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Inventor

Hiroyuki Kutsukake

Inventor
Yokohama, JP

Overview

54→
Patents
2005–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 54 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary
H10BElectronic memory devices36%
G11CStatic stores20%
H10DInorganic electric semiconductor devices20%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
H01LSemiconductor devices8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h102%
H10NElectric solid-state devices not otherwise provided for1%
PatentTitleYear
11,133,323High-voltage transistor having shielding gate202111,018,128Semiconductor device2021RE047355Non-volatile semiconductor storage device201910,170,489High-voltage transistor having shielding gate201910,134,733Semiconductor device201810,079,268Memory device2018RE046526'Non-volatile semiconductor storage device'20179,590,052'High-voltage transistor having shielding gate'20179,190,154'Nonvolatile semiconductor memory device'20159,058,882'Nonvolatile semiconductor memory device'20159,035,370'Semiconductor device'20158,994,121'Nonvolatile semiconductor memory device'2015RE045307'Non-volatile semiconductor storage device'20148,885,414'Nonvolatile semiconductor memory device'20148,860,121'Semiconductor device having upper layer portion of semiconductor substrate divided into a plurality of active areas'20148,791,517'Semiconductor device'20148,698,204'Semiconductor memory device'20148,698,274'High-voltage transistor having shielding gate'20148,681,556'Non-volatile semiconductor memory device'20148,625,349'Potential relationship in an erasing operation of a nonvolatile semiconductor memory'20148,604,517'Non-volatile semiconductor memory device for suppressing deterioration in junction breakdown voltage and surface breakdown voltage of transistor'20138,546,909'Nonvolatile semiconductor memory device having air gap proximate to element isolation region and method of manufacturing the same'20138,525,246'Semiconductor storage device and method of manufacturing the same'20138,502,321'Semiconductor device and manufacturing method thereof'20138,482,095'High-voltage transistor having shielding gate'20138,400,812'Semiconductor memory device'20138,399,953'Semiconductor device and method for manufacturing the same'20138,369,144'Semiconductor device and method of manufacturing the same'20138,334,557'Nonvolatile semiconductor storage device including a transfer transistor'20128,319,316'Depletion MOS transistor and enhancement MOS transistor'20128,294,221'Semiconductor memory device'20128,294,238'Nonvolatile semiconductor memory device with reduced size of peripheral circuit area'20128,283,717'Semiconductor storage device'20128,232,608'Semiconductor device and method for manufacturing semiconductor device'20128,072,020'Nonvolatile semiconductor memory device'20117,939,908'High-voltage transistor having shielding gate'20117,911,844'Non-volatile semiconductor storage device'20117,898,854'Semiconductor memory device and method of preliminary data writing to select memory cell transistors'20117,825,497'Method of manufacture of contact plug and interconnection layer of semiconductor device'20107,781,822'Nonvolatile semiconductor memory'20107,615,485'Method of manufacture of contact plug and interconnection layer of semiconductor device'20097,583,533'Semiconductor device with high-breakdown-voltage transistors'20097,504,294'Method of manufacturing an electrically erasable programmable read-only memory (EEPROM)'20097,417,281'Semiconductor device with a selection gate and a peripheral gate'20087,411,825'Semiconductor integrated circuit device'20087,405,440'Nonvolatile semiconductor memory'20087,375,430'Semiconductor device and method of manufacture thereof'20087,374,995'Nonvolatile semiconductor memory device'20087,371,643'Nonvolatile semiconductor memory device'20087,119,413'High-voltage transistor having shielding gate'20067,064,394'Nonvolatile semiconductor memory device'20067,064,379'Nonvolatile semiconductor memory device'20067,015,550'Nonvolatile semiconductor memory device'20066,894,341'Semiconductor device and manufacturing method'2005

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2005–2017Patents assigned to TOSHIBA KK (48)· patent assignee history
2005–2021Based in Yokohama, JP· patent location history
2008–2015Based in Kanagawa, JP· patent location history
2011–2015Patents assigned to KUTSUKAKE HIROYUKI (22)· patent assignee history
2011–2015Patents assigned to KATO YOSHIKO (11)· patent assignee history
2011–2014Patents assigned to NOGUCHI MITSUHIRO (7)· patent assignee history
2013–2014Patents assigned to SUGIMAE KIKUKO (7)· patent assignee history
2015–2021Based in Yokkaichi, JP· patent location history
2018Based in Mie, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK482005–2017
KUTSUKAKE HIROYUKIself222011–2015
KATO YOSHIKO112011–2015
NOGUCHI MITSUHIRO72011–2014
SUGIMAE KIKUKO72013–2014
Locations
LocationPatentsSpan
Yokohama, JP402005–2021
Kanagawa, JP102008–2015
Yokkaichi, JP22015–2021
Mie, JP22018