USPatentGranted
B2Surface modifying agent, laminated structure and transistor including the same, and method of manufacturing the laminated structure
Granted 12 Feb 2013 · 2 office actions
Assignee: Samsung Electronics
Law firm: Law firm · Log in to unlock
Attorney: Attorney · Log in to unlock
Inventors: Do-hwan Kim, Eun-jeong Jeong, Bang-lin Lee, Jeong-il Park +2 · Examiner: Edward Wojciechowicz · AU 2895 · TC 2800
Application
12/656,685
filed 12 Feb 2010
Publication
US 20100200842
published 12 Aug 2010
Patent· this page
US 8,373,158
granted 12 Feb 2013
43
Claims
4 independent
81
File wrapper
transactions
2030
20-year term
term adjustment not held
none
Litigation
checked
20
Classifications
H01L29/72
18
Citations
18 cites · 0 cited by
Life of the patent
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Abstract
Disclosed is a surface modifying agent including a compound having an ethynyl group at one terminal end, a laminated structure manufactured using the surface modifying agent, a method of manufacturing the laminated structure, and a transistor including the same.
Claims
43 · 4 independent · depth 643 granted claims
›1.independentA surface modifying agent comprising a compound represented by the following Chemical Formula 1:
›2.independentA laminated structure comprising:nat least one thin film including a group selected from groups represented by one of Chemical Formula 2 through Chemi…+16
›3.↳ 2The laminated structure of claim 2, wherein the at least one thin film includes first and second thin films, the second thin film on a surface of the …d2+15
›4.↳ 3The laminated structure of claim 3, wherein the second thin film includes at least two regions having different surface characteristics from each othe…d3+10
›9.↳ 4The laminated structure of claim 4, wherein the at least two regions include first and second regions, the first region having a group represented by …d4+1
›10.↳ 9The laminated structure of claim 9, wherein a surface of the first region is treated with H2 plasma and a surface of the second region is not treated …d5
›11.↳ 4The laminated structure of claim 4, wherein the at least two regions include first and second regions, the first region having a group represented by …d4+3
›12.↳ 11The laminated structure of claim 11, wherein a surface of the second region includes a heterocyclized surface and the first region includes a non-hete…d5+2
›13.↳ 12The laminated structure of claim 12, further comprising:na metal layer on the heterocyclized second region, the metal layer including at least one met…d6
›14.↳ 12The laminated structure of claim 12, further comprising:nan organic material bound to the non-heterocyclized first region, the organic material includ…d6
›15.↳ 4The laminated structure of claim 4, wherein the at least two regions include first and second regions, the first region having a group represented by …d4+1
›16.↳ 15The laminated structure of claim 15, wherein the first region includes a UV light-treated surface and the second region includes a non-UV light-treate…d5
›17.↳ 4The laminated structure of claim 4, wherein the at least two regions include first and second regions, the first region having a group represented by …d4+1
›18.↳ 17The laminated structure of claim 17, wherein a surface of the second region includes a heterocyclized surface and the first region includes a non-hete…d5
›5.↳ 3The laminated structure of claim 3, wherein the first thin film includes an inorganic material, an organic material, or a composite of an inorganic ma…d3+3
›6.↳ 5The laminated structure of claim 5, wherein the organic material includes plastic and the inorganic material includes at least one of a glass and a me…d4
›7.↳ 5The laminated structure of claim 5, wherein the first thin film includes one selected from the group consisting of silicon (Si), aluminum (Al), indium…d4
›8.↳ 5The laminated structure of claim 5, wherein the first and second thin films are on a substrate, the substrate being formed of the same material as the…d4
›19.independentA transistor comprising:nat least one thin film having a first region including a group represented by the one of the following Chemical Formula 3 and…+15
›20.↳ 19The transistor of claim 19, wherein the at least one thin film includes first and second thin films, the second thin film on a surface of the first th…d2+11
