Display apparatus and method of manufacturing the same

This application claims priority to Korean Patent Application No. 10-2011-0083603 filed on Aug. 22, 2011, and all the benefits accruing therefrom under 35 U.S.C. §119, the contents of which are herein incorporated by reference in its entirety.

1. Field of Invention

The invention relates to a display apparatus and a method of manufacturing the same. More particularly, the invention relates to a display apparatus having a touch sensor installed therein and a method of manufacturing the display apparatus.

2. Description of the Related Art

In general, a touch panel allows a user to select contents displayed on an image display apparatus using a finger or a stylus. The image display apparatus employing the touch panel detects a position touched by the user through the touch panel and carries out an operation corresponding to the contents of the touch position.

The touch panel is employed for a liquid crystal display. In this case, the touch panel is disposed on a liquid crystal display panel, on which an image is displayed, to detect position information corresponding to the input from the user. However, when the touch panel is separately prepared from the liquid crystal display panel and then attached to the liquid crystal display panel, optical properties of the liquid crystal display, such as brightness, viewing angle, etc., are deteriorated and the thickness of the liquid crystal display increases by the thickness of the touch panel.

Exemplary embodiments of the invention provide a display apparatus having an improved productivity.

Exemplary embodiments of the invention provide a method of manufacturing the display apparatus.

According to the exemplary embodiments, a display apparatus includes a display panel receiving a light to display an image, and at least one light generating part providing the light to the display panel.

The display panel includes a first substrate and a second substrate. The second substrate faces the first substrate. The second substrate includes a plurality of pixel units including a sensor sensing the light generated from the light generating part and reflected from an object disposed on the display panel, and a pixel. In addition, the display panel includes a light blocking member positioned at a position corresponding to an area in which the sensor is disposed to prevent the light generated from the light generating part from being directly incident to the sensor.

According to the exemplary embodiments, a method of manufacturing a display apparatus is provided as follows. A second substrate is formed to include a second base substrate in which a plurality of pixel unit areas including a pixel area and a sensor area is formed. Then, a first substrate is formed to include a first base substrate and a common electrode, and a liquid crystal layer is interposed between the first substrate and the second substrate. Next, a pixel and a sensor are respectively formed in the pixel area and the sensor area in each of the pixel unit areas, and a light blocking member is formed to correspond to the sensor area.

According to the above, since the sensor and the pixel are disposed on one substrate and the switching transistor and first to third transistors, which are arranged in the same row, are connected to one gate line, a manufacturing process for the display apparatus may be simplified. Thus, a manufacturing process time for the display apparatus may be reduced, thereby improving productivity of the display apparatus.

The above and other advantages of the invention will become readily apparent by reference to the following detailed description when considered in conjunction with the accompanying drawings wherein:

FIG. 1 is an exploded perspective view showing an exemplary embodiment of a display apparatus according to the invention;

FIG. 2 is a plan view showing an exemplary embodiment of a portion of a display panel shown in FIG. 1 ;

FIG. 3 is a plan view showing an exemplary embodiment of pixels and sensors shown in FIG. 2 ;

FIG. 4 is a cross-sectional view taken along line I-I′ shown in FIG. 3 ;

FIG. 5 is a cross-sectional view taken along line II-II′ shown in FIG. 3 ; and

FIGS. 6A to 6G are plan views showing an exemplary embodiment of a method of manufacturing a display apparatus according to the invention.

Hereinafter, the invention will be explained in detail with reference to the accompanying drawings.

FIG. 1 is an exploded perspective view showing an exemplary embodiment of a display apparatus according to the invention and FIG. 2 is a plan view showing a portion of a display panel shown in FIG. 1 .

Referring to FIGS. 1 and 2 , a display apparatus 10 includes a display panel 100 displaying an image and a backlight unit 200 providing a light to the display panel 100 as a light generating part.

The backlight unit 200 is disposed under the display panel 100 and includes first light sources emitting white lights and second light sources emitting infrared rays. The first light sources may be alternately arranged with the second light sources, and each of the first and second light sources may be a light emitting diode.

