Semiconductor memory device

This application is based upon and claims the benefit of priority from U.S. Provisional Patent Application 62/393,261 filed on Sep. 12, 2016; the entire contents of which are incorporated herein by reference.

Embodiments described herein relate generally to a semiconductor memory device

A three-dimensional structure memory device is proposed in which memory holes are formed in a stacked body of a plurality of electrode layers on a substrate, and in which a charge storage film and a channel extending in the stacked direction of the electrode layers are provided in the memory holes. The electrode layers are formed by a metal material being buried in the stacked body via slits, etc. Thereafter, interconnect portions are formed in the slits, and the substrate and the interconnect portions are electrically connected.

FIG. 1 is a perspective view showing a semiconductor memory device according to a first embodiment;

FIG. 2 is a plan view showing the semiconductor memory device according to the first embodiment;

FIG. 3 is a sectional view taken along a line A-A of FIG. 2 ;

FIG. 4A is a sectional view taken along a line B-B of FIG. 2 ;

FIG. 4B is a plan view showing a part of the semiconductor memory device according to the first embodiment;

FIG. 5A and FIG. 5B , FIG. 6A and FIG. 6B , FIG. 7 , and FIG. 8A and FIG. 8B to FIG. 15A and FIG. 15B are each a view showing a method for manufacturing the semiconductor memory device according to the first embodiment;

FIG. 16 and FIG. 17 are each a sectional view showing a semiconductor memory device according to a variation of the first embodiment;

FIG. 18 is a perspective view showing a semiconductor memory device according to a second embodiment; and

FIG. 19 is a sectional view showing a part of a semiconductor memory device according to a third embodiment.

According to one embodiment, a semiconductor memory device includes a substrate, a stacked body, a plurality of columnar portions, and an interconnect portion. The stacked body is provided on the substrate and includes a plurality of electrode layers separately stacked each other. The plurality of columnar portions is provided in the stacked body, and each of the plurality of columnar portions includes a semiconductor portion extending in a stacking direction of the plurality of electrode layers and a charge storage film provided between the semiconductor portion and the stacked body. The interconnect portion is provided in the stacked body and extends in the stacking direction and a first direction crossing the stacking direction. The interconnect portion includes a first portion located in a first region of the stacked body that the plurality of columnar portions is provided and a second portion located in a second region of the stacked body adjacent to the first region in the first direction, the first portion having a first width, the second portion having a second width larger than the first width.

Hereinafter, embodiments will be described with reference to the drawings. Incidentally, in the respective drawings, the same elements are denoted by the same reference numerals.

First Embodiment

FIG. 1 is a perspective view showing a semiconductor memory device 1 according to a first embodiment.

As shown in FIG. 1 , in the semiconductor memory device 1 , a substrate 10 is provided. The substrate 10 contains, for example, silicon (Si).

Incidentally, in the specification, two directions parallel to an upper surface 10 a of the substrate 10 and also orthogonal to each other are referred to as X-direction and Y-direction, and a direction orthogonal to both X-direction and Y-direction is referred to as Z-direction.

The semiconductor memory device 1 includes a stacked body 15 , a columnar portion CL, and an interconnect portion 18 . The stacked body 15 is provided on the substrate 10 . The stacked body 15 includes a plurality of electrode layers 41 and a plurality of insulating layers 40 . In the plurality of electrode layers 41 , the electrode layer 41 located in a lowermost layer is a source-side selection gate SGS and is provided on the substrate 10 through the insulating layer 40 . In the plurality of electrode layers 41 , the electrode layer 41 located in an uppermost layer is a drain-side selection gate SGD. In the plurality of electrode layers 41 , the electrode layers 41 provided between the electrode layer 41 which is the lowermost layer (source-side selection gate SGS) and the electrode layer 41 which is the uppermost layer (drain-side selection gate SGD) are word lines WL. The number of stacked electrode layers 40 is arbitrary. A plurality of source-side selection gates SGS and a plurality of drain-side selection gates SGD may be formed.

The insulating layer 40 is provided between the respective electrode layers 41 . The insulating layer 40 contains, for example, silicon oxide (SiO).

At a crossing portion between the source-side selection gate SGS and the columnar portion CL, a source-side selection transistor STS is formed, and at a crossing portion between the drain-side selection gate SGD and the columnar portion CL, a drain-side selection transistor STD is formed. Further, at a crossing portion between the word line WL and the columnar portion CL, a memory cell MC is formed.

In the source-side selection transistor STS, the source-side selection gate SGS functions as a gate, and in the drain-side selection transistor STD, the drain-side selection gate SGD functions as a gate. Further, in the memory cell MC, the word line WL functions as a gate, and a part of the columnar portion CL functions as a channel. A plurality of memory cells MC is connected in series through the columnar portion CL between the source-side selection transistor STS and the drain-side selection transistor STD.

A plurality of columnar portions CL is provided in the stacked body 15 . The columnar portions CL extend in the Z-direction in the stacked body 15 .

