Inventor
Young-Hee Kim
Inventor
Mohegan Lake, NY, US
Overview
Patents· 89 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices13%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
H01LSemiconductor devices7%
G11CStatic stores6%
Y02PClimate change mitigation technologies in the production or processing of goods4%
G06TImage data processing or generation, in general3%
H04NPictorial communication, e.g. television3%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation3%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution3%
H10BElectronic memory devices2%
PatentTitleYear
11,123,016Portable bio information measuring device202111,113,563Apparatus for detecting object and method thereof202111,103,195Method for providing eating habit information and wearable device therefor202111,106,214Artificial neural network-based projection information recognition apparatus and method thereof202110,685,454Apparatus and method for generating synthetic training data for motion recognition20209,809,634'Composition comprising branched multipeptide vaccine and vaccine comprising the same'20179,771,745'Closed force transmission device and safety door lock using same'20179,722,031'Reduced current leakage semiconductor device'20179,711,417'Fin field effect transistor including a strained epitaxial semiconductor shell'20179,711,416'Fin field effect transistor including a strained epitaxial semiconductor shell'20179,679,775'Selective dopant junction for a group III-V semiconductor device'20179,627,482'Reduced current leakage semiconductor device'20179,489,740'Camera tracking apparatus and method using reconstruction segments and volumetric surface'20169,447,854'Force transfer mechanism'20169,430,865'Real-time dynamic non-planar projection apparatus and method'20169,418,846'Selective dopant junction for a group III-V semiconductor device'20169,406,382'Single poly EEPROM device'20169,397,161'Reduced current leakage semiconductor device'20169,391,171'Fin field effect transistor including a strained epitaxial semiconductor shell'20169,287,136'FinFET field-effect transistors with atomic layer doping'20169,076,250'Apparatus for 3D reconstruction based on multiple GPUS and method thereof'20159,054,192'Integration of Ge-containing fins and compound semiconductor fins'20159,048,261'Fabrication of field-effect transistors with atomic layer doping'20159,034,748'Process variability tolerant hard mask for replacement metal gate finFET devices'20158,962,374'Integration of a titania layer in an anti-reflective coating'20158,946,844'Integration of a titania layer in an anti-reflective coating'20158,916,272'Surface protective film, method for fabricating the same, pouch thereof and method for fabricating the same'20148,912,032'Temperature control device for optoelectronic devices'20148,872,817'Real-time three-dimensional real environment reconstruction apparatus and method'20148,861,728'Integrated circuit tamper detection and response'20148,759,139'Buried selective emitter formation for photovoltaic devices utilizing metal nanoparticle catalyzed etching'20148,748,252'Replacement metal gate transistors using bi-layer hardmask'20148,683,944'Indoor artificial breeding method of termite'20148,663,801'Organic-inorganic nanocomposite and polymer resin comprising the same'20148,642,458'Method of fabricating nonvolatile memory device'20148,580,635'Method of replacing silicon with metal in integrated circuit chip fabrication'20138,569,844'Metal gate CMOS with at least a single gate metal and dual gate dielectrics'20138,445,316'Non-lithographic method of patterning contacts for a photovoltaic device'20138,383,483'High performance CMOS circuits, and methods for fabricating same'20138,335,676'Method for calculating force acting on interface between immiscible fluids in fluid simulation'20128,269,771'Remeshing method and apparatus for restoring sharp features of mesh made smooth enough'20128,178,382'Suspended germanium photodetector for silicon waveguide'20128,097,500'Method and apparatus for fabricating a high-performance band-edge complementary metal-oxide-semiconductor device'20128,035,173'CMOS transistors with differential oxygen content high-K dielectrics'20118,026,329'Polycarbosilane and method of producing the same'20117,999,323'Using metal/metal nitride bilayers as gate electrodes in self-aligned aggressively scaled CMOS devices'20117,934,598'Protective film-integrated pouch for display panel'20117,931,949'Biodegradable starch bowl and method for preparing the