The display panel 100 includes a first substrate 110 , a second substrate 120 facing the first substrate 110 , and a liquid crystal layer (not shown) interposed between the first substrate 110 and the second substrate 120 . The second substrate 120 includes a plurality of pixel units PU. Each of the pixel units PU includes a sensor that detects the light emitted from the backlight unit 200 and reflected from an object disposed on the display panel 100 to output a sensing signal, and a pixel PX that displays the image.

The pixel units PU may be arranged in a matrix form. In addition, the pixel PX may include a plurality of sub-pixels S-PX 1 , S-PX 2 , and S-PX 3 arranged in a predetermined (e.g., first) direction to display different colors from each other. In the exemplary embodiment of FIG. 2 , for instance, the pixel PX may include first, second, and third sub-pixels S-PX 1 , S-PX 2 , and S-PX 3 to display three different colors from each other and the first, second, and third sub-pixels S-PX 1 , S-PX 2 , and S-PX 3 may display a red color, a green color, and a blue color, respectively. The display panel 100 may display one color using the pixel PX including the first, second, and third sub-pixels S-PX 1 , S-PX 2 , and S-PX 3 .

The sensor is disposed adjacent to one side of the pixel PX. In FIG. 2 , the sensor is disposed adjacent to a left side of the pixel PX, but it should not be limited thereto or thereby. That is, the sensor may be disposed adjacent to a right side of the pixel PX.

The sensor senses whether an object exists on the display panel 100 or not. In one exemplary embodiment, as an example, the sensor may be a photosensor that measures an amount of the light incident thereto to sense the existence of the object.

When a sensor included in one pixel unit PU of the pixel units PU is referred to as a first sensor S 1 , a sensor included in a pixel unit PU adjacent to the one pixel unit PU in a (e.g., second) direction substantially perpendicular to the (e.g., first) direction in which the first, second, and third sub-pixels S-PX 1 , S-PX 2 , and S-PX 3 are arranged may be referred to as a second sensor S 2 . The first sensor S 1 and the second sensor S 2 may sense different lights from each other. In one exemplary embodiment, for instance, the first sensor S 1 senses the white light and the second sensor S 2 senses the infrared ray. In addition, the first sensor S 1 and the second sensor S 2 are alternately arranged with each other in the second direction. That is, the first sensor S 1 is arranged in an even-numbered pixel row and the second sensor S 2 is arranged in an odd-numbered pixel row.

FIG. 3 is a plan view showing an exemplary embodiment of pixels and sensors shown in FIG. 2 , FIG. 4 is a cross-sectional view taken along line I-I′ shown in FIG. 3 , and FIG. 5 is a cross-sectional view taken along line II-II′ shown in FIG. 3 .

In detail, FIG. 3 shows the pixels PX and sensors when viewed from a rear side of the first substrate 110 . The second substrate 120 includes a second base substrate 121 , a plurality of gate lines, a plurality of data lines, a plurality of first bias lines, a plurality of second bias line, a plurality of readout lines, the pixels PX, and the sensors.

The gate lines are extended in a first direction D 1 and sequentially receive a gate signal. The data lines and the readout lines are extended in a second direction D 2 crossing the first direction D 1 and insulated from the gate lines. The data lines receive a data voltage. The pixels PX may further include storage lines SL to which a storage voltage is applied. The storage lines SL may be disposed on the same layer as the gate lines.

In the illustrated exemplary embodiment, since the pixels PX have the same structure and function, one pixel PX will be described as a representative example and details of others will be omitted.

The pixel PX includes a first transistor TR 1 , a second transistor TR 2 , and a third transistor TR 3 , a first pixel electrode PE 1 , a second pixel electrode PE 2 , a first distribution electrode DCE 1 , and a second distribution electrode DCE 2 . In the illustrated exemplary embodiment, the first and second transistors TR 1 and TR 2 are disposed adjacent to each other and on one gate electrode GE 1 ,GE 2 .

The first and second transistors TR 1 and TR 2 output the data voltage in response to the gate signal provided through an n-th gate line GLn.

The first transistor TR 1 includes a first gate electrode GE 1 , a first source electrode SE 1 , and a first drain electrode DE 1 . The first gate electrode GE 1 is branched from the n-th gate line GLn (n is a natural number equal to or larger than 1). A first insulating layer 123 is on the first gate electrode GE 1 , and a semiconductor layer ACT is on the first insulating layer 123 . The first source electrode SE 1 branched from an m-th data line DLm (m is a natural number equal to or larger than 1) and the first drain electrode DE 1 spaced apart from the first source electrode SE 1 are on the semiconductor layer ACT.