On an upper side of the columnar portions CL, a plurality of bit lines BL extending in the Y-direction is provided. The bit lines BL are located on an upper side of the stacked body 15 . The bit lines BL are connected to the columnar portions CL through contact portions V 1 and Cb. In the contact portion Cb, an upper end thereof is connected to the contact portion V 1 , and a lower end thereof is connected to the columnar portion CL. The contact portion Cb is formed of a conductor such as a metal. Incidentally, in FIG. 1 , illustration of the contact portion V 1 is omitted.

A plurality of interconnect portions 18 is provided in the stacked body 15 . The plurality of interconnect portions 18 is disposed spaced from each other along the Y-direction, and extends in the Z-direction and X-direction in the stacked body 15 . A lower end of the interconnect portion 18 is in contact with the substrate 10 .

On an upper side of the interconnect portions 18 , a lower layer source line SL 1 and an upper layer source line SL 2 , each extending in the Y-direction are provided. The lower layer source line SL 1 is connected to the interconnect portions 18 through contact portions Cs. In the contact portion Cs, an upper end thereof is connected to the lower layer source line SL 1 , and a lower end thereof is connected to the interconnect portions 18 . The contact portion Cs is formed of a conductor such as a metal.

The upper layer source line SL 2 is connected to the lower layer source line SL 1 through a contact (not shown). For example, the upper layer source line SL 2 is located in the same layer as the bit lines BL.

By the interconnect portions 18 , the lower layer source line SL 1 , and the upper layer source line SL 2 , a source line SL is formed.

FIG. 2 shows a plane in which the electrode layer 41 of the stacked body 15 is extracted. FIG. 3 and FIG. 4A are cross sections taken along the line A-A and the line B-B of FIG. 2 , respectively, and each show a cross section of lower layers of the stacked body 15 . FIG. 4B shows a part of the interconnect portion 18 in FIG. 2 .

As shown in FIG. 2 , in the semiconductor memory device 1 , a memory cell region Rmc and a contact region Rc are provided. The contact region Rc is arranged contiguous to the memory cell region Rmc in the X-direction. For example, the memory cell region Rmc and the contact region Rc are alternately arranged along the X-direction. For example, a width Wr in the X-direction of the contact region Rc is approximately 400 nm.

The stacked body 15 is provided in the memory cell region Rmc and the contact region Rc.

As shown in FIG. 3 , the electrode layer 41 of the stacked body 15 includes a main body portion 41 A and a peripheral portion 41 B. The main body portion 41 A contains, for example, a metal such as tungsten (W). The peripheral portion 41 B is a barrier metal layer which covers a surface of the main body portion 41 A. The peripheral portion 41 B contains, for example, titanium nitride (TiN).

As shown in FIG. 2 , the columnar portions CL are provided in the memory cell region Rmc. The columnar portions CL are formed, for example, in a circular columnar shape or an elliptical columnar shape. The columnar portion CL is not provided in the contact region Rc.

As shown in FIG. 3 , the columnar portion CL includes a core portion 50 , a channel 20 , and a memory film 24 . The core portion 50 contains, for example, silicon oxide. A shape of the core portion 50 is, for example, a circular columnar shape. On an upper end of the core portion 50 , a contact plug (not shown) formed of polysilicon or the like is provided. A periphery of the contact plug is surrounded by the channel 20 , and an upper end thereof is connected to the contact portion Cb.

The channel 20 is provided around the core portion 50 . The channel 20 is a semiconductor portion and includes a body 20 a and a cover layer 20 b . A shape of the body 20 a is, for example, a bottomed cylindrical shape. The cover layer 20 b is provided around the body 20 a . A shape of the cover layer 20 b is, for example, a cylindrical shape.

The body 20 a and the cover layer 20 b contain silicon, for example, polysilicon obtained by crystallization of amorphous silicon.

A lower end of the channel 20 is in contact with the substrate 10 . For example, the body 20 a of the channel 20 is in contact with a connection member 10 b formed in the substrate 10 . The connection member 10 b is a member formed over an inner portion of the stacked body 15 from an inner portion of the substrate 10 , and is a member formed by, for example, epitaxially growing silicon.

The memory film 24 is provided around the channel 20 . The memory film 24 includes a tunnel insulating film 21 , a charge storage film 22 , and an insulating film 23 a . The tunnel insulating film 21 is provided around the channel 20 . The tunnel insulating film 21 contains, for example, silicon oxide. A shape of the tunnel insulating film 21 is, for example, a cylindrical shape.

The charge storage film 22 is provided around the tunnel insulating film 21 . The charge storage film 22 contains, for example, silicon nitride (SiN). A shape of the charge storage film 22 is, for example, a cylindrical shape. At a crossing portion between the channel 20 and the word line WL, a memory cell MC including the charge storage film 22 is formed.

The tunnel insulating film 21 is a potential barrier between the charge storage film 22 and the channel 20 . In the tunnel insulating film 21 , when a charge moves from the channel 20 to the charge storage film 22 (writing operation), and when a charge moves from the charge storage film 22 to the channel 20 (erasing operation), the charge tunnels.

The charge storage film 22 has a trap site which traps a charge in the film. A threshold of the memory cell MC changes depending on the presence or absence of a charge trapped by the trap site, and the amount of a trapped charge. Thereby, the memory cell MC holds information.

