace 128 such that the via contact is directly attached (e.g., touching) and electrically coupled to ground isolation signal trace 128 . Trace 128 has height H 4 and may have a width such as width W 6 . It can be appreciated that ground isolation contacts 120 and 122 ; and trace 128 may have width and/or heigh less than or greater than those mentioned above.

Row 174 is shown having receive data signal interconnect levels L 1 -L 3 . In some embodiments, row 174 has fewer or more interconnect levels than L 1 -L 3 . Each of levels L 1 -L 3 may have at least one receive data signal interconnect stack with an receive data signal upper contact 130 (e.g., of an upper of the level such as layer 210 of level L 1 ) formed over or onto a receive data signal via contact 132 (e.g., of a lower layer of the level such as layer 212 of level L 1 ) such that the two contacts are directly attached (e.g., touching) and electrically coupled to each other. Each layers receive data signal via contact 132 (e.g., of the lower layer of the level) may be formed over or onto a receive data signal upper contact 130 of the level below (e.g., of an upper layer of the level below such as layer 220 of level L 2 ), such that the two contacts are directly attached (e.g., touching) and electrically coupled to each other. Each receive data signal upper contact 130 may have width, or diameter W 1 and height H 1 . Each receive data signal via contact 132 may have top width W 2 , bottom width W 3 , and height H 2 . These widths and height may be the same for each receive data signal upper contact and receive data signal via contact of interconnect levels L 1 -L 3 . Receive data signal via contact 132 of level L 3 (e.g., of the lowest receive data signal via level of an interconnect stack) is formed over or onto receive data signal trace 138 such that the via contact is directly attached (e.g., touching) and electrically coupled to receive data signal trace 138 . Trace 138 has height H 4 and may have a width such as width W 6 . It can be appreciated that receive data signal contacts 130 and 132 ; and trace 138 may have width and/or heigh less than or greater than those mentioned above.

FIGS. 2A-B show only stack 274 of rows 174 - 180 . However, it can be appreciated that stack 274 can represent any one of rows 174 - 180 . In some cases, stack 274 of FIGS. 2A-B is an example of all the rows 174 - 180 of FIGS. 1 and 3 .

Row 182 is shown having ground isolation interconnect levels L 1 -L 2 . In some embodiments, row 182 has fewer or more interconnect levels than L 1 -L 2 . In some embodiments, row 182 has power interconnect stacks in levels L 1 -L 2 as well as ground isolation interconnect stacks in levels L 1 -L 2 . Each of levels L 1 -L 2 may have at least one ground isolation interconnect stack with an ground isolation upper contact 120 formed over or onto a ground isolation via contact 122 , which is formed over or onto an ground isolation upper contact 120 of the layer below, as noted for row 172 . These may be formed as noted for row 172 . Ground isolation via contact 122 of level L 2 (e.g., of the lowest ground isolation via level of an interconnect stack) is formed over or onto ground isolation signal trace 128 as noted for row 172 . It can be appreciated that ground isolation contacts 120 and 122 ; and trace 128 of row 182 may have width and/or height as noted for row 172 .

Row 184 is shown having transmit data signal interconnect level L 1 . In some embodiments, row 184 has more interconnect levels than L 1 . Level L 1 may have at least one transmit data signal interconnect stack with an transmit data signal upper contact 140 (e.g., of an upper of the level such as layer 210 of level L 1 ) formed over or onto a transmit data signal via contact 142 (e.g., of a lower layer of the level such as layer 212 of level L 1 ) such that the two contacts are directly attached (e.g., touching) and electrically coupled to each other. Each layers transmit data signal via contact 142 (e.g., of the lower layer of the level) may be formed over or onto a transmit data signal upper contact 140 of the level below (e.g., of an upper layer of the level below such as layer 220 of level L 2 ), such that the two contacts are directly attached (e.g., touching) and electrically coupled to each other. Each transmit data signal upper contact 140 may have width, or diameter W 1 and height H 1 . Each transmit data signal via contact 142 may have top width W 2 , bottom width W 3 , and height H 2 . These widths and height may be the same for each transmit data signal upper contact and transmit data signal via contact of any other transmit data signal layers exist in row 184 . Transmit data signal via contact 142 of level L 1 (e.g., of the lowest transmit data signal via level of an interconnect stack) is formed over or onto transmit data signal trace 148 such that the via contact is directly attached (e.g., touching) and electrically coupled to transmit data signal trace 148 . Trace 148 has height H 4 and may have a width such as width W 6 . It can be appreciated that transmit data signal contacts 140 and 142 ; and trace 148 may have width and/or height less than or greater than those mentioned above.

FIGS. 2A-B show only stack 284 of rows 184 - 190 . However, it can be appreciated that stack 284 can represent any one of rows 184 - 190 . In some cases, stack 284 and FIGS. 2A-B is an example of all the rows 184 - 190 of FIGS. 1 and 3 .

FIGS. 2A-B show pitch width PW between rows 170 and 172 . It can be appreciated that the same pitch width may apply to each of adjacent rows of rows 172 - 190 .

FIG. 2B shows dielectric portions 103 a in layer 210 between any of (e.g., occupying space not occupied by) upper contacts 110 , 120 , 130 , 140 , traces, and webbing 160 of layer 210 . It also shows dielectric portions 103 b in layer 212 between any of via contacts 112 , 122 , 132 , 142 and traces of layer 212 . It also shows dielectric portions 103 c in layer 220 between any of upper contacts 110 , 120 , 130 , 140 , traces, and webbing 162 of layer 220 . It also shows dielectric portions 103 d in layer 222 between any of via contacts 112 , 122 , 132 , 142 and traces of layer 222 . It also shows dielectric portions 103 e in layer 230 between any of upper contacts 110 , 120 , 130 , 140 , traces, and webbing 164 of layer 230 . It also shows dielectric portions 103 f in layer 232 between any of via contacts 112 , 122 , 132 , 142 and traces of layer 232 . Dielectrics 103 a , 103 b , 103 c , 103 d , 103 e , and 103 f may be a dielectric as described for dielectric 103 .

According to some embobiments, contacts 110 , 120 , 130 and 140 ; traces; dielectric layers or portions; and webbing 160 of level L 1 may be described as “first level” power contacts 110 , ground isolation contacts 120 , data signal receive contacts 130 and data signal transmit contacts 140 ; traces; dielectric layers or portions; and webbing, respectively. For example, contact 120 of level L 1 may be described as a “first level ground contact”. Also, according to some embodiments, via contacts 112 , 122 , 132 and 142 ; traces; dielectric layers or portions; and webbing 162 of level L 2 may be described as “second level” power via contacts 112 , ground isolation via contacts 122 , data signal receive via contacts 132 and data signal transmit via contacts 142 ; traces; dielectric layers or portions; and webbing, respectively. For example, via contact 122 of level L 1 may be described as a “first level ground via contact”. In some cases, these descriptions also repeat for level L 2 (e.g., “second level . . . contacts”), level L 3 (“third level . . . contacts”), level L 4 (e.g., “fourth level . . . contacts”), and level L 5 (“fifth level . . . contacts”).

FIG. 3A is a schematic cross-sectional top view of the package of FIG. 1 showing top or upper layer contacts of a top or typical interconnect level; and shading representing one typical layer of ground webbing structure of the package. FIG. 3A shows package 100 having zone 102 with contacts 130 in rows 174 - 180 . It shows zone 104 having contacts 140 in rows 184 - 190 . It shows zone 105 having contacts 110 in row 170 and contacts 120 in row 172 . It shows zone 107 having contacts 110 and 120 in row 182 .

FIG. 3A shows shading 310 representing ground webbing structure 310 that may represent all or a portion of structures 160 , 162 or 164 at levels L 1 , L 2 or L 3 . FIG. 3A shows webbing structure 310 such as a layer of solid conductor material extending between any or all of (e.g., occupying space not occupied by) width W 4 of dielectric portions 103 a surrounding upper contacts 110 , 130 , 140 , traces, and ties (e.g., in layer 210 ).

In some cases, ground webbing structures 160 , 162 , and 164 may be described as conductive ground webbing structures in die-bump fields or zones 102 , 104 , 105 and 107 to reduce bump field crosstalk, cluster-to-cluster crosstalk and in-cluster crosstalk of zones 102 , 104 , 105 and 107 . This is described further below.

Row 170 shows locations 340 such as areas between contacts 110 and surrounding ground webbing structure 310 where no webbing exists. Examples of locations 340 are indicated by no shading color. For example, the brightest areas of FIG. 3A , around contacts 110 of row 170 , do not have any ground webbing structure for a distance of W 4 around each contact which is between the edge of a contact and the inner edge of all of the webbing structure 310 . Here, webbing 310 surrounds contacts 110 in row 170 at a distance of width W 4 (e.g., are width W 4 away from the edges of contacts 110 ). In some cases, width W 4 is approximately 12 micrometers. In some cases, it is between 10 and 20 micrometers (um). In some cases, it is between 8 and 30 micrometers. In some cases, it is between 12 and 50 micrometers.

Rows 172 and 182 show areas in rows 172 and 182 that have structure 310 , such as where one of webbings 160 , 162 or 164 exist. Examples of structure 310 are indicated by the shading.

Also, row 182 shows locations 320 such as an area between contacts 110 and surrounding ground webbing structure 310 or where no webbing exists. Examples of locations 320 are indicated by no shading color. For example, the brightest areas of FIG. 3A , around contacts 110 of row 182 , do not have any ground webbing structure for a distance of W 4 around each contact which is between the edge of a contact and the inner edge of all of the webbing structure 310 . Here, webbing 310 surrounds contacts 110 in row 182 at a distance of width W 4 (e.g., are width W 4 away from the edges of contacts 110 ).

Zone 102 (e.g., rows 174 - 180 ) shows structure 310 , such as where one of webbings 160 , 162 or 164 exist. Examples of structure 310 are indicated by the shading. Zone 102 (e.g., rows 174 - 180 ) also show locations 330 such as an area between contacts 130 and surrounding ground webbing structure where no webbing exists. Examples of locations 330 are indicated by no shading color. For example, the brightest areas of FIG. 3A , around contacts 130 of rows 174 - 180 , do not have any ground webbing structure for a distance of W 4 around each contact which is between the edge of a contact and the inner edge of all of the webbing structure 310 . Here, webbing 310 surrounds contacts 130 in rows 174 - 180 at a distance of width W 4 (e.g., are width W 4 away from the edges of contacts 130 ).

Zone 104 (e.g., rows 184 - 190 ) shows structure 310 , such as where one of webbings 160 , 162 or 164 exist. Zone 104 (e.g., rows 184 - 190 ) also shows locations 320 such as an area between contacts 140 and surrounding ground webbing structure where no webbing exists. Examples of locations 320 are indicated by no shading color. For example, the brightest areas of FIG. 3A , around contacts 140 of rows 184 - 190 , do not have any ground webbing structure for a distance of W 4 around each contact which is between the edge of a contact and the inner edge of all of the webbing structure 310 . Here, webbing 310 surrounds contacts 140 in rows 184 - 190 at a distance of width W 4 (e.g., are width W 4 away from the edges of contacts 140 ).

FIG. 3A also shows width W 8 of webbing structure 310 between side by side, adjacent contacts. W 8 may represent a width of solid conductor material or webbing of webbing 310 (e.g., representing the same for webbing 160 , 162 or 164 ) that is disposed between two side by side, adjacent contacts from a top perspective view (e.g., along pitch width PW), and that surrounds the contacts by distance W 4 . In some cases, width W 8 is approximately 12 micrometers. In some cases, it is between 10 and 20 micrometers (um). In some cases, it is between 8 and 30 micrometers. In some cases, it is between 12 and 50 micrometers. Width W 8 may exist for webbing 160 , 162 and 164 .

Next, FIG. 3A shows width W 9 of webbing structure 310 between diagonally adjacent contacts. W 9 may represent a width of solid conductor material or webbing of webbing 310 (e.g., representing the same for webbing 160 , 162 or 164 ) that is disposed between two diagonally adjacent contacts (e.g., along diagonal pitch PD), and that surrounds the contacts by distance W 4 . In some cases, width W 9 is approximately 12 micrometers. In some cases, it is between 10 and 20 micrometers (um). In some cases, it is between 8 and 30 micrometers. In some cases, it is between 12 and 50 micrometers. Width W 9 may exist for webbing 160 , 162 and 164 .

Also, FIG. 3A shows width W 10 of webbing structure 310 between upper and lower, adjacent contacts. W 10 may represent a width of solid conductor material or webbing of webbing 310 (e.g., representing the same for webbing 160 , 162 or 164 ) that is disposed between two upper and lower, adjacent contacts (e.g., along length pitch PL), and that surrounds the contacts by distance W 4 . In some cases, width W 10 is approximately 75 micrometers. In some cases, it is between 60 and 90 micrometers (um). In some cases, it is between 50 and 110 micrometers. In some cases, it is between 40 and 130 micrometers. Width W 10 may exist for webbing 160 , 162 and 164 .

FIGS. 2A-B show embodiments of ground webbing structures 160 , 162 , and 164 at levels L 1 , L 2 , and L 3 . FIG. 3A show embodiments of ground webbing structures 310 which may represent any or all of structures 160 , 162 , and 164 at levels L 1 , L 2 , and L 3 . FIGS. 2A-B show ground webbing layer 160 that may be formed along, or under top surface 106 . Ground webbing 160 has height H 5 and width W 5 . In some cases height H 5 is equal to height H 1 . Ground webbing 160 may be an upper (e.g., top or first) layer of conductive material that is formed as part of, touching, and electrically coupled to upper ground contacts 120 of upper layer 210 of level L 1 . In some cases, webbing 160 is an upper layer of conductive material that is formed during the same deposition or plating used to form upper contacts 120 of level L 1 . In some cases, webbing 160 contacts many or most of the upper contacts 120 of level L 1 . In some cases, webbing 160 contacts all of upper contacts 120 of level L 1 . Webbing structure 160 may be a layer of solid conductor material extending between all of (e.g., occupying space not occupied by) width W 4 of dielectric portions 103 a surrounding upper contacts 110 , 130 , 140 , and any traces of layer 210 .

In some cases, height H 5 may be approximately 15 micrometers (15×E-6 meter—“um”) and width W 5 is between 1 millimeter (mm) and 20 mm. In some cases, height H 5 is between 10 and 20 micrometers (um). In some cases, it is between 5 and 30 micrometers. In some cases, width W 5 can span an entire width of a die or chip.

For example, ground isolation webbing structure 160 is shown by the dashed lines (e.g., “ . . . ”) in upper layer 210 of level L 1 of FIG. 2A ; by the shaded height H 5 in FIG. 2B ; and by shading of webbing structure 310 in FIG. 3A . Structure 160 is an upper (e.g., top, topmost or or first) level L 1 (or layer 210 ) ground webbing structure. In some cases, webbing structure 160 is formed (e.g., disposed) having top surfaces that are part of or horizontally planar with surface 106 , such as by being formed with or as part of layer 210 having conductor (1) that includes contacts 110 , 120 , 130 and 140 of level L 1 ; and (2) between which dielectric 103 of layer 210 exists (having top surface 106 ). In some cases, webbing structure 160 is formed (e.g., disposed) above top surface 106 , such as where the layer of conductor is formed on or over a layer of dielectric or other material. In some cases, webbing structure 160 is formed (e.g., disposed) under top surface 106 , such as when a further layer of dielectric, solder resist, or other material is formed on level L 1 , over webbing 160 .

FIGS. 2A-B show ground webbing layer 162 formed along an upper surface of dielectric upon which upper contacts of level L 2 are formed. Ground webbing 162 has height H 5 and width W 5 . Ground webbing 162 may be an upper (e.g., top or first) layer of conductive material that is formed as part of, touching, and electrically coupled to upper ground contacts 120 of upper layer 220 of level L 2 . In some cases, webbing 162 is an upper layer of conductive material that is formed during the same deposition or plating used to form upper contacts 120 of level L 2 . In some cases, webbing 162 contacts many or most of the upper contacts 120 of level L 2 . In some cases, webbing 160 contacts all of upper contacts 120 of level L 2 . Webbing structure 162 may be a layer of solid conductor material extending between all of (e.g., occupying space not occupied by) width W 4 of dielectric portions 103 a surrounding any of upper contacts 110 , 130 , 140 , and traces 148 of layer 220 .

For example, ground isolation webbing structure 162 is shown by the dashed lines (e.g., “ - - - ”) in upper layer 220 of level L 2 of FIG. 2A ; by the shaded height H 5 in FIG. 2B ; and by shading of webbing structure 310 in FIG. 3A . Structure 162 is a second or secondmost level L 2 (or layer 220 ) ground webbing structure. In some cases, webbing structure 162 is formed (e.g., disposed) having top surfaces that are part of or horizontally planar with a top surface of level L 2 , such as by being formed with or as part of layer 220 having conductor (1) that includes upper contacts 110 , 120 , 130 and trace 148 of level L 2 ; and (2) between which dielectric 103 of layer 220 exists. In some cases, webbing structure 162 is formed (e.g., disposed) under top surface 106 , by height H 2 , such as due to having level L 1 formed over webbing 162 .

FIGS. 2A-B show ground webbing layer 164 formed along an upper surface of dielectric upon which upper contacts of level L 3 are formed. Ground webbing 164 has height H 5 and width W 5 . Ground webbing 164 may be an upper (e.g., top or first) layer of conductive material that is formed as part of, touching, and electrically coupled to upper ground contacts 120 of upper layer 230 of level L 3 . In some cases, webbing 164 is an upper layer of conductive material that is formed during the same deposition or plating used to form upper contacts 120 of level L 3 . In some cases, webbing 164 contacts many or most of the upper contacts 120 of level L 3 . In some cases, webbing 164 contacts all of upper contacts 120 of level L 3 . Webbing structure 164 may be a layer of solid conductor material extending between all of (e.g., occupying space not occupied by) width W 4 of dielectric portions 103 a surrounding any of upper contacts 110 , 130 , 140 , and traces 128 of layer 230 .

For example, ground isolation webbing structure 164 is shown by the dashed lines (e.g., “ - - - ”) in upper layer 230 of level L 3 of FIG. 2A ; by the shaded height H 5 in FIG. 2B ; and by shading of webbing structure 310 in FIG. 3A . Structure 164 is a third or thirdmost level L 3 (or layer 230 ) ground webbing structure. In some cases, webbing structure 164 is formed (e.g., disposed) having top surfaces that are part of or horizontally planar with a top surface of level L 3 , such as by being formed with or as part of layer 230 having conductor (1) that includes upper contacts 110 , 120 , 130 and trace 128 of level L 3 ; and (2) between which dielectric 103 of layer 230 exists. In some cases, webbing structure 164 is formed (e.g., disposed) under top surface 106 , by height (2×H 2 plus 2×H 1 ), such as due to having levels L 1 and L 2 formed over webbing 164 .

FIG. 3B is a schematic cross-sectional top view of a ground webbing structure package showing top or upper layer ground webbing structure portion 260 of a top interconnect level of the package. In some cases, package 300 is package 100 , such as by having zones 102 , 104 , 105 and 107 at levels L 1 -L 6 . In some cases it is a package similar to package 100 except that the ground webbing structures 160 , 162 and 164 are described as ground webbing portions 260 , 262 and 264 , respectively. In some cases it is a package similar to package 100 except that the ground webbing structures 160 , 162 and 164 are described as the combination of ground webbing portion 260 and plane 360 ; ground webbing portion 262 and plane 362 ; and ground webbing portion 264 and plane 364 , respectively.

FIG. 3B may be a top perspective view of layer 210 of device 300 . It shows layer 210 having power contacts 110 , ground contacts 120 , received signal contacts 130 , transmit signal contacts 140 , ground webbing portion 260 , and ground plane portion 360 . FIG. 3B also shows layer 210 having zone 102 with contacts 130 in rows 174 - 180 . It shows zone 104 having contacts 140 in rows 184 - 190 . It shows zone 105 having contacts 110 in row 170 and contacts 120 in row 172 . It shows zone 107 having contacts 110 and 120 in row 182 . It shows layer 210 having ground webbing portion 260 directly attached to and electrically coupled to contacts 120 of layer 210 . It shows layer 210 having ground plane portion 360 directly attached to (e.g., formed with) and electrically coupled to webbing portion 260 . In some cases, contacts 110 of layer 210 in zones 105 and 107 are tied together in layer 210 by power signal ties 350 (e.g., conductor material, such as metal or copper, ties directly attached to and extending between adjacent ones of contacts 110 ) as shown. Webbing portion 260 may be a layer of solid conductor material extending between all of (e.g., occupying space not occupied by) a width of dielectric material surrounding upper contacts 110 , 130 , 140 , and any ties of layer 210 . Plane portion 360 may be a layer of solid conductor material extending around and physically attached to (e.g., formed with or as part of) portion 260 .

In some cases, portion 260 may be the same as webbing 160 (e.g., the same device, formed the same way and having the same function and capabilities as webbing 160 ). In some cases, the combination of portion 260 and portion 360 may be the same as webbing 160 . In some cases, the descriptions for webbing 160 describe portion 260 ; and portion 360 is a ground plane that has inner edges formed with, extending from, directly attached to, and electrically coupled to (e.g., with zero resistance) the outer edges of portion 260 . In FIG. 3B , portion 260 may exist in all of zones 102 , 104 , 105 and 107 . In some cases, portion 260 may cover an area equal to at least width (WE 2 +2WE 1 +WE 3 )×length LE 1 .

FIG. 3B shows all of the openings in webbing portion 260 of zone 102 having contacts 130 . However, it can be appreciated that fewer than all, such as half (or one third or two thirds) of all of the openings in webbing portion 260 of zone 102 may have contacts 130 . Also, it can be appreciated that in some embodiments, webbing portion 260 may only extends across half of zone 102 (e.g., across only half of width WE 1 of zone 102 ) and in this case only half of all of the openings shown in webbing portion 260 of zone 102 have contacts 130 (not shown, but accomplished by removing half of width WE 1 of webbing portion 260 and contacts 130 with ground plane portion 360 in zone 102 ).

FIG. 3B also shows all of the openings in webbing portion 260 of zone 104 having contacts 140 . However, it can be appreciated that fewer than all, such as half (or one third or two thirds) of all of the openings in webbing portion 260 of zone 104 may have contacts 140 . Also, it can be appreciated that in some embodiments, webbing portion 260 may only extends across half of zone 104 (e.g., across only half of width WE 1 of zone 104 ) and in this case only half of all of the openings shown in webbing portion 260 of zone 104 have contacts 140 (not shown, but accomplished by removing half of width WE 1 of webbing portion 260 and contacts 140 with ground plane portion 360 in zone 104 ).

FIG. 3C is a schematic cross-sectional top view of a ground webbing structure package showing top layer or upper layer ground webbing structure portion 262 of a second interconnect level of the package. FIG. 3C may be a top perspective view of layer 220 of device 300 . In some cases, layer 210 of FIG. 3B is formed upon or onto layer 212 (e.g., see FIGS. 2A-B ) which is formed upon or onto layer 220 of FIG. 3C . FIG. 3C shows layer 220 having power contacts 110 , ground contacts 120 , received signal contacts 130 , transmit signal contacts 140 , ground webbing portion 262 , ground plane portion 362 , and signal traces 148 which may be directly attached to and electrically coupled to contacts 140 of layer 220 . Webbing portion 262 may be a layer of solid conductor material extending between all of (e.g., occupying space not occupied by) a width of dielectric material surrounding upper contacts 110 , 130 and any traces and ties of layer 220 . Plane portion 362 may be a layer of solid conductor material extending around and physically attached to (e.g., formed with or as part of) portion 262 .

FIG. 3C also shows layer 220 having zone 102 with contacts 130 in rows 174 - 180 . It shows zone 104 having contacts 140 in rows 184 - 190 . It shows zone 105 having contacts 110 in row 170 and contacts 120 in row 172 . It shows zone 107 having contacts 110 and 120 in row 182 . It shows layer 220 having ground webbing portion 262 directly attached to and electrically coupled to contacts 120 of layer 220 . It shows layer 220 having ground plane portion 362 directly attached to (e.g., formed with) and electrically coupled to webbing portion 262 . In some cases, contacts 110 of layer 220 in zone 105 (and optionally zone 107 , now shown but removing portion 262 from between those two contacts 110 such as shown in FIG. 3B ) are tied together in layer 220 by power signal ties (e.g., conductor material, such as metal, ties directly attached to and extending between adjacent ones of contacts 110 ) as shown.

In some cases, portion 262 may be the same as webbing 162 (e.g., the same device, formed the same way and having the same function and capabilities as webbing 162 ). In some cases, the combination of portion 262 and portion 362 may be the same as webbing 162 . In some cases, the descriptions for webbing 162 describe portion 262 ; and portion 362 is a ground plane that has inner edges formed with, extending from, directly attached to, and electrically coupled to (e.g., with zero resistance) the outer edges of portion 262 . In FIG. 3C , portion 262 may exist in all of zones 102 , 105 and 107 (but not in zone 104 ). In some cases, portion 262 may cover an area equal to at least width (WE 2 +WE 1 +WE 3 )×length LE 1 .

FIG. 3C shows all of the openings in webbing portion 262 of zone 102 having contacts 130 . However, it can be appreciated that fewer than all, such as half (or one third or two thirds) of all of the openings in webbing portion 262 of zone 102 may have contacts 130 . Also, it can be appreciated that in some embodiments, webbing portion 262 may only extends across half of zone 102 (e.g., across only half of width WE 1 of zone 102 ) and in this case only half of all of the openings shown in webbing portion 262 of zone 102 have contacts 130 (not shown, but accomplished by removing half of width WE 1 of webbing portion 262 and contacts 130 with ground plane portion 362 in zone 102 ).

FIG. 3C shows all of zone 104 having contacts 140 . However, it can be appreciated that fewer than all, such as half (or one third or two thirds) of all of zone 104 may have contacts 140 . Also, it can be appreciated that in some embodiments, zone 104 only extends across half of shown zone 104 (e.g., across only half of width WE 1 of zone 104 ) and in this case only half of all of shown zone 104 has contacts 140 (not shown, but accomplished by replacing half of width WE 1 of contacts 140 with ground plane portion 362 in zone 104 ).

FIG. 3D is a schematic cross-sectional top view of a ground webbing structure package showing top layer or upper layer ground webbing structure portion 264 of a third interconnect level of the package. FIG. 3D may be a top perspective view of layer 230 of device 300 . In some cases, layer 220 of FIG. 3C is formed upon or onto layer 222 (e.g., see FIGS. 2A-B ) which is formed upon or onto layer 230 of FIG. 3D . FIG. 3D shows layer 230 having power contacts 110 , ground contacts 120 , transmit signal contacts 140 , ground webbing portion 264 , and ground plane portion 364 . Webbing portion 264 may be a layer of solid conductor material extending between all of (e.g., occupying space not occupied by) a width of dielectric material surrounding upper contacts 110 , 130 , and any ties of layer 230 . Plane portion 364 may be a layer of solid conductor material extending around and physically attached to (e.g., formed with or as part of) portion 264 .

FIG. 3D also shows layer 230 having zone 102 with contacts 130 in rows 174 - 180 . It shows zone 104 having ground plane portion 364 in rows 184 - 190 . It shows zone 105 having contacts 110 in row 170 and contacts 120 in row 172 . It shows zone 107 having contacts 110 and 120 in row 182 . It shows layer 230 having ground webbing portion 264 directly attached to and electrically coupled to contacts 120 of layer 230 . It shows layer 230 having ground plane portion 364 directly attached to (e.g., formed with) and electrically coupled to webbing portion 264 . In some cases, contacts 110 of layer 230 in zone 105 (and optionally zone 107 , now shown but removing portion 264 from between those two contacts 110 such as shown in FIG. 3B ) are tied together in layer 230 by power signal ties (e.g., conductor material, such as metal, ties directly attached to and extending between adjacent ones of contacts 110 ) as shown.

In some cases, portion 264 may be the same as webbing 164 (e.g., the same device, formed the same way and having the same function and capabilities as webbing 164 ). In some cases, the combination of portion 264 and portion 364 may be the same as webbing 164 . In some cases, the descriptions for webbing 164 describe portion 264 ; and portion 364 is a ground plane that has inner edges formed with, extending from, directly attached to, and electrically coupled to (e.g., with zero resistance) the outer edges of portion 264 . In FIG. 3D , portion 264 may exist only in of zones 102 , 105 and 107 (e.g., but not in zone 104 where ground plane portion 364 exists). In some cases, portion 264 may cover an area equal to at least width (WE 2 +WE 1 +WE 3 )×length LE 1 .

FIG. 3D shows all of the openings in webbing portion 264 of zone 102 having contacts 130 . However, it can be appreciated that fewer than all, such as half (or one third or two thirds) of all of the openings in webbing portion 264 of zone 102 may have contacts 130 . Also, it can be appreciated that in some embodiments, webbing portion 264 may only extends across half of zone 102 (e.g., across only half of width WE 1 of zone 102 ) and in this case only half of all of the openings shown in webbing portion 264 of zone 102 have contacts 130 (not shown, but accomplished by removing half of width WE 1 of webbing portion 264 and contacts 130 with ground plane portion 364 in zone 102 ).

FIG. 3E is a schematic cross-sectional top view of a ground webbing structure package showing top layer or upper layer ground plane portion 366 of a fourth interconnect level of the package. FIG. 3E may be a top perspective view of layer 240 of device 300 . In some cases, layer 230 of FIG. 3D is formed upon or onto layer 232 (e.g., see FIGS. 2A-B ) which is formed upon or onto layer 240 of FIG. 3E . FIG. 3E shows layer 240 having power contacts 110 , ground contacts 120 , received signal contacts 130 , ground plane portion 366 , and signal traces 138 which may be directly attached to and electrically coupled to contacts 130 of layer 240 . Plane portion 366 may be a layer of solid conductor material extending around and physically surrounding a width of dielectric material surrounding upper contacts 110 , 130 , and any ties and traces of layer 240 .

FIG. 3E also shows layer 240 having zone 102 with contacts 130 in rows 174 - 180 . It shows zone 104 having signal traces 138 in rows 184 - 190 . It shows zone 105 having contacts 110 in row 170 and contacts 120 in row 172 . It shows zone 107 having contacts 110 and 120 in row 182 . It shows layer 240 having portion 366 directly attached to and electrically coupled to contacts 120 of layer 240 . In some cases, contacts 110 of layer 240 in zone 105 (but not zone 107 ) are tied together in layer 240 by power signal ties (e.g., conductor material, such as metal, ties directly attached to and extending between adjacent ones of contacts 110 ) as shown. In some cases, portion 366 is a ground plane that has inner edges formed with, extending from, directly attached to, and electrically coupled to (e.g., with zero resistance) the outer edges of contacts 120 of zone 102 . In FIG. 3E , portion 366 may exist in all of zone 105 .

FIG. 3E shows all of zone 102 having contacts 130 . However, it can be appreciated that fewer than all, such as half (or one third or two thirds) of all of zone 102 may have contacts 130 . Also, it can be appreciated that in some embodiments, zone 102 only extends across half of shown zone 102 (e.g., across only half of width WE 1 of zone 102 ) and in this case only half of all of shown zone 102 has contacts 130 (not shown, but accomplished by replacing half of width WE 1 of contacts 130 with ground plane portion 366 in zone 102 ).

FIG. 3F is a schematic cross-sectional top view of a ground webbing structure package showing top layer or upper layer ground plane portion 368 of a fifth interconnect level of the package. FIG. 3F may be a top perspective view of layer 250 of device 300 . In some cases, layer 240 of FIG. 3E is formed upon or onto layer 242 (e.g., see FIGS. 2A-B ) which is formed upon or onto layer 250 of FIG. 3F . FIG. 3F shows layer 250 having power contacts 110 , ground contacts 120 and ground plane portion 368 . Plane portion 368 may be a layer of solid conductor material extending around and physically surrounding a width of dielectric material surrounding upper contacts 110 and any ties and traces of layer 250 .

FIG. 3F also shows layer 250 having zone 102 with ground plane portion 368 in rows 174 - 180 . It shows zone 104 having ground plane portion 368 in rows 184 - 190 . It shows zone 105 having contacts 110 in row 170 and contacts 120 in row 172 . It shows zone 107 having contacts 110 and 120 in row 182 . It shows layer 250 having ground plane portion 368 directly attached to (e.g., formed with) and electrically coupled to contacts 120 . In some cases, contacts 110 of layer 250 are tied together in layer 250 in zone 105 (and optionally zone 107 , now shown but removing portion 368 from between those two contacts 110 such as shown in FIG. 3B ) by power signal ties (e.g., conductor material, such as metal, ties directly attached to and extending between adjacent ones of contacts 110 ) as shown.

In some cases, portion 368 is a ground plane that has inner edges formed with, extending from, directly attached to, and electrically coupled to (e.g., with zero resistance) the outer edges of contacts 120 . In some cases, portion 368 represents the ground traces 128 of level L 5 as shown in FIGS. 1-2B .

FIG. 3G is a schematic cross-sectional top view of a ground webbing structure package showing top layer or upper layer power plane layer of a sixth interconnect level of the package.

FIG. 3G may be a top perspective view of a layer having power plane 318 which may be directly attached to and electrically coupled to contacts 110 of that layer. In some cases, layer 250 of FIG. 3F is formed upon or onto layer 252 (e.g., see FIGS. 2A-B ) which is formed upon or onto the layer of FIG. 3G . FIG. 3F shows a layer having power contacts 110 of the tied together in that layer by power plane 318 (e.g., conductor material (such as a metal) plane or layer directly attached to and extending between adjacent ones of contacts 110 as shown. Plane 318 may be a layer of solid conductor material extending around and physically attached to (e.g., formed with) upper contacts 130 and any ties and traces of that layer.

FIG. 3G also shows a layer having zone 102 with power plane 318 in rows 170 - 190 . It shows power plane 318 directly attached to (e.g., formed with) and electrically coupled to contacts 110 . In some cases, plane 318 is a power plane that has inner edges formed with, extending from, directly attached to, and electrically coupled to (e.g., with zero resistance) the outer edges of contacts 110 . In some cases, power plane 318 represents power traces 118 of level L 6 as shown in FIGS. 1-2B .

Webbing structures 160 , 162 and 164 are each electronically coupled to (e.g., touching, formed with, or directly attached to) ground contacts 120 of rows 172 and 182 of levels L 1 , L 2 and L 3 , respectively. They also each surround the data signal contacts (e.g., any existing contacts 130 and 140 by distance W 4 ) of levels L 1 , L 2 and L 3 , respectively. It may also surround the power contacts 110 of levels L 1 , L 2 and L 3 , respectively. The power contacts may be disposed adjacent to the ground contacts 120 in a power and ground zone (e.g., 105 or 107 ) that is between the data transmit signal zone 104 and the data receive signal zone 102 of levels L 1 , L 2 and L 3 . In some cases, webbing structures 160 , 162 and 164 each extend from the ground contacts 120 of levels L 1 , L 2 and L 3 , respectively (1) through a first side 183 of the power and ground zone (e.g., zone 105 or 107 ) and into the data transmit signal zone 104 and surrounds the data transmit signal contacts 140 of levels L 1 , L 2 and L 3 , respectively; and (2) through an opposite side 181 (e.g., opposite from the first side) of the power and ground zone and into the data receive signal zone 102 and surrounds the data receive signal contacts 130 of levels L 1 , L 2 and L 3 , respectively. In some cases, ground webbing structures 160 , 162 and 164 each extend along the same planar surface as the upper contacts (e.g., contacts 110 , 120 , 130 and 140 ) of levels L 1 , L 2 and L 3 , respectively.

In some cases, contacts 110 , 112 and traces 118 are used to transmit or provide power signals to an IC chip or other device attached to contacts 110 of Level L 1 . In some cases they are used to provide an alternating current (AC) or a direct current (DC) power signal (e.g., Vdd). In some cases the signal has a voltage of between 0.5 and 2.0 volts. In some cases it is a different voltage level.

In some cases, contacts 120 , 122 and traces 128 are used to transmit or provide grounding (e.g., isolation) signals to an IC chip or other device attached to contacts 120 of Level L 1 . In some cases they are used to provide a zero voltage direct current (DC) grounding signal (e.g., GND). In some cases the signal has a voltage of between 0.0 and 0.2 volts. In some cases it is a different but grounding voltage level.

In some cases, contacts 130 , 132 and traces 138 are used to transmit or provide a receive data signal from an IC chip or other device attached to contacts 130 of Level L 1 . In some cases they are used to provide an alternating current (AC) or high frequency (HF) receive data signal (e.g., RX). In some cases the signal has a frequency of between 7 and 25 GT/s; and a voltage of between 0.5 and 2.0 volts. In some cases the signal has a frequency of between 6 and 15 GT. In some cases the signal has a voltage of between 0.4 and 5.0 volts. In some cases it is a different frequency and/or voltage level.

In some cases, contacts 140 , 142 and traces 148 are used to transmit or provide a transmit data signal to an IC chip or other device attached to contacts 140 of Level L 1 . In some cases they are used to provide an alternating current (AC) or high frequency (HF) transmit data signal (e.g., TRX). In some cases the signal has a frequency of between 7 and 25 GT/s; and a voltage of between 0.5 and 2.0 volts. In some cases the signal has a frequency of between 6 and 15 GT. In some cases the signal has a voltage of between 0.4 and 5.0 volts. In some cases it is a different frequency and/or voltage level.

Webbing structures 160 , 162 and 164 may each provide a ground isolation webbing structure across all of zones 102 , 104 , 105 and 107 of levels L 1 , L 2 and L 3 , respectively, that reduces “die bump field” crosstalk between all adjacent ones of contacts 110 , 120 , 130 and/or 140 surrounded by webbings 160 , 162 and 164 of levels L 1 , L 2 and L 3 , respectively. They may also each provide a ground isolation webbing structure between each of zones 102 , 104 , 105 and 107 of levels L 1 , L 2 and L 3 , respectively, that reduces “cluster to cluster” crosstalk between all adjacent ones of zones 102 , 104 , 105 and 107 surrounded by webbings 160 , 162 and 164 of levels L 1 , L 2 and L 3 , respectively.

They may also each provide a ground isolation webbing structure within each of zones 102 , 104 , 105 and 107 of levels L 1 , L 2 and L 3 , respectively, that reduces “in-cluster” crosstalk between all adjacent ones of contacts 110 , 120 , 130 or 140 in each of one 102 , 104 , 105 or 107 surrounded by webbings 160 , 162 and 164 of levels L 1 , L 2 and L 3 , respectively.

For example, by being layers of conductive material electrically connected to the ground contacts 120 , ground isolation webbings 160 , 162 and 164 may provide electrically grounded layers having openings through which contacts 110 , 130 , and 140 exist or are disposed. In some cases, webbings 160 , 162 and 164 absorb, or shield electromagnetic crosstalk signals produced by one contact, from reaching an adjacent contact of levels L 1 , L 2 and L 3 , respectively, due to the amount of grounded conductive material, and location of the conductive grounded material adjacent to (e.g., surrounding at a distance of W 4 ) the power contacts 110 , receive contacts 130 , and transmit contacts 140 of levels L 1 , L 2 and L 3 , respectively.

In some cases, any of ground isolation webbings 160 , 162 or 164 reduce electrical crosstalk caused by undesired capacitive, inductive, or conductive coupling of a first signal received or transmitted through one of contacts 110 , 130 , and 140 effecting or being mirrored in a second signal received or transmitted through another, different one of contacts 110 , 130 , and 140 on the same level of levels L 1 -L 5 . In some cases, they reduce such electrical crosstalk of a first signal received or transmitted through one of contacts 130 , and 140 effecting or being mirrored in a second signal received or transmitted through another, different one of contacts 130 , and 140 on the same level of levels L 1 -L 5 . In some cases, they reduce such electrical crosstalk of such a first signal effecting or being mirrored in such a second signal on a different level of levels L 1 -L 5 , such as effecting or being mirrored in a second signal of an adjacent level (e.g., level L 1 and L 3 are adjacent to level L 2 ). In some cases, each (or all) of ground isolation webbings 160 , 162 and 164 reduce such electrical crosstalk from such a first signal effecting or being mirrored in such a second signal. In some cases, any or each of ground isolation webbings 160 , 162 and 164 also reduce such electrical crosstalk from such a first signal received or transmitted through one of contacts 112 , 132 , and 142 effecting or being mirrored in such a second signal received or transmitted through another, different one of contacts 112 , 132 , and 142 on the same or different level of levels L 1 -L 5 as noted above for contacts 110 , 130 , and 140 .

Such electrical crosstalk may include interference caused by two signals becoming partially superimposed on each other due to electromagnetic (inductive) or electrostatic (capacitive) coupling between the contacts (e.g., conductive material) carrying the signals. Such electrical crosstalk may include where the magnetic field from changing current flow of a first data signal in one contact of contacts 130 , 132 , 140 or 142 (or trace 138 or 148 ) in levels L 1 -L 5 as noted above induces current in a second data signal in one contact of contacts 130 , 132 , 140 or 142 (or trace 138 or 148 ) in levels L 1 -L 5 . The first and second signals may be flowing in contacts or traces running parallel to each other, as in a transformer.

In some embodiments, any or each of ground isolation webbings 160 , 162 or 164 reduce electrical crosstalk as noted above (1) without increasing the distance or spacing between the contacts (or traces) noted above, (2) without increasing the distance or spacing between the any of Levels L 1 -L 5 , (3) without re-ordering any of the contacts (or traces) noted above or Levels L 1 -L 5 . In some cases, this is due to using any or each of ground isolation webbings 160 , 162 or 164 as shielding between any of the contacts (or traces) noted above or Levels L 1 -L 5 .

In some embodiments, level L 4 will not have any ground webbing. In some embodiments, level L 5 will include a solid ground plane or layer (e.g., such as replacing trace 128 ). In some embodiments, level L 6 , below level L 5 will be a solid planar ground layer (e.g., electrically coupled to grounding interconnects of rows 172 and/or 182 ). In some embodiments, level L 2 or L 3 will only have ground webbing 162 and 164 in zone 102 or 104 . In some embodiments, level L 2 or L 3 will have no ground webbing 162 and 164 (e.g., only webbing 160 exists). In some embodiments, only level L 1 and L 3 will have ground webbing 160 and 164 . In some embodiments, they will only have it in zones 102 and 103 .

In some cases, a solder resist layer is formed over level L 1 . Such a resist may be a height (e.g., thickness) of solid non-conductive solder resist material. Such material may be or include an epoxy, an ink, a resin material, a dry resist material, a fiber base material, a glass fiber base material, a cyanate resin and/or a prepolymer thereof; an epoxy resin, a phenoxy resin, an imidazole compound, an arylalkylene type epoxy resin or the like as known for such a solder resist. In some cases it is an epoxy or a resin.

The resist may be a blanket layer that is masked and etched to form openings where solder can be formed on and attached to the upper contacts (e.g., contacts 110 , 120 , 130 and 140 ), or where contacts of anther device (e.g., a chip) can be soldered to the upper contacts. Alternatively, the resist may be a layer that is formed on a mask, and the mask then removed to form the openings. In some cases, the resist may be a material (e.g., epoxy) liquid that is silkscreened through or sprayed onto a pattern (e.g., mask) formed on the package; and the mask then removed (e.g., dissolved or burned) to form the openings. In some cases, the resist may be a liquid photoimageable solder mask (LPSM) ink or a dry film photoimageable solder mask (DFSM) blanket layer sprayed onto the package; and then masked and exposed to a pattern and developed to form the openings. In some cases, the resist goes through a thermal cure of some type after the openings (e.g., pattern) are defined. In some cases the resist is laser scribed to form the openings. In some cases, the resist may be formed by a process known to form such a resist of a package.

In some embodiments, features of level L 1 -L 5 (e.g., contacts, via contacts and ground webbing) may have a pitch (e.g., such as defined as PW, PL, PD; and/or as an average of the height of contacts or layers) that is determined by a standard package design rule (DR) or chip package as known. In some cases, that pitch is a line spacing (e.g., the actual value of the line widths and spaces between lines on the layers) or design rules (DR) of a feature (e.g., conductive contact, or trace) that is between 9 and 12 micrometers. In some cases, that pitch allows for “flip chip” bonding (e.g., using solder in solder resist openings over level L 1 ) also known as controlled collapse chip connection (C4) bump scaling such as for interconnecting semiconductor devices, such as IC chips and microelectromechanical systems (MEMS), to external circuitry with solder bumps that have been deposited onto the chip pads. In some cases, that pitch is a bump pitch of (e.g., using solder in the openings) between 130 micrometers and 200 micrometers.

Upper contacts 110 and via contacts 112 (e.g., of layers 210 - 252 ) may be height H 1 (e.g., a thickness) and H 2 (e.g., a thickness) respectively; and trace 118 may be height H 4 (e.g., a thickness) of solid conductive material. Also, the other upper contacts (e.g., contacts 120 , 130 and 140 ) may be height H 1 ; the other via contacts (e.g., contacts 122 , 132 and 142 ) may be height H 4 ; and the other traces (e.g., traces 128 , 138 and 148 ) may be height H 4 of solid conductive material.

In some cases, webbings 160 , 162 and 164 (e.g., of layers 210 , 220 and 230 ) are also height H 5 (e.g., a thickness) of solid conductive material. The conductive material may be a pure conductor (e.g., a metal or pure conductive material). Such material may be or include copper (Cu), gold, silver, bronze, nickel, silver, aluminum, molybdenum, an alloy, or the like as known for such a contact. In some cases, they are all copper.

In some cases, the contacts, traces and webbing may be formed as a blanket layer of conductor material (e.g., a pure conductive material) that is masked and etched to form openings where dielectric material will be deposited, grown or formed (and leave portions of the conductor material where the contacts, traces and webbing are now formed). Alternatively, the conductor material may be a layer that is formed in openings existing through a patterned mask, and the mask then removed (e.g., dissolved or burned) to form the contacts, traces and webbing. Such forming of the contacts, traces and webbing may include or be depositing the conductor material such as by chemical vapor deposition (CVD) or by atomic layer deposition (ALD); or growing the conductor material such as an electrolytic layer of metal or conductor grown from a seed layer of electroless metal or conductor to form the contacts, traces and webbing.

In some cases, the contacts and traces may be formed by a process known to form such contacts and traces of a package or chip package device. In some cases, the webbings may be formed by a process known to form contacts and traces of a package or chip package device.

Layers of dielectric 103 (e.g., layers 103 a - 103 f ; and/or of layers 210 - 252 ) may each be a height H 1 for an upper layer and height H 2 for a lower layer of each level L 1 -L 5 (e.g., H 1 plus H 2 per each level) of solid non-conductive material. The dielectric material may be a pure non-conductor (e.g., an oxide or pure non-conductive material). Such material may be or include silicon nitride, silicon dioxide, porcelain, glass, plastic, or the like as known for such a dielectric. In some cases it is silicon nitride.

In some cases, the dielectric may be a blanket layer of dielectric material (e.g., a non-conductive insulator material) that is masked and etched to form openings where the contacts, traces and webbing are deposited, grown or formed. Alternatively, the dielectric may be a layer that is formed on a patterned mask, and the mask then removed (e.g., dissolved or burned) to form openings where the contacts, traces and webbing are deposited, grown or formed. Such forming of the dielectric layer, or portions may include or be depositing the dielectric material such as by chemical vapor deposition (CVD) or by atomic layer deposition (ALD); or growing the dielectric material such as from or on a lower surface of a dielectric material (e.g., that may be the same type of material or a different type of dielectric material) to form the layer or portions. In some cases, the dielectric layer, portions of dielectric structure, or openings in dielectric layer may be formed by a process known to form such dielectric of a package or chip package device.