The second transistor TR 2 includes a second gate electrode GE 2 , a second source electrode SE 2 , and a second drain electrode DE 2 . Similar to the first transistor TR 1 , the second source electrode SE 2 branched from the m-th data line DLm and the second drain electrode DE 2 spaced apart from the second source electrode SE 2 are on the semiconductor layer ACT.

The third transistor TR 3 outputs the data voltage provided through the second drain electrode DE 2 in response to the gate signal provided from an (n+1)-th gate line GLn+1. The third transistor TR 3 includes a third gate electrode GE 3 branched from the (n+1)-th gate line GLn+1, a third source electrode SE 3 connected to the second drain electrode DE 2 , and a third drain electrode DE 3 spaced apart from the source electrode SE 3 in a predetermined distance. Although not shown in figures, the first insulating layer 123 is on the third gate electrode GE 3 and the semiconductor layer ACT is on the first insulating layer 123 . In addition, the third source electrode SE 3 and the third drain electrode DE 3 are on the semiconductor layer ACT.

The second distribution electrode DCE 2 is electrically connected to the third drain electrode DE 3 . The second distribution electrode DCE 2 may be disposed on the same layer as the third drain electrode DE 3 and integrally formed with the third drain electrode DE 3 , such that the second distribution electrode CDE 2 and the third drain electrode DE 3 collectively form a single, unitary, indivisible member.

The first distribution electrode DCE 1 is extended from the first storage line SL 1 to face the second distribution electrode DCE 2 . The first distribution electrode DCE 1 and the second distribution electrode DCE 2 form a distribution capacitor.

The second substrate 120 further includes a second insulating layer 126 on the second base substrate 121 to cover the first to third source electrodes SE 1 , SE 2 , and SE 3 , the first to third drain electrodes DE 1 , DE 2 , and DE 3 , and the second distribution electrode DCE 2 . The second insulating layer 126 includes silicon nitride (SiNx) or silicon oxide (SiO 2 ).

The first pixel electrode PE 1 and the second electrode PE 2 are disposed on the second insulating layer 126 and spaced apart from each other while interposing the first and second transistors TR 1 and TR 2 therebetween. Each of the first and second pixel electrodes PE 1 and PE 2 has a rectangular shape.

In detail, the first pixel electrode PE 1 includes a cross-shape trunk portion having a horizontal trunk portion and a vertical trunk portion, an outer portion disposed at ends of the first pixel electrode PE 1 , and a protrusion portion protruded from a left side lower end of the outer portion and connected to the first drain electrode DE 1 through a first contact hole H 1 which extends through a thickness of the second insulating layer 126 . The first storage line SL 1 is extended in the first and second directions D 1 and D 2 to surround the first pixel electrode PE 1 , thereby preventing a light leakage.

The second pixel electrode PE 2 includes a cross-shape trunk portion having a horizontal trunk portion and a vertical trunk portion, an upper horizontal portion, a lower horizontal portion, and a protrusion portion protruded from the vertical trunk portion and connected to the second drain electrode DE 2 through a second contact hole H 2 which extends through the thickness of the second insulating layer 126 .

Each of the first pixel electrode PE 1 and the second pixel electrode PE 2 is divided into four sub-areas by the cross-shaped trunk portion and each sub-area includes a plurality of branch portions outwardly extended from the cross-shaped trunk portion and inclined to the gate line GL. The angle between the gate line GL and the branch portions is from about 45 degrees to about 135 degrees.

Sides of the branch portions of the first and second pixel electrodes PE 1 and PE 2 distort an electric field of the liquid crystal layer to cause horizontal components of the electric field vertical to the sides of the branch portions, and an inclination direction of liquid crystal molecules in the liquid crystal layer depends on the horizontal components of the electric field. Accordingly, the liquid crystal molecules tend to be inclined toward a direction vertical to the sides of the branch portions. However, since the direction of the horizontal components of the electric field is opposite to that of the horizontal components of the electric field caused by adjacent branch portions and a width of the branch portions or a distance between the branch portions is narrower than a cell gap of the liquid crystal layer 130 , the liquid crystal molecules are inclined in a direction substantially parallel to a longitudinal direction of the branch portions.

