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Inventor

Masayuki Ichige

Inventor
Yokohama, JP

Overview

48→
Patents
2003–2015
Patent span
Electricity
Primary field (CPC H)

Patents· 48 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary
H10BElectronic memory devices43%
H10DInorganic electric semiconductor devices28%
G11CStatic stores23%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h102%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
H01LSemiconductor devices1%
H10NElectric solid-state devices not otherwise provided for1%
PatentTitleYear
9,165,643'Nonvolatile semiconductor memory device'20159,076,723'Non-volatile memory device and method for manufacturing same'20158,908,410'Nonvolatile semiconductor memory device'20148,742,529'Semiconductor memory'20148,637,915'Nonvolatile semiconductor memory'20148,541,829'Nonvolatile semiconductor memory and fabrication method for the same'20138,324,679'Nonvolatile semiconductor memory'20128,294,221'Semiconductor memory device'20128,093,662'Semiconductor memory'20128,084,324'Nonvolatile semiconductor memory and fabrication method for the same'20117,982,259'Nonvolatile semiconductor memory'20117,919,823'EEPROM array with well contacts'20117,888,730'Nonvolatile semiconductor memory'20117,847,363'Semiconductor memory'20107,705,394'Nonvolatile semicondutor memory with metallic silicide film electrically connected to a control gate electrode layer'20107,692,252'EEPROM array with well contacts'20107,649,777'Nonvolatile semiconductor memory cell matrix with divided write/erase, a method for operating the same, monolithic integrated circuits and systems'20107,563,664'Semiconductor memory device equipped with memory transistor and peripheral transistor and method of manufacturing the same'20097,528,046'Method for manufacturing semiconductor device'20097,528,452'Semiconductor memory'20097,504,294'Method of manufacturing an electrically erasable programmable read-only memory (EEPROM)'20097,501,678'Nonvolatile semiconductor memory device'20097,498,630'Nonvolatile semiconductor memory'20097,442,985'Semiconductor memory device having memory cell section and peripheral circuit section and method of manufacturing the same'20087,417,281'Semiconductor device with a selection gate and a peripheral gate'20087,411,826'Semiconductor integrated circuit device'20087,382,653'Electrically rewritable non-volatile semiconductor memory device'20087,371,654'Manufacturing method of semiconductor device with filling insulating film into trench'20087,365,018'Fabrication of semiconductor device for flash memory with increased select gate width'20087,361,951'Flash memory having memory section and peripheral circuit section'20087,151,686'Semiconductor memory device and electric device with the same'20067,141,474'Fabrication method of a nonvolatile semiconductor memory'20067,082,055'Semiconductor integrated circuit device'20067,067,872'Semiconductor memory device equipped with memory transistor and peripheral transistor and method of manufacturing the same'20067,045,423'Non-volatile semiconductor memory device with multi-layer gate structure'20066,995,425'Semiconductor memory device having memory cell section and peripheral circuit section and method of manufacturing the same'20066,977,409'Flash memory having memory section and peripheral circuit section'20056,925,008'Non-volatile semiconductor memory device with a memory unit including not more than two memory cell transistors'20056,921,960'Capacitor element with an opening portion formed in a peripheral circuit'20056,894,341'Semiconductor device and manufacturing method'20056,878,985'Nonvolatile semiconductor memory device having a memory cell that includes a floating gate electrode and control gate electrode'20056,853,029'Non-volatile semiconductor memory device with multi-layer gate structure'20056,845,042'Nonvolatile semiconductor memory, fabrication method for the same, semiconductor integrated circuits and systems'20056,798,038'Manufacturing method of semiconductor device with filling insulating film into trench'20046,784,041'Semiconductor device and method of manufacturing the same'20046,720,612'Semiconductor device'20046,667,507'Flash memory having memory section and peripheral circuit section'20036,590,255'Semiconductor memory device having memory cell section and peripheral circuit section and method of manufacturing the same'2003

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2003–2015Patents assigned to TOSHIBA KK (45)· patent assignee history
2003–2015Based in Yokohama, JP· patent location history
2004–2012Based in Kanagawa, JP· patent location history
2005Based in Tokyo, JP· patent location history
2008–2015Based in Yokkaichi, JP· patent location history
2011–2014Patents assigned to ICHIGE MASAYUKI (7)· patent assignee history
2011–2014Patents assigned to ARAI FUMITAKA (4)· patent assignee history
2011–2014Patents assigned to SUGIMAE KIKUKO (4)· patent assignee history
2012–2014Patents assigned to HASHIMOTO KOJI (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK452003–2015
ICHIGE MASAYUKIself72011–2014
ARAI FUMITAKA42011–2014
SUGIMAE KIKUKO42011–2014
HASHIMOTO KOJI22012–2014
Locations
LocationPatentsSpan
Yokohama, JP362003–2015
Yokkaichi, JP72008–2015
Kanagawa, JP42004–2012
Tokyo, JP12005