A co-integrated HBT/FET apparatus and system, and methods for making the same, are disclosed. A co-integrated HBT/FET apparatus may include a first epitaxial structure formed over a substrate, the first epitaxial structure forming, at least in part, a FET device, a separation layer formed over the first epitaxial structure, and a second epitaxial structure formed over the separation layer, the second epitaxial structure forming, at least in part, a heterojunction bipolar transistor (HBT) device.

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IPC · International Patent Classification

Section H — Electricity

H01L29/66

USPC · US Patent Classification

257/195257/E29.218257/192257/E29.171257/197

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