Semiconductor device and manufacturing method thereof

This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2010-202108, filed on Sep. 9, 2010, the entire contents of which are incorporated herein by reference.

The embodiments of the present invention relate to a semiconductor device and manufacturing method thereof.

There has been known a technique of additionally implanting an impurity in a part of a source/drain region of a MOS transistor to which a contact plug is connected to reduce an electric resistance of a connected part of the source/drain region and the contact plug. This additional implantation of an impurity is performed through a contact hole formed in an insulating film on a source/drain region.

When this technique is applied to a case of manufacturing an n-type transistor and a p-type transistor on a same substrate, a mask for closing a contact hole on a source/drain region of a different conductive type from that of the impurity is used to selectively implant a conductive impurity in a source/drain region of a same conductive type as that of the impurity. However, because a photolithography process for forming the mask is required, the number of manufacturing processes is increased.

Further, there has been known a technique of implanting an impurity in a direction tilted from a direction vertical to a region in a substrate between transistors as an implant direction where an impurity enters. When an impurity enters in the direction tilted from the vertical direction, an impurity diffusion region extends largely toward the direction where an impurity enters. Accordingly, when a region that becomes a current path such as a source/drain region is formed, there is a possibility of occurrence of a short channel effect.

FIG. 1 is a top view of a semiconductor device 1 according to the first embodiment;

FIGS. 2A , 2 B, and 2 C are cross-sectional views of the semiconductor device 1 along lines AA, BB, and CC shown in FIG. 1 , respectively;

FIG. 3 is a cross-sectional view of the semiconductor device 1 along a line DD shown in FIG. 1 ;

FIG. 4 is an enlarged top view showing the positional relationship between a bottom surface of the contact plug 11 b and the high-concentration impurity region 16 ;

FIGS. 5 A(a), 5 A(b), 5 B(c), and 5 B(d) are top views showing modifications of the transistor 10 b according to the first embodiment;

FIGS. 6 to 11 are cross-sectional views showing a manufacturing process of the semiconductor device 1 according to the first embodiment;

FIGS. 12A and 12B are top views showing the relationship between the arrangement of the bottom surface of the contact hole 19 b and a horizontal component of the implant direction where an impurity enters;

FIG. 13 is a top view of a semiconductor device 1 - 1 of a second embodiment of the present invention; and

FIGS. 14 and 15 are cross-sectional views showing a manufacturing process of the semiconductor device 1 - 1 according to the second embodiment.

Embodiments of the present invention disclose a semiconductor device. The semiconductor device comprises first and second transistors, first and second contact plugs, and a high-concentration impurity region. The first transistor is formed on a substrate and comprises a first gate electrode and first source and drain regions. The second transistor is formed on the substrate and comprises a second gate electrode and second source and drain regions of a conductive type different from that of the first source and drain regions. The first contact plug is electrically connected to the first source and drain regions and comprises a first bottom surface which has a longitudinal direction and a short direction. A width of the first bottom surface in a direction parallel to a gate width direction of the first gate electrode is wider than a width of the first bottom surface in a direction parallel to a gate length direction of the first gate electrode. The second contact plug is electrically connected to the second source and drain regions and comprises a second bottom surface. Widths in all directions of the second bottom surface are narrower than the longitudinal direction width of the first bottom surface. High-concentration impurity regions are formed between the first source and drain regions and the first contact plugs. The high-concentration impurity regions are a same conductive type as that of the first source and drain regions. The first contact plug is electrically connected to the first source and drain regions through the high-concentration impurity regions. At least one of extending widths of an outline of the high-concentration impurity region extending from an outline of the first bottom surface in a longitudinal direction is larger than extending widths of an outline of the high-concentration impurity region extending from an outline of the first bottom surface in a short direction.

Embodiments will now be explained with reference to the accompanying drawings.

First Embodiment

A first embodiment of the present invention is an exemplary embodiment for explaining a case where the present invention is applied to a NAND flash memory device.