The insulating film 23 a is provided around the charge storage film 22 . The insulating film 23 a contains, for example, silicon oxide. The insulating film 23 a protects, for example, the charge storage film 22 from etching when forming the electrode layer 41 .

On an outside of the insulating film 23 a , an insulating film 23 b is provided. The insulating film 23 b is located between the insulating film 23 a and the electrode layer 41 , and between the insulating layer 40 and the electrode layer 41 . The insulating film 23 b contains, for example, aluminum oxide (AlO). By the insulating films 23 a and 23 b , a block insulating film 23 is formed.

As shown in FIG. 2 , the interconnect portion 18 is provided in the memory cell region Rmc and the contact region Rc, and extends in the X-direction. The interconnect portion 18 includes a plate-shaped portion 18 a , a wide portion 18 b , and a connection portion 18 c.

The plate-shaped portion 18 a is located in the memory cell region Rmc, and the wide portion 18 b and the connection portion 18 c are located in the contact region Rc. The wide portion 18 b is located between the connection portions 18 c , and the connection portion 18 c is located between the plate-shaped portion 18 a and the wide portion 18 b . The connection portion 18 c may not be provided in the contact region Rc, and in this case, the interconnect portion 18 is formed of the plate-shaped portion 18 a and the wide portion 18 b.

The wide portion 18 b is a portion having a width which expands in the Y-direction of the interconnect portion 18 as compared with the plate-shaped portion 18 a and the connection portion 18 c . The wide portion 18 b includes at least one convex portion 18 b 1 protruding from the connection portion 18 c . In an example shown in FIG. 2 , the wide portion 18 b includes two convex portions 18 b 1 protruding to both sides of the Y-direction. In this case, in the interconnect portions 18 disposed adjacent to each other in the Y-direction, the convex portion 18 b 1 provided in one interconnect portion 18 may face the convex portion 18 b 1 provided in the other interconnect portion 18

A shape of the convex portion 18 b 1 is, for example, a rectangular parallelepiped shape. An outer rim of the convex portion 18 b 1 may have an arc.

A width W 1 in the Y-direction of the wide portion 18 b is larger than a width W 2 in the Y-direction of the plate-shaped portion 18 a . The width W 1 in the Y-direction of the wide portion 18 b is larger than a width in the Y-direction of the connection portion 18 c . The width in the Y-direction of the connection portion 18 c is substantially the same as the width W 2 in the Y-direction of the plate-shaped portion 18 a.

In the contact region Rc, the wide portion 18 b is provided in the interconnect portion 18 , and therefore, the electrode layer 41 includes electrode portions 41 a and 41 b having mutually different widths in the Y-direction.

The electrode portion 41 a is a portion of the electrode layer 41 which is located between the connection portion 18 c of one interconnect portion 18 and the connection portion 18 c of the other interconnect portion 18 in the interconnect portions 18 disposed adjacent to each other in the Y-direction.

The electrode portion 41 b is a portion of the electrode layer 41 which is located between the wide portion 18 b of one interconnect portion 18 and the wide portion 18 b of the other interconnect portion 18 in the interconnect portions 18 disposed adjacent to each other in the Y-direction. That is, the electrode portion 41 b is located between the convex portions 18 b 1 provided in two interconnect portions 18 .

A width W 4 in the Y-direction of the electrode portion 41 b is smaller than a width W 3 in the Y-direction of the electrode portion 41 a.

On the other hand, in the memory cell region Rmc, the electrode layer 41 includes an electrode portion 41 c . For example, a width in the Y-direction of the electrode portion 41 c corresponds to a net width of the electrode layer 41 obtained by subtracting a total value of a width Wc 1 of the columnar portion CL disposed along the Y-direction from the width W 3 of the electrode portion 41 a . In the example shown in FIG. 2 , the width in the Y-direction of the electrode portion 41 c is a sum of the widths of a width W 5 of the electrode layer 41 between the interconnect portion 18 and a columnar portion CL 1 , a width W 6 of the electrode layer 41 between the interconnect portion 18 and a columnar portion CL 2 , and a width W 7 of the electrode layer 41 between the columnar portions CL 1 and CL 2 .

The width W 4 in the Y-direction of the electrode portion 41 b is desirably set to not smaller than the width in the Y-direction of the electrode portion 41 c . In this case, as shown in FIG. 3 , when a thickness in the Z-direction of the electrode layer 41 is represented by W 8 , a sectional area of a Y-Z cross section of the electrode portion 41 b is represented by a product of the width W 4 in the Y-direction of the electrode portion 41 b by the thickness W 8 in the Z-direction of the electrode layer 41 . On the other hand, a sectional area of a Y-Z cross section of the electrode portion 41 c is represented by a product of the width in the Y-direction of the electrode portion 41 c by the thickness W 8 in the Z-direction of the electrode layer 41 . Then, the sectional area of the Y-Z cross section of the electrode portion 41 b becomes not smaller than the sectional area of the Y-Z cross section of the electrode portion 41 c.

