Film forming material, film forming method, and silicide film

The present invention relates to a material for forming, for example, semiconductor wiring films, to a film forming method, and to films.

Recently, the progress in the semiconductor field is remarkable. For example, LSIs are being shifted toward ULSIs. Miniaturization is being developed to improve the signal processing speed. Copper having a low resistance is selected as wiring conductor materials and the spacing between wiring conductors is filled with a material having a very low dielectric constant. There is a demand for thinning films of those materials. Moreover, it has been studied that the gate oxide film is formed of a metal oxide film such as HfO 2 .

Even if the above-mentioned technical idea is adopted, the micro-patterning leads to extremely shallow diffusion layers at the source-drain regions, and thus increases the resistance components thereof. Therefore, it is difficult to improve the signal processing speed.

Not only the contact at the source-drain region but also the resistance of the gate electrode have been perceived as problems. For that reason, it has been long wanted to develop new materials.

In order to overcome such problems, metal silicides such as TiSi 2 or CoSi 2 have been studied (refer to Japanese Patent Laid-open Publication No. H6-204173).

However, it is predicted that TiSi 2 or CoSi 2 has a limit to gain the performance in future.

In view of such a limitation, the present inventor et al. consider that NiSi must be introduced for the future semiconductor elements.

It was considered that the NiSi thin film can be easily produced using the sputtering technique.

However, the sputtering physically damages the semiconductor elements. Moreover, NiSi may react with Si, being a base substrate, at high temperatures to make NiSi 2 . This results in poor film uniformity.

Accordingly, it was found that it is not preferable to form a NiSi film through sputtering.

For that reason, it has been waited that the technique of forming NiSi films at low temperatures through the chemical vapor deposition (CVD) process.

The problem to be solved by the present invention is to provide the technique of forming silicide films such as NiSi films by the CVD process.

In the course of going zealously with the research to solve the above-mentioned problems, the present inventor et al. noticed that it is very important to specify a suitable material as a silicide forming material. As a result of continuing the study based on the knowledge, it has found that the chemical compounds represented with the following formula are very preferable as a Ni source.

Moreover, it has been found that using chemical compounds represented with Si x H (2x+2) or R x SiH (4−x) as a Si source results in a more preferable silicide film.

The present invention was achieved based on the knowledge.

The present invention relates to a method for forming an NiSi (silicide) film, wherein one or more chemical compounds represented with the following general formula [I] are used as an Ni source.

Particularly, the present invention relates to a method for forming an NiSi (silicide) film by a chemical vapor deposition process, wherein one or more chemical compounds represented with the following general formula [I] are used as an Ni source.

That is, the NiSi (silicide) film is formed by a chemical vapor deposition process, in which both Ni compound and Si compound, the Ni compound being represented with the general formula [I], are decomposed.

The present invention relates to a silicide film formed by a chemical vapor deposition process in which Ni compounds and Si compounds are decomposed, wherein the Ni compound is one or more chemical compounds represented with the following general formula [I].

Moreover, the present invention relates to a film forming material for forming an NiSi (silicide) film, wherein an Ni source is one or more chemical compounds represented with the following general formula [I]:

(where R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 9 , or R 10 is H or a hydrocarbon group and is of the same type or a different type, and M=Ni).

In the film forming material, a hydrocarbon group of R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 9 , or R 10 in the general formula [I] is preferably an alkyl group and particularly, an alkyl group having a carbon number of 1 to 12. Particularly, cyclopentadienylallyl nickel, methylcyclopentadienylallyl nickel, ethylcyclopentadienylallyl nickel, isopropylcyclopentadienylallyl nickel, and n-butylcyclopentadienylallyl nickel are listed as preferable chemical compounds.

The Si compound is used to form the silicide film. One or more chemical compounds selected from the group consisting of Si x H (2x+2) (where x is an integer of 1 or more), and R x SiH (4−x) (where R is a hydrocarbon group and x is an integer of 0 to 3, and when there are two or more hydrocarbon groups R(Rs), all Rs are of the same type or a different type) is used for the Si compound. Particularly, SiH 4 , Si 2 H 6 , and Si 3 H 8 are preferable for the Si compound.