(Configuration of Semiconductor Device)

FIG. 1 is a top view of a semiconductor device 1 according to the first embodiment. FIGS. 2A , 2 B, and 2 C are cross-sectional views of the semiconductor device 1 along lines AA, BB, and CC shown in FIG. 1 , respectively. FIG. 3 is a cross-sectional view of the semiconductor device 1 along a line DD shown in FIG. 1 .

The semiconductor device 1 has transistors 10 a and 10 b formed in a peripheral circuit region 100 on a semiconductor substrate 2 , and a memory cell 20 formed in a memory cell region 200 . An insulating layer 4 is formed on the transistors 10 a and 10 b and the memory cell 20 . The insulating layer 4 is omitted from FIG. 1 .

An active area on the semiconductor substrate 2 where the transistors 10 a and 10 b and the memory cell 20 are formed is isolated by an isolation insulating film 3 . The transistor 10 a and the transistor 10 b are of different conductive types. The memory cell 20 is of a same conductive type as that of the transistor 10 a.

For example, the transistor 10 a and the memory cell 20 are of n-type and the transistor 10 b is of p-type.

The transistor 10 a includes a gate dielectric film 17 a on the semiconductor substrate 2 , a gate electrode 13 a on the gate dielectric film 17 a , and a source/drain region 12 a in an active area on both sides of the gate electrode 13 a.

A contact plug 11 a is connected to the source/drain region 12 a . A high-concentration impurity region 15 a is formed near an interface between the source/drain region 12 a and the contact plug 11 a in the source/drain region 12 a . The high-concentration impurity region 15 a reduces an electric resistance of a connected part of the contact plug 11 a and the source/drain region 12 a . The high-concentration impurity region 15 a cannot be formed.

The high-concentration impurity region 15 a is formed by additionally implanting an impurity in the source/drain region 12 a , and has the same conductive type as that of the source/drain region 12 a . Its impurity concentration is higher than that of the source/drain region 12 a.

The transistor 10 b includes a gate dielectric film 17 b on the semiconductor substrate 2 , a gate electrode 13 b on the gate dielectric film 17 b , and a source/drain region 12 b on both sides of the gate electrode 13 b . A contact plug 11 b is connected to the source/drain region 12 b.

The contact plug 11 b is connected to the source/drain region 12 b and a high-concentration impurity region 16 is formed near an interface between the source/drain region 12 b and the contact plug 11 b in the source/drain region 12 b . The high-concentration impurity region 16 reduces an electric resistance of a connected part of the contact plug 11 b and the source/drain region 12 b.

The high-concentration impurity region 16 is formed by additionally implanting an impurity in the source/drain region 12 b and has the same conductive type as that of the source/drain region 12 b . Its impurity concentration is higher than that of the source/drain region 12 b.

A high-concentration impurity region 15 b that is of a different conductive type from that of the high-concentration impurity region 16 is also formed near the interface between the source/drain region 12 b and the contact plug 11 b in the source/drain region 12 b . However, because the impurity concentration of the high-concentration impurity region 15 b is lower than that of the high-concentration impurity region 16 , the conductive type of the high-concentration impurity region 16 is dominant near the interface between the source/drain region 12 b and the contact plug 11 b in the source/drain region 12 b.

A region 5 in the insulating layer 4 indicated by a dotted line in FIGS. 2 and 3 is a region where an impurity is implanted at the time of forming high-concentration impurity region 16 . The region 5 thus contains the same impurity as that of the high-concentration impurity region 16 . The region 5 is formed on the entire top surface of the insulating layer 4 , on the entire side surface that contacts a side surface of the contact plug 11 b parallel to its short direction X 2 to be described later, on all side surfaces of the contact plugs 11 a and 21 , and on an upper part of the side surface that contacts a side surface of the contact plug 11 b parallel to its longitudinal direction Y 2 to be described later. A region on the insulating layer 4 in which an impurity is implanted at the time of forming the high-concentration impurity regions 15 a , 15 b , and 25 is omitted from the drawings.

