Inventor

Hideto Takekida

Inventor
Nagoya, JP

Overview

23→
Patents
2013–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 23 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary
H10BElectronic memory devices28%
H01LSemiconductor devices24%
H10DInorganic electric semiconductor devices18%
G11CStatic stores15%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%
PatentTitleYear
11,094,366Systems and methods to control semiconductor memory device in various timings202111,056,501Three-dimensional NAND memory device with source line comprising metallic and semiconductor layers202110,957,710Three dimensional semiconductor memory including pillars having joint portions between columnar sections202110,950,617Memory device with multiple layers202110,804,290Semiconductor device and method of manufacturing the same202010,770,117Semiconductor storage device202010,763,276Three dimensional semiconductor memory including pillars having joint portions between columnar sections202010,741,580Semiconductor memory device202010,607,935Memory device202010,475,806Semiconductor memory device including stacked body with conductivity and insulating members and method for manufacturing the same201910,109,578Semiconductor memory device20189,837,264Nonvolatile semiconductor memory device and method of manufacturing the same20179,830,961Nonvolatile semiconductor storage device including a discharge transistor for discharging a bit line to a source line20179,653,167'Semiconductor memory device using grounded dummy bit lines'20179,214,234'Nonvolatile semiconductor memory device and method of manufacturing the same'20159,048,328'Semiconductor device having plural memory cells with cavities formed therein, and method of manufacturing the same'20159,012,972'Nonvolatile semiconductor storage device and method of manufacturing the same'20158,994,090'Nonvolatile semiconductor storage device and method of manufacturing the same'20158,952,444'Semiconductor storage device and manufacturing method thereof'20158,760,935'Nonvolatile semiconductor memory device'20148,624,317'Nonvolatile semiconductor memory device and method for manufacturing same'20148,466,506'Nonvolatile semiconductor memory device and method of manufacturing the same'20138,427,876'Semiconductor storage device and control method thereof'2013

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2013–2017Patents assigned to TOSHIBA KK (10)· patent assignee history
2013–2015Patents assigned to TAKEKIDA HIDETO (5)· patent assignee history
2013–2021Based in Nagoya, JP· patent location history
2014Patents assigned to ARAI FUMITAKA (1)· patent assignee history
2014–2015Based in Aichi, JP· patent location history
2017–2021Patents assigned to TOSHIBA MEMORY CORP (12)· patent assignee history
2021Patents assigned to KIOXIA CORP (1)· patent assignee history
2021Based in Toyota-shi, Aichi-ken, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA MEMORY CORP122017–2021
TOSHIBA KK102013–2017
TAKEKIDA HIDETOself52013–2015
ARAI FUMITAKA12014
KIOXIA CORP12021
Locations
LocationPatentsSpan
Nagoya, JP192013–2021
Toyota-shi, Aichi-ken, JP22021
Aichi, JP22014–2015