Particularly, a reducing agent, preferably, hydrogen is used to form the silicide film.

In order to form the silicide film, the Ni source (the Ni compound) and the Si source (the Si compound) are decomposed at the same time or separately. Preferably, those chemical compounds are decomposed at the same time. For example, heat, plasma, light and laser are used as the decomposition means.

A conductive silicide film is formed using the above-mentioned film forming method. Particularly, the silicide film is formed, for example, in semiconductor elements such as MOSFETs.

Moreover, the present invention provides silicide films containing Ni and Si, formed by the above-mentioned film forming process. Moreover, the present invention provides elements (for example, MOSFETs) to which the silicide film is embodied.

The semiconductor elements having NiSi (silicide) films, where the above-mentioned chemical compounds are used, have higher performances than semiconductor elements having metal silicide films such as TiSi 2 or CoSi 2 .

Particularly, there is not fear that the semiconductor element having silicide films, which are formed with the above-mentioned chemical compounds through the CVD process, may be physically damaged as caused by the sputtering process. Moreover, there is no fear that NiSi 2 is formed through the chemical reaction with Si of the base substrate. Moreover, the present invention provides good film uniformity.

This and other objects, features and advantages of the present invention will become more apparent upon a reading of the following detailed description and drawings, in which:

FIG. 1 is a schematic diagram illustrating a CVD apparatus.

The film forming method according to the present invention relates to a method for forming NiSi (silicide) films. Particularly, the present invention relates to a method for forming NiSi (silicide) films by the CVD process or for forming conductive silicide films. The present invention relates to a method for forming NiSi (silicide) films in semiconductor elements such as MOSFETs. One or more chemical compounds represented with the previous general formulas [I] are used as an Ni source for NiSi (silicide) films.

The film related to the presented invention is a NiSi (silicide) film, particularly, a NiSi (silicide) film or a conductive silicide film, created by the CVD process. In more detail, the film of the present invention relates to a NiSi (silicide) film formed for semiconductor elements such as MOSFETs. One or more chemical compounds represented with the previous general formulas [I] are used as a Ni source for the NiSi (silicide) film.

The film forming material of the present invention is the material forming a NiSi (silicide) film. Particularly, the film forming material is the material for forming a NiSi (silicide) film by the CVD process or for forming a conductive silicide film. In more detail, the film forming material is the material for forming a NiSi (silicide) film for the semiconductor elements such as MOSFETs. The film forming material comprises at least one or more chemical compounds represented with the previous general formulas [I].

A hydrocarbon group of R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 9 , or R 10 in the general formula [I] is, particularly, an alkyl group. The hydrocarbon group is an alkyl group having a carbon number of 1 to 12 and, more particularly, is an alkyl group having a carbon number of 1 to 6. A hydrocarbon group of R 1 , R 2 , R 3 , R 4 , or R 5 is, an alkyl group having a carbon number of 1 to 4. A hydrocarbon group of R 6 , R 7 , R 8 , R 9 , or R 10 is, an alkyl group having a carbon number of 1 to 6. Such alkyl groups are particularly preferable because a moderate vapor pressure can be easily obtained in the CVD process.

Particularly preferable chemical compounds of the Ni compounds will be listed up below. For example, as the Ni compound are listed cyclopentadienylallyl nickel, methylcyclopentadienylallyl nickel, ethylcyclopentadienylallyl nickel, isopropylcyclopentadienylallyl nickel, and n-butylcyclopentadienylallyl nickel.

Si compound is used to form the silicide film. In order to form the silicide film, Si x H (2x+2) (where x is an integer of 1 or more), or R x SiH (4−x) (where R is a hydrocarbon group (preferably, an alkyl group or an alkyl group having a carbon number of 1 to 12) and x is an integer of 0 to 3, and when there are two or more Rs, all Rs are of the same type or a different type) are used.