The memory cell 20 includes a plurality of serially-connected stacked-gate-type memory cell transistors 23 and a selective transistor 24 connected to ends of each memory cell transistor 23 . By arranging the memory cell transistors 23 and the selective transistors 24 in this manner, a NAND memory cell string is constituted. The memory cell transistor 23 is connected via a source/drain region 22 to the selective transistor 24 .

The contact plug 21 is connected to the source/drain region 22 that connects two adjacent selective transistors 24 . The high-concentration impurity region 25 is formed near an interface between the source/drain region 22 and the contact plug 21 in the source/drain region 22 . The high-concentration impurity region 25 is formed by additionally implanting an impurity in the source/drain region 22 and has the same conductive type as that of the source/drain region 22 . Its impurity concentration is higher than that of the source/drain region 22 .

The memory cell transistor 23 includes a gate dielectric film 23 a on the semiconductor substrate 2 , a floating gate 23 b on the gate dielectric film 23 a , an inter-gate dielectric film 23 c on the floating gate 23 b , and a control gate 23 d on the inter-gate dielectric film 23 c . The control gate 23 d is shared with an adjacent memory cell 23 in a lateral direction in FIG. 1 . Thicknesses of the gate dielectric films 17 a , 17 b , and 23 a are substantially equal to each other. That is, the transistors 10 a and 10 b are operated at high speed with an operating voltage of 1 V to 5 V. The transistors 10 a and 10 b are also called “high speed transistors”.

The selective transistor 24 includes a gate dielectric film 24 a on the semiconductor substrate 2 and a selective gate 24 b on the gate dielectric film 24 a . The selective gate 24 b is shared with an adjacent selective transistor 24 in the lateral direction in FIG. 1 .

FIG. 4 is an enlarged top view showing the positional relationship between a bottom surface of the contact plug 11 b and the high-concentration impurity region 16 . Arrows X 1 and Y 1 in FIG. 4 denote a gate length direction and a gate width direction of the gate electrode 13 b , respectively. Arrows X 2 and Y 2 denote a short direction and a longitudinal direction of the contact plug 11 b , respectively.

The bottom surface of the contact plug 11 b is formed in a shape that the longitudinal direction and the short direction are provided, such as a rectangle or an ellipse. In the bottom surface of the contact plug 11 b , a width W 2 in a direction parallel to the gate width direction Y 1 of the gate electrode 13 b is wider than a width W 1 in a direction parallel to the gate length direction X 1 of the gate electrode 13 b . The longitudinal direction Y 2 matches or is similar to the gate width direction Y 1 of the gate electrode 13 b.

Meanwhile, bottom surfaces of the contact plugs 11 a and 21 are formed in a shape that their widths in all directions are narrower than the width of the bottom surface of the contact plug 11 b in the longitudinal direction Y 2 . The shape is a square or a circular shape, for example. Particularly in the contact plug 21 , an elliptical contact which is long toward the selective transistor 24 side is used to reduce the electric resistance of the connected part of the source/drain region 22 and the contact plug 21 . Even in this case, the bottom surface of the contact plug 21 in a long diameter direction is narrower than the width of the bottom surface of the contact plug 11 b in the longitudinal direction Y 2 .

A width D 1 in FIG. 4 denotes an extending width of an outline of the high-concentration impurity region 16 extending from an outline of the bottom surface of the contact plug 11 b in the short direction X 2 . A width D 2 denotes an extending width of the outline of the high-concentration impurity region 16 extending from the outline of the bottom surface of the contact plug 11 b in the longitudinal direction Y 2 . The width D 2 is larger than the width D 1 .

The outline of the high-concentration impurity region 16 is a concentration contour line of an impurity that constitutes the high-concentration impurity region 16 at a predetermined concentration. This predetermined concentration is smaller than the maximum impurity concentration of the high-concentration impurity region 16 and larger than the impurity concentration of the source/drain region 12 b . And the predetermined concentration is, for example, an intermediate concentration between the maximum impurity concentration of the high-concentration impurity region 16 and the impurity concentration of the source/drain region 12 b.