As described above, since each of the first and second pixel electrodes PE 1 and PE 2 includes the four sub-areas in which the branch portions have different longitudinal directions from each other, the liquid crystal molecules in liquid crystal layer 130 are inclined in four directions. As a result, a viewing angle of a liquid crystal display may be improved.

The second substrate 120 further includes a plurality of sensors. Referring to FIG. 2 , for instance, the sensors of the second substrate 120 include a first sensor S 1 sensing an infrared ray and a second sensor S 2 sensing a white light. When a sensor included in one pixel unit PU of the pixel units PU is referred to as a first sensor S 1 , a sensor included in a pixel unit PU adjacent to the one pixel unit PU in a direction substantially perpendicular to the direction in which the first, second, and third sub-pixels S-PX 1 , S-PX 2 , and S-PX 3 are arranged may be referred to as a second sensor S 2 . In addition, the first sensor S 1 is arranged in an odd-numbered pixel row and the second sensor S 2 is arranged in an even-numbered pixel row.

In the illustrated exemplary embodiment, since the first sensors S 1 have the same structure and function, one first sensor S 1 will be described as a representative example and details of other first sensors will be omitted. In addition, the second sensors S 2 have the same structure and function, one second sensor S 2 will be described as a representative example and details of other second sensors will be omitted.

The first sensor S 1 includes a switching transistor SW, a first sensor transistor ST 1 , and a charging capacitor Cs. The first sensor S 1 further includes a first gate line GL 1 , a first readout lint RL, a first bias line BL 1 , and a second bias line BL 2 . The first gate line GL 1 is connected to the first and second transistors TR 1 and TR 2 .

The first bias line BL 1 transmits a first bias voltage. The first bias line BL 1 is extended in the first direction D 1 and disposed on the same layer as the first gate line GL 1 .

The second bias line BL 2 transmits a second bias voltage different the first bias voltage. A first readout line RL is connected to the switching transistor SW to receive a sensing signal output from the switching transistor SW. The first readout line RL and the second bias line BL 2 are extended in the second direction D 2 and substantially parallel to a first data line DL 1 . In addition, the first readout line RL and the second bias line BL 2 may be disposed on the same layer as the first data line DL 1 .

The first sensor transistor ST 1 senses the infrared ray and outputs the sensing signal according to the sensed light amount. The first sensor transistor ST 1 includes a first sensing electrode SSE 1 , a second sensing electrode SSE 2 , a first sensor layer SEN 1 , and a first sensor gate electrode SGE 1 .

The first sensor gate electrode SGE 1 is connected to the first bias line BL 1 . The first sensor gate electrode SGE 1 is disposed on the same layer as the first gate electrode GE 1 of the first transistor TR 1 .

A filter BPF is disposed between the first sensor gate electrode SGE 1 and the second base substrate 121 to transmit the light having the infrared ray wavelength and block the light having another wavelength. The filter BPF may include silicon germanium (SiGe). The filter BPF receives the first bias voltage from the first sensor gate electrode SGE 1 and the first bias voltage has a negative polarity.

The first sensor gate electrode SGE 1 and the filter BPF are covered by the first insulating layer 123 and the first sensor layer SEN 1 is disposed on the filter BPF. The first sensor layer SEN 1 may include silicon germanium (SiGe) as the filter BPF.

The first sensing electrode SSE 1 is disposed on the first sensor layer SEN 1 . The first sensing electrode SSE 1 is connected to the second bias line BL 2 . The second bias voltage has a level different from that of the first bias voltage. The second bias line BL 2 is disposed on the same layer as the first sensing electrode SSE 1 .

The first sensing electrode SSE 1 includes a plurality of first branch electrodes extended in the first direction D 1 , and a connection portion extended in the second direction D 2 to connect the first branch electrodes to each other. The second sensing electrode SSE 2 is disposed on the first sensor layer SEN 1 and spaced apart from the first sensing electrode SSE 1 . The second sensing electrode SSE 2 includes a plurality of second branch electrodes extended in the first direction D 1 , and a connection portion connecting the second branch electrodes to each other. The first branch electrodes are alternately arranged with the second branch electrodes.