Particularly, of the Si compounds, SiH 4 , Si 2 H 6 , and Si 3 H 8 , for example, are preferable.

Particularly, a reducing agent, for example, hydrogen, is used to form the silicide film.

In the formation of the silicide film, the Ni source (the Ni compound) and the Si source (the Si compound) are decomposed simultaneously or separately. Particularly, both the sources are decomposed simultaneously. For example, heat, plasma, light, laser, and the equivalents are used as the decomposition means.

The conductive silicide film is formed as described above. For example, a silicide film is formed for semiconductor elements (e.g. MOSFETs) having the silicide films.

The embodiment will be described below in detail.

FIG. 1 is a schematic diagram illustrating a chemical vapor deposition (CVD) apparatus. Referring to FIG. 1 , numeral 1 a , 1 b represents a raw material container, 2 represents a heater, 3 represents a decomposition reactor, 4 represents a Si substrate, and 5 represents a gas flow controller.

The container 1 a held cyclopentadienylallyl nickel [C 5 H 5 NiC 3 H]. This Ni compound was heated at 30° C. Argon gas was blown in as carrier gas at a rate of 30 ml/min. The vaporized C 5 H 5 NiC 3 H 5 was introduced into the decomposition reactor 3 , together with the carrier gas. At this time, the inside of the system was evacuated to 1 to 500 Torr. The substrate 4 was heated at 250° C.

When C 5 H 5 NiC 3 H 5 was introduced into the decomposition reactor 3 , Si 3 H 8 diluted to 1% with hydrogen (a reducing agent) was introduced into the decomposition reactor 3 at a rate of 20 ml/min.

Thus, the film was formed on the substrate 4 .

The resultant film was examined by the X-ray photoelectron spectroscopy (XPS). As a result, the existence of Ni and Si was found. Moreover, in the examination with the X-ray (XRD), it was ascertained that the film is a NiSi film. Moreover, under the cross section TEM (transmission electron microscope), the interface between the base substrate Si and the NiSi film was very flat. Moreover, it was found that no reaction arises in the interface (Si).

Therefore, the NiSi film is preferable to the next generation semiconductor elements.

In contrast, a NiSi film was formed through the sputtering process, as shown in the conventional practice. In this case, a large number of pyramid-like NiSi 2 invading the base substrate were observed. The interface was not flat.

In the embodiment 1, a similar process was carried out using methylcyclopentadienylallyl nickel [(CH 3 ) C 5 H 4 NiC 3 H 5 ], instead of C 5 H 5 NiC 3 H 5 . A film was formed on the substrate 4 .

This film was examined using the XPS. As a result, the existence of Ni and Si was found. When the film was examined using the XRD, it was found that the film is a NiSi film. According to the cross-section TEM, the interface between the base substrate Si and the NiSi film was very flat. Moreover, it was found that there is no reaction in the interface (Si).

Therefore, the NiSi film is preferable to the next generation semiconductor elements.

In the embodiment 1, a similar process was carried out using ethylcyclopentadienylallyl nickel [(C 2 H 5 ) C 5 H 4 NiC 3 H 5 ], instead of C 5 H 5 NiC 3 H. A film was formed on the substrate 4 .

The film was examined using the XPS. As a result, the existence of Ni and Si was found. When the film was examined using the XRD, it was found that the film is a NiSi film. Under the cross-sectional TEM, the interface between the base substrate Si and the NiSi film was very flat. It was found that there is no reaction in the interface (Si).

Therefore, the NiSi film is preferable to the next generation semiconductor elements.

In the embodiment 1, a similar process was carried out using isopropylcyclopentadienylallyl nickel [i-C 3 H 7 C 5 H 4 NiC 3 H 5 ], instead of C 5 H 5 NiC 3 H 5 . A film was formed on the substrate 4 .

The film was examined using the XPS. As a result, the existence of Ni and Si was found. When the film was examined using the XRD, it was found that the film is a NiSi film. Under the cross-sectional TEM, the interface between the base substrate Si and the NiSi film was very flat. It was found that there is no reaction in the interface (Si).