Examples of impurity concentrations of the respective regions are indicated below in a case that the transistor 10 a and the memory cell 20 are of n-type and the transistor 10 b is of p-type. As or P is used for the n-type impurity and B is used for the p-type impurity.

The impurity concentration of the source/drain regions 12 a , 12 b , and 22 is 1×10 19 cm −3 . The maximum impurity concentration (concentration around the center) of the high-concentration impurity regions 15 a , 15 b , and 25 is 3×10 20 cm −3 . The maximum impurity concentration (concentration around the center) of the high-concentration impurity region 16 is 6×10 20 cm −3 .

In this case, the concentration of the outline of the high-concentration impurity region 16 is larger than 1×10 19 cm −3 and smaller than 6×10 20 cm −3 , such as 3.05×10 19 cm −3 , for example.

FIGS. 5 A(a), 5 A(b), 5 B(c), and 5 B(d) are top views showing modifications of the transistor 10 b according to the first embodiment.

FIG. 5 A(a) shows the configuration of the transistor 10 b when the longitudinal direction Y 2 of the contact plug 11 b does not match the gate width direction Y 1 of the gate electrode 13 b . When the longitudinal direction Y 2 is shifted greatly from the gate width direction Y 1 , that is, when the width W 1 approximates the width W 2 , a distance between the high-concentration impurity region 16 and the gate electrode 13 b is reduced and thus a short channel effect may occur. Accordingly, a shift of the longitudinal direction Y 2 from the gate width direction Y 1 is preferably as small as possible. As in the configuration shown in FIG. 4 , it is preferable to configure such that the longitudinal direction Y 2 matches the gate width direction Y 1 .

FIG. 5 A(b) shows the configuration of the transistor 10 b when the bottom surface of the contact plug 11 b is formed in an elliptical shape. In this case, the high-concentration impurity region 16 is also formed in a substantially elliptical shape. The width D 2 is a distance from a long-diameter direction top of the ellipse of the contact plug 11 b to a long-diameter direction top of the ellipse of the high-concentration impurity region 16 . The width D 1 is a distance from a short-diameter direction top of the eclipse of the contact plug 11 b to a short-diameter direction top of the eclipse of the high-concentration impurity region 16 . Also in this configuration, the width D 2 is larger than the width D 1 .

FIG. 5 B(c) shows the configuration of the transistor 10 b when an end of the bottom surface of the contact plug 11 b in the longitudinal direction Y 2 (lower end in FIG. 5 B(c)) is outside the outline of the high-concentration impurity region 16 .

In the configuration shown in FIG. 5 B(c), the outline of the high-concentration impurity region 16 extends from the outline of the bottom surface of the contact plug 11 b in the longitudinal direction Y 2 only in one side (upper side in FIG. 5 B(c)). Alternatively, while the outline of the high-concentration impurity region 16 extends in both directions in the longitudinal direction Y 2 , one extending width can be smaller than the width D 1 .

That is, at least one of the widths D 2 that the outline of the high-concentration impurity region 16 extends from the outline of the bottom surface of the contact plug 11 b in the longitudinal direction Y 2 is larger than the width D 1 that the outline of the high-concentration impurity region 16 extends from the outline of the bottom surface of the contact plug 11 b in the short direction X 2 .

FIG. 5 B(d) shows the configuration of the transistor 10 b when one end of the bottom surface of the contact plug 11 b in the short direction X 2 (right end in FIG. 5 B(d)) is outside the outline of the high-concentration impurity region 16 .

According to the configuration shown in FIG. 5 B(d), the outline of the high-concentration impurity region 16 extends from the outline of the bottom surface of the contact plug 11 b in the short direction X 2 only in one side (left side in FIG. 5 B(d)). Also in this configuration, the width D 2 is larger than the width D 1 .

The semiconductor substrate 2 is made of a Si based crystal including a Si crystal.

The isolation region 3 is made of an insulating material such as SiO 2 and has an STI (Shallow Trench Isolation) structure.

The gate electrodes 13 a and 13 b , the control gate 23 b , and the floating gate 23 d are made of a conductive material such as polycrystalline Si containing a conductive impurity.