In some cases, the mask used may be a material formed on a surface (e.g., of a layer); and then having a pattern of the mask removed (e.g., dissolved, developed or burned) to form the openings where the conductor material (or dielectric) are to be formed. In some cases, the mask may be patterned using photolithography. In some cases, the mask may be liquid photoimageable “wet” mask or a dry film photoimageable “dry” mask blanket layer sprayed onto the surface; and then masked and exposed to a pattern of light (e.g., the mask is exposed to light where a template of the pattern placed over the mask does not block the light) and developed to form the openings. Depending on the mask type, the exposed or unexposed areas are removed. In some cases, the mask goes through a thermal cure of some type after the openings (e.g., pattern) are defined. In some cases, the mask may be formed by a process known to form such a mask of a chip package, or device formed using a chip package POR.

FIG. 4 is a flow chart illustrating a process for forming a conductive material ground webbing structure package, according to embodiments described herein. FIG. 4 shows process 400 which may be a process for forming embodiments described herein of package 100 of any of FIGS. 1-3 and 5 . In some cases, process 400 is a process for forming a ground webbing structure package that includes a first interconnect level with an upper (e.g., top or first) interconnect layer with upper level ground contacts, upper level data signal contacts, and a upper level ground webbing structure that is directly connected (e.g., attached to, formed as part of, or electrically coupled to) to the upper level ground contacts and surrounds the upper data signal contacts.

Process 400 begins at optional block 410 at which a lower layer of a first interconnect level of a chip package is formed, having first level ground via contacts over and attached to upper ground contacts of a second interconnect level, and first level data signal via contacts over and attached to upper data signal contacts of the second interconnect levels of the chip package.

Block 410 may include forming lower layer 212 of a first interconnect level L 1 of a chip package 100 having (1) conductive material first level ground via contacts 122 attached to conductive material upper ground contacts 120 of an upper layer 220 of a second interconnect level L 2 ; and (2) conductive material first level data signal via contacts 132 and 142 attached to conductive material upper data signal contacts 130 and 140 of an upper layer 220 of a second interconnect level L 2 .

Block 410 may include forming via contacts 112 , 122 , 132 , 142 and/or traces of a lower layer 121 , 222 , 232 , 242 or 252 of any interconnect level of levels L 1 -L 5 , respectively, as described herein. It may also include forming dielectric 103 b of a lower layer 121 , 222 , 232 , 242 or 252 of any interconnect level of levels L 1 -L 5 , respectively, as described herein.

In some cases, block 410 may include forming contacts and traces as described herein, such as to form via contacts 112 , 122 , 132 , and/or 142 . In some cases, block 410 may include forming dielectric as described herein, such as to form dielectric portions 103 b.

In some cases, block 410 may include (e.g., prior to block 420 ) forming lower layer 212 of first interconnect level L 1 having first level ground via contacts 122 and first level data signal via contacts 132 and 142 of level L 1 ; where the first level ground via contacts 122 attach first level upper ground contacts 120 of level L 1 to second level upper ground contacts 120 of level L 2 ; the first level upper data signal via contacts 132 and 142 attach the first level upper data signal contacts 130 and 140 to second level upper data signal contacts 130 and 140 of second interconnection level L 2 disposed below level L 1 ; and level L 2 has second level ground webbing structure 162 directly connected to the second level upper ground contacts 120 and surrounding the second level upper data signal contacts 130 and 140 of level L 2 .

After block 410 , block 420 is performed. Block 420 may include or be forming an upper layer of the first interconnect level of the chip package having (1) conductive material first level upper ground contacts formed over and attached to the conductive material first level ground via contacts of the lower layer of the first interconnect level, (2) conductive material first level upper data signal contacts formed over and attached to the conductive material first level data signal via contacts of the lower layer of the first interconnect level, and (3) a conductive material first level ground webbing structure (a) over dielectric of the lower layer of the first interconnect level, (b) directly connected to the first level upper ground contacts and (c) surrounding the first level upper data signal contacts of the first interconnect level.

In some cases, the ground webbing may be formed directly onto, as part of, or touching the outer edges of the upper ground contacts of the first interconnect level L 1 . In some cases the ground webbing is physically attached to and electrically coupled by conductor material to the upper ground contacts.

Block 420 may include forming upper layer 210 of the first interconnect level L 1 of the chip package 100 , layer 210 having (1) conductive material first level upper ground contacts 120 formed over and attached to the conductive material first level ground via contacts 122 of the lower layer 220 of the first interconnect level L 1 , (2) conductive material first level upper data signal contacts 130 and 140 formed over and attached to the conductive material first level data signal via contacts 132 and 142 of the lower layer 220 of the first interconnect level L 1 , and (3) a conductive material first level ground webbing structure 160 : (a) over dielectric 103 b of the lower layer 220 of the first interconnect level L 1 , (b) directly connected to the first level upper ground contacts 120 and (c) surrounding the first level upper data signal contacts 130 and 140 of the first interconnect level L 1 .

Block 420 may include forming upper contacts 110 , 120 , 130 , 140 and/or traces of an upper layer 120 , 220 , 230 , 240 or 250 of any interconnect level of levels L 1 -L 5 , respectively, as described herein. It may also include forming dielectric 103 a of an upper layer 120 , 220 , 230 , 240 or 250 of any interconnect level of levels L 1 -L 5 , respectively, as described herein.

In some cases, block 420 may include forming contacts and traces as described herein, such as to form upper contacts 110 , 120 , 130 , and/or 140 . In some cases, block 420 may include forming dielectric as described herein, such as to form dielectric portions 103 a.

In some cases, block 420 may include forming a conductive material ground webbing structure package 100 by forming upper layer 210 of a first interconnect level L 1 having conductive material first level upper ground contacts 120 , conductive material first level upper data signal contacts 130 and 140 , and conductive material first level ground webbing structure webbing 160 , where the first level ground webbing structure 160 is directly connected to the first level ground contacts 120 and surrounds the first level data signal contacts 130 and 140 .

A first example embodiments of block 420 may include (e.g., prior to forming the upper layer 210 of the first interconnect level), forming a mask (e.g., DFR, not shown) over a top surface of a lower layer 212 of the first interconnect level L 1 , the mask having (1) first openings over ground via contacts 122 of the lower layer 212 and in which to form the first level upper ground contacts 120 of Level L 1 , (2) second openings over data signal via contacts 132 and 142 of the lower layer 212 and in which to form the first level upper data signal contacts 130 and 140 of Level L 1 , and (3) third openings over dielectric 103 b of the lower layer 212 and in which to form the first level ground webbing structure 160 . In this case, the first openings may be horizontally open to and in communication with the third openings. Some of these cases may include electroless plating of a seed layer of the conductor material, prior to forming the masks layer.

In this case, block 420 may then include simultaneously forming conductive material (e.g., plating on the exposed seed layer of the openings) to form the first level upper ground contacts 120 in the first openings, the first level upper data signal contacts 130 and 140 in the second openings, and the first level ground webbing structure 160 in the third openings of Level L 1 .

In some of these cases, simultaneously forming the conductive material may include forming that conductive material of the contacts 120 , 130 and 140 ; and webbing 160 during the same process, deposition or growth of that conductive material in the first, second and third openings. In some cases, simultaneously forming the conductive material includes electrolytic plating of conductor material in the first, second and third openings (e.g., on the electroless plating of seed layer).

In some cases of these, after simultaneously forming the conductive material, the mask is removed from between the first level upper ground contacts 120 , the first level upper data signal contacts 130 and 140 , and the first level ground webbing structure 160 . This removal may also include removing the seed layer from between the openings. Then dielectric material 103 a (e.g., SiO 2 or SiN 3 ) is deposited where the mask was removed from between the first level upper ground contacts, the first level upper data signal contacts, and the first level ground webbing structure. In some cases, forming the mask includes forming a blanket layer of mask material and etching the blanket layer to form the first, second and third openings.

A second example of embodiments of block 420 may include (e.g., prior to forming the upper layer 210 of the first interconnect level), forming a blanket layer of dielectric material (e.g., blanket of dielectric 103 a prior to etching) over a top surface of a lower layer 212 of the first interconnect level L 1 . Then forming a mask over a top surface of the blanket layer of dielectric material, the mask having (1) first openings over ground via contacts 122 of the lower layer 212 and in which to form the first level upper ground contacts 120 of Level L 1 , (2) second openings over data signal via contacts 132 and 142 of the lower layer 212 and in which to form the first level upper data signal contacts 130 and 140 of Level L 1 , and (3) third openings over dielectric 103 b of the lower layer 212 and in which to form the first level ground webbing structure 160 . In this case, the first openings may be horizontally open to and in communication with the third openings. Block 420 may then include etching away portions of the blanket layer of dielectric material in the first, second and third openings (e.g., and to the top surface of the lower layer 212 ). Block 420 may then include simultaneously forming (e.g., plating) conductive material to form the first level upper ground contacts 120 in the first openings, the first level upper data signal contacts 130 and 140 in the second openings, and the first level ground webbing structure 160 in the third openings of Level L 1 .

In some of these cases, simultaneously forming the conductive material may include forming that conductive material of the contacts 120 , 130 and 140 ; and webbing 160 during the same process, deposition or growth of that conductive material in the first, second and third openings. In some cases, simultaneously forming the conductive material includes electroless plating of a seed layer, and then electrolytic plating of conductor material in the first, second and third openings.

In some of these cases, after simultaneously forming the conductive material in the second example embodiments of block 420 , the mask is removed from above the dielectric layer 103 a between the first level upper ground contacts 120 , the first level upper data signal contacts 130 and 140 , and the first level ground webbing structure 160 . This leaves dielectric material 103 a (e.g., SiO 2 or SiN 3 ) between the first level upper ground contacts 120 , the first level upper data signal contacts 130 and 140 , and the first level ground webbing structure 160 .

In some cases, deposition or growing of conductor material in blocks 410 and 420 may be by chemical vapor deposition (CVD) or by atomic layer deposition (ALD). In some cases, deposition or growing of dielectric material in block 410 and 420 may be by chemical vapor deposition (CVD) or by atomic layer deposition (ALD). It can be appreciated that the descriptions herein for blocks 410 and 420 may also include polishing (e.g., chemical mechanical polishing) or planarizing surfaces as needed to perform the descriptions herein of blocks 410 and 420 .

It can be appreciated that the descriptions herein for blocks 410 and 420 may be repeated to form additional levels similar to level L 1 . Such descriptions may include forming additional levels similar to level L 1 , below level L 1 (e.g., to form level L 2 , etc.); or above level L 1 (e.g., to form a new top level L 1 such that level L 2 is now level L 2 ).

In some cases, only block 420 of process 400 is performed (e.g., to form layer 210 ). In other cases, only blocks 410 - 420 of process 400 are performed (e.g., to form layers 210 - 212 ). In some cases, block 420 of process 400 may be performed, then block 410 , then block 420 repeated for another level (e.g., to form layers 210 - 232 ). In some cases, blocks 410 and 420 of process 400 are repeated once (e.g., to form layers 210 - 222 ), twice (e.g., to form layers 210 - 232 ), thrice (e.g., to form layers 210 - 242 ), or four times (e.g., to form layers 210 - 252 ).

In some cases, any or all of height H 1 -H 5 may be between 3 and 5 percent less than or greater than that described herein. In some cases, they may be between 5 and 10 percent less than or greater than that described herein.

In some cases, any or all of widths W 1 -W 6 may represent a circular diameter, or the maximum width (maximum distance from one edge to another farthest edge from above) of an oval, a rectangle, a square, a triangle, a rhombus, a trapezoid, or a polygon.

In some cases, embodiments of (e.g., packages, systems and processes for forming) a conductive material ground webbing structure package, such as described for FIGS. 1-4 , provide quicker and more accurate data signal transfer between the two IC's attached to a package by including a top interconnect layer with a ground webbing structure (e.g., “webbing”) of conductor material that reduces bump field crosstalk, signal type cluster-to-cluster crosstalk and in-cluster signal type crosstalk (e.g., see FIG. 5 ). The ground webbing structure (e.g., of the top interconnect level, and optionally of other levels) may be formed connected to upper grounding contacts to reduce bump field crosstalk, signal type cluster-to-cluster crosstalk and in-cluster signal type crosstalk by surrounding each of the upper transmit and receive data signal contacts.

In some cases, embodiments of processes for forming a conductive material ground webbing structure package, or embodiments of a conductive material ground webbing structure package provide a package having better components for providing stable and clean power (e.g., from contacts 110 ), ground (e.g., from contacts 120 ), and high frequency transmit (e.g., from contacts 130 ) and receive (e.g., from contacts 140 ) data signals between its top surface 106 (or layer 210 ) and (1) other components attached to the package, such as at other contacts on the top surface of the package where similar ground webbing structure(s) exist, or (2) other components of lower levels of the package that will be electrically connected to the contacts through via contacts or traces of the package. The components may be better due to the addition of the conductive material ground webbing structure which reduces crosstalk between the data transfer contacts.

In some cases, embodiments of processes for forming a conductive material ground webbing structure package, or embodiments of a conductive material ground webbing structure package provide the benefits embodied in computer system architecture features and interfaces made in high volumes. In some cases, embodiments of such processes and devices provide all the benefits of solving very high frequency data transfer interconnect problems, such as between two IC chips or die (e.g., where hundreds even thousands of signals between two die need to be routed), or for high frequency data transfer interconnection within a system on a chip (SoC) (e.g., see FIG. 5 ). In some cases, embodiments of such processes and devices provide the demanded lower cost high frequency data transfer interconnects solution that is needed across the above segments. These benefits may be due to the addition of the conductive material ground webbing structure which reduces crosstalk between the data transfer contacts.

In some cases, embodiments of processes for forming a conductive material ground webbing structure package or embodiments of a conductive material ground webbing structure package provide ultra-high frequency data transfer interconnect in a standard package, such as a flip-chip x grid array (FCxGA), where ‘x’ can be ball, pin, or land, or a flip-chip chip scale package (FCCSP, etc.) due to the addition of the conductive material ground webbing structure which reduce crosstalk between the data transfer contacts.

In addition to this, such processes and devices can provide for direct and local power, ground and data signal delivery to both chips. In some cases, embodiments of such processes and devices provide communication between two IC chips or board ICs including memory, modem, graphics, and other functionality, directly attached to each other (e.g., see FIG. 5 ). These processes and devices provide increased input/output (IO) frequency data transfer at lower cost. These provisions and increases may be due to the addition of the conductive material ground webbing structure which reduces crosstalk between the data transfer contacts.

FIG. 5 is a schematic top perspective view of a conductive material ground isolation webbing structure semiconductor device package upon which two integrated circuit (IC) chip or “die” are attached. FIG. 5 shows isolation webbing structure package 500 having first area 510 upon which IC chip 520 is mounted; second area 512 upon which second IC chip 522 is mounted; and electrical signal coupling 530 electrically coupling signals of area 510 to signals of area 512 . Area 510 may include descriptions herein for package 100 , such as by including zones 102 , 104 , 105 and 107 (and interconnect levels and stacks thereof). Area 512 may also include descriptions herein for package 100 , such as by including zones 102 , 104 , 105 and 107 (and interconnect levels and stacks thereof). In some cases, package 500 represents package 100 of any of FIGS. 1-4 , having two areas with the structures shown in those figures.

Coupling 530 may include contacts, interconnects, traces, circuitry, and other features known for transmitting signals between area 510 and 512 . For example, coupling 530 may include electronics data signal traces for communicating signals from receive contacts 130 of zone 510 to transmit contact 540 of zone 512 . Coupling 530 may also include electronics data signal traces for communicating signals from receive contacts 130 of zone 512 to transmit contact 540 of zone 510 . Coupling 530 may also include ground traces or planes for providing ground signals to contacts 120 of areas 510 and 512 . Coupling 530 may also include power traces or planes for providing power signals to contacts 110 of areas 510 and 512 . Area 510 may include ground webbing 160 , and optionally 162 , and optionally 164 , as described herein. Area 512 may include ground webbing 160 , and optionally 162 , and optionally 164 , as described herein.

FIG. 5 may describe a cases where one IC chip 520 is mounted in area 510 on top surface 106 (having level L 1 ) of microelectronic substrate package 500 , while package 500 is also physically and electronically connected to another IC chip 522 in area 512 on top surface 106 (having level L 1 ), so that package 500 can provide data signal transfer between the two IC chips. Package 500 (e.g., coupling 530 ) may route hundreds or even thousands of high frequency data signals between chips 520 and 522 (e.g., between data signal contacts of those chips). Package 500 may be similar to package 100 , and may have two areas 510 and 512 , each with ground webbing (e.g., such as webbing 160 ) upon which or under which chips 520 and 522 are mounted, respectively. Package 500 (e.g., each of areas 510 and 512 ) may be formed of materials, have levels L 1 -L 5 , have ground webbings, have similar electrical characteristics, and have similar functional capabilities, and may be formed using a process (e.g., see FIG. 4 ) as described for forming package 100 .

In some cases, embodiments of (e.g., packages, systems and processes for forming) a conductive material ground webbing structure package 500 , provides quicker and more accurate data signal transfer between the two IC chips 520 and 522 attached to the package by including a top interconnect layer 210 with a ground webbing structure 160 (e.g., see FIGS. 1-3 ) of conductor material in each of areas 510 and 512 that reduces bump field crosstalk, signal type cluster-to-cluster crosstalk and in-cluster signal type crosstalk in each of areas 510 and 512 . Ground webbing structures 160 (e.g., of the top interconnect level L 1 , and optionally webbings 162 and 164 of levels L 2 -L 3 ) may be formed connected to upper grounding contacts 120 in each of areas 510 and 512 , to reduce bump field crosstalk, signal type cluster-to-cluster crosstalk and in-cluster signal type crosstalk by surrounding each of the upper transmit and receive data signal contacts in each of areas 510 and 512 (e.g., see FIGS. 1-3 ). In some cases, webbing structures 160 at areas 510 and 512 reduce bump field crosstalk, signal type cluster-to-cluster crosstalk and in-cluster signal type crosstalk as described for package 100 .

In some cases, chip 520 and 522 may each be an IC chip type as described for attaching to package 100 , such as a microprocessor, coprocessor, graphics processor, memory chip, modem chip, a next-level component, or other microelectronic chip device. In some cases, they are different IC chip types. In some cases, they are the same IC chip type. In some cases, they are both a microprocessor, coprocessor, or graphics processor. In some cases, one is a memory chip and the other is a microprocessor, coprocessor, or graphics processor.

Electrical coupling 530 may include circuitry between area 510 first interconnect level L 1 and area 512 first interconnect level L 1 to communicate data signals between the chip 520 and chip 522 . In some cases, electrical coupling 530 , area 510 ground webbing structure (e.g., webbing 160 and optionally webbing 162 and optionally webbing 164 at area 510 ) and area 512 ground webbing structure (e.g., webbing 160 and optionally webbing 162 and optionally webbing 164 at area 510 ) are electrially connected to comminicate data signals between the chip 520 and chip 522 at a frequency of between 7 and 25 GT/s. In some cases, they are connected to communicate from very low frequency transfer such as from 50 mega hertz (MHz) to a GHz transfer level, such as greater than 40 GHz (or up to between 40 and 50 GHz).

Some embodiments of package 500 exclude chips 520 and 522 . Here, package 500 includes a first set of zones 102 , 104 , ( 105 and 107 ) of area 510 , are connected or electrically coupled (e.g., through coupling 530 ) to a second set of corresponding zones 102 , 104 , ( 105 and 107 ) of area 512 through traces 138 , 148 , ( 118 and 128 ) respectively (e.g., see FIGS. 2A-B ). The first set of zones 102 and 104 of area 510 may be connected or electrically coupled to a second set of corresponding zones 104 and 102 of area 512 respectively so that the transmit signal zone 102 of the first set as shown is connected to the receive signal zone 104 of the second set, and vice versa. In this case, the first set of zones of area 510 may be configured to be connectable to a chip (e.g., chip 520 at level L 1 ) and the second set of zones of area 512 may be configured to be connectable to a chip (e.g., chip 522 at level L 1 ) so that the first and second IC chips or devices can exchange data (e.g., using transmit data signals and receive data signals as noted above) using zones 102 and 104 of package 500 . This provides a benefit of reduced cross talk as noted herein during such data exchange due to or based on use ground webbings 160 , 162 and 164 . In this case, package 500 may operate to link the first and second IC chips.

In some certain embodiments, descriptions herein for “each” or “each of” of a feature, such as in “each of rows 170 - 190 ”, “each of the contacts”, “each zone”, “each of zones 102 and 104 ”, “each of zones 105 and 107 ”, “each of levels L 1 -L 5 ”; the like for rows 170 - 190 ; the like for the contacts (e.g., contacts 120 , 130 or 140 ); the like for zones 102 , 104 , 105 or 107 ; or the like for levels L 1 , L 2 , L 3 , L 4 and L 5 may be for most of those features or for less than all of those feature in that row, zone or level. In some cases they may refer to between 80 and 90 percent of those features existing in that row, zone or level.

FIG. 6 illustrates a computing device in accordance with one implementation. FIG. 6 illustrates computing device 600 in accordance with one implementation. Computing device 600 houses board 602 . Board 602 may include a number of components, including but not limited to processor 604 and at least one communication chip 606 . Processor 604 is physically and electrically coupled to board 602 . In some implementations at least one communication chip 606 is also physically and electrically coupled to board 602 . In further implementations, communication chip 606 is part of processor 604 .

Depending on its applications, computing device 600 may include other components that may or may not be physically and electrically coupled to board 602 . These other components include, but are not limited to, volatile memory (e.g., DRAM), non-volatile memory (e.g., ROM), flash memory, a graphics processor, a digital signal processor, a crypto processor, a chipset, an antenna, a display, a touchscreen display, a touchscreen controller, a battery, an audio codec, a video codec, a power amplifier, a global positioning system (GPS) device, a compass, an accelerometer, a gyroscope, a speaker, a camera, and a mass storage device (such as hard disk drive, compact disk (CD), digital versatile disk (DVD), and so forth).

Communication chip 606 enables wireless communications for the transfer of data to and from computing device 600 . The term “wireless” and its derivatives may be used to describe circuits, devices, systems, methods, techniques, communications channels, etc., that may communicate data through the use of modulated electromagnetic radiation through a non-solid medium. The term does not imply that the associated devices do not contain any wires, although in some embodiments they might not. Communication chip 606 may implement any of a number of wireless standards or protocols, including but not limited to Wi-Fi (IEEE 802.11 family), WiMAX (IEEE 802.16 family), IEEE 802.20, long term evolution (LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE, GSM, GPRS, CDMA, TDMA, DECT, Bluetooth, derivatives thereof, as well as any other wireless protocols that are designated as 3G, 4G, 5G, and beyond. Computing device 600 may include a plurality of communication chips 606 . For instance, first communication chip 606 may be dedicated to shorter range wireless communications such as Wi-Fi and Bluetooth and second communication chip 606 may be dedicated to longer range wireless communications such as GPS, EDGE, GPRS, CDMA, WiMAX, LTE, Ev-DO, and others.

Processor 604 of computing device 600 includes an integrated circuit die packaged within processor 604 . In some implementations, the integrated circuit die of the processor includes one or more devices, such as transistors or metal interconnects. In some embodiments, the package of the integrated circuit die or processor 604 includes embodiments of processes for forming a “ground webbing structure package” or embodiments of a “ground webbing structure package” as described herein. The term “processor” may refer to any device or portion of a device that processes electronic data from registers and/or memory to transform that electronic data into other electronic data that may be stored in registers and/or memory.

Communication chip 606 also includes an integrated circuit die packaged within communication chip 606 . In accordance with another implementation, the integrated circuit die of the communication chip includes one or more devices, such as transistors or metal interconnects. In some embodiments, the package of the integrated circuit die or chip 606 includes embodiments of processes for forming a “ground webbing structure package” or embodiments of a “ground webbing structure package” as described herein.

In further implementations, another component housed within computing device 600 may contain an integrated circuit die that includes one or more devices, such as transistors or metal interconnects. In some embodiments, the package of the other integrated circuit die or chip includes embodiments of processes for forming a “ground webbing structure package” or embodiments of a “ground webbing structure package” as described herein.

In various implementations, computing device 600 may be a laptop, a netbook, a notebook, an ultrabook, a smartphone, a tablet, a personal digital assistant (PDA), an ultra mobile PC, a mobile phone, a desktop computer, a server, a printer, a scanner, a monitor, a set-top box, an entertainment control unit, a digital camera, a portable music player, or a digital video recorder. In further implementations, computing device 600 may be any other electronic device that processes data.

The above description of illustrated implementations, including what is described in the Abstract, is not intended to be exhaustive or to limit the invention to the precise forms disclosed. While specific implementations of, and examples for, the invention are described herein for illustrative purposes, various equivalent modifications are possible within the scope, as those skilled in the relevant art will recognize. These modifications may be made to the invention in light of the above detailed description. For example, although the descriptions above show only webbing structures 160 , 162 and 164 , at levels L 1 , L 2 and L 3 , those descriptions can apply to fewer, more or different webbing structures. Embodiments of fewer such structures may be where only one or two of structures 160 , 162 and 164 exist. Embodiments of more of such structures may be where additional webbing structures (in addition to structures 160 , 162 and 164 ) similar to one of structures 160 , 162 and 164 exist at a different level such as level L 5 and/or level L 4 . Embodiments of different of such structures may be such as where structure 164 exists on Level L 4 instead of level L 3 ; or where structure 164 exists on Level L 5 instead of level L 3 .

Also, although the descriptions above show only zones 102 , 104 , 105 and 107 of package 100 (e.g., having webbing structures 160 , 162 and 164 , at levels L 1 , L 2 and L 3 ), those descriptions can apply to more or different number of zones 102 , 104 , 105 and 107 . Embodiments of different of such zones 102 , 104 , 105 and 107 may be such as where any one or two of zones 102 , 104 , or 105 does not exist.

Embodiments of more of such zones may be where a first set of zones 102 , 104 , ( 105 and 107 ) as shown, are connected or electrically coupled to a second set of corresponding zones 102 , 104 , ( 105 and 107 ), such as through traces 138 , 148 , ( 118 and 128 ) respectively (e.g., see FIG. 5 ). In this case, the first set of zones 102 and 104 may be connected or electrically coupled to a second set of corresponding zones 104 and 102 respectively so that the transmit signal zone 102 of the first set as shown is connected to the receive signal zone 104 of the second set, and vice versa. In this case, the first set of zones may be connected to a first IC chip or device (e.g., at level L 1 ) and the second set of zones may be connected to a second, different IC chip or device (e.g., at level L 1 ) so that the first and second IC chips or devices can exchange data (e.g., using transmit data signals and receive data signals as noted above) using zones 102 and 104 of package 100 . This provides a benefit of reduced cross talk as noted herein during such data exchange due to or based on use ground webbings 160 , 162 and 164 . In this case, package 100 may operate to link the first and second IC chips.

FIGS. 7-19 may apply to embodiments of a ground plane vertical isolation of, ground line coaxial isolation of, and impedance tuning of horizontal data signal transmission lines routed through package devices. Such embodiments of the invention are related in general, to semiconductor device packaging and, in particular, to substrate packages, interposers, and printed circuit board (PCB) substrates upon which integrated circuit (IC) chips or other package devices may be attached, and methods for their manufacture. Such a substrate package device may have high speed horizontal data signal transmission lines extending through the package device for transmitting data between IC chips or other devices attached to the package device.

Integrated circuit (IC) chips (e.g., “chips”, “dies”, “ICs” or “IC chips”), such as microprocessors, coprocessors, graphics processors and other microelectronic devices often use semiconductor package devices (“packages”) to physically and/or electronically attach the IC chip to a circuit board, such as a motherboard (or motherboard interface). The IC chip (e.g., “die”) is typically mounted within a microelectronic substrate package that, among other functions, enables electrical connections between the die and a socket, a motherboard, or another next-level component. Some examples of such package devices are substrate packages, interposers, and printed circuit board (PCB) substrates upon which integrated circuit (IC) chips or other package devices may be attached.

There is a need in the field for an inexpensive and high throughput process for manufacturing such package devices. In addition, the process could result in a high package device yield and a package device of high mechanical stability. Also needed in the field, is a package device having better components for providing stable and clean power, ground, and high frequency transmit and receive data signals between its top surface and other components of or attached to the package device, such as from between different horizontal locations of horizontal data signal transmission lines in a level of the package device.

As integrated circuit (IC) chip or die sizes shrink and interconnect densities increase, physical and electrical connections require better components for providing stable and clean power high frequency transmit and receive data signals between different horizontal locations of, or a length of, horizontal data signal transmission lines in a level of package devices upon which the IC chip is mounted or is communicating the data signals. Some examples of such package devices are substrate packages, interposers, and printed circuit board (PCB) substrates upon which integrated circuit (IC) chips or other package devices may be attached. Such data signals may be received from or transmitted to contacts on the top or bottom surfaces of the package device that will be electrically connected through via contacts to the horizontal data signal transmission lines of the package device.

In some cases, an IC chip may be mounted within the package device, such as for “flip chip” bonding or packaging. In some cases, the IC chip may be mounted on the package device, which is also physically and electronically connected to another IC chip, so that the package device can provide data signal transfer between two IC chips. Here, in many cases, the package device must route hundreds or even thousands of high frequency data signals between two die. Some such package devices may be or use a silicon interposer, a silicon bridge, or an organic interposer technology.

According to some embodiments, it is possible for such a package device to provide higher frequency and more accurate data signal transfer between different horizontal locations of (or a length of) horizontal data signal transmission lines in one or more vertical levels of package devices upon which the IC chip is mounted or is communicating the data signals by having (or being manufactured by a process that forms): (1) ground isolation planes between, (2) ground isolation lines “coaxially” surrounding, or (3) such ground planes between and such ground isolation lines surrounding horizontal data signal transmission lines (e.g., conductor material or metal signal traces) that are horizontally routed through the package device. The (1) ground isolation planes between, and/or (2) ground isolation lines surrounding the horizontal data signal transmission lines may electrically shield the data signals transmitted in signal lines, thus reducing signal crosstalk between and increasing electrical isolation of the data signal transmission lines. In addition, the electrically shielded horizontal data signal transmission lines may be tuned using eye diagrams to select signal line widths and ground isolation line widths that provide optimal data transmission performance.

In some cases, the horizontal ground isolation planes are between different vertical levels of different types (e.g., “TX” or “RX”) of data transmit (e.g., “TX”) signal and data receive (e.g., “RX”) signal transmission lines. In this case, the ground isolation planes may reduce crosstalk (and optionally may increase electrical isolation) between different adjacent vertical levels of the different types of TX and RX transmission lines, such as by reducing cross talk caused by a RX signal line on a vertically adjacent TX signal line (e.g., above or below the RX signal line); or vice versa. In some cases, there may be two or three adjacent vertical levels of the same type of TX and RX transmission lines between two horizontal isolation planes that are at different vertical heights in the package.

In some cases, the ground isolation lines surround (e.g., to the left, right, above and below; such as to form a “coaxial” type shielding) horizontal data RX or TX signal transmission lines in different vertical levels of data transmit signal (e.g., “TX”) and data signal receive (e.g., “RX”) transmission lines. Such “coaxial” type shielding or “surrounding” may be where a ground isolation lines are located horizontally adjacent (e.g., to the left and right) and vertically adjacent (e.g., above and below) the (or each) data signal transmission line. In some cases, the isolation lines surrounding the transmission lines may increase horizontal and vertical electrical isolation (and optionally may reduce crosstalk) of each of the surrounded (e.g., horizontally and vertically adjacent ones of) TX and RX transmission lines. This may include increasing isolation of a RX (or TX) signal line with respect to a horizontally or vertically adjacent RX (or TX) signal line. In some cases, the isolation lines surrounding the transmission lines may reduce vertical crosstalk (and optionally may increase isolation) of each of the surrounded (e.g., vertically adjacent ones of) TX and RX transmission lines, such as by reducing crosstalk between a RX signal line and a vertically adjacent TX signal line of a different level. In some cases, the isolation lines surrounding the transmission lines are used at dense interconnect regions, such as to form a “coaxial” routing design around each of the transmission lines to reduce crosstalk (and optionally may increase electrical isolation) between different vertically and horizontally adjacent data signal transmission lines. In these cases, there may be two or three vertically adjacent levels of one type of the TX and RX transmission lines, each transmission line being surrounded.

In some cases, such a package device is described as a package device having conductor material ground isolation planes between, and/or ground isolation lines (“coaxially”) surrounding, horizontal data signal transmission lines horizontally routed through the package device (or through an interposer). Some embodiments of such a package device may be described as (e.g., devices, systems and processes for forming) a conductor material ground isolation “coaxial” surrounded and/or ground isolated plane isolated horizontal data signal transmission lines; a “ground isolated transmission line package device”; or a ground isolated horizontal data signal transmission line microprocessor package device.

Such a ground isolated transmission line package device having (1) ground isolation planes between and/or (2) ground isolation lines surrounding the horizontal data signal transmission lines may electrically shield the data signals transmitted in horizontally and/or vertically adjacent signal lines, thus reducing signal crosstalk between and increasing electrical isolation of the adjacent horizontal data signal transmission lines. In addition, such a package may have the electrically shielded horizontal data signal transmission lines tuned using test signals and eye diagrams to select signal line widths and ground isolation line widths that provide optimal data transmission performance of the signal lines (e.g., channel). In some cases, use of such a package increases the stability and cleanliness of high frequency transmit and receive data signals transmitted between different horizontal locations of horizontal data signal transmission lines in a level of the package device. In some cases, it may increase the usable frequency of transmit and receive data signals transmitted between the different horizontal locations of horizontal data signal transmission lines in a level of the package device, as compared to a package device not having ground isolated transmission line (e.g., as compared to a package device where the transmission lines do not have ground isolation planes between, or ground isolation lines (“coaxially”) surrounding, horizontal data signal transmission lines). In some cases, such an increased speed (e.g., frequency) may include data signals between 7 and 25 gigatransfers per second (GT/s). In some cases, GT/s may refer to a number of operations (e.g., transmission of digital data such as the data signal herein) transferring data that occur in each second in some given data transfer channel such as a channel provided by signal lines 738 or 748 ; or may refer to a sample rate, i.e. the number of data samples captured per second, each sample normally occurring at the clock edge. 1 GT/s is 10 9 or one billion transfers per second.

In some cases, the ground isolated transmission line package device reduces (e.g., improves or mitigates) crosstalk (e.g., as compared to the same package but without any ground isolated transmission lines, such as without (1) ground isolation planes between and/or (2) ground isolation lines surrounding the horizontal data signal transmission lines may reduce crosstalk between and increase isolation of horizontally and vertically adjacent ones of the horizontal data signal transmission lines on levels of the device (e.g., see levels Lj-Ll of FIGS. 7-10 , or levels Lm-Lq of FIGS. 11-14 , or levels Lm-Ly of FIGS. 15-19 ) from very low frequency transfer such as from 50 megatransfers per second (MT/s) to a greater than 40 GT/s (or up to between 40 and 50 GT/s). In some cases, the ground isolated transmission line package device improves copper density in the package device (e.g., as compared to the same package but without any ground isolated transmission lines). In some cases, the ground isolated transmission line package device enhances the power delivery network for the input/output block (e.g., IO block such as including planes 760 , 762 and 764 ; and lines 1160 , 1162 , 1164 and 1166 ) by improving (e.g., reducing resistance of) the ground impedance (e.g., as compared to the same package but without any ground isolated transmission lines), which helps to reduce the IO power network impedance (e.g., lower the resistance of power contacts).

In some cases, a ground isolated horizontal data signal transmission line package device has ground isolation planes separating horizontal data signal receive and transmit layers or levels (e.g., interconnect levels). Each level may have an upper layer of non-conductive (e.g., dielectric) material; a middle layer having conductor material (e.g., pure conductor or metal) data signal lines (e.g., traces) between non-conductive (e.g., dielectric) material portions; a lower layer of non-conductive (e.g., dielectric) material; and a lowest level ground isolation plane of conductor material (e.g., pure conductor or metal). The ground isolation planes between the horizontal data signal receive and transmit layers or levels (e.g., interconnect levels) may reduce crosstalk between (e.g., between TX signal lines and RX signal lines) and increase isolation of the horizontal data signal transmission lines of different horizontally adjacent levels or layers of the device package. This embodiment of a ground isolated horizontal data signal transmission line package device may be described as a ground isolation “plane” separated data signal package device (e.g., see device 750 ).

FIG. 7 is schematic cross-sectional side and length views of a computing system, including ground isolated horizontal data signal transmission line package devices. FIG. 7 shows a schematic cross-sectional side view of computing system 700 (e.g., a system routing signals from a computer processor or chip such as chip 702 to another device such as chip 708 or 709 ), including ground isolated horizontal data signal transmission line package devices, such as patch 704 , interposer 706 and package 710 . In some cases, system 700 has CPU chip 702 mounted on patch 704 , which is mounted on interposer 706 at first location 707 . It also shows chip 708 mounted on package 710 at first location 701 ; and chip 709 mounted on chip 710 at second location 711 . Package 710 is mounted on interposer 706 at second location 713 . For example, a bottom surface of chip 702 is mounted on top surface 705 of patch 704 using solder bumps or bump grid array (BGA) 712 . A bottom surface of patch 704 is mounted on top surface 705 of interposer 706 at first location 707 using solder bumps or BGA 714 . Also, a bottom surface of chip 708 is mounted on top surface 703 of package 710 at first location 701 using solder bumps or BGA 718 . A bottom surface of chip 709 is mounted on surface 703 of package 710 at location 711 using solder bumps or BGA 719 . A bottom surface of package 710 is mounted on surface 705 of interposer 706 at second location 713 using solder bumps or BGA 716 .

In some cases, device 704 , 706 or 710 may represent a substrate package, an interposer, a printed circuit board (PCB), a PCB an interposer, a “package”, a package device, a socket, an interposer, a motherboard, or another substrate upon which integrated circuit (IC) chips or other package devices may be attached (e.g., such as microprocessor, coprocessor, graphics processor, memory chip, modem chip, or other microelectronic chip devices).

FIG. 7 also shows vertical data signal transmission lines 720 (e.g., data signal RX 738 and TX 748 transmission lines or traces) originating in chip 702 and extending vertically downward through bumps 712 and into vertical levels of patch 704 . In some case, lines 720 may originate at (e.g., include signal contacts on) the bottom surface of chip 702 , extend downward through bumps 712 (e.g., include some of bumps 712 ), extend downward through (e.g., include signal contacts on) a top surface of patch 704 , and extend downward to levels Lj-Ll of patch 704 at first horizontal location 721 of patch 704 (e.g., include vertical signal lines within vertical levels Ltop-L 1 of patch 704 , such as where level Ltop is the topmost or uppermost level of patch 704 and has an exposed top surface; and level L 1 is below level Ltop).

FIG. 7 also shows patch horizontal data signal transmission lines 722 (e.g., data signal RX 738 and TX 748 transmission lines or traces) originating at first horizontal location 721 in levels Lj-Ll of patch 704 and extend horizontally through level Lj-Ll along length L 71 of levels Lj-Ll to second horizontal location 723 in levels Lj-Ll of patch 704 . Length L 71 may be between 5 and 15 millimeters (mm). In some cases it is between 8 and 13 mm. It can be appreciated that length L 71 may be an appropriate line or trace length within a package device, that is less than or greater than those mentioned above.

Next, FIG. 7 shows vertical data signal transmission lines 724 (e.g., data signal RX 738 and TX 748 transmission lines or traces) originating in patch 704 and extending vertically downward through bumps 714 and into vertical levels of interposer 706 . In some case, lines 724 may originate at (e.g., from horizontal data signal transmission lines in) levels Lj-Ll at second horizontal location 723 of patch 704 , extend downward through bumps 714 (e.g., include signal contacts on the bottom surface of patch 704 and some of bumps 714 at location 707 ), extend downward through (e.g., include signal contacts on) top surface 705 of interposer 706 , and extend downward to levels Lj-Ll of interposer 706 at first horizontal location 725 of interposer 706 (e.g., include vertical signal lines within vertical levels Ltop-L 1 of interposer 706 , such as where level Ltop is the topmost or uppermost level of interposer 706 and has an exposed top surface; and level L 1 is below level Ltop).

FIG. 7 also shows interposer horizontal data signal transmission lines 726 (e.g., data signal RX 738 and TX 748 transmission lines or traces) originating at first horizontal location 725 in levels Lj-Ll of interposer 706 and extend horizontally through levels Lj-Ll along length L 72 of levels Lj-Ll to second horizontal location 727 in levels Lj-Ll of interposer 706 . Length L 72 may be between 10 and 40 mm. In some cases it is between 15 and 30 mm. In some cases it is between 15 and 22 mm. It can be appreciated that length L 72 may be an appropriate line or trace length within a package device, that is less than or greater than those mentioned above.

Next, FIG. 7 shows vertical data signal transmission lines 128 (e.g., data signal RX 738 and TX 748 transmission lines or traces) originating in interposer 706 and extending vertically upward through bumps 716 and into vertical levels of package 710 . In some case, lines 724 may originate at (e.g., from horizontal data signal transmission lines in) levels Lj-Ll at second horizontal location 727 of interposer 706 , extend upward through bumps 716 (e.g., include signal contacts on top surface 705 of interposer 706 and some of bumps 716 at location 713 ), extend upward through (e.g., include signal contacts on) a bottom surface of package 710 , and extend upward to levels Lj-Ll of package 710 at first horizontal location 729 of package 710 (e.g., include vertical signal lines within vertical levels Llast-L 1 of package 710 , such as where level Llast is the lowest or bottommost level of package 710 and has an exposed bottom surface; and level L 1 is above level Llast).

FIG. 7 also shows package device horizontal data signal transmission lines 730 (e.g., data signal RX 738 and TX 748 transmission lines or traces) originating at first horizontal location 729 in levels Lj-Ll of package 710 and extend horizontally through levels Lj-Ll along length L 73 of levels Lj-Ll to second horizontal location 731 in levels Lj-Ll of package 710 . Length L 73 may be between 5 and 15 mm. In some cases it is between 10 and 15 mm. It can be appreciated that length L 73 may be an appropriate line or trace length within a package device, that is less than or greater than those mentioned above.

Next, FIG. 7 shows vertical data signal transmission lines 732 (e.g., data signal RX 738 and TX 748 transmission lines or traces) originating in package 710 and extending vertically upward through bumps 718 and into chip 708 . In some case, lines 732 may originate at (e.g., from horizontal data signal transmission lines in) levels Lj-Ll at second horizontal location 731 of package 710 , extend upward through bumps 718 (e.g., include signal contacts on top surface 703 of package 710 and some of bumps 718 at location 701 ), extend upward through (e.g., include signal contacts on) a bottom surface of chip 708 , and extend upward to and terminate at (e.g., include signal contacts on) a bottom surface of chip 708 .

In some cases the data signal transmission signals transmitted and received (or existing) on the data signal transmission lines of lines 720 , 722 , 724 , 128 , 730 and 732 originate at (e.g., are generated or are provided by) chip 702 and chip 708 . In some cases, these data signal transmission signals may be generated by active circuits, transistors, transmitter circuitry or other components of or attached to chip 702 and 708 .

FIG. 7 also show vertical data signal transmission lines 733 (e.g., data signal RX 738 and TX 748 transmission lines or traces) originating in chip 708 and extending vertically downward through bumps 718 and into vertical levels of package 710 . In some cases, lines 733 may originate at (e.g., include signal contacts on) the bottom surface of chip 708 , extend downward through bumps 718 (e.g., include some of bumps 718 ), extend downward through (e.g., include signal contacts on) a top surface of package 710 , and extend downward to levels Lj-Ll of package 710 at first horizontal location 734 of package 710 (e.g., include vertical signal lines within vertical levels Ltop-L 1 of package 710 , such as where level Ltop is the topmost or uppermost level of package 710 and has an exposed top surface; and level L 1 is below level Ltop).

FIG. 7 also shows package device horizontal data signal transmission lines 735 (e.g., data signal RX 738 and TX 748 transmission lines or traces) originating at third horizontal location 734 in levels Lj-Ll of package 710 and extend horizontally through levels Lj-Ll along length L 74 of levels Lj-Ll to second horizontal location 736 in levels Lj-Ll of package 710 . Length L 74 may be between 0.5 and 25 mm. In some cases it is between 1.0 and 15 mm. In some cases it is between 2 and 10 mm. It can be appreciated that length L 71 may be an appropriate line or trace length within a package device, that is less than or greater than those mentioned above.

Next, FIG. 7 shows vertical data signal transmission lines 737 (e.g., data signal RX 738 and TX 748 transmission lines or traces) originating in package 710 and extending vertically upward through bumps 719 and into chip 709 . In some case, lines 737 may originate at (e.g., from horizontal data signal transmission lines in) levels Lj-Ll at fourth horizontal location 736 of package 710 , extend upward through bumps 719 (e.g., include signal contacts on top surface 703 of package 710 and some of bumps 719 at location 711 ), extend upward through (e.g., include signal contacts on) a bottom surface of chip 709 , and extend upward to and terminate at (e.g., include signal contacts on) a bottom surface of chip 709 .

In some cases the data signal transmission signals transmitted and received (or existing) on the data signal transmission lines of lines 733 , 735 and 737 originate at (e.g., are generated or are provided by) chip 708 and chip 709 . In some cases, these data signal transmission signals may be generated by active circuits, transistors, transmitter circuitry or other components of or attached to chip 708 and 709 .

In some cases the data signal transmission signals of lines 720 , 722 , 724 , 726 , 128 , 730 , 732 , 733 , 735 and/or 737 are or include data signal transmission signals to an IC chip (e.g., chip 702 , 708 or 709 ), patch 704 , interposer 706 , package 710 , or another device attached to thereto. In some cases the data signal transmission signals of lines 720 , 722 , 724 , 726 , 128 , 730 , 732 , 733 , 735 and/or 737 are or include data signal transmission signals from or generated by a chip 702 , 708 and/or 709 ; or another device attached to thereto.

In some cases the data signal transmission signals described herein are high frequency (HF) data signals (e.g., RX and TX data signals). In some cases, the signals have a speed of between 4 and 10 gigatransfers per second (GT/s). In some cases, the signals have a speed of between 6 and 8 gigatransfers per second. In some cases, the signals have a speed of between 4 and 5 Gigabits per second. In some cases, the signals have a speed of up to 10 Gigabits per second. In some cases, the signals have a speed of between 4 and 12 Giga-Transfers per second.

In some cases the signals have a speed between 7 and 25 GT/s; and a voltage of between 0.5 and 2.0 volts. In some cases the signal has a speed between 6 and 15 GT/s. In some cases the signal has a voltage of between 0.4 and 5.0 volts. In some cases it is between 0.5 and 2.0 volts. In some cases it is a different speed and/or voltage level that is appropriate for receiving or transmitting data signals through or within a package device. In some cases, they are in a range between a very low speed transfer rate such as from 50 MT/s to greater than 40 GT/s (or up to between 40 and 50 GT/s).

In some cases, lines 720 , 722 and 724 also include power and ground signal lines or traces (e.g., in addition to high frequency data signals receive and transmit lines 738 and 748 ). These power and ground lines are not shown. In some cases, they extend horizontally from location 721 to location 723 within levels Lj-Ll of patch 704 . In some cases they extend horizontally from location 721 to location 723 within other levels of patch 704 .

