The present invention provides a deposition method and deposition apparatus capable of forming a fluorine-containing silicon inorganic insulating film of stable film properties and a method of manufacturing a semiconductor device. Deposition apparatus 10 comprises parallel plate type electrodes 16, 22 arranged within reaction chamber 12 , gas supply sources 20, 32, 34 for feeding process gas containing SiH 4 , SiF 4 and oxygen source substance into reaction chamber 12 , valves 36, 38, 40 , gas mixing chamber 28 and power source 44 that supplies RF power for generating the plasma of the process gas. In this deposition apparatus 10 , power source 44 is capable of supplying RF power of at least 1000 Watts to parallel plate type electrodes 16, 22 . In this apparatus 10 , fluorine-containing silicon oxide film is deposited on wafer 14 by generating the plasma of process gas containing SiH 4 , SiF 4 and N 2 O.

Claims

16 · 2 independent · depth 2

16 granted claims

›1.independentA deposition method of forming a silicon inorganic insulating film on a substrate, comprising:nplacing a substrate in a semiconductor manufacturing ap…+9

›2.↳ 1The deposition method according to claim 1 wherein RF power applied to said parallel plate type electrodes is 1000 Watts or more.d2

›3.↳ 1The deposition method according to claim 1 wherein RF power applied to said parallel plate type electrodes is 1400 Watts or more.d2

›4.↳ 1The deposition method according to claim 1, wherein said oxygen source substance includes at least one substance of N2O, NO, N2O3, N2O5, NO3, N2O4 and…d2

›5.↳ 1The deposition method according to claim 1, wherein said oxygen source substance includes at least one substance of O2 and O3.d2

›6.↳ 1The deposition method according to claim 1, wherein said oxygen source substance includes at least one substance of CO, CO2 and H2O.d2

›7.↳ 1The deposition method according to claim 1, wherein RF power applied to said parallel plate type electrodes is at least 4 Watts/sccm of a total combin…d2

›8.↳ 1The deposition method according to claim 1, wherein RF power applied to said parallel plate type electrodes is modulated with a single frequency.d2

›9.↳ 1The deposition method according to claim 1, wherein the pressure in said reaction chamber in said deposition step is not more than 666 Pa.d2

›10.↳ 1The deposition method according to claim 1, wherein the deposition temperature in said deposition step is not more than 480° C.d2

›11.independentA method of manufacturing a semiconductor device having conductive portions of a damascene structure on a substrate, comprising:ndepositing a fluorine…+5

Classifications

7 codes

IPC · International Patent Classification

Section H — Electricity

H01L021/31

USPC · US Patent Classification

438/778438/784438/788438/624438/776257/759

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David Nelms

art unit 2818 · TC 2800

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Type	Document	Date
related publication	US 20020048969 A1	25 Apr 2002

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