Inventor
Do Hwan Kim
Inventor
Seoul, KR
Overview
Patents· 77 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices12%
H10KOrganic electric solid-state devices8%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation7%
F21VFunctional features or details of lighting devices or systems thereof4%
F21YIndexing scheme associated with subclasses f21k, f21l, f21s and f21v, relating to the form or the kind of the light sources or of the colour of the light emitted4%
F21KNon-electric light sources using luminescence4%
H10HInorganic light-emitting semiconductor devices having potential barriers4%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution4%
C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds3%
G06FElectric digital data processing3%
PatentTitleYear
11,000,829Super absorbent polymer and method for producing same202110,982,144Silicon nitride layer etching composition and etching method using the same202110,962,733Camera module and optical apparatus comprising same202110,941,351Layer-separation method of spent caustic solution202110,941,125Proxisome proliferator activated receptor (PPAR) compounds and methods of using the same202110,937,511Semiconductor memory device, memory system including controller, and method of operating controller202110,928,301Apparatus for measuring moisture of solid sample, method for measuring moisture content of solid sample, and method for analyzing imidization ratio202110,920,142Polysiloxane-based compound, silicon nitride layer etching composition including the same202110,923,420Semiconductor device including dummy contact202110,922,167Storage device and operating method thereof202110,910,070Storage device and operating method thereof202110,910,792Hybrid silicon lasers on bulk silicon substrates202110,909,124Predicting intent of a search for a particular context202110,794,585Light source unit202010,793,223Bicycle transmission hub202010,734,425Image sensor and method for fabricating the same202010,684,179Visco-poroelastic elastomer-based capacitor type tactile sensor202010,655,839Light source unit202010,648,105Nanofiber based composite false twist yarn and manufacturing method therefor202010,529,937Method of manufacturing organic semiconductor device202010,464,295Protective film and electronic appliance including the same201910,411,216Light emitting device and manufacturing method therefor201910,333,033Light emitting device and light source module having thereof2019RE047425Lighting device having reflectors for indirect light emission201910,260,734Light source unit201910,164,190Organic semiconductor compound and method for manufacturing the same201810,164,632Ionic elastomer based capacitor type tactile sensor and method for manufacturing the same201810,090,348Image sensor having guard dams201810,038,028Image sensor including depletion inducing layer201810,032,811Image sensor and method for fabricating the same201810,001,250Lighting device20189,933,888Multimodal sensor and manufacturing method thereof20189,911,775'Image sensor and method for fabricating the same'20189,899,453'Pixel of a multi-stacked CMOS image sensor and method of manufacturing the same'20189,865,634'Image sensor with a reset transistor having spontaneous polarization characteristcs and method for operating the same'20189,624,818'Cooling apparatus of bus'20179,608,225'Light emitting device and method of fabricating the same'20179,562,679'Lighting device'20179,562,674'Lighting device'20179,528,693'Lighting device'20169,484,374'Image sensor and method for fabricating the same'20169,475,986'Red phosphor and light-emitting device comprising the same'20169,356,068'Image sensor and method for fabricating the same'20169,353,915'Lighting device'20169,287,309'Isolation structure having a second impurity region with greater impurity doping concentration surrounds a first impurity region and method for forming the same, and image sensor including the isolation structure and method for fabricating the image sensor'20169,252,178'Pixel of a multi-stacked CMOS image sensor and method of manufacturing the same'20169,202,950'Image sensor having 3D photoelectric conversion device'20159,190,440'Image sensor and method for fabricating the same'20159,184,203'Image sensor and method for fabricating the same'20159,159,755'Image sensor and method for fabricating the same'20159,159,754'Image sensor having anti-reflective layer and fabricating method thereof'20159,035,340'Red phosphor, method for preparing same, and light-emitting device comprising same'20159,023,980'Organic passivation layer composition, transistor and/or electronic device including organic passivation layer fabricated therefrom'20158,937,342'CMOS image sensor having optical block area'20158,931,921'Lighting device'20158,847,206'Surface modifying agent, laminated structure and transistor including the same, and method of manufacturing the laminated structure'20148,821,758'Complex crystal phosphor, light emitting device, surface light source apparatus, display apparatus, and lighting device'20148,816,330'Organic semiconductor composition, and transistor and electronic device including a polymer therefrom'20148,809,839'Organic semiconductor polymer, transistor including an organic semiconductor polymer and methods of fabricating the same'20148,679,984'Method of manufacturing electric device, array of electric devices, and manufacturing method therefor'20148,680,755'Lighting device having reflectors for indirect light emission'20148,617,709'Functionalized metal nanoparticle, buffer layer including the same and electronic device including the buffer layer'20138,476,682'Image sensor'20138,395,687'Methods for operating image sensors'20138,373,161'Organic thin film transistor'20138,373,158'Surface modifying agent, laminated structure and transistor including the same, and method of manufacturing the laminated structure'20138,354,533'Nitrogen-containing heteroaromatic ligand-transition metal complexes, buffer layer comprising the complexes and organic thin film transistor comprising the buffer layer'20138,331,599'Speaker device for mobile terminal'20128,283,038'Layered structure including graphene and an organic material having a conjugated system, and method of preparing the same'2012D0666748'LED lamp'20128,114,704'Method for fabricating an organic thin film transistor'20128,053,575'Nitrogen-containing heteroaromatic ligand-transition metal complexes, buffer layer comprising the complexes and organic thin film transistor comprising the buffer layer'20117,892,355'Preparation of single-crystalline polyalkylthiophene structures by surface-induced self-assembly'20117,868,322'Method for fabricating an organic thin film transistor by oxidation and selective reduction of organic semiconductor material'20117,855,121'Method of forming organic thin film and method of manufacturing semiconductor device using the same'20107,781,763'Composition for forming passivation layer and organic thin film transistor comprising the passivation layer'20107,777,221'Organic semiconducting copolymer and organic electronic device including the same'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2021Patents assigned to SAMSUNG ELECTRONICS CO LTD (26)· patent assignee history
2010–2021Based in Seoul, KR· patent location history
2012–2021Patents assigned to LG INNOTEK CO LTD (14)· patent assignee history
2012–2020Patents assigned to KIM DO HWAN (13)· patent assignee history
2012–2017Patents assigned to KIM DO-HWAN (9)· patent assignee history
2012–2020Based in Anyang-si, KR· patent location history
2015–2021Patents assigned to SK HYNIX INC (18)· patent assignee history
2015–2021Based in Gyeonggi-do, KR· patent location history
2015–2020Based in Chungcheongbuk-do, KR· patent location history
2021Based in Daejeon, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 26 | 2010–2021 |
| SK HYNIX INC | 18 | 2015–2021 |
| LG INNOTEK CO LTD | 14 | 2012–2021 |
| KIM DO HWANself | 13 | 2012–2020 |
| KIM DO-HWANself | 9 | 2012–2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Seoul, KR | 27 | 2010–2021 |
| Anyang-si, KR | 14 | 2012–2020 |
| Gyeonggi-do, KR | 12 | 2015–2021 |
| Chungcheongbuk-do, KR | 4 | 2015–2020 |
| Daejeon, KR | 3 | 2021 |