In some cases, lines 724 , 726 and 128 also include power and ground signal lines or traces (e.g., in addition to high frequency data signals receive and transmit lines 738 and 748 ). These power and ground lines are not shown. In some cases, they extend horizontally from location 725 to location 727 within levels Lj-Ll of interposer 706 . In some cases they extend horizontally from location 725 to location 727 within other levels of interposer 706 . In some cases the power and ground signals transmitted and received (or existing) on the power and ground signal lines of lines 720 , 722 , 724 and 726 originate at or are provided by patch 704 or interposer 706 . In some cases, these power and ground signals may be generated by power and ground circuits, transistors or other components of or attached to patch 704 or interposer 706 .

In some cases, lines 128 , 730 and 732 also include power and ground signal lines or traces (e.g., in addition to high frequency data signals receive and transmit lines 738 and 748 ). These power and ground lines are not shown. In some cases, they extend horizontally from location 729 to location 731 within levels Lj-Ll of package 710 . In some cases they extend horizontally from location 729 to location 731 within other levels of package 710 . In some cases the power and ground signals transmitted and received (or existing) on the power and ground signal lines of lines 128 , 730 and 732 originate at or are provided by package 710 or interposer 706 . In some cases, these power and ground signals may be generated by power and ground circuits, transistors or other components of or attached to package 710 or interposer 706 .

In some cases, lines 733 , 735 and 737 also include power and ground signal lines or traces (e.g., in addition to high frequency data signals receive and transmit lines 738 and 748 ). These power and ground lines are not shown. In some cases, they extend horizontally from location 734 to location 736 within levels Lj-Ll of package 710 . In some cases they extend horizontally from location 734 to location 736 within other levels of package 710 . In some cases the power and ground signals transmitted and received (or existing) on the power and ground signal lines of lines 733 , 735 and 737 originate at or are provided by package 710 or interposer 706 . In some cases, these power and ground signals may be generated by power and ground circuits, transistors or other components of or attached to package 710 or interposer 706

In some cases the power signal of lines 720 , 722 , 724 , 726 , 128 , 730 , 732 , 733 , 735 and/or 737 is or includes power signals to an IC chip (e.g., chip 702 or 708 ), patch 704 , interposer 706 , package 710 , or another device attached to thereto. In some cases this power signal is an alternating current (AC) or a direct current (DC) power signal (e.g., Vdd). In some cases the power signal has a voltage of between 0.4 and 7.0 volts. In some cases it is between 0.5 and 5.0 volts. In some cases it is a different voltage level that is appropriate for providing one or more electrical power signals through or within a package device or IC chip.

In some cases the ground signal of lines 720 , 722 , 724 , 726 , 128 , 730 , 732 , 733 , 735 and/or 737 is or includes ground signals to an IC chip (e.g., chip 702 or 708 ), patch 704 , interposer 706 , package 710 , or another device attached to thereto. In some cases this ground signal is a zero voltage direct current (DC) grounding signal (e.g., GND). In some cases the ground signal has a voltage of between 0.0 and 0.2 volts. In some cases it is a different but grounding voltage level for providing electrical ground signals through (or within) a package device or IC chip.

FIG. 7 also shows a schematic cross-sectional length view of a ground isolated horizontal data signal transmission line package device. In this case, the package device is ground isolation plane separated data signal package device 750 . Device 750 may be a “package device” representing any of patch 704 , interposer 706 or package 710 . It can be appreciated that device 750 may represent another package device having horizontal data transmission lines.

In some cases, package device 750 represents horizontal data signal transmission lines 722 of patch 704 (e.g., between location 721 and location 723 ) in a cross section perspective through perspective A-A′, such a cross section perpendicular to length (e.g., looking at a cross sectional view of the plane of height and width, and down direction L 71 ). In some cases, package device 750 represents horizontal data signal transmission lines 726 of interposer 706 (e.g., between location 725 and location 727 ) in a cross section perspective through perspective B-B′, such a cross section perpendicular to length (e.g., looking down direction L 72 ). In some cases, package device 750 represents horizontal data signal transmission lines 730 of package 710 (e.g., between location 729 and location 731 ) in a cross section perspective through perspective C-C′, such a cross section perpendicular to length (e.g., looking down direction L 73 ). In some cases, package device 750 represents horizontal data signal transmission lines 735 of package 710 (e.g., between location 734 and location 736 ) in a cross section perspective through perspective D-D′, such a cross section perpendicular to length (e.g., looking down direction L 74 ).

In some cases, package device 750 represents all of horizontal data signal transmission lines 722 , 726 , 730 and 735 . In some cases it represents any three of lines 722 , 726 , 730 and 735 . In some cases it represents any two of lines 722 , 726 , 730 and 735 . In some cases it represents only one of lines 722 , 726 , 730 and 735 .

In some cases, package device 750 has package device ground isolation plane 760 separating package device horizontal data signal receive transmission lines 738 (e.g., data signal RX 738 ) of level Lj from adjacent (e.g., here “adjacent” describing vertically adjacent, such as by being in a level above or below level Lj) horizontal data signal transmit transmission lines (e.g., data signal TX or RX lines) of a level or layer of the package device that is above level Lj. Plane 760 may exist in any of patch 704 (e.g., extending as a continuous conductor material plane separating signal lines of level Lj from a layer above level Lj between locations 721 and 723 ); interposer 706 (e.g., extending as a continuous conductor material plane separating signal lines of level Lj from a layer above level Lj between locations 725 and 727 ); and/or package 710 (e.g., extending as a continuous conductor material plane separating signal lines of level Lj from a layer above level Lj between locations 729 and 731 , and/or locations 734 and 736 ).

In some cases, package device 750 has package device ground isolation plane 762 separating package device horizontal data signal receive transmission lines 738 (e.g., data signal RX 738 ) of level Lj from adjacent horizontal data signal transmit transmission lines 748 (e.g., data signal TX 748 ) of level Lk of the package device that is below level Lj. Plane 762 may exist in any of patch 704 (e.g., extending as a continuous conductor material plane separating signal lines of level Lj from level Lk between locations 721 and 723 ); interposer 706 (e.g., extending as a continuous conductor material plane separating signal lines of level Lj from level Lk between locations 725 and 727 ); and/or package 710 (e.g., extending as a continuous conductor material plane separating signal lines of level Lj from level Lk between locations 729 and 731 , and/or locations 734 and 736 ).

In some cases, package device 750 also has package device ground isolation plane 764 separating package device horizontal data signal transmit transmission lines 748 (e.g., data signal TX 748 ) of level Lk from adjacent horizontal data signal transmit receive lines 738 (e.g., data signal RX 738 ) of level L 1 of the package device that is below level Lk. Plane 764 may exist in any of patch 704 (e.g., extending as a continuous conductor material plane separating signal lines of level Lk from level L 1 between locations 721 and 723 ); interposer 706 (e.g., extending as a continuous conductor material plane separating signal lines of level Lk from level L 1 between locations 725 and 727 ); and/or package 710 (e.g., extending as a continuous conductor material plane separating signal lines of level Lk from level L 1 between locations 729 and 731 , and/or locations 734 and 736 ).

In some cases, package device 750 has package device ground isolation plane 766 separating package device horizontal data signal receive transmission lines 738 (e.g., data signal RX 738 ) of level L 1 from adjacent horizontal data signal transmit transmission lines (e.g., data signal TX or RX lines) of a level or layer of the package device that is below level L 1 . Plane 766 may exist in any of patch 704 (e.g., extending as a continuous conductor material plane separating signal lines of level L 1 from a layer below level L 1 between locations 721 and 723 ); interposer 706 (e.g., extending as a continuous conductor material plane separating signal lines of level L 1 from a layer below level L 1 between locations 725 and 727 ); and/or package 710 (e.g., extending as a continuous conductor material plane separating signal lines of level L 1 from a layer below level L 1 between locations 729 and 731 , and/or locations 734 and 736 ).

FIG. 8A is an exploded schematic cross-sectional length view of a ground isolated horizontal data signal transmission line package device of FIG. 7 showing ground isolation planes separating horizontal data signal receive and transmit layers or levels. FIG. 8A shows an exploded schematic cross-sectional length view of ground isolation plane separated data signal package device 750 , such as a “package device” representing any of patch 704 (e.g., a view through perspective A-A′), interposer 706 (e.g., a view through perspective B-B′) or package 710 (e.g., a view through perspective C-C′ or D-D″). Package device 750 is shown having interconnect level Lj formed over or onto (e.g., touching) Level Lk which is formed over or onto Level L 1 . Each level may have an upper layer of non-conductive (e.g., dielectric) material; a middle layer having conductor material (e.g., pure conductor or metal) data signal lines (e.g., traces) between non-conductive (e.g., dielectric) material portions; a lower layer of non-conductive (e.g., dielectric) material; and a lowest level ground isolation plane of conductor material (e.g., pure conductor or metal).

More specifically, FIG. 8A shows package device 750 having layer 805 that includes (e.g., along with other materials that are beyond the edge of width W 73 ) or is (e.g., within width W 73 ) package device conductor material (e.g., pure conductor or metal) ground isolation plane 760 separating upper layer 810 of package device dielectric material (and package device horizontal data signal receive transmission lines 738 (e.g., data signal RX 738 )) of level Lj from package device non-conductor material (and vertically adjacent horizontal data signal transmit transmission lines (e.g., data signal TX or RX lines)) of a level or layer of the package device that is above plane 760 .

Plane 760 may be directly physically connected to (e.g., formed in contact with), electrically coupled to, or directly attached to (e.g., touching) ground contacts or via contacts in the same layer 805 or level as plane 760 . In some cases the ground plane 760 is or includes ground signals from patch 704 , interposer 706 , package 710 , or another device attached to thereto. In some cases, a ground signal transmitted (or existing on) ground plane 760 originates at or is provided by patch 704 , interposer 706 or package 710 . In some cases, the ground signal may be generated by ground circuits, transistors or other components of or attached (e.g., such as from a motherboard or power supply electrically connected) to patch 704 , interposer 706 or package 710 . In some cases this ground signal is a zero voltage direct current (DC) grounding signal (e.g., GND). In some cases the ground signal has a voltage of between 0.0 and 0.2 volts. In some cases it is a different but grounding voltage level for providing electrical ground signals through (or within) a package device or IC chip.

Layer 805 (e.g., plane 760 ) may be formed onto (e.g., touching) or over layer 810 of level Lj. Layer 805 has height H 71 and width W 73 . In some cases, height H 71 may be approximately 15 micrometers (15×E-6 meter—“um”) and width W 73 is between 1 millimeter (mm) and 10 mm. In some cases, height H 71 is between 10 and 20 micrometers (um). In some cases, it is between 5 and 30 micrometers. It can be appreciated that height H 71 may be an appropriate height of a conductive material grounding plane within a package device for reducing cross talk and for isolating signal traces, that is less than or greater than those mentioned above.

In some cases, width W 73 is between 1 millimeter (mm) and 20 mm. In some cases, it is between 100 micrometers and 2 mm. It can be appreciated that width W 73 may be an appropriate width of a (e.g., single, set or layer of) horizontal data signal receive or transmit lines within a package device, that is less than or greater than those mentioned above. In some cases, width W 73 can span from 1 percent to 100 percent of an entire width of a device package. In some cases, it can span from 20 percent to 90 percent of an entire width of a device package.

In some cases, the exact size of width W 73 may depend on number of signal lines employed within each level (e.g., number of lines 738 or 748 in levels Lj-Ll). In some cases, the size of width W 73 may also depend on the number of signal lines employed within the package device. In some cases, the size of width W 73 can be scaled with or depend on the manufacturing or processing pitch (e.g., of the signal lines, such as shown as pitch PW1). The size of width W 73 may also depend on the technology capability of forming the signal lines and package. In some cases, in general, the size of width W 73 can span from around a hundred to a couple of hundred micrometers (x E-6 meter—“um” or “microns”). In some cases, it is between 80 and 250 um. In some cases it is between 50 and 300 um.

Level Lj is shown having upper layer 810 formed over or onto (e.g., touching) middle layer 812 which is formed over or onto lower layer 814 which is formed over or onto lowest layer 816 .

Next, FIG. 8A shows upper layer 810 of level Lj that includes (e.g., along with other materials that are beyond the edge of width W 73 ) or is (e.g., within width W 73 ) package device non-conductive material plane 703 a separating layer 805 from middle layer 812 of level Lj. Layer 810 (e.g., plane 703 a ) may be formed onto (e.g., touching) or over middle layer 812 of level Lj. Layer 810 has height H 72 and width W 73 .

In some cases, height H 72 is approximately 25 micrometers. In some cases, height H 72 is between 20 and 30 micrometers (um). In some cases, it is between 10 and 40 micrometers. In some cases, height H 72 is the same as height H 71 noted above. It can be appreciated that height H 72 may be an appropriate height of a dielectric material layer between the signal lines and grounding plane within a package device, that is less than or greater than those mentioned above.

Now, FIG. 8A shows middle layer 812 of level Lj that includes (e.g., along with other materials that are beyond the edge of width W 73 ) or is (e.g., within width W 73 ) package device conductor material (e.g., pure conductor or metal) horizontal data signal receive transmission lines 738 (e.g., a first type of data signal lines or traces, such as RX data signal lines) disposed (e.g., located) between package device non-conductive (e.g., dielectric) material portions 703 b . Layer 812 separates upper layer 810 from lower layer 814 of level Lj. Layer 812 (e.g., lines 738 and portions 703 b ) may be formed onto (e.g., touching) or over lower layer 814 of level Lj. Layer 812 has height H 73 and width W 73 .

Horizontal data signal receive transmission lines 738 are shown having height H 73 and width W 71 (a width between horizontally adjacent portions 703 b ). Non-conductive material portions 703 b are shown having height H 73 and width W 72 (a width between horizontally adjacent lines 738 ).

In some cases, height H 73 may be approximately 15 micrometers (15×E-6 meter —“um”). In some cases, height H 73 is between 10 and 20 micrometers (um). In some cases, it is between 5 and 30 micrometers. It can be appreciated that height H 73 may be an appropriate height of a signal line layer (or data signal receive or transmit line) within a package device, that is less than or greater than those mentioned above. In some cases, height H 73 is the same as height H 71 .

In some cases, width W 71 is between 3 and 100 micrometers (um). In some cases, it is between 5 and 75 micrometers. In some cases, it is between 15 and 35 micrometers. It can be appreciated that width W 71 may be an appropriate width of a data signal receive or transmit line within a package device, that is less than or greater than those mentioned above.

In some cases, width W 72 is approximately 158 micrometers. In some cases, it is between 10 and 300 micrometers (um). In some cases, it is between 25 and 200 micrometers. In some cases, it is between 30 and 100 micrometers. It can be appreciated that width W 72 may be an appropriate width of a non-conductive material between horizontally adjacent data signal receive or transmit lines within a package device, that is less than or greater than those mentioned above. In some cases, the size of width of the manufacturing or processing pitch between same edges (or centers of width W 71 ) of horizontally adjacent data signal lines of device 750 is pitch PW 1 . PW 1 may be equal to the sum of widths W 71 +W 72 . In some cases, pitch PW 1 is approximately 206 micrometers.

In some cases, the aggregate (e.g., addition) of each pair of values for width W 71 /width W 72 (e.g., spacing between signal lines) (e.g., value A of width W 71 plus value B of width W 72 ; or value O of width W 71 plus value P of width W 72 , etc.) represents the same sum or constant (e.g., such as pitch width PW 1 ). In some cases, the sum is between 100 and 200 um. In some cases, it is between 720 and 150 um. In some cases it is between 730 and 140 um. In some cases, pair values may be values between (1) width W 71 between 60 and 80 um, and width W 72 between 55 and 75 um; and (2) width W 71 between 25 and 45 um, and width W 72 between 90 and 110 um. In some cases, pair values may be width W 71 /width W 72 of 70/65 um, 65/70 um, 60/75 um, 55/80 um, 50/85 um, 45/90 um, 40/95 um, or 35/100 um.

Next, FIG. 8A shows lower layer 814 of level Lj that includes (e.g., along with other materials that are beyond the edge of width W 73 ) or is (e.g., within width W 73 ) package device non-conductive material plane 703 c separating middle layer 812 from lowest layer 816 of level Lj. Layer 814 (e.g., plane 703 c ) may be formed onto (e.g., touching) or over lowest layer 816 of level Lj. Layer 814 has height H 72 and width W 73 .

Then, FIG. 8A shows lowest layer 816 of level Lj that includes (e.g., along with other materials that are beyond the edge of width W 73 ) or is (e.g., within width W 73 ) package device conductor material (e.g., pure conductor or metal) ground isolation plane 762 separating lower layer 814 of level Lj from upper layer 820 of vertically adjacent level Lk which is below level Lj. Layer 816 (e.g., plane 762 ) may vertically separate package device horizontal data signal receive transmission lines 738 (e.g., a first type of data signal lines or traces, such as RX data signal lines disposed between package device non-conductive material portions 703 b ) of level Lj (e.g., layer 812 ) from package device horizontal data signal transmit transmission lines 748 (e.g., a second type of data signal lines or traces, such as TX data signal lines disposed between package device non-conductive material portions 703 e ) of vertically adjacent level Lk (e.g., layer 822 ) that is below level Lj.

Plane 762 may be directly physically connected to (e.g., formed in contact with), electrically coupled to, or directly attached to (e.g., touching) ground contacts or via contacts in the same layer 816 or level as plane 762 . In some cases the ground plane 762 is or includes ground signals from patch 704 , interposer 706 , package 710 , or another device attached to thereto. In some cases, a ground signal transmitted (or existing on) ground plane 762 originates at or is provided by patch 704 , interposer 706 or package 710 . In some cases, the ground signal may be generated by ground circuits, transistors or other components of or attached (e.g., such as from a motherboard or power supply electrically connected) to patch 704 , interposer 706 or package 710 . In some cases this ground signal is a zero voltage direct current (DC) grounding signal (e.g., GND). In some cases the ground signal has a voltage of between 0.0 and 0.2 volts. In some cases it is a different but grounding voltage level for providing electrical ground signals through (or within) a package device or IC chip.

Layer 816 (e.g., plane 762 ) may be formed onto (e.g., touching) or over layer 820 of level Lk. Layer 816 has height H 71 and width W 73 (e.g., as noted above for plane 760 ).

Level Lk is shown having upper layer 820 formed over or onto (e.g., touching) middle layer 822 which is formed over or onto lower layer 824 which is formed over or onto lowest layer 826 .

Next, FIG. 8A shows upper layer 820 of level Lk that includes (e.g., along with other materials that are beyond the edge of width W 73 ) or is (e.g., within width W 73 ) package device non-conductive material plane 703 d separating layer 816 from middle layer 822 of level Lk. Layer 820 (e.g., plane 703 d ) may be formed onto (e.g., touching) or over middle layer 822 of level Lk. Layer 820 has height H 72 and width W 73 .

Now, FIG. 8A shows middle layer 822 of level Lk that includes (e.g., along with other materials that are beyond the edge of width W 73 ) or is (e.g., within width W 73 ) package device conductor material (e.g., pure conductor or metal) horizontal data signal transmit transmission lines 748 (e.g., a second type of data signal lines or traces, such as TX data signal lines) disposed between package device non-conductive (e.g., dielectric) material portions 703 e . Layer 822 separates upper layer 820 from lower layer 824 of level Lk. Layer 822 (e.g., lines 748 and portions 703 e ) may be formed onto (e.g., touching) or over lower layer 824 of level Lk. Layer 822 has height H 73 and width W 73 .

Horizontal data signal transmit transmission lines 748 are shown having height H 73 and width W 71 (a width between horizontally adjacent portions 703 e ). Non-conductive material portions 703 e are shown having height H 73 and width W 72 (a width between horizontally adjacent lines 748 ).

Next, FIG. 8A shows lower layer 824 of level Lk that includes (e.g., along with other materials that are beyond the edge of width W 73 ) or is (e.g., within width W 73 ) package device non-conductive material plane 703 f separating middle layer 822 from lowest layer 826 of level Lk. Layer 824 (e.g., plane 703 f ) may be formed onto (e.g., touching) or over lowest layer 826 of level Lk. Layer 824 has height H 72 and width W 73 .

Then, FIG. 8A shows lowest layer 826 of level Lk that includes (e.g., along with other materials that are beyond the edge of width W 73 ) or is (e.g., within width W 73 ) package device conductor material (e.g., pure conductor or metal) ground isolation plane 764 vertically separating lower layer 824 of level Lk from upper layer 830 of vertically adjacent level L 1 which is below level Lk. Layer 826 (e.g., plane 764 ) may vertically separate package device horizontal data signal transmit transmission lines 748 (e.g., a second type of data signal lines or traces, such as TX data signal lines disposed between package device non-conductive material portions 703 f ) of level Lk (e.g., layer 822 ) from package device horizontal data signal receive transmission lines 738 (e.g., a first type of data signal lines or traces, such as RX data signal lines disposed between package device non-conductive material portions 703 h ) of vertically adjacent level L 1 (e.g., layer 832 ) that is below level Lk.

Plane 764 may be directly physically connected to (e.g., formed in contact with), electrically coupled to, or directly attached to (e.g., touching) ground contacts or via contacts in the same layer 826 or level as plane 764 . In some cases the ground plane 764 is or includes ground signals from patch 704 , interposer 706 , package 710 , or another device attached to thereto, as described for plane 762 . In some cases this ground signal is a zero voltage direct current (DC) grounding signal (e.g., GND) or has a voltage, as described for plane 762 .

Layer 826 (e.g., plane 764 ) may be formed onto (e.g., touching) or over layer 830 of level L 1 . Layer 826 has height H 71 and width W 73 (e.g., as noted above for plane 760 ).

Level Lk is shown having upper layer 820 formed over or onto (e.g., touching) middle layer 822 which is formed over or onto lower layer 824 which is formed over or onto lowest layer 826 .

Next, FIG. 8A shows upper layer 830 of level L 1 that includes (e.g., along with other materials that are beyond the edge of width W 73 ) or is (e.g., within width W 73 ) package device non-conductive material plane 703 g separating layer 826 from middle layer 832 of level L 1 . Layer 830 (e.g., plane 703 g ) may be formed onto (e.g., touching) or over middle layer 832 of level L 1 . Layer 830 has height H 72 and width W 73 .

Now, FIG. 8A shows middle layer 832 of level L 1 that includes (e.g., along with other materials that are beyond the edge of width W 73 ) or is (e.g., within width W 73 ) package device conductor material (e.g., pure conductor or metal) horizontal data signal receive transmission lines 738 (e.g., a first type of data signal lines or traces, such as RX data signal lines) disposed between package device non-conductive (e.g., dielectric) material portions 703 h . Layer 832 separates upper layer 830 from lower layer 834 of level L 1 . Layer 832 (e.g., lines 738 and portions 703 h ) may be formed onto (e.g., touching) or over lower layer 834 of level L 1 . Layer 832 has height H 73 and width W 73 .

Horizontal data signal receive transmission lines 738 are shown having height H 73 and width W 71 (a width between horizontally adjacent portions 703 h ). Non-conductive material portions 703 h are shown having height H 73 and width W 72 (a width between horizontally adjacent lines 738 ).

Next, FIG. 8A shows lower layer 834 of level L 1 that includes (e.g., along with other materials that are beyond the edge of width W 73 ) or is (e.g., within width W 73 ) package device non-conductive material plane 703 i separating middle layer 832 from lowest layer 836 of level L 1 . Layer 834 (e.g., plane 703 i ) may be formed onto (e.g., touching) or over lowest layer 836 of level L 1 . Layer 834 has height H 72 and width W 73 .

Then, FIG. 8A shows lowest layer 836 of level L 1 that includes (e.g., along with other materials that are beyond the edge of width W 73 ) or is (e.g., within width W 73 ) package device conductor material (e.g., pure conductor or metal) ground isolation plane 766 vertically separating lower layer 834 of level L 1 from an upper layer of an vertically adjacent lower level of device package 750 which is below level L 1 . Layer 836 (e.g., plane 766 ) may vertically separate package device horizontal data signal receive transmission lines 738 (e.g., a first type of data signal lines or traces, such as RX data signal lines disposed between package device non-conductive material portions 703 h ) of level L 1 (e.g., layer 832 ) from package device horizontal data signal transmit transmission lines 748 (e.g., a second type of data signal lines or traces, such as RX data signal lines disposed between package device non-conductive material portions) of a vertically adjacent lower level of device package 750 that is below level L 1 .

Plane 766 may be directly physically connected to (e.g., formed in contact with), electrically coupled to, or directly attached to (e.g., touching) ground contacts or via contacts in the same layer 836 or level as plane 766 . In some cases the ground plane 766 is or includes ground signals from patch 704 , interposer 706 , package 710 , or another device attached to thereto, as described for plane 762 . In some cases this ground signal is a zero voltage direct current (DC) grounding signal (e.g., GND) or has a voltage, as described for plane 762 .

Layer 836 (e.g., plane 766 ) may be formed onto (e.g., touching) or over an upper layer of a vertically adjacent level of device package 750 that is below level L 1 . Layer 836 has height H 71 and width W 73 (e.g., as noted above for plane 760 ).

FIG. 8B is an exploded schematic cross-sectional side view of a ground isolated horizontal data signal transmission line package device of FIGS. 7 and 8A showing ground isolation planes separating horizontal data signal receive and transmit layers or levels. FIG. 8B shows an exploded schematic cross-sectional side view of ground isolation plane separated data signal package device 750 of FIGS. 7 and 8A such as a “package device” representing any of patch 704 (e.g., along length L 71 ), interposer 706 (e.g., along length L 72 ) or package 710 (e.g., along length L 73 and/or L 74 ). Package device 750 is shown having interconnect levels Lj, Lk and L 1 (e.g., see FIG. 8A ).

More specifically, FIG. 8B shows package device 750 having layers 805 - 836 along length L 7 p . Length L 7 p may represent any of lengths L 71 , L 72 , L 73 or L 74 .

In some cases, length L 7 p is between 1 millimeter (mm) and 60 mm. In some cases, length L 7 p is between 100 micrometers and 2 mm. In some cases, length L 7 p is between 10 and 14 mm. In some cases, length L 7 p is between 7 and 20 mm. In some cases, length L 7 p is between 5 and 30 mm. In some cases, length L 7 p is between 40 and 50 mm. It can be appreciated that length L 7 p may be an appropriate length of a (e.g., single, set or layer of) horizontal data signal receive or transmit lines within a package device, that is less than or greater than those mentioned above. In some cases, length L 7 p can span from 10 percent to an entire length of a device package.

It can be appreciated that length L 7 p may represent a length that is not a straight line but that curves one or more times between two horizontal locations that horizontal data signal transmission lines are routed between (e.g., horizontal locations 721 and 723 ) in a level of package device 750 . In some cases, length L 7 p will be different for different ones of the data signal transmit lines (RX and/or TX), such as depending on the routing of the lines between the two horizontal locations of that level. In some cases the two horizontal locations that horizontal data signal transmission lines are routed between (e.g., horizontal locations 721 and 723 ) in a level of package device 750 will be different for different ones of the horizontal data signal transmit lines (RX and/or TX) depending on the routing of the ends of the lines, such as for connection of the lines to signal contacts or via contacts of that level or another level of the package device.

FIG. 8B shows layer 805 that may include (e.g., along with other materials that are beyond the edge of length L 7 p ) or is (e.g., within length L 7 p ) ground isolation plane 760 vertically separating upper layer 810 of level Lj from a lowest layer of vertically adjacent level of device package 750 which is above level Lj. Layer 810 may include (e.g., along with other materials that are beyond the edge of length L 7 p ) or is (e.g., within length L 7 p ) package device non-conductive material plane 703 a separating layer 805 from middle layer 812 of level Lj. Layer 812 is shown including (e.g., along with other materials that are beyond the edge of length L 7 p ) or being (e.g., within length L 7 p ) package device conductor material (e.g., pure conductor or metal) horizontal data signal receive transmission lines 738 (e.g., a first type of data signal lines or traces, such as RX data signal lines) disposed between package device non-conductive (e.g., dielectric) material portions 703 b . For example, layer 812 is shown having “ 738 / 703 b ” which may represent lines 738 and/or portions 703 b extending along length L 7 p . Layer 814 may include (e.g., along with other materials that are beyond the edge of length L 7 p ) or be (e.g., within length L 7 p ) package device non-conductive material plane 703 c separating middle layer 812 from lowest layer 816 of level Lj. Layer 816 may include (e.g., along with other materials that are beyond the edge of length L 7 p ) or be (e.g., within length L 7 p ) package device conductor material (e.g., pure conductor or metal) ground isolation plane 762 vertically separating lower layer 814 of level Lj from upper layer 820 of vertically adjacent level Lk which is below level Lj.

FIG. 8B shows layer 820 that may include (e.g., along with other materials that are beyond the edge of length L 7 p ) or be (e.g., within length L 7 p ) package device non-conductive material plane 703 d separating layer 816 from middle layer 822 of level Lk. Layer 822 may include (e.g., along with other materials that are beyond the edge of length L 7 p ) or be (e.g., within length L 7 p ) package device conductor material (e.g., pure conductor or metal) horizontal data signal transmit transmission lines 748 (e.g., a second type of data signal lines or traces, such as TX data signal lines) disposed between package device non-conductive (e.g., dielectric) material portions 703 e . Layer 824 may include (e.g., along with other materials that are beyond the edge of length L 7 p ) or be (e.g., within length L 7 p ) package device non-conductive material plane 703 f separating middle layer 822 from lowest layer 826 of level Lk. Layer 826 may include (e.g., along with other materials that are beyond the edge of length L 7 p ) or be (e.g., within length L 7 p ) package device conductor material (e.g., pure conductor or metal) ground isolation plane 764 vertically separating lower layer 824 of level Lk from upper layer 830 of vertically adjacent level L 1 which is below level Lk.

FIG. 8B shows layer 830 that may include (e.g., along with other materials that are beyond the edge of length L 7 p ) or be (e.g., within length L 7 p ) package device non-conductive material plane 703 g separating layer 826 from middle layer 832 of level L 1 . Layer 832 may include (e.g., along with other materials that are beyond the edge of length L 7 p ) or be (e.g., within length L 7 p ) package device conductor material (e.g., pure conductor or metal) horizontal data signal receive transmission lines 743 (e.g., a first type of data signal lines or traces, such as RX data signal lines) disposed between package device non-conductive (e.g., dielectric) material portions 703 h . Layer 834 may include (e.g., along with other materials that are beyond the edge of length L 7 p ) or be (e.g., within length L 7 p ) package device non-conductive material plane 703 i separating middle layer 832 from lowest layer 836 of level L 1 . Layer 836 may include (e.g., along with other materials that are beyond the edge of length L 7 p ) or be (e.g., within length L 7 p ) package device conductor material (e.g., pure conductor or metal) ground isolation plane 766 vertically separating lower layer 834 of level L 1 from an upper layer of vertically adjacent level of device package 750 which is below level L 1 .

FIG. 9A shows a plot of eye height (EH) curves and eye width (EW) curves of an eye diagram produced by testing one of horizontal data signal transmission signal lines for a range of horizontal data signal transmission line width and spacing between horizontally adjacent signal lines. FIG. 9B shows an example of an eye-diagram for providing eye-height curves and eye-width curves of FIG. 9A . In some cases, the horizontal signal lines 738 and 748 of device 750 are impedance tuned (e.g., see FIG. 9A ) to minimize impedance discontinuity and crosstalk between vertically adjacent and horizontally adjacent ones of signal lines 738 or 748 (e.g., a channel) of device 750 . This may include performing such tuning to determine or identify a selected target width W 71 (and optionally height H 73 ) of one of signal lines 738 or 748 (e.g., given other set or known heights and widths such as noted below) that provides a the best channel performance as showed as the lowest amplitude cross point of eye height (EH) or eye width (EW) curves (e.g., see FIG. 9A ) of an eye diagram (e.g., see FIG. 9B ) produced by testing one of signal lines 738 or 748 . The EH and EW curves (e.g., curves 910 - 911 and 915 - 916 ) may be output signal measure (or computer modeled) at a location of the data signal line 738 or 748 when (e.g., as a result of running) one or more input test data signals are sent through length L 7 p of the data signal line. This testing may include sending simultaneous test signals, such as step up (e.g., ) and down (e.g., ) signals, through one type of line (e.g., RX lines 738 or TX lines 748 ), one level of lines (e.g., layer 812 , 822 or 832 ), or all lines 738 or 748 of device 750 having a given length L 7 p . This may include performing such tuning to determine or identify isolated horizontal data signal transmission line widths W 71 and spacing W 72 that are single line impedance tuned (e.g., see FIG. 9A ) in the routing segment of device 750 along the channel of signal lines 738 and 748 along length L 7 p.

Impedance tuning of the line may be based on or include as factors: horizontal data signal transmission line width W 71 , height H 73 , length L 7 p ; width W 72 between the line and a horizontally adjacent horizontal data signal transmission line of device 750 ; and height H 72 between the line and a vertically adjacent grounding plane of device 750 . In some cases, once the length L 7 p , width W 72 , height H 72 and height H 73 are known (e.g., predetermined or previously selected based on a specific design of a package device 750 ), then tuning is performed (e.g., computer simulation, actual “beta” device testing, or other laboratory testing) to determine or identify a range of width W 71 that provides the best channel performance as showed as the lowest amplitude cross point of eye height (EH) or eye width (EW) curves of an eye diagram produced by testing one of signal lines 738 or 748 .

For example, FIG. 9A shows a plot of eye height (EH) curves 910 and 911 ; and eye width (EW) curves 915 and 916 of an eye diagram (e.g., see FIG. 9B ) produced by testing one of horizontal data signal transmission signal lines 738 or 748 for a range of horizontal data signal transmission line width W 71 and spacing W 72 between horizontally adjacent signal lines 738 or 748 . The testing may include measuring or modeling an output signal in response to an input signals such as step up (e.g., ) and down (e.g., ) signals as noted above for FIG. 9A . EH curve 910 may be the EH curve for a first design or use of device 750 that is independent of (e.g., not based on or does not consider) the above noted factors (e.g., horizontal data signal transmission line width W 71 , height H 73 , length L 7 p ; width W 72 between the line and a horizontally adjacent horizontal data signal transmission line of device 750 ; and height H 72 between the line and a vertically adjacent grounding plane of device 750 ). EH curve 911 may be the EH curve for a second, different design or use of device 750 that is independent of the above noted factors. EW curve 915 may be the EW curve for the first design or use of device 750 that is independent of the above noted factors. EW curve 916 may be the EW curve for the second, different design or use of device 750 that is independent of the above noted factors.

In some cases, such a design or use may include where the different curves represent different manufacture variation combinations, such as where a low impedance package (e.g., package 710 ) is connected to high impedance interposer (e.g., interposer 706 ). In some cases, such a design or use may include where the different curves represent different corner combinations, or possible component variation combinations. In some cases, such a design or use may include where the different curves represent different designs or uses to tune the impedance to maximize the channel performance. In some cases, FIG. 9A shows EH and EW curves from various channels combining possible package and interposer manufacturing corners, (max/typical/min impedance corners from manufacturing variations). In some cases, for example, max Z patch+min Z interposer+max Z package, where Z denotes impedance. In some cases, the common or intersection area below the EH or EW curvers shows the channel EH/EW solution space. In some cases, the optimized impedance value is tied to the the cross point of EH or EW curves which provides the max EH/EW enveloping all the possible channel manufacture variations.

FIG. 9B shows an example of an eye-diagram 942 for providing eye-height curves 910 and 911 ; and eye width (EW) curves 915 and 916 of FIG. 9A . FIG. 9B shows diagram 940 having vertical y-axis 942 indicating the amplitude of the output signal measured when the test signal is applied to the data signal line. X-axis 944 is a time scale mapping the an in-phase version of output data signals 945 measured when the output signals are time synchronized to be in phase such that the step up and step down test signals would normally form a rectangle or square, but form the central hexagon shaped “eye” 946 . Eye 946 has y-axis eye-height 950 and x-axis eye-width 955 . Thus, EH curves 910 - 911 may be examples of eye-height 950 for different designs, and different signal line width W 71 and spacing W 72 for device 1150 . Thus, EW curves 915 - 916 may be examples of eye-width 955 for different designs, and different signal line width W 71 and spacing W 72 for device 1150 .

It can be appreciated that an eye diagram (e.g., as shown in FIG. 9B ) can be a common indicator of the quality of signals in high-speed digital transmissions (e.g., along data lines 738 and 748 ). An oscilloscope can be used to generate an eye diagram by overlaying sweeps of different segments of a long data stream driven by a master clock. The triggering edge may be positive or negative, but the displayed pulse that appears after a delay period may go either way; there is no way of knowing beforehand the value of an arbitrary bit. Therefore, when many such transitions have been overlaid, positive and negative pulses are superimposed on each other (e.g., as shown by signals 945 in FIG. 9B ). Overlaying many bits produces an eye diagram, so called because the resulting image looks like the opening of an eye (e.g., as shown by eye 946 in FIG. 9B ).

In an ideal world, eye diagrams (e.g., as shown by signals 945 in FIG. 9B ) would look like rectangular boxes. In reality, communications are imperfect, so the transitions do not line perfectly on top of each other, and an eye-shaped pattern results (e.g., as shown by eye 946 in FIG. 9B ). On an oscilloscope, the shape of an eye diagram will depend upon various types of triggering signals (e.g., input test signals), such as clock triggers, divided clock triggers, and pattern triggers. Differences in timing and amplitude from bit to bit cause the eye opening to shrink.

Also, for data links operating at gigahertz transmission speeds (e.g., device 750 ), variables that can affect the integrity of signals (e.g., the shape, EW and EH of the eye) can include: (e.g., data signal transmission lines 738 and 748 ) transmission-line effects; impedance mismatches; signal routing; termination schemes; grounding schemes; interference from other signal lines, connectors, and cables; and when signals on adjacent pairs of signal lines toggle, crosstalk among those signals on those lines can interfere with other signals on those lines (e.g., on lines 738 and 748 ).

In some cases, curves 910 - 911 and 915 - 916 are for a selected (e.g., predetermined, desired, constant or certain) length L 7 p of the horizontal data signal transmission line (e.g., RX line 738 or TX line 748 ) of ground isolation plane separated data signal package device 750 . In some cases, curves 910 - 911 and 915 - 916 are also for a selected signal line height H 73 and spacing H 72 between the signal line and a vertically adjacent ground plane or other signal line.

In some other cases, tuning includes knowing length L 7 p , width W 72 and height H 72 , then tuning to determine or identify a range of width W 71 and height H 73 that provides a predetermined or target impedance for the line.

More specifically, FIG. 9A shows graph 900 plotting the amplitude of tuning curves 910 - 911 and 915 - 916 along vertical Y-axis 920 for different pairs of width W 71 of a signal line (e.g., RX line 738 or TX line 748 ) and spacing W 72 between horizontally adjacent one of the signal lines (e.g., RX or TX lines 738 or 748 ) along horizontal X-axis 930 . Although FIG. 9A shows the amplitude of curves 910 - 911 and 915 - 916 on the same graph 900 , it can be appreciated that they may be on different graphs having different amplitude scaled Y-axis but the same X-axis 930 (e.g., the curves are all shown vertically scaled on graph 900 (e.g., moved up or down axis 920 ) to compare the cross points for the curves). Curves 910 - 911 and 915 - 916 may be output signal measure (or computer modeled) at a location of the data signal line when (e.g., as a result of running) the one or more test data signals are sent through length L 7 p of the data signal line (e.g., RX line 738 or TX line 748 ).

Graph 900 shows cross point 912 of EH curves 910 and 911 . I can be appreciated that curves 910 and 911 represent more than two curves, but that those curves have a lowest Y-axis cross point at point 912 . Graph 900 shows cross point 917 of EW curves 915 and 916 . I can be appreciated that curves 915 and 916 represent more than two curves, but that those curves have a lowest Y-axis cross point at point 917 .

FIG. 9A shows EW and EH curve amplitudes along vertical axis 920 having values W, X, Y and Z, such as representing different amplitudes for curves 910 - 911 or 915 - 916 (e.g., curves 915 - 916 or 910 - 911 may be scaled, respectively, to fit onto the same graph or plot). In some cases, for curves 910 - 911 values W, X, Y and Z, represent different linearly increasing EH signal amplitude values (e.g., voltage amplitudes of EH derived from a test signal) such as 0.1, 0.15, 0.2 and 0.25 volts. In some cases, for curves 915 - 916 values W, X, Y and Z, represent different linearly increasing EW signal time values (e.g., time values of EW derived from a test signal) such as 3.0, 3.5, 4.0 and 4.5 E-11 seconds.

FIG. 9A shows pairs of width W 71 /spacing W 72 along horizontal axis 930 having pair values A/B, C/D, E/F, G/H, I/J, K/L, M/N and O/P. In some cases, the aggregate (e.g., addition) of each pair of values (e.g., value A plus value B; or value O plus value P, etc.) represents the same sum or constant (e.g., such as pitch width PW 1 ). In some cases, the sum is between 100 and 200 um. In some cases, it is between 720 and 150 um. In some cases it is between 730 and 140 um. In some cases, pair values A/B represent width W 71 between 60 and 80 um, and spacing W 72 between 55 and 75 um; pair values O/P represent width W 71 between 25 and 45 um, and spacing W 72 between 90 and 110 um; and the other pairs are at linear intervals between values A/B and values O/P. In some cases, pair values A/B represent width/spacing of 70/65 um, pair values C/D represent width/spacing of 65/70 um, pair values E/F represent width/spacing of 60/75 um, pair values G/H represent width/spacing of 55/80 um, pair values I/J represent width/spacing of 50/85 um, pair values K/L represent width/spacing of 45/90 um, pair values M/N represent width/spacing of 40/95 um, and pair values O/P represent width/spacing of 35/100 um.

In some cases, Y-axis 920 represents eye-height or eye-width which are the figures of merit to quantify the channel performance of the tested signal line (e.g., RX line 738 or TX line 748 ); and X-axis 930 is the combination of signal line width W 71 /line spacing W 72 at constant pitch (line width W 71 +lines spacing W 72 =constant pitch PW, such as PW 1 ). According to embodiments, the impedance tuning of horizontal signal line 738 or 748 of device 750 includes (or is) selecting (or “tuning”) single horizontal routing signal line (e.g., TX and RX line) impedance, such as to select (or “tune” the TX and RX lines to or at) the combination of signal line width W 71 /line spacing W 72 to an optimized point to achieve the best channel performance as showed as the lowest cross point of EH or EW curves (e.g., such as shown in FIG. 9A ).

According to embodiments, the impedance tuning of horizontal signal line 738 or 748 of device 750 includes various possible selections of one or a range of locations on X-Axis 930 selected based on or as a result of a calculation using EH and EW cross point 912 and/or point 917 . It can be appreciated that such tuning may include selecting or identifying one or a range of width/spacing W 71 /W 2 along axis 930 for one or both of signal lines 738 and 748 , based on or as a result of a calculation using cross point 912 and/or point 917 .

In some cases, such impedance tuning includes or is selecting the lowest amplitude cross point 912 of eye height (EH) curves 910 - 912 or of eye width (EW) curves 915 - 916 of an eye diagram produced by testing one of signal lines 738 or 748 . Here, for example, as shown in FIG. 9A , X-axis 930 location I/J which is under point 912 ; or a location at midpoint between I/J and K/L which is under point 912 may be chosen for width W 71 and spacing W 72 for one or both of signal lines 738 and 748 . In some cases, one of those locations may be used for both of signal lines 738 and 748 . In some cases, a range of width W 71 and spacing W 72 around either of those locations (e.g., a W 71 and W 72 tolerance, such as 5 or 10 percent around either location) may be used for both of signal lines 738 and 748 . In some cases, a range of width W 71 and spacing W 72 between those locations (e.g., a W 71 and W 72 tolerance within that range or any location within that range) may be used for both of signal lines 738 and 748 .

According to some embodiments, the impedance tuning includes or is selecting the lowest amplitude cross point 912 and point 917 produced by testing one of signal lines 738 or 748 . Here, for example, as shown in FIG. 9A , an X-axis 930 location between (e.g., midpoint between, and average of, or another statistical calculation between) I/J which is under point 912 and a midpoint between I/J and K/L which is under point 912 may be chosen for width W 71 and spacing W 72 for one or both of signal lines 738 and 748 . In some cases, the location between may be used for both of signal lines 738 and 748 . In some cases, a range of width W 71 and spacing W 72 around the location between (e.g., a W 71 and W 72 tolerance, such as 5 or 10 percent around either location) may be used for both of signal lines 738 and 748 . It can be appreciated that various other appropriate locations may be selected based on cross points 912 and 917 .

It can be appreciated that such tuning as noted above may be for or represent tuning of a single one of, all of a level of, or all of lines 738 or 748 of device 750 . It can be appreciated that such tuning as noted above may be represent by curves different than the convex curves 910 - 911 and 915 - 916 shown in FIG. 9A , such as where the selected width W 71 /spacing W 72 along axis 930 is selected to be at the highest point of the different curve along the vertical axis 920 .

In some cases, this impedance tuning provides (e.g., by determining or identifying a range of or selected target width W 71 and spacing W 72 for both of signal lines 738 and 748 ): (1) the best channel performance for lines 738 and 748 (e.g., having length L 7 p ; width W 71 ; width W 72 between the line and a horizontally adjacent horizontal data signal transmission line of device 750 ; and height H 72 between the line and a vertically adjacent grounding plane of device 750 ), (2) electrical isolation of horizontal data signal transmission lines (e.g., signal lines 738 and 748 ) that are single line impedance tuned in the routing segment of device 750 along the channel (e.g., signal lines 738 or 748 along length L 7 p ), and (3) minimized impedance discontinuity and crosstalk between vertically adjacent and horizontally adjacent ones of signal lines 738 or 748 of device 750 .

In some cases, the tuning above includes separately tuning lines 738 and 748 of interposer 706 , patch 704 and package 710 . In some cases, it includes separately tuning lines 738 and 748 of interposer 706 and patch 704 or package 710 . In some cases, the tuning above includes tuning lines 738 and 748 of interposer 706 are tuned, but the signal lines of patch 704 and package 710 are not. In some cases, the width W 71 and spacing W 72 of lines 738 and 748 of interposer 706 are determined by tuning as noted above; and the width W 71 and spacing W 72 of patch 704 and package 710 are determined based on other factors, or design parameters that do not include the tuning noted above.

FIG. 10 is a flow chart illustrating a process for forming a ground isolated horizontal data signal transmission line package device, according to embodiments described herein. FIG. 10 shows process 1000 which may be a process for forming embodiments described herein of package 750 of any of FIGS. 1-3 . It may also be a process for forming certain levels or layers of FIGS. 5-12 as noted further below. In some cases, process 1000 is a process for forming a ground isolated horizontal data signal transmission line package device that has ground isolation planes separating horizontal data signal receive and transmit layers or levels (e.g., interconnect levels). Each level may have an upper layer of non-conductive (e.g., dielectric) material; a middle layer having conductor material (e.g., pure conductor or metal) data signal lines (e.g., traces) between non-conductive (e.g., dielectric) material portions; a lower layer of non-conductive (e.g., dielectric) material; and a lowest level ground isolation plane of conductor material (e.g., pure conductor or metal).

Process 1000 begins at optional block 1010 at which a first (e.g., lower) interconnect level Lk of a package device is formed, having a first type (e.g., RX or TX) of package device conductor material horizontal data signal transmission lines (e.g., a first type of data signal lines or traces, such as RX or TX data signal lines disposed between package device non-conductive material portions) of the first interconnect level Lk.

In some cases, block 1010 may only include forming middle layer 822 of level Lk with first type of data TX signal 748 lines disposed horizontally between dielectric material portions 703 e ; and forming upper layer 820 of or having dielectric material onto layer 822 . In some cases, block 1010 includes first forming lowest layer 826 , then layer forming lower layer 824 onto layer 826 , then forming middle layer 822 (e.g., as noted above) onto layer 824 (and then forming upper layer 820 onto layer 822 as noted above).