The first sensing electrode SSE 1 and the second sensing electrode SSE 2 are disposed on the same layer as the first source electrode SE 1 of the first transistor TR 1 .

The charging capacitor Cs includes a first charging electrode SCE 1 and a second charging electrode SCE 2 . The first charging electrode SCE 1 is disposed on the same layer as the first sensor gate electrode SGE 1 . The first insulating layer 123 covers the first charging electrode SCE 1 and includes a third contact hole H 3 to expose a portion of the first charging electrode SCE 1 .

The second charging electrode SCE 2 is disposed on the first charging electrode SCE 1 . The second charging electrode SCE 2 is connected to the first drain electrode DE 1 and disposed on the same layer as the first drain electrode DE 1 . The second charging electrode SCE 2 is insulated from the first charging electrode SCE 1 by the first insulating layer 123 . The first charging electrode SCE 1 and the second charging electrode SCE 2 form the charging capacitor Cs.

The second insulating layer 126 covers the second charging electrode SCE 2 , the first source electrode SE 1 , the first drain electrode DE 1 , and the second bias line BL 2 . The second insulating layer 126 includes a fourth contact hole H 4 to expose a portion of the second bias line BL 2 , and the third contact hole H 3 corresponding to a third contact hole H 3 extending through the first insulating layer 123 to expose the portion of the first charging electrode SCE 1 . The first charging electrode SCE 1 and the second bias line BL 2 are connected to each other by a connection electrode CNE disposed on the second insulating layer 126 through the third and fourth contact holes H 3 and H 4 . The first charging electrode SCE 1 receives the second bias voltage from the second bias line BL 2 through the connection electrode CNE.

The switching transistor SW outputs the sensing signal in response to the gate signal. The switching transistor SW includes a fourth gate electrode GE 4 , a fourth source electrode SE 4 , and a fourth drain electrode DE 4 .

The fourth gate electrode GE 4 is branched from the first gate line GL 1 . The fourth gate electrode GE 4 is disposed on the same layer as the first, second, and third gate electrodes GE 1 , GE 2 , and GE 3 of the first, second, and third transistors TR 1 , TR 2 , and TR 3 . The fourth gate electrode GE 4 is covered by the first insulating layer 123 and the semiconductor layer ACT is disposed on the fourth gate electrode GE 4 .

The fourth source electrode SE 4 is disposed on the semiconductor layer ACT. The fourth source electrode SE 4 is connected to the second sensing electrode SSE 2 and the second charging electrode SCE 2 to output the sensing signal.

The fourth drain electrode DE 4 is spaced apart from the fourth source electrode SE 4 . The fourth source electrode SE 4 and the fourth drain electrode DE 4 are disposed on the same layer as the first source electrode SE 1 . In addition, the fourth drain electrode DE 4 is connected to the first readout line RL and applies the sensing signal to the first readout line RL.

The second sensor S 2 includes the switching transistor SW, a second sensor transistor ST 2 , and the charging capacitor Cs. The second sensor S 2 further includes the first gate line GL 1 , the first readout line RL, the first bias line BL 1 , and the second bias line BL 2 . In the illustrated exemplary embodiment, the switching transistor SW and the charging capacitor Cs of the second sensor S 2 have the same structure and function as those of the switching transistor SW and the charging capacitor Cs of the first sensor S 1 , and thus details thereof will be omitted and assigned the same numerals.

The second sensor transistor ST 2 senses the white light and outputs the sensing signal. The second sensor transistor ST 2 includes a first sensing electrode SSE 1 , a second sensing electrode SSE 2 , a second sensor layer SEN 2 , and a second sensor gate electrode SGE 2 .

The second sensor gate electrode SGE 2 is connected to the first bias line BL 1 . The first sensor gate electrode SGE 1 is disposed on the same layer as the first gate electrode GE 1 of the first transistor TR 1 .

The second sensor gate electrode SGE 2 is covered by the first insulating layer 123 and the second sensor layer SEN 2 is disposed on the second sensor gate electrode SGE 2 . The second sensor layer SEN 2 may include amorphous silicon a-Si. The second sensor layer SEN 2 may be activated by the white light incident thereto.