same'20117,902,620'Suspended germanium photodetector for silicon waveguide'20117,833,849'Method of fabricating a semiconductor structure including one device region having a metal gate electrode located atop a thinned polygate electrode'20107,749,847'CMOS integration scheme employing a silicide electrode and a silicide-germanide alloy electrode'20107,709,902'Metal gate CMOS with at least a single gate metal and dual gate dielectrics'20107,696,036'CMOS transistors with differential oxygen content high-k dielectrics'20107,666,732'Method of fabricating a metal gate CMOS with at least a single gate metal and dual gate dielectrics'20107,598,545'Using metal/metal nitride bilayers as gate electrodes in self-aligned aggressively scaled CMOS devices'20097,476,622'Method of forming a contact in a semiconductor device'20097,432,567'Metal gate CMOS with at least a single gate metal and dual gate dielectrics'20087,215,355'Image control apparatus and method for mobile communication terminal'20077,202,376'Method of producing polycarbosilane using zeolite as catalyst'20077,196,774'Lithography device'20077,131,217'Apparatus and method for drying semiconductor wafers using IPA vapor drying method'20067,008,450'Porous hydroxy apatite containing silicon and magnesium, and a preparation method thereof'2006RE038537'Self-diagnosis arrangement for a video display and method of implementing the same'20046,660,479'Process for preparing peptide nucleic acid probe using polymeric photoacid generator'20036,649,131'Preparation of highly pure copper oxide from waste etchant'20036,649,471'Method of planarizing non-volatile memory device'20036,541,377'Method and apparatus for preparing polysilicon granules'20036,501,299'Current mirror type bandgap reference voltage generator'20026,436,419'Antimicrobial treatment of polymers'20026,396,322'Delay locked loop of a DDR SDRAM'20026,389,563'Semiconductor memory test circuit and method for the same'20026,359,125'Process for preparing peptide nucleic acid probe using polymeric photoacid generator'20026,356,501'Apparatus for generating high voltage signal'20026,323,720'Internal voltage generator using anti-fuse'20016,295,233'Current controlled open-drain output driver'20016,255,895'Circuit for generating a reference voltage trimmed by an anti-fuse programming'20016,184,720'Internal voltage generating circuit of a semiconductor device using test pad and a method thereof'20016,169,694'Circuit and method for fully on-chip wafer level burn-in test'20016,150,868'Anti-fuse programming circuit'20006,144,247'Anti-fuse programming circuit using variable voltage generator'20006,133,778'Anti-fuse programming circuit with cross-coupled feedback loop'20006,121,507'Method for treating wastewater containing hazardous matter using electron beam irradiation'20006,108,261'Repair circuit for redundancy circuit with anti-fuse'20005,963,249'Self-diagnostic circuit for a video display and method of implementing the same'19995,686,800'Image-correction circuit and method for picture tube'19975,670,972'Self-diagnosis arrangement for a video display and method of implementing the same'19975,403,626'Process for preparing hydrophilic polymer films and apparatus thereof'19955,275,663'Process for preparing hydrophilic polymer film and apparatus thereof'19945,159,574'Address transition detection circuit'1992Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1992–2002Patents assigned to HYUNDAI ELECTRONICS IND (12)· patent assignee history
1994–2007Based in Kyungki-do, KR· patent location history
1997–2021Patents assigned to SAMSUNG ELECTRONICS CO LTD (13)· patent assignee history
1997–2021Based in Suwon-si, KR· patent location history
2003–2020Based in Daejeon, KR· patent location history
2008–2017Patents assigned to IBM (33)· patent assignee history
2008–2014Based in Yorktown Heights, NY, US· patent location history
2010–2017Based in Mohegan Lake, NY, US· patent location history
2012–2016Patents assigned to KIM YOUNG-HEE (13)· patent assignee history
2012–2017Patents assigned to KIM YOUNG HEE (5)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 33 | 2008–2017 |
| KIM YOUNG-HEEself | 13 | 2012–2016 |
| SAMSUNG ELECTRONICS CO LTD | 13 | 1997–2021 |
| HYUNDAI ELECTRONICS IND | 12 | 1992–2002 |
| KIM YOUNG HEEself | 5 | 2012–2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Mohegan Lake, New York, US | 25 | 2010–2017 |
| Daejeon, KR | 9 | 2003–2020 |
| Yorktown Heights, New York, US | 9 | 2008–2014 |
| Kyungki-do, KR | 9 | 1994–2007 |
| Suwon-si, KR | 7 | 1997–2021 |