A first example embodiment of block 1010 may include (e.g., prior to forming the upper layer 820 ), forming a mask (e.g., dry film resist (DFR), not shown) over a top surface of a lower layer 824 (e.g., of ajinomoto build up films (ABF)), the mask having (1) first openings over layer 824 in which to form the first type of data TX signal 748 lines of layer 822 . In some cases, the first openings may be horizontally open to and in communication with different, second openings in the mask over layer 824 in which data TX signal contacts or data TX signal via contacts will be formed. Some of these cases may include electroless plating of a seed layer of the conductor material over layer 824 , prior to forming the masks layer. In this case, block 1010 may then include simultaneously forming conductive material (e.g., plating on the exposed seed layer of the openings) to form the data TX signal 748 lines of layer 822 in the first openings (and optionally the data TX signal or data TX signal via contacts in the second openings of layer 822 ).

In some of these cases, simultaneously forming the conductive material may include forming that conductive material of all of data TX signal 748 lines of layer 822 (and optionally all of the data TX signal or data TX signal via contacts in the second openings of layer 822 ) during the same process, plating, deposition or growth of that conductive material in the first (and optionally second) openings. In some cases, simultaneously forming the conductive material includes electrolytic plating of conductor material in the first (and optionally second) openings (e.g., on the electroless plating of seed layer).

In some cases of these, after simultaneously forming the conductive material, the mask (e.g., DFR) is removed. This removal may also include removing the seed layer from between the openings. Then dielectric material 703 e (e.g., ajinomoto build up films (ABF)) may be deposited where the mask was removed. In some cases, forming the mask includes forming a blanket layer of mask material and etching the blanket layer to form the first (and optionally second) openings.

Next, at block 7020 a lowest layer of a second (e.g., upper) level Lj of the package device is formed over or onto (e.g., touching) level Lk; level Lj having a conductor material (e.g., pure conductor or metal) ground isolation plane vertically separating the first type (e.g., RX or TX) of package device conductor material horizontal data signal transmission lines of the first level Lk, from a second type (e.g., TX or RX; the opposite of the first type RX or TX, respectively) of package device conductor material horizontal data signal transmission lines (e.g., a second type of data signal lines or traces, such as TX or RX data signal lines disposed between package device non-conductive material portions) of vertically adjacent level Lj that is to be formed above level Lk.

In some cases, block 7020 may only include forming lowest layer 816 of level Lj having a conductor material ground isolation plane 762 onto upper layer 820 of level Lk; and forming middle layer 812 of level Lj with second type of data RX signal 738 lines disposed horizontally between dielectric material portions 703 b . In some cases, block 7020 includes first forming lowest layer 816 onto layer 820 (e.g., as noted above), then forming lower layer 814 onto layer 816 , then forming middle layer 812 (e.g., as noted above) onto layer 814 ; and then forming upper layer 810 of or having dielectric material onto layer 812 .

A first example embodiment of block 1020 may include (e.g., prior to forming the middle layer 812 ), forming a mask (e.g., DFR, not shown) over a top surface of upper layer 820 (e.g., of ajinomoto build up film (ABF)) of level Lk, the mask having (1) a first opening over layer 820 in which to form isolation plane 762 of layer 816 . In some cases, the first opening may be horizontally open to and in communication with different, second openings in the mask over layer 820 in which ground contacts or ground vial contacts will be formed. Some of these cases may include electroless plating of a seed layer of the conductor material over layer 820 , prior to forming the masks layer.

In this case, block 1020 may then include simultaneously forming conductive material (e.g., plating on the exposed seed layer of the openings) to form the isolation plane 762 of layer 816 in the first openings (and optionally the ground contacts or ground vial contacts in the second openings of layer 816 ).

In some of these cases, simultaneously forming the conductive material may include forming that conductive material of all of isolation plane 762 of layer 816 (and optionally all of the ground contacts or ground vial contacts in the second openings of layer 816 ) during the same process, deposition or growth of that conductive material in the first (and optionally second) openings. In some cases, simultaneously forming the conductive material includes electrolytic plating of conductor material in the first (and optionally second) openings (e.g., on the electroless plating of seed layer).

In some cases of these, after simultaneously forming the conductive material, the mask (e.g., DFR) is removed. This removal may also include removing the seed layer from between the openings. Then dielectric material (e.g., ajinomoto build up film (ABF)) may be deposited where the mask was removed. In some cases, forming the mask includes forming a blanket layer of mask material and etching the blanket layer to form the first (and optionally second) openings.

Next, at optional block 1030 a layer of the second interconnect level Lj of the package device is formed over or onto (e.g., touching) level Lk; level Lj having the second type (e.g., TX or RX; the opposite of the first type RX or TX, respectively) of package device conductor material horizontal data signal transmission lines (e.g., a second type of data signal lines or traces, such as TX or RX data signal lines disposed between package device non-conductive material portions) of level Lj formed above level Lk.

In some cases, block 1030 may only include forming middle layer 812 of level LJ with second type of data TX signal 748 lines disposed horizontally between dielectric material portions 703 b ; and forming upper layer 810 of or having dielectric material onto layer 812 . In some cases, block 1030 includes first forming lowest layer 816 , then layer forming lower layer 814 onto layer 816 , then forming middle layer 812 (e.g., as noted above) onto layer 814 (and then forming upper layer 810 onto layer 812 as noted above).

A first example embodiment of block 1030 may include (e.g., prior to forming the upper layer 810 ), forming a mask (e.g., DFR, not shown) over a top surface of a lower layer 814 (e.g., of ajinomoto build up film (ABF)), the mask having (1) first openings over layer 814 in which to form the second type of data RX signal 738 lines of layer 812 . In some cases, the first openings may be horizontally open to and in communication with different, second openings in the mask over layer 814 in which data RX signal contacts or data RX signal via contacts will be formed. Some of these cases may include electroless plating of a seed layer of the conductor material over layer 814 , prior to forming the masks layer. In this case, block 1030 may then include simultaneously forming conductive material (e.g., plating on the exposed seed layer of the openings) to form the data RX signal 738 lines of layer 812 in the first openings (and optionally the data RX signal or data RX signal via contacts in the second openings of layer 812 ).

In some of these cases, simultaneously forming the conductive material may include forming that conductive material of all of data RX signal 738 lines of layer 812 (and optionally all of the data RX signal or data RX signal via contacts in the second openings of layer 812 ) during the same process, deposition or growth of that conductive material in the first (and optionally second) openings. In some cases, simultaneously forming the conductive material includes electrolytic plating of conductor material in the first (and optionally second) openings (e.g., on the electroless plating of seed layer).

In some cases of these, after simultaneously forming the conductive material, the mask (e.g., DFR) is removed. This removal may also include removing the seed layer from between the openings. Then dielectric material 703 b (e.g., of ajinomoto build up film (ABF)) may be deposited where the mask was removed. In some cases, forming the mask includes forming a blanket layer of mask material and etching the blanket layer to form the first (and optionally second) openings.

In some cases, deposition or growing of conductor material in blocks 1010 , 1020 and 1030 may be by processes for forming package devices as noted further below. In some cases, deposition or growing of dielectric material in blocks 1010 , 1020 and 1030 may be by processes for forming package devices as noted further below. It can be appreciated that the descriptions herein for blocks 1010 , 1020 and 1030 may also include metal hot-press of ABF; pre-cure of ABF; CO2 or UV-YAG laser of ABF; drying of Cu seed layer; and/or flash etching and annealing of to full cure ABF as needed to perform the descriptions herein of blocks 1010 , 1020 and 1030 .

Next, at return arrow 1040 , process 1000 may continue by returning to a second performance of optional block 1010 at which another “first” (e.g., lower) interconnect level of a package device is formed, having a first type (e.g., RX or TX) of package device conductor material horizontal data signal transmission lines. Then, process 1000 may proceed with a second performance of block 1020 , and a second performance of optional block 1030 . Process 1000 may continue this way until a predetermined or sufficient number of levels or return processes are completed to form a desired package device 750 . In some cases, it may repeat 3 to 10 times.

Next, in a first example case of process 1000 , block 1010 may only include forming layer 822 as described herein; block 1020 may only include forming layer 816 as described herein; and block 1030 may only include forming layer 812 as described herein. In a second example case, block 1010 may include forming layers 820 , 822 and 824 as described herein; block 1020 may include forming layer 816 as described herein; and block 1030 may include forming layers 810 , 812 and 814 as described herein.

In a third example case, block 1010 may include forming layer 832 as described herein; block 1020 may include forming layer 826 as described herein; and block 1030 may include forming layer 822 as described herein. In a fourth example case, block 1010 may include forming layers 830 , 832 and 834 as described herein; block 1020 may include forming layer 826 as described herein; and block 1030 may include forming layers 820 , 822 and 824 as described herein.

Some cases may include the first and third example cases above (e.g., the third followed by the first example case). Some cases may include the second and fourth example cases above (e.g., the fourth followed by the second example case).

It can be appreciated that although FIGS. 7-10 show and corresponding descriptions describe embodiments for level Lj having RX signal lines, level Lk having TX signal lines and level L 1 having RX signal lines, the figures and descriptions also apply to embodiments where there are two layers of RX signals between planes 760 and 762 ; two layers of TX signals between planes 762 and 764 ; and two layers of RX signals between planes 764 and 766 ; etc.

For example, an embodiment of a process similar to process 1000 of FIG. 10 may include performing block 1010 twice before proceeding to block 1020 , thus forming first (e.g., lower) interconnect level Lk of a package device having two layers of the first type (e.g., RX or TX) of package device conductor material horizontal data signal transmission lines (e.g., a first type of data signal lines or traces, such as RX or TX data signal lines disposed between package device non-conductive material portions) of the first interconnect level Lk. Then performing block 1020 to form the ground plane. Then performing block 1030 twice after block 1020 , thus forming second (e.g., upper) interconnect level Lj of a package device having two layers of the second type (e.g., TX or RX; the opposite of the first type RX or TX, respectively) of package device conductor material horizontal data signal transmission lines (e.g., a first type of data signal lines or traces, such as TX or RX data signal lines disposed between package device non-conductive material portions) of the second interconnect level Lj.

In some cases, another embodiment of a process similar to process 1000 of FIG. 10 may include performing block 1010 three or four times; performing block 1020 ; then performing lock 1030 three or four times (e.g., the same number of times as block 1010 ).

Some cases, the above two embodiments of a process similar to process 1000 of FIG. 10 may include may include the first and third example cases of process 1000 above (e.g., the third followed by the first example case). Some cases may include the second and fourth example cases above (e.g., the fourth followed by the second example case).

It can be appreciated that although FIGS. 7-10 show and corresponding descriptions describe embodiments for level Lj having RX signal lines, level Lk having TX signal lines and level L 1 having RX signal lines, the figures and descriptions also apply to embodiments where the order can be reversed such as for embodiments where level Lj has TX signal lines, level Lk has RX signal lines and level L 1 has TX signal lines.

It can be appreciated that although FIGS. 7-10 show and corresponding descriptions describe embodiments for levels having RX signal lines and TX signal lines, the figures and descriptions also apply to embodiments where other types of information, clock, timing, alternating current (AC) or data signals can be on those signal lines.

In some cases, ground planes 760 - 766 are each electronically coupled to (e.g., touching, formed with, or directly attached to) ground contacts of device 750 , such as ground contacts disposed in the same layer as each ground plane, respectively. They may also each extend as a flat plane disposed between all of the horizontal TX and RX signal contacts of the levels above and blow each ground plane, respectively. For example, in some cases, ground isolation plane 762 extends as a horizontal flat ground isolation plane of conductive material disposed in a vertical position between all of the horizontal RX signal lines of level Lj (including embodiments where there are 1, 2, 3, or 4 layers of RX signal lines) and all of the horizontal TX signal lines of level Lk (including embodiments where there are 1, 2, 3, or 4 layers of RX signal lines); and/or plane 764 extends as a horizontal flat ground isolation plane of conductive material disposed in a vertical position between all of the horizontal TX signal lines of level Lk (including embodiments where there are 1, 2, 3, or 4 layers of RX signal lines) and all of the horizontal RX signal lines of level L 1 (including embodiments where there are 1, 2, 3, or 4 layers of RX signal lines).

In some cases, ground planes of package device 750 (e.g., planes 760 - 766 ) may each be a ground isolation plane or planar structure across a layer vertically between each horizontal data signal transmission line (e.g., RX or TX) of a one level and all data signal transmission lines of all levels above (or below) that ground plane (e.g., that one level), thus reducing (e.g., by a factor or 2, 3, 5 or 10 times) “data signal transmission line” crosstalk between each of the horizontal data signal transmission lines of the one level (e.g., an “agressor”) and all data signal transmission lines of all levels above (or below) that ground plane (e.g., that one level).

For example, in some cases, ground isolation plane 762 extends as a horizontal flat ground isolation plane of conductive material disposed in a vertical position between all of the horizontal RX signal lines of level Lj (including embodiments where there are 1, 2, 3, or 4 layers of RX signal lines) and each of the horizontal TX signal lines of level Lk (including embodiments where there are 1, 2, 3, or 4 layers of TX signal lines), thus reducing “data signal transmission line” crosstalk produced or created by all of the horizontal RX signal lines of level Lj (e.g., “agressors”) from reaching each of the horizontal TX signal lines of level Lk. Also, in some cases, ground isolation plane 764 extends as a horizontal flat ground isolation plane of conductive material disposed in a vertical position between all of the horizontal TX signal lines of level Lk (including embodiments where there are 1, 2, 3, or 4 layers of RX signal lines) and each of the horizontal RX signal lines of level L 1 (including embodiments where there are 1, 2, 3, or 4 layers of RX signal lines), thus reducing “data signal transmission line” crosstalk produced or created by all of the horizontal TX signal lines of level Lk (e.g., “agressors”) from reaching each of the horizontal RX signal lines of level L 1 .

For example, by being layers of conductive material electrically grounded (e.g., having a ground signal), each of ground isolation planes 762 and 764 (and optionally 760 and 762 ) extend as horizontal flat ground isolation planes of conductive material that may absorb, or shield electromagnetic crosstalk signals produced by one data signal transmission line of the vertically adjacent levels above (or below) the plane (e.g., an “agressor”), from reaching each of the data signal transmission line of the one level, due to the amount of grounded conductive material, and location of the conductive grounded material between the two levels. In some cases, each plane absorbing or shielding the electromagnetic crosstalk signals includes reducing electrical crosstalk caused by undesired capacitive, inductive, or conductive coupling of a first data signal type (e.g., RX or TX) received or transmitted through one of the horizontal data signal transmission lines of the vertically adjacent levels (e.g., an “agressor”) from reaching (e.g., effecting or being mirrored in) a second data signal type (e.g., TX or RX; the opposite of the first type RX or TX, respectively) received or transmitted through each or any of the horizontal data signal transmission lines of the one level that the ground plane shields (e.g., where the plane is vetically between the vertically adjacent levels and the one level).

Such electrical crosstalk may include interference caused by two data signal types becoming partially superimposed on each other due to electromagnetic (inductive) or electrostatic (capacitive) coupling between the horizontal data signal transmission lines (e.g., conductive material) carrying the signals in vertically adjacent level (e.g., as noted above). Such electrical crosstalk may include where the magnetic field from changing current flow of a first horizontal data signal transmission line (e.g., an “agressor”) induces current in a second horizontal data signal transmission line of another vertically adjacent level (e.g., as noted above). In some cases, the cross talk that is reduced is caused or dominated by mutual inductance and capacitance between the two signal lines.

In some embodiments, any or each of ground isolation plane 760 , 762 , 764 or 766 reduces electrical crosstalk as noted above (1) without increasing the distance or spacing W 72 between the horizontal data signal transmission lines, and (2) without re-ordering any horizontal order or sequence of the horizontal data signal transmission lines in a layer or level.

In some cases, a ground isolated horizontal data signal transmission line package device has ground isolation lines surrounding horizontal data signal transmission lines (e.g., conductor material or metal signal traces) that are routed through the package device. The isolation lines may surround (e.g., vertically and horizontally separating) adjacent horizontal data signal receive (RX) and transmit (TX) signal lines of the package device layers or levels (e.g., interconnect levels).

More specifically, each level may have an upper layer of non-conductive (e.g., dielectric) material; and a lower layer having conductor material (e.g., pure conductor or metal) data signal lines (e.g., traces) between (1) horizontally adjacent non-conductive (e.g., dielectric) material portions that are between (2) horizontally adjacent ground isolation lines (e.g., traces) of conductor material (e.g., pure conductor or metal). One non-conductive material portion may be horizontally adjacent, to the outside of each data signal line; and one ground isolation line may be horizontally adjacent, to the outside of each of the non-conductive material portions. In other words, two ground isolation lines horizontally surround two non-conductive material portions that horizontally surround each data signal line. In some cases, the two ground isolation lines are described as horizontally surrounding (e.g., are horizontally to the left and right of) each data signal line.

Each level may also have horizontal (e.g., widthwise) staggered spacing of its lower layer conductor material data signal lines as compared to the ground isolation lines of a vertically adjacent level above it, so that its lower layer conductor material data signal lines are disposed directly below ground isolation lines of the vertically adjacent level above it. Here, the vertically adjacent non-conductive (e.g., dielectric) material upper layer of the level may vertically separate the lower layer conductor material data signal lines of the level from the ground isolation lines of the vertically adjacent level above it. Similarly, each level may also have staggered spacing of its lower layer conductor material data signal lines as compared to the ground isolation lines of a vertically adjacent level below it, so that its lower layer conductor material data signal lines are disposed directly above ground isolation lines of the vertically adjacent level below it. Here, the vertically adjacent non-conductive (e.g., dielectric) material upper layer of the vertically adjacent level below it may vertically separate the lower layer conductor material data signal lines of the level from the ground isolation lines of the vertically adjacent level below it. In other words, two ground isolation lines vertically surround two non-conductive material layers that vertically surround each data signal line. In some cases, the two ground isolation lines are described as vertically surrounding (e.g., are vertically above and below) each data signal line.

The combination of the two ground isolation lines are horizontally surrounding each data signal line; and the two ground isolation lines vertically surrounding each data signal line may be described as four ground isolation lines “coaxially” surrounding each data signal line.

The ground isolation lines horizontally, vertically or coaxially surrounding the horizontal data signal transmission lines may reduce crosstalk between and increase isolation of horizontally and vertically adjacent ones of the horizontal data signal transmission lines. In some cases, the isolation lines reduce crosstalk between vertically adjacent levels (e.g., between TX signal lines and RX signal lines in levels above and below each other), and decrease crosstalk between the horizontal data signal transmission lines that are horizontally adjacent to each other (e.g., in a single vertical level or layer of the device package). This embodiment of a ground isolated horizontal data signal transmission line package device may be described as a ground isolation “coaxial” line separated data signal package device (e.g., see device 1150 ).

FIG. 11 is schematic cross-sectional side and length views of a computing system, including ground isolated horizontal data signal transmission line package devices. FIG. 11 shows a schematic cross-sectional side view of computing system 1100 , including ground isolated horizontal data signal transmission line package devices, such as patch 1104 , interposer 1106 and package 1110 . In some cases, system 1100 has CPU chip 702 mounted on patch 1104 , which is mounted on interposer 1106 at first location 707 . It also shows chip 708 mounted on package 1110 at first location 701 ; and chip 709 mounted on chip 1110 at second location 711 . Package 1110 is mounted on interposer 1106 at second location 713 . For example, a bottom surface of chip 702 is mounted on top surface 705 of patch 1104 using solder bumps or bump grid array (BGA) 712 . A bottom surface of patch 1104 is mounted on top surface 705 of interposer 1106 at first location 707 using solder bumps or BGA 714 . Also, a bottom surface of chip 708 is mounted on top surface 703 of package 1110 at first location 701 using solder bumps or BGA 718 . A bottom surface of chip 709 is mounted on surface 703 of package 1110 at location 711 using solder bumps or BGA 719 . A bottom surface of package 1110 is mounted on surface 705 of interposer 1106 at second location 713 using solder bumps or BGA 716 .

In some cases the only difference between system 1100 and 700 is the difference between patch 1104 and 704 ; interposer 1106 and 106 ; and package 1110 and 110 . In some cases the only difference between patch 1104 and 704 ; interposer 1106 and 106 ; and package 1110 and 110 is that patch 1104 , interposer 1106 , and package 1110 are or have ground isolation “coaxial” line separated data signal package device 1150 instead of ground isolation plane separated data signal package device 750 . In other words, in some cases the only difference between patch 1104 and 704 ; interposer 1106 and 106 ; and package 1110 and 110 is that horizontal data signal transmission lines 722 , 726 , 730 and 735 are or have ground isolation “coaxial” line separated data signal package device 1150 in place of ground isolation plane separated data signal package device 750 .

FIG. 11 also show vertical data signal transmission lines 720 originating in chip 702 and extending vertically downward through bumps 712 and into vertical levels of patch 1104 , such as downward to levels Lm-Lq of patch 1104 at first horizontal location 721 .

FIG. 11 also shows patch horizontal data signal transmission lines 722 originating at first horizontal location 721 in levels Lm-Lq of patch 1104 and extend horizontally through level Lm-Lq along length L 71 of levels Lm-Lq to second horizontal location 723 in levels Lm-Lq of patch 1104 .

Next, FIG. 11 shows vertical data signal transmission lines 724 originating in patch 1104 and extending vertically downward through bumps 714 and into vertical levels of interposer 1106 , such as downward to levels Lm-Lq of interposer 1106 at first horizontal location 725 .

FIG. 11 also shows interposer horizontal data signal transmission lines 726 originating at first horizontal location 725 in levels Lm-Lq of interposer 1106 and extend horizontally through levels Lm-Lq along length L 72 of levels Lm-Lq to second horizontal location 727 in levels Lm-Lq of interposer 1106 .

Next, FIG. 11 shows vertical data signal transmission lines 128 originating in interposer 1106 , such as originating at levels Lm-Lq at second horizontal location 727 of interposer 1106 and extending vertically upward to levels Lm-Lq of package 1110 at first horizontal location 729 of package 1110 .

FIG. 11 also shows package device horizontal data signal transmission lines 730 originating at first horizontal location 725 in levels Lm-Lq of package 1110 and extend horizontally through levels Lm-Lq along length L 73 of levels Lm-Lq to second horizontal location 731 in levels Lm-Lq of package 1110 .

Next, FIG. 11 shows vertical data signal transmission lines 732 originating in package 1110 , such as originating at levels Lm-Lq at second horizontal location 731 of package 1110 and extending upward to and terminate at a bottom surface of chip 708 .

FIG. 11 also show vertical data signal transmission lines 733 originating in chip 708 and extending vertically downward to levels Lm-Lq of package 1110 at first horizontal location 734 of package 1110 .

FIG. 11 also shows package device horizontal data signal transmission lines 735 originating at third horizontal location 734 in levels Lm-Lq of package 1110 and extend horizontally through levels Lm-Lq along length L 74 of levels Lm-Lq to second horizontal location 736 in levels Lm-Lq of package 1110 .

Next, FIG. 11 shows vertical data signal transmission lines 737 originating in package 110 , such as originating at levels Lm-Lq at fourth horizontal location 736 of package 1110 , and extending upward to and terminate at a bottom surface of chip 709 .

In some cases the data signal transmission signals of lines 720 , 722 , 724 , 726 , 128 , 730 , 732 , 733 , 735 and/or 737 are or include data signal transmission signals to an IC chip (e.g., chip 702 , 708 or 709 ), patch 1104 , interposer 1106 , package 1110 , or another device attached to thereto, such as described for FIG. 1 .

In some cases, lines 720 , 722 and 724 also include power and ground signal lines or traces, such as described for FIG. 7 (not shown) that also extend horizontally from location 721 to location 723 within levels Lm-Lq, or other levels of patch 1104 .

In some cases, lines 724 , 726 and 128 also include power and ground signal lines or traces, such as described for FIG. 7 (not shown) that also extend horizontally from location 725 to location 727 within levels Lm-Lq, or other levels of interposer 1106 . In some cases the power and ground signals transmitted and received (or existing) on the power and ground signal lines of lines 720 , 722 , 724 and 726 originate at or are provided by patch 1104 or interposer 1106 , or another device attached to thereto, such as described for FIG. 1 .

In some cases, lines 128 , 730 and 732 also include power and ground signal lines or traces, such as described for FIG. 7 (not shown) that also extend horizontally from location 729 to location 731 within levels Lm-Lq, or other levels of package 1104 . In some cases the power and ground signals transmitted and received (or existing) on the power and ground signal lines of lines 128 , 730 and 732 originate at or are provided by package 1110 or interposer 1106 , or another device attached to thereto, such as described for FIG. 1 .

In some cases, lines 733 , 735 and 737 also include power and ground signal lines or traces, such as described for FIG. 7 (not shown) that also extend horizontally from location 734 to location 736 within levels Lm-Lq, or other levels of package 1104 . In some cases the power and ground signals transmitted and received (or existing) on the power and ground signal lines of lines 733 , 735 and 737 originate at or are provided by package 1110 or interposer 1106 , or another device attached to thereto, such as described for FIG. 1 .

FIG. 11 also shows a schematic cross-sectional length view of a ground isolated horizontal data signal transmission line package device. In this case, the package device is ground isolation “coaxial” line separated data signal package device 1150 (e.g., instead of ground isolation plane separated data signal package device 750 of FIG. 1 ). Device 1150 may be a “package device” representing any of patch 1104 , interposer 1106 or package 1110 . It can be appreciated that device 1150 may represent another package device having horizontal data transmission lines.

In some cases, package device 1150 represents horizontal data signal transmission lines 722 of patch 1104 through perspective A-A′; horizontal data signal transmission lines 726 of interposer 1106 through perspective B-B′; horizontal data signal transmission lines 730 of package 1110 through perspective C-C′; or horizontal data signal transmission lines 735 of package 1110 through perspective D-D′, such as described for package device 750 and patch 704 , interposer 706 or package 710 .

In some cases, package device 1150 has package device ground isolation lines 1160 of level Lm vertically separating each of package device horizontal data signal receive transmission lines 738 (e.g., data signal RX 738 ) of level Ln from each of vertically adjacent (e.g., directly above; or above, parallel to, and having at least part of the width of the two transmission lines overlapping along length L 71 ) horizontal data signal receive or transmit transmission line (e.g., data signal RX or TX lines) of a level or layer of the package device 1150 that is above level Lm. Lines 1160 of level Lm also separate each of the horizontal data signal lines of the level above level Lm from each of vertically adjacent (e.g., directly below; or below, parallel to, and having at least part of the width of the two transmission lines overlapping along length L 71 ) horizontal data signal receive RX transmission lines 738 of level Ln.

In some cases, package device 1150 has package device ground isolation lines 1160 of level Lm horizontally separating each of package device horizontal data signal receive transmission lines 738 (e.g., data signal RX 738 ) of level Lm from each of horizontally adjacent (e.g., directly beside such as to the left and right; beside, parallel to, and having at least part of the height of the two transmission lines overlapping along height H 73 ) horizontal data signal receive transmission lines 738 (e.g., data signal RX lines) of level Lm of package device 1150 .

In some cases, package device 1150 has package device ground isolation lines 1162 of level Ln vertically separating each of package device horizontal data signal transmit transmission lines 748 (e.g., data signal TX 748 ) of level Lo from each of vertically adjacent (e.g., directly above; or above, parallel to, and having at least part of the width of the two transmission lines overlapping along length L 71 ) horizontal data signal receive transmission line (e.g., data signal RX line) of level Lm of the package device 1150 that is above level Ln. Lines 1162 of level Ln also separate each horizontal data signal RX line 738 of level Lm from each of vertically adjacent (e.g., directly below; or below, parallel to, and having at least part of the width of the two transmission lines overlapping along length L 71 ) horizontal data signal transmit TX transmission line 748 of level Lo below level Lm.

In some cases, package device 1150 has package device ground isolation lines 1162 of level Ln horizontally separating each of package device horizontal data signal receive transmission lines 738 (e.g., data signal RX 738 ) of level Ln from each of horizontally adjacent (e.g., directly beside such as to the left and right; beside, parallel to, and having at least part of the height of the two transmission lines overlapping along height H 73 ) horizontal data signal receive transmission lines 738 (e.g., data signal RX lines) of level Ln of package device 1150 .

In some cases, package device 1150 has package device ground isolation lines 1164 of level Lo vertically separating each of package device horizontal data signal transmit transmission lines 748 (e.g., data signal TX 748 ) of level Lq from each of vertically adjacent (e.g., directly above; or above, parallel to, and having at least part of the width of the two transmission lines overlapping along length L 71 ) horizontal data signal receive transmission line (e.g., data signal RX line) of level Ln of the package device 1150 that is above level Lo. Lines 1164 of level Lo also separate each horizontal data signal RX line 738 of level Ln from each of vertically adjacent (e.g., directly below; or below, parallel to, and having at least part of the width of the two transmission lines overlapping along length L 71 ) horizontal data signal transmit TX transmission line 748 of level Lq below level Ln.

In some cases, package device 1150 has package device ground isolation lines 1164 of level Lo horizontally separating each of package device horizontal data signal transmit transmission lines 748 (e.g., data signal TX 748 ) of level Lo from each of horizontally adjacent (e.g., directly beside such as to the left and right; beside, parallel to, and having at least part of the height of the two transmission lines overlapping along height H 73 ) horizontal data signal transmit transmission lines 748 (e.g., data signal TX 748 ) of level Lo of package device 1150 .

In some cases, package device 1150 has package device ground isolation lines 1166 of level Lq vertically separating each of package device horizontal data signal transmit transmission lines 748 (e.g., data signal TX 748 ) of level Lo from each of vertically adjacent (e.g., directly below; or below, parallel to, and having at least part of the width of the two transmission lines overlapping along length L 71 ) horizontal data signal transmission line (e.g., data signal TX or RX line) of a level of the package device 1150 that is below level Lq. Lines 1166 of level Lq also separate each horizontal data signal (e.g., TX or RX) line of a level of device 1150 that is below level Lq from each of vertically adjacent (e.g., directly above; or above and having at least part of the width of the two transmission lines overlapping along length L 71 ) horizontal data signal transmit TX transmission line 748 of level Lo above level Lq.

In some cases, package device 1150 has package device ground isolation lines 1166 of level Lq horizontally separating each of package device horizontal data signal transmit transmission lines 748 (e.g., data signal TX 748 ) of level Lq from each of horizontally adjacent (e.g., directly beside such as to the left and right; beside, parallel to, and having at least part of the height of the two transmission lines overlapping along height H 73 ) horizontal data signal transmit transmission lines 748 (e.g., data signal TX 748 ) of level Lq of package device 1150 .

FIG. 12A is an exploded schematic cross-sectional length view of a ground isolated horizontal data signal transmission line package device of FIG. 11 showing ground isolation “coaxial” lines separating horizontal data signal receive and transmit lines. FIG. 12A shows an exploded schematic cross-sectional length view of ground isolation “coaxial” line separated data signal package device 1150 , such as a “package device” representing any of patch 1104 (e.g., a view through perspective A-A′), interposer 1106 (e.g., a view through perspective B-B′) or package 1110 (e.g., a view through perspective C-C′ or D-D″). Package device 1150 is shown having interconnect level Lm formed over or onto (e.g., touching) Level Ln which is formed over or onto Level Lo which is formed over or onto (e.g., touching) Level Lq. Each level may have an upper layer of non-conductive (e.g., dielectric) material; a middle layer having conductor material (e.g., pure conductor or metal) data signal lines (e.g., traces) that are coaxially surrounded by ground isolation lines (e.g., conductor material or metal signal traces) that are routed through the package device, parallel to the data signal lines. The isolation lines may surround (e.g., vertically and horizontally separate) vertically and horizontally adjacent horizontal data signal receive (RX) and/or transmit (TX) signal lines of the package device levels (e.g., interconnect levels).

More specifically, FIG. 12A shows package device 1150 having Level Lm with upper layer 1210 formed over or onto (e.g., touching) middle layer 1212 which is formed over or onto upper layer 1220 of level Ln.

Upper layer 1210 of level Lm may include (e.g., along with other materials that are beyond the edge of width W 73 ) or be (e.g., within width W 73 ) package device non-conductive material plane 703 a separating layer 1212 of level Lm from a level or layer above layer 1210 . Layer 1210 (e.g., plane 703 a ) may be formed onto (e.g., touching) or over lower layer 1212 of level Lm. Layer 1210 has height H 74 and width W 73 . In some cases, height H 74 is between 10 and 30 micrometers (um). In some cases, it is between 18 and 21 micrometers. It can be appreciated that height H 74 may be an appropriate height of a dielectric material layer between the signal lines and vertically adjacent grounding isolation lines within a package device, that is less than or greater than those mentioned above.

Now, FIG. 12A shows lower layer 1212 of level Lm that includes (e.g., along with other materials that are beyond the edge of width W 73 ) or is (e.g., within width W 73 ) package device conductor material (e.g., pure conductor or metal) horizontal data signal receive transmission lines 738 (e.g., a first type of data signal lines or traces, such as RX data signal lines) disposed between (1) horizontally adjacent non-conductive (e.g., dielectric) material portions 703 b that are between (2) horizontally adjacent ground isolation lines 1160 (e.g., traces) of conductor material (e.g., pure conductor or metal) disposed distal to each of lines 738 . Layer 1212 separates upper layer 1210 from upper layer 1220 of level Ln. Layer 1212 (e.g., lines 738 , portions 703 b , and lines 1160 ) may be formed onto (e.g., touching) or over upper layer 1220 of level Ln. Layer 1212 has height H 73 and width W 73 .

Horizontal data signal receive transmission lines 738 are shown having height H 73 and width W 71 (a width between horizontally adjacent portions 703 b ). Non-conductive material portions 703 b are shown having height H 73 and width W 75 (a width between horizontally adjacent lines 738 ). Horizontal ground isolation lines 1160 are shown having height H 73 and width W 74 (a width between horizontally adjacent portions 703 b ).

In some cases, width W 75 may be between 5 and 50 um. In some cases, width W 75 may be between 10 and 40 um. In some cases, width W 75 may be between 20 and 35 um. It can be appreciated that width W 72 may be an appropriate width of a non-conductive material between a horizontally adjacent data signal receive or transmit line and a horizontal ground isolation line within a package device, that is less than or greater than those mentioned above. In some cases, the size of width of the manufacturing or processing pitch between same edges (or centers of width W 71 ) of horizontally adjacent data signal lines of device 1150 (and device 1550 ) is pitch PW 2 . PW 2 may be equal to the sum of widths W 71 +2×W 5 +W 74 .

It can be appreciated that in some cases, height H 73 may be an appropriate height of a ground isolation line within a package device, that is less than or greater than those mentioned above. In some cases, height H 73 is the same as height H 71 .

In some cases, width W 74 is between 30 and 235 um. In some cases, width W 74 is between 50 and 150 micrometers (um). In some cases, it is between 80 and 135 micrometers. It can be appreciated that width W 74 may be an appropriate width of a ground isolation line within a package device, that is less than or greater than those mentioned above.

Lines 1160 may be directly physically connected to (e.g., formed in contact with), electrically coupled to, or directly attached to (e.g., touching) ground contacts or via contacts in the same layer 1212 or level Lm as lines 1160 . In some cases, lines 1160 are or include ground signals from patch 1104 , interposer 1106 , package 1110 , or another device attached to thereto. In some cases, a ground signal transmitted (or existing) on ground lines 1160 originates at or is provided by patch 1104 , interposer 1106 or package 1110 . In some cases, the ground signal may be generated by ground circuits, transistors or other components of or attached (e.g., such as from a motherboard or power supply electrically connected) to patch 1104 , interposer 1106 or package 1110 . In some cases this ground signal is a zero voltage direct current (DC) grounding signal (e.g., GND). In some cases the ground signal has a voltage of between 0.0 and 0.2 volts. In some cases it is a different but grounding voltage level for providing electrical ground signals through (or within) a package device or IC chip.

Layer 1212 may be formed onto (e.g., touching) or over layer 1220 of level Ln. Layer 1220 has height H 74 and width W 73 (e.g., as noted above for layer 1210 ).

Level Ln is shown having upper layer 1220 formed over or onto (e.g., touching) lower layer 1222 which is formed over or onto upper layer 1230 of level Lo.

Level Ln may be similar to level Lm except that is has ground isolation lines 1162 instead of lines 1160 ; and layer 1222 is horizontally offset (e.g., moved) along width W 73 from (e.g., with respect to) layer 1212 by a width equal to (½×W 4 plus W 75 plus ½×W 2 ) or equal to a width that causes each of lines 1162 of layer 1222 to be centered directly under each of lines 738 of layer 1212 .

Lines 1162 may be directly physically connected to (e.g., formed in contact with), electrically coupled to, or directly attached to (e.g., touching) ground contacts or via contacts in the same layer 1222 or level Ln as lines 1162 . In some cases the ground lines 1162 are or include ground signals from patch 1104 , interposer 1106 , package 1110 , or another device attached to thereto, as described for lines 1160 . In some cases this ground signal is a zero voltage direct current (DC) grounding signal (e.g., GND) or has a voltage, as described for lines 1160 .

Layer 1222 may be formed onto (e.g., touching) or over layer 1230 of level Lo. Layer 1230 has height H 74 and width W 73 (e.g., as noted above for layer 1210 ).

Level Lo is shown having upper layer 1230 formed over or onto (e.g., touching) lower layer 1232 which is formed over or onto upper layer 1240 of level Lq.

Level Lo may be similar to level Lm except that is has ground isolation lines 1164 instead of lines 1160 ; and has data signal transmit TX lines 748 instead of RX lines 738 . Layer 1232 is horizontally offset (e.g., moved) along width W 73 from (e.g., with respect to) layer 1222 by a width equal to (½×W 4 plus W 73 plus ½×W 2 ) or equal to a width that causes each of lines 1164 of layer 1232 to be centered directly under each of lines 738 of layer 1222 .

Lines 1164 may be directly physically connected to (e.g., formed in contact with), electrically coupled to, or directly attached to (e.g., touching) ground contacts or via contacts in the same layer 1232 or level Lo as lines 1164 . In some cases the ground lines 1164 are or include ground signals from patch 1104 , interposer 1106 , package 1110 , or another device attached to thereto, as described for lines 1160 . In some cases this ground signal is a zero voltage direct current (DC) grounding signal (e.g., GND) or has a voltage, as described for lines 1160 .

Layer 1232 may be formed onto (e.g., touching) or over layer 1240 of level Lq. Layer 1240 has height H 74 and width W 73 (e.g., as noted above for layer 1210 ).

Level Lq is shown having upper layer 1240 formed over or onto (e.g., touching) lower layer 1242 which may be formed over or onto an upper layer of a level below level Lq.

Level Lq may be similar to level Ln except that is has ground isolation lines 1166 instead of lines 1160 ; and has data signal transmit TX lines 748 instead of RX lines 738 . Layer 1242 is horizontally offset (e.g., moved) along width W 73 from (e.g., with respect to) layer 1232 by a width equal to (½×W 4 plus W 73 plus ½×W 2 ) or equal to a width that causes each of lines 1166 of layer 1242 to be centered directly under each of lines 748 of layer 1232 .

Lines 1166 may be directly physically connected to (e.g., formed in contact with), electrically coupled to, or directly attached to (e.g., touching) ground contacts or via contacts in the same layer 1242 or level Lq as lines 1166 . In some cases the ground lines 1166 are or include ground signals from patch 1104 , interposer 1106 , package 1110 , or another device attached to thereto, as described for lines 1160 . In some cases this ground signal is a zero voltage direct current (DC) grounding signal (e.g., GND) or has a voltage, as described for lines 1160 .

FIG. 12B is an exploded schematic cross-sectional side view of a ground isolated horizontal data signal transmission line package device of FIGS. 11 and 12A showing ground isolation “coaxial” lines separating horizontal data signal receive and transmit lines. FIG. 12B shows an exploded schematic cross-sectional side view of ground isolation “coaxial” line separated data signal package device 1150 of FIGS. 11 and 12A such as a “package device” representing any of patch 1104 (e.g., along length L 71 ), interposer 1106 (e.g., along length L 72 ) or package 1110 (e.g., along length L 73 and/or L 74 ). Package device 1150 is shown having interconnect levels Lm, Ln, Lo and Lq (e.g., see FIG. 12A ).

More specifically, FIG. 12B shows package device 1150 having levels Lm-Lq and layers 1210 - 1242 along length L 7 p . Length L 7 p may represent any of lengths L 71 , L 72 , L 73 or L 74 . In some cases, levels Lm-Lq and layers 1210 - 1242 in FIG. 12B may include (e.g., along with other materials that are beyond the edge of length L 7 p ) or are (e.g., within length L 7 p ) the same as in the descriptions above for levels Lm-Lq and layers 1210 - 1242 in FIGS. 5 and 6A , respectively.

FIG. 12B shows layer 1212 that may include (e.g., along with other materials that are beyond the edge of length L 7 p ) or be (e.g., within length L 7 p ) lines 738 , lines 1160 and portions 703 b . For example, layer 1212 is shown having “ 738 / 1160 / 703 b ” which may represent lines 738 , lines 1160 , and/or portions 703 b extending along length L 7 p . FIG. 12B shows layer 1222 that may include (e.g., along with other materials that are beyond the edge of length L 7 p ) or be (e.g., within length L 7 p ) lines 738 , lines 1162 and portions 703 b . FIG. 12B shows layer 1232 that may include (e.g., along with other materials that are beyond the edge of length L 7 p ) or be (e.g., within length L 7 p ) lines 748 , lines 1164 and portions 703 b . FIG. 12B shows layer 1242 that may include (e.g., along with other materials that are beyond the edge of length L 7 p ) or be (e.g., within length L 7 p ) lines 748 , lines 1166 and portions 703 b . In some cases, ground isolation lines 1160 , 1162 , 1164 or 1166 are each electronically coupled to (e.g., touching, formed with, or directly attached to) ground contacts of device 1150 , such as ground contacts disposed in the same layer as each ground plane, respectively.

The embodiments of a ground isolated horizontal data signal transmission line package device 1150 may be described as a ground isolation “coaxial” line separated data signal package device 1150 . The ground isolation lines 1160 , 1162 , 1164 or 1166 horizontally, vertically and coaxially surrounding the horizontal data signal transmission lines 738 RX or 748 TX in each of levels Lm-Lq may (1) reduce crosstalk between vertically adjacent ones of the horizontal data signal transmission lines 738 RX or 748 TX of different levels of levels Lm-Lq; and (2) increase electronic isolation of horizontally adjacent ones of the horizontal data signal transmission lines 738 RX or 748 TX in each of same level of levels Lm-Lq.

More specifically, FIGS. 5-6B show that each of levels Lm-Lq may have an upper layer of non-conductive (e.g., dielectric) material 703 a ; and a lower layer having conductor material (e.g., pure conductor or metal) data signal lines (e.g., traces) 738 RX or 748 TX between (1) horizontally adjacent non-conductive (e.g., dielectric) material portions 703 b that are between (2) horizontally adjacent ground isolation lines 1160 , 1162 , 1164 or 1166 (e.g., traces) of conductor material (e.g., pure conductor or metal). One non-conductive material portion 703 b may be horizontally adjacent, to the outside of each data signal 738 RX or 748 TX line (e.g., neighboring, bordering, adjoining, or flanking each data signal line); and one ground isolation line 1160 , 1162 , 1164 or 1166 may be horizontally adjacent, to the outside of each of the non-conductive material portions 703 b (e.g., neighboring, bordering, adjoining, or flanking the side of each non-conductive material portion at is disposed away from or distal to the data signal line) in each of levels Lm-Lq. In other words, two ground isolation lines (e.g., two of each of lines 1160 , 1162 , 1164 or 1166 ) horizontally surround (e.g., are horizontally to the left and right of) two non-conductive material portions 703 b that horizontally surround (e.g., are horizontally to the left and right of) each data signal line 738 RX or 748 TX in each of levels Lm-Lq. In some cases, the two ground isolation lines (e.g., two of each of lines 1160 , 1162 , 1164 or 1166 ) are described as horizontally surrounding (e.g., are horizontally to the left and right of) each data signal line 738 RX or 748 TX in each of levels Lm-Lq.

In some cases, each date signal RX line of level Ln (e.g., layer 1222 ) can be said to be horizontally surrounded by two ground isolation lines 1162 of level Ln (e.g., layer 1222 ). Also, in some cases, each date signal TX line of level Lo (e.g., layer 1232 ) can be said to be horizontally surrounded by two ground isolation lines 1164 of level Lo (e.g., layer 1232 ).

In some cases, ground lines of package device 1150 (e.g., lines 1160 , 1162 , 1164 and 1166 ) may reduce (e.g., mitigate or decrease) (e.g., by a factor or 2, 3, 5 or 10 times) “data signal transmission line” crosstalk (and optionally may increase electronic isolation by the same factor) between one of the horizontal data signal transmission lines of one level (e.g., an “agressor” of level Lm, Ln, Lo or Lq) and a horizontally adjacent data same type (e.g., RX or TX) signal transmission line of the same level (e.g., that one level Lm, Ln, Lo or Lq).

For example, in some cases, ground isolation lines 1160 of package device 1150 may decrease (e.g., by a factor or 2, 3, 5 or 10 times) “data signal transmission line” horizontal electronic crosstalk (and optionally may increase electronic isolation by the same factor) caused or produced at one RX data signal transmission line 738 of level Lm (e.g., of layer 1212 ) by two “agressor” horizontal RX data signal transmission lines 738 of the same level Lm (e.g., of layer 1212 ) that are disposed horizontally adjacent to (e.g., to the left and right of) the one RX data signal line. Such a decrease in crosstalk may represent or mitigate this crosstalk to a minimum acceptable crosstalk value between the horizontally adjacent RX or TX data signal lines. This may occur for each of the horizontal RX data signal lines in level Lm. It can be appreciated that ground isolation lines 1162 can cause the same horizontal electronic crosstalk decrease (and optionally isolation increase) to occur for each of the RX data signal lines in level Ln. In some cases, ground isolation lines 1164 can cause the same horizontal electronic crosstalk decrease (and optionally isolation increase) to occur for each of the TX data signal lines in level Lo. In some cases, ground isolation lines 1166 can cause the same horizontal electronic crosstalk decrease (and optionally isolation increase) to occur for each of the TX data signal lines in level Lq.

Each level of levels Lo-Lq of FIGS. 5-6B may also have staggered horizontal (e.g., lateral) spacing of its lower layer conductor material data signal lines 738 RX or 748 TX as compared to ground isolation lines 1160 , 1162 , 1164 or 1166 of a vertically adjacent level above it so that its lower layer conductor material data signal lines 738 RX or 748 TX are disposed directly below ground isolation lines 1160 , 1162 , 1164 or 1166 of the vertically adjacent level above it. Here, the vertically adjacent non-conductive (e.g., dielectric) material layer 703 a of the upper layer of each level Lo-Lq may separate (e.g., be disposed vertically between) the lower layer conductor material data signal lines 738 RX or 748 TX of the level from the ground isolation lines 1160 , 1162 , 1164 or 1166 of the vertically adjacent level above it. Similarly, each level Lo-Lq may also have staggered horizontal spacing of its lower layer conductor material data signal lines 738 RX or 748 TX as compared to ground isolation lines 1160 , 1162 , 1164 or 1166 of a vertically adjacent level below it, so that its lower layer conductor material data signal lines 738 RX or 748 TX are disposed directly above ground isolation lines 1160 , 1162 , 1164 or 1166 of the vertically adjacent level below it. Here, the vertically adjacent non-conductive (e.g., dielectric) material layer 703 a of the vertically adjacent level below it may separate (e.g., be disposed vertically between) the lower layer conductor material data signal lines 738 RX or 748 TX of the level from the ground isolation lines 1160 , 1162 , 1164 or 1166 of the vertically adjacent level below it. In other words, two ground isolation lines (e.g., a pair of 1160 and 1164 ; or 1162 and 1166 ) vertically surround (e.g., are vertically to the top and bottom of) two non-conductive material layers 703 a that vertically surround (e.g., are vertically to the top and bottom of) each data signal line RX or 748 TX. In some cases, the two ground isolation lines (e.g., a pair of 1160 and 1164 ; or 1162 and 1166 ) are described as vertically surrounding (e.g., are vertically above and below) each data signal line 738 RX or 748 TX in each of levels Lm-Lq.