›21.↳ 20The transistor of claim 20, wherein the second thin film comprises the first and second regions having different surface characteristics from each oth…d3+6
›26.↳ 21The transistor of claim 21, wherein the first region has a group represented by Chemical Formula 3 and the second region has a group represented by Ch…d4+3
›27.↳ 26The transistor of claim 26, wherein a surface of the second region includes a heterocyclized surface and the first region includes a non-heterocyclize…d5+2
›28.↳ 27The transistor of claim 27, further comprising:na metal layer on the heterocyclized second region, the metal layer including at least one metal select…d6
›29.↳ 27The transistor of claim 27, further comprising:nan organic material bound to the non-heterocyclized first region, the organic material including at le…d6
›30.↳ 21The transistor of claim 21, wherein the first region has a group represented by Chemical Formula 4 and the second region has a group represented by Ch…d4+1
›31.↳ 30The transistor of claim 30, wherein a surface of the second region includes a heterocyclized surface and the first region includes a non-heterocyclize…d5
›22.↳ 20The transistor of claim 20, wherein the first thin film includes an inorganic material, an organic material, or a composite of an inorganic material a…d3+3
›23.↳ 22The transistor of claim 22, wherein the organic material includes plastic and the inorganic material includes at least one of a glass and a metal.d4
›24.↳ 22The transistor of claim 22, wherein the first thin film includes one selected from the group consisting of silicon (Si), aluminum (Al), indium (In), t…d4
›25.↳ 22The transistor of claim 22, wherein the first and second thin films are on a substrate, the substrate being formed of the same material as the first t…d4
›32.↳ 19The transistor of claim 19, wherein the organic semiconductor is on a gate electrode and a gate insulating layer is between the organic semiconductor …d2
›33.↳ 19The transistor of claim 19, further comprising:na gate electrode on the organic semiconductor; anda gate insulating layer between the organic semicond…d2
›34.↳ 19The transistor of claim 19, wherein the metal layer includes at least one metal selected from the group consisting of copper (Cu), gold (Au), silver (…d2
›35.independentA method of manufacturing a laminated structure, comprising:nforming at least one thin film having a group represented by the following Chemical Formu…+8
›36.↳ 35The method of claim 35, wherein forming the at least one thin film includes forming a second thin film on a surface of the first thin film and the sur…d2+7
›37.↳ 36The method of claim 36, wherein performing the surface treatment includes exposing the first region of the second thin film to H2 plasma or ultraviole…d3+5
›38.↳ 37The method of claim 37, further comprising:nheterocyclizing a second region of the second thin film not subjected to the surface treatment after perfo…d4+4
›39.↳ 38The method of claim 38, wherein heterocyclizing the second region of the second thin film includes Huisgen 1,3-dipolar cycloaddition.d5
›41.↳ 38The method of claim 38, wherein a surface of the first region of the second thin film is exposed to H2 plasma using a mask and a surface of the second…d5
›42.↳ 38The method of claim 38, further comprising:nforming a metal layer on the heterocyclized second region, the metal layer including at least one metal se…d5
›43.↳ 38The method of claim 38, wherein a surface of the first region is exposed to ultraviolet (UV) light using a mask and a surface of the second region is …d5
›40.↳ 36The method of claim 36, further comprising:nforming the first thin film on a substrate, the substrate being formed of the same material as the first t…d3
Classifications
20 codesIPC · International Patent Classification
Section H — Electricity
- H01L29/72
USPC · US Patent Classification
257/40257/83526/256257/86257/192436/518428/411.1257/94428/457428/209427/331257/411428/426427/553438/99428/195.1428/702548/255548/110
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Pendency
3.0 y
1,096 days filing → grant
Office actions
1
non-final + final
Responses
1
1 RCE
Examiner
Edward Wojciechowicz
art unit 2895 · TC 2800
Law firm
Citations: 18 back · 0 forward
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1 priority documents›Priority documents — 1
| Type | Document | Date |
|---|---|---|
| related publication | US 20100200842 A1 | 12 Aug 2010 |
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