By setting the widths of the electrode portions 41 b and 41 c in this manner, the width of the electrode layer 41 (the sectional area of the electrode layer 41 ) does not become smaller in the contact region Rc than in the memory cell region Rmc, and therefore, in the electrode layer 41 in which a current flows in the X-direction, an increase in a resistance value of the electrode portion 41 b is suppressed. Therefore, this prevents a current from becoming difficult to flow in the electrode layer 41 .

As shown in FIG. 3 , FIG. 4A , and FIG. 4B , the interconnect portion 18 includes a conductive portion 18 A, a conductive portion 18 B, and a peripheral portion 18 C.

As shown in FIG. 3 , the conductive portion 18 A is provided on a lower side of the plate-shaped portion 18 a of the interconnect portion 18 , and the conductive portion 18 B is provided on an upper side of the plate-shaped portion 18 a of the interconnect portion 18 . The conductive portion 18 B is provided on the conductive portion 18 A.

As shown in FIG. 4A and FIG. 4B , the conductive portion 18 A is provided on an outside of the wide portion 18 b of the interconnect portion 18 , and the conductive portion 18 B is provided on an inside of the wide portion 18 b of the interconnect portion 18 . The conductive portion 18 A is provided along a bottom surface 18 s 1 and an inner wall surface 18 s 2 of the convex portion 18 b 1 . Further, in the convex portion 18 b 1 , the conductive portion 18 A covers the conductive portion 18 B.

A sectional area of a Y-Z cross section of the conductive portion 18 B in the wide portion 18 b is larger than a sectional area of a Y-Z cross section of the conductive portion 18 B in the plate-shaped portion 18 a.

The conductive portion 18 A contains, for example, silicon. The silicon is, for example, polysilicon obtained by crystallization of amorphous silicon. The conductive portion 18 B contains, for example, tungsten.

As shown in FIG. 3 , in the plate-shaped portion 18 a of the interconnect portion 18 , the peripheral portion 18 C is provided on a bottom surface and on a side surface of the conductive portion 18 A, and also on a side surface of the conductive portion 18 B. The peripheral portion 18 C covers the conductive portions 18 A and 18 B.

As shown in FIGS. 4A and 4B , in the wide portion 18 b of the interconnect portion 18 , the peripheral portion 18 C is provided on a bottom surface and on a side surface of the conductive portion 18 A. The peripheral portion 18 C covers the conductive portion 18 A.

The peripheral portion 18 C includes, for example, layers 18 C 1 and 18 C 2 . A surface of the layer 18 C 1 is covered with the layer 18 C 2 . The layer 18 C 1 contains, for example, titanium nitride (TiN). The layer 18 C 2 contains, for example, titanium (Ti). For example, by the layers 18 C 1 and 18 C 2 , a barrier metal layer is formed.

Around the interconnect portion 18 , a side wall 19 having an insulating property is provided. The side wall 19 includes insulating films 19 a and 19 b . The insulating film 19 a is provided around the interconnect portion 18 , and the insulating film 19 b is provided around the insulating film 19 a . The insulating films 19 a and 19 b contain, for example, silicon oxide. By the side wall 19 , the interconnect portion 18 is electrically insulated from the electrode layer 41 of the stacked body 15 .

A lower end of the interconnect portion 18 is in contact with the substrate 10 . For example, a lower end of the interconnect portion 18 is in contact with a connection member 10 c formed in the substrate 10 . The connection member 10 c is a member formed in the substrate 10 , and is formed by, for example, doping an impurity such as boron (B) into the substrate 10 .

As shown in FIG. 2 , on an upper end of the interconnect portion 18 , a plurality of contact portions Cs is provided. The plurality of contact portions Cs is located in the contact region Rc. The number or arrangement of the contact portions Cs is arbitrary. In the example shown in FIG. 2 , the contact portions Cs are located on the wide portion 18 b and on the connection portion 18 c of the contact region Rc. The contact portions Cs may be located only on the wide portion 18 b.

In the memory cell region Rmc, at a crossing portion between the channel 20 and the word line WL, a memory cell MC including a charge storage film 22 is formed, and a plurality of memory cells MC is arranged in a three-dimensional matrix along the X-direction, Y-direction, and Z-direction. In the memory cell region Rmc, a predetermined potential is applied to the electrode layer 41 and the bit line BL, and in the contact region Rc, a predetermined potential is applied to the source line SL. By doing this, data can be stored in each memory cell MC.

Hereinafter, a method for manufacturing the semiconductor memory device 1 according to the first embodiment will be described.

First, with reference to FIG. 5A and FIG. 5B , and FIG. 6A and FIG. 6B , a process for manufacturing a columnar portion CL will be described.

FIG. 5A and FIG. 6A are each a view showing a process for manufacturing the region shown in FIG. 2 . FIG. 5B and FIG. 6B show cross sections taken along a line C-C of FIG. 5A and a line D-D of FIG. 6A , respectively, and are each a view showing a process for manufacturing the region shown in FIG. 3 .