In some cases, each date signal RX line of level Ln (e.g., layer 1222 ) can be said to be vertically surrounded by ground isolation line 1160 of level Lm (e.g., layer 1212 ) and line 1164 of level Lo (e.g., layer 1232 ). Also, in some cases, each date signal TX line of level Lo (e.g., layer 1232 ) can be said to be vertically surrounded by ground isolation line 1162 of level Ln (e.g., layer 1222 ) and line 1166 of level Lq (e.g., layer 1242 ).

In some cases, ground lines of package device 1150 (e.g., lines 1160 , 1162 , 1164 and 1166 ) may reduce (e.g., mitigate or decrease) (e.g., by a factor or 2, 3, 5 or 10 times) “data signal transmission line” crosstalk (and optionally may increase isolation) between one of the horizontal data signal transmission lines of one level (e.g., an “agressor” of level Lm, Ln, Lo or Lq) and a vertically adjacent data signal transmission line of a level two levels above or below the one transmission line (e.g., two levels above or below the agressor level Lm, Ln, Lo or Lq).

For example, in some cases, each ground isolation line 1162 of package device 1150 may reduce (e.g., by a factor or 2, 3, 5 or 10 times) “data signal transmission line” vertical crosstalk (and optionally may increase isolation) produced or created by an “agressor” horizontal RX data signal transmission line 738 of level Lm (e.g., of layer 1212 ) from reaching a vertically adjacent TX data signal transmission line of level Lo (e.g., of layer 1232 ) that is disposed two levels below the “agressor” RX line of level Lm (e.g., of layer 1212 ), such as due to line 1162 being disposed vertially between the signal transmisstion lines of levels Lm and Lo. This may occur for each of the horizontal TX data signal lines in level Lo, such as where each of ground lines 1162 reduces horizontal crosstalk (and optionally may increase isolation) produced or created by each “agressor” horizontal RX data signal transmission line 738 of level Lm from reaching each vertically adjacent TX data signal transmission line of level Lo that is disposed two levels below the “agressor” RX line of level Lm. It is considered that lines 1162 cause the same reduction in vertical crosstalk caused by the TX lines of level Lo from reaching the a vertically adjacent RX lines of level Lm.

Similarly, in some cases, each ground isolation line 1164 of package device 1150 may reduce (e.g., by a factor or 2, 3, 5 or 10 times) “data signal transmission line” vertical crosstalk (and optionally may increase isolation) produced or created by an “agressor” horizontal TX data signal transmission line 748 of level Lq (e.g., of layer 1242 ) from reaching a vertically adjacent RX data signal transmission line of level Ln (e.g., of layer 1222 ) that is disposed two levels above the “agressor” TX line of level Lq (e.g., of layer 1242 ), such as due to line 1164 being disposed vertically between the signal transmission lines of levels Lq and Ln. This may occur for each of the horizontal RX data signal lines in level Ln, such as where each of ground lines 1164 reduces horizontal crosstalk (and optionally may increase isolation) produced or created by each “agressor” horizontal TX data signal transmission line 748 of level Lq from reaching each vertically adjacent RX data signal transmission line of level Ln that is disposed two levels above the “agressor” TX line of level Lq. It is considered that lines 1164 cause the same reduction in vertical crosstalk caused by the RX lines of level Ln from reaching the a vertically adjacent TX lines of level Lq.

It can be appreciated that ground isolation lines 1160 can cause the same vertical crosstalk reduction (and optionally isolation increase) to occur for each of the RX data signal lines in level Ln as compared to a level 2 levels above level Ln. In some cases, ground isolation lines 1166 can cause the same vertical crosstalk reduction (and optionally isolation increase) to occur for each of the TX data signal lines in level Lo as compared to a level 2 levels below level Lo.

For example, by being lines of conductive material electrically grounded (e.g., having a ground signal), each of ground isolation lines 1160 - 1166 may absorb, or shield electromagnetic crosstalk signals produced by (or increasing electronic isolation from) one data signal transmission line of the vertically adjacent levels two levels above (or below) the lines, from reaching each of the data signal transmission line of the one level, due to the amount of grounded conductive material, and location of the conductive grounded material between the two levels. This may include reducing electrical crosstalk caused by undesired capacitive, inductive, or conductive coupling of a first data signal type (e.g., RX or TX) received or transmitted through one of the horizontal data signal transmission lines of the vertically adjacent levels (e.g., an “agressor”) from reaching (e.g., effecting or being mirrored in) a second data signal type (e.g., TX or RX; the opposite of the first type RX or TX, respectively) received or transmitted through the horizontal data signal transmission lines of the one level that the ground lines shields.

The combination of the two ground isolation lines (e.g., two of each of lines 1160 , 1162 , 1164 or 1166 ) horizontally surrounding each data signal line 738 RX or 748 TX in each of levels Lm-Lq; and the two ground isolation lines (e.g., a pair of 1160 and 1164 ; or 1162 and 1166 ) vertically surrounding each data signal line 738 RX or 748 TX in each of levels Lm-Lq may be described as four ground isolation lines “coaxially” surrounding each data signal line 738 RX or 748 TX in each of levels Lm-Lq. In some cases, each date signal RX line of level Ln (e.g., layer 1222 ) can be said to be coaxially surrounded by being (1) horizontally surrounded by two ground isolation lines 1162 of level Ln (e.g., layer 1222 ), and (2) vertically surrounded by one of ground isolation lines 1160 of level Lm (e.g., layer 1212 ) and one of lines 1164 of level Lo (e.g., layer 1232 ). Also, in some cases, each date signal TX line of level Lo (e.g., layer 1232 ) can be said to be coaxially surrounded by being (1) horizontally surrounded by two ground isolation lines 1164 of level Lo (e.g., layer 1232 ), and (2) vertically surrounded by one of ground isolation lines 1162 of level Ln (e.g., layer 1222 ) and one of lines 1166 of level Lq (e.g., layer 1242 ).

In some cases, the four ground isolation lines “coaxially” surrounding each horizontal data signal line 738 RX or 748 TX in each of levels Lm-Lq provides or causes (1) the two ground isolation lines (e.g., two of each of lines 1160 , 1162 , 1164 or 1166 ) horizontally surrounding each data signal line 738 RX or 748 TX in each of levels Lm-Lq to decrease (e.g., by a factor or 2, 3, 5 or 10 times) “data signal transmission line” electronic crosstalk (and optionally may increase electronic isolation) between each of the horizontal data signal transmission lines of one level (e.g., level Lm, Ln, Lo or Lq) and a horizontally adjacent data same type (e.g., RX or TX) signal transmission line of the same level (e.g., that one level Lm, Ln, Lo or Lq); and (2) the two ground isolation lines (e.g., a pair of 1160 and 1164 ; or 1162 and 1166 ) vertically surrounding each data signal line 738 RX or 748 TX in each of levels Lm-Lq to decrease (e.g., by a factor or 2, 3, 5 or 10 times) “data signal transmission line” crosstalk (and optionally may increase isolation) between one of the horizontal data signal transmission lines of one level (e.g., an “agressor” of level Lm, Ln, Lo or Lq) and a vertically adjacent data signal transmission line of a level two levels above or below the one transmission line (e.g., two levels above or below the agressor level Lm, Ln, Lo or Lq). In some embodiments, ground isolation lines 1160 - 1166 reduce electrical crosstalk and increase electrical isolation as noted above without re-ordering any horizontal order or sequence of the horizontal data signal transmission lines in a layer or level.

It is noted that there are four isolation lines surrounding each date signal RX line of level Ln (e.g., layer 1222 ) in a “diamond” shape but no diagonally adjacent ground isolation line for that RX line. This may be due to diagonal spacing (e.g., by a predetermined, tuning determined, selected or otherwise designed distance) the RX and TX lines of the different levels sufficiently so that crosstalk is reduced enough (and optionally electronic isolation is increased enough) for the data signal lines to operate at the speeds and other characteristics as noted herein.

FIG. 13 shows a plot of eye height (EH) curves and eye width (EW) curves of an eye diagram produced by testing one of horizontal data signal transmission signal lines for a range of horizontal data signal transmission line widthand ground line width, such as where spacing is constant between horizontally adjacent signal lines and ground lines. In some cases, the horizontal signal lines 738 and 748 ; and the ground lines (e.g., 1160 , 1162 , 1164 and 1166 ) of device 1150 are impedance tuned (e.g., see FIG. 13 ) to minimize impedance discontinuity and crosstalk between vertically adjacent and horizontally adjacent ones of signal lines 738 or 748 (e.g., a channel) of device 1150 . This may include performing such tuning to determine or identify: (1) a selected target width W 71 (and optionally height H 73 ) of one of signal lines 738 or 748 (e.g., given other set or known heights and widths such as noted below); and (2) a selected target width W 74 (and optionally height H 73 ) of one of the ground lines (e.g., 1160 , 1162 , 1164 or 1166 ) (e.g., given other set or known heights and widths such as noted below) that provides a the best channel performance as showed as the lowest amplitude cross point of eye height (EH) or eye width (EW) curves (e.g., see FIG. 13 ) of an eye diagram (e.g., see FIG. 9B ) produced by testing one of signal lines 738 or 748 . The EH and EW curves (e.g., curves 1310 - 711 and 1315 - 1316 ) may be output signal measure (or computer modeled) at a location of the data signal line 738 or 748 when (e.g., as a result of running) one or more input test data signals are sent through length L 7 p of the data signal line such as described for FIGS. 3A-B to determine or identify isolated horizontal data signal transmission line widths W 71 and ground line width W 74 (optionally, and spacing W 75 ) that are single line impedance tuned (e.g., see FIG. 13 ) in the routing segment of device 1150 along the channel of signal lines 738 and 748 along length L 7 p.

Impedance tuning of the signal line may be based on or include as factors: horizontal data signal transmission line width W 71 , height H 73 , length L 7 p ; horizontal ground isolation line width W 74 , height H 73 , length L 7 p ; width W 75 between the isolation lines and horizontally adjacent horizontal data signal transmission lines of device 1150 ; and height H 74 between a signal line and a vertically adjacent grounding line of device 1150 . In some cases, once the length L 7 p , width W 75 , height H 74 and height H 73 are known (e.g., predetermined or previously selected based on a specific design of a package device 1150 ), then tuning is performed (e.g., computer simulation, actual “beta” device testing, or other laboratory testing) to determine or identify a ranges of width W 71 and W 74 that provide the best channel performance as showed as the lowest amplitude cross point of eye height (EH) or eye width (EW) curves of an eye diagram produced by testing one of signal lines 738 or 748 .

For example, FIG. 13 shows a plot of eye height (EH) curves 1310 and 1311 ; and eye width (EW) curves 1315 and 1316 of an eye diagram (e.g., see FIG. 9B ) produced by testing one of horizontal data signal transmission signal lines 738 or 748 for a range of horizontal data signal transmission line width W 71 and ground line width W 74 , such as where spacing W 72 is constant between horizontally adjacent signal lines (e.g., lines 738 or 748 ) and ground lines (e.g., lines 1160 , 1162 , 1164 or 1166 ). The testing may include measuring or modeling an output signal in response to an input signals such as step up (e.g., ) and down (e.g., ) signals as noted above for FIG. 9A . EH curve 1310 may be the EH curve for a first design or use of device 1150 that is independent of (e.g., not based on or does not consider) the above noted factors (e.g., horizontal data signal transmission line width W 71 , ground line width W 74 , height H 73 , length L 7 p ; width W 75 between the signal line and a horizontally adjacent ground lines of device 750 ; and height H 74 between the signal line and a vertically adjacent grounding line of device 750 ). EH curve 1311 may be the EH curve for a second, different design or use of device 1150 that is independent of the above noted factors. EW curve 1315 may be the EW curve for the first design or use of device 750 that is independent of the above noted factors. EW curve 1316 may be the EW curve for the second, different design or use of device 1150 that is independent of the above noted factors.

In some cases, such a design or use may include where the different curves represent different manufacture variation combinations, such as where a low impedance package (e.g., package 1110 ) is connected to high impedance interposer (e.g., interposer 1106 ). In some cases, such a design or use may include where the different curves represent different corner combinations, or possible component variation combinations. In some cases, such a design or use may include where the different curves represent different designs or usees to tune the impedance to maximize the channel performance. In some cases, FIG. 7A shows EH and EW curves from various channels combining possible package and interposer manufacturing corners, (max/typical/min impedance corners from manufacturing variations). In some cases, for example, max Z patch+min Z interposer+max Z package, where Z denotes impedance. In some cases, the common or intersection area below the EH or EW curvers shows the channel EH/EW solution space. In some cases, the optimized impedance value is tied to the the cross point of EH or EW curves which provides the max EH/EW enveloping all the possible channel manufacture variations.

As described for EH curves 910 - 911 of FIGS. 3A-B , EH curves 1310 - 1311 may be examples of an eye-height for different designs, and different signal line width W 71 and ground line width W 74 (e.g., where spacing W 72 is constant) for device 1150 . Also, as described for EW curves 315 - 316 of FIGS. 3A-B , EW curves 1315 - 1316 may be examples of an eye-width for the different designs, and the different signal line width W 71 and ground line width W 74 (e.g., where spacing W 72 is constant) for device 1150 .

In some cases, curves 1310 - 1311 and 1315 - 1316 are for a selected (e.g., predetermined, desired, constant or certain) length L 7 p of the horizontal data signal transmission line (e.g., RX line 738 or TX line 748 ) and ground isolation lines of package device 1150 . In some cases, curves 1310 - 1311 and 1315 - 1316 are also for a selected signal line and ground line height H 73 and spacing H 74 between the signal line and a vertically adjacent ground line.

In some other cases, tuning includes knowing length L 7 p , width W 75 and height H 74 , then tuning to determine or identify a range of width W 71 , width W 74 and height H 73 that provides a predetermined or target impedance for the line.

More specifically, FIG. 13 shows graph 1300 plotting the amplitude of tuning curves 1310 - 1311 and 1315 - 1316 along vertical Y-axis 720 for different pairs of width W 71 of a signal line (e.g., RX line 738 or TX line 748 ) and width W 74 of ground lines (e.g., where spacing W 75 is constant value or distance between horizontally adjacent one of the signal lines (e.g., RX or TX lines 738 or 748 ) and ground lines (e.g., lines 1160 , 1162 , 1164 or 1166 ) along horizontal X-axis 1330 . Although FIG. 13 shows the amplitude of curves 1310 - 1311 and 1315 - 1316 on the same graph 1300 , it can be appreciated that they may be on different graphs having different amplitude scaled Y-axis but the same X-axis 1330 (e.g., the curves are all shown vertically scaled on graph 1300 (e.g., moved up or down axis 720 ) to compare the cross points for the curves). Curves 1310 - 1311 and 1315 - 1316 may be output signal measure (or computer modeled) at a location of the data signal line when (e.g., as a result of running) the one or more test data signals are sent through length L 7 p of the data signal line (e.g., RX line 738 or TX line 748 ).

Graph 1300 shows cross point 1312 of EH curves 1310 and 1311 . I can be appreciated that curves 1310 and 1311 represent more than two curves, but that those curves have a lowest Y-axis cross point at point 1312 . Graph 1300 shows cross point 1317 of EW curves 1315 and 1316 . I can be appreciated that curves 1315 and 1316 represent more than two curves, but that those curves have a lowest Y-axis cross point at point 1317 .

FIG. 13 shows EW and EH curve amplitudes along vertical axis 720 having values W′, X′, Y′ and Z′, such as representing different amplitudes for curves 1310 - 1311 or 1315 - 1316 (e.g., curves 1315 - 1316 or 1310 - 1311 may be scaled, respectively, to fit onto the same graph or plot). In some cases, for curves 1310 - 1311 values W′, X′, Y′ and Z′, represent different linearly increasing EH signal amplitude values (e.g., voltage amplitudes of EH derived from a test signal) such as 0.15, 0.2, 0.25 and 0.3 volts. In some cases, for curves 1315 - 1316 values W′, X′, Y′ and Z′, represent different linearly increasing EW signal time values (e.g., time values of EW derived from a test signal) such as 3.5, 4.0. 4.5 and 5.0 E-11 seconds.

FIG. 13 shows pairs of width W 71 /width W 74 along horizontal axis 1330 having pair values A′/B′, C′/D′, E′/F′, G′/H′, K′/L′, M′/N′ and O′/P′. In some cases, the aggregate (e.g., addition) of each pair of values (e.g., value A′ plus value B′; or value O′ plus value P′, etc.) represents the same sum or a first constant; and that first constant plus two times the spacing width W 75 is a second constant (e.g., such as pitch width PW 2 ). In some cases, the signal line width W 71 and ground line width W 74 vary in an inversely proportional manner to add up to the first constant, such as where if W 71 increases by a value (e.g., W 71 +W′), W 74 decreases by that value (e.g., W 74 -W′), and vice versa. In some cases, the signal line width W 71 and ground line width W 74 may be described as being inversely proportional. In some cases, (1) the second constant is signal line to signal lined pitch width PW 2 ; and (2) the signal line width W 71 and ground line width W 74 vary in an inversely proportional manner so that the addition of W 71 +W 74 +2×W 5 =PW 2 (e.g., the second constant).

In some cases, PW 2 is between 100 and 200 um. In some cases, it is between 720 and 150 um. In some cases it is between 730 and 140 um. In some cases, pair values A′/B′ represent width W 71 between 60 and 80 um, and width W 74 between 55 and 75 um; pair values O′/P′ represent width W 71 between 25 and 45 um, and width W 74 between 90 and 110 um; and the other pairs are at linear intervals between values A′/B′ and values O′/P′. In some cases, pair values A′/B′ represent width W 71 /width W 74 of 70/65 um, pair values C′/D′ represent width W 71 /width W 74 of 65/70 um, pair values E′/F′ represent width W 71 /width W 74 of 60/75 um, pair values G′/H′ represent width W 71 /width W 74 of 55/80 um, pair values represent width W 71 /width W 74 of 50/85 um, pair values K′/L′ represent width W 71 /width W 74 of 45/90 um, pair values M′/N′ represent width W 71 /width W 74 of 40/95 um, and pair values O′/P′ represent width W 71 /width W 74 of 35/100 um.

In some cases, Y-axis 720 represents eye-height or eye-width which are the figures of merit to quantify the channel performance of the tested signal line (e.g., RX line 738 or TX line 748 ); and X-axis 1330 is the combination of signal line width W 71 /width W 74 (with constant spacing W 75 ) at constant pitch (line width W 71 +width W 74 +2×W 5 =constant pitch PW, such as PW 2 ). According to embodiments, the impedance tuning of horizontal signal line 738 or 748 of device 1150 includes (or is) selecting (or “tuning”) single horizontal routing signal line (e.g., TX and RX line) impedance, such as to select (or “tune” the TX and RX lines to or at) the combination of signal line width W 71 /width W 74 to an optimized point to achieve the best channel performance as showed as the lowest cross point of EH or EW curves (e.g., such as shown in FIG. 13 ).

According to embodiments, the impedance tuning of horizontal signal line 738 or 748 of device 1150 includes various possible selections of one or a range of locations on X-Axis 1330 selected based on or as a result of a calculation using EH and EW cross point 1312 and/or point 1317 . It can be appreciated that such tuning may include selecting or identifying one or a range of width W 71 /width W 74 along axis 1330 for one or both of (1) signal lines 738 and ground line pairs 1160 / 1162 , or (2) signal lines 748 and ground line pairs 1164 / 1166 , based on or as a result of a calculation using cross point 1312 and/or point 1317 .

In some cases, such impedance tuning includes or is selecting the lowest amplitude cross point 1312 of eye height (EH) curves 1310 - 712 or of eye width (EW) curves 1315 - 1316 of an eye diagram produced by testing one of signal lines 738 or 748 . Here, for example, as shown in FIG. 13 , X-axis 1330 location I′/J′ which is under point 1312 ; or a location at midpoint between and K′/L′ which is under point 1312 may be chosen for width W 71 and width W 74 for one or both of (1) signal lines 738 and ground line pairs 1160 / 1162 , or (2) signal lines 748 and ground line pairs 1164 / 1166 . In some cases, one of those locations may be used for both of (1) signal lines 738 and ground line pairs 1160 / 1162 , and (2) signal lines 748 and ground line pairs 1164 / 1166 . In some cases, a range of width W 71 and width W 74 around either of those locations (e.g., a W 71 and W 74 tolerance, such as 5 or 10 percent around either location) may be used for both of (1) signal lines 738 and ground line pairs 1160 / 1162 , and (2) signal lines 748 and ground line pairs 1164 / 1166 . In some cases, a range of width W 71 and width W 74 between those locations (e.g., a W 71 and W 74 tolerance within that range or any location within that range) may be used for both of (1) signal lines 738 and ground line pairs 1160 / 1162 , and (2) signal lines 748 and ground line pairs 1164 / 1166 .

According to some embodiments, the impedance tuning includes or is selecting the lowest amplitude cross point 1312 and point 1317 produced by testing one of signal lines 738 or 748 . Here, for example, as shown in FIG. 13 , an X-axis 1330 location between (e.g., midpoint between, and average of, or another statistical calculation between) which is under point 1312 and a midpoint between and K′/L′ which is under point 1312 may be chosen for width W 71 and width W 74 for one or both of (1) signal lines 738 and ground line pairs 1160 / 1162 , or (2) signal lines 748 and ground line pairs 1164 / 1166 . In some cases, the location between may be used for both of (1) signal lines 738 and ground line pairs 1160 / 1162 , and (2) signal lines 748 and ground line pairs 1164 / 1166 . In some cases, a range of width W 71 and width W 74 around the location between (e.g., a W 71 and W 74 tolerance, such as 5 or 10 percent around either location) may be used for both of (1) signal lines 738 and ground line pairs 1160 / 1162 , and (2) signal lines 748 and ground line pairs 1164 / 1166 . It can be appreciated that various other appropriate locations may be selected based on cross points 1312 and 1317 .

It can be appreciated that such tuning as noted above may be for or represent tuning of a single one of, all of a level of, or all of (1) signal lines 738 and ground line pairs 1160 / 1162 , or (2) signal lines 748 and ground line pairs 1164 / 1166 of device 1150 . It can be appreciated that such tuning as noted above may be represent by curves different than the convex curves 1310 - 1311 and 1315 - 1316 shown in FIG. 13 , such as where the selected width W 71 /width W 74 along axis 1330 is selected to be at the highest point of the different curve along the vertical axis 720 .

In some cases, this impedance tuning provides (e.g., by determining or identifying a range of or selected target width W 71 and width W 74 for both of (1) signal lines 738 and ground line pairs 1160 / 1162 , or (2) signal lines 748 and ground line pairs 1164 / 1166 ): (1) the best channel performance for lines 738 and 748 (e.g., having length L 7 p ; width W 71 ; width W 74 , pitch PW 2 between the line and a horizontally adjacent horizontal data signal transmission line of device 1150 ; and height H 74 between the line and a vertically adjacent grounding line of device 1150 ), (2) electrical isolation of horizontal data signal transmission lines (e.g., signal lines 738 and 748 ) that are single line impedance tuned in the routing segment of device 1150 along the channel (e.g., signal lines 738 or 748 along length L 7 p ), and (3) minimized impedance discontinuity and crosstalk between vertically adjacent and horizontally adjacent ones of signal lines 738 or 748 of device 1150 .

In some cases, the tuning above includes separately tuning lines 738 and 748 of interposer 1106 , patch 1104 and package 1110 . In some cases, it includes separately tuning lines 738 and 748 of interposer 1106 , patch 1104 or package 1110 . In some cases, the tuning above includes tuning lines 738 and 748 of interposer 1106 are tuned, but the signal lines of patch 1104 and package 1110 are not. In some cases, the width W 71 and width W 74 of interposer 1106 are determined by tuning as noted above; and the width W 71 and width W 74 of patch 1104 and package 1110 are determined based on other factors, or design parameters that do not include the tuning noted above.

FIG. 14 is a flow chart illustrating a process for forming a ground isolated “coaxial” line separated data signal package, according to embodiments described herein. FIG. 14 shows process 1400 which may be a process for forming embodiments described herein of package 1150 of any of FIGS. 5-7 . It may also be a process for forming certain levels or layers of FIGS. 15-19 as noted further below. In some cases, process 1400 is a process for forming a ground isolated horizontal data signal transmission line package device that has two ground isolation lines are horizontally surrounding each data signal line; and the two ground isolation lines vertically surrounding each data signal line to cause four ground isolation lines to “coaxially” surrounding each data signal line.

Process 1400 begins at optional block 1410 at which a first (e.g., lower) interconnect level Lo of a package device is formed, having a first type (e.g., RX or TX) of package device conductor material horizontal data signal transmission lines disposed between pairs of horizontally adjacent first ground isolation lines 1164 of the first interconnect level Lo. Block 1410 may also include forming first (e.g., lower) level Lo to have package device non-conductive material portions of the first interconnect level Lo disposed (e.g., horizontally adjacent) between each of the first type (e.g., RX or TX) of package device conductor material horizontal data signal receive transmission lines and each of the first ground isolation lines of the first interconnect level Lo.

Block 1410 may also include forming the first (e.g., lower) interconnect level Lo of the package device with a first level package device non-conductive material layer formed on (e.g., touching) or over a layer having the first type (e.g., RX or TX) of package device horizontal data signal lines, the first ground isolation lines, and the non-conductive material portions of the first interconnect level Lo.

In some cases, block 1410 includes forming non-conductive material layer 703 a of the first (e.g., lower) interconnect level Lo (e.g., layer 1230 ) on (e.g., touching) or over a layer (e.g., layer 1232 ) having the first type TX horizontal data signal lines 748 , first ground isolation lines 1164 , and non-conductive material portions 703 b of first interconnect level Lo.

In some cases, block 1410 may only include forming lower layer 1232 of level Lo with first type of data TX signal 748 lines disposed horizontally between dielectric material portions 703 b which are disposed between horizontally adjacent first ground isolation lines 1164 of the first interconnect level Lo; and then forming upper layer 1230 of or having dielectric material onto layer 1232 .

A first example embodiment of block 1410 may include (e.g., prior to forming the upper layer 1230 ), forming a mask (e.g., DFR, not shown) over a top surface of an upper layer 1240 (e.g., of ajinomoto build up film (ABF)), the mask having (1) first openings over layer 1240 in which to form the first type of data TX signal 748 lines of layer 1232 and (2) second openings over layer 1240 in which to form the horizontally adjacent first ground isolation lines 1164 . In some cases, the first openings may be horizontally open to and in communication with different, third openings in the mask over layer 1240 in which data TX signal contacts or data TX signal via contacts will be formed. In some cases, the second openings may be horizontally open to and in communication with fourth openings in the mask over layer 1240 in which ground signal contacts or via contacts will be formed.

Some of these cases may include electroless plating of a seed layer of the conductor material over layer 1240 , prior to forming the masks layer. In this case, block 1410 may then include simultaneously forming conductive material (e.g., plating on the exposed seed layer of the openings) to form the data TX signal 748 lines and isolation lines 1164 of layer 1232 in the first and second openings (and optionally the data TX signal or via contacts in the third openings; and the ground signal contacts or via contacst in the fourth openings of layer 1232 ).

In some of these cases, simultaneously forming the conductive material may include forming that conductive material of all of data TX signal 748 lines and isolation lines 1164 of layer 1232 (and optionally all of the data TX signal or via contacts; and the ground signal contacts or via contacts of layer 1232 ) during the same process, deposition or growth of that conductive material in the first and second (and optionally third and fourth) openings. In some cases, simultaneously forming the conductive material includes electrolytic plating of conductor material in the first and second (and optionally third and fourth) openings (e.g., on the electroless plating of seed layer).

In some cases of these, after simultaneously forming the conductive material, the mask (e.g., DFR) is removed. This removal may also include removing the seed layer from between the openings. Then dielectric material 703 b (e.g., of ajinomoto build up film (ABF)) may be deposited where the mask was removed. In some cases, forming the mask includes forming a blanket layer of mask material and etching the blanket layer to form the first (and optionally second) openings.

Next, at block 1420 a second (e.g., middle) interconnect level Ln of the package device is formed over or onto (e.g., touching) level Lo; level Ln, having a second type (e.g., TX or RX; the opposite of the first type RX or TX, respectively) of package device conductor material horizontal data signal transmission lines disposed between pairs of horizontally adjacent second ground isolation lines of the second interconnect level Ln; where the second type of transmission lines of second level Ln are horizontally offset to be directly above the first ground isolation lines of the first interconnect level Lo. Block 1420 may also include forming second level Ln to have package device non-conductive material portions of the second interconnect level Ln disposed (e.g., horizontally adjacent) between each of the second type (e.g., TX or RX) of package device conductor material horizontal data signal transmission lines and each of the second ground isolation lines of the second interconnect level Ln.

Block 1420 may also include forming the second level Ln of the package device with a second level package device non-conductive material layer formed on (e.g., touching) or over a layer having the second type (e.g., TX or RX) of package device horizontal data signal lines, the second ground isolation lines, and the non-conductive material portions of the second interconnect level Ln.

In some cases, block 1420 includes forming non-conductive material layer 703 a of the second (e.g., middle) interconnect level Ln (e.g., layer 1220 ) on (e.g., touching) or over a layer (e.g., layer 1222 ) having the second type RX horizontal data signal lines 738 , second ground isolation lines 1162 , and non-conductive material portions 703 b of second interconnect level Ln of package device 1150 .

In some cases, block 1420 may only include forming lower layer 1222 of level Ln with second type of data RX signal 738 lines disposed horizontally between dielectric material portions 703 b which are disposed between horizontally adjacent second ground isolation lines 1162 of the second interconnect level Ln; and then forming upper layer 1220 of or having dielectric material onto layer 1222 .

A first example embodiment of block 1420 may include (e.g., prior to forming the upper layer 1220 ), forming a mask (e.g., DFR, not shown) over a top surface of an upper layer 1230 (e.g., of ajinomoto build up film (ABF), the mask having (1) first openings over layer 1230 in which to form the second type of data RX signal 738 lines of layer 1222 and (2) second openings over layer 1230 in which to form the horizontally adjacent second ground isolation lines 1162 . In some cases, the first openings may be horizontally open to and in communication with different, third openings in the mask over layer 1230 in which data RX signal contacts or via contacts will be formed. In some cases, the second openings may be horizontally open to and in communication with fourth openings in the mask over layer 1230 in which ground signal contacts or via contacts will be formed.

Some of these cases may include electroless plating of a seed layer of the conductor material over layer 1230 , prior to forming the masks layer. In this case, block 1420 may then include simultaneously forming conductive material (e.g., plating on the exposed seed layer of the openings) to form the second type of data RX signal 738 and isolation lines 1162 of layer 1222 in the first and second openings (and optionally the data RX signal or via contacts in the third openings; and the ground signal contacts or via contacts in the fourth openings of layer 1222 ).

In some of these cases, simultaneously forming the conductive material may include forming that conductive material of all of second type of data RX signal 738 and isolation lines 1162 of layer 1222 (and optionally all of the data RX signal or via contacts; and the ground signal contacts or via contacts of layer 1222 ) during the same process, deposition or growth of that conductive material in the first and second (and optionally third and fourth) openings. In some cases, simultaneously forming the conductive material includes electrolytic plating of conductor material in the first and second (and optionally third and fourth) openings (e.g., on the electroless plating of seed layer).

In some cases of these, after simultaneously forming the conductive material, the mask (e.g., DFR) is removed. This removal may also include removing the seed layer from between the openings. Then dielectric material 703 b (e.g., of ajinomoto build up film (ABF)) may be deposited where the mask was removed. In some cases, forming the mask includes forming a blanket layer of mask material and etching the blanket layer to form the first (and optionally second) openings.

Next, at block 1430 a third (e.g., upper) interconnect level Lm of the package device is formed over or onto (e.g., touching) level Ln; level Lm having the second type (e.g., TX or RX) of package device conductor material horizontal data signal transmission lines disposed between pairs of horizontally adjacent third ground isolation lines of the third interconnect level Lm; where the second type of transmission lines of third level Lm are horizontally offset to be directly above the second ground isolation lines of the second interconnect level Ln; and where the first, second and third ground isolation lines (e.g., of the lower, middle and upper levels) coaxially surround each of the second type of data signal transmission lines of the second (e.g., middle) level Ln. Block 1430 may also include forming third level Lm to have package device non-conductive material portions of the third interconnect level Lm disposed (e.g., horizontally adjacent) between each of the second type (e.g., TX or RX) of package device conductor material horizontal data signal transmission lines and each of the third ground isolation lines of the third interconnect level Lm.

Block 1430 may also include forming the third level Lm of the package device with a third level package device non-conductive material layer formed on (e.g., touching) or over a layer having the second type (e.g., TX or RX) of package device horizontal data signal lines, the third ground isolation lines, and the non-conductive material portions of the third interconnect level Lm.

In some cases, block 1430 includes forming non-conductive material layer 703 a of the third (e.g., upper) interconnect level Lm (e.g., layer 1210 ) on (e.g., touching) or over a layer (e.g., layer 1212 ) having the second type RX horizontal data signal lines 738 , third ground isolation lines 1160 , and non-conductive material portions 703 b of third interconnect level Lm of package device 1150 .

In some cases, block 1430 may only include forming lower layer 1212 of level Lm with second type of data RX signal 738 lines disposed horizontally between dielectric material portions 703 b which are disposed between horizontally adjacent third ground isolation lines 1160 of the third interconnect level Lm; and then forming upper layer 1210 of or having dielectric material onto layer 1212 .

A first example embodiment of block 1430 may include (e.g., prior to forming the upper layer 1210 ), forming a mask (e.g., DFR, not shown) over a top surface of an upper layer 1220 (e.g., of ajinomoto build up film (ABF), the mask having (1) first openings over layer 1220 in which to form the second type of data RX signal 738 lines of layer 1212 and (2) second openings over layer 1220 in which to form the horizontally adjacent third ground isolation lines 1160 .

In some cases, the first openings may be horizontally open to and in communication with different, third openings in the mask over layer 1220 in which data RX signal contacts or via contacts will be formed. In some cases, the second openings may be horizontally open to and in communication with fourth openings in the mask over layer 1220 in which ground signal contacts or via contacts will be formed.

Some of these cases may include electroless plating of a seed layer of the conductor material over layer 1220 , prior to forming the masks layer. In this case, block 1430 may then include simultaneously forming conductive material (e.g., plating on the exposed seed layer of the openings) to form the second type of data RX signal 738 and isolation lines 1160 of layer 1212 in the first and second openings (and optionally the data RX signal or via contacts in the third openings; and the ground signal contacts or via contacts in the fourth openings of layer 1212 ).

In some of these cases, simultaneously forming the conductive material may include forming that conductive material of all of second type of data RX signal 738 and isolation lines 1160 of layer 1212 (and optionally all of the data RX signal or via contacts; and the ground signal contacts or via contacts of layer 1212 ) during the same process, deposition or growth of that conductive material in the first and second (and optionally third and fourth) openings. In some cases, simultaneously forming the conductive material includes electrolytic plating of conductor material in the first and second (and optionally third and fourth) openings (e.g., on the electroless plating of seed layer).

In some cases of these, after simultaneously forming the conductive material, the mask (e.g., DFR) is removed. This removal may also include removing the seed layer from between the openings. Then dielectric material 703 b (e.g., of ajinomoto build up film (ABF)) may be deposited where the mask was removed. In some cases, forming the mask includes forming a blanket layer of mask material and etching the blanket layer to form the first (and optionally second) openings.

Next, at return arrow 1440 , process 1400 may continue by returning to a second performance of optional block 1410 at which another “first” (e.g., lower) interconnect level of a package device is formed, having a first type (e.g., RX or TX) of package device conductor material horizontal data signal transmission lines. Then, process 1400 may proceed with a second performance of block 1420 , and a second performance of optional block 1430 . Process 1400 may continue this way until a predetermined or sufficient number of levels or return processes are completed to form a desired package device 1150 . In some cases, it may repeat 3 to 10 times. In some cases, block 1410 is repeated once to form a level similar to level Lq but formed on level Lm.

Next, in a first example case of process 1400 , block 1410 may only include forming layer 1232 as described herein; block 1420 may only include forming layer 1222 as described herein; and block 1430 may only include forming layer 1212 as described herein. In a second example case, block 1410 may include forming layers 1230 and 1232 as described herein; block 1420 may include forming layers 1220 and 1222 as described herein; and block 1430 may include forming layers 1210 and 1212 as described herein.

It can be appreciated that although FIGS. 11-14 show and corresponding descriptions describe embodiments for level Lm having RX signal lines, level Ln having RX signal lines, level Lo having TX signal lines, and level Lq having TX signal lines, the figures and descriptions also apply to embodiments where there are only one level of vertically adjacent RX and TX signals (e.g., level Ln is TX and level Lo is RX signals), each level having ground isolation lines and offset as noted herein. In some embodiments, there may be three levels of vertically adjacent RX and TX signals, each level having ground isolation lines and offset as noted herein.

For example, an embodiment of a process similar to process 1400 of FIG. 14 may include not performing block 1430 before proceeding to return 1440 and block 1410 , thus forming first (e.g., lower) interconnect level Lo of a package device having one layer of the first type (e.g., RX or TX) of horizontal data signal transmission lines (e.g., a first type of data signal lines or traces, such as RX or TX data signal lines disposed between package device first isolation lines) of the first interconnect level Lo. Then performing block 1420 to form the second (e.g., middle) interconnect level Ln of a package device having one layers of the second type (e.g., TX or RX; the opposite of the first type RX or TX, respectively) of package device horizontal data signal transmission lines (e.g., a first type of data signal lines or traces, such as TX or RX data signal lines disposed between package device second isolation lines) of the second interconnect level Ln. Then returning to perform block 1410 and block 1420 again.

It can be appreciated that although FIGS. 4-8 show and corresponding descriptions describe embodiments for level Lm having RX signal lines, level Ln having RX signal lines, level Lo having TX signal lines, and level Lq having TX signal lines, the figures and descriptions also apply to embodiments where the order can be reversed such as for embodiments where level Lm has TX signal lines, level Ln has TX signal lines, level Lo has RX signal lines, and level Lq has RX signal lines.

It can be appreciated that although FIGS. 4-8 show and corresponding descriptions describe embodiments for levels having RX signal lines and TX signal lines, the figures and descriptions also apply to embodiments where other types of information, clock, timing, alternating current (AC) or data signals can be on those signal lines.

In some cases, a ground isolated horizontal data signal transmission line package device has (1) ground isolation planes separating horizontal data signal receive and transmit layers or levels (e.g., interconnect levels) (e.g., see device 750 of FIGS. 7-10 ) and (2) ground isolation lines “coaxially” surrounding (e.g., vertically and horizontally separating) vertically and horizontally adjacent horizontal data signal receive (RX) and transmit (TX) signal lines that are routed through the package device (e.g., see device 1150 of FIGS. 11-14 ). The horizontal ground isolation planes located vertically between the horizontal data signal receive and transmit layers or levels (e.g., interconnect levels) may reduce crosstalk between vertically adjacent levels (e.g., between TX signal lines and RX signal lines in levels above and below each other) such as described for device 750 of FIGS. 7-10 . The ground isolation lines horizontally, vertically or coaxially surrounding the horizontal data signal transmission lines may reduce crosstalk between and increase isolation of horizontally and vertically adjacent ones of the horizontal data signal transmission lines such as described for device 1150 of FIGS. 11-14 .

In some cases, the horizontal ground isolation planes combined with the isolation lines, reduce crosstalk between vertically adjacent levels (e.g., between TX signal lines and RX signal lines in levels above and below each other), and decrease crosstalk between the horizontal data signal transmission lines that are horizontally adjacent to each other (e.g., in a single vertical level or layer of the device package). This embodiment of a ground isolated horizontal data signal transmission line package device may be described as a “combined horizontal ground isolation planes and ground isolation coaxial lines separated data signal line package device” (e.g., see device 1550 ).

FIG. 15 is schematic cross-sectional side and length views of a computing system, including combined horizontal ground isolation planes and ground isolation coaxial lines separated data signal line package devices. FIG. 15 shows a schematic cross-sectional side view of computing system 1500 , including ground isolated horizontal data signal transmission line package devices, such as patch 1504 , interposer 1506 and package 1510 . In some cases, system 1500 has CPU chip 702 mounted on patch 1504 , which is mounted on interposer 1506 at first location 707 . It also shows chip 708 mounted on package 1510 at first location 701 ; and chip 709 mounted on chip 1510 at second location 711 . Package 1510 is mounted on interposer 1506 at second location 713 . For example, a bottom surface of chip 702 is mounted on top surface 705 of patch 1504 using solder bumps or bump grid array (BGA) 712 . A bottom surface of patch 1504 is mounted on top surface 705 of interposer 1506 at first location 707 using solder bumps or BGA 714 . Also, a bottom surface of chip 708 is mounted on top surface 703 of package 1510 at first location 701 using solder bumps or BGA 718 . A bottom surface of chip 709 is mounted on surface 703 of package 1510 at location 711 using solder bumps or BGA 719 . A bottom surface of package 1510 is mounted on surface 705 of interposer 1506 at second location 713 using solder bumps or BGA 116 .

In some cases the only difference between system 1500 and 700 is the difference between patch 1504 and 704 ; interposer 1506 and 706 ; and package 1510 and 710 . In some cases the only difference between patch 1504 and 704 ; interposer 1506 and 706 ; and package 1510 and 710 is that patch 1504 , interposer 1506 , and package 1510 are or have combined horizontal ground isolation planes and ground isolation coaxial lines separated data signal line package device 1550 instead of ground isolation plane separated data signal package device 750 . In other words, in some cases the only difference between patch 1504 and 704 ; interposer 1506 and 706 ; and package 1510 and 710 is that horizontal data signal transmission lines 122 , 726 , 730 and 735 are or have ground isolation “coaxial” line separated data signal package device 1550 in place of ground isolation plane separated data signal package device 750 .

FIG. 15 also show vertical data signal transmission lines 720 originating in chip 702 and extending vertically downward through bumps 712 and into vertical levels of patch 1504 , such as downward to levels Lm-Lq of patch 1504 at first horizontal location 121 .

FIG. 15 also shows patch horizontal data signal transmission lines 122 originating at first horizontal location 121 in levels Lm-Lq of patch 1504 and extend horizontally through level Lm-Lq along length L 71 of levels Lm-Lq to second horizontal location 723 in levels Lm-Lq of patch 1504 .

Next, FIG. 15 shows vertical data signal transmission lines 724 originating in patch 1504 and extending vertically downward through bumps 714 and into vertical levels of interposer 1506 , such as downward to levels Lm-Lq of interposer 1506 at first horizontal location 725 .

FIG. 15 also shows interposer horizontal data signal transmission lines 726 originating at first horizontal location 725 in levels Lm-Lq of interposer 1506 and extend horizontally through levels Lm-Lq along length L 72 of levels Lm-Lq to second horizontal location 727 in levels Lm-Lq of interposer 1506 .

Next, FIG. 15 shows vertical data signal transmission lines 128 originating in interposer 1506 , such as originating at levels Lm-Lq at second horizontal location 727 of interposer 1506 and extending vertically upward to levels Lm-Lq of package 1510 at first horizontal location 729 of package 1510 .

FIG. 15 also shows package device horizontal data signal transmission lines 730 originating at first horizontal location 725 in levels Lm-Lq of package 1510 and extend horizontally through levels Lm-Lq along length L 73 of levels Lm-Lq to second horizontal location 731 in levels Lm-Lq of package 1510 .

Next, FIG. 15 shows vertical data signal transmission lines 732 originating in package 1510 , such as originating at levels Lm-Lq at second horizontal location 731 of package 1510 and extending upward to and terminate at a bottom surface of chip 708 .

FIG. 15 also show vertical data signal transmission lines 733 originating in chip 708 and extending vertically downward to levels Lm-Lq of package 1510 at first horizontal location 734 of package 1510 .

FIG. 15 also shows package device horizontal data signal transmission lines 735 originating at third horizontal location 734 in levels Lm-Lq of package 1510 and extend horizontally through levels Lm-Lq along length L 74 of levels Lm-Lq to second horizontal location 736 in levels Lm-Lq of package 1510 .

Next, FIG. 15 shows vertical data signal transmission lines 737 originating in package 710 , such as originating at levels Lm-Lq at fourth horizontal location 736 of package 1510 , and extending upward to and terminate at a bottom surface of chip 709 . In some cases the data signal transmission signals of lines 720 , 122 , 724 , 726 , 128 , 730 , 732 , 733 , 735 and/or 737 are or include data signal transmission signals to an IC chip (e.g., chip 702 , 708 or 709 ), patch 1504 , interposer 1506 , package 1510 , or another device attached to thereto, such as described for FIG. 1 .

In some cases, lines 720 , 122 and 724 also include power and ground signal lines or traces, such as described for FIG. 7 (not shown) that also extend horizontally from location 121 to location 723 within levels Lm-Lq, or other levels of patch 1504 .

In some cases, lines 724 , 726 and 128 also include power and ground signal lines or traces, such as described for FIG. 7 (not shown) that also extend horizontally from location 725 to location 727 within levels Lm-Lq, or other levels of interposer 1506 . In some cases the power and ground signals transmitted and received (or existing) on the power and ground signal lines of lines 720 , 122 , 724 and 726 originate at or are provided by patch 1504 or interposer 1506 , or another device attached to thereto, such as described for FIG. 1 .

In some cases, lines 128 , 730 and 732 also include power and ground signal lines or traces, such as described for FIG. 7 (not shown) that also extend horizontally from location 729 to location 731 within levels Lm-Lq, or other levels of package 1504 . In some cases the power and ground signals transmitted and received (or existing) on the power and ground signal lines of lines 128 , 730 and 732 originate at or are provided by package 1510 or interposer 1506 , or another device attached to thereto, such as described for FIG. 1 .

In some cases, lines 733 , 735 and 737 also include power and ground signal lines or traces, such as described for FIG. 7 (not shown) that also extend horizontally from location 734 to location 736 within levels Lm-Lq, or other levels of package 1504 . In some cases the power and ground signals transmitted and received (or existing) on the power and ground signal lines of lines 733 , 735 and 737 originate at or are provided by package 1510 or interposer 1506 , or another device attached to thereto, such as described for FIG. 1 .

FIG. 15 also shows a schematic cross-sectional length view of a ground isolated horizontal data signal transmission line package device. In this case, the package device is combined horizontal ground isolation planes and ground isolation coaxial lines separated data signal line package device 1550 (e.g., instead of, but combining package device 750 of FIGS. 7-10 and package device 1150 of FIGS. 11-14 ). Device 1550 may be a “package device” representing any of patch 1504 , interposer 1506 or package 1510 . It can be appreciated that device 1550 may represent another package device having horizontal data transmission lines. In some cases, package device 1550 represents horizontal data signal transmission lines 122 of patch 1504 through perspective A-A′; horizontal data signal transmission lines 726 of interposer 1506 through perspective B-B′; horizontal data signal transmission lines 730 of package 1510 through perspective C-C′; or horizontal data signal transmission lines 735 of package 1510 through perspective D-D′, such as described for package device 750 and patch 704 , interposer 706 or package 710 .