Therefore, the NiSi film is preferable to the next generation semiconductor elements.

In the embodiment 1, a similar process was carried out using n-butylcyclopentadienylallyl nickel [(n-C 4 H 9 )C 5 H 4 NIC 3 H 5 ], instead of C 5 H 5 NiC 3 H 5 . A film was formed on the substrate 4 .

The film was examined using the XPS. As a result, the existence of Ni and Si was found. When the film was examined using the XRD, it was found that the film is a NiSi film. Under the cross-sectional TEM, the interface between the base substrate Si and the NiSi film was very flat. It was found that there is no reaction in the interface (Si).

Therefore, the NiSi film is preferable to the next generation semiconductor elements.

Embodiments 6 and 7

In the embodiment 1, a similar process was carried out using SiH 4 or Si 2 H 6 , instead of Si 3 H 8 . A film was formed on the substrate 4 .

The film was examined using the XPS. As a result, the existence of Ni and Si was found. When the film was examined using the XRD, it was found that the film is a NiSi film. Under the cross-sectional TEM, the interface between the base substrate Si and the NiSi film was very flat. It was found that there is no reaction in the interface (Si).

Therefore, the NiSi film is preferable to the next generation semiconductor elements.

Embodiments 8 and 9

In the embodiment 2, a similar process was carried out using SiH 4 or Si 2 H 6 , instead of Si 3 H 8 . A film was formed on the substrate 4 .

The film was examined using the XPS. As a result, the existence of Ni and Si was found. When the film was examined using the XRD, it was found that the film is a NiSi film. Under the cross-sectional TEM, the interface between the base substrate Si and the NiSi film was very flat. It was found that there is no reaction in the interface (Si)

Therefore, the NiSi film is preferable to the next generation semiconductor elements.

Embodiments 10 and 11

In the embodiment 3, a similar process was carried out using SiH 4 or Si 2 H 6 , instead of Si 3 H 8 . A film was formed on the substrate 4 .

The film was examined using the XPS. As a result, the existence of Ni and Si was found. When the film was examined using the XRD, it was found that the film is a NiSi film. Under the cross-sectional TEM, the interface between the base substrate Si and the NiSi film was very flat. It was found that there is no reaction in the interface (Si).

Therefore, the NiSi film is preferable to the next generation semiconductor elements.

Embodiments 12 and 13:

In the embodiment 4, a similar process was carried out using SiH 4 or Si 2 H 6 , instead of Si 3 H 8 . A film was formed on the substrate 4 .

The film was examined using the XPS. As a result, the existence of Ni and Si was found. When the film was examined using the XRD, it was found that the film is a NiSi film. Under the cross-sectional TEM, the interface between the base substrate Si and the NiSi film was very flat. It was found that there is no reaction in the interface (Si).

Therefore, the NiSi film is preferable to the next generation semiconductor elements.

Embodiments 14 and 15

In the embodiment 5, a similar process was carried out using SiH 4 or Si 2 H 6 , instead of Si 3 H 8 . A film was formed on the substrate 4 .

The film was examined using the XPS. As a result, the existence of Ni and Si was found. When the film was examined using the XRD, it was found that the film is a NiSi film. Under the cross-sectional TEM, the interface between the base substrate Si and the NiSi film was very flat. It was found that there is no reaction in the interface (Si).

Therefore, the NiSi film is preferable to the next generation semiconductor elements.

Embodiments 16, 17, and 18:

In the embodiment 1, the compound decomposition was carried out through irradiating plasma, light, or laser, instead of heating. Thus, a film was formed on the substrate 4 .

The film was examined using the XPS. As a result, the existence of Ni and Si was found. When the film was examined using the XRD, it was found that the film is a NiSi film. Under the cross-sectional TEM, the interface between the base substrate Si and the NiSi film was very flat. It was found that there is no reaction in the interface (Si).

Therefore, the NiSi film is preferable to the next generation semiconductor elements.

The present invention is particularly useful in the field of semiconductors.