As shown in FIG. 5A and FIG. 5B , an insulating layer 40 and a sacrifice layer 60 are alternately stacked along the Z-direction on a substrate 10 by, for example, a CVD (Chemical Vapor Deposition) method, whereby a stacked body 15 a is formed. The insulating layer 40 is formed of, for example, silicon oxide. The sacrifice layer 60 is formed of a material having an etching selection ratio with respect to the insulating layer 40 , and is formed of, for example, silicon nitride.

Subsequently, a plurality of memory holes MH is formed in the stacked body 15 a by, for example, RIE (Reactive Ion Etching). The memory holes MH extend in the Z-direction and pierce the stacked body 15 a to reach the substrate 10 . For example, a part of the substrate 10 is removed, and a bottom surface of the memory hole MH is located on a lower side of the stacked body 15 a . As shown in FIG. 5A , a shape of the memory hole MH is, for example, a circle when it is viewed from the Z-direction.

As shown in FIG. 6A and FIG. 6B , after forming the memory holes MH, for example, a connection member 10 b is formed over an inner portion of the stacked body 15 a from an inner portion of the substrate 10 by epitaxially growing silicon.

Subsequently, by, for example, a CVD method, an insulating film 23 a is formed by depositing silicon oxide on an inner surface of the memory hole MH, a charge storage film 22 is formed by depositing silicon nitride, and a tunnel insulating film 21 is formed by depositing silicon oxide. Subsequently, a cover layer 20 b is formed by depositing silicon. Thereafter, by performing RIE, the cover layer 20 b , the tunnel insulating film 21 , the charge storage film 22 , and the insulating film 23 a are removed, whereby the substrate 10 (connection member 10 b ) is exposed. By doing this, a memory film 24 is formed.

Subsequently, a body 20 a is formed by depositing silicon in the memory hole MH. By doing this, a channel 20 including the body 20 a and the cover layer 20 b is formed. Subsequently, a core portion 50 is formed by depositing silicon oxide. By doing this, a columnar portion CL including the core portion 50 , the channel 20 , and the memory film 24 is formed. The body 20 a of the channel 20 is in contact with the connection member 10 b formed in the substrate 10 .

Next, with reference to FIG. 7 , FIG. 8A and FIG. 8B to FIG. 11A and FIG. 11B , a process for manufacturing an interconnect portion 18 will be described.

FIG. 7 shows a plane in which the insulating layer 40 of the stacked body 15 a is extracted. FIG. 8A and FIG. 8B to FIG. 11A and FIG. 11B are each a view showing a process for manufacturing lower layers of the stacked bodies 15 a and 15 .

Incidentally, FIG. 8A and FIG. 8B show cross sections taken along a line E-E and a line F-F of FIG. 7 , respectively. FIG. 9A to FIG. 11A each show continuation of the process for manufacturing the region shown in FIG. 8A , and FIG. 9B to FIG. 11 B each show continuation of the process for manufacturing the region shown in FIG. 8B .

As shown in FIG. 7 , FIG. 8A , and FIG. 8B , a plurality of slits ST extending in the X-direction is formed in the stacked body 15 a by, for example, a photolithography method and RIE. The slits ST are made to pierce the stacked body 15 a . By doing this, the stacked body 15 a is divided into a plurality of stacked bodies extending in the X-direction by the slits ST. Each region separated by the slits ST is called “block”. The columnar portion CL selected one by one from each block is electrically connected to one bit line BL (see FIG. 1 ).

Further, in the slit ST, in a region (contact region Rc) in which the columnar portion CL is not disposed, a wide portion ST 1 having a width which expands in the Y-direction as compared with the other portions is formed. For example, the wide portion ST 1 is formed by a photolithography method and etching using a mask having a width which is partially different in the Y-direction. A width W 9 of the wide portion ST 1 is larger than a width W 10 of a plate-shaped portion ST 2 of the slit ST. Since the wide portion ST 1 is formed in the slit ST as shown in FIG. 7 , portions having mutually different widths in the Y-direction are formed in the insulating layer 40 . Such a portion is formed also in the sacrifice layer 60 .

Subsequently, by performing wet etching through the slit ST, the sacrifice layer 60 is removed. In a case where the sacrifice layer 60 is formed of silicon nitride, an etching treatment is performed using phosphoric acid as an etchant. By removing the sacrifice layer 60 through the slit ST, a cavity 62 is formed.

Since the wide portion ST 1 is formed in the slit ST, as indicated by an arrow al in FIG. 7 , the etchant penetrates into the stacked body 15 a through the wide portion ST 1 from the ±X-direction and the ±Y-direction. On the other hand, in a case where the wide portion ST 1 is not formed, that is, in a case where the slit ST is formed only of the plate-shaped portion ST 2 , the etchant penetrates into the stacked body 15 a through the slit ST (plate-shaped portion ST 2 ) from the ±Y-direction. Therefore, in a case where the wide portion ST 1 is formed in the slit ST, the etchant easily penetrates into the stacked body 15 a , and therefore, the sacrifice layer 60 is easily removed. According to this, the sacrifice layer 60 is prevented from remaining in the stacked body 15 a without being removed. As shown in FIG. 9A and FIG. 9B , an insulating film 23 b is formed by depositing aluminum oxide on an inner surface of the cavity 62 by, for example, a CVD method. By doing this, a block insulating film 23 including the insulating films 23 a and 23 b is formed. Thereafter, by, for example, a CVD method, a peripheral portion 41 B is formed by depositing titanium nitride on the insulating film 23 b , and a main body portion 41 A is formed by depositing a metal material such as tungsten on the peripheral portion 41 B. By doing this, an electrode layer 41 including the main body portion 41 A and the peripheral portion 41 B is formed. Further, a stacked body 15 in which the insulating layer 40 and the electrode layer 41 are alternately stacked is formed.

