Method of forming film, method of manufacturing semiconductor device, and film forming apparatus

The present invention provides a deposition method and deposition apparatus capable of forming a fluorine-containing silicon inorganic insulating film of stable film properties and a method of manufacturing a semiconductor device. Deposition apparatus 10 comprises parallel plate type electrodes 16, 22 arranged within reaction chamber 12 , gas supply sources 20, 32, 34 for feeding process gas containing SiH 4 , SiF 4 and oxygen source substance into reaction chamber 12 , valves 36, 38, 40 , gas mixing chamber 28 and power source 44 that supplies RF power for generating the plasma of the process gas. In this deposition apparatus 10 , power source 44 is capable of supplying RF power of at least 1000 Watts to parallel plate type electrodes 16, 22 . In this apparatus 10 , fluorine-containing silicon oxide film is deposited on wafer 14 by generating the plasma of process gas containing SiH 4 , SiF 4 and N 2 O.