LexDanaLexDanabeta
Inventor

Yoshio Ohshita

Inventor
Aichi, JP

Overview

4→
Patents
1996–2007
Patent span
Electricity
Primary field (CPC H)

Patents· 4 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1038%
C23CCoating metallic material25%
C23FNon-mechanical removal of metallic material from surface13%
H10DInorganic electric semiconductor devices13%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
PatentTitleYear
7,312,140'Film forming method'20077,045,457'Film forming material, film forming method, and silicide film'20065,789,321'Method for forming a barrier metal layer made of titanium nitride on a silicon substrate'19985,515,985'Method of forming fine copper conductor pattern'1996

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1996–1998Patents assigned to NEC CORP (2)· patent assignee history
1996–1998Based in Tokyo, JP· patent location history
2006–2007Patents assigned to TRI CHEMICAL LAB INC (2)· patent assignee history
2006–2007Based in Aichi, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
NEC CORP21996–1998
TRI CHEMICAL LAB INC22006–2007
Locations
LocationPatentsSpan
Aichi, JP22006–2007
Tokyo, JP21996–1998