Since the wide portion ST 1 is formed in the slit ST, a metal material is more easily deposited in the cavity 62 as compared with a case where the wide portion ST 1 is not formed, that is, in a case where the slit ST is formed only of the plate-shaped portion ST 2 . According to this, generation of a gap without depositing a metal material in the cavity 62 can be suppressed.

As shown in FIG. 10A and FIG. 10B , an impurity such as boron is doped into a surface, which is a bottom surface of the slit ST, and on which the substrate 10 is exposed. By doing this, a connection member 10 c is formed. The impurity is doped by, for example, ion implantation.

Subsequently, silicon oxide is deposited by, for example, a CVD method, and thereafter, a silicon oxide film is removed by performing RIE, whereby the substrate 10 (connection member 10 c ) is exposed. By doing this, a side wall 19 including insulating films 19 a and 19 b is formed.

As shown in FIG. 11A and FIG. 11B , a layer 18 C 2 is formed by depositing a metal material such as titanium on the side wall 19 , and thereafter, a layer 18 C 1 is formed by depositing titanium nitride on the layer 18 C 2 . By doing this, a peripheral portion 18 C including the layers 18 C 1 and 18 C 2 is formed.

Subsequently, by, for example, a CVD method, a conductive portion 18 A is formed by depositing silicon on the peripheral portion 18 C, and thereafter a conductive portion 18 B is formed by depositing a metal material such as tungsten. By doing this, an interconnect portion 18 including the conductive portions 18 A and 18 B is formed.

As shown in FIG. 7 , in the slit ST, the width W 9 of the wide portion ST 1 is larger than the width W 10 of the plate-shaped portion ST 2 . According to this, the conductive portion 18 A is formed in a lower part of the plate-shaped portion ST 2 so as to block up the plate-shaped portion ST 2 as shown in FIG. 11A , and is formed along a bottom surface and an inner surface of the wide portion ST 1 as shown in FIG. 11B . Thereafter, the conductive portion 18 B is formed in an upper part of the plate-shaped portion ST 2 so as to block up the plate-shaped portion ST 2 as shown in FIG. 11A , and is formed so as to block up the wide portion ST 1 as shown in FIG. 11B .

Therefore, in the wide portion ST 1 and the plate-shaped portion ST 2 , the conductive portions 18 A and 18 B are formed in different forms. Incidentally, the interconnect portion 18 formed in the wide portion ST 1 corresponds to the wide portion 18 b , and the interconnect portion 18 formed in the plate-shaped portion ST 2 corresponds to the plate-shaped portion 18 a and the connection portion 18 c.

Next, with reference to FIG. 12A and FIG. 12B to FIG. 15A and FIG. 15B , a process for manufacturing contact portions Cb, Cs, and V 1 , a lower layer source line SL 1 , and an upper layer source line SL 2 will be described.

FIG. 12A to FIG. 15A are each a view showing a process for manufacturing the region shown in FIG. 2 . FIG. 12B to FIG. 15 B show the regions shown in FIG. 12A to FIG. 15A in perspective, respectively. Incidentally, in FIG. 15A and FIG. 15B , illustration of the bit line BL is omitted.

As shown in FIG. 12A and FIG. 12B , after an insulating layer (not shown) is formed on the columnar portion CL and the interconnect portion 18 , a contact hole piercing the insulating layer is formed immediately above the columnar portion CL and the interconnect portion 18 . Thereafter, a metal material such as tungsten is buried in the contact hole, whereby contact portions Cb and Cs are formed. A lower end of the contact portion Cb is connected to the columnar portion CL, and a lower end of the contact portion Cs is connected to the interconnect portion 18 . For example, on the wide portion 18 b of the interconnect portion 18 , the contact portion Cs is formed. Since the wide portion 18 b having a width which expands in the Y-direction is formed, the degree of freedom of the formation position of the contact portion Cs is high.

As shown in FIG. 13A and FIG. 13B , on the contact portion Cs, a lower layer source line SL 1 is formed of a conductor such as a metal. The lower layer source line SL 1 extends in the Y-direction so as to cover the wide portion 18 b of the interconnect portion 18 , and a lower end thereof is connected to an upper end of the contact portion Cs. On a lower side of the lower layer source line SL 1 , the columnar portion CL and the contact portion Cb are not located.

