Inventor

Akio Nakagawa

Inventor

Hiratsuka, JP

Overview

1981–2020

Patent span

Electricity

Primary field (CPC H)

Patents· 168 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices50%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%

H03KPulse technique5%

G06FElectric digital data processing4%

H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems4%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%

H01LSemiconductor devices2%

H03LAutomatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses2%

H04NPictorial communication, e.g. television1%

PatentTitleYear

10,707,300Semiconductor device2020 10,297,683Method of manufacturing a semiconductor device having two types of gate electrodes2019 10,229,970Semiconductor device having schottky electrode connected to anode region2019 10,199,454Semiconductor device having schottky electrode connected to anode region2019 9,899,503'Semiconductor device having first and second gate electrodes'2018 9,711,628'Semiconductor device'2017 9,292,777'Information processing apparatus, information processing method, and storage medium'2016 9,214,536'Lateral insulated gate bipolar transistor'2015 8,981,826'Semiconductor device'2015 8,972,769'Data processing apparatus and control method for controlling clock frequency based on calculated frequency-to-response-time ratios'2015 8,854,033'Current sensor, inverter circuit, and semiconductor device having the same'2014 8,791,690'Current sensor, inverter circuit, and semiconductor device having the same'2014 8,760,206'Semiconductor device'2014 8,742,534'Semiconductor device having lateral diode'2014 8,707,132'Information processing apparatus, information processing method, and storage medium'2014 8,497,720'Semiconductor device'2013 8,411,988'Image processing apparatus and method for managing margin data'2013 8,354,691'Lateral insulated-gate bipolar transistor'2013 8,248,128'Semiconductor device'2012 8,049,270'Semiconductor device'2011 8,031,954'Image encoding apparatus and control method thereof using prediction encoding and pixel classification'2011 7,973,580'Semiconductor device'2011 7,893,744'Semiconductor device'2011 7,868,418'Semiconductor device'2011 7,821,043'Insulated gate bipolar transistor'2010 7,663,186'Semiconductor device'2010 7,633,153'Semiconductor module'2009 7,579,669'Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof'2009 7,564,097'Trench-gated MOSFET including schottky diode therein'2009 7,557,545'Electric power unit operating in continuous and discontinuous conduction modes and control method therefor'2009 7,514,783'Semiconductor module'2009 7,503,654'Pupil reaction ascertaining device and fatigue recovery promoting device'2009 7,432,579'Semiconductor device with horizontal MOSFET and Schottky barrier diode provided on single substrate'2008 7,358,566'Semiconductor device'2008 7,230,297'Trench-gated MOSFET including schottky diode therein'2007 7,227,225'Semiconductor device having a vertical MOS trench gate structure'2007 7,138,698'Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof'2006 7,115,946'MOS transistor having an offset region'2006 7,061,048'Power MOSFET device'2006 7,061,060'Offset-gate-type semiconductor device'2006 7,061,047'Semiconductor device having trench gate structure and manufacturing method thereof'2006 7,034,357'Insulated gate semiconductor device'2006 7,026,214'Offset-gate-type semiconductor device'2006 6,977,414'Semiconductor device'2005 RE038907'Semiconductor device'2005 6,914,294'Semiconductor device'2005 6,879,005'High withstand voltage semiconductor device'2005 6,878,992'Vertical-type power MOSFET with a gate formed in a trench'2005 6,864,533'MOS field effect transistor with reduced on-resistance'2005 6,838,730'Semiconductor device'2005 6,818,945'Semiconductor device'2004 6,740,830'Trigger switch'2004 6,720,618'Power MOSFET device'2004 6,705,574'Cable mounting structure'2004 6,690,085'High-voltage semiconductor device used as switching element or the like'2004 6,686,613'Punch through type power device'2004 6,683,343'High voltage semiconductor device having two buffer layer'2004 