The gate dielectric films 17 a , 17 b , 23 a , and 24 a and the inter-gate dielectric film 23 c are made of an insulating material such as SiO 2 .

The contact plugs 11 a , 11 b , and 21 are made of a conductive material such as W. Surfaces of the contact plugs 11 a , 11 b , and 21 can be covered by a barrier metal.

The insulating layer 4 is made of an insulating material such as SiO 2 .

An example of a manufacturing method of the semiconductor device 1 according to the first embodiment is explained next.

(Manufacturing of Semiconductor Device)

FIGS. 6 to 11 are cross-sectional views showing a manufacturing process of the semiconductor device 1 according to the first embodiment. FIGS. 6A , 7 A, 8 A, 9 A, 10 A, and 11 A represent cross sections corresponding to that of FIG. 2A , FIGS. 6B , 7 B, 8 B, 9 B, 10 B, and 11 B represent cross sections corresponding to that of FIG. 2B , and FIGS. 6C , 7 C, 8 C, 9 C, 10 C, and 11 C represent cross sections corresponding to that of FIG. 2C .

As shown in FIGS. 6A to 6C , the isolation region 3 , the source/drain regions 12 a , 12 b , and 22 , the memory cell transistor 23 , and the selective transistor 24 are formed on the semiconductor substrate 2 . Although not shown in the cross-sections of FIGS. 6A to 6C , the gate dielectric films 17 a and 17 b and the gate electrodes 13 a and 13 b are also formed.

As shown in FIGS. 7A to 7C , an insulating material is deposited on the entire semiconductor substrate 2 , so that the insulating layer 4 is formed.

Next, as shown in FIGS. 8A to 8C , contact holes 19 a , 19 b , and 29 are formed in the insulating layer 4 . A bottom surface of the contact hole 19 b is formed so that its width in the direction parallel to the gate width direction Y 1 of the gate electrode 13 b (that is substantially equal to the width W 2 in the direction parallel to the gate width direction Y 1 of the gate electrode 13 b ) is wider than its width in the direction parallel to the gate length direction X 1 of the gate electrode 13 b (that is substantially equal to the width W 1 in the direction parallel to the gate length direction X 1 of the gate electrode 13 b ). Bottom surfaces of the contact holes 19 a and 29 are formed so that their widths in all directions are narrower than the width of the bottom surface of the contact hole 19 b in the direction parallel to the gate width direction Y 1 of the gate electrode 13 b.

Next, as shown in FIGS. 9A to 9C , an impurity which has the same conductive type as that of the source/drain regions 12 a and 22 (such as n-type) is implanted in the entire semiconductor substrate 2 with its entering direction being substantially vertical to the surface of the direction semiconductor substrate 2 . An impurity is thus implanted in the source/drain regions 12 a , 12 b , and 22 exposed at the bottoms of the contact holes 19 a , 19 b , and 29 , so that the high-concentration impurity regions 15 a , 15 b , and 25 are formed. When these high-concentration impurity regions 15 a , 15 b , and 25 are not formed, this process is omitted.

When an n-type impurity is implanted in this process, the concentration of the implantation is 1×10 15 cm −2 , for example.

Alternatively, an impurity can be implanted after forming a mask so as to selectively close an open part of the contact hole 19 b by lithography. In this case, the high-concentration impurity region 15 b is not formed and only the high-concentration impurity regions 15 a and 25 are formed.

Next, as shown in FIGS. 10A to 10C , an impurity that is of the same conductive type as that of the source/drain region 12 b (such as p-type) is implanted in the entire semiconductor substrate 2 with its entering direction being tilted from the direction vertical to the surface of the semiconductor substrate 2 . An impurity is thus selectively implanted in the source/drain region 12 b exposed at the bottom of the contact hole 19 b , so that the high-concentration impurity region 16 is formed.

When a p-type impurity is implanted in this process, the concentration of the implantation is 1×10 15 cm −2 to 3×10 15 cm −2 , for example.

The implant direction where an impurity enters is specifically indicated with reference to FIGS. 12A and 12B .