The first sensing electrode SSE 1 of the second sensor transistor ST 2 is disposed on the second sensor layer SEN 2 . The first sensing electrode SSE 1 is connected to the second bias line BL 2 . The first sensing electrode SSE 1 includes a plurality of first branch electrodes extended in the first direction D 1 and a connection portion extended in the second direction D 2 to connect the first branch electrodes. The second sensing electrode SSE 2 is spaced apart from the first sensing electrode SSE 1 and disposed on the second sensor layer SEN 2 . The second sensing electrode SSE 2 includes a plurality of second branch electrodes extended in the first direction D 1 and a connection portion connecting the second branch electrodes. The first branch electrodes are alternately arranged with the second branch electrodes in the second direction D 2 . The first sensing electrode SSE 1 and the second sensing electrode SSE 2 are disposed on the same layer as the first source electrode SE 1 of the first transistor TR 1 .

The second insulating layer 126 covers the second charging electrode SCE 2 of the charging capacitor Cs, the first source electrode SE 1 , the first drain electrode DE 1 , and the second bias line BL 2 . The second insulating layer 126 includes the fourth contact hole H 4 to expose the portion of the second bias line BL 2 , and the third contact hole H 3 corresponding to the third contact hole H 3 extended through a thickness the first insulating layer 123 to expose the portion of the first charging electrode SCE 1 . The first charging electrode SCE 1 and the second bias line BL 2 are connected to each other by the connection electrode CNE disposed on the second insulating layer 126 through the third and fourth contact holes H 3 and H 4 . The first charging electrode SCE 1 receives the second bias voltage from the second bias line BL 2 through the connection electrode CNE.

In the illustrated exemplary embodiment, the display panel includes the first sensors S 1 alternately arranged with the second sensors S 2 , but they should not be limited thereto or thereby. That is, the display panel may include only the first sensors S 1 or only the second sensors S 2 .

The first substrate 110 includes a first base substrate 111 facing the second base substrate 121 , and a color filter (not shown), a light blocking member BM, and a common electrode CE disposed on the first base substrate 111 .

The color filter is disposed on the first base substrate 111 to correspond to (e.g., overlap) the first pixel electrode PE 1 and the second pixel electrode PE 2 . The color filter has one of red, green and blue colors.

The light blocking matrix BM is disposed in areas in which the first and second sensors S 1 and S 2 are disposed. The light blocking member BM prevents the light from the backlight unit 200 from being incident to the first and second sensors S 1 and S 2 . In the illustrated exemplary embodiment, the light blocking member BM includes a material having a light transmittance of about 5%. This is to prevent the first and second sensors S 1 and S 2 from being malfunctioned by an external light transmitting through the light blocking member BM.

The common electrode CE includes a transparent material, such as indium tin oxide (“ITO”), indium zinc oxide (“IZO”), etc., and is disposed over the first base substrate 111 . The common electrode CE faces the first pixel electrode PE 1 and a second pixel electrode PE 2 while interposing the liquid crystal layer 130 therebetween. Thus, the common electrode CE and the first pixel electrode PE 1 form a first liquid crystal capacitor, and the common electrode CE and the second pixel electrode PE 2 form a second liquid crystal capacitor.

In the illustrated exemplary embodiment, the color filter and the light blocking member BM are disposed on the first substrate 110 , but the color filter and the light blocking member BM may be disposed on the second substrate 120 according to alternative embodiments.

FIGS. 6A to 6G are plan views showing an exemplary embodiment of a method of manufacturing a display apparatus according to the invention.

Referring to FIG. 6A , a silicon germanium layer is formed on the second base substrate 121 . The silicon germanium layer may be formed by a chemical vapor deposition process. The silicon germanium layer is patterned by an etch process to form the filter BPF. The silicon germanium layer reacts with the light to have conductivity.

Referring to FIG. 6B , a gate metal is formed on the second base substrate 121 by a sputtering process. The gate metal has a single-layer structure of chromium, aluminum, molybdenum, or copper, or a multi-layer structure of metals.