As shown in FIG. 14A and FIG. 14B , after an insulating layer (not shown) is formed on the contact portion Cb, a contact hole piercing the insulating layer is formed immediately above the contact portion Cb, and then, a metal material such as tungsten is buried in the contact hole, whereby a contact portion V 1 is formed. A lower end of the contact portion V 1 is connected to an upper end of the contact portion Cb. Incidentally, the contact portion V 1 is located on an upper side of the lower layer source line SL 1 .

As shown in FIG. 15A and FIG. 15B , after a contact (not shown) is formed on the lower layer source line SL 1 , an upper layer source line SL 2 is formed of a conductor such as a metal on the contact. The upper layer source line SL 2 extends in the Y-direction, and a lower end thereof is connected to an upper end of the lower layer source line SL 1 through the contact. On a lower side of the upper layer source line SL 2 , the columnar portion CL and the contact portion Cb are not located.

Thereafter, a bit line BL (see FIG. 1 ) which is connected to the contact portion V 1 is formed.

In this manner, the semiconductor memory device 1 according to the first embodiment is formed.

In the semiconductor memory device 1 according to the embodiment, the interconnect portion 18 extends in the Z-direction and X-direction, and includes the wide portion 18 b having a width which expands in the Y-direction in the contact region Rc in which the columnar portion CL is not provided. A volume of the interconnect portion 18 increases in the wide portion 18 b , and therefore, a resistance of the interconnect portion 18 can be decreased as compared with a case where the interconnect portion 18 does not include the wide portion 18 b , for example, in a case where the interconnect portion 18 is formed only of the plate-shaped portion 18 a . According to this, a current easily flows in the source line SL including the interconnect portion 18 .

Further, in a case where a part of the interconnect portion 18 is formed of a non-metallic material for reducing warpage of the substrate 10 , a volume of a conductive portion containing tungsten or the like can be increased in the wide portion 18 b . That is, the conductive portion 18 A of a non-metallic material is formed on a lower side of the plate-shaped portion 18 a and on an outer side of the wide portion 18 b , and the conductive portion 18 B of a metal material is formed on an upper side of the plate-shaped portion 18 a and on an inner side of the wide portion 18 b . Therefore, the form of the formation of the conductive portion 18 B is different between the plate-shaped portion 18 a and the wide portion 18 b , and a volume of the conductive portion 18 B in the wide portion 18 b is increased, and therefore, a resistance of the interconnect portion 18 can be decreased.

The wide portion 18 b is provided partially in the interconnect portion 18 by being located in the contact region Rc. Therefore, even if the volume of the conductive portion 18 B of a metal material is increased in the wide portion 18 b , an effect on the warpage of the substrate 10 can be reduced. Further, in a case where a plurality of semiconductor memory devices 1 is formed by forming a structure body on a wafer including the substrate 10 , followed by dicing the wafer and the structure body, the warpage of the substrate 10 appears as the warpage of the wafer before dicing, and therefore, also an effect on the warpage of the wafer can be reduced.

Further, when the wide portion 18 b is provided in the interconnect portion 18 , the resistance of the interconnect portion 18 is decreased as compared with a case where the interconnect portion 18 does not include the wide portion 18 b , and therefore, even if a width Wr in the X-direction of the contact region Rc (see FIG. 2 ) is decreased, an effect on electrical characteristics of the interconnect portion 18 is small. According to this, a size of the semiconductor memory device 1 can be decreased. When the width Wr in the X-direction of the contact region Rc is decreased, for example, an effect on operational characteristics of the memory cell MC can be reduced as compared with a case where the width Wr is expanded for decreasing the resistance of the interconnect portion 18 .

Hereinafter, a variation of the first embodiment will be described.

FIG. 16 and FIG. 17 are each a sectional view showing a semiconductor memory device according to a variation of the first embodiment.

FIG. 16 and FIG. 17 are views showing the regions shown in FIG. 3 and FIG. 4A , respectively.

As shown in FIG. 16 and FIG. 17 , in a semiconductor memory device 2 according to the variation, an interconnect portion 18 includes an insulating portion 18 D, a conductive portion 18 E, and a peripheral portion 18 C unlike the configuration of the interconnect portion 18 (see FIG. 3 , FIG. 4A , and FIG. 4B ) described above. The insulating portion 18 D contains, for example, silicon oxide. The conductive portion 18 E contains, for example, tungsten. The peripheral portion 18 C includes, for example, layers 18 C 1 and 18 C 2 . The layers 18 C 1 and 18 C 2 are conductive layers, and contain, for example, titanium nitride and titanium, respectively.

As shown in FIG. 16 , the insulating portion 18 D is provided on a lower side of a plate-shaped portion 18 a of the interconnect portion 18 , and the conductive portion 18 E is provided on an upper side of the plate-shaped portion 18 a of the interconnect portion 18 . The conductive portion 18 E is provided on the insulating portion 18 D. The peripheral portion 18 C is provided on a bottom surface and on a side surface of the insulating portion 18 D and on a side surface of the conductive portion 18 E.

As shown in FIG. 17 , in a wide portion 18 b of the interconnect portion 18 , the conductive portion 18 E is provided, and the insulating portion 18 D is not provided. The peripheral portion 18 C is provided on a bottom surface and a side surface of the conductive portion 18 E.