FIGS. 12A and 12B are top views showing the relationship between the arrangement of the bottom surface of the contact hole 19 b and a horizontal component of the implant direction where an impurity enters (component in a direction horizontal with respect to the surface of the semiconductor substrate 2 ).

As shown in FIG. 12A , the implant direction where an impurity enters is a direction where a twist angle θ based on the longitudinal direction Y 3 of the bottom surface of the contact hole 19 b (that is substantially equal to the longitudinal direction Y 2 of the bottom surface of the contact plug 11 b ) is equal to or larger 0° and less than 45°.

The twist angle θ based on the longitudinal direction Y 3 represents an amount of twist of the horizontal component of the implant direction where an impurity enters from the longitudinal direction Y 3 , and corresponds to an angle formed by the horizontal component of the implant direction where an impurity enters and the longitudinal direction Y 3 .

When the twist angle is increased, the width of the high-concentration impurity region 16 in the longitudinal direction Y 2 is reduced and the electric resistance of the connected part of the contact plug 11 b and the source/drain region 12 b may not be reduced sufficiently. Particularly when the twist angle is larger than 45°, the horizontal component of the implant direction where an impurity enters is not toward the longitudinal direction Y 3 but toward the short direction X 3 (that is substantially equal to the short direction X 2 of the bottom surface of the contact plug 11 b ). The twist angle is thus required to be less than 45°.

Because of such reasons, it is particularly preferable that the twist angle is 0° as shown in FIG. 12B .

As shown in FIG. 4 , because the horizontal component of the implant direction where an impurity enters matches or is similar to that of the longitudinal direction Y 3 , the width D 2 is larger than width D 1 .

Meanwhile, because the implant direction where an impurity enters is tilted from the direction vertical to the surface of the semiconductor substrate 2 , the impurity does not reach the bottoms of the contact holes 19 a and 29 having reduced widths in all directions (all impurities that enter the contact holes 19 a and 29 are implanted in the upper part of the insulating layer 4 exposed at the side surfaces of the contact holes 19 a and 29 ). Even when an impurity reaches the bottoms of the contact holes 19 a and 29 , the concentration of the impurity implanted in the source/drain regions 12 a and 22 exposed at the bottoms of the contact holes 19 a and 29 is lower than that of the impurity implanted in the source/drain region 12 b exposed at the bottom of the contact hole 19 b.

Next, as shown in FIGS. 11A to 11C , an impurity is implanted in the entire semiconductor substrate 2 in a direction having the horizontal component opposite to a horizontal component of the implant direction where an impurity enters shown in FIGS. 10A to 10C . Conditions satisfied by the implant direction where an impurity enters in this process are the same as those of the process shown in FIGS. 10A to 10C . The high-concentration impurity region 16 is thus formed in the entire source/drain region 12 b exposed at the bottom of the contact hole 19 b.

Because an impurity is implanted around the center of the high-concentration impurity region 16 in the processes shown in FIGS. 10 and 11 , this part probably has higher impurity concentration and is deeper than other parts.

When the process shown in FIGS. 11A to 11C is omitted, the configuration of the transistor 10 b becomes that shown in FIG. 5 B(c). In order to further reduce the electric resistance of the connected part of the contact plug 11 b and the source/drain region 12 b , this process is preferably performed to form the configuration shown in FIG. 4 .

Because the widths of the bottom surfaces of the contact holes 19 a and 29 in all directions are narrower than the width of the bottom surface of the contact hole 19 b in the longitudinal direction Y 3 , any impurity implanted to form the high-concentration impurity region 16 hardly reaches the bottoms of the contact holes 19 a and 29 or does not reach at all regardless of the angle at which the transistors 10 a and 10 b and the memory cell 20 are arranged.

Accordingly, even when a plurality of the transistors 10 a and 10 b and the memory cells 20 having different arrangement angles are formed, the high-concentration impurity region 16 can be formed in each transistor 10 b without any impurity hardly reaching the bottoms of the contact holes 19 a and 29 or not reaching there at all.