Then, the gate metal is patterned to form the first, third, and fourth gate electrodes GE 1 , GE 3 , and GE 4 , the first and second sensor gate electrodes SGE 1 and SGE 2 , the storage line SL, the gate lines GL, the first bias line BL 1 , the first distribution electrode DCE 1 , and the first charging electrode SCE 1 . The first sensor gate electrode SGE 1 is formed on (e.g., overlapping) the filter BPF.

The first insulating layer 123 is formed on the second base substrate 121 to cover the first, third, and fourth gate electrodes GE 1 , GE 3 , and GE 4 , the first and second sensor gate electrodes SGE 1 and SGE 2 , the storage line SL, the gate lines GL, the first bias line BL 1 , the first distribution electrode DCE 1 , the first charging electrode SCE 1 , and the filter BPF.

As shown in FIG. 6C , the semiconductor layer ACT is formed on the first insulating layer 123 to correspond to (e.g., overlap) the first, third, and fourth gate electrodes GE 1 , GE 3 , and GE 4 , and the second sensor layer SEN 2 is formed on the second sensor gate electrode SGE 2 . The second sensor layer SEN 2 and the semiconductor layer ACT may be formed of the amorphous silicon.

Referring to FIG. 6D , the first sensor layer SEN 1 is formed on the first insulating layer 123 to correspond to the filter BPF. The first sensor layer SEN 1 may be formed of a silicon germanium.

Referring to FIG. 6E , a data metal is formed on the second base substrate 121 and then patterned to form the data lines DL, the second bias line BL 2 , the second distribution electrode DCE 2 , the second charging electrode SCE 2 , the first sensing electrode SSE 1 , the second sensing electrode SSE 2 , the readout lines RL, the first, second, third, and fourth source electrodes SE 1 , SE 2 , SE 3 , and SE 4 , and the first, second, third, and fourth drain electrodes DE 1 , DE 2 , DE 3 , and DE 4 .

As shown in FIG. 6F , the second insulating layer 126 is formed on the second base substrate 121 to cover the first, second, and third transistors TR 1 , TR 2 , and TR 3 and the second charging electrode SCE 2 . The second insulating layer 126 is formed of an inorganic material, such as silicon nitride (SiNx).

The second insulating layer 126 is provided with the first and second contact holes H 1 and H 2 formed therethrough to respectively connect the first and second pixel electrodes PE 1 and PE 2 to the first and second drain electrodes DE 1 and DE 2 . The first contact hole H 1 is disposed on the first drain electrode DE 1 and the second contact hole H 2 is disposed on the second drain electrode DE 2 .

In addition, the second insulating layer 126 is provided with the third contact hole H 3 to expose the portion of the first charging electrode SCE 1 and the fourth contact hole H 4 to expose the portion of the second bias line BL 2 . The third contact hole H 3 is formed through not only the second insulating layer 126 but also the first insulating layer 123 to expose the portion of the first charging electrode SCE 1 .

Referring to FIG. 6G , the transparent conductive layer is formed on the second insulating layer 126 using indium tin oxide or indium zinc oxide. Then, the transparent conductive layer is patterned to form the first pixel electrode PE 1 , the second pixel electrode PE 2 , and the connection electrode CNE.

The first pixel electrode PE 1 is electrically connected to the first drain electrode DE 1 through the first contact hole H 1 and the second pixel electrode PE 2 is electrically connected to the second drain electrode DE 2 through the second contact hole H 2 . In addition, the connection electrode CNE connects the first charging electrode SCE 1 and the second bias line BL 2 through the third and fourth contact holes H 3 and H 4 .

Although not shown in figures, the color filter is formed on the first base substrate 111 to correspond to the first and second pixel electrodes PE 1 and PE 2 , and a light blocking member BM is formed on the first base substrate 111 to correspond to the first and second sensors. In addition, the common electrode CE is formed on the color filter and the light blocking member. The liquid crystal layer 130 is disposed between the first substrate 110 and the second substrate 120 . The liquid crystal layer 130 may include vertically aligned liquid crystals.

According to the above, the pixel and the sensor may be formed by one single process. Thus, a manufacturing process time for the display apparatus may be reduced, thereby improving the productivity.

Although the exemplary embodiments of the invention have been described, it is understood that the invention should not be limited to these exemplary embodiments but various changes and modifications can be made by one ordinary skilled in the art within the spirit and scope of the invention as hereinafter claimed.