6,664,591'Insulated gate semiconductor device'2003 6,657,147'Key switch'2003 6,620,653'Semiconductor device and method of manufacturing the same'2003 6,617,641'High voltage semiconductor device capable of increasing a switching speed'2003 6,614,077'Semiconductor device improved in ESD reliability'2003 6,614,089'Field effect transistor'2003 6,605,844'Semiconductor device'2003 6,563,193'Semiconductor device'2003 6,552,389'Offset-gate-type semiconductor device'2003 6,469,346'High-breakdown-voltage semiconductor device'2002 6,452,231'Semiconductor device'2002 6,411,133'Semiconductor device'2002 6,380,566'Semiconductor device having FET structure with high breakdown voltage'2002 6,297,534'Power semiconductor device'2001 6,259,136'High-breakdown-voltage semiconductor device'2001 6,236,069'Insulated-gate thyristor'2001 6,211,549'High breakdown voltage semiconductor device including first and second semiconductor elements'2001 6,163,051'High breakdown voltage semiconductor device'2000 6,150,702'Lateral high-voltage semiconductor device having an outwardly extended electrode'2000 6,133,617'High breakdown voltage semiconductor device'2000 6,133,607'Semiconductor device'2000 6,118,149'Trench gate MOSFET'2000 6,064,086'Semiconductor device having lateral IGBT'2000 6,049,109'Silicon on Insulator semiconductor device with increased withstand voltage'2000 6,025,622'Conductivity modulated MOSFET'2000 5,997,142'Eye test method using red and green marks and red/green tester used in the eye test method'1999 5,994,739'Integrated circuit device'1999 5,994,740'Semiconductor device'1999 5,985,708'Method of manufacturing vertical power device'1999 5,982,015'High breakdown voltage semiconductor device'1999 5,932,897'High-breakdown-voltage semiconductor device'1999 5,920,087'Lateral IGBT'1999 5,894,164'High voltage semiconductor device'1999 5,838,026'Insulated-gate semiconductor device'1998 5,796,125'High breakdown voltage semiconductor device using trench grooves'1998 5,793,065'Insulated-gate thyristor'1998 5,780,887'Conductivity modulated MOSFET'1998 5,751,022'Thyristor'1998 5,731,603'Lateral IGBT'1998 5,714,782'Composite integrated circuit device'1998 5,708,287'Power semiconductor device having an active layer'1998 5,688,702'Process of making a semiconductor device using a silicon-on-insulator substrate'1997 5,689,121'Insulated-gate semiconductor device'1997 5,640,040'High breakdown voltage semiconductor device'1997 5,637,909'Semiconductor device and method of manufacturing the same'1997 5,606,689'Data processing apparatus including external storage previously reserved to be allocated to job groups'1997 5,592,014'High breakdown voltage semiconductor device'1997 5,585,651'Insulated-gate semiconductor device having high breakdown voltages'1996 5,548,150'Field effect transistor'1996 5,536,961'High breakdown voltage semiconductor device'1996 5,512,774'Dielectrically isolated substrate and semiconductor device using the same'1996 5,510,647'Semiconductor device and method of manufacturing the same'1996 5,477,065'Lateral thin film thyristor with bevel'1995 5,464,994'Insulated-gate thyristor'1995 5,463,231'Method of operating thyristor with insulated gates'1995 5,448,083'Insulated-gate semiconductor device'1995 5,438,220'High breakdown voltage semiconductor device'1995 5,434,444'High breakdown voltage semiconductor device'1995 5,428,228'Method of operating thyristor with insulated gates'1995 5,381,026'Insulated-gate thyristor'1995 5,378,920'High breakdown voltage semiconductor device'1995 5,369,734'Method for processing and displaying hidden-line graphic images'1994 5,343,067'High breakdown voltage semiconductor device'1994 5,332,920'Dielectrically isolated high and low voltage substrate regions'1994 5,323,041'High-breakdown-voltage semiconductor element'1994 5,315,134'Thyristor with insulated gate'1994 5,294,825'High breakdown voltage semiconductor device'1994 5,286,984'Conductivity modulated MOSFET'1994 5,272,365'Silicon transistor device with silicon-germanium electron gas hetero structure channel'1993 5,241,210'High breakdown voltage semiconductor device'1993 