After the high-concentration impurity region 16 is formed, the high-concentration impurity regions 15 a , 15 b , and 25 can be formed. When the high-concentration impurity regions 15 a , 15 b , and 25 are of n-type and the high-concentration impurity region 16 is of p-type, the high-concentration impurity region 16 is preferably formed after the high-concentration impurity regions 15 a , 15 b , and 25 are formed. When the high-concentration impurity regions 15 a , 15 b , and 25 are of p-type and the high-concentration impurity region 16 is of n-type, the high-concentration impurity regions 15 a , 15 b , and 25 are preferably formed after the high-concentration impurity region 16 is formed. This is because, when a heavy p-type impurity such as As or P is implanted subsequent to a light n-type impurity such as B, the n-type impurity is pushed to diffuse into an undesirable region, since the high-concentration impurity region 15 b and the high-concentration impurity region 16 are formed so that parts of them overlap with each other.

Thereafter, activation annealing is performed to activate the implanted impurity. At this time, the width of the high-concentration impurity region 15 a , the width of the high-concentration impurity region 15 b in the short direction X 2 , and the width of the high-concentration impurity region 25 in a direction where the selective transistor 24 is adjacent thereto may be larger than those of the bottoms of the contact holes 19 a , 19 b , and 29 because of thermal diffusion. A conductive material is then embedded in the contact holes 19 a , 19 b , and 29 , so that the contact plugs 11 a , 11 b , and 21 are formed.

Effects of First Embodiment

According to the first embodiment, the high-concentration impurity region 16 can be selectively formed in the transistor 10 b without a lithography process. Accordingly, the number of processes of manufacturing the semiconductor device 1 can be reduced and manufacturing costs can be reduced.

Further, because the longitudinal direction Y 2 of the bottom surface of the contact plug 11 b in which the high-concentration impurity region 16 extends largely matches or is similar to the gate width direction Y 1 of the gate electrode 13 b , the high-concentration impurity region 16 extends a little toward the gate electrode 13 b side and thus occurrence of a short channel effect caused by the high-concentration impurity region 16 approaching excessively to the gate electrode 13 b can be suppressed.

Particularly when the transistor 10 b is a high speed transistor, the gate electrode 13 b is arranged near the contact plug 11 b . The high-concentration impurity region 16 thus tends to approach to the gate electrode 13 b . When the transistor 10 b is a high speed transistor, the first embodiment becomes particularly effective.

Because the semiconductor device 1 according to the first embodiment is a NAND flash memory device having a NAND memory cell string and the distance between the contact plug 11 b and the gate electrode 13 b for the transistor 10 b in the peripheral circuit region 100 is relatively short, it is very important to suppress occurrence of a short channel effect.

Second Embodiment

FIG. 13 is a top view of a semiconductor device 1 - 1 of a second embodiment of the present invention. The second embodiment is different from the first embodiment in that a transistor 10 b - 2 is provided in addition to the transistor 10 b (referred to as “transistor 10 b - 1 ” in the second embodiment).

The transistor 10 b - 2 is obtained by rotating the transistor 10 b - 1 by 90 degrees. That is, an extending direction where a gate electrode of the transistor 10 b - 2 extends is an X direction. A longitudinal direction of a contact plug 11 b - 2 of the transistor 10 b - 2 is the X direction and its short direction is a Y direction.

In other words, the semiconductor device 1 - 1 is an embodiment in which p-type transistors 10 b has different longitudinal directions of the contact 11 b.

(Manufacturing of Semiconductor Device)

FIGS. 14 and 15 are cross-sectional views showing a manufacturing process of the semiconductor device 1 - 1 according to the second embodiment. FIG. 14A shows a cross-section corresponding to a cross-section along a line EE shown in FIG. 13 . FIG. 14B shows a cross-section corresponding to a cross-section along a line FF shown in FIG. 13 . FIG. 15A shows a cross-section corresponding to a cross-section along a line GG shown in FIG. 13 . FIG. 15B shows a cross-section corresponding to a cross-section along a line HH shown in FIG. 13 . Because processes up to FIGS. 6 to 11 are identical to those of the first embodiment, explanations thereof are omitted.