FIG. 16A is an exploded schematic cross-sectional length view of a ground isolated horizontal data signal transmission line package device of FIG. 15 showing combined horizontal ground isolation planes and ground isolation coaxial lines separating horizontal data signal receive and transmit lines. FIG. 16A shows an exploded schematic cross-sectional length view of combined horizontal ground isolation planes and ground isolation coaxial lines separated data signal line package 1550 , such as a “package device” representing any of patch 1504 (e.g., a view through perspective A-A′), interposer 1506 (e.g., a view through perspective B-B′) or package 1510 (e.g., a view through perspective C-C′ or D-D″). Package device 1550 is shown having interconnect level Lm formed over or onto (e.g., touching) Level Ln which is formed over or onto Level Lx which is formed over or onto (e.g., touching) Level Lo which is formed over or onto (e.g., touching) Level Lq which is formed over or onto (e.g., touching) Level Ly. It also shows layer 805 formed onto (e.g., touching) layer 1210 , which is formed onto layer 1212 , which is formed onto layer 1220 , which is formed onto layer 1222 , which is formed onto layer 1515 , which is formed onto layer 816 , which is formed onto layer 1230 , which is formed onto layer 1232 , which is formed onto layer 1240 , which is formed onto layer 1242 , which is formed onto layer 1520 , which is formed onto layer 826 .

FIG. 16B is an exploded schematic cross-sectional side view of a ground isolated horizontal data signal transmission line package device of FIGS. 15 and 16A showing ground isolation planes separating vertically adjacent levels of horizontal data signal receive and transmit lines; and ground isolation “coaxial” lines separating vertically adjacent and horizontally adjacent ones of horizontal data signal receive and transmit lines. FIG. 16B shows an exploded schematic cross-sectional side view of combined horizontal ground isolation planes and ground isolation coaxial lines separated data signal line package 1550 of FIGS. 15 and 16A such as a “package device” representing any of patch 1504 (e.g., along length L 71 ), interposer 1506 (e.g., along length L 72 ) or package 1510 (e.g., along length L 73 and/or L 74 ). Package device 1550 is shown having interconnect levels Lm, Ln, Lo, Lq and Ly (e.g., see FIG. 16A ).

More specifically, FIG. 16B shows package device 1550 having levels Lm, Ln, Lo, Lq and Ly and layers 805 , 1210 , 1212 , 1220 , 1222 , 1510 , 816 , 1230 , 1232 , 1240 , 1242 , 1520 and 826 along length L 7 p . Length L 7 p may represent any of lengths L 71 , L 72 , L 73 or L 74 . In some cases, levels Lm-Ly and layers 805 - 826 in FIG. 16B may include (e.g., along with other materials that are beyond the edge of length L 7 p ) or are (e.g., within length L 7 p ) the same as in the descriptions above for levels Lm-Ly and layers 805 - 826 in FIGS. 9 and 10A , respectively.

FIG. 16B shows layer 1212 that may include (e.g., along with other materials that are beyond the edge of length L 7 p ) or be (e.g., within length L 7 p ) lines 738 , lines 1160 and portions 703 b . For example, layer 1212 is shown having “ 738 / 1160 / 703 b ” which may represent lines 738 , lines 1160 , and/or portions 703 b extending along length L 7 p . FIG. 16B shows layer 1222 that may include (e.g., along with other materials that are beyond the edge of length L 7 p ) or be (e.g., within length L 7 p ) lines 738 , lines 1162 and portions 703 b . FIG. 16B shows layer 1232 that may include (e.g., along with other materials that are beyond the edge of length L 7 p ) or be (e.g., within length L 7 p ) lines 748 , lines 1164 and portions 703 b . FIG. 16B shows layer 1242 that may include (e.g., along with other materials that are beyond the edge of length L 7 p ) or be (e.g., within length L 7 p ) lines 748 , lines 1166 and portions 703 b . In some cases, ground isolation planes 760 , 762 and 764 ; and ground isolation lines 1160 , 1162 , 1164 or 1166 are each electronically coupled to (e.g., touching, formed with, or directly attached to) ground contacts or other ground signal providing circuitry of device 1550 , such as ground contacts disposed in the same layer as each ground plane or line, respectively.

More specifically, FIGS. 10A-B show package device 1550 having layer 805 that includes (e.g., along with other materials that are beyond the edge of width W 73 ) or is (e.g., within width W 73 ) package device conductor material (e.g., pure conductor or metal) ground isolation plane 760 separating upper layer 1210 of package device dielectric material (and package device horizontal data signal receive transmission lines 738 (e.g., data signal RX 738 )) of level Lm from package device non-conductor material (and vertically adjacent horizontal data signal transmit transmission lines (e.g., data signal TX or RX lines)) of a level or layer of the package device that is above plane 760 . Plane 760 may be the same as described for FIGS. 7-10 , except that it is formed on level Lm, where level Lm is as described for FIGS. 11-14 , and may be connected as appropriate for system 1500 .

Plane 760 may be directly physically connected to, electrically coupled to, or directly attached to ground contacts or via contacts in the same layer 805 as plane 760 . In some cases, plane 760 is or includes ground signals from, originating at, provided by, or generated by patch 1504 , interposer 1506 , package 1510 , or another device attached to thereto as described for patch 704 , interposer 706 , package 710 , or another device at FIGS. 7-10 . This signal may have a voltage level as described at FIGS. 7-10 .

Next, FIGS. 10A-B show package device 1550 having Level Lm with upper layer 1210 formed over or onto (e.g., touching) lower layer 1212 which is formed over or onto upper layer 1220 of level Ln. Level Lm, upper layer 1210 , and lower layer 1212 may be the same a described for FIGS. 11-14 , except that layer 805 is formed onto layer 1210 and lines 1160 may be connected as appropriate for system 1500 .

In some cases, lines 1160 of layer 1212 may be directly physically connected to, electrically coupled to, or directly attached to ground contacts or via contacts in the same layer 1212 or level Lm as lines 1160 . In some cases the ground lines 1160 are or include ground signals from, originating at, provided by, or generated by patch 1504 , interposer 1506 , package 1510 , or another device attached to thereto as described for patch 704 , interposer 706 , package 710 , or another device at FIGS. 11-14 . This signal may have a voltage level as described at FIGS. 11-14 .

Next, FIGS. 10A-B show package device 1550 having Level Ln with upper layer 1220 formed over or onto (e.g., touching) lower layer 1222 which is formed over or onto upper layer 1515 of level Lx. Level Ln, upper layer 1220 , and lower layer 1222 may be the same a described for FIGS. 11-14 , except that layer 1222 is formed onto layer 1515 and lines 1162 may be connected as appropriate for system 1500 .

In some cases, lines 1162 of layer 1222 may be directly physically connected to, electrically coupled to, or directly attached to ground contacts or via contacts in the same layer 1222 or level Ln as lines 1162 . In some cases the ground lines 1162 are or include ground signals from, originating at, provided by, or generated by patch 1504 , interposer 1506 , package 1510 , or another device attached to thereto as described for patch 704 , interposer 706 , package 710 , or another device at FIGS. 11-14 . This signal may have a voltage level as described at FIGS. 11-14 .

Next, FIGS. 10A-B show package device 1550 having Level Lx with upper layer 1515 formed over or onto (e.g., touching) lower layer 816 which is formed over or onto upper layer 1230 of level Lo. Upper layer 1515 may be the same a layer 1210 described for FIGS. 11-14 , except that it is formed onto layer 816 and located vertically adjacent to and between layers 1222 and 816 . Lower layer 816 may include or be ground isolation plane 762 such as described for FIGS. 7-10 . Plane 762 may be the same as described for FIGS. 7-10 , except that it is formed on level Lo, where level Lo is as described for FIGS. 11-14 , and may be connected as appropriate for system 1500 .

Plane 762 may be directly physically connected to, electrically coupled to, or directly attached to ground contacts or via contacts in the same layer 816 as plane 762 . In some cases, plane 762 is or includes ground signals from, originating at, provided by, or generated by patch 1504 , interposer 1506 , package 1510 , or another device attached to thereto as described for patch 704 , interposer 706 , package 710 , or another device at FIGS. 7-10 . This signal may have a voltage level as described at FIGS. 7-10 .

Next, FIGS. 10A-B show package device 1550 having Level Lo with upper layer 1230 formed over or onto (e.g., touching) lower layer 1232 which is formed over or onto upper layer 1240 of level Lq. Level Lo, upper layer 1230 , and lower layer 1232 may be the same a described for FIGS. 11-14 , except that layer 816 is formed onto layer 1230 and lines 1164 may be connected as appropriate for system 1500 .

In some cases, lines 1164 of layer 1232 may be directly physically connected to, electrically coupled to, or directly attached to ground contacts or via contacts in the same layer 1232 or level Lm as lines 1164 . In some cases the ground lines 1164 are or include ground signals from, originating at, provided by, or generated by patch 1504 , interposer 1506 , package 1510 , or another device attached to thereto as described for patch 704 , interposer 706 , package 710 , or another device at FIGS. 11-14 . This signal may have a voltage level as described at FIGS. 11-14 .

Next, FIGS. 10A-B show package device 1550 having Level L q with upper layer 1240 formed over or onto (e.g., touching) lower layer 1242 which is formed over or onto upper layer 1520 of level Ly. Level Lq, upper layer 1240 , and lower layer 1242 may be the same a described for FIGS. 11-14 , except that level 1242 is formed onto layer 1520 and lines 1166 may be connected as appropriate for system 1500 .

In some cases, lines 1166 of layer 1242 may be directly physically connected to, electrically coupled to, or directly attached to ground contacts or via contacts in the same layer 1242 or level Lm as lines 1166 . In some cases the ground lines 1166 are or include ground signals from, originating at, provided by, or generated by patch 1504 , interposer 1506 , package 1510 , or another device attached to thereto as described for patch 704 , interposer 706 , package 710 , or another device at FIGS. 11-14 . This signal may have a voltage level as described at FIGS. 11-14 .

Next, FIGS. 10A-B show package device 1550 having Level Ly with upper layer 1520 formed over or onto (e.g., touching) lower layer 826 which may be formed over or onto another layer of device 1550 . Upper layer 1520 may be the same a layer 1210 described for FIGS. 11-14 , except that it is formed onto layer 826 and located vertically adjacent to and between layers 1242 and 826 . Lower layer 826 may include or be ground isolation plane 764 such as described for FIGS. 7-10 , except that layer 1520 is formed onto layer 826 and it may be connected as appropriate for system 1500 . Plane 764 may be the same as described for FIGS. 7-10 , except that it is formed on a lower level of package device 1550 , and may be connected as appropriate for system 1500 .

Plane 764 may be directly physically connected to, electrically coupled to, or directly attached to ground contacts or via contacts in the same layer 826 as plane 764 . In some cases, plane 764 is or includes ground signals from, originating at, provided by, or generated by patch 1504 , interposer 1506 , package 1510 , or another device attached to thereto as described for patch 704 , interposer 706 , package 710 , or another device at FIGS. 7-10 . This signal may have a voltage level as described at FIGS. 7-10 .

The embodiments of a ground isolated horizontal data signal transmission line package device 1550 may be described as a combined horizontal ground isolation planes and ground isolation coaxial lines separated data signal line package 1550 .

The ground planes 760 , 762 and 764 of package device 1550 may each be a ground isolation plane or planar structure across a layer vertically between each horizontal data signal transmission line (e.g., RX or TX) of two levels (e.g., Lm and Ln; or Lo and Lq) and all data signal transmission lines of all levels above (or below) that ground plane (e.g., that one level), thus reducing (e.g., by a factor or 2, 3, 5 or 10 times) “data signal transmission line” crosstalk between each of the horizontal data signal transmission lines of the one level (e.g., an “agressor”) and all data signal transmission lines of all levels above (or below) that ground plane (e.g., those two levels).

The ground isolation lines 1160 , 1162 , 1164 or 1166 horizontally, vertically and coaxially surrounding the horizontal data signal transmission lines 738 RX or 748 TX in each of levels Lm-Lq may (1) reduce crosstalk between vertically adjacent ones of the horizontal data signal transmission lines 738 RX or 748 TX of different levels of levels Lm-Lq; and (2) reduce crosstalk between horizontally adjacent ones of the horizontal data signal transmission lines 738 RX or 748 TX in each of same level of levels Lm-Lq.

More specifically, FIGS. 9-10B show that each of levels Lm-Lq may have an upper layer of non-conductive (e.g., dielectric) material 703 a ; and a lower layer having conductor material (e.g., pure conductor or metal) data signal lines (e.g., traces) 738 RX or 748 TX between (1) horizontally adjacent non-conductive (e.g., dielectric) material portions 703 b that are between (2) horizontally adjacent ground isolation lines 1160 , 1162 , 1164 or 1166 (e.g., traces) of conductor material (e.g., pure conductor or metal), such as described for FIGS. 11-14 .

In some cases, ground lines of package device 1550 (e.g., lines 1160 , 1162 , 1164 and 1166 ) may reduce or decrease (e.g., by a factor or 2, 3, 5 or 10 times) “data signal transmission line” crosstalk (and optionally may increase electronic isolation) between one of the horizontal data signal transmission lines of one level (e.g., an “agressor” of level Lm, Ln, Lo or Lq) and a horizontally adjacent data same type (e.g., RX or TX) signal transmission line of the same level (e.g., that one level Lm, Ln, Lo or Lq), such as described for FIGS. 11-14 . This may occur for each of the horizontal RX data signal lines in level Lm, Ln, Lo and Lq, such as described for FIGS. 11-14 .

Each level of levels Lo-Lq of FIGS. 9-10B may also have staggered horizontal (e.g., lateral) spacing of its lower layer conductor material data signal lines 738 RX or 748 TX as compared to ground isolation lines 1160 , 1162 , 1164 or 1166 of a vertically adjacent level above it, such as described for FIGS. 11-14 . However, in some cases, level Lo is not staggered with respect to level Ln as described for FIGS. 11-14 (e.g., lines 1162 are directly above lines 1164 ), such as due to isolation plane 762 providing vertical ground isolation for signal lines of level Ln in place of isolation lines 1164 of level Lo, and for signal lines of level Lo in place of isolation lines 1162 of level Ln.

Here, in some cases, one ground isolation line and one ground isolation plane vertically surround (e.g., are vertically to the top and bottom of) two non-conductive material layers 703 a that vertically surround (e.g., are vertically to the top and bottom of) each data signal RX or TX line. For example, lines 1162 are vertically below each of lines 738 of level Lm, and ground isolation plane 760 is vertically above each of lines 738 of level Lm. Thus, lines 1162 and plane 760 vertically surround each of lines 738 of level Lm. Also, lines 1160 are vertically above each of lines 738 of level Ln, and ground isolation plane 762 is vertically below each of lines 738 of level Ln. Thus, lines 1160 and plane 762 vertically surround each of lines 738 of level Ln. In another example, lines 1166 are vertically below each of lines 748 of level Lo, and ground isolation plane 762 is vertically above each of lines 748 of level Lo. Thus, lines 1166 and plane 762 vertically surround each of lines 748 of level Lo. Next, lines 1164 are vertically above each of lines 748 of level Lq, and ground isolation plane 764 is vertically below each of lines 748 of level Lq. Thus, lines 1166 and plane 764 vertically surround each of lines 748 of level Lq. In some cases, the one ground isolation line and one ground isolation plane are described as vertically surrounding (e.g., are vertically above and below) each data signal line 738 RX or 748 TX in each of levels Lm-Lq.

In some cases, the combination of the ground planes of package device 1550 (e.g., planes 760 , 762 and 764 ) and the ground lines of package device 1550 (e.g., lines 1160 , 1162 , 1164 and 1166 ) may reduce (e.g., by a factor or 2, 3, 5 or 10 times) “data signal transmission line” crosstalk (and optionally may increase isolation) between one of the horizontal data signal transmission lines of one level having signal lines (e.g., an “agressor” of level Lm, Ln, Lo or Lq) and a vertically adjacent data signal transmission line of a level that is two levels (e.g., two levels of levels having signal lines, or two levels of levels Lm, Ln, Lo or Lq) above or below the one transmission line (e.g., above or below the agressor level Lm, Ln, Lo or Lq).

In some cases, the levels of signal lines are also (or instead) vertically surrounded by the isolation planes, in addition to being vertically surrounded by the isolation lines (e.g., either above or below each level of signal lines). In one example, each pair of ground isolation planes of package device 1550 (e.g., pair of planes 760 and 762 ; or 762 and 764 ) vertically surrounds each level of the signal lines. For example, plane 762 may reduce (e.g., by a factor or 2, 3, 5 or 10 times) “data signal transmission line” vertical crosstalk (and optionally may increase isolation) produced or created by an “agressor” horizontal RX data signal transmission line 738 of levels Lm and Ln from reaching a vertically adjacent TX data signal transmission line of level Lo that is disposed two levels (e.g., two levels of levels having signal lines, or two levels of levels Lm, Ln, Lo or Lq) below the “agressor” RX line of levels Lm and Ln, such as due to plane 762 being disposed vertically between the signal transmission lines of level Lo and levels Lm and Ln. This may be in addition to vertical isolation provided by an isolation line, such as described above. It is considered that plane 760 cause the same reduction in vertical crosstalk caused by the RX lines of levels Lm and Ln from reaching the a vertically adjacent TX lines of a level above plane 760 . Here it can be said the planes 760 and 762 vertically surround levels Lm and Ln.

Similarly, in some cases, plane 762 may reduce (e.g., by a factor or 2, 3, 5 or 10 times) “data signal transmission line” vertical crosstalk (and optionally may increase isolation) produced or created by an “agressor” horizontal TX data signal transmission line 748 of levels Lo and Lq from reaching a vertically adjacent RX data signal transmission line of level Ln that is disposed two levels (e.g., two levels of levels having signal lines, or two levels of levels Lm, Ln, Lo or Lq) above the “agressor” TX line of levels Lo and Lq, such as due to plane 762 being disposed vertially between the signal transmisstion lines of level Ln and levels Lo and Lq. It is considered that plane 764 cause the same reduction in vertical crosstalk caused by the TX lines of levels L 7 p and Lq from reaching the a vertically adjacent RX lines of a level below plane 764 . Here it can be said the planes 764 and 762 vertically surround levels Lo and Lq.

In some cases, due to the ground isolation planes (e.g., plane 762 ), it may not be necessary to horizontally stagger signal lines of level Lo from signal lines of level Ln. In addition, in some cases, it may not be necessary to horizontally stagger signal lines of level Lo from signal lines of level Lm. Also, in some cases, it may not be necessary to horizontally stagger signal lines of level Lo from signal lines of level Lq. Furthermore, in some cases, it may not be necessary to horizontally stagger signal lines of level Lq from signal lines of level Lm.

According to embodiments, by being planes and lines of conductive material electrically grounded (e.g., having a ground signal), each of ground isolation lines 1160 - 1166 and/or planes 760 - 164 may absorb, or shield electromagnetic crosstalk signals produced by (or increase electronic isolation from) one data signal transmission line of the vertically adjacent levels (of levels Lm, Ln, Lo or Lq) two levels above (or below) the lines, from reaching each of the data signal transmission line of the one level, due to the amount of grounded conductive material, and location of the conductive grounded material between the two levels. This may include reducing electrical crosstalk caused by undesired capacitive, inductive, or conductive coupling of a first data signal type (e.g., RX or TX) received or transmitted through one of the horizontal data signal transmission lines of the vertically adjacent levels (e.g., an “agressor”) from reaching (e.g., effecting or being mirrored in) a second data signal type (e.g., TX or RX; the opposite of the first type RX or TX, respectively) received or transmitted through the horizontal data signal transmission lines of the one level that the ground lines shields.

The combination of the two ground isolation lines (e.g., two of each of lines 1160 , 1162 , 1164 or 1166 ) are horizontally surrounding each data signal line 738 RX or 748 TX in each of levels Lm-Lq; and the two ground isolation planes (e.g., pair of planes 760 and 762 ; or 762 and 764 ) and optionally isolation lines (e.g., a pair of lines 1160 and plane 762 ; or plane 762 and lines 1166 ) vertically surrounding each data signal line 738 RX or 748 TX in each of levels Lm-Lq may be described as four ground isolation lines “coaxially” surrounding each data signal line 738 RX or 748 TX in each of levels Lm-Lq.

In some cases, each date signal RX line of level Ln (e.g., layer 1222 ) can be said to be coaxially surrounded by being (1) horizontally surrounded by two ground isolation lines 1162 of level Ln (e.g., layer 1222 ), (2) vertically surrounded by ground isolation line 1160 of level Lm (and/or optionally plane 760 ) and plane 762 of level Lx (and/or optionally line 1164 of level Lo). Also, in some cases, each date signal TX line of level Lo (e.g., layer 1232 ) can be said to be coaxially surrounded by being (1) horizontally surrounded by two ground isolation lines 1164 of level Lo (e.g., layer 1232 ), (2) vertically surrounded by ground isolation line 1166 of level Lq (and/or optionally plane 764 ) and plane 762 of level Lx (and/or optionally line 1162 of level Ln).

In some cases, the four ground isolation lines “coaxially” surrounding each horizontal data signal line 738 RX or 748 TX in each of levels Lm-Lq provides or causes the combination of (1) the two ground isolation lines (e.g., two of each of lines 1160 , 1162 , 1164 or 1166 ) horizontally surrounding each data signal line 738 RX or 748 TX in each of levels Lm-Lq to reduce or decrease (e.g., by a factor or 2, 3, 5 or 10 times) “data signal transmission line” crosstalk (and optionally may increase electronic isolation) between each of the horizontal data signal transmission lines of one level (e.g., level Lm, Ln, Lo or Lq) and a horizontally adjacent data same type (e.g., RX or TX) signal transmission line of the same level (e.g., that one level Lm, Ln, Lo or Lq); and (2) the ground isolation lines and/or planes vertically surrounding each data signal line 738 RX or 748 TX in each of levels Lm-Lq to decrease (e.g., by a factor or 2, 3, 5 or 10 times) “data signal transmission line” crosstalk (and optionally may increase isolation) between one of the horizontal data signal transmission lines of one level (e.g., an “agressor” of level Lm, Ln, Lo or Lq) and a vertically adjacent data signal transmission line of a level two levels of level Lm, Ln, Lo or Lq above or below the one transmission line. In some embodiments, ground isolation lines and planes reduce electrical crosstalk and increase electrical isolation as noted above without re-ordering any horizontal order or sequence of the horizontal data signal transmission lines in a layer or level.

It is noted that for package device 1550 , signal lines of level Lm are diagonally isolated by plane 760 from signal lines above plane 760 ; that signal lines of level Ln are diagonally isolated by plane 762 from signal lines of levels Lo and Lq below plane 762 ; that signal lines of level Lo are diagonally isolated by plane 762 from signal lines of levels Ln and Lm above plane 762 ; and that signal lines of level Lq are diagonally isolated by plane 766 from signal lines below plane 766 .

Due to the ground isolation planes, in some cases, it may not be necessary to diagonally space (e.g., by a predetermined, tuning determined, selected or otherwise designed distance) the RX and TX lines of the different levels sufficiently so that crosstalk is low enough and isolation is high enough for the data signal lines to operate at the speeds and other characteristics as noted herein. In some cases, due to plane 762 it may not be necessary to provide such diagonally spacing of the signal lines of level Lo from signal lines of level Ln.

FIG. 17 shows a plot of eye height (EH) curves; and eye width (EW) curves of an eye diagram produced by testing one of horizontal data signal transmission signal lines for a range of horizontal data signal transmission line width and ground line width, such as where spacing is constant between horizontally adjacent signal lines and ground lines. In some cases, the horizontal signal lines 738 and 748 ; and the ground lines (e.g., 1160 , 1162 , 1164 and 1166 ) of device 1550 are impedance tuned (e.g., see FIG. 17 ) to minimize impedance discontinuity and crosstalk between vertically adjacent and horizontally adjacent ones of signal lines 738 or 748 (e.g., a channel) of device 1550 . This may include performing such tuning to determine or identify: (1) a selected target width W 71 (and optionally height H 73 ) of one of signal lines 738 or 748 (e.g., given other set or known heights and widths such as noted below); and (2) a selected target width W 74 (and optionally height H 73 ) of one of the ground lines (e.g., 1160 , 1162 , 1164 or 1166 ) (e.g., given other set or known heights and widths such as noted below) that provides a the best channel performance as showed as the lowest amplitude cross point of eye height (EH) or eye width (EW) curves (e.g., see FIG. 17 ) of an eye diagram (e.g., see FIG. 9B ) produced by testing one of signal lines 738 or 748 . The EH and EW curves (e.g., curves 1710 - 1711 and 1715 - 1716 ) may be output signal measure (or computer modeled) at a location of the data signal line 738 or 748 when (e.g., as a result of running) one or more input test data signals are sent through length L 7 p of the data signal line such as described for FIGS. 3A-B to determine or identify isolated horizontal data signal transmission line widths W 71 and ground line width W 74 (optionally, and spacing W 75 ) that are single line impedance tuned (e.g., see FIG. 17 ) in the routing segment of device 1550 along the channel of signal lines 738 and 748 along length L 7 p.

Impedance tuning of the signal line may be based on or include as factors: horizontal data signal transmission line width W 71 , height H 73 , length L 7 p ; horizontal ground isolation line width W 74 , height H 73 , length L 7 p ; width W 75 between the isolation lines and horizontally adjacent horizontal data signal transmission lines of device 1550 ; and height H 74 between a signal line and a vertically adjacent grounding line (or isolation plane) of device 1550 . In some cases, once the length L 7 p , width W 75 , height H 74 and height H 73 are known (e.g., predetermined or previously selected based on a specific design of a package device 1550 ), then tuning is performed (e.g., computer simulation, actual “beta” device testing, or other laboratory testing) to determine or identify a ranges of width W 71 and W 74 that provide the best channel performance as showed as the lowest amplitude cross point of eye height (EH) or eye width (EW) curves of an eye diagram produced by testing one of signal lines 738 or 748 .

For example, FIG. 17 shows a plot of eye height (EH) curves 1710 and 1711 ; and eye width (EW) curves 1715 and 1716 of an eye diagram (e.g., see FIG. 9B ) produced by testing one of horizontal data signal transmission signal lines 738 or 748 for a range of horizontal data signal transmission line width W 71 and ground line width W 74 , such as where spacing W 72 is constant between horizontally adjacent signal lines (e.g., lines 738 or 748 ) and ground lines (e.g., lines 1160 , 1162 , 1164 or 1166 ). The testing may include measuring or modeling an output signal in response to an input signals such as step up (e.g., ) and down (e.g., ) signals as noted above for FIG. 9A . EH curve 1710 may be the EH curve for a first design or use of device 1550 that is independent of (e.g., not based on or does not consider) the above noted factors (e.g., horizontal data signal transmission line width W 71 , ground line width W 74 , height H 73 , length L 7 p ; width W 75 between the signal line and a horizontally adjacent ground lines of device 750 ; and height H 74 between the signal line and a vertically adjacent grounding line or isolation plane of device 750 ). EH curve 1711 may be the EH curve for a second, different design or use of device 1550 that is independent of the above noted factors. EW curve 1715 may be the EW curve for the first design or use of device 750 that is independent of the above noted factors. EW curve 1716 may be the EW curve for the second, different design or use of device 1550 that is independent of the above noted factors.

In some cases, such a design or use may include where the different curves represent different manufacture variation combinations, such as where a low impedance package (e.g., package 1510 ) is connected to high impedance interposer (e.g., interposer 1506 ). In some cases, such a design or use may include where the different curves represent different corner combinations, or possible component variation combinations. In some cases, such a design or use may include where the different curves represent different designs or usees to tune the impedance to maximize the channel performance. In some cases, FIG. 11A shows EH and EW curves from various channels combining possible package and interposer manufacturing corners, (max/typical/min impedance corners from manufacturing variations). In some cases, for example, max Z patch+min Z interposer+max Z package, where Z denotes impedance. In some cases, the common or intersection area below the EH or EW curvers shows the channel EH/EW solution space. In some cases, the optimized impedance value is tied to the the cross point of EH or EW curves which provides the max EH/EW enveloping all the possible channel manufacture variations.

As described for EH curves 910 - 911 of FIGS. 3A-B , EH curves 1710 - 1711 may be examples of an eye-height for different designs, and different signal line width W 71 and ground line width W 74 (e.g., where spacing W 72 is constant) for device 1550 . Also, as described for EW curves 315 - 316 of FIGS. 3A-B , EW curves 1715 - 1716 may be examples of an eye-width for the different designs, and the different signal line width W 71 and ground line width W 74 (e.g., where spacing W 72 is constant) for device 1550 .

In some cases, curves 1710 - 1711 and 1715 - 1716 are for a selected (e.g., predetermined, desired, constant or certain) length L 7 p of the horizontal data signal transmission line (e.g., RX line 738 or TX line 748 ) and ground isolation lines (and isolation planes) of package device 1550 . In some cases, curves 1710 - 1711 and 1715 - 1716 are also for a selected signal line and ground line height H 73 and spacing H 74 between the signal line and a vertically adjacent ground line (or isolation plane).

In some other cases, tuning includes knowing length L 7 p , width W 75 and height H 74 , then tuning to determine or identify a range of width W 71 , width W 74 and height H 73 that provides a predetermined or target impedance for the line.

More specifically, FIG. 17 shows graph 1700 plotting the amplitude of tuning curves 1710 - 1711 and 1715 - 1716 along vertical Y-axis 1720 for different pairs of width W 71 of a signal line (e.g., RX line 738 or TX line 748 ) and width W 74 of ground lines (e.g., where spacing W 75 is constant value or distance between horizontally adjacent one of the signal lines (e.g., RX or TX lines 738 or 748 ) and ground lines (e.g., lines 1160 , 1162 , 1164 or 1166 ) along horizontal X-axis 1730 . Although FIG. 17 shows the amplitude of curves 1710 - 1711 and 1715 - 1716 on the same graph 1700 , it can be appreciated that they may be on different graphs having different amplitude scaled Y-axis but the same X-axis 1730 (e.g., the curves are all shown vertically scaled on graph 1700 (e.g., moved up or down axis 1720 ) to compare the cross points for the curves). Curves 1710 - 1711 and 1715 - 1716 may be output signal measure (or computer modeled) at a location of the data signal line when (e.g., as a result of running) the one or more test data signals are sent through length L 7 p of the data signal line (e.g., RX line 738 or TX line 748 ) of device 1550 .

Graph 1700 shows cross point 1712 of EH curves 1710 and 1711 . I can be appreciated that curves 1710 and 1711 represent more than two curves, but that those curves have a lowest Y-axis cross point at point 1712 . Graph 1700 shows cross point 1717 of EW curves 1715 and 1716 . I can be appreciated that curves 1715 and 1716 represent more than two curves, but that those curves have a lowest Y-axis cross point at point 1717 .

FIG. 17 shows EW and EH curve amplitudes along vertical axis 1720 having values W″, X″, Y″ and Z″, such as representing different amplitudes for curves 1710 - 1711 or 1715 - 1716 (e.g., curves 1715 - 1716 or 1710 - 1711 may be scaled, respectively, to fit onto the same graph or plot). In some cases, for curves 1710 - 1711 values W″, X″, Y″ and Z″, represent different linearly increasing EH signal amplitude values (e.g., voltage amplitudes of EH derived from a test signal) such as 0.2, 0.25, 0.3 and 0.35 volts. In some cases, for curves 1715 - 1716 values W″, X″, Y″ and Z″, represent different linearly increasing EW signal time values (e.g., time values of EW derived from a test signal) such as 4.0, 4.5, 5.0 and 5.5 E-11 seconds. FIG. 17 shows pairs of width W 71 /width W 74 along horizontal axis 1730 having pair values A″/B″, C″/D″, E″/F″, G″/H″, I″/J″, K″/L″, M″/N″ and O″/P″. In some cases, the aggregate (e.g., addition) of each pair of values (e.g., value A″ plus value B″; or value O″ plus value P″, etc.) represents the same sum or a first constant; and that first constant plus two times the spacing width W 75 is a second constant (e.g., such as pitch width PW 2 ). In some cases, the signal line width W 71 and ground line width W 74 vary in an inversely proportional manner to add up to the first constant, such as where if W 71 increases by a value (e.g., W 71 +W″), W 74 decreases by that value (e.g., W 74 -W″), and vice versa. In some cases, the signal line width W 71 and ground line width W 74 may be described as being inversely proportional. In some cases, (1) the second constant is signal line to signal lined pitch width PW 2 ; and (2) the signal line width W 71 and ground line width W 74 vary in an inversely proportional manner so that the addition of W 71 +W 74 +2×W 5 =PW 2 (e.g., the second constant).

In some cases, PW 2 is between 100 and 200 um. In some cases, it is between 720 and 150 um. In some cases it is between 730 and 140 um. In some cases, pair values A″/B″ represent width W 71 between 60 and 80 um, and width W 74 between 55 and 75 um; pair values O″/P″ represent width W 71 between 25 and 45 um, and width W 74 between 90 and 110 um; and the other pairs are at linear intervals between values A″/B″ and values O″/P″. In some cases, pair values A″/B″ represent width W 71 /width W 74 of 70/65 um, pair values C″/D″ represent width W 71 /width W 74 of 65/70 um, pair values E″/F″ represent width W 71 /width W 74 of 60/75 um, pair values G″/H″ represent width W 71 /width W 74 of 55/80 um, pair values I″/J″ represent width W 71 /width W 74 of 50/85 um, pair values K″/L″ represent width W 71 /width W 74 of 45/90 um, pair values M″/N″ represent width W 71 /width W 74 of 40/95 um, and pair values O″/P″ represent width W 71 /width W 74 of 35/100 um.

In some cases, Y-axis 1720 represents eye-height or eye-width which are the figures of merit to quantify the channel performance of the tested signal line (e.g., RX line 738 or TX line 748 ); and X-axis 1730 is the combination of signal line width W 71 /width W 74 (with constant spacing W 75 ) at constant pitch (line width W 71 +width W 74 +2×W 5 =constant pitch PW, such as PW 2 ). According to embodiments, the impedance tuning of horizontal signal line 738 or 748 of device 1550 includes (or is) selecting (or “tuning”) single horizontal routing signal line (e.g., TX and RX line) impedance, such as to select (or “tune” the TX and RX lines to or at) the combination of signal line width W 71 /width W 74 to an optimized point to achieve the best channel performance as showed as the lowest cross point of EH or EW curves (e.g., such as shown in FIG. 17 ).

According to embodiments, the impedance tuning of horizontal signal line 738 or 748 of device 1550 includes various possible selections of one or a range of locations on X-Axis 1730 selected based on or as a result of a calculation using EH and EW cross point 1712 and/or point 1717 . It can be appreciated that such tuning may include selecting or identifying one or a range of width W 71 /width W 74 along axis 1730 for one or both of (1) signal lines 738 and ground line pairs 1160 / 1162 , or (2) signal lines 748 and ground line pairs 1164 / 1166 , based on or as a result of a calculation using cross point 1712 and/or point 1717 .

In some cases, such impedance tuning includes or is selecting the lowest amplitude cross point 1712 of eye height (EH) curves 1710 - 1712 or of eye width (EW) curves 1715 - 1716 of an eye diagram produced by testing one of signal lines 738 or 748 . Here, for example, as shown in FIG. 17 , X-axis 1730 location I″/J″ which is under point 1712 ; or a location at midpoint between I″/J″ and K″/L″ which is under point 1712 may be chosen for width W 71 and width W 74 for one or both of (1) signal lines 738 and ground line pairs 1160 / 1162 , or (2) signal lines 748 and ground line pairs 1164 / 1166 . In some cases, one of those locations may be used for both of (1) signal lines 738 and ground line pairs 1160 / 1162 , and (2) signal lines 748 and ground line pairs 1164 / 1166 . In some cases, a range of width W 71 and width W 74 around either of those locations (e.g., a W 71 and W 74 tolerance, such as 5 or 10 percent around either location) may be used for both of (1) signal lines 738 and ground line pairs 1160 / 1162 , and (2) signal lines 748 and ground line pairs 1164 / 1166 . In some cases, a range of width W 71 and width W 74 between those locations (e.g., a W 71 and W 74 tolerance within that range or any location within that range) may be used for both of (1) signal lines 738 and ground line pairs 1160 / 1162 , and (2) signal lines 748 and ground line pairs 1164 / 1166 .

According to some embodiments, the impedance tuning includes or is selecting the lowest amplitude cross point 1712 and point 1717 produced by testing one of signal lines 738 or 748 . Here, for example, as shown in FIG. 17 , an X-axis 1730 location between (e.g., midpoint between, and average of, or another statistical calculation between) I″/J″ which is under point 1712 and a midpoint between I″/J″ and K″/L″ which is under point 1712 may be chosen for width W 71 and width W 74 for one or both of (1) signal lines 738 and ground line pairs 1160 / 1162 , or (2) signal lines 748 and ground line pairs 1164 / 1166 . In some cases, the location between may be used for both of (1) signal lines 738 and ground line pairs 1160 / 1162 , and (2) signal lines 748 and ground line pairs 1164 / 1166 . In some cases, a range of width W 71 and width W 74 around the location between (e.g., a W 71 and W 74 tolerance, such as 5 or 10 percent around either location) may be used for both of (1) signal lines 738 and ground line pairs 1160 / 1162 , and (2) signal lines 748 and ground line pairs 1164 / 1166 . It can be appreciated that various other appropriate locations may be selected based on cross points 1712 and 1717 .

It can be appreciated that such tuning as noted above may be for or represent tuning of a single one of, all of a level of, or all of (1) signal lines 738 and ground line pairs 1160 / 1162 , or (2) signal lines 748 and ground line pairs 1164 / 1166 of device 1550 . It can be appreciated that such tuning as noted above may be represent by curves different than the convex curves 1710 - 1711 and 1715 - 1716 shown in FIG. 17 , such as where the selected width W 71 /width W 74 along axis 1730 is selected to be at the highest point of the different curve along the vertical axis 1720 .

In some cases, this impedance tuning provides (e.g., by determining or identifying a range of or selected target width W 71 and width W 74 for both of (1) signal lines 738 and ground line pairs 1160 / 1162 , or (2) signal lines 748 and ground line pairs 1164 / 1166 ): (1) the best channel performance for lines 738 and 748 (e.g., having length L 7 p ; width W 71 ; width W 74 , pitch PW 2 between the line and a horizontally adjacent horizontal data signal transmission line of device 1550 ; and height H 74 between the line and a vertically adjacent grounding line (or isolation plane) of device 1550 ), (2) electrical isolation of horizontal data signal transmission lines (e.g., signal lines 738 and 748 ) that are single line impedance tuned in the routing segment of device 1550 along the channel (e.g., signal lines 738 or 748 along length L 7 p ), and (3) minimized impedance discontinuity and crosstalk between vertically adjacent and horizontally adjacent ones of signal lines 738 or 748 of device 1550 .

In some cases, the tuning above includes separately tuning lines 738 and 748 of interposer 1506 , patch 1504 and package 1510 . In some cases, it includes separately tuning lines 738 and 748 of interposer 1506 , patch 1504 or package 1510 . In some cases, the tuning above includes tuning lines 738 and 748 of interposer 1506 are tuned, but the signal lines of patch 1504 and package 1510 are not. In some cases, the width W 71 and width W 74 of interposer 1506 are determined by tuning as noted above; and the width W 71 and width W 74 of patch 1504 and package 1510 are determined based on other factors, or design parameters that do not include the tuning noted above.

FIG. 18 is a flow chart illustrating a process for forming a combined horizontal ground isolation planes and ground isolation coaxial lines separated data signal line package, according to embodiments described herein. FIG. 18 shows process 1800 which may be a process for forming embodiments described herein of package 1550 of any of FIGS. 15-19 . In some cases, process 1800 is a process for forming a ground isolated horizontal data signal transmission line package device that has ground isolation planes separating vertically adjacent levels of horizontal data signal receive and transmit lines; and ground isolation “coaxial” lines separating vertically adjacent and horizontally adjacent ones of horizontal data signal receive and transmit lines.

Process 1800 begins at optional block 1810 at which a first (e.g., lower) interconnect level Lo of a package device is formed, having a first type (e.g., RX or TX) of package device conductor material horizontal data signal transmission lines disposed between pairs of horizontally adjacent first ground isolation lines of the first interconnect level Lo. Block 1810 may also include forming first (e.g., lower) level Lo to have package device non-conductive material portions of the first interconnect level Lo disposed (e.g., horizontally adjacent) between each of the first type (e.g., RX or TX) of package device conductor material horizontal data signal receive transmission lines and each of the first ground isolation lines of the first interconnect level Lo.

Block 1810 may also include forming the first (e.g., lower) interconnect level Lo of the package device with a first level package device non-conductive material layer formed on (e.g., touching) or over a layer having the first type (e.g., RX or TX) of package device horizontal data signal lines, the first ground isolation lines, and the non-conductive material portions of the first interconnect level Lo.

In some cases, block 1810 includes forming non-conductive material layer 703 a of the first (e.g., lower) interconnect level Lo (e.g., layer 1230 ) on (e.g., touching) or over a layer (e.g., layer 1232 ) having the first type TX horizontal data signal lines 748 , first ground isolation lines 1164 , and non-conductive material portions 703 b of first interconnect level Lo.

In some cases, block 1810 may only include forming lower layer 1232 of level Lo with first type of data TX signal 748 lines disposed horizontally between dielectric material portions 703 b which are disposed between horizontally adjacent first ground isolation lines 1164 of the first interconnect level Lo; and then forming upper layer 1230 of or having dielectric material onto layer 1232 .

A first example embodiment of block 1810 may include (e.g., prior to forming the upper layer 1230 ), forming a mask (e.g., DFR, not shown) over a top surface of an upper layer 1240 (e.g., of ajinomoto build up film (ABF)), the mask having (1) first openings over layer 1240 in which to form the first type of data TX signal 748 lines of layer 1232 and (2) second openings over layer 1240 in which to form the horizontally adjacent first ground isolation lines 1164 . In some cases, the first openings may be horizontally open to and in communication with different, third openings in the mask over layer 1240 in which data TX signal contacts or data TX signal via contacts will be formed. In some cases, the second openings may be horizontally open to and in communication with fourth openings in the mask over layer 1240 in which ground signal contacts or via contacts will be formed.

Some of these cases may include electroless plating of a seed layer of the conductor material over layer 1240 , prior to forming the masks layer. In this case, block 1810 may then include simultaneously forming conductive material (e.g., plating on the exposed seed layer of the openings) to form the data TX signal 748 lines and isolation lines 1164 of layer 1232 in the first and second openings (and optionally the data TX signal or via contacts in the third openings; and the ground signal contacts or via contacts in the fourth openings of layer 1232 ).

In some of these cases, simultaneously forming the conductive material may include forming that conductive material of all of data TX signal 748 lines and isolation lines 1164 of layer 1232 (and optionally all of the data TX signal or via contacts; and the ground signal contacts or via contacts of layer 1232 ) during the same process, deposition or growth of that conductive material in the first and second (and optionally third and fourth) openings. In some cases, simultaneously forming the conductive material includes electrolytic plating of conductor material in the first and second (and optionally third and fourth) openings (e.g., on the electroless plating of seed layer).

In some cases of these, after simultaneously forming the conductive material, the mask (e.g., DFR) is removed. This removal may also include removing the seed layer from between the openings. Then dielectric material 703 b (e.g., of ajinomoto build up film (ABF)) may be deposited where the mask was removed. In some cases, forming the mask includes forming a blanket layer of mask material and etching the blanket layer to form the first (and optionally second) openings.

Next, at block 1820 a second (e.g., middle) level Lx of the package device is formed over or onto (e.g., touching) level Lo; level Lx having a conductor material (e.g., pure conductor or metal) ground isolation plane vertically separating the first type (e.g., RX or TX) of package device conductor material horizontal data signal transmission lines of the first level Lo, from a second type (e.g., TX or RX; the opposite of the first type RX or TX, respectively) of package device conductor material horizontal data signal transmission lines (e.g., a second type of data signal lines or traces, such as TX or RX data signal lines disposed between package device non-conductive material portions) of vertically adjacent level Ln that is to be formed above level Lo (and above level Lx).

In some cases, block 1820 may only include forming lower layer 816 of level Lx having a conductor material ground isolation plane 762 onto upper layer 1230 of level Lo; and forming upper layer 1515 of level Lx of dielectric material layer 703 a . In some cases, block 1820 includes first forming lower layer 816 onto layer 1230 (e.g., as noted above), then forming upper layer 1515 of or having dielectric material 703 a onto layer 816 .

A first example embodiment of block 1820 may include (e.g., prior to forming the upper layer 1515 ), forming a mask (e.g., DFR, not shown) over a top surface of upper layer 1230 (e.g., of ajinomoto build up film (ABF) of level Lo, the mask having (1) a first opening over layer 1230 in which to form isolation plane 762 of layer 816 . In some cases, the first opening may be horizontally open to and in communication with different, second openings in the mask over layer 1230 in which ground contacts or ground vial contacts will be formed. Some of these cases may include electroless plating of a seed layer of the conductor material over layer 1230 , prior to forming the masks layer.

In this case, block 1820 may then include simultaneously forming conductive material (e.g., plating on the exposed seed layer of the openings) to form the isolation plane 762 of layer 816 in the first openings (and optionally the ground contacts or ground vial contacts in the second openings of layer 816 ).

In some of these cases, simultaneously forming the conductive material may include forming that conductive material of all of isolation plane 762 of layer 816 (and optionally all of the ground contacts or ground vial contacts in the second openings of layer 816 ) during the same process, deposition or growth of that conductive material in the first (and optionally second) openings. In some cases, simultaneously forming the conductive material includes electrolytic plating of conductor material in the first (and optionally second) openings (e.g., on the electroless plating of seed layer).

In some cases of these, after simultaneously forming the conductive material, the mask is removed. This removal may also include removing the seed layer from between the openings. Then dielectric material (e.g., of ajinomoto build up film (ABF)) may be deposited where the mask was removed. In some cases, forming the mask includes forming a blanket layer of mask material and etching the blanket layer to form the first (and optionally second) openings.

Next, at block 1830 a third (e.g., upper) interconnect level Ln of the package device is formed over or onto (e.g., touching) level Lx; level Ln having a second type (e.g., TX or RX; the opposite of the first type RX or TX, respectively) of package device conductor material horizontal data signal transmission lines disposed between pairs of horizontally adjacent second ground isolation lines of the second interconnect level Ln. In some cases, block 1830 includes forming the third level so that the second type of transmission lines of third level Ln are horizontally offset to be directly above the first ground isolation lines of the first interconnect level Lo. Block 1830 may also include forming third level Ln to have package device non-conductive material portions of level Ln disposed (e.g., horizontally adjacent) between each of the second type (e.g., TX or RX) of package device conductor material horizontal data signal transmission lines and each of the second ground isolation lines of level Ln.

Block 1830 may also include forming level Ln of the package device with a third level package device non-conductive material layer formed on (e.g., touching) or over a layer having the second type (e.g., TX or RX) of package device horizontal data signal lines, the second ground isolation lines, and the non-conductive material portions of level Ln.