5,237,186'Conductivity-modulation metal oxide field effect transistor with single gate structure'1993 5,212,396'Conductivity modulated field effect transistor with optimized anode emitter and anode base impurity concentrations'1993 5,210,432'Insulated gate GTO thyristor'1993 5,168,333'Conductivity-modulation metal oxide semiconductor field effect transistor'1992 5,162,876'Semiconductor device having high breakdown voltage'1992 5,159,427'Semiconductor substrate structure for use in power IC device'1992 5,144,401'Turn-on/off driving technique for insulated gate thyristor'1992 5,124,773'Conductivity-modulation metal oxide semiconductor field effect transistor'1992 5,105,243'Conductivity-modulation metal oxide field effect transistor with single gate structure'1992 5,103,415'Computer-simulation technique for numerical analysis of semiconductor devices'1992 5,097,314'Dielectrically isolated substrate with isolated high and low breakdown voltage elements'1992 5,093,701'Conductivity modulated MOSFET'1992 5,086,332'Planar semiconductor device having high breakdown voltage'1992 5,086,323'Conductivity modulated MOSFET'1992 5,072,287'Semiconductor device and method of manufacturing the same'1991 5,068,704'Method of manufacturing semiconductor device'1991 5,068,700'Lateral conductivity modulated MOSFET'1991 5,049,968'Dielectrically isolated substrate and semiconductor device using the same'1991 4,994,696'Turn-on/off driving technique for insulated gate thyristor'1991 4,994,904'MOSFET having drain voltage detection function'1991 4,980,743'Conductivity-modulation metal oxide semiconductor field effect transistor'1990 4,963,972'Gate turn-off thyristor with switching control field effect transistor'1990 4,959,703'Turn-on/off driving technique for insulated gate thyristor'1990 4,935,386'Method of manufacturing semiconductor device including substrate bonding and outdiffusion by thermal heating'1990 4,928,155'Lateral conductivity modulated MOSFET'1990 4,914,496'Gate turn-off thyristor with independent turn-on/off controlling transistors'1990 4,881,120'Conductive modulated MOSFET'1989 4,878,957'Dielectrically isolated semiconductor substrate'1989 4,866,315'Turn-on/off driving technique for insulated gate thyristor'1989 4,821,083'Thyristor drive system'1989 RE032784'Conductivity modulated MOS transistor device'1988 4,782,372'Lateral conductivity modulated MOSFET'1988 4,760,431'Gate turn-off thyristor with independent turn-on/off controlling transistors'1988 4,719,531'Overcurrent protective circuit for modulated-conductivity type MOSFET'1988 4,717,940'MIS controlled gate turn-off thyristor'1988 4,700,466'Method of manufacturing semiconductor device wherein silicon substrates are bonded together'1987 4,689,647'Conductivity modulated field effect switch with optimized anode emitter and anode base impurity concentrations'1987 4,680,604'Conductivity modulated MOS transistor device'1987 4,672,407'Conductivity modulated MOSFET'1987 4,567,502'Planar type semiconductor device with a high breakdown voltage'1986 4,243,999'Gate turn-off thyristor'1981

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1981–2003Based in Hiratsuka, JP· patent location history

1987–2015Patents assigned to TOSHIBA KK (143)· patent assignee history

1992–2015Based in Kanagawa, JP· patent location history

1999–2016Based in Yokohama, JP· patent location history

2003–2009Based in Fujisawa, JP· patent location history

2008–2020Based in Chigasaki, JP· patent location history

2011–2016Patents assigned to CANON KK (5)· patent assignee history

2012–2015Patents assigned to NAKAGAWA AKIO (8)· patent assignee history

2013–2015Patents assigned to DENSO CORP (4)· patent assignee history

2017–2020Patents assigned to FUJI ELECTRIC CO LTD (5)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TOSHIBA KK	143	1987–2015
NAKAGAWA AKIOself	8	2012–2015
CANON KK	5	2011–2016
FUJI ELECTRIC CO LTD	5	2017–2020
DENSO CORP	4	2013–2015

Locations

Location	Patents	Span
Hiratsuka, JP	86	1981–2003
Fujisawa, JP	25	2003–2009
Kanagawa, JP	18	1992–2015
Yokohama, JP	17	1999–2016
Chigasaki, JP	15	2008–2020