FIGS. 14A and 14B show a case of applying a part of the manufacturing process of the semiconductor device 1 corresponding to FIGS. 11A to 11C to the semiconductor device 1 - 1 . As shown in FIG. 14A , a high-concentration impurity region 16 - 1 is formed by the processes of FIGS. 10 and 11 . The twist angle of impurity implantation in this process is 0°. The twist angle is defined by the same manner as that of FIGS. 12A and 12B .

However, as shown in FIG. 14B , in the transistor 10 b - 2 , the implant direction where an impurity enters is tilted toward a short direction having a reduced width as compared to that of a longitudinal direction. Accordingly, any impurity does not reach the bottom of a contact hole 19 b - 2 (all impurities entering the contact hole 19 b - 2 are implanted in the upper part of the insulating layer 4 exposed at the side surface of the contact hole 19 b - 2 ).

Therefore, as shown in FIGS. 15A and 15B , an impurity is implanted at a twist angle θ of 90°. As shown in FIG. 15B , the direction where an impurity enters is tilted toward the longitudinal direction of the contact hole 19 b - 2 . An impurity is thus selectively implanted in a source/drain region 12 b - 2 exposed at the bottom of the contact hole 19 b - 2 , so that a high-concentration impurity region 16 - 2 is formed.

Meanwhile, as shown in FIG. 15A , in the transistor 10 b - 1 , the implant direction where an impurity enters is tilted toward the short direction having a reduced width as compared to that of the longitudinal direction. Accordingly, any impurity does not reach the bottom of the contact hole 19 b - 1 (all impurities entering the contact hole 19 b - 1 are implanted in the upper part of the insulating layer 4 exposed at the side surface of the contact hole 19 b - 1 ). However, the high-concentration impurity region 16 - 1 has been already formed by the processes of FIGS. 10 and 11 .

Even in this case, because the widths of the bottom surfaces of the contact holes 19 a and 29 in all directions are narrower than the longitudinal direction widths of the bottom surfaces of the contact holes 19 b - 1 and 19 b - 2 , any impurity implanted to form the high-concentration impurity regions 16 - 1 and 16 - 2 hardly reaches the bottoms of the contact holes 19 a and 29 or does not reach there at all regardless of the angle at which the transistors 10 a and 10 b and the memory cell 20 are arranged.

Thereafter, an impurity is implanted at a twist angle θ of 270° as in the process of FIGS. 15A and 15B . The high-concentration impurity region 16 - 2 is thus formed in the entire source/drain region 12 b - 2 exposed at the bottom of the contact hole 19 b - 2 .

That is, according to the second embodiment, the high-concentration impurity region 16 - 1 of the p-type transistor 10 b - 1 and the high-concentration impurity region 16 - 2 of the p-type transistor 10 b - 2 are formed by implanting an impurity for four times. Twist angles θ of the impurity implantation are 0°, 90°, 180°, and 270°, respectively.

In order to reduce the number of implantation, the impurity implantation can be performed twice at twist angles of 45° and 225° or 135° and 315°.

The semiconductor device 1 - 1 can also achieve effects identical to those of the semiconductor device 1 according to the first embodiment. Further, by the semiconductor device 1 - 1 , flexibility of the arrangement direction of the p-type transistor 10 b is improved.

Other Embodiments

The present invention is not limited to the above embodiments and various modifications can be made without departing from the scope of the invention. For example, the semiconductor device according to the present invention is not limited to a NAND flash memory device including NAND flash memories.

Further, it suffices that the transistor 10 a and the memory cell 20 are of a conductive type different from that of the transistor 10 b ( 10 b - 1 , 10 b - 2 ). For example, it is also applicable that the transistor 10 a and the memory cell 20 are of p-type and the transistor 10 b is of n-type. In this case, it suffices that the type of the impurity concentration explained in the above embodiments is inverted.

While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the inventions. Indeed, the novel methods and systems described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the methods and systems described herein may be made without departing from the spirit of the inventions. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the inventions.