In the variation, in the wide portion 18 b of the interconnect portion 18 , the conductive portion 18 E containing tungsten or the like is electrically connected to the substrate 10 through the peripheral portion 18 C. The bottom surface of the conductive portion 18 E expands as compared with the configuration of the interconnect portion 18 as shown in FIG. 3 , FIG. 4A , and FIG. 4B , and therefore, a contact resistance to the substrate 10 of the interconnect portion 18 can be decreased.

For example, in the configuration of the interconnect portion 18 shown in FIG. 3 , FIG. 4A , and FIG. 4B , a contact resistance to the substrate 10 of the interconnect portion 18 becomes substantially equal to a resistance of the layer 18 C 1 of the peripheral portion 18 C. On the other hand, in the configuration of the interconnect portion 18 of the variation, a contact resistance to the substrate 10 of the interconnect portion 18 is determined by a resistance of the layer 18 C 1 of the peripheral portion 18 C and a resistance of the conductive portion 18 E of the wide portion 18 b , and becomes smaller than the resistance of the layer 18 C 1 of the peripheral portion 18 C. Therefore, the contact resistance to the substrate 10 of the interconnect portion 18 is decreased.

Incidentally, the other effect of the variation is the same as that of the above-mentioned first embodiment.

Second Embodiment

FIG. 18 is a perspective view showing a semiconductor memory device according to a second embodiment.

As shown in FIG. 18 , in a semiconductor memory device 3 according to the embodiment, a subcell circuit 90 is provided between a substrate 10 and a stacked body 15 unlike the configuration of the semiconductor memory device 1 (see FIG. 1 ) according to the first embodiment described above.

In the semiconductor memory device 3 , an interlayer insulating film 81 , a source electrode film 82 , and an insulating layer 70 are provided between the substrate 10 and the stacked body 15 . The interlayer insulating film 81 and the insulating layer 70 contain, for example, silicon oxide, and the source electrode film 82 contains, for example, polysilicon doped with an impurity. A channel 20 of a columnar portion CL is in contact with, not the substrate 10 , but the source electrode film 82 . The source electrode film 82 is insulated from the substrate 10 by the interlayer insulating film 81 . Further, the source electrode film 82 is provided in common to a plurality of stacked bodies, and is, for example, further connected to a lower layer source line (not shown).

In an upper layer portion of the substrate 10 and the interlayer insulating film 81 , a subcell circuit 90 is provided. The subcell circuit 90 is a part of a driving circuit which performs writing, reading, and erasing of data with respect to a memory cell MC, and includes, for example, a sense amplifier.

For example, the upper layer portion of the substrate 10 is divided into a plurality of active areas by an STI (Shallow Trench Isolation) 84 , and in some active areas, an n-type MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) 85 is formed, and in the other active areas, a p-type MOSFET 86 is formed. Further, in the interlayer insulating film 81 , wirings 87 are provided in multiple stages, and a contact 88 for connecting the wiring 87 to the substrate 10 , and a via 89 for connecting the wirings 87 to each other are also provided. Incidentally, the n-type MOSFET 85 , the p-type MOSFET 86 , the wirings 87 , etc. in FIG. 18 are illustrated schematically, and the sizes and arrangement thereof do not necessarily match the sizes and arrangement of the actual elements.

In the slit ST of the semiconductor memory device 3 , the interconnect portion 18 described with reference to FIG. 1 is not provided, and also the lower layer source line SL 1 and the upper layer source line SL 2 to be connected to the interconnect portion 18 are not provided. In the slit ST, for example, an insulating body (not shown) is buried. To the source electrode film 82 , a potential necessary for driving is supplied from the subcell circuit 90 .

In the embodiment, the subcell circuit 90 is provided between the substrate 10 and the stacked body 15 . Since a space between the substrate 10 and the stacked body 15 can be effectively utilized, and therefore, an area of a circuit disposed around the stacked body 15 can be reduced by that amount.

Third Embodiment

FIG. 19 is a sectional view showing a part of a semiconductor memory device according to a third embodiment.

FIG. 19 is a Y-Z sectional view of a columnar portion CL 3 in an enlarged manner.

As shown in FIG. 19 , in a semiconductor memory device 4 according to the embodiment, a plurality of charge storage films 22 is provided for each electrode layer 41 unlike the configuration of the columnar portion CL (see FIG. 3 ) according to the first embodiment described above.

A columnar portion CL 3 includes a core portion 50 , a channel 20 , and a tunnel insulating film 21 . The channel 20 includes a body 20 a and a cover layer 20 b . A plurality of charge storage films 22 is provided for each electrode layer 41 . The charge storage films 22 are stacked through an insulating layer 40 . The charge storage films 22 contain, for example, silicon.

Also, a plurality of insulating films 23 a is provided in the same manner as the charge storage films 22 . The insulating film 23 a is provided between the charge storage film 22 and the insulating film 23 b , and between the insulating layer 40 and the charge storage film 22 .

Incidentally, an effect of the embodiment is the same as that of the above-mentioned first embodiment.

While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the inventions. Indeed, the novel embodiments described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the inventions. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the invention.