In some cases, block 1830 includes forming non-conductive material layer 703 a of the third interconnect level Ln (e.g., layer 1220 ) on (e.g., touching) or over a layer (e.g., layer 1222 ) having the second type RX horizontal data signal lines 738 , second ground isolation lines 1162 , and non-conductive material portions 703 b of second interconnect level Ln of package device 1550 .

In some cases, block 1830 may only include forming lower layer 1222 of level Ln with second type of data RX signal 738 lines disposed horizontally between dielectric material portions 703 b which are disposed between horizontally adjacent second ground isolation lines 1162 of the second interconnect level Ln; and then forming upper layer 1220 of or having dielectric material onto layer 1222 .

A first example embodiment of block 1830 may include (e.g., prior to forming the upper layer 1220 ), forming a mask (e.g., DFR, not shown) over a top surface of upper layer 1515 (e.g., of ajinomoto build up film (ABF) of level Lx, the mask having (1) first openings over layer 1515 in which to form the second type of data RX signal 738 lines of layer 1222 and (2) second openings over layer 1515 in which to form the horizontally adjacent second ground isolation lines 1162 . In some cases, the first openings may be horizontally open to and in communication with different, third openings in the mask over layer 1515 in which data RX signal contacts or via contacts will be formed. In some cases, the second openings may be horizontally open to and in communication with fourth openings in the mask over layer 1515 in which ground signal contacts or via contacts will be formed.

Some of these cases may include electroless plating of a seed layer of the conductor material over layer 1515 , prior to forming the masks layer. In this case, block 1830 may then include simultaneously forming conductive material (e.g., plating on the exposed seed layer of the openings) to form the second type of data RX signal 738 and isolation lines 1162 of layer 1222 in the first and second openings (and optionally the data RX signal or via contacts in the third openings; and the ground signal contacts or via contacts in the fourth openings of layer 1222 ).

In some of these cases, simultaneously forming the conductive material may include forming that conductive material of all of second type of data RX signal 738 and isolation lines 1162 of layer 1222 (and optionally all of the data RX signal or via contacts; and the ground signal contacts or via contacts of layer 1222 ) during the same process, deposition or growth of that conductive material in the first and second (and optionally third and fourth) openings. In some cases, simultaneously forming the conductive material includes electrolytic plating of conductor material in the first and second (and optionally third and fourth) openings (e.g., on the electroless plating of seed layer).

In some cases of these, after simultaneously forming the conductive material, the mask (e.g., DFR) is removed. This removal may also include removing the seed layer from between the openings. Then dielectric material 703 b (e.g., of ajinomoto build up film (ABF)) may be deposited where the mask was removed. In some cases, forming the mask includes forming a blanket layer of mask material and etching the blanket layer to form the first (and optionally second) openings.

In some performances of process 1800 , optional block 1810 is performed twice, once, first, to form a “zero” (e.g., lowest; “zero” indicating below the first level Lo) level Lq of the package device, and then repeated to form level Lo. The first performance of block 1810 forms a zero (e.g., lowest) interconnect level Lq of a package device, prior to forming level Lo, where level Lq is formed having the first type (e.g., RX or TX) of package device conductor material horizontal data signal transmission lines disposed between pairs of horizontally adjacent zero ground isolation lines of level Lq; where the first type of transmission lines of level Lq are horizontally offset to be directly below the first ground isolation lines of level Lo; and where the first and zero ground isolation lines and the ground isolation plane (e.g., of the lowest, lower and middle levels) coaxially surround each of the first type of data signal transmission lines of the first level Lo.

This first performance of block 1810 may also include forming level Lq to have package device non-conductive material portions of level Lq disposed (e.g., horizontally adjacent) between each of the first type (e.g., RX or TX) of package device conductor material horizontal data signal receive transmission lines and each of the zero ground isolation lines of level Lq.

This first performance of block 1810 may also include forming level Lq of the package device with a zero level package device non-conductive material layer formed on (e.g., touching) or over a layer having the first type (e.g., RX or TX) of package device horizontal data signal lines, the zero ground isolation lines, and the non-conductive material portions of level Lq.

In some cases, this first performance of block 1810 includes forming non-conductive material layer 703 a of the first (e.g., lower) interconnect level Lq (e.g., layer 1240 ) on (e.g., touching) or over a layer (e.g., layer 1242 ) having the first type TX horizontal data signal lines 748 , zero ground isolation lines 1166 , and non-conductive material portions 703 b of level Lq.

In some performances of process 1800 , block 1830 is performed twice, once, first, to form second level Ln, and then repeated to form third (e.g., uppermost or top) level Lm of the package device. The repeat or second performance of block 1830 forms a third (e.g., uppermost) interconnect level Lm of a package device, after forming level Ln, where level Lm is formed having the second type (e.g., TX or RX) of package device conductor material horizontal data signal transmission lines disposed between pairs of horizontally adjacent third ground isolation lines of level Lm; where the second type of transmission lines of level Lm are horizontally offset to be directly above the second ground isolation lines of level Ln; and where the second and third ground isolation lines and the ground isolation plane (e.g., of the uppermost, upper and middle levels) coaxially surround each of the second type of data signal transmission lines of the second level Ln.

This second performance of block 1830 may also include forming level Lm to have package device non-conductive material portions of level Lm disposed (e.g., horizontally adjacent) between each of the second type (e.g., TX or RX) of package device conductor material horizontal data signal receive transmission lines and each of the third ground isolation lines of level Lm.

This second performance of block 1830 may also include forming level Lm of the package device with a third level package device non-conductive material layer formed on (e.g., touching) or over a layer having the second type (e.g., TX or RX) of package device horizontal data signal lines, the third ground isolation lines, and the non-conductive material portions of level L.

In some cases, this second performance of block 1830 includes forming non-conductive material layer 703 a of level Lm (e.g., layer 1210 ) on (e.g., touching) or over a layer (e.g., layer 1212 ) having the second type RX horizontal data signal lines 738 , third ground isolation lines 1160 , and non-conductive material portions 703 b of level Lm.

In some cases of process 1800 , block 1810 is performed twice as noted above, and then block 1820 is performed once, but block 1830 is not performed. In some cases of process 1800 , block 1810 is not performed, block 1820 is performed once, and then block 1830 is performed twice as noted above. In some cases of process 1800 , block 1810 is performed twice as noted above, and then block 1820 is performed once, and then block 1830 is performed twice as noted above.

Next, at return arrow 1840 , process 1800 may continue by returning to another performance of blocks 1810 , 1820 and 1830 as noted above to form more levels of signal lines located between ground isolation lines, and levels having ground planes. Process 1800 may continue this way until a predetermined or sufficient number of levels or performances of processes 1800 are completed to form a desired package device 1550 . In some cases, it may repeat 3 to 10 times.

Next, in a first example case of process 1800 , block 1810 may only include forming layer 1232 as described herein; block 1820 may only include forming layer 816 as described herein; and block 1830 may only include forming layer 1222 as described herein. In a second example case, block 1810 may include forming layers 1230 and 1232 as described herein; block 1820 may include forming layers 1510 and 816 as described herein; and block 1830 may include forming layers 1220 and 1222 as described herein.

It can be appreciated that although FIGS. 15-19 show and corresponding descriptions describe for level Lm having RX signal lines, level Ln having RX signal lines, level Lo having TX signal lines, and level Lq having TX signal lines, the figures and descriptions also apply to embodiments where the TX and RX of those signal lines may be reversed. It can be appreciated that although FIGS. 15-19 show and corresponding descriptions describe embodiments for level Lm having RX signal lines, level Ln having RX signal lines, level Lo having TX signal lines, and level Lq having TX signal lines, the figures and descriptions also apply to embodiments where there are only one level of vertically adjacent RX and TX signals (e.g., level Ln is TX and level Lo is RX signals), each level having ground isolation lines and offset as noted herein (e.g., such as in FIGS. 7-10 ). For example, level Lm may be RX signal lines, while level Ln has TX signal lines, level Lo may be RX signal lines, while level Lq has TX signal lines. In some cases, the TX and RX of those signal lines of that example may be reversed. In some embodiments, there may be three levels of vertically adjacent RX and TX signals, each level having ground isolation lines and offset as noted herein.

It can be appreciated that although FIGS. 15-19 show and corresponding descriptions describe embodiments for levels having RX signal lines and TX signal lines, the figures and descriptions also apply to embodiments where other types of information, clock, timing, alternating current (AC) or data signals can be on those signal lines.

In some cases, levels Lj-Ll of FIGS. 7-10 , or levels Lm-Lq of FIGS. 11-14 , or levels Lm-Ly of FIGS. 15-19 may be levels within a package device (e.g., package device 750 , 1150 or 1550 ) that are not the top or topmost 3, 5 or 6 levels. In some cases, these levels may be levels within a package device that are not the bottom or bottommost 3, 5 or 6 levels. In some cases they are not either. In some cases, these levels may be levels within a package device that are not considered to be a “top” or “bottom” layer such as an exposed layer (e.g., a final build-up (BU) layer, BGA, LGA, or die-backend-like layer) to which an IC chip (e.g., such as microprocessor, coprocessor, graphics processor, memory chip, modem chip, or other microelectronic chip devices), a socket, an interposer, a motherboard, or another next-level component will be mounted or directly attached. In some cases, these levels may be levels within a package device where horizontal signal transmission lines or traces are known to exist or extend horizontally form one to another horizontal location. In some cases, these levels may be levels within a package device that are between 3 and 30 levels from the top (e.g., exposed) level of the device. In some cases, these levels may be levels within a package device that are below a ground plane or a level 5 levels from the top (e.g., exposed) level of the device.

It can be appreciated that there may be additional levels above and/or below levels Lj-Ll of FIGS. 7-10 , or levels Lm-Lq of FIGS. 11-14 , or levels Lm-Ly of FIGS. 15-19 . Also, more data signal lines may exist in these levels, such as additional lines 738 and 748 that are beside the ground isolation lines and have non-conductor portions between the additional lines as described.

In some embodiments, the level L 5 from the top will include or be a solid ground plane 760 or a ground plane formed onto level Lm of FIGS. 11-14 . In some embodiments, level L 6 , below level L 5 will be a solid planar ground layer 760 or a ground plane formed onto level Lm of FIGS. 11-14 .

In some cases, chip 702 , chip 708 and chip 709 may each represent an integrated circuit (IC) chip or “die” such as a computer processing unit (CPU), microprocessor, coprocessor, graphics processor, memory chip, modem chip, or other microelectronic chip device. In some cases, chip 702 is an integrated circuit (IC) chip computer processing unit (CPU), microprocessor, or coprocessor. In some cases, chip 708 is an integrated circuit (IC) chip that is a coprocessor, graphics processor, memory chip, fabric controller chip, network interface chip, switch chip, accelerator chip, field programmable gate array (FPGA) chip, or application-specific integrated circuit (ASIC) chip device. In some cases, chip 709 is an integrated circuit (IC) chip coprocessor, graphics processor, memory chip, modem chip, communication output signal chip device, fabric controller chip, network interface chip, switch chip, accelerator chip, field programmable gate array (FPGA) chip, or application-specific integrated circuit (ASIC) chip.

For some embodiments, chips 702 , 708 and/or 709 are not included. Some embodiments include only patch 704 , interposer 706 and package 710 as described herein. Some embodiments include only patch 1104 , interposer 1106 and package 1110 as described herein. Some embodiments include only patch 1504 , interposer 1506 and package 1510 as described herein.

For some embodiments, only patch 704 , 1104 or 1504 is included (e.g., chip 702 and interposer 706 are not included). For some embodiments, only interposer 706 , 1106 or 1506 is included (e.g., patch 704 and package 710 , 1110 or 1510 are not included). For some embodiments, only package 710 , 1110 or 1510 is included (e.g., chips 708 and 709 ; and interposer 706 , 1106 or 1506 are not included). Some embodiments include only package device 750 , 1150 , or 1550 as described herein. For some embodiments, only package device 750 is included. For some embodiments, only package device 1150 is included. For some embodiments, only package device 1550 is included.

In some cases, a pitch width (PW 1 or PW 2 is defined along width W 73 ) between adjacent (a signal line and the signal lined immediately to the left or right of that signal line) data signal transmission lines of FIGS. 1-12 may be between 100 and 150 um. In some cases it is between 50 and 300 um. This pitch may represent a distance (e.g., average or design rule) between the center point of two adjacent transmission lines. In some cases, it is approximately 110 micrometers (110×E-6 meter—“um”). In some cases, it is between 100 and 120 micrometers (um). In some cases, it is between 60 and 200 micrometers.

It is also considered that levels above and below levels Lj-Ll of FIGS. 7-10 , or levels Lm-Lq of FIGS. 11-14 , or levels Lm-Ly of FIGS. 15-19 may include various interconnect layers, packaging layers, conductive features (e.g., electronic devices, interconnects, layers having conductive traces, layers having conductive vias), layers having dielectric material and other layers as known in the industry for a semiconductor package device. In some cases, the package may be cored or coreless. In some cases, the package includes features formed according to a standard package substrate formation processes and tools such as those that include or use: lamination of dielectric layers such as ajinomoto build up films (ABF), laser or mechanical drilling to form vias in the dielectric films, lamination and photolithographic patterning of dry film resist (DFR), plating of conductive traces (CT) such as copper (Cu) traces, and other build-up layer and surface finish processes to form layers of electronic conductive traces, electronic conductive vias and dielectric material on one or both surfaces (e.g., top and bottom surfaces) of a substrate panel or peelable core panel. The substrate may be a substrate used in an electronic package device or a microprocessor package.

In some cases, any or all of levels Lj-Ll of FIGS. 7-10 , or levels Lm-Lq of FIGS. 11-14 , or levels Lm-Ly of FIGS. 15-19 may also include such structures noted above for package 150 , 1150 or 1550 , thought not shown in FIGS. 1-12 . In some cases, the contacts and/or traces of these levels are electrically connected to (e.g., physically attached to or formed onto) the conductive structures noted above for package 150 , 1150 or 1550 .

Devices 150 , 1150 or 1550 may have features having standard package pitch as known for a semiconductor die package, chip package; or for another device (e.g., interface, PCB, or interposer) typically connecting a die (e.g., IC, chip, processor, or central processing unit) to a socket, a motherboard, or another next-level component. In some embodiments, the pitch is determined by a standard package design rule (DR) or chip package as known. In some cases, that pitch is a line spacing (e.g., the actual value of the line widths and spaces between lines on the layers) or design rules (DR) of a feature (e.g., conductive contact, or trace) that is between 9 and 12 micrometers.

Lines 738 , 748 ; planes 760 , 762 and 764 ; and lines 1160 , 1162 , 1164 and 1166 may be formed within their described width, length and height of solid conductive material. The conductive material may be a pure conductor (e.g., a metal or pure conductive material). Such material may be or include copper (Cu), gold, silver, bronze, nickel, silver, aluminum, molybdenum, an alloy, or the like as known for such a contact. In some cases, they are all solid copper.

In some cases, the formation of lines 738 , 748 ; planes 760 , 762 and 764 ; and lines 1160 , 1162 , 1164 and 1166 (all of which, together, may be described below as “planes and lines” or “conductor material features”) may be by processes know for typical chip package manufacturing processes (e.g., known in the industry for a semiconductor package device). In some cases, these conductor material features are formed according to a standard package substrate formation processes and tools such as those that include or use: lamination of dielectric layers such as ajinomoto build up films (ABF), curing, laser or mechanical drilling to form vias in the dielectric films, desmear of seed conductor material, lamination and photolithographic patterning of dry film resist (DFR), plating of conductive traces (CT) such as copper (Cu) traces, and other build-up layer and surface finish processes to form layers of electronic conductive traces, electronic conductive vias and dielectric material on one or both surfaces (e.g., top and bottom surfaces) of a substrate panel or peelable core panel. The substrate may be a substrate used in an electronic package device or a microprocessor package.

In some cases, these conductor material features are formed as a blanket layer of conductor material (e.g., a pure conductive material) that is masked and etched to form openings where dielectric material (e.g., 703 , such as 703 a - 703 i ) will be deposited, grown or formed (and leave portions of the conductor material where the contacts, traces and webbing are now formed). Alternatively, the conductor material may be a layer (e.g., portions of a blanket layer) that is formed in openings existing through a patterned mask (e.g., ABF and/or dry film resist), and the mask then removed (e.g., dissolved or burned) to form the lines and planes (e.g., as conductor material remaining in the openings after removal of the mask). Such forming of the planes and lines may include plating or growing the conductor material such as an electrolytic layer of metal or conductor grown from a seed layer of electroless metal or conductor to form the planes and lines.

Layers of dielectric 703 (e.g., layers 703 a - 703 i ) may each be a height H 72 , H 73 or H 74 for a layer of solid non-conductive material. The dielectric material may be a pure non-conductor (e.g., a pure non-conductive material). Such material may be or include ajinomoto build up films (ABF), cured resin, dry film lamination, porcelain, glass, plastic, or the like as known for such a dielectric. In some cases it is ajinomoto build up films (ABF) and/or dry film lamination.

In some cases, the dielectric may be a blanket layer of dielectric material (e.g., a non-conductive insulator material) that is drilled, or masked and etched to form openings where the contacts, traces and webbing are deposited, grown or formed (e.g., the remaining material is “non-conductor material features”) by processes know for typical chip package manufacturing processes (e.g., known in the industry for a semiconductor package device). In some cases, these non-conductor material features are formed according to a standard package substrate formation processes and tools such as those that include or use: lamination of dielectric layers such as ajinomoto build up films (ABF), curing, laser or mechanical drilling to form vias in the dielectric films, desmear of seed conductor material, lamination and photolithographic patterning of dry film resist (DFR), plating of conductive traces (CT) such as copper (Cu) traces, and other build-up layer and surface finish processes to form layers of electronic conductive traces, electronic conductive vias and dielectric material on one or both surfaces (e.g., top and bottom surfaces) of a substrate panel or peelable core panel. The substrate may be a substrate used in an electronic package device or a microprocessor package.

Alternatively, the dielectric may be a layer that is formed on a patterned mask, and the mask then removed (e.g., dissolved or burned) to form openings where the contacts, traces, lines and planes are deposited, grown or formed. Such forming of the dielectric layer, or portions may include or be depositing the dielectric material such as by vacuum lamination of ABF, or dry film lamination such as from or on a lower surface of a dielectric material (e.g., that may be the same type of material or a different type of dielectric material) to form the layer or portions. In some cases, the dielectric layer, portions of dielectric structure, or openings in dielectric layer may be formed by a process known to form such dielectric of a package or chip package device.

In some cases, any or all of the cross sectional length view shapes of lines 738 and lines 748 (e.g., height H 73 ×width W 71 ) is shown as a square or rectangular shape (e.g., see FIGS. 2A, 6A and 10A ) it is considered that these shapes may instead be or represent a circle (e.g., having a diameter of H 73 or W 71 ); or an oval, a triangle, a rhombus, a trapezoid, or a polygon (e.g., having a maximum height of H 73 and maximum width of W 71 ). Also, in some cases, any or all of the cross sectional length view shapes of portions 703 b , 703 e and 703 h of FIG. 8A (e.g., height H 73 ×width W 72 ) is shown as a square or rectangular shape it is considered that these shapes may instead be or represent a circle (e.g., having a diameter of H 73 or W 72 ); or an oval, a triangle, a rhombus, a trapezoid, or a polygon (e.g., having a maximum height of H 73 and maximum width of W 72 ). Next, in some cases, any or all of the cross sectional length view shapes of portions 703 b of FIGS. 6A and 10A (e.g., height H 73 ×width W 75 ) is shown as a square or rectangular shape it is considered that these shapes may instead be or represent a circle (e.g., having a diameter of H 73 or W 75 ); or an oval, a triangle, a rhombus, a trapezoid, or a polygon (e.g., having a maximum height of H 73 and maximum width of W 75 ). Finally, in some cases, any or all of the cross sectional length view shapes of lines 1160 , 1162 , 1164 , and 1166 of FIGS. 6A and 10A (e.g., height H 73 ×width W 74 ) is shown as a square or rectangular shape it is considered that these shapes may instead be or represent a circle (e.g., having a diameter of H 73 or W 74 ); or an oval, a triangle, a rhombus, a trapezoid, or a polygon (e.g., having a maximum height of H 73 and maximum width of W 74 ).

In some cases, embodiments of (e.g., packages, systems and processes for forming) package devices 150 , 1150 and 1550 , such as described for FIGS. 1-12 , provide quicker and more accurate data signal transfer between the two IC's attached to a package by including ground isolation planes; lines; or planes and lines of package devices 150 , 1150 and 1550 that reduce signal line crosstalk, and increase signal line isolation (e.g., see FIGS. 1, 5 and 9 ). In some cases, embodiments of processes for forming package devices 150 , 1150 and 1550 , or embodiments of package devices 150 , 1150 and 1550 provide a package device having better components for providing high frequency transmit (e.g., through lines 748 ) and receive (e.g., through lines 738 ) data signals between horizontal endpoints of those lines (e.g., see FIGS. 1, 5 and 9 ). The components may be better due to the addition of the ground isolation planes; lines; or planes and lines of package devices 150 , 1150 and 1550 .

In some cases, embodiments of processes for forming package devices 150 , 1150 and 1550 , or embodiments of package devices 150 , 1150 and 1550 provide the benefits embodied in computer system architecture features, package devices and interfaces made in high volumes (e.g., see FIGS. 1, 5 and 9 ). In some cases, embodiments of such processes and devices provide all the benefits of solving very high frequency data transfer interconnect problems, such as between two IC chips or die (e.g., where hundreds even thousands of signals between two die need to be routed), or for high frequency data transfer interconnection within a system on a chip (SoC) (e.g., see FIGS. 1, 5 and 9 ). In some cases, embodiments of such processes and devices provide the demanded lower cost high frequency data transfer interconnects solution that is needed across the above segments (e.g., see FIGS. 1, 5 and 9 ). These benefits may be due to the addition of the ground isolation planes; lines; or planes and lines of package devices 150 , 1150 and 1550 .

In addition to this, such processes and devices can provide for direct and local data signal delivery to both chips. In some cases, embodiments of such processes and devices provide communication between two IC chips or board ICs including memory, modem, graphics, and other functionality, directly attached to each other (e.g., see FIGS. 1, 5 and 9 ). These processes and devices provide increased input/output (IO) speed data transfer at lower cost. These provisions and increases may be due to the addition of the conductive material ground isolation planes; lines; or planes and lines of package devices 150 , 1150 and 1550 .

FIG. 19 illustrates a computing device in accordance with one implementation. FIG. 19 illustrates computing device 1900 in accordance with one implementation. Computing device 1900 houses board 1902 . Board 1902 may include a number of components, including but not limited to processor 1904 and at least one communication chip 1906 . Processor 1904 is physically and electrically coupled to board 1902 . In some implementations at least one communication chip 1906 is also physically and electrically coupled to board 1902 . In further implementations, communication chip 1906 is part of processor 1904 .

Depending on its applications, computing device 1900 may include other components that may or may not be physically and electrically coupled to board 1902 . These other components include, but are not limited to, volatile memory (e.g., DRAM), non-volatile memory (e.g., ROM), flash memory, a graphics processor, a digital signal processor, a crypto processor, a chipset, an antenna, a display, a touchscreen display, a touchscreen controller, a battery, an audio codec, a video codec, a power amplifier, a global positioning system (GPS) device, a compass, an accelerometer, a gyroscope, a speaker, a camera, and a mass storage device (such as hard disk drive, compact disk (CD), digital versatile disk (DVD), and so forth).

Communication chip 1906 enables wireless communications for the transfer of data to and from computing device 1900 . The term “wireless” and its derivatives may be used to describe circuits, devices, systems, methods, techniques, communications channels, etc., that may communicate data through the use of modulated electromagnetic radiation through a non-solid medium. The term does not imply that the associated devices do not contain any wires, although in some embodiments they might not. Communication chip 1906 may implement any of a number of wireless standards or protocols, including but not limited to Wi-Fi (IEEE 802.11 family), WiMAX (IEEE 802.16 family), IEEE 802.20, long term evolution (LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE, GSM, GPRS, CDMA, TDMA, DECT, Bluetooth, derivatives thereof, as well as any other wireless protocols that are designated as 3G, 4G, 5G, and beyond. Computing device 1900 may include a plurality of communication chips 1906 . For instance, first communication chip 1906 may be dedicated to shorter range wireless communications such as Wi-Fi and Bluetooth and second communication chip 1906 may be dedicated to longer range wireless communications such as GPS, EDGE, GPRS, CDMA, WiMAX, LTE, Ev-DO, and others.

Processor 1904 of computing device 1900 includes an integrated circuit die packaged within processor 1904 . In some implementations, the integrated circuit die of the processor includes one or more devices, such as transistors or metal interconnects. In some embodiments, the package of the integrated circuit die or processor 1904 includes embodiments of processes for forming package devices 150 , 1150 and 1550 , or embodiments of package devices 150 , 1150 and 1550 as described herein. The term “processor” may refer to any device or portion of a device that processes electronic data from registers and/or memory to transform that electronic data into other electronic data that may be stored in registers and/or memory.

Communication chip 1906 also includes an integrated circuit die packaged within communication chip 1906 . In accordance with another implementation, the integrated circuit die of the communication chip includes one or more devices, such as transistors or metal interconnects. In some embodiments, the package of the integrated circuit die or chip 606 includes embodiments of processes for forming package devices 150 , 1150 and 1550 , or embodiments of package devices 150 , 1150 and 1550 as described herein.

In further implementations, another component housed within computing device 600 may contain an integrated circuit die that includes one or more devices, such as transistors or metal interconnects. In some embodiments, the package of the other integrated circuit die or chip includes embodiments of processes for forming package devices 150 , 1150 and 1550 , or embodiments of package devices 150 , 1150 and 1550 as described herein.

In various implementations, computing device 1900 may be a laptop, a netbook, a notebook, an ultrabook, a smartphone, a tablet, a personal digital assistant (PDA), an ultra mobile PC, a mobile phone, a desktop computer, a server, a printer, a scanner, a monitor, a set-top box, an entertainment control unit, a digital camera, a portable music player, or a digital video recorder. In further implementations, computing device 1900 may be any other electronic device that processes data.

For example, although the descriptions above show only ground isolation planes; lines; or planes and lines in levels Lj-Ll of FIGS. 7-10 , or levels Lm-Lq of FIGS. 11-14 , or levels Lm-Ly of FIGS. 15-19 those descriptions can apply to fewer, more or different ground isolation planes; lines; or planes and lines. Embodiments of fewer such structures may be where only one or two of levels Lj-Ll of FIGS. 7-10 , or levels Lm-Lq of FIGS. 11-14 , or levels Lm-Ly of FIGS. 15-19 exist. Embodiments of more of such structures may be where additional levels of ground isolation planes; lines; or planes and lines similar to levels Lj-Ll of FIGS. 7-10 , or levels Lm-Lq of FIGS. 11-14 , or levels Lm-Ly of FIGS. 15-19 exist in devices 150 , 1150 or 1550 , above or below levels Lj-Ll of FIGS. 7-10 , or levels Lm-Lq of FIGS. 11-14 , or levels Lm-Ly of FIGS. 15-19 . Embodiments of different of such ground isolation planes; lines; or planes and lines may be such as where ones of levels Lj-Ll of FIGS. 7-10 , or levels Lm-Lq of FIGS. 11-14 , or levels Lm-Ly of FIGS. 15-19 replace or are mixed with other levels of levels Lj-Ll of FIGS. 7-10 , or levels Lm-Lq of FIGS. 11-14 , or levels Lm-Ly of FIGS. 15-19 .

FIGS. 20-29 may apply to embodiments of a ground shielding attachment structures and shadow voiding for data signal contacts of package devices; vertical ground shielding structures and shield fencing of vertical data signal interconnects of package devices; and ground shielding for electro optical module connector data signal contacts and contact pins of package devices. Such embodiments of the invention are related in general, to semiconductor device packaging and, in particular, to substrate packages and printed circuit board (PCB) substrates upon which an integrated circuit (IC) chip may be attached, and methods for their manufacture. Such a substrate package device may have vertical data signal transmission interconnects extending through vertical levels of a package device.

Integrated circuit (IC) chips (e.g., “chips”, “dies”, “ICs” or “IC chips”), such as microprocessors, coprocessors, graphics processors and other microelectronic devices often use semiconductor package devices (“packages”) to physically and/or electronically attach the IC chip to a circuit board, such as a motherboard (or motherboard interface). The IC chip (e.g., “die”) is typically mounted within a microelectronic substrate package or package device that, among other functions, enables electrical connections between the die and a socket, a motherboard, or another next-level component. Some examples of such package devices are substrate packages, interposers, and printed circuit board (PCB) substrates upon which integrated circuit (IC) chips or other package devices may be attached.

There is a need in the field for an inexpensive and high throughput process for manufacturing such package devices. In addition, the process could result in a high package device yield and a package device of high mechanical stability. Also needed in the field, is a package device having better components for providing stable and clean power, ground, and high frequency transmit and receive data signals between its top surface and other components of or attached to the package device, such as from between different vertical locations of vertical data signal transmission interconnects extending through vertical levels of a package device.

As integrated circuit (IC) chip or die sizes shrink and interconnect densities increase, physical and electrical connections require better components for providing stable and clean high frequency transmit and receive data signals between different vertical locations of, or a vertical length of, vertical data signal transmission interconnects extending through vertical levels of one package device or two physically attached package devices upon which the IC chip is mounted or is communicating the data signals. Some examples of such package devices are one (or two physically attached) of the following: substrate packages, interposers (e.g., silicon interposers), silicon bridges, organic interposers (e.g., or technology thereof), and printed circuit board (PCB) substrates upon or onto which integrated circuit (IC) chips or other package devices may be attached.

In some cases, an IC chip may be mounted within a package device, such as for “flip chip” bonding or packaging. In some cases, the IC chip may be mounted on one package device, which is also physically and electronically connected to another package device or IC chip, so that the package device can provide data signal transfer between IC chip and other package device, or between the two IC chips. In many cases, any of the package devices must route hundreds or even thousands of high frequency data signals between the IC chip(s) and/or other package devices.

According to some embodiments, it is possible for a vertically ground isolated package device to provide higher frequency and more accurate data signal transfer between an IC chip mounted on a top interconnect level of the package device and (1) lower levels of the package device, (2) a next-level component of the package device, and/or (3) a next-level component or another package device mounted to the bottom of the package device, by including vertical ground isolation structures (e.g., of conductor material) for vertical data signal interconnects of package devices that reduce (e.g., improves or mitigates) vertical data signal interconnect crosstalk, signal type cluster-to-cluster crosstalk and in-cluster signal type crosstalk. Such a package may be described as a “vertically ground isolated package device” (e.g., devices, systems and processes for forming).

In some embodiments, the vertical ground isolation structures may include ground shielding attachment structures for different types of data signal surface contacts of the top interconnect level of vertical data signal interconnects of package devices. The ground shielding attachment structures may include solid conductive material ground isolation shielding attachments such as solder balls or ball grid arrays (BGA) and/or solid conductive material ground isolation shielding surface contacts for the isolation attachments. The ground shielding attachment structures may be located or disposed beside and between the different types of data signal surface contacts that are spread over an area of the top interconnect level of a package device. The different types of data signal surface contacts may include “upper” transmit and receive data signal contacts of a die-bump field (e.g., zone or cluster) or a first level die bump design for soldering to another device; and the ground shielding attachment structures may reduce signal type cluster-to-cluster crosstalk by being between and electrically shielding separate fields of the upper transmit and receive data signal contacts. In some cases, there may be additional lower levels of the package (below the first level) with additional vertical ground isolation structures as described herein (e.g., see FIGS. 24A-28 ).

In some cases, the top interconnect level may be an upper (e.g., top or first) interconnect layer with upper (e.g., top or first) level ground contacts, upper level (e.g., top or first) data signal contacts formed over and connected to via contacts or traces of a lower layer of the same interconnect level.

In some cases, the ground shielding attachment structures may provide a better component for the physical and electrical connections between an IC chip or other package device which is mounted upon or to the vertically ground isolated package device. In some cases, it may increase in the stability and cleanliness of ground, and high frequency transmit and receive data signals transmitted between the data signal contacts on the top surfaces of the package and other components of or attached to the package that are electrically connected to the data signal contacts on the top surface through via contacts to lower level contacts or traces of the package.

In some cases, the data signal contacts, via contacts, and lower level contacts are part of the vertical data signal interconnects of the package device. In some cases, the ground shielding attachment structures may increase the usable frequency of transmit and receive data signals transmitted between the data signal contacts on the top surfaces of the package and other components of or attached to the package, as compared to a package not having the structures. Such an increased frequency may include data signals having a speed of between 7 and 25 gigatransfers per second (GT/s). In some cases, GT/s may refer to a number of operations (e.g., transmission of digital data such as the data signal herein) transferring data that occur in each second in some given data transfer channel such as a channel provided by zone 2002 or 2004 ; or may refer to a sample rate, i.e. the number of data samples captured per second, each sample normally occurring at the clock edge. 1 GT/s is 10 9 or one billion transfers per second.

In some cases, the ground shielding attachment structures improve (e.g., reduce) crosstalk (e.g., as compared to the same package but without any of the structures) from very low frequency transfer such as from a speed of 50 megatransfers per second (MT/s) to greater than 40 GT/s (or up to between 40 and 50 GT/s).

FIG. 20A is a schematic top perspective view of a semiconductor package device upon which at least one integrated circuit (IC) chip (e.g., “die”) or other package device may be attached. FIG. 20A shows package device 2000 having a first interconnect level L 1 (with the number “1”, not the letter “1”) with upper layer 2110 having one row of upper (e.g., top or first) layer ground isolation contacts 2020 , having upper layer receive data signal contacts 2030 and having upper layer transmit data signal contacts 2040 surrounded by dielectric layer 2003 such as an electrically non-conductive or insulating material. Level L 1 (or upper layer 2110 ) may be considered to “top” layer such as a top, topmost or exposed layer (e.g., a final build-up (BU) layer, BGA, LGA, or die-backend-like layer) to which an IC chip (e.g., such as microprocessor, coprocessor, graphics processor, memory chip, modem chip, fabric controller chip, network interface chip, switch chip, accelerator chip, field programmable gate array (FPGA) chip, application-specific integrated circuit (ASIC) chip device, communication output signal chip device, or other microelectronic chip devices), a socket, an interposer, a motherboard, another package device or another next-level component will be mounted or directly attached.

In some cases, device 2000 may represent a substrate package, an interposer, a printed circuit board (PCB), a PCB an interposer, a “package”, a package device, a socket, an interposer, a motherboard, or another substrate upon which integrated circuit (IC) chips or other package devices may be attached (e.g., such as microprocessor, coprocessor, graphics processor, memory chip, modem chip, fabric controller chip, network interface chip, switch chip, accelerator chip, field programmable gate array (FPGA) chip, application-specific integrated circuit (ASIC) chip device, communication output signal chip device, or other microelectronic chip devices).

FIG. 20A shows package device 2000 having top surface 2006 , such as a surface of dielectric 2003 , upon or in which are formed (e.g., disposed) one row of grounding contacts 2020 , receive signal contacts 2030 and transmit contacts 2040 . Ground contacts 2020 are shown in locations along length LE 201 in fifth row 2082 of zone 2007 .

Receive signal contacts 2030 are shown having pattern 2005 in zone 2002 . Zone 2002 has width WE 201 and length LE 201 . Pattern 2005 may include having receive signal contacts 2030 in first row 2074 , second row 2076 , third row 2078 , and fourth row 2080 that are horizontally equidistant from each other in zone 2002 . Pattern 2005 may include having the receive signal contacts 2030 in rows 2076 and 2080 lengthwise offset (e.g., along LE 201 ) below those of rows 2074 and 2078 by one half pitch length PL 20 . In some cases, pattern 2005 may include having contacts 2030 in rows 2076 and 2080 lengthwise offset (e.g., along LE 201 ) to be lengthwise between those of rows 2074 and 2078 along pitch length PL 20 .

In some cases, zone 2002 may be described as a receive or “RX” signal cluster formed in a 4-row deep die-bump pattern 2005 . In some cases, zone 2002 and pattern 2005 includes only contacts 2030 , but no other contacts (e.g., none of contacts 2020 or 2040 ). Zone 2002 and pattern 2005 is shown having 18 vertical data signal interconnect stacks, each with exposed data signal upper contact 2030 that may be formed over or onto a data signal via contact of level L 1 . It can be appreciated that there may be more or fewer of stacks and contacts 2030 . In some cases there may be 20 stacks and contacts 2030 in zone 2002 . In some cases 8, 10, 12, 16, 32 or 64.

Transmit signal contacts 2040 are shown having pattern 2008 in zone 2004 . Zone 2004 has width WE 201 and length LE 201 . Pattern 2008 may include having transmit signal contacts 2040 in sixth row 2084 , seventh row 2086 , eighth row 2088 , and ninth row 2090 that are horizontally equidistant from each other in zone 2004 . Pattern 2008 may include having the transmit signal contacts 2040 in rows 2086 and 2090 lengthwise offset (e.g., along LE 201 ) below those of rows 2084 and 2088 by one half pitch length PL 20 . In some cases, pattern 2008 may include having contacts 2040 in rows 2086 and 2090 lengthwise offset (e.g., along LE 201 ) to be lengthwise between those of rows 2084 and 2088 along pitch length PL 20 .

In some cases, zone 2004 may be described as a receive or “TX” signal cluster formed in a 4-row deep die-bump pattern 2008 . In some cases, zone 2004 and pattern 2008 includes only contacts 2040 , but no other contacts (e.g., none of contacts 2020 or 2030 ). Zone 2004 and pattern 2008 is shown having 18 vertical data signal interconnect stacks, each with exposed data signal upper contact 2040 that may be formed over or onto a data signal via contact of level L 1 . It can be appreciated that there may be more or fewer of stacks and contacts 2040 in zone 2004 and pattern 2008 . In some cases there may be 20 stacks and contacts 2040 . In some cases 8, 10, 12, 16, 32 or 64.

Ground signal contacts 2020 are shown having pattern 2010 in zone 2007 . Zone 2007 has width WE 203 and length LE 201 . Pattern 2010 may include having ground signal contacts 2020 in fifth row 2082 in zone 2007 . In some cases, zone 2007 may be described as a ground signal cluster formed in a 1-row deep die-bump pattern 2010 . In some cases, zone 2007 and pattern 2010 (or zone 2009 and pattern 2011 of FIGS. 20B and 21B ) includes only contacts 2020 , but no other contacts (e.g., none of contacts 2030 or 2040 ). Pattern 2010 may include having one of contacts 2020 (one of row 2082 ) located directly between (e.g., side by side, horizontally adjacent, or widthwise adjacent with respect to width WE 203 of FIGS. 20A-21A ) each of contacts 2030 and a widthwise adjacent one of contacts 2040 (e.g., side by side, or widthwise adjacent with respect to width WE 203 of FIGS. 20A-21A ). Zone 2007 and pattern 2010 may have 9 vertical ground isolation interconnect stacks, each with an ground isolation upper contact 2020 that may be formed over or onto a ground isolation via contact of level L 1 . It can be appreciated that there may be more or fewer than 9 of stacks and contacts 2020 in zone 2007 and pattern 2010 . In some cases there may be 10 stacks and contacts 2020 . In some cases 4, 5, 6, 8, 16 or 32.

Zone 2002 may be described as a four row wide zone of receive contacts, such as forming pattern 2005 . Zone 2004 may be described as a four row wide zone of transmit contacts, such as forming pattern 2008 . Row 2082 may be described as a one row wide ground isolation zone 2007 located or formed between zone 2002 and zone 2004 , such as forming pattern 2010 . Zone 2007 may have side 2081 widthwise adjacent to (e.g., along width WE 203 ) or facing zone 2002 and opposite side 2083 (e.g., opposite from side 2081 ) widthwise adjacent to (e.g., along width WE 203 ) or facing zone 2004 . It can be appreciated that although zone 2002 and 2004 are shown with the same width and length, they may have different widths and/or lengths.

FIG. 21A is a schematic cross-sectional side view of the package of FIG. 20A showing solder bumps formed on upper (e.g., top or first) layer ground isolation contacts 2020 of zone 2007 , upper layer receive data signal contacts 2030 and upper layer transmit data signal contacts 2040 . In level L 1 (and similarly for some other levels) device 2000 has contacts 2030 of zone 2002 formed onto or physically attached to a top surface of via contacts 2032 , ground isolation contacts 2020 of zone 2007 formed onto or physically attached to a top surface of via contacts 2022 , and contacts 2040 of zone 2004 formed onto or physically attached to a top surface of via contacts 2042 .

FIG. 21A shows top or topmost (e.g., first level) interconnect level L 1 (having top layer 2110 and bottom layer 2112 ) of package device 2000 formed over second level interconnect level L 2 , which is formed over third interconnect level L 3 , which is formed over other interconnect levels of the device. Device 2000 layer 2110 has dielectric 2003 , ground isolation contacts 2020 of zone 2007 , contacts 2030 of zone 2002 and contacts 2040 of zone 2004 .

Some embodiments of device 2000 (e.g., FIG. 21A ) have solder bumps 2034 formed onto or physically attached to a top surface of contacts 2030 , solder bump 2024 formed onto or physically attached to a top surface of contacts 2020 , and solder bumps 2044 formed onto or physically attached to a top surface of contacts 2040 of layer 2110 . Some embodiments of device 2000 may not have (e.g., not yet have) solder bumps 2034 formed onto or physically attached to a top surface of contacts 2030 , solder bump 2024 formed onto or physically attached to a top surface of contacts 2020 , or solder bumps 2044 formed onto or physically attached to a top surface of contacts 2040 of layer 2110 .

The exact size of WE 201 , WE 203 , WE 204 and LE 201 may depend on number of contacts employed within each zone (e.g., number of contacts 2030 in zone 2002 , the number of contact 2040 in zone 2004 and number of contacts employed within zone 2007 (or 2009 )) (e.g., see FIGS. 20A-B and 22 A-B). In some cases, the size of WE 201 , WE 203 , WE 204 and LE 201 may also depend on the number of zones 2002 , 2004 , and 2007 (or 2009 ) on a package device. In some cases, the number of zones 2002 , 2004 , and 2007 (or 2009 ) will be where each of those zones is part of a “unicel” or “unit cell” communication area (e.g., including zones 2002 , 2004 and 2007 (or 2009 ) and there are between 2-20 such unicel areas on the surface of the package (and thus between 2-20 of each of zones 2002 , 2004 and 2007 (or 2009 )).

In come cases, the size of WE 201 , WE 203 , WE 204 and LE 201 may also depend on the technology capability of forming the contacts and package. In some cases, in general, the size of WE 201 and LE 201 can span from around a hundred to a couple of hundred micrometers (x E-6 meter—“um” or “microns”). In some cases, LE 201 is between 80 and 250 um. In some cases it is between 50 and 300 um. In some cases, WE 201 is between 70 and 150 um. In some cases it is between 40 and 200 um. In some cases, in general, the size of WE 203 can span from around tens of microns to more than a hundred um. In some cases, WE 203 is between 15 and 30 um. In some cases it is between 8 and 40 um. In some cases, the size of WE 201 , WE 203 , WE 204 and LE 201 can be scaled with or depend on the manufacturing or processing pitch (e.g., of the contacts).

Contacts 2020 , 2030 and 2040 that may be formed along, or under top surface 2006 . Contacts 2020 , 2030 and 2040 may have height H 205 (e.g., a thickness extending into the page) and width W 205 (e.g., see FIGS. 21A-B ). In some cases height H 205 may be approximately 15 micrometers (15×E-6 meter—“um”) and width W 205 is between 75 and 85 um. In some cases, height H 205 is between 10 and 20 micrometers (um). In some cases, it is between 5 and 30 micrometers. In some cases, width W 205 is between 70 and 90 micrometers (um). In some cases, it is between 60 and 110 micrometers. It can be appreciated that height H 205 may be an appropriate height of a conductive material contacts formed on a top layer of or within a package device, that is less than or greater than those mentioned above.

In some cases, upper contacts 2020 , 2030 and 2040 are formed (e.g., disposed) having top surfaces that are part of or horizontally planar with surface 2006 , such as by being formed with or as part of layer 2110 having conductor (1) that includes upper contacts 2020 , 2030 and 2040 of level L 1 ; and (2) between which dielectric 2003 of layer 2110 exists (having top surface 2006 ). In some cases, upper contacts 2020 , 2030 and 2040 are formed (e.g., disposed) above top surface 2006 , such as where the layer of conductor is formed on or over a layer of dielectric or other material. In some cases, upper contacts 2020 , 2030 and 2040 are is formed (e.g., disposed) under top surface 2006 , such as when a further layer of dielectric, solder resist, or other material is formed on level L 1 , over upper contacts 2020 , 2030 and 2040 .

FIG. 20B is a schematic top perspective view of a semiconductor package device upon which at least one integrated circuit (IC) chip (e.g., “die”) or other package device may be attached. FIG. 20B shows package device 2001 having a first interconnect level L 1 with upper layer 2110 having two rows of upper (e.g., top or first) layer ground isolation contacts 2020 , having upper layer receive data signal contacts 2030 and having upper layer transmit data signal contacts 2040 .

Ground signal contacts 2020 are shown having pattern 2011 in zone 2009 . Zone 2009 has width WE 204 and length LE 201 . Width WE 204 may be twice as wide as width WE 203 . In some cases, zone 2009 may be described as a ground signal cluster formed in a 2-row deep die-bump pattern 2011 . In some cases, zone 2009 and pattern 2011 includes only contacts 2020 , but no other contacts (e.g., none of contacts 2030 or 2040 ). Pattern 2011 may include having two of contacts 2020 (one of each of rows 2082 and 2085 ) located directly between (e.g., side by side, horizontally adjacent, or widthwise adjacent with respect to width WE 204 ) each of contacts 2030 and a widthwise adjacent one of contacts 2040 (e.g., side by side, or widthwise adjacent with respect to width WE 204 of FIGS. 20B-21B ). Zone 2009 and pattern 2011 may have 18 vertical ground isolation interconnect stacks, each with an ground isolation upper contact 2020 that may be formed over or onto a ground isolation via contact of level L 1 . It can be appreciated that there may be more or fewer than 18 of stacks and contacts 2020 in zone 2009 and pattern 2011 . In some cases there may be 20 stacks and contacts 2020 . In some cases 8, 10, 12, 16, 32 or 64.

More specifically, FIG. 20B shows package device 2001 having top surface 2006 , such as a surface of dielectric, upon or in which are formed (e.g., disposed) two rows of grounding contacts 2020 in locations along length LE 201 in fifth and fifth′ rows 2082 and 2085 of zone 2009 . Two of contacts 2020 (one of each of rows 2082 and 2085 ) are located directly between (e.g., side by side; horizontally adjacent; or width adjacent with respect to width WE 201 or WE 204 of top view of FIG. 20B ) each of contacts 2030 and a horizontally adjacent one of contacts 2040 (e.g., side by side; horizontally adjacent; or width adjacent with respect to width WE 201 or WE 204 of top view of FIG. 20B ).

In FIG. 20B , level L 1 ; contacts 2020 , 2030 , and 2040 ; dielectric 2003 ; rows 2074 - 2090 , surface 2006 ; width WE 201 and length LE 201 of device 2001 may be similar to those of device 2000 except there are two rows (rows 2082 and 2085 ) of contacts 2020 and 2022 in zone 2009 having width WE 204 instead of one row 2082 of contacts 2020 in zone 2007 having width WE 203 .

Rows 2082 and 2085 may be described as a two row wide ground isolation zone 2009 located or formed between zone 2002 and zone 2004 , such as forming pattern 2011 . Zone 2009 may have side 2081 widthwise adjacent to (e.g., along width WE 204 ) or facing zone 2002 and opposite side 2083 (e.g., opposite from side 2081 ) widthwise adjacent to (e.g., along width WE 204 ) or facing zone 2004 .

FIG. 21B is a schematic cross-sectional side view of the package of FIG. 20B showing solder bumps formed on upper (e.g., top or first) layer ground isolation contacts 2020 of zone 2009 , upper layer receive data signal contacts 2030 and upper layer transmit data signal contacts 2040 . In level L 1 (and similarly for some other levels) device 2001 has contacts 2030 of zone 2002 formed onto or physically attached to a top surface of via contacts 2032 , ground isolation contacts 2020 of zone 2007 formed onto or physically attached to a top surface of via contacts 2022 , and contacts 2040 of zone 2004 formed onto or physically attached to a top surface of via contacts 2042 .

FIG. 21B shows package device 2001 top or topmost (e.g., first level) interconnect level L 1 having top layer 2110 formed over or onto second level interconnect level L 2 . Device 2001 layer 2110 has dielectric 2003 , ground isolation contacts 2020 of zone 2009 , contacts 2030 of zone 2002 and contacts 2040 of zone 2004 .

Some embodiments of device 2001 (e.g., FIG. 21B ) have solder bumps 2034 formed onto or physically attached to a top surface of contacts 2030 , solder bump 2024 formed onto or physically attached to a top surface of contacts 2020 , and solder bumps 2044 formed onto or physically attached to a top surface of contacts 2040 of layer 2110 . Some embodiments of device 2001 may not have (e.g., not yet have) solder bumps 2034 formed onto or physically attached to a top surface of contacts 2030 , solder bump 2024 formed onto or physically attached to a top surface of contacts 2020 , or solder bumps 2044 formed onto or physically attached to a top surface of contacts 2040 of layer 2110 .

In FIG. 21B , level L 1 ; contacts 2020 , 2030 , and 2040 ; via contacts 2022 , 2032 and 2042 ; dielectric 2003 ; rows 2074 - 2090 , surface 2006 ; width WE 201 , length LE 201 and height H 205 of device 2001 may be similar to those of device 2000 except there are two rows (rows 2082 and 2085 ) of contacts 2020 and 2022 in zone 2009 having width WE 204 instead of one row 2082 of contacts 2020 in zone 2007 having width WE 203 .

In some cases, each of rows 2074 - 2090 (e.g., of FIGS. 20A-21B ) may be horizontally (e.g., widthwise) equidistant from each other along the direction of width WE 201 , and each of the contacts in each row may be vertically (e.g., lengthwise) equidistant from each other along length LE 201 .

In some cases, contacts 2020 are first level L 1 ground contacts located beside and between the first level first type of data signal contacts 2030 and the first level second type of data signal contacts 2040 . Contacts 2020 may be or include one (e.g., see FIG. 20A ) or two (e.g., see FIG. 20B ) rows of lengthwise adjacent (e.g., along length LE 201 ), or top to bottom located, solid conductive material ground isolation shielding surface contacts, such as in zone 2007 or 2009 , respectively. Contacts 2020 (e.g., in zone 2007 or 2009 ) may be between or have side 2081 adjacent (e.g., widthwise adjacent) to or facing zone 2002 and opposite side 2083 (e.g., opposite from side 2081 ) adjacent (e.g., widthwise adjacent) to or facing zone 2004 .

FIG. 22A is a schematic top perspective view of a semiconductor package device upon which at least one integrated circuit (IC) chip (e.g., “die”) or other package device may be attached. FIG. 22A shows package device 2200 having top surface 2006 , such as a surface of dielectric 2003 , upon or in which are formed (e.g., disposed) the grounding contacts 2020 , receive signal contacts 2030 and transmit contacts 2040 . FIG. 22A shows package device 2200 having a first interconnect level L 1 with upper layer 2110 having one row of upper (e.g., top or first) layer ground isolation contacts 2020 forming shielding pattern 2210 in zone 2007 , having upper layer receive data signal contacts 2030 and additional isolation contacts 2020 forming a shielding pattern 2205 in zone 2002 , and having upper layer transmit data signal contacts 2040 and additional isolation contacts 2020 forming a shielding pattern 2208 in zone 2004 . Due to having contacts 2020 in rows of pattern 2205 , zone 2002 (e.g., pattern 2205 ) has contacts 2020 and contacts 2030 of FIG. 22A-25B with pitch length of PL 20 /2 (e.g., half the pitch length of PL 20 of zone 2002 of FIG. 20A-21B ). Due to having contacts 2020 in rows of pattern 2208 , zone 2004 (e.g., pattern 2208 ) has contacts 2020 and contacts 2040 of FIG. 22A-25B with pitch length of PL/2 (e.g., half the pitch length of PL 20 of zone 2004 of FIG. 20A-21B ). Contacts 2020 , 2030 and 2040 are surrounded by dielectric layer 2003 such as an electrically non-conductive or insulating material.

Receive signal contacts 2030 and contacts 2020 are shown having pattern 2205 in zone 2002 . Pattern 2205 may include having receive signal contacts 2030 and contacts 2020 in first row 2074 , second row 2076 , third row 2078 , and fourth row 2080 in zone 2002 . Pattern 2205 may include having the receive signal contacts 2030 and contacts 2020 in rows 2076 and 2080 lengthwise offset (e.g., along LE 201 ) below contacts of rows 2074 and 2078 by one half pitch length PL 20 /2. In some cases, pattern 2205 may include having contacts 2030 and contacts 2020 in rows 2076 and 2080 lengthwise offset (e.g., along LE 201 ) to be lengthwise between those of rows 2074 and 2078 along pitch length PL 20 .

In some cases, shielding pattern 2205 includes alternating rows having the following patterns of contacts lengthwise adjacent along length LE 201 : first rows of contacts 2020 , 2030 , 2030 , 2020 , 2030 , 2030 , 2020 , 2030 (e.g., in alternating rows 2074 and 2078 ) alternating with second rows of contacts 2030 , 2020 , 2030 , 2030 , 2020 , 2030 , 2030 , 2020 which are rows that extend downwards from one half pitch length PL 20 below the first rows (e.g., in alternating rows 2076 and 2080 ). As shown in FIG. 22A , this sequence may start at row 2074 and continue through row 2080 . In some cases, shielding pattern 2205 includes having each of contacts 2020 surrounded in a hexagonal shape (with one corner to tip pointing lengthwise upwards along length LE 201 ) by six of contacts 2030 , or by as many of contacts 2030 as there are (e.g., as fit into) zone 2002 . In some cases, the pattern includes having two signal contacts 2030 lengthwise adjacent between each pair of contacts 2020 . In some cases, the pattern includes two lengthwise adjacent signal contacts 2030 having one grounding contact 2020 lengthwise above and below a two signal contacts 2030 ; and having two grounding contacts 2020 widthwise adjacent to and offset to be between the lengthwise distance between (PL 20 /2) the two signal contacts 2030 .

In some cases, zone 2002 may be described as a receive or “RX” signal cluster having receive contacts 2030 and isolation contacts 2020 formed in a vertically offset 4-row deep die-bump pattern 2205 . In some cases, pattern 2205 includes only contacts 2030 and contacts 2020 , but no other contacts (e.g., none of contacts 2040 ). Pattern 2205 is shown having 20 vertical data signal interconnect stacks and 12 vertical ground isolation signal interconnect stacks, each with exposed data signal upper contact 2030 and 2020 that may be formed over or onto a data signal via contact and a ground signal vial contact, respectively, of level L 1 . It can be appreciated that there may be more or fewer of stacks and contacts 2030 and 2020 . In some cases there may be 18 stacks and contacts 2030 ; and 10 stacks and contacts 2020 in pattern 2205 . In some cases there may be 8, 10, 12, 16, 32 or 64 stacks and contacts 2030 ; and 4, 5, 6, 8, 16 or 32 stacks and contacts 2020 in pattern 2205 .

Next, along the direction of width WE 203 , row 2082 includes pattern 2210 having contacts 2020 along length LE 201 . Pattern 2210 is discussed further below with respect to zones 2002 and 2004 .

Next, along the direction of width WE 201 , transmit signal contacts 2040 and contacts 2020 are shown having pattern 2208 in zone 2004 . Pattern 2208 may include having transmit signal contacts 2040 and contacts 2020 in sixth row 2084 , seventh row 2086 , eighth row 2088 , and ninth row 2090 in zone 2004 . Pattern 2208 may include having the transmit signal contacts 2040 and contacts 2020 in rows 2086 and 2090 lengthwise offset (e.g., along LE 201 ) above contacts of rows 2084 and 2088 by one half pitch length PL 20 /2. In some cases, pattern 2208 may include having contacts 2040 and contacts 2020 in rows 2086 and 2090 lengthwise offset (e.g., along LE 201 ) to be lengthwise between those of rows 2084 and 2088 along pitch length PL 20 .

In some cases shielding pattern 2208 includes alternating rows having the following patterns of contacts lengthwise adjacent along length LE 201 : first row of contacts 2040 , 2020 , 2040 , 2040 , 2020 , 2040 , 2040 , 2020 (e.g., in alternating rows 2084 and 2088 ) alternating with second row of contacts 2020 , 2040 , 2040 , 2020 , 2040 , 2040 , 2020 , 2040 which are rows that extend downwards from one half pitch length PL 20 above the first rows (e.g., in alternating rows 2086 and 2090 ). As shown in FIG. 22A , this sequence may start at row 2084 and continue through row 2090 . In some cases, shielding pattern 2208 includes having each of contacts 2020 surrounded in a hexagonal shape (with one corner to tip pointing lengthwise upwards along length LE 201 ) by six of contacts 2040 , or by as many of contacts 2030 as there are (e.g., as fit into) zone 2004 . In some cases, the pattern includes having two signal contacts 2040 lengthwise adjacent between each pair of contacts 2020 . In some cases, the pattern includes two lengthwise adjacent signal contacts 2040 having one grounding contact 2020 lengthwise above and below a two signal contacts 2040 ; and having two grounding contacts 2020 widthwise adjacent to and offset to be between the lengthwise distance between (PL 20 /2) the two signal contacts 2040 .

In some cases, zone 2004 may be described as a transmit or “TX” signal cluster having transmit contacts 2040 and isolation contacts 2020 formed in a vertically offset 4-row deep die-bump pattern 2208 . In some cases, pattern 2208 includes only contacts 2040 and contacts 2020 , but no other contacts (e.g., none of contacts 2030 ). Pattern 2208 is shown having 20 vertical data signal interconnect stacks and 12 vertical ground isolation signal interconnect stacks, each with exposed data signal upper contact 2040 and 2020 that may be formed over or onto a data signal via contact and a ground signal vial contact, respectively, of level L 1 . It can be appreciated that there may be more or fewer of stacks and contacts 2040 and 2020 . In some cases there may be 18 stacks and contacts 2040 ; and 10 stacks and contacts 2020 in pattern 2208 . In some cases there may be 8, 10, 12, 16, 32 or 64 stacks and contacts 2040 ; and 4, 5, 6, 8, 16 or 32 stacks and contacts 2020 in pattern 2208 .

Ground signal contacts 2020 are shown having pattern 2210 in zone 2007 . Zone 2007 has width WE 203 and length LE 201 . Pattern 2210 may include having ground signal contacts 2020 in fifth row 2082 in zone 2007 . In some cases, zone 2007 may be described as a ground signal cluster formed in a vertically offset 1-row deep die-bump pattern 2210 . In some cases, pattern 2210 (or pattern 411 of FIG. 22B ) includes only contacts 2020 , but no other contacts (e.g., none of contacts 2030 or 2040 ).

In some cases, as shown, pattern 2210 may include having one of contacts 2020 of a first horizontally adjacent row (one of row 2082 ) located horizontally equidistant directly between and lengthwise offset (e.g., along LE 201 ) above, immediately widthwise adjacent contacts of adjacent rows (e.g., of rows 2080 and 2084 ) by one half pitch length PL 20 /2. In some cases, as shown, pattern 2210 may include having one of contacts 2020 (one of row 2082 ) located horizontally equidistant directly between and lengthwise located horizontally adjacent (e.g., side by side, or widthwise adjacent with respect to width WE 203 of FIG. 22A ) every second widthwise adjacent pair of (e.g., every other) of contacts (e.g., side by side, or widthwise adjacent with respect to width WE 203 of FIG. 22A ) of zones 2002 and 2004 (e.g., of rows 2078 and 2086 ). Pattern 2210 may have 8 vertical ground isolation interconnect stacks, each with an ground isolation upper contact 2020 that may be formed over or onto a ground isolation via contact of level L 1 . It can be appreciated that there may be more or fewer than 8 of stacks and contacts 2020 in pattern 2210 . In some cases there may be 7 stacks and contacts 2020 . In some cases 4, 5, 6, 8, 16 or 32.

Pattern 2205 may be described as a vertically offset four row wide zone of receive contacts and isolation contacts. Pattern 2208 may be described as a vertically offset four row wide zone of transmit contacts and isolation contacts. Pattern 2210 may be described as a vertically offset one row wide ground isolation zone 2007 located or formed between zone 2002 and zone 2004 . Pattern 2210 may have side 2081 widthwise adjacent to (e.g., along width WE 203 ) or facing zone 2002 and opposite side 2083 (e.g., opposite from side 2081 ) widthwise adjacent to (e.g., along width WE 203 ) or facing zone 2004 . It can be appreciated that although patterns 2205 and 2208 are shown with the same width and length, they may have different widths and/or lengths.

In some cases, each of rows 2074 - 2090 may be horizontally (e.g., widthwise) equidistant from each other along the direction of width WE 201 , and each of the contacts in each row may be vertically (e.g., lengthwise) equidistant from each other along length LE 201 .

In some cases, instead of pattern 2210 , device 2200 may have a double wide pattern of contacts 2020 such as described for zone 2009 of FIGS. 20B and 21B . In this case, the pattern may include having two of contacts 2020 (such as shown for zone 2009 of FIGS. 20B and 21B ) located directly between (e.g., side by side, horizontally adjacent, or widthwise adjacent with respect to width WE 204 of FIG. 22A ) each of contacts 2030 and a widthwise adjacent one of contacts 2040 (e.g., side by side, or widthwise adjacent with respect to width WE 203 of FIG. 22A ). This pattern may have 16 vertical ground isolation interconnect stacks, each with an ground isolation upper contact 2020 that may be formed over or onto a ground isolation via contact of level L 1 . It can be appreciated that there may be more or fewer than 16 of stacks and contacts 2020 in the pattern. In some cases there may be 18 stacks and contacts 2020 . In some cases 8, 10, 12, 16, 32 or 64.

FIG. 22B is a schematic top perspective view of a semiconductor package device upon which at least one integrated circuit (IC) chip (e.g., “die”) or other package device may be attached. FIG. 22B shows package device 2201 having top surface 2006 , such as a surface of dielectric 2003 , upon or in which are formed (e.g., disposed) the grounding contacts 2020 , receive signal contacts 2030 and transmit contacts 2040 . FIG. 22B shows package device 2201 having a first interconnect level L 1 with upper layer 2110 having one row of upper (e.g., top or first) layer ground isolation contacts 2020 forming shielding pattern 2260 in zone 2007 , having upper layer receive data signal contacts 2030 and additional isolation contacts 2020 forming a shielding pattern 2255 in zone 2002 , and having upper layer transmit data signal contacts 2040 and additional isolation contacts 2020 forming a shielding pattern 2258 in zone 2004 . Contacts 2020 , 2030 and 2040 are surrounded by dielectric layer 2003 such as an electrically non-conductive or insulating material.

Receive signal contacts 2030 and contacts 2020 are shown having pattern 2255 in zone 2002 . Pattern 2255 may include having receive signal contacts 2030 or ground contacts 2020 in first row 2274 , second row 2275 , third row 2276 , fourth row 2277 , fifth row 2278 , sixth row 2279 , and seventh row 2280 in zone 2002 . Pattern 2255 may include having ground contacts 2020 (e.g., only contacts 2020 , but no other contacts (e.g., none of contacts 2030 or 2040 )) in first row 2274 , fourth row 2277 , and fifth row 2278 ; and having receive signal contacts 2030 (e.g., only contacts 2030 , but no other contacts (e.g., none of contacts 2020 or 2040 )) in second row 2275 , third row 2276 , sixth row 2279 , and seventh row 2280 . Pattern 2255 may include having the receive signal contacts 2030 or contacts 2020 in rows 2275 , 2277 and 2279 lengthwise offset (e.g., along LE 201 ) above contacts of rows 2274 , 2276 , 2278 and 2280 by one half pitch length PL 20 . In some cases, pattern 2255 may include having contacts 2030 or contacts 2020 in rows 2275 , 2277 and 2279 lengthwise offset (e.g., along LE 201 ) to be lengthwise between those of rows 2274 , 2276 , 2278 and 2280 along pitch length PL 20 .

In some cases, zone 2002 may be described as a receive or “RX” signal cluster having receive contacts 2030 or isolation contacts 2020 formed in a vertically offset 7-row deep die-bump pattern 2255 . In some cases, pattern 2255 includes only contacts 2030 and contacts 2020 , but no other contacts (e.g., none of contacts 2040 ). Pattern 2255 is shown having 20 vertical data signal interconnect stacks and 15 vertical ground isolation signal interconnect stacks, each with exposed data signal upper contact 2030 and 2020 that may be formed over or onto a data signal via contact and a ground signal vial contact, respectively, of level L 1 . It can be appreciated that there may be more or fewer of stacks and contacts 2030 and 2020 . In some cases there may be 18 stacks and contacts 2030 ; and 13 stacks and contacts 2020 in pattern 2255 . In some cases there may be 8, 10, 12, 16, 32 or 64 stacks and contacts 2030 ; and 4, 5, 6, 8, 16 or 32 stacks and contacts 2020 in pattern 2205 .

Next, along the direction of width WE 203 , rows 2281 and 2282 include pattern 2260 having contacts 2020 along length LE 201 . Pattern 2260 is discussed further below with respect to zones 2002 and 2004 .

Next, along the direction of width WE 201 , transmit signal contacts 2040 and contacts 2020 are shown having pattern 2258 in zone 2004 . Pattern 2258 may include having transmit signal contacts 2040 or ground contacts 2020 in tenth row 2283 , eleventh row 2284 , twelfth row 2285 , thirteenth row 2286 , fourteenth row 2287 , fifteenth row 2288 , and sixteenth row 2289 in zone 2004 . Pattern 2258 may include having ground contacts 2020 (e.g., only contacts 2020 , but no other contacts (e.g., none of contacts 2030 or 2040 )) in twelvth row 2285 , thirteenth row 2286 and sixteenth row 2289 ; and having receive signal contacts 2030 (e.g., only contacts 2040 , but no other contacts (e.g., none of contacts 2020 or 2030 )) in tenth row 2283 , eleventh row 2284 , fourteenth row 2287 , and fifteenth row 2288 . Pattern 2258 may include having the transmit signal contacts 2040 or contacts 2020 in rows 2284 , 2286 and 2288 lengthwise offset (e.g., along LE 201 ) below contacts of rows 2283 , 2285 , 2287 and 2289 by one half pitch length PL 20 . In some cases, pattern 2258 may include having contacts 2040 or contacts 2020 in rows 2284 , 2286 and 2288 lengthwise offset (e.g., along LE 201 ) to be lengthwise between those of rows 2283 , 2285 , 2287 and 2289 along pitch length PL 20 .

In some cases, zone 2004 may be described as a transmit or “TX” signal cluster having transmit contacts 2040 or isolation contacts 2020 formed in a vertically offset 7-row deep die-bump pattern 2258 . In some cases, pattern 2258 includes only contacts 2040 and contacts 2020 , but no other contacts (e.g., none of contacts 2030 ). Pattern 2258 is shown having 20 vertical data signal interconnect stacks and 15 vertical ground isolation signal interconnect stacks, each with exposed data signal upper contact 2040 and 2020 that may be formed over or onto a data signal via contact and a ground signal vial contact, respectively, of level L 1 . It can be appreciated that there may be more or fewer of stacks and contacts 2040 and 2020 . In some cases there may be 18 stacks and contacts 2040 ; and 13 stacks and contacts 2020 in pattern 2258 . In some cases there may be 8, 10, 12, 16, 32 or 64 stacks and contacts 2040 ; and 4, 5, 6, 8, 16 or 32 stacks and contacts 2020 in pattern 2205 .

Ground signal contacts 2020 are shown having pattern 2260 in zone 2007 . Zone 2007 has width WE 203 and length LE 201 . Pattern 2260 may include having ground signal contacts 2020 in eighth row 2281 and ninth row 2282 in zone 2007 . In some cases, zone 2007 may be described as a ground signal cluster formed in a vertically offset 2-row deep die-bump pattern 2260 . In some cases, pattern 2260 includes only contacts 2020 , but no other contacts (e.g., none of contacts 2030 or 2040 ).

In some cases, as shown, pattern 2260 may include having one of contacts 2020 of a first horizontally adjacent row (one contact of row 2281 ) located horizontally equidistant directly between and lengthwise offset (e.g., along LE 201 ) above, immediately widthwise adjacent contacts of adjacent rows (e.g., of rows 2280 and 2282 ) by one half pitch length PL 20 ; and having a one of contacts 2020 of a second horizontally adjacent row (one contact of row 2282 ) located horizontally equidistant directly between and lengthwise offset (e.g., along LE 201 ) below, immediately widthwise adjacent contacts of adjacent rows (e.g., of rows 2281 and 2283 ) by one half pitch length PL 20 . In some cases, as shown, pattern 2260 may include having one of contacts 2020 of two widthwise adjacent rows (one contact of row 2281 and of row 2282 ) located horizontally equidistant directly between and lengthwise located horizontally adjacent (e.g., side by side, or widthwise adjacent with respect to width WE 203 of FIG. 22B ) every second widthwise adjacent pair of (e.g., every other) of contacts (e.g., side by side, or widthwise adjacent with respect to width WE 203 of FIG. 22B ) of zones 2002 and 2004 (e.g., of rows 2279 and 2283 ; and rows 2280 and 2284 , respectively). Pattern 2260 may have 10 vertical ground isolation interconnect stacks, each with an ground isolation upper contact 2020 that may be formed over or onto a ground isolation via contact of level L 1 . It can be appreciated that there may be more or fewer than 10 of stacks and contacts 2020 in pattern 2210 . In some cases there may be 9 stacks and contacts 2020 . In some cases 4, 5, 6, 8, 16 or 32.

Pattern 2255 may be described as a vertically offset seven row wide zone of receive contacts and isolation contacts. Pattern 2258 may be described as a vertically offset seven row wide zone of transmit contacts and isolation contacts. Pattern 2260 may be described as a vertically offset two row wide ground isolation zone 2007 located or formed between zone 2002 and zone 2004 . Pattern 2260 may have side 2081 widthwise adjacent to (e.g., along width WE 203 ) or facing zone 2002 and opposite side 2083 (e.g., opposite from side 2081 ) widthwise adjacent to (e.g., along width WE 203 ) or facing zone 2004 . It can be appreciated that although patterns 2255 and 2258 are shown with the same width and length, they may have different widths and/or lengths.

In some cases, each of rows 2274 - 2289 may be horizontally (e.g., widthwise) equidistant from each other along the direction of width WE 201 , and each of the contacts in each row may be vertically (e.g., lengthwise) equidistant from each other along length LE 201 .

Similar to descriptions for FIG. 21A solder bumps may be formed on upper (e.g., top or first) layer ground isolation contacts 2020 of patterns 2210 and 2260 ; upper layer receive data signal contacts 2030 and isolation contacts 2020 of patterns 2205 and 2255 ; and upper layer transmit data signal contacts 2040 and isolation contacts 2020 of patterns 2208 and 2258 . In level L 1 (and similarly for some other levels) devices 2200 and 2201 may have contacts 2030 formed onto or physically attached to a top surface of via contacts 2032 , ground isolation contacts 2020 formed onto or physically attached to a top surface of via contacts 2022 , and contacts 2040 formed onto or physically attached to a top surface of via contacts 2042 , similar to descriptions for FIG. 21A .

Some embodiments of devices 2200 and 2201 may have top or topmost (e.g., first level) interconnect level L 1 having top layer 2110 formed over or onto second level interconnect level L 2 . Devices 2200 and 2201 layer 2110 has dielectric 2003 surrounding ground isolation contacts 2020 , contacts 2030 and contacts 2040 , similar to descriptions for FIG. 21A .

Some embodiments of devices 2200 or 2201 (e.g., FIG. 22A or 22B ) may have solder bumps 2034 formed onto or physically attached to a top surface of contacts 2030 , solder bump 2024 formed onto or physically attached to a top surface of contacts 2020 , and solder bumps 2044 formed onto or physically attached to a top surface of contacts 2040 of layer 2110 (e.g., similar to descriptions for FIGS. 21A and 21B ). Some embodiments of devices 2200 and 2201 may not have (e.g., not yet have) solder bumps 2034 formed onto or physically attached to a top surface of contacts 2030 , solder bump 2024 formed onto or physically attached to a top surface of contacts 2020 , or solder bumps 2044 formed onto or physically attached to a top surface of contacts 2040 of layer 2110 .

In some cases, solder bumps 2024 , 2034 and 2044 (e.g., herein) may be described as “physical attachments” or “solid conductive material ground isolation shielding attachments” attached to contacts 2020 , 2030 and 2040 . They may also be describe as “physical attachments” or “solid conductive material ground isolation shielding attachments” attaching (e.g., physically and electrically attaching) contacts 2020 , 2030 and 2040 ; or device 2000 , 2001 , 2200 or 2201 to another package device or next level component.

In some cases, solder bumps 2024 , 2034 and 2044 are shot onto a surface of the substrate and a solder reflow process is performed on solder bumps 2024 , 2034 and 2044 to cause the solder to attach the next level component to layer 2110 using solder bumps 2024 , 2034 and 2044 .

Top or topmost (e.g., first level) interconnect level L 1 of devices 2000 , 2001 , 2200 and 2201 may be formed over a second level interconnect level L 2 , which is formed over other interconnect levels. In FIGS. 20A-22B data signal interconnect contacts 2030 and 2040 of rows 2074 - 2090 , and 2274 - 2289 may represent vertical data signal interconnects of the package device (e.g., upper surface contacts of multiple levels of levels). In FIGS. 20A-22B , ground interconnect contacts 2020 may represent solid conductive material ground isolation shielding surface contacts of the package device (e.g., upper surface contacts of multiple levels of levels).

Below level L 1 , package devices 2000 , 2001 , 2200 and 2201 may include various interconnect layers, packaging layers, conductive features (e.g., electronic devices, interconnects, layers having conductive traces, layers having conductive vias), layers having dielectric material and other layers as known in the industry for a semiconductor device package. In some cases, the package may be cored or coreless. In some cases, the package includes features formed according to a standard package substrate formation processes and tools such as those that include or use: lamination of dielectric layers such as ajinomoto build up films (ABF), laser or mechanical drilling to form vias in the dielectric films, lamination and photolithographic patterning of dry film resist (DFR), plating of conductive traces (CT) such as copper (Cu) traces, and other build-up layer and surface finish processes to form layers of electronic conductive traces, electronic conductive vias and dielectric material on one or both surfaces (e.g., top and bottom surfaces) of a substrate panel or peel able core panel. The substrate may be a substrate used in an electronic device package or a microprocessor package. In some cases, level L 1 may also include such structures noted above for package device 2000 , thought not shown in FIG. 21A . In some cases, the contacts and/or traces of level L 1 are electrically connected to (e.g., physically attached to or formed onto) the conductive structures noted above for package device 2000 .

Contacts 2020 , 2030 and 2040 of devices 2000 , 2001 , 2200 and 2201 may be areas of an upper (e.g., top or first) layer of conductive material that is formed as part of upper layer 2110 of level L 1 . In some cases, contacts 2020 , 2030 and 2040 are part of an upper layer of conductive material that is formed during the same deposition or plating used to form other conductive material of level L 1 . In some cases, contacts 2020 , 2030 and 2040 are each a layer of solid electrical conductor material extending width W 205 and between which is disposed dielectric portions 2003 surrounding upper contacts 2020 , 2030 and 2040 of layer 2110 .

According to some embodiments, one, two or three of contacts 2020 (e.g., and solder bumps 2024 ) of row 2082 , 2085 , 2281 or 2282 may be replaced by power contacts, such as contacts used to transmit or provide power signals to an IC chip or other package device attached to the power contacts of Level L 1 . In some cases the power contacts are used to provide an alternating current (AC) or a direct current (DC) power signal (e.g., Vdd). In some cases the signal has a voltage of between 0.5 and 2.0 volts. In some cases it is between 0.4 and 7.0 volts. In some cases it is between 0.5 and 5.0 volts. In some cases it is a different voltage level. In some cases, between one and 3 of contacts 2020 (e.g., and solder bumps 2024 ) in the middle of row 2082 , 2085 , 2281 or 2282 (e.g., not on the lengthwise end of LE 201 ) may be replaced by power contacts. In some cases, two of contacts 2020 (e.g., and solder bumps 2024 ) in the middle of row 2082 , 2085 , 2281 or 2282 may be replaced by power contacts. In some cases, two of contacts 2020 (e.g., and solder bumps 2024 ) in the middle of row 2082 or 2281 are replaced by power contacts.

Zones 2002 , 2004 and 2007 (or 2009 ) (and level L 1 ) may have features having standard package pitch as known for a semiconductor die package, chip package; or for another device (e.g., interface, PCB, or interposer) typically connecting a die (e.g., IC, chip, processor, or central processing unit) to a socket, a motherboard, or another next-level component. The pitch width (PW 20 ) of adjacent contacts is shown as the width distance between the center point of two adjacent contacts. FIGS. 20A-B and 22 A-B show pitch width (PW 20 ), pitch diagonal (PD 20 ) and pitch length (PL 20 ) (or PL 20 /2) for rows 2074 - 2090 and 2274 - 2289 . It can be appreciated that the same pitch width may apply to each of adjacent rows of rows 2074 - 2090 and 2274 - 2289 . In some cases, pitch PW 20 is approximately 153 micrometers (153×E-6 meter —“um”). In some cases, pitch PW 20 is approximately 160 micrometers. In some cases, it is between 140 and 175 micrometers. The diagonal pitch (PD 20 ) of adjacent contacts is the diagonal distance between the center of two adjacent contacts. In some cases, pitch PD 20 is approximately 110 micrometers (110×E-6 meter—“um”). In some cases, pitch PD 20 is approximately 130 micrometers. In some cases, it is between 100 and 140 micrometers (um). In some cases, it is between 60 and 200 micrometers. The pitch length (PL 20 ) (or PL 20 /2) of two adjacent contacts is the length distance between the center point of two adjacent contacts. In some cases, pitch PL 20 is approximately 158 micrometers. In some cases, pitch PL 20 is approximately 206 micrometers. In some cases, it is between 130 and 240 micrometers (um). In some cases, pitch PD 20 is approximately 110 micrometers, PL 20 is approximately 158 micrometers and PW 20 is approximately 153 micrometers. In some cases, pitch PD 20 is approximately 130 micrometers, PL 20 is approximately 206 micrometers and PW 20 is approximately 160 micrometers. In the cases above, “approximately” may represent a difference of within plus or minus 5 percent of the number stated. In other cases, it may represent a difference of within plus or minus 10 percent of the number stated.

According to some embodiments, the pitches above are for (e.g., apply to) PD 20 , PL 20 and PW 20 between contacts 2020 , 2030 and/or 2040 (and optionally solder bumps 2024 , 2034 and 2044 ) for BGA 2712 , 2718 and/or 2719 . It can be appreciated that different pitches PD 20 , PL 20 and PW 20 may exist between contacts 2020 , 2030 and/or 2040 (and optionally solder bumps 2024 , 2034 and 2044 ) for BGA 2714 , 2716 , 2816 or contacts 2865 as described below after FIG. 28 .

In some cases, “widthwise adjacent” may refer to attachments or contacts that are side by side with respect to direction of width WE 203 . In some cases, it may also include attachments or contacts that are lengthwise above or below (e.g., in a different column of rows 2074 - 2090 with repsect to length LE 201 of FIG. 20A-B ) those that are widthwise adjacent or side by side with respect to direction of width WE 203 or WE 204 .

In some cases, contacts 2020 (e.g., and bumps 2024 ) are used to transmit or provide grounding (e.g., isolation) signals to an IC chip or other package device attached to contacts 2020 of Level L 1 . In some cases they are used to provide a zero voltage direct current (DC) grounding signal (e.g., GND). In some cases the signal has a voltage of between 0.0 and 0.2 volts. In some cases it is a different but grounding voltage level.

In some cases, contacts 2030 and 2040 (e.g., and bumps 2034 and 2044 ) are used to transmit or provide a receive data signal or transmit data signal, respectively, from an IC chip or other package device attached to contacts 2030 and 2040 of Level L 1 . In some cases they are used to provide an alternating current (AC) or high frequency (HF) receive data signal (e.g., RX and TX). In some cases the signal has a speed (e.g., frequency) of between 7 and 25 GT/s; and a voltage of between 0.5 and 2.0 volts. In some cases the signal has a speed of between 6 and 15 GT/s. In some cases the signal has a voltage of between 0.4 and 5.0 volts. In some cases it is a different speed and/or voltage level.

In some cases, solid conductive material ground isolation shielding attachments such as solder balls or ball grid arrays (BGA) are physically attached to (e.g., soldered to or touching) the first level ground contacts 2020 . In some cases, solid conductive material data signal attachments such as solder balls or ball grid arrays (BGA) are physically attached to (e.g., soldered to or touching) the first level data signal contacts 2030 and 2040 .

In some cases, solder bumps (or balls) 2024 , 2034 and 2044 are formed onto contacts 2020 , 2030 and 2040 (e.g., see FIGS. 20A-22B ). They may be formed after forming openings in a layer of solder resist formed on layer 2110 as noted herein. They may be formed in the openings through the solder resist (not shown in FIGS. 20A-22B ). They may be formed by an appropriate process for forming such bumps. In this case, the ground shielding attachment structures may include solid conductive material ground isolation shielding attachments such as the solder bumps or a ball grid arrays (BGA) of the bumps 2024 , 2034 and 2044 physically attached to the solid conductive material ground isolation shielding surface contacts 2020 for forming the isolation attachments onto (e.g., see FIGS. 20A-22B ).

In some cases, layer 2110 is a “top” layer such as a top or exposed layer (e.g., a final build-up (BU) layer, BGA layer, LGA layer, or die-backend-like layer) to which an IC chip, a socket, an interposer, a motherboard, or another next-level component will be mounted or directly attached using solder bumps 2024 , 2034 and 2044 . In some cases, solder bumps 2024 , 2034 and 2044 have width W 206 and height H 206 . In some cases, width W 206 of solder bumps 2024 , 2034 and 2044 may be between 100 and 600 micrometers. In some cases, it is between 300 and 400 micrometers. In some cases, height H 206 of solder bumps 2024 , 2034 and 2044 may be between 100 and 400 micrometers. In some cases, it is between 200 and 300 micrometers.

In some cases, a solder resist layer (not shown in FIGS. 20A-23 ) is formed over level L 1 . Such a resist may be a height (e.g., thickness) of solid non-conductive or electrical insulator solder resist material. Such material may be or include an epoxy, an ink, a resin material, a dry resist material, a fiber base material, a glass fiber base material, a cyanate resin and/or a prepolymer thereof; an epoxy resin, a phenoxy resin, an imidazole compound, an arylalkylene type epoxy resin or the like as known for such a solder resist. In some cases it is an epoxy or a resin. In some cases it is an insulating organic material, laminated material, photosensitive material, or other known solder resist material.

The resist may be a blanket layer that is masked and etched (e.g., by patterning and developing as known in the art) to form openings where solder can be formed on and attached to the upper contacts (e.g., contacts 2020 , 2030 and 2040 ), or where contacts of anther device (e.g., a chip) can be soldered to the upper contacts. Alternatively, the resist may be a layer that is formed on a mask, and the mask then removed to form the openings. In some cases, the resist may be a material (e.g., epoxy) liquid that is silkscreened through or sprayed onto a pattern (e.g., mask) formed on the package; and the mask then removed (e.g., dissolved or burned) to form the openings. In some cases, the resist may be a liquid photoimageable solder mask (LPSM) ink or a dry film photoimageable solder mask (DFSM) blanket layer sprayed onto the package; and then masked and exposed to a pattern and developed to form the openings. This developing process may be selective to remove the resist in the solder bump designated locations (e.g., openings) which were exposed or masked from exposure to light via a lithography process, depending on whether a positive or negative tone resist is used, while keeping the solde resist layer intact in the remaining locations. Furthermore the developing process may be chosen to be selective so as not to remove dielectric 2003 or contacts 2020 , 2030 and 2040 . In some cases, the solder resist may have a height that may be between 5 and 50 micrometers. In some cases, the resist goes through a thermal cure of some type after the openings (e.g., pattern) are defined. In some cases the resist is laser scribed to form the openings. In some cases, the resist may be formed by a process known to form such a resist of a package.

In some cases, solder bumps (or balls) 2024 , 2034 and 2044 are formed onto contacts 2020 , 2030 and 2040 (e.g., see FIGS. 20A-21B ). They may be formed after forming openings in a layer of solder resist formed on layer 2110 as noted above. They may be formed in the openings through the solder resist (not shown in FIGS. 20A-21B ). They may be formed by an appropriate process for forming such bumps. In this case, the ground shielding attachment structures may include solid conductive material ground isolation shielding attachments such as the solder bumps or a ball grid arrays (BGA) of the bumps 2024 , 2034 and 2044 physically attached to the solid conductive material ground isolation shielding surface contacts 2020 for forming the isolation attachments onto (e.g., see FIGS. 20A-21B ).

As note for FIGS. 20A-23 , ground shielding attachment structures may include solid conductive material ground isolation shielding attachments 2024 such as solder balls or ball grid arrays (BGA); and/or solid conductive material ground isolation shielding surface contacts 2020 for the isolation attachments.

In some cases, the solid conductive material ground shielding attachment structures of zones 2007 and 2009 (e.g., surface contacts 2020 and/or bumps 2024 of zone 2007 , zone 2009 , pattern 2210 and pattern 2260 ) provide an electrical ground isolation shield between zones 2002 and 2004 of level L 1 that reduces “die bump field” crosstalk between all widthwise adjacent ones of different types (e.g., RX and TX) of data signal surface contacts (e.g., contacts 2030 and 2040 ) and solder bumps (e.g., bumps 2034 and 2044 ) of or on a top level L 1 or layer 2110 of a package device (e.g., device 2000 , 2001 , 2200 and 2201 ) by being between zones (e.g., fields or clusters) 2002 and 2004 of level L 1 . In some cases, “die bump field” crosstalk may be “die bump zone” crosstalk, “die bump cluster” crosstalk, or crosstalk between zones 2002 and 2004 . Here “widthwise adjacent” may be along width WE 203 or WE 204 with respect to FIGS. 20A-B and 22 A-B, and may also be described as “horizontally adjacent” such as with respect to FIGS. 21A-B and 23 .

In some cases, the solid conductive material ground isolation shielding attachments 2024 of zones 2007 and 2009 (e.g., of the ground shielding attachment structures) (such as of zone 2007 , zone 2009 , pattern 2210 and pattern 2260 ) provide an electrical ground isolation shield between two fields (e.g., zones) of different types (e.g., RX and TX) of data signal attachment structures (e.g., bumps 2034 and 2044 ) formed onto or physically attached to data signal surface contacts (e.g., contacts 2030 and 2040 ) of a top level L 1 or top layer 2110 of a package device (e.g., device 2000 , 2001 , 2200 and 2201 ).

In some cases, the ground shielding attachment structures 2024 of zone 2007 , zone 2009 , pattern 2210 and pattern 2260 provide electrical ground isolation shielding between zones 2002 and 2004 of level L 1 that reduces “die bump field” crosstalk between all widthwise adjacent ones of bumps 2034 and 2044 by being between zones 2002 and 2004 above level L 1 .

In some cases, attachments 2024 (e.g., of zone 2007 , zone 2009 , pattern 2210 and pattern 2260 ) between data signal attachment structures 2034 of zone 2002 and 2044 of zone 2004 may each provide an electrical ground isolation shield between structures 2034 and 2044 of zones 2002 and 2004 above level L 1 that reduces “die bump field” crosstalk between all widthwise or otherwise adjacent ones of (e.g., above layer 2110 ) structures 2034 and 2044 that attachments 2024 are between (e.g., by those attachments 2024 being in zone 2007 or 2009 and over level L 1 ).

In some cases, the solid conductive material ground shielding attachment structures 2020 of zones 2007 and 2009 (e.g., of the ground shielding attachment structures) (such as of zone 2007 , zone 2009 , pattern 2210 and pattern 2260 ) provide an electrical ground isolation shield between two fields (e.g., zones) of different types (e.g., RX and TX) of data signal surface contacts (e.g., contacts 2030 and 2040 ) of a top level L 1 or top layer 2110 of a package device (e.g., device 2000 , 2001 , 2200 and 2201 ).

In some cases, the ground shielding attachment contacts 2020 of zone 2007 , zone 2009 , pattern 2210 and pattern 2260 provide electrical ground isolation shielding between zones 2002 and 2004 of level L 1 that reduces “die contact field” crosstalk between all widthwise adjacent ones of (e.g., of layer 2110 ) contacts 2030 and 2040 by being between zones 2002 and 2004 of level L 1 .

In some cases, structures 2020 (e.g., of zone 2007 , zone 2009 , pattern 2210 and pattern 2260 ) between data signal contacts 2030 of zone 2002 and 2040 of zone 2004 may each provide an electrical ground isolation shield between contacts 2030 and 2040 of zones 2002 and 2004 of level L 1 that reduces “die contact field” crosstalk between all widthwise or otherwise adjacent ones of (e.g., of layer 2110 ) contacts 2030 and 2040 that contacts 2020 are between (e.g., by those attachments 2020 being in zone 2007 or 2009 of level L 1 ).

In some cases, the solid conductive material ground shielding attachment structures within zones 2002 and 2004 (e.g., surface contacts 2020 and/or bumps 2024 of zone 2002 , zone 2004 , pattern 2205 , pattern 2208 , pattern 2255 and pattern 2258 ) provide an electrical ground isolation shield within zones 2002 and 2004 of level L 1 that reduces “die bump in-field” crosstalk between all adjacent ones of same type (e.g., RX or TX) of data signal surface contacts (e.g., contacts 2030 or 2040 ) and solder bumps (e.g., bumps 2034 or 2044 ) of or on a top level L 1 or layer 2110 of a package device (e.g., device 2000 , 2001 , 2200 and 2201 ) by being between two data signal contacts of zones (e.g., fields or clusters) 2002 and 2004 of level L 1 . In some cases, “die bump in-field” crosstalk may be “die bump in-zone” crosstalk, “die bump in-cluster” crosstalk, or crosstalk within zones 2002 and 2004 . Here “adjacent” may be widthwise adjacent, lengthwise adjacent, diagonalwise adjacent with respect to FIGS. 20A-B and 22 A-B, and may also be described as horizontally adjacent or vertically adjacent such as with respect to FIGS. 21A-B and 23 .

In some cases, the solid conductive material ground isolation shielding attachments 2024 of zones 2002 and 2004 (e.g., of the ground shielding attachment structures) (such as of pattern 2205 , pattern 2208 , pattern 2255 and pattern 2258 ) provide an electrical ground isolation shield between two data signal contacts within one field (e.g., zone) of one type (e.g., RX or TX) of data signal attachment structures (e.g., bumps 2034 or 2044 ) formed onto or physically attached to data signal surface contacts (e.g., contacts 2030 or 2040 ) of a top level L 1 or top layer 2110 of a package device (e.g., device 2000 , 2001 , 2200 and 2201 ).

In some cases, the ground shielding attachment structures 2024 of zone 2002 , zone 2004 , pattern 2205 , pattern 2208 , pattern 2255 and pattern 2258 provide electrical ground isolation shielding between each data signal contact of zones 2002 and 2004 of level L 1 that reduces “die bump in-field” crosstalk between all adjacent ones of bumps 2034 or 2044 by being between those adjacent ones of bumps 2034 or 2044 above level L 1 .

In some cases, attachments 2024 (e.g., of zone 2002 , zone 2004 , pattern 2205 , pattern 2208 , pattern 2255 and pattern 2258 ) between data signal attachment structures 2034 in zone 2002 or 2044 in zone 2004 may each provide an electrical ground isolation shield between structures 2034 or 2044 of zones 2002 and 2004 above level L 1 that reduces “die bump in-field” crosstalk between all adjacent ones of (e.g., above layer 2110 ) structures 2034 or 2044 that attachments 2024 are between (e.g., by those attachments 2024 being in zone 2002 or 2004 and over level L 1 ).

In some cases, the solid conductive material ground shielding attachment structures 2020 of zones 2002 and 2004 (e.g., of the ground shielding attachment structures) (such as of pattern 2205 , pattern 2208 , pattern 2255 and pattern 2258 ) provide an electrical ground isolation shield between two data signal contacts within one field (e.g., zone) of one type (e.g., RX or TX) of data signal surface contacts (e.g., contacts 2030 or 2040 ) of a top level L 1 or top layer 2110 of a package device (e.g., device 2000 , 2001 , 2200 and 2201 ).

In some cases, the ground shielding attachment contacts of zone 2002 , zone 2004 , pattern 2205 , pattern 2208 , pattern 2255 and pattern 2258 provide electrical ground isolation shielding between each data signal contact of zones 2002 and 2004 of level L 1 that reduces “die contact in-field” crosstalk between all adjacent ones of (e.g., of layer 2110 ) contacts 2030 and 2040 by being between those adjacent ones of contacts 2030 and 2040 of level L 1 .

In some cases, structures 2020 (e.g., of zone 2002 , zone 2004 , pattern 2205 , pattern 2208 , pattern 2255 and pattern 2258 ) between data signal contacts 2030 in zone 2002 or 2044 in zone 2004 may each provide an electrical ground isolation shield between contacts 2030 or 2040 of zones 2002 and 2004 of level L 1 that reduces “die contact in-field” crosstalk between all adjacent ones of (e.g., of layer 2110 ) contacts 2030 or 2040 that contacts 2020 are between (e.g., by those contacts 2020 being in zone 2002 or 2004 of level L 1 ).

For example, by being conductive material electrically connected to the ground, attachments 2024 and contacts 2020 of zones 2007 and 2009 may provide electrically grounded structure that absorbs, or shields electromagnetic crosstalk signals produced by one of attachments 2034 or contacts 2030 (e.g., of zone 2002 or beyond side 2081 ) from reaching a widthwise adjacent (e.g., of zone 2004 or beyond side 2083 ) one of attachments 2044 and contacts 2040 , due to the amount of grounded conductive material, and location of the conductive grounded material adjacent to (e.g., between) that one of attachments 2034 or contacts 2030 and the widthwise adjacent one of attachments 2044 and contacts 2040 .

In some cases, attachments 2024 and contacts 2020 reduce electrical crosstalk caused by undesired capacitive, inductive, or conductive coupling of a first signal received or transmitted through (or existing on) one of attachments 2034 or contacts 2030 effecting or being mirrored in a second signal received or transmitted through (or existing on) one of attachments 2044 or contacts 2040 . Such electrical crosstalk may include interference caused by two signals becoming partially superimposed on each other due to electromagnetic (inductive) or electrostatic (capacitive) coupling between the contacts (e.g., conductive material) carrying the signals. Such electrical crosstalk may include where the magnetic field from changing current flow of a first data signal in one of attachments 2034 or contacts